金属离子在多孔硅表面和吸附与电镀过程中金属在多孔硅表面的淀积

刚制备的多孔硅与金属盐溶液接触会产生金属离子在多孔硅表面和吸附现象。实验显示这一现象只发生在新鲜的多孔硅表面, 而存放一月以后的样品不具备此性质。文中把这一现象归因于新鲜的多孔硅表面电子的富集, 溶液中金属离子从多孔硅表面获得电子而附着。多孔硅表面电镀金属过程中, 一定电压下电镀电流密度在起始阶段逐渐下降, 可以用一个指数关系式较好地描述, 在本文中有一个唯象模型予以解释。     

巯基硅球石墨烯复合材料的合成与重金属离子吸附

采用一锅法和水热法分别合成了单分散巯基修饰氧化硅球(MFS)及其石墨烯超轻复合材料(MFSGA)。利用X射线衍射、扫描电镜、红外光谱等方法对MFS和MFSGA的材料结构和形貌进行表征。MFSGA表现出良好的结构强度,MFS在复合材料中均匀分散。考察了材料粒径、修饰剂种类等因素对MFS形貌和表面结构的影响。采用X射线荧光法测试了MFS和MFSGA对Hg²⁺等重金属离子的吸附特性,二者对Hg²⁺的饱和吸附量分别为260.19和158.06 mg/g。MFS易于合成且应用经济性良好,MFSGA的结构稳定性好,易于回收与重复利用,具有较大的应用潜力。     

在多孔有机聚合物中构筑广谱性重金属离子吸附活性位

以三维刚性结构的三蝶烯为单体, 通过简单的Friedel-Crafts烷基化反应制备得到高比表面积的三蝶烯基多孔有机聚合物(TPOP), 在TPOP中接枝乙二胺和氯乙酸钠, 构建了广谱重金属离子吸附剂(TPOP-CH₂EDTA). 获得的TPOP-CH₂EDTA具有微孔/介孔结构, 其微孔尺寸为1.6 nm, BET比表面积为634 m²/g, 利于重金属离子传递和配位作用的强化. TPOP-CH₂EDTA对重金属离子具有吸附广谱性, 其对Ag(Ⅰ), Cu(Ⅱ), Ni(Ⅱ), Zn(Ⅱ), Co(Ⅱ), Sn(Ⅳ), Pb(Ⅱ), Cd(Ⅱ), Fe(Ⅲ)和Cr(Ⅲ)等10种重金属离子的去除率均高于98%. 以Pb(Ⅱ)为典型的重金属污染物, 通过Langmuir模型计算得到Pb(Ⅱ)的最大吸附容量高达184.5 mg/g; 具有拟二级吸附动力学特征, 吸附速率快, 动力学常数k₂为0.0173 g·mg^?1·min^?1; 经过5次循环使用后, Pb(Ⅱ)的去除效率仍高达95.8%. TPOP-CH₂EDTA对混合溶液中Pb(Ⅱ)和Cu(Ⅱ)的去除率均高于99%, 且对含有大量无机盐[如Ca(Ⅱ), Mg(Ⅱ), K(Ⅰ)和Na(Ⅰ)离子]和有机化合物的复杂真实水体系, Pb(Ⅱ)和Cu(Ⅱ)的去除效率仍高于90%. 因此, 通过调控多孔有机聚合物微观结构(如比表面积、 孔径和吸附位点密度)而构筑的广谱性重金属吸附材料, 为协同去除复杂水系统中混合重金属离子提供了方案.     

多孔硅和掺镨多孔硅的光致发光

多孔硅在室温下发出光致荧光展现了硅用作光电子材料和显示技术材料的前景。掺入希土元素可以改善硅的发光性能。本文首次报道多孔硅掺希土的一种新的电化学掺杂方法——恒电位电解,和一种希土硝酸盐-支持电解质-有机溶剂的新电解体系。这一方法和体系的特点是通过采用适当外加电压来控制电解产物,提高掺入的希土浓度,提高发光强度;同时可避免析出使发光不稳定的产物,提高发光稳定性。优化了阳极氧化制备多孔硅的条件和阴极还原制备掺镨多孔硅的条件(镨化合物浓度、溶剂、离子强度、电解电压、时间),获得了光致发光强度高于多孔硅的掺镨多孔硅,并讨论了多孔硅和掺镨多孔硅的光致发光机制。     

硅沸石完美骨架上的吸附Ⅲ.氯氟烃在MFI和FAU上的吸附热

测定不同温度下三种氯氟烃F-11(CFCl3),F-12(CF2Cl2)和F-22(CHF2Cl)在疏水高硅MFI和FAU沸石上的吸附等温线,以研究其吸附热效应。根据Clapeyron-Clausius方程,由吸附等温线,计算不同覆盖度C的等量吸附热Qst(C)和平均吸附热Qst^*(△Ha)。上述吸附质在两种沸石上吸附热的大小顺序均为：△Ha(MFI)＞△Ha(FAU)。在同种沸石上,吸附热的大小顺序为：△Ha(F-11)＞△Ha(F-12)＞△Ha(F-22).298K时的吸附等温线和△Ha的变化趋势显示,对能允许氯氟烃分子自由进出其孔道的FAU沸石,吸附质分子越大,低分压吸附量(V)越大,吸附热(△Ha)也越大。而孔道对吸附质分子有空间限制作用的MFI沸石,其吸附热、分子尺寸与饱和吸附量(Vm)间关系比较复杂。选择去除氯氟烃的沸石吸附剂应综合考虑△Ha与饱和吸附容量Vm。     

疏水多孔硅制备及其对水中有机污染物的吸附

以硅酸钠为硅源,盐酸为催化剂,三甲基氯硅烷(TMCS)为表面改性剂,经溶胶-凝胶和表面改性过程制备出一种疏水性多孔硅材料.采用傅里叶变换红外(FTIR)光谱仪、接触角分析仪、氮气物理吸附仪和扫描电子显微镜(SEM)对其结构和性质进行表征.结果表明:所制备的多孔硅具有分等级孔道结构(中孔-大孔),比表面积为566m2·g-1,孔体积高达2.28cm3·g-1,多孔硅与水的接触角为156°,显示出超疏水特征.对甲苯、汽油、柴油和润滑油的吸附量均可高达自身质量的14倍,丰富的孔道使其在几分钟内即可达到饱和吸附.这种多孔硅在汽油/水混合体系中对汽油具有较高的选择性,同时具有良好的再生能力.经正己烷萃取再生后,多孔硅仍能基本保持初始吸附容量.此方法制备的多孔硅材料在吸附分离污水中的有机物和溢油处理方面具有很好的应用前景.     

硅沸石完美骨架上的吸附Ⅲ.氯氟烃在MFI和FAU上的吸附热

测定不同温度下三种氯氟烃F-11(CFCl3),F-12(CF2Cl2)和F-22(CHF2Cl)在疏水高硅MFI和FAU沸石上的吸附等温线,以研究其吸附热效应。根据Clapeyron-Clausius方程,由吸附等温线,计算不同覆盖度C的等量吸附热Qst(C)和平均吸附热Qst^*(△Ha)。上述吸附质在两种沸石上吸附热的大小顺序均为：△Ha(MFI)＞△Ha(FAU)。在同种沸石上,吸附热的大小顺序为：△Ha(F-11)＞△Ha(F-12)＞△Ha(F-22).298K时的吸附等温线和△Ha的变化趋势显示,对能允许氯氟烃分子自由进出其孔道的FAU沸石,吸附质分子越大,低分压吸附量(V)越大,吸附热(△Ha)也越大。而孔道对吸附质分子有空间限制作用的MFI沸石,其吸附热、分子尺寸与饱和吸附量(Vm)间关系比较复杂。选择去除氯氟烃的沸石吸附剂应综合考虑△Ha与饱和吸附容量Vm。     

发光多孔硅表面的STM研究

自从Canham首次报道了室温下多孔硅的光致发光现象以来^[1],多孔硅已成为半导体光电化学及材料领域内最为热门的研究课题^[2].     

纳米金淀积的多孔硅靶增强样品的激光解吸/电离质谱信号

硅片类型和多孔硅结构的多样性影响了多孔硅表面的激光解吸/离子化质谱(DIOS)(无辅助基质的激光解吸/电离飞行时间质谱(LDI-TOF-MS))数据的重复性和靶的耐储时间。本工作通过在多孔硅的表面淀积金纳米颗粒并将其作为目标靶来增强软物质分子如聚乙二醇和多肽的激光解吸/电离质谱信号。纳米金的淀积钝化了多孔硅表面的Si-H活性基团,增加了靶的耐储时间。用场发射扫描电镜表征了多孔硅淀积金纳米颗粒前后的形貌,用X射线能量色散光谱法分析金的百分含量,结果表明其含量随沉积时间的延长而增加。激光解吸/电离质谱信号的增强可能是由多孔硅及其支持的金纳米颗粒的光学和物理性质引起的,该类型的样品靶在激光解吸/电离飞行时间质谱的应用上结合了多孔硅和金纳米颗粒的双重优势。     

硅(100)非重构表面上乙炔吸附反应的理论研究

采用量于力学AM1半经验分子理论轨道方法计算了在Si(100)非重构光滑附氢表面上乙炔化学吸附反应过程中的体系生成热,由此得到各步骤反应的活化焓和反应热数值.结果表明,乙炔分子容易在Si(100)表面上形成稳定的双位σ键吸附.     

Effect of drying on porous silicon

The phase transition of a fluid - in particular water - confined in the pores of silicon during drying is studied. The influence of this process on surface size and porosity is discussed. Methods of air drying, supercritical drying and freeze drying are considered. This revised version was published online in July 2006 with corrections to the Cover Date.     

Peculiarities of metal electrodeposition inside a flow-through porous electrode with low initial conductivity in oxidant containing solution

The earlier developed dynamic model of a flow-through electrode is used for studying how the variations in initial conductivity of a porous matrix κ_s,ini and a metal deposit affect the rate of metal deposition from an oxidant-containing solution for the direct-flow operation mode of the porous electrode. It is found that in contrast to an oxidant-free solution in which the decrease of κ_s,ini improves the uniformity of deposit distribution inside the porous cathode and increases the deposit final mass m _f, the opposite situation is observed in the presence of an oxidant, namely, a decrease in κ_s,ini, under otherwise similar conditions reduces the deposit mass and leads to its specific spatial distribution. The final metal deposit is divided into two separate fragments (rear and front) with a region of low conductivity of the initial porous matrix in between. Dynamics of the current and metal redistribution within the porous electrode, the reasons for the formation and stabilization of the rear fragment of coating, the correlation between the metal deposition rate and changes in the anodic zone position and intensity are discussed. It is shown that with the appearance of a specific profile of deposit distribution, the dependence of m _f on the metal conductivity develops a limit that differs considerably from the deposit final mass for an equipotential porous electrode.     

Growth of silicon thin film by LPE on porous silicon bilayers

The fabrication of solar cells based on the transfer of a thin silicon film on a foreign substrate is an attractive way to realise cheap and efficient photovoltaic devices. The aim of this work is to realise a thin mono-crystalline silicon film on a double porous silicon layer in order to detach and transfer it on mullite. The first step is the fabrication of a double porous silicon layer by electrochemical anodisation using two different current densities. The low current leads to a low porosity layer and during annealing, the recrystallisation of this layer allows epitaxial growth. The second current leads to a high porosity which permits the transfer on to a low cost substrate. Liquid Phase Epitaxy (LPE) performed with indium (or In+Ga) in the temperature range of 950–1050°C leads to almost homogeneous layers. Growth rate is about 0.35 μm min⁻¹. Crystallinity of the grown epilayer is similar on porous silicon and on single crystal silicon. In this paper, we focus on the realisation of porous silicon sacrificial layer and subsequent LPE growth. This revised version was published online in July 2006 with corrections to the Cover Date.     

Effect of concentration of ammonia and citrate ions on the kinetics of cathodic reactions during electrodeposition of a nickel-molybdenum alloy

The effect of the concentration of ammonia and citrate ions on the kinetics of cathodic processes in electrolytes intended for depositing electrolytic coatings of a nickel-molybdenum alloy is studied. Conditions conducive to obtaining coatings of satisfactory quality are formulated. The effect of ammonia and citrate ions on the Mo content in the alloy is analyzed. The experimental data are explained by assuming that the intermediate products of reduction of nickel and molybdate ions are adsorbed on the electrode surface.To the Centennial of B.N. Kabanov.Translated from Elektrokhimiya, Vol. 41, No. 1, 2005, pp. 83–90.Original Russian Text Copyright © 2005 by Kuznetsov, Pavlov, Chepeleva, Kudryavtsev.     

Effect of solution flow rate and direction on copper electrodeposition process from sulfuric acid electrolyte on porous electrode with high electric conductivity

The effect of solution flow direction and rate on the dynamics of copper electrodeposition onto a premetallized coal-graphite VINN-250 material from a dilute copper sulfate sulfuric acid solution is experimentally studied in the direct-flow mode. A light effect of solution supply on the copper deposit final mass for high and low solution flow rates is found, while the effect of this parameter on the metal distribution within the porous electrode is significant. The most uniform copper deposit distribution throughout the porous electrode is observed in the case of intermediate solution flow rates at its rear supply. The obtained experimental data agree qualitatively with the earlier published mathematical simulation results. Small systematic deviations from numeric calculations can be due to the process disregarded in the mathematical model: the effect of gas phase formed within the porous cathode due to the simultaneous hydrogen evolution.     

Nafion effect on the lead dioxide electrodeposition kinetics

Electrodeposition of lead dioxide in the presence of Nafion in solution is described by a four-stage kinetic scheme. The limiting stage at low polarizations is that of the second-electron transfer, and at high polarizations, the stage of delivery of lead compounds to the electrode surface. Nafion adsorption at the oxide profoundly affects the process kinetics.     

Mechanism of metals’ electrodeposition from complex electrolytes allowing for the anions’ adsorption: Effect of the position of ligands and complex ions in the compact layer on the reaction orders

Effect of the relative position in the compact layer of specifically adsorbed electroactive complex ion and complexing ligand on the magnitude of current is considered. Effect of parameters that characterize the adsorption of such ions and the electrical double layer structure on the dependence of current on the solution composition and effective reaction orders is analyzed.