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1.
Measurements of the upper critical field, Hc2(T), in single crystal Nb3Sn were extended to 30 tesla (300 kG) with dc fields produced by a Hybrid magnet. Observations of Hc2(T) were made for materials which remain in the cubic (c) phase and those which show a martensitic transformation at the tetragonal (t) phase. Hc2(T) measurements of Nb3Sn for a pure crystal for which the de Haasvan Alphen (DHVA) effect was observed and for polycrystalline (t) phase and (c) phase materials are also reported. Measured values of Hc2(4.2 K) and calculated values of Hc2(0) are: 1) along the [100] direction for our earlier Nb3Sn, Hc2(4.2 K) = 26 T for the (c) phase and 21.5 T for the (t) phase; Hc2(0) = 29T for the (c) phase and 24 T for the (t) phase; 2) along the [100] direction for the DHVA material Hc2(4.2 K) = 18 T and Hc2(0) = 20 T; 3) for polycrystalline Nb3Sn (t) phase material Hc2(4.2 K) = 23 T and Hc2(0) = 25 T and for (c) phase material Hc2(4.2 K) = 26 T and Hc2(0) = 29 T. The values of (dHc2/dT)T=Tc vary from 2.4T/K for the highest Hc2(T) material to 1.6T/K for the DHVA material. The anisotropy for various Nb3Sn single crystal materials is small and independent of temperature from Tc to 0.1 Tc. δTc between the (c) and (t) phase is <0.3 K. Within experimental error excellent fits of Hc2(T) with theory are obtained assuming a dirty or clean Type II superconductor with no Pauli paramagnetic limiting. Experimental details and strong-coupling effects are discussed. When strong-coupling is included, the effects of any paramagnetic limiting would be small and not detectable within our present experimental error. Brief comments also are made concerning Hc2 of V3Si.  相似文献   

2.
The upper critical fields, HC2, of several NbxGa1-x alloys with values of Tc from 13.3 K to 20.2 K have been measured at temperatures from 4.2 to 20.4 K with dc and pulsed magnet fields. For the highest Tc material, HC2(4.2 K) = 340 kG. The data are consistent with almost complete suppression of Pauli paramagnetic limiting. Comparisons with other high Tc materials, Nb3Al and NbAlGe are presented.  相似文献   

3.
A significant monotonous decrease of Hc2(0) almost proportional to Tc has been observed after heavy ion irradiation of the A15 superconductor Nb3Sn at low temperature < 30 K and isochronal annealing up to 300 K has been measured. The effects are discussed in connection with the Goodman—Gorkov-relation.  相似文献   

4.
The electrical resistance of a linear chain metal Nb3Te4 were measured from 1.3 to 320 K. The residual resistance ratio R(300 K)R(4.2 K) is about 3. Nb3Te4 shows an anomaly in the resistivity vs temperature at about 80 K, suggesting an occurrence of a charge-density-wave transition. The transverse and longitudinal magnetoresistance at 4.2 K are proportional to the magnetic field in the range of 2–58 kOe. In the superconducting region close to the transition temperature Tc, the critical magnetic field Hc2 is proportional to δT=Tc?T. The angular dependence of Hc2 fits well with the fluxoid model of the Ginzburg-Landau theory. The ratio of the critical fields parallel and perpendicular to the chain direction is 4.8.  相似文献   

5.
The superconducting properties of A 15- and σ-phases of the system Nb−Pt were investigated. Alloys of compositions Nb3Pt, Nb2Pt, and Nb62Pt38 were prepared by arc melting and subjected to optical microscopic and x-ray analysis for structure determination. The transition temperatures were measured inductively as well as resistively. The temperature dependences of critical fields were measured up to 35 kG. The A 15-phase has aT c value of 8.97K and a zero temperature upper critical fieldH c2(0) of 100 kG as compared to aT c value of 2.14K and anH c2(0) value of 14kG for the σ-phase. A comparison with theoretical upper critical field values seems to indicate that a spin-orbit coupling mechanism is responsible for the higher value ofH c2(0) in the case of the A 15-phase alloy. The temperature dependent resistance up to 300 K is also measured and discussed for both the phases.  相似文献   

6.
The critical supercooling field H sc is measured in aluminum single crystals and twinned bicrystals in a temperature range slightly below T c0 (T c0 ? 0.055 K < T < T c0), where T c0 is the critical superconducting transition temperature. It is found that, even in this small temperature range, the H sc(H c) dependence, which is considered to be identical to the H c3(H c) dependence for single crystals, is substantially nonlinear. The H sc(H c) dependences of the twinned bicrystals and single crystals are shown to be significantly different. The qualitative features of the phase diagram of the twinned aluminum bicrystals coincide with those of the phase diagram of twinning-plane superconductivity obtained earlier for tin in [1]. These findings allow the conclusion that the phenomenon of twinning-plane superconductivity also exists in face-centered cubic crystal lattices.  相似文献   

7.
A study of the influence of the hydrogen concentration cH on the superconducting transition temperature Tc and the d.c.-conductivity σ of Al-films has been performed. The samples were prepared by co-deposition of Al and H (H2) onto a sapphire substrate held at a temperature of about 5 K. Within the experimental errors, there is no difference between the behaviour of Al-H and Al-H2 respectively. σ shows a decrease with increasing cH and a metal-insulator transition at cH?0.68. The Tc values exhibit a maximum Tc ? 5.3 K for 0.22 ? cH ? 0.5. Annealing experiments result in a decrease of Tc and an increase of σ. An analysis of the annealing experiments leads us to the conclusion that the as-prepared Al-H (Al-H2) films have an amorphous structure, which transforms during annealing in a granular system of Al grains embedded in insulating AlH3. No H-specific effect has been detected.  相似文献   

8.
The superconducting transition temperature (Tc) of amorphous Nb3Ge was studied under both hydrostatic and quasihydrostatic pressure to 3.5 and 13 GPa, respectively. Whereas hydrostatic pressure causes Tc to initially decrease, Tc is found to increase under higher quasihydrostatic pressures. Tc(p) was also studied on an A-15 crystalline Nb3Ge sample obtained from the amorphous sample by annealing.  相似文献   

9.
We have studied the d.c.-conductivity σ and the superconducting transition temperature Tc in frozen mixtures of Sn and molecular H2 (Sn-H2) or atomic H(Sn-H). The samples were prepared by co-deposition of Sn and H2 (H) onto a sapphire substrate held at a temperature of about 5 K. Both systems show a quite different behaviour. While the Sn-H2 system exhibits a metal-insulator transition at cH2 = 0.6 which agrees well with percolation theory, the Sn-H samples show a metal-semiconductor transition already at cH?0.32. Both systems have an increased Tc in the metallic region. H2 seems to be mobile in Sn-H2 films even down to 5 K after annealing of the samples at 10 K. Atomic H, on the other hand, is bound up to T?200 K.  相似文献   

10.
The temperature dependence of the superconducting critical current density Jc(T) in zero applied field from 4.2 K to Tc has been measured for 15 films of Nb-Ge with varying composition, deposition conditions, and radiation damage. The results show (i) the enhanced superconductivity observed in stoichiometric Nb3Ge as well as nonstoichiometric films is “bulk like” rather than filamentary, (ii) a simple correlation of the form Jc(0)∝eTcT0 which is reasonably independent of how the Tc has been achieved, and (iii) some additional evidence that the enhanced Tc of the films is not due to their chemical composition alone.  相似文献   

11.
We report on syntheses and electron transport properties of polycrystalline samples of diborides (AB2) with different transition metals atoms (A=Zr, Nb, Ta). The temperature dependence of resistivity, ρ(T), and ac susceptibility of these samples reveal a superconducting transition of ZrB2 with T c =5.5 K, while NbB2 and TaB2 have been observed to be nonsuperconducting up to 0.37K. H c2(T) is linear in temperature below T c , leading to a rather low H c2(0)=0.1 T. At T close to T c , H c2(T) demonstrates a downward curvature. We conclude that these diborides, as well as MgB2 samples, behave like simple metals in the normal state with usual Bloch-Grüneisen temperature dependence of resistivity and with Debye temperatures 280, 460, and 440 K for ZrB2, NbB2, and MgB2, respectively, rather than T 2 and T 3, as previously reported for MgB2.  相似文献   

12.
The unit cell parameters a and c of nonirradiated [N(C2H5)4]2ZnBr4 crystals in the temperature region 90–300 K and of samples irradiated with γ rays to doses of 106 and 5 × 106 R in the 270-to 300-K interval were measured using x-ray diffraction. The data obtained were used to derive the thermal expansion coefficients αa and αc. It is shown that the parameter a increases and the parameter c decreases with increasing temperature. In the vicinity of the phase transition (PT) at T = 285 K, the temperature dependences of a(T) and c(T) reveal anomalies in the form of jumps and the αa(T) and αc(T) curves have a maximum and a minimum, respectively. The heat capacity of nonirradiated and irradiated [N(C2H5)4]2ZnBr4 samples was measured by adiabatic calorimetry. A maximum was found in the C p(T) curve at T = 285 K. Both x-ray diffraction and heat capacity measurements showed that the PT temperature decreased after γ irradiation.  相似文献   

13.
We investigated the influence of surface damage on the critical current density (Jc) of MgB2 thin films via 140-keV Co-ion irradiation. The Jc(H) of the surface-damaged MgB2 films was remarkably improved in comparison with that of pristine films. The strong enhancement of Jc(H) caused by a surface damage in MgB2 films can be ascribed to additional point defects along with an atomic lattice displacement introduced through low-energy Co-ion irradiation, which is consistent with the change in the pinning mechanism, from weak collective pinning to strong plastic pinning. The irreversible magnetic field (Hirr) at 5 K for surface-damaged MgB2 films with a thickness of 850 and 1300 nm was increased by a factor of approximately 2 compared with that of a pristine film. These results show that the surface damage produced by low energy ion irradiation can serve as an effective pinning source to improve Jc(H) in a MgB2 superconductor.  相似文献   

14.
The temperature dependences of the upper critical field B c2(T) and surface impedance Z(T) = R(T) + iX(T) have been measured in Ba1 ? x KxBiO3 single crystals with transition temperatures 6 ≤ T c ≤ 32 K (0.6 > x > 0.4). A transition from the BCS to an unusual type of superconductivity has been revealed: B c2(T) curves of the crystals with T c > 20 K have positive curvature (as in some HTSCs), and those of the crystals with T c < 15 K described by the usual Werthamer-Helfand-Hohenberg (WHH) formula. The R(T) and X(T) dependences of the crystals with T c ≈ 32 K and T c ≈ 11 K in the temperature range T ? T c are linear (as in HTSCs) and exponential (BCS), respectively. The experimental results are discussed using the extended saddle point model by Abrikosov.  相似文献   

15.
The superconducting transition temperature (Tc) has been measured before and after the introduction of hydrogen into Nb(1?x)Rux(0.20?x?0.33). In all cases, the presence of appreciable amounts of this interstitial component led to a sharp increase in the Tc. All the evidence suggests that conversion of the host metal lattice to f.c.c. is necessary for the appearance of the elevated Tc.  相似文献   

16.
To determine the reproductibility in the measurement of Tc a round-robin experiment was conducted. The samples consisted of five high Tc “Nb3Ge” thin films. The results of this experiment show that only the midpoint of the Tc curve is reproducible to within ≈±0.2 K.  相似文献   

17.
The upper critical field Hc2(T) and the specific heat jump ΔC(Tc) are calculated for Cs0.1WO2.9F0.1 using a two-band model. The model parameters are obtained by adjusting the theoretical Hc2(T) values to experimental results. The model calculation predicts an anomalous specific heat jump ΔC as a function of the inverse relation Tc(H).  相似文献   

18.
The specific heat of A-15 Nb3Al.83Ge.21 with a transition temperature, Tc, of 20.0 K has been measured from 6 to 25 K. Values of the parameters derived from the data are γ=35.0±2 mJ/mole-K2; the Debye temperature, θD=278±5 K; the energy gap, △, normalized as 2△/kTc, is 4.9±.3, and the thermodynamic critical field, Hc(0), is 4700±300 Gauss.  相似文献   

19.
Upper critical fields, Hc2(T), for superconducting LaMo6Se8, La0.8Eu0.2Mo6Se8, La0.8Ce0.2Mo6Se8 and PrMo6Se8 were measured. For the best material, LaMo6Se8, Tc = 11.3 K, (dHc2/dT)T=Tc=70 kG/K and and Hc2 (4.2 K) = 370 kG. These selenide compounds show promise as very high field superconductors.  相似文献   

20.
Low temperature irradiation of thin films of Nb75Ge25 (Tc = 3.2 K) and Nb80Si20 (Tc = 4.7 K) with 20 MeV sulfur ions leads to an increase of Tc of about 0.5 K and a decrease of ? of about 1.5 to 3.5%. Annealing up to room temperature partly restores the initial values. Qualitatively the results can be explained by irradiation induced smearing of the structure factor, which is partially recovered by annealing.  相似文献   

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