Application of positron annihilation induced Auger Electron Spectroscopy to the study of surface chemistry

Positron annihilation induced Auger Electron Spectroscopy (PAES), makes use a beam of low energy positrons to excite Auger transitions by annihilating core electrons. This novel mechanism provides PAES with a number of unique features which distinguishes it from other methods of surface analysis. In PAES the very large collisionally induced secondary electron background which is present under the low energy Auger peaks using conventional tecniques can be eliminated by using a positron beam whose energy is below the range of Auger electron energies. In addition, PAES is more surface selective than conventional Auger Spectroscopy because the PAES signal originates almost exclusively from the topmost atomic layer due to the fact that the positrons annihilating with the core electrons are trapped in an image correlation well just outside the surface. In this paper, recent applications of Positron Annihilation Induced Auger Electron Spectroscopy (PAES) to the study of surface structure and surface chemistry will be discussed including studies of the growth, alloying and inter-diffusion of ultrathin layers of metals, metals on semiconductors, and semiconductors on semiconductors. In addition, the possibilities for future application of PAES to the study of catalysis and surface chemistry will be outlined.     

Nanoscale oxidation of Cu100: oxide morphology and surface reactivity

Surface oxidation of Cu(100) in O(2) has been investigated in situ by x-ray photoelectron spectroscopy, x-ray induced Auger electron spectroscopy (XAES), and scanning tunneling microscopy (STM) as a function of surface temperature (T(S)=303-423 K) and O(2) pressure (p(O(2) )=3.7 x 10(-2)-213 mbars). Morphology of the oxide on the surface and in the near surface layers is characterized by utilizing STM and the inelastic electron background of the XAES O KLL signal. Analysis of the peak shape of the XAES Cu LMM facilitates the quantification of Cu, Cu(2)O, and CuO surface concentrations. The authors conclude that the surface oxidation of Cu(100) proceeds in three distinct steps: (1) Dissociative adsorption of O(2) and the onset of Cu-(2 square root 2 x square root 2)R45 degrees -O (theta(O)=0.5 ML) surface reconstruction, (2) initial formation of Cu(2)O and the appearance of 1.8 A high elongated islands that also adopt the Cu-(2 square root 2 x square root 2)R45 degrees -O structure, and (3) formation of highly corrugated Cu-O islands which together with the surface reconstruction strongly enhance the reactivity of the surface towards further oxide formation. Both Cu(2)O and CuO formations are enhanced by increased surface temperature, but no pressure dependence can be seen.     

Oxidation‐induced nanostructures on Cu{100}, Cu(Ag) and Ag/Cu{100} studied by photoelectron spectroscopy

Initial surface oxidation and nanoscale morphology on Cu{100}, Cu(Ag) and Ag/Cu{100} have been investigated in situ by X‐ray photoelectron spectroscopy (XPS), X‐ray induced Auger electron spectroscopy (XAES) and the inelastic electron background analysis as a function of oxygen exposure at 3.7 × 10^?2 and 213 mbar pressures at a surface temperature of 373 K. Relative Cu₂O concentrations have been quantified by analysis of the peak shape of the XAES Cu LMM transition. The surface morphology of Cu₂O islands and the Ag layer has been characterized by inelastic electron background analysis of XAES O KLL and Ag 3d transitions. Oxygen‐induced segregation of Cu, as well as the subsequent Cu₂O island formation on Cu(Ag) and Ag/Cu{100} surfaces, has been investigated quantitatively. Our results indicate that Ag has a clear inhibitive effect on the initial oxidation and Cu₂O island formation on Cu(Ag) and Ag/Cu{100} surfaces. The Cu₂O islands are also observed to remain highly strained on Ag/Cu{100} even at higher O₂ exposures. The results suggest that strained Cu₂O islands eventually penetrate through the buried Ag layer, and in conjunction with segregating Cu atoms enable the oxidation to proceed at a similar rate to or even faster than on the unalloyed Cu surface. Copyright © 2007 John Wiley & Sons, Ltd.     

Ba deposition and oxidation on theta-Al2O3/NiAl(100) ultrathin films. Part II: O2(g) assisted Ba oxidation

Ba deposition on a theta-Al(2)O(3)/NiAl(100) substrate and its oxidation with gas-phase O(2) at various surface temperatures are investigated using X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and temperature programmed desorption (TPD) techniques. Oxidation of metallic Ba by gas-phase O(2) at 800 K results in the growth of 2D and 3D BaO surface domains. Saturation of a metallic Ba layer deposited on theta-Al(2)O(3)/NiAl(100) with O(2)(g) at 300 K reveals the formation of BaO(2)-like surface states. These metastable peroxide (O(2)(2-)) states are converted to regular oxide (O(2-)) states at higher temperatures (800 K). In terms of thermal stability, BaO surface layers (theta(Ba) < 5 ML) that are formed by O(2)(g) assisted oxidation on the theta-Al(2)O(3)/NiAl(100) substrate are significantly more stable (with a desorption/decomposition temperature of c.a. 1050 K) than the thick (2 < theta(Ba) < 10 ML) metallic/partially oxidized Ba layers prepared in the absence of gas-phase O(2), whose multilayer desorption features appear as low as 700 K.     

Oxide and nitride protective layers on stainless steel studied by AES,WDS and XPS

Protective surface layers on AISI 321 stainless steel were prepared by thermal treatments at two different temperatures in air and two controlled atmospheres. Different oxide and/or nitride layers were formed. Surface morphology of the layers was investigated by scanning electron microscopy (SEM). Auger electron spectroscopy (AES) depth profiling of the samples was performed. Since depth profiling suggested layer thicknesses of the order of hundreds of nanometres, an attempt was made to obtain some fast, averaged information about the layer compositions using wavelength dispersive spectroscopy (WDS) at two different beam energies to obtain probing depths best suited to the layer thickness. X‐ray photoelectron spectroscopy (XPS) profiling of one layer was also performed to obtain information about the chemical states of the elements inside the layer. The analysed samples showed considerable differences with respect to their surface morphology, oxide/nitride layer thicknesses, compositions and layer–metal interface thickness. Copyright © 2007 John Wiley & Sons, Ltd.     

Temporal evolution of benzenethiolate SAMs on Cu(100)

The structure and thermal stability of self-assembled monolayers (SAMs) of benzenethiolate (BT) on Cu(100) have been studied by means of thermal desorption spectroscopy (TDS), scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), UV photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), and near-edge X-ray adsorption fine structure spectroscopy (NEXAFS). Vapor deposition at room temperature yields a well-ordered, densely packed c(6 × 2) saturation structure. At room temperature, this film is, however, metastable and transforms via partial decomposition by cleavage of the S-C bond into a less densely packed layer that reveals a coexisting p(2 × 2) phase. Such a transition occurs on a time scale of several days and is accompanied by a reduction of the work function change with respect to the bare Cu(100) surface from Δ? = -0.9 eV for a freshly prepared saturated layer to -0.5 eV for an aged film. TDS experiments exhibit the presence of two distinct desorption channels (dissociative and intact desorption) occurring at different temperatures that reflects a variation of the local Cu-S interaction strength of BT at differently coordinated adsorption sites. Heating to above room temperature causes a rapid degradation and continuous thinning of BT films whereas above 500 K all thiolate species have desorbed or dissociated, leaving a sulfide overlayer behind that is accompanied by a substrate reconstruction. Interestingly, the upright orientation of BT adopted in the saturated monolayer remains almost identical upon heating and demonstrates the absence of downward tilting upon thermally induced thinning of the film.     

Anwendung der quantitativen Augerelektronenspektroskopie (AES) auf dünne Oberflächenschichten

Zusammenfassung Die Grundgleichungen der quantitativen Auger-Elektronenspektroskopie werden auf dünne, homogene Schichten angewendet und am Beispiel einer Sn-Segregationsschicht auf einer Cu(111)-Oberfläche durch Vergleich mit Ergebnissen der Beugung niederenergetischer Elektronen (LEED) überprüft. Durch Variation der Oberflächenbelegung ist es möglich, das Verhältnis der mittleren freien Weglängen der Augerelektronen aus Augerübergängen verschiedener Energien des Matrixelements unmittelbar zu erhalten.

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Application of quantitative Auger electron spectroscopy (AES) to thin surface layers

Summary The basic equations of quantitative Auger electron spectroscopy are applied to thin, homogeneous layers and are examined with reference to the example of a Sn segregation layer on a Cu(III) surface by comparison with the results for the diffraction of low-energy electrons (LEED). By variation of the surface coverage it is possible to obtain directly the ratio of the mean free parts of the Auger electron from Auger transitions of various energies of the matrix element.

     

Surface and subsurface oxidation of Mo2C/Mo(100): low-energy ion-scattering, auger electron, angle-resolved X-ray photoelectron, and mass spectroscopy studies

The interaction of oxygen with a carburized Mo(100) surface was investigated at different temperatures (300-1000 K). The different information depths of low-energy ion-scattering (LEIS) spectroscopy, with topmost layer sensitivity, Auger electron spectroscopy (AES), and angle-resolved X-ray photoelectron spectroscopy (ARXPS) allowed us to discriminate between reactions on the topmost layer and subsurface transformations. According to ARXPS measurements, a carbide overlayer was prepared by the high-temperature decomposition of C(2)H(4) on Mo(100), and the carbon distribution proved to be homogeneous with a Mo(2)C stoichiometry down to the information depth of XPS. O(2) adsorbs dissociatively on the carbide layer at room temperature. One part of the chemisorbed oxygen is bound to both C and Mo sites, indicated by LEIS. Another fraction of oxygen atoms probably resides in the hollow sites not occupied by C. The removal of C from the outermost layer by O(2), in the form of CO, detected by mass spectroscopy (MS), was observed at 500-600 K. The carbon-depleted first layer is able to adsorb more oxygen compared to the Mo(2)C/Mo(100) surface. Applying higher doses of O(2) at 800 K results in the inward diffusion of O and the partial oxidation of Mo atoms. This process, however, is not accompanied by the removal of C from subsurface sites. The depletion of C from the bulk starts only at 900 K (as shown by MS, AES, and XPS), very probably by the diffusion of C to the surface followed by its reaction with oxygen. At T(ads) = 1000 K, the carbon content of the sample, down to the information depth of XPS, decreased further, accompanied by the attenuation of the C concentration gradient and a substantially decreased amount of oxygen.     

Oxidation, Diffusion and Segregation in CuNi(Mn) Films Studied by AES

 The surface and in-depth compositions of sputter-deposited Cu_0.57Ni_0.42Mn_0.01 thin films were studied by Auger electron depth profiling after thermal treatment. The samples were thermally cycled to maximum temperatures of 300 °C to 550 °C in air, argon and forming gas (N₂, 5 vol. % H₂). Linear least-squares fit to standard spectra and factor analysis were applied to separate the overlapping Auger transitions of Cu and Ni. Under bombardment by 4 keV argon ions, CuNi(Mn) layers display bombardment-induced surface enrichment of Ni in the same extent as binary CuNi alloys. At sufficiently high oxygen partial pressures, a duplex oxide layer is formed and a thick surface copper oxide overgrows the initial nickel oxide. In reducing atmosphere selective oxidation of manganese takes place. A capping NiCr layer prevents CuNi(Mn) from being oxidized, but the film configuration is degraded with increasing annealing temperature due to formation of a surface chromium oxide and diffusion of Ni from the CuNi(Mn) layer into the NiCr/CuNi(Mn) interface.     

Nucleation process in Cu3Au(001) surface region around the order-disorder phase transition

The element distribution in the Cu(3)Au(001) surface region has been determined on the basis of directional Auger electron spectroscopy polar profiles measurements and interpreted in the frame of thermodynamic approach formulated for the inhomogeneous systems by using the Néel sublattices concept. Both approaches, experimental and theoretical, allowed us to present the temperature dependence of element concentration in a layer resolved mode. The wide temperature range explored in the experiment ensured the large data base for the theoretical analysis which enabled us to propose the distribution of intra-layer and inter-layer pairwise interactions leading to proper temperature dependence of segregation profiles in the surface region. This kind of interaction distribution can be understood as strain induced.     

超高真空俄歇电子能谱原位加热和GaN热效应研究

An in situ heating system was built for the Auger electron spectroscopy to investigate the thermal effect of Auger lines. A GaN sample was studied in this system. The kinetic energy of Ga LMM and MVV Auger lines were observed to shift negatively with temperature increasing. By using ab initio calculation, the theoretical Ga MVV Auger line shape was fit, which well reflects the inner property of the line. The Auger shift with heating is related with the valence electron rearrangement in the thermal expansion of the local bonds.     

Ambient Pressure X-ray Photoelectron Spectroscopy Study of Oxidation Phase Transitions on Cu(111) and Cu(110)

The surface structure effect on the oxidation of Cu has been investigated by performing ambient-pressure X-ray photoelectron spectroscopy (APXPS) on Cu(111) and Cu(110) surfaces under oxygen pressures ranging from 10⁻⁸ to 1 mbar and temperatures from 300 to 750 K. The APXPS results show a subsequential phase transition from chemisorbed O/Cu overlayer to Cu₂O and then to CuO on both surfaces. For a given temperature, the oxygen pressure needed to induce initial formation of Cu₂O on Cu(110) is about two orders of magnitude greater than that on Cu(111), which is in contrast with the facile formation of O/Cu overlayer on clean Cu(110). The depth profile measurements during the initial stage of Cu₂O formation indicate the distinct growth modes of Cu₂O on the two surface orientations. We attribute these prominent effects of surface structure to the disparities in the kinetic processes, such as the dissociation and surface/bulk diffusion over O/Cu overlayers. Our findings provide new insights into the kinetics-controlled process of Cu oxidation by oxygen.     

Growth and characterization of ultrathin carbon films on electrodeposited Cu and Ni

Ultrathin carbon films were grown on different types of metallic substrates. Free‐standing foils of Cu and Ni were prepared by electroforming, and a pure Ni film was obtained by galvanic displacement on a Si wafer. Commercial foil of Ni 99.95% was used as a reference substrate. Carbon films were grown on these substrates by chemical vapour deposition in a CH₄‐H₂ atmosphere. Obtained films were characterized by Raman spectroscopy, X‐ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, and ultraviolet photoemission spectroscopy. The XPS at grazing collection angle was used to determine the thickness of carbon films. Depending on the deposition parameters, the films of graphene or graphite were obtained on the different substrates. The uniformity of graphene and its distribution over the sample area were investigated from Raman data, optical images, and XPS chemical maps. The presence of graphene or graphite in the films was determined from the Raman spectra and Auger peak of C KVV. For this purpose, the D parameter, which is a fingerprint of carbon allotropes, was determined from C KVV spectra acquired by using X‐rays and electron beam. A formation of an intermediate layer of metal hydroxide was revealed in the samples with graphene overlayer.     

Pressure-dependent Ni-O phase transitions and Ni oxide formation on Pt(111): an in situ STM study at elevated temperatures

Growth, atomic structure and O2 partial pressure dependent phase transitions of Ni-O structures and thin NiO films on Pt(111) have been studied using scanning tunnelling microscopy (STM), low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES). In situ STM experiments were performed during film growth by reactive metal deposition at elevated temperatures (400-550 K) and variable O2 pressure. Depending on the substrate temperature, one-dimensional network-like Ni-O structures and islands with (7x1) and (4x2) reconstructions are formed during the initial stages of growth. These structures transform reversibly to a (2x2) reconstruction in a narrow O2 pressure range of 1.5-2x10(-6) mbar and can be monitored by in situ STM. Upon reduction of the O2 pressure to <10(-10) mbar pseudomorphic Ni monolayers are obtained. The defect-free ordering of Ni atoms on Pt(111) in a single stacking domain indicates an O-surfactant induced growth mode. The structural properties of the O2 pressure-dependent Ni-O phases are discussed in a simple model assuming NiO(001)-like atomic arrangements in the adsorbate overlayer. At higher coverage stable (111)-oriented NiO islands grow in a three-dimensional mode.     

Epitaxy and thermal behaviour of metastable metal films

We demonstrate the complexity of metal-on-metal epitaxy. Low-energy ion scattering and medium-energy electron diffraction were used to study the growth, structure and thermal stability of iron deposited on a Cu(001) surface. The system exhibits as a function of film thickness a rich variety of morphological and structural phases. At smallest coverages (< 2 ML) iron does not grow layer-by-layer at room temperature. Iron is even partially incorporated into the copper substrate. Near 2 ML the substrate is covered for the most part (90%) with Fe and at even higher coverages layer-by-layer growth occurs, leading to well-ordered fcc iron films. Above 10 ML a structural phase transition into the bcc equilibrium modification is observed. All of the deposited films exhibit additional thermal metastability. Heating the samples causes enrichment of the surface with copper, resulting in a Cu/Fe/Cu sandwich morphology with a Cu overlayer of initially monoatomic height on top of the iron layers, which remain essentially intact. The onset temperature of Cu diffusion depends on the film thickness, but is always far below the values for regular bulk diffusion.     

Epitaxial growth of single-crystalline Al(2)O(3) films on Cr(2)O(3)(0001)

Thin, crystallographically oriented single-crystalline Al2O3 films can be grown epitaxially on Cr2O3(0001) by codeposition of Al vapor and O2 at a substrate temperature of 825 K. The properties and growth of these films were monitored by Auger electron spectroscopy (AES), low-energy electron diffraction (LEED), low-energy ion scattering (LEIS), and X-ray photoelectron spectroscopy (XPS). Two routes of preparation were investigated: (i) stepwise growth by alternating deposition of Al at room temperature and subsequent exposure to O2 at elevated temperatures; (ii) codeposition of Al and O2 at T > 800 K. The first route was consistently found to result in the growth of a complex interfacial oxide followed by the growth of polycrystalline Al2O3. The second mode of preparation provided homogeneous and ordered, probably (0001)-oriented, films of Al2O3 that maintained a LEED pattern up to a thickness around 10 A. The surface sensitive Cr MVV Auger transition at 34 eV was completely attenuated once the Al2O3 layer had reached a thickness of 6 A, pointing to film homogeneity at an early stage. This was confirmed by the absence of a significant Cr signal in LEIS spectra.     

High resolution electron energy loss measurements of Na/Cu(111) and H2O/Na/Cu(111): dependence of water reactivity as a function of Na coverage

Collective electronic excitations occurring in Na layers grown on Cu(111) and in H2O/Na/Cu(111) have been investigated at room temperature by high resolution electron energy loss spectroscopy. Loss spectra taken for a coverage between 0.55 and 0.70 ML of Na are characterized by a feature at 3.0 eV assigned to a Mie resonance. Further increasing the Na coverage leads to the appearance of the Na surface plasmon at 3.9 eV. Water molecules dissociate on Na layers as shown by the appearance of the OH-Na vibration. Upon water adsorption, relevant effects on both electronic excitations and vibrational modes were observed as a function of Na coverage.     

石墨炉内石墨探针表面上的原子化机理研究(Ⅴ)——锰的原子化机理

在石墨炉原子吸收光谱(GFAAS)法中,反应前后的化合物形态可以借助于X射线衍射(XRD)、俄歇电子能谱(AES)及化学分析光电子能谱(ESCA)等现代分析仪器来鉴定,本文综合利用上述分析方法,对锰化合物在石墨探针表面上于不同温度下的化学形态进行鉴定,结合元素的灰化和原子化曲线,详细地研究和阐述了锰的原子化机理。     

Effect of X-rays on the surface chemical state of Al2O3, V2O5, and aluminovanadate oxide

The surface composition of Al(2)O(3), V(2)O(5), and aluminovanadate oxide, "V-Al-O", was studied by X-ray photoelectron spectroscopy (XPS), using Mg K(alpha) to reveal time-dependent irradiation damage of samples. Spectral parameters such as peak intensity and width and absolute and relative peak binding energies were evaluated along with the Auger parameter. Irradiation of Al(2)O(3) was found to cause partial dehydration of the surface hydroxide film, while sputter-cleaned alumina turned out to be resistant to X-rays. In V(2)O(5), a small fraction of V(4+) species was seen to form during X-ray exposure. X-ray induced damage in Al(2)O(3) and V(2)O(5) was compared to that caused by bombardment with 500 eV argon ions. The V-Al-O material which is used as a precursor of oxynitride catalysts for ammoxidation turned out to be most susceptible and could be damaged by low X-ray doses. An appreciable reduction from the V(5+) to the V(4+) formal oxidation state (the latter increases from 20 to 45% after 150 min time of exposure to Mg K(alpha) at 150 W) was found along with the decomposition of aluminum hydroxide which is believed to act as an amorphous support in this catalyst. Gas-phase analysis during X irradiation demonstrated desorption of oxygen and water molecules. X-ray induced damage is believed to be caused by electron-hole pair generation and Auger decay rather than by thermal effects since the sample surface temperature increased only slightly.     

Synthesis and oxidation of CeN film: an in situ investigation by electron spectroscopies

Nearly stoichiometric CeN film is synthesized on a Re(0001) substrate in an ultrahigh vacuum system involving highly active N atoms in the growth process, generated by thermal decomposition of NH3 by use of a hot tungsten filament. The electronic structure of the CeN film as prepared is equivalent to that of a single crystal observed by in situ Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). AES and XPS investigations show that CeN film is directly oxidized to CeO2 after exposure to O2 at room temperature. However, CeN changes into Ce2O3 after annealing in approximately 10(-6) mbar of O2 atmosphere at elevated temperature.