抛光垫磨损非均匀性研究

抛光垫是化学机械抛光的重要组成部分,其磨损的非均匀性对被加工工件面型精度和抛光垫修整有重要影响。基于直线摆动式抛光方式,研究了抛光过程中抛光垫与工件的相对运动,建立了抛光垫磨损模型,分析了抛光工艺参数对抛光垫磨损及均匀性的影响。研究结果表明,工件与抛光垫的转速比为1.11,正弦偏心直线摆动形式,摆动幅度系数为2,摆动频率系数在0.1~0.2之间,抛光垫表面磨损更均匀,并根据抛光垫表面磨损特性优化了抛光垫形状。优化的抛光垫具有更好的面型保持性,延长了修整间隔,为抛光工艺设计提供理论指导。     

磁流变抛光材料去除的研究

磁流变抛光是近十年来的一种新兴的先进光学制造技术 ,它利用磁流变抛光液在梯度磁场中发生流变而形成的具有粘塑行为的柔性“小磨头”进行抛光。被抛光光学元件的材料去除是在抛光区内实现的。首先简要阐述了磁流变抛光的抛光机理 ,然后利用标准磁流变抛光液进行抛光实验。研究了磁流变抛光中几种主要工艺参数对抛光区的大小和形状以及材料去除率的影响情况。最后给出了磁流变抛光材料去除的规律。     

纳米级面形精度光学平面镜加工

为实现纳米级面形精度光学平面镜的高效精密抛光,提出了一种由传统环带抛光技术和先进离子束抛光技术相结合的组合式加工方法。介绍了环带抛光技术和离子束抛光技术的原理,通过实验研究了离子束抛光的材料去除函数,并采用这种组合抛光方法对口径为150 mm的平面镜进行抛光,抛光后平面镜的面形误差和表面粗糙度分别达到1.217 nm RMS和0.506 nm RMS。实验结果表明,这种组合抛光技术适合纳米级面形精度光学平面镜的加工。     

用环形拋光模抛光非球面

用维诺库尔分析过的环形抛光模改成一种非球面高速抛光模,对环形抛光模的数学模式作了进一步阐明,以探讨整个工件表面抛光的均匀性。叙述了环形抛光模的制造方法。讨论了磨削的非球面零件直接抛光的实验结果。     

集群磁流变抛光参数对亚表面损伤深度的影响

建立了亚表面损伤深度与抛光参数的关系模型,探究集群磁流变抛光后单晶蓝宝石亚表面损伤深度与集群磁流变抛光参数的关系,研究了抛光参数对亚表面损伤深度的影响规律,运用正交实验验证了模型的合理性.实验中使用白光干涉仪作为测量工具,α-Al_2O_3抛光液作为抛光液,每个实验因素选择三个水平,结果表明:集群磁流变抛光中,单晶蓝宝石亚表面损伤深度与磨粒粒径和抛光压力有关,亚表面损伤深度随着抛光压力和磨粒粒径的增大而增大,抛光压力对亚表面损伤深度的影响远大于磨粒粒径.当抛光压力和磨粒粒径分别为25kg和280nm时,经过100min抛光,亚表面损伤深度最小值达到0.9nm.在集群磁流变抛光中抛光压力是影响亚表面损伤深度的主要因素,当抛光压力为25kg时,集群磁流变抛光可快速去除亚表面损伤.     

平面和曲面光学零件气囊抛光材料去除的比较研究

气囊数控抛光是近年来一种新兴的先进光学制造技术,采用柔性的气囊作为抛光工具并以进动的方式进行加工。首先简要阐述了气囊抛光的抛光原理,然后针对平面和曲面光学零件,在自行研制的气囊抛光实验样机上进行了抛光实验。被抛光光学元件的材料去除是在抛光区内实现的。研究了进动角、气囊压缩量、气囊内部压力、气囊转速、抛光时间以及工件的曲率半径几种重要的工艺参数对平面工件和球面工件抛光接触区大小和形状影响情况的异同。在此基础上,总结了气囊抛光材料去除的影响规律。给出了几种重要工艺参数在平面工件和球面工件上取值范围。     

纳米α-Al2O3磨料抛光单晶硅片光滑表面的形成机理

"将纳米α-Al2O3粉体配制成抛光液并冷冻成冰结抛光垫对单晶硅片进行了抛光,用原子力显微镜观察了抛光表面的微观形貌并测量了其表面粗糙度,采用透射电镜观察了单晶硅片抛光后的断面形貌．为进一步分析抛光过程中的化学作用机理,采用X射线光电子能谱分析了单晶硅片抛光后表面的化学成分．利用纳米压痕仪的划痕附件对单晶硅片进行了划痕测试,研究了抛光过程中的机械作用机理．结果表明纳米α-Al2O3磨料冰冻抛光单晶硅片时,在1 mm￡1 mm的范围内得到了微观表面粗糙度为0.367 nm的超光滑表面,亚表面没有任何损伤,材     

碳化硅表面硅改性层的磁介质辅助抛光

为了实现碳化硅表面硅改性层的精密抛光,获得高质量光学表面,对磁介质辅助抛光技术进行研究。设计了适合碳化硅表面硅改性层抛光的磁介质辅助抛光工具,并对抛光工具的材料去除函数进行研究。针对材料去除函数的特性,对数控磁介质辅助抛光的驻留时间算法进行了研究。采用磁介质辅助抛光技术对碳化硅表面硅改性层平面样片进行了抛光实验。经过一次抛光迭代,碳化硅样片表面硅改性层的面形精度(均方根)由0.049λ收敛到0.015λ（λ=0.6328 μm）,表面粗糙度从2 nm改善至0.64 nm。实验结果表明基于矩阵代数的驻留时间算法有效,磁介质辅助抛光适合碳化硅表面硅改性层加工。     

抛光液的pH值对抛光元件表面粗糙度的影响

减小大孔径超光滑玻璃表面的粗糙度是提高抛光质量的关键。实验研究了抛光过程中pH值对抛光元件表面粗糙度的影响。结果表明:抛光液的pH值对抛光元件表面粗糙度有较明显的影响;抛光过程中抛光液的pH值会随抛光时间而变化;抛光过程中,当保持抛光液处于微碱状态,且离抛光粉的等电离点较远时,抛光元件表面具有较小的粗糙度。     

抛光区域几何特征与流场创成关键参数关系

磁流变抛光在其实际工作过程中,抛光区域几何特征的不同将会对流场创成的关键参数产生很大的影响。针对此问题建立三维模型与实验仿真展开研究。在研究抛光区域几何特征与流场创成关键参数的关系时,先改变抛光区域形状,观察其对流场创成中剪切应力、压力产生的影响;再控制抛光区域的形状相同时,通过改变抛光区域尺寸大小,观察对流场创成中剪切应力、压力产生的影响。结果表明:当抛光区域形状不同时,抛光区域为凹面时剪切应力最大,抛光区域为凸面时剪切应力最小。当抛光区域形状为凸面时,抛光区域两边的剪切应力随着抛光区域曲率大小增大而增大;当抛光区域形状为凹面,抛光区域两边的剪切应力随着抛光区域曲率大小增大而减小。当抛光区域形状不同时,抛光区域为凹面时压力最大,抛光区域为凸面时压力最小。当抛光区域形状为凸面时,抛光区域处的压力随着抛光区域曲率增大而增大;当抛光区域形状为凹面时,抛光区域处的压力随着抛光区域曲率增大而减小。     

Inhibitors for organic phosphonic acid system abrasive free polishing of Cu

Organic phosphonic acid system abrasive free slurry for copper polishing is developed in our earlier work. Since material removal rate is too high to be applied as precision polishing slurry for copper, inhibitors are needed. Experiment results also show us that the most commonly used inhibitor benzotriazole is unsuitable for this abrasive free slurry, and then another kind of compound inhibitors for this organic phosphonic acid system abrasive free slurry are developed. The compound inhibitors, consisting of ascorbic acid and ethylene thiourea, can control the material removal rate and also reduce surface roughness. XPS results show that, in the compound inhibitors, ascorbic acid participates in the surface chemical reaction, forms passivating layer on copper surface and helps to control the material removal rate. Corrosion current calculated from polarization curve is consistent with material removal rate. Ethylene thiourea contributes to the reduction of surface roughness, which can be indicated by the peak shape change of S_2p in XPS results.     

LiNbO3芯片的无损边缘抛光实验

以抛光垫抛光工艺为基础,研究出一套完整的新型无损边缘抛光工艺,成功实现了高精度光纤陀螺集成光学调制器LiNbO3芯片边缘的无损抛光。即在分析LiNbO3芯片边缘抛光过程中棱边损伤产生原因的基础上,提出3条解决措施:控制研抛浆料中的大颗粒;选择低亚表面损伤的抛光方式;抛光颗粒的大小接近或小于临界切削深度的2倍。加工工件棱边在1 500显微镜下观察无可见缺陷,芯片端面的表面粗糙度Ra0.8 nm,表面平面度优于/2,满足了LiNbO3芯片无损边缘抛光要求。同时,该工艺方法具有较大的推广应用价值。     

环形抛光中频误差的计算模拟北大核心CSCD

通过建立环形抛光的去除模型,从理论上分析了转速比、槽形、元件摆动对于抛光结果的影响,并分析了中频误差产生的原因。模拟结果表明:转速比的差异会产生较大的低频误差,而中频误差会随着低频误差的降低而降低;槽形是中频误差的主要来源,复杂的非对称不规律槽形使抛光路径复杂化,降低中频误差;同时元件的小幅度摆动能够使抛光更加均匀,减小定心式抛光造成的元件表面规则状纹路结构,从而有效减小元件的中频误差。     

抛光工艺参数对熔石英元件低频面形精度的影响

根据工件与抛光盘的相对运动关系及熔石英元件抛光加工材料去除模型,系统分析了转速比和偏心距等参数对材料去除函数的影响。通过理论分析和抛光加工实验,研究了不同工艺参数对低频段面形精度的影响规律。利用高分辨率检测仪器对熔石英元件低频面形误差进行了检测,优选出较佳的抛光工艺参数组合,并进行了相应的实验验证,提出了提高光学元件抛光加工低频面形质量的相应措施。     

Concerning the impact of polishing induced contamination of fused silica optics on the laser-induced damage density at 351 nm

We analyze the effect of polishing induced contaminants on the laser-induced damage density at the wavelength of 351 nm. Fused silica polished parts were manufactured using various polishing processes. If previous works have shown that high polishing induced cerium content leads to high laser-induced damage density, we show that for low cerium content, there is no correlation between the amount of polishing induced cerium contamination in the part interface and the damage density. This can be also extended to other polishing induced contaminants. These results provide new information for the understanding of laser damage initiation.     

透镜不胶盘单件抛光技术

本文介绍了在ＹＧ３６６高速抛光机上进行的透镜不胶盘单件抛光技术。这一新的抛光方法比弹性成盘法和刚性成盘法有许多优点：它省掉了许多辅助工序，缩短了抛光时间，所以生产周期短，效率高，成本低。同时给出了根据透镜的结构参数进行生产技术准备和评估抛光过程稳定性的公式。最后提出了进一步改进的设想。     

Novel cavitation fluid jet polishing process based on negative pressure effects

Traditional abrasive fluid jet polishing (FJP) is limited by its high-pressure equipment, unstable material removal rate, and applicability to ultra-smooth surfaces because of the evident air turbulence, fluid expansion, and a large polishing spot in high-pressure FJP. This paper presents a novel cavitation fluid jet polishing (CFJP) method and process based on FJP technology. It can implement high-efficiency polishing on small-scale surfaces in a low-pressure environment. CFJP uses the purposely designed polishing equipment with a sealed chamber, which can generate a cavitation effect in negative pressure environment. Moreover, the collapse of cavitation bubbles can spray out a high-energy microjet and shock wave to enhance the material removal. Its feasibility is verified through researching the flow behavior and the cavitation results of the negative pressure cavitation machining of pure water in reversing suction flow. The mechanism is analyzed through a computational fluid dynamics simulation. Thus, its cavitation and surface removal mechanisms in the vertical CFJP and inclined CFJP are studied. A series of polishing experiments on different materials and polishing parameters are conducted to validate its polishing performance compared with FJP. The maximum removal depth increases, and surface roughness gradually decreases with increasing negative outlet pressures. The surface becomes smooth with the increase of polishing time. The experimental results confirm that the CFJP process can realize a high material removal rate and smooth surface with low energy consumption in the low-pressure environment, together with compatible surface roughness to FJP.     

Surface acoustic wave studies of subsurface damage

We have measured the attenuation of surface acoustic waves on polished substrates and correlated the frequency-dependent attenuation with sub-surface damage. The damage was produced in single crystal lithium niobate samples by lapping and polishing with commercially available diamond compound. Surface acoustic wave attenuation on these samples was measured from 100 MHz to 1.5 GHz using interdigital transducers, thus covering depths ranging from 35 μm to 2 μm below the lithium niobate surface     

Comparison of diamond film adhesion on molybdenum substrates with different surface morphologies

To evaluate the effect of substrate morphology on the adhesion of diamond film, two types of substrate morphology of molybdenum (Mo) were compared. The two morphology types were formed by polishing a Mo substrate with SiC abrasive paper along one direction (anisotropic morphology) and by polishing the Mo substrate with diamond powder in a random direction (isotropic morphology).Ultrasonic cavitation tests were conducted to evaluate the adhesion of the diamond films on these Mo substrates. In the case of low surface roughness, there was very little difference between the effects of SiC abrasive paper polishing and diamond powder polishing. In the case of high surface roughness, the adhesion of the diamond film on the SiC paper polished Mo substrate was larger than that of the diamond film on the diamond powder polished Mo substrate. Detachment of the diamond film from the SiC paper polished Mo substrate progressed along the polishing direction; while detachment of the diamond film from the diamond powder polished Mo substrate progressed in a random direction. It was thought that the detachment of the diamond film from a Mo substrate having an anisotropic polishing trace was suppressed because the anisotropic grooves restricted the formation of connections between the points of detachment at right angles to the groove direction. Therefore, the anisotropic surface morphology of the Mo substrate is effective for improving the adhesion of diamond film.     

机器人气囊抛光去除函数稳定性分析

基于气囊抛光技术和工业机器人平台开发光学元件精密抛光系统，既能满足光学元件快速抛光环节的高效率和高精度的要求，又可以降低开发成本，是极具潜力的抛光设备开发方案。气囊抛光具有稳定的且确定的材料去除特性，通常要求抛光斑稳定性在90%左右。针对机器人气囊抛光系统在多步离散进动抛光过程中机器人末端刚度对气囊抛光稳定性的影响展开研究，通过建立机器人末端刚度矩阵，获得机器人末端变形；基于Preston理论，建立含变形误差的气囊抛光去除函数。最后设计4步离散定点抛光实验验证机器人气囊抛光系统稳定性。根据结果可知抛光斑在XY截面轮廓线上皆呈类高斯形状，且XY截面轮廓线基本一致，具有比较好的重合度；对比不同抛光位置的截面轮廓线，其相对误差小于5%，由此可验证机器人气囊抛光系统在离散进动抛光时具有较好的稳定性。