Sm富勒烯的价带光电子能谱

用紫外光电子能谱和同步辐射光电子能谱研究了Sm掺杂C₆₀薄膜的价带电子结构.Sm的价电子大部分转移给C₆₀，化学键以离子性为主.对于任何化学配比都没有观察到费米边，所以Sm富勒烯超导相在室温下为半导体性质.获得了很接近单相Sm_2.75C₆₀的样品在费米能级附近的电子态密度分布.固溶相的光电子发射与Sm_2.75C₆₀有明显区别.Sm_xC_{60关键词： 60}的Sm填隙化合物')" href="#">C₆₀的Sm填隙化合物 价带光电子能谱 电子结构     

Sm富勒烯的芯态光电子能谱

用X射线光电子能谱研究了Sm掺杂的固态C₆₀相衍变和芯电子态.在Sm_xC₆₀中Sm的含量x小于0.5时，样品是固溶相；在x=0.5和x=2.75之间的掺杂阶段，样品是这两个相的混合.在x=2.75和x=6之间的高掺杂阶段未观察到相分离的X射线光电子能谱证据.Sm 4f, 4d的实验数据表明Sm的价态是+2.二价Sm 3d_5/2芯态谱线存在两个子峰. 关键词： 60的Sm填隙化合物')" href="#">C₆₀的Sm填隙化合物 相结构 电子态 X射线光电子能谱     

Rb掺杂C60单晶的相衍变和电子态

在C60单晶超高真空解理面上制备C60的Rb填隙化合物薄膜.用同步辐射光电子能谱研究了相衍变过程.观察到对应于固溶相、Rb1C60和Rb3C60的电子态密度分布.当数纳米厚Rb3C60薄膜在C60单晶(111)解理面形成后,室温条件下进一步沉积Rb至样品表面不产生fcc到bct或bcc结构相变.C60分子的大尺寸提供了表面填隙位置使得样品表面形成Rb4C60和Rb5C60吸附相.价带电子能谱结果表明这两种表面相为金属性.Rb 3d芯态电子能谱测量进一步证实了表面Rb4C60和Rb5C60吸附相的存在.     

Yb掺杂C60薄膜的x射线光电子能谱研究

在超高真空系统中制备了C₆₀的Yb填隙化合物薄膜.用x射线光电子能谱研究了Yb和C₆₀结合过程中C 1s，Yb 4f和Yb 4d的变化.利用Yb 4f和C 1s的谱峰强度确定出相纯样品的化学组分接近Yb_2.75C₆₀，这一结果与晶体x射线衍射结果一致.Yb 4f和Yb 4d的峰形与峰位表明化合物中Yb的价态为Yb²⁺.相纯样品（Yb_2.75C₆₀）的C 关键词： 60的Yb填隙化合物薄膜')" href="#">C₆₀的Yb填隙化合物薄膜 x射线光电子能谱 Yb价态     

K3C60在200K附近的取向相变机理

研究了K₃C₆₀单晶薄膜在200K附近的导带结构.样品温度为190K时,同步辐射角分辨光电子谱能够观察到[111]方向有规律的能带色散.而在220K附近色散不存在.这一实验结果与K₃C₆₀在200K存在取向相变相符合.用反铁磁Ising模型对实验结果进行了分析.结果表明,K₃C₆₀在200K的相变是由低温下的一维无序取向结构转变为200K以上的双取向结构畴与无序分子(约占40 关键词： 3C₆₀')" href="#">K₃C₆₀ 取向相变机理     

Yb2.75C60价带光电子能谱

用角积分紫外光电子能谱技术测量了Yb_2.75C₆₀薄膜的价带电子态密度分布.相纯Yb_2.75C₆₀样品通过C1s芯态x射线电子谱峰的位移表征.结果表明Yb_2.75C₆₀是半导体，在费米能级处几乎没有电子态分布.Yb 6s电子态和C₆₀LUMO能带的杂化效应不可忽略，有部分Yb 6s电子分布在Yb-C₆₀杂化能带上. 关键词： 2.75C₆₀')" href="#">Yb_2.75C₆₀ 电子能谱 电子态密度     

C60-聚甲基丙烯酸甲脂复合膜的结构、光学和电荷转移特性

描述了通过溶胶-凝胶法制备的C₆₀-PMMA复合膜的结构、紫外-可见吸收特性、R aman 散射特性和红外吸收特性.通过对C₆₀紫外-可见吸收光谱，Raman散射谱和红外 吸收谱的实验和理论分析，研究了C₆₀与PMMA之间的电荷转移. 关键词： 溶胶-凝胶法 60-PMMA复合膜')" href="#">C₆₀-PMMA复合膜 电荷转移     

基于富勒烯C60结构体系的金纳米粒子合成物光学非线性研究

使用532nm,8ns激光脉冲研究了两种新型的基于富勒烯C₆₀结构体系的金纳米粒子合成物的光学非线性.Z-scan实验结果和理论分析的比较表明,材料的非线性吸收强烈地依赖于材料中的配合体,而非线性折射主要来自金纳米粒子的贡献.而且与熟知的C₆₀甲苯溶液光限幅特性作了比较,分析了光限幅机理. 关键词： 60结构体系')" href="#">基于富勒烯C₆₀结构体系 金纳米粒子 等离子体 光限幅     

C60分子在Si（111）-7×7表面分子束外延生长的STM研究

在超高真空中采用分子束外延(molecular beam epitaxial)技术进行C₆₀分子在硅（111）-7×7表面的生长,并利用扫描隧道显微镜进行原位研究.室温下,相对于无层错半胞（unfaulted half unit cell）,C₆₀更易于吸附在有层错半胞（faulted half unit cell）.表面台阶处的电子悬挂键密度最高,通过控制温度和时间进行退火处理后,C₆₀分子会向着台阶的方向扩散并聚集.测量分子在不同吸附位 关键词： 60分子')" href="#">C₆₀分子 分子束外延 Si(111)-7×7 超高真空扫描隧道显微镜     

H2对Ar稀释SiH4等离子体CVD制备多晶硅薄膜的影响

以SiH₄，Ar和H₂为反应气体，采用射频等离子体化学气相沉积方法在300℃下制备了低温多晶Si薄膜.实验发现，反应气体中H₂的比例是影响薄膜结晶质量的重要因素，在适量的H₂比例下制备的多晶Si薄膜具有结晶相体积分数高，氢含量低，生长速率快、抗杂质污染等特性. 关键词： 低温多晶Si薄膜 等离子体CVD 4')" href="#">Ar稀释SiH₄ 2比例')" href="#">H₂比例     

Electron attenuation lengths in fullerene and fullerides

Using X-ray photoemission measurements, we have determined the attenuation length of C 1s photoelectrons in C₆₀ film to be 21.5 Å with the incident photon energy of Mg Kα radiation. The inelastic mean free path calculated with the TPP-2M algorithm coincides fairly well with the experimentally determined attenuation length, indicating the validity of the algorithm to fullerene and fullerides. The inelastic mean free paths for some fullerides, i.e. K₃C₆₀, K₆C₆₀, Ba₄C₆₀, Sm_2.75C₆₀ and Sm₆C₆₀ are calculated to help the quantitative analyses of the photoemission spectra for these compounds.     

Comparative study of optical parameters of fullerene C60 film at different temperatures

Fullerene C₆₀ thin films on glass substrate (around 2000 ? thickness) were prepared by thermal evaporation technique. The structural, surface morphology and optical properties of the films were studied. The optical properties of fullerene C₆₀ were investigated in the spectral range 200 nm to 900 nm using a UV-Vis spectrophotometer at room temperature as well as at liquid nitrogen temperature (77 K). The optical band gap at room temperature is found to be 2.30 eV, which gradually decreases with lowering the temperature and reaches to 2.27 at 77 K. The thickness and refractive index of fullerene C₆₀ film were calculated by ellipsometry. From the X-ray analysis, we have calculated the grain size, dislocation density, number of crystallite per unit area, and strain of the film at room temperature. The surface morphology of film was analyzed by scanning electron microscope (SEM). The present result show that the fullerene C₆₀ film becomes more conducting at low temperature.     

Structure determination of Cs0.864Rb1.136SeO4

The present structure determination of Cs _x Rb_2-x SeO₄ shows that the crystal belongs to the β - K₂SO₄ family, like the related compounds Cs₂SeO₄ and Rb₂SeO₄. In β - K₂SO₄ compounds the cations occupy two different sites; one of these sites, which is surrounded by 11 anionic atoms, is occupied preferentially by Cs, while the other one with 9 neighbours by Rb. A slight excess of Rb has been determined by X-ray structure analysis in a single crystal prepared at 292 K; its formula is Cs_0.864(9)Rb_1.136(9)SeO₄.

Crystals were grown by evaporation from equimolar water solutions of Cs₂SeO₄ and Rb₂SeO₄ at 292 and 301 K. No phase transition was detected by DSC in the range 103-323 K for either of the samples. Lattice parameters of different crystals isolated at various stages of crystallization indicate formation of crystals with a different proportion of Cs/Rb cations. The lattice parameters as well as their ratios differed significantly from those given by Endo et al., (1983).     

Low temperature transport study of C60 thin film FETs

Low temperature transport in C₆₀ thin film field-effect transistors has been studied using several samples with various gate voltages. Nearest neighbor hopping and variable range hopping transport have been observed in the low temperature transport measurements. Analyzing the temperature dependence of the transport types, it was found that the electrical properties of the film can be improved by thermally agitated evaporation of C₆₀.     

A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes

C₆₀ field-effect transistor (OFET) with a mobility as high as 5.17 cm²/V·s is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-(methyl methacrylate) (PMMA) insulator and a bathophenanthroline (Bphen)/Ag bilayer electrode are prepared. The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode. By analysing the C₆₀ film with atomic force microscopy and X-ray diffraction techniques, it is shown that the pentacene passivation layer can contribute to C₆₀ film growth with the large grain size and significantly improve crystallinity. Moreover, the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C₆₀ film efficiently.     

Metallic Rb4C60 and Rb5C60 on the top layer of C60 single crystal

Photoemission studies reveal the existences of metallic Rb₄C₆₀ and Rb₅C₆₀ surface phases on the top layer of C₆₀ single crystal. After Rb₃C₆₀ thin film with thickness of nanometers has formed on the (1 1 1) surface layers of the C₆₀ single crystal, the excess deposition of Rb atoms do not induce the bulk-like face-centered cubic to body-centered tetragonal or body-centered cubic structure transitions at room temperature. The large size of C₆₀ molecule offers the surface vacancies for the formation of Rb₄C₆₀ and Rb₅C₆₀ monolayer that is further verified by Rb 3d core-level photoemission measurements. Valence band photoemission results exhibit the surface phases are metallic.