Fabrication and characterization of CdS-sensitized TiO<Subscript>2</Subscript> nanotube photoelectrode

CdS quantum dot (Qd)-sensitized TiO₂ nanotube array photoelectrode is synthesised via a two-step method on tin-doped In₂O₃-coated (ITO) glass substrate. TiO₂ nanotube arrays are prepared in the ethylene glycol electrolyte solution by anodizing titanium films which are deposited on ITO glass substrate by radio frequency sputtering. Then, the CdS Qds are deposited on the nanotubes by successive ionic layer adsorption and reaction technique. The resulting nanotube arrays are characterized by scanning electron microscopy, X-ray diffraction (XRD) and UV–visible absorption spectroscopy. The length of the obtained nanotubes reaches 1.60 μm and their inner diameter and wall thickness are around 90 and 20 nm, respectively. The XRD results show that the as-prepared TiO₂ nanotubes array is amorphous, which are converted to anatase TiO₂ after annealed at 450 °C for 2 h. The CdS Qds deposited on the TiO₂ nanotubes shift the absorption edge of TiO₂ from 388 to 494 nm. The results show that the CdS-sensitized TiO₂ nanotubes array film can be used as the photoelectrode for solar cells.     

A facile two-step preparation of compact and crystalline Sb2S3 thin film for efficient solar cells

The two-step preparation of compact and crystalline Sb₂S₃ thin films was firstly reported using the pyrolysis of the Sb-butyldithiocarbamate complex solution in DMF. The porous and amorphous Sb₂S₃ thin films were successfully prepared at 170 °C for 30 min, and then can be converted to compact and crystalline Sb₂S₃ thin films at 200 °C for 30 min or 300 °C for 2 min. The corresponding solar cells with the architecture of FTO/TiO₂ compact layer/Sb₂S₃/spiro-OMeTAD/Au achieved the photoelectric conversion efficiency of 4.16% at 200 °C and 5.05% at 300 °C. The two-step preparation of the compact and crystalline Sb₂S₃ thin films can provide the feasible approach for the fabrication of various microstructure thin film solar cells and the low preparation temperature of 200 °C was also attractive to assemble the flexible Sb₂S₃ thin film solar cells.     

ZnS overlayer on in situ chemical bath deposited CdS quantum dot-assembled TiO2 films for quantum dot-sensitized solar cells

ZnS overlayers were deposited on the CdS quantum dot (QD)-assembled TiO₂ films, where the CdS QDs were grown on the TiO₂ by repeated cycles of the in situ chemical bath deposition (CBD). With increasing the CdS CBD cycles, the CdS QD-assembled TiO₂ films were transformed from the TiO₂ film partially covered by small CdS QDs (Type I) to that fully covered by large CdS QDs (Type II). The ZnS overlayers significantly improved the overall energy conversion efficiency of both Types I and II. The ZnS overlayers can act as the intermediate layer and energy barrier at the interfaces. However, the dominant effects of the ZnS overlayers were different for the Types I and II. For Type I, ZnS overlayer dominantly acted as the intermediate layer between the exposed TiO₂ surface and the electrolyte, leading to the suppressed recombination rate for the TiO₂/electrolyte and the significantly enhanced charge-collection efficiency. On the contrary, for Type II, it dominantly acted as the efficient energy barrier at the interface between the CdS QDs and the electrolyte, leading to the hindered recombination rate from the large CdS QDs to the electrolyte and thus enhanced electron injection efficiency.     

Synthesis,biocompatibility and luminescence properties of quantum dots conjugated with amino acid-functionalized β-cyclodextrin

A series of CdSe and CdSe/CdS quantum dots (QDs) labeled with amino acid-modified β-cyclodextrin (β-CD) was prepared by a simple ultrasonic method. These amino acid-modified β-CD-coated QDs are very soluble and stable in biological buffer. They also have high colloidal stability and strong optical emission properties that are similar to those of untreated tri-n-octylphosphine oxide (TOPO)-coated QDs. The quantum yields (QYs) of these amino acid-modified β-CD-coated CdSe and CdSe/CdS QDs in biological buffer were found to be very high. In particular, the QYs of the positively charged l-His-β-CD-coated CdSe/CdS QDs were as high as 33.5±1.8%. In addition, the fluorescence lifetime of these QDs was also very long in PBS solutions as determined by frequency domain spectroscopy. For example, the lifetime of l-His-β-CD-coated CdSe/CdS QDs was 8.6 ns. The in vitro cytotoxicity of these QDs in ECV-304, SH-SY5Y and HeLa cells was found to be lower. l-His-β-CD-coated CdSe/CdS QDs were the least cytotoxic (IC₅₀ 95.6±3.2 mg mL^?1 in ECV-304 cells after 48 h). The flow cytometry results show that the positively charged amino acid led to a considerable increase in biocompatibility of QDs. This may be attributed to the presence of an amino acid-modified β-CD outer layer, which enhanced the biocompatibility.     

Thermally evaporated CdS/CdTe thin film solar cells: Optimization of CdCl2 evaporation treatment on absorber layer

CdCl₂ treatment is crucial in the fabrication of highly efficient CdS/CdTe thin-film solar cells. This study reports a comprehensive analysis of thermal evaporated CdS/CdTe thin-film solar cells when the CdTe absorber layer is CdCl₂ annealed at temperatures from 340 to 440 °C. Samples were characterized for structural, optical, morphological and electrical properties. The films annealed at 400 °C showed better crystallinity with a cubic zinc blende structure having large grains. Higher refractive index, optical conductivity, and absorption coefficient were recorded for the CdTe films annealed at 400 °C with CdCl₂. Optimum photoactive properties for CdS/CdTe thin-film solar cells were also obtained when samples were annealed at 400 °C for 20 min with CdCl₂, and the best device exhibited V_OC of 668.4 mV, J_SC of 13.6 mA cm⁻², FF of 53.9% and an efficiency of 4.9%.     

Photocurrent enhancement of heat treated CdSe-sensitized titania nanotube photoelectrode

The self-organized titania nanotube arrays (NTAs) fabricated by anodisation has gained enormous interest due to its high spatial orientation, excellent charge transfer structure, and large internal surface area; all are crucial properties influencing the absorption and propagation of light. In this study, a composite material, CdSe nanoparticle/TiO₂ nanotube arrays (CdSe/TiO₂ NTAs) were assembled through the insertion of CdSe nanoparticles onto the anodized TiO₂ nanotube arrays via electrochemical deposition. The annealing temperature of CdSe/TiO₂ NTAs was varied from 200 to 350 °C and was found to play an important role in controlling the formation of CdSe nanoparticles on TiO₂ NTAs. Characterizations of the films were performed by using field emission scanning electron microscopy coupled with energy dispersive X-ray spectroscopy, high resolution transmission electron microscopes, X-ray diffractometry and UV–visible diffuse reflectance spectroscopy. The transient photocurrent was examined in a three-electrode system under halogen illumination by using the prepared film as the photoanode. It was found that the CdSe nanoparticles were susceptible to spread through electrochemical deposition and formed on the nanotubes by annealing in nitrogen atmosphere. The increment in annealing temperature has resulted in greater amount of CdSe loaded onto TiO₂ nanotube arrays. Therefore, a suitable annealing temperature can enhance the particle interaction, leading to considerable improvement in PEC performance. The sensitized CdSe/TiO₂ NTAs annealed at 250 °C displayed 84 folds improvement in photoconversion efficiency than that of bare TiO₂ NTAs counterparts.     

Electrosynthesis of TiO2 oxide film on ITO substrate and electrochemical comparative study of the oxide with its hydrated gel

Thin TiO₂ films obtained by cathodic electrosynthesis from an acidic aqueous bath containing TiOSO₄, H₂O₂ and KNO₃ on conductive glass indium tin oxide have been physically and electrochemically characterised. Secondary ion mass spectroscopy profile of the crystallised gel after heat treatment at 400 °C shows the presence of TiO₂ with traces of TiO and oxygen. X-ray patterns confirm the presence of anatase nanocrystallites for the annealed film and an amorphous structure for the non-annealed gel. Scattering electron microscopy surface micrographies reveal an opened porous nanostructure of the deposits. Cyclic voltammetry and impedance spectroscopic measurements reveal the different behaviour of the films obtained before and after the annealing, showing an important electrical activity of the non-annealed films. The dependence of capacitance values with potential in the anodic domain of depletion is obviously remarked from impedance plots for both gel and crystal forms of the film, which confirmed the fact that films obtained in this way have n-type properties. The potential of flat band equals −0.6 V/Ag/AgCl in pH range of 6.5 has been estimated according to Mott–Shottky curves for the crystallised oxide; meanwhile, the Mott–Shottky curve for the hydrated gel was nonlinear.     

Photoconductivity studies on amorphous and crystalline TiO<Subscript>2</Subscript> films doped with gold nanoparticles

In this work, amorphous and crystalline TiO₂ films were synthesized by the sol–gel process at room temperature. The TiO₂ films were doped with gold nanoparticles. The films were spin-coated on glass wafers. The crystalline samples were annealed at 100°C for 30 minutes and sintered at 520°C for 2 h. All films were characterized using X-ray diffraction, transmission electronic microscopy and UV-Vis absorption spectroscopy. Two crystalline phases, anatase and rutile, were formed in the matrix TiO₂ and TiO₂/Au. An absorption peak was located at 570 nm (amorphous) and 645 nm (anatase). Photoconductivity studies were performed on these films. The experimental data were fitted with straight lines at darkness and under illumination at 515 nm and 645 nm. This indicates an ohmic behavior. Crystalline TiO₂/Au films are more photoconductive than the amorphous ones.     

The Dynamic Resistance of CdS/CdSe/ZnS Co-Sensitized TiO2 Solar Cells

Quantum dots' sensitized solar cells (QDSSCs) can create the high-performance and low-cost photovoltaic in the future. In this study, we synthesized the film of TiO₂/CdS/CdSe/ZnS photoanodes by successive ionic layer adsorption reaction (SILAR) method. The absorption spectra, photoluminescent spectra and electrochemical impedance spectra (EIS) of the film TiO₂/CdS/CdSe/ZnS photoanodes show that the structure of energy levels in the conduction band (CB) of photoanode materials CdS, CdSe, and ZnS quantum dots (QDs) can absorb a great number of photons in each region and inject stimulated electrons quickly into the conduction band (CB) of TiO₂. Furthermore, we also studied the influence of the SILAR cycles on the dynamic resistance, the lifetime of electrons in QDSSCs through Nyquist and Bode.     

A spectroscopic ellipsometry study of TiO2 thin films prepared by ion-assisted electron-beam evaporation

Film characterization based on variable-angle spectroscopic ellipsometry (VASE) is desirable in order to understand physical and optical characteristics of thin films. A number of TiO₂ film samples were prepared by ion-assisted electron-beam evaporation with 200-nm nominal thickness, 2.0 Å/s deposition rate and 8 sccm oxygen flow rate. The samples were maintained at 250 °C during the deposition, and annealed in air atmosphere afterwards. As-deposited and annealed films were analyzed by VASE, spectrophotoscopy and X-ray diffractometry. From ellipsometry modeling process, the triple-layer physical model and the Cody–Lorentz dispersion model offer the best results. The as-deposited films are inhomogeneous, with luminous transmittance and band gap of 62.37% and 2.95 eV. The 300 °C and 500 °C are transition temperatures toward anatase and rutile phases, respectively. Increasing temperature results in an increase of refractive index, transmittance percentage and band gap energy. At 500 °C, the highest refractive index and band gap energy are obtained at 2.62 and 3.26 eV, respectively. The developed VASE-modeling process should be able to characterize other TiO₂ films, using similar physical and optical modeling considerations.     

Effect of thermal annealing on the structure and microstructure of TiO2 thin films

Nanostructured TiO₂ thin films have been prepared through chemical route using sol-gel and spin coating techniques. The deposited films were annealed in the temperature range 400–1000°C for 1 h. The structure and microstructure of the annealed films were characterized by GAXRD, micro-Raman spectroscopy and AFM. The as-deposited TiO₂ thin films are found to be amorphous. Micro-Raman and GAXRD results confirm the presence of the anatase phase and absence of the rutile phase for films annealed up to 700°C. The diffraction pattern of the film annealed at 800 to 1000°C contains peaks of both anatase and rutile reflections. The intensity of all peaks in micro-Raman and GAXRD patterns increased and their width (FWHM) decreased with increasing annealing temperature, demonstrating the improvement in the crystallinity of the annealed films. Phase transformation at higher annealing temperature involves a competition among three events such as: grain growth of anatase phase, conversion of anatase to rutile and grain growth of rutile phase. AFM image of the asdeposited films and annealed films indicated exponential grain growth at higher temperature.      

Selective synthesis of clinoatacamite Cu2(OH)3Cl and tenorite CuO nanoparticles by pH control

To investigate the shell deposited kinetics, CdSe quantum dots (QDs) and nanorods (NRs) with a maximum length of 17 nm were fabricated via organic synthesis routes. CdSe with a hexagonal crystal structure (wurtzite) favors epitaxial growth on the {002} surfaces when well-controlled conditions were used. The morphologies and sizes of CdSe samples depended strongly on chemicals and temperature. In the case of 320 °C, CdSe NRs with adjusted length of 7–17 nm were obtained from trioctylphosphine oxide (TOPO) and tetradecylphosphonic acid (TDPA). In contrast, short CdSe NRs (less than 10 nm) were created from octadecylphosphonic acid (ODPA) and trioctylamine (TOA). Spherical CdSe QDs were further fabricated using stearic acid (SA) and TOPO at 300 °C. CdSe cores were coated with Cd_0.5Zn_0.5S and CdTe shells. Anisotropic growth occurred during shell deposition because CdS shells grown preferentially on the {001} facet of the CdSe core. In the case of CdSe core prepared from TOPO and TDPA, CdSe/Cd_0.5Zn_0.5S core/shell samples prepared from long CdSe NRs (more than 10 nm) revealed a peanut morphology while the core/shell samples created from short ones (less than 10 nm) exhibited a spherical morphology. All of the CdSe/Cd_0.5Zn_0.5S core/shell samples revealed a similar length to that of the CdSe cores. This phenomenon was also observed for the core/shell samples fabricated using CdSe NRs prepared by ODPA and TOA. This is ascribed to the well-developed crystal structure of CdSe NRs fabricated using an organic synthesis at high temperature. In contrast, this anisotropic growth did not occur when spherical CdSe QDs prepared from SA and TOPO and the shell (Cd_0.5Zn_0.5S) coating carried out using SA and TOA. To indicate the shell depositing process, CdSe NRs fabricated using TDPA and TOPO were coated with a CdTe shell. CdTe monomers were deposited on the middle and tip parts of the CdSe NRs to form a tetrapod-like morphology at 220 °C. This is ascribed to the large difference of structure of CdSe (hexagonal) and CdTe (zinc blende).     

Silver-induced activation for improving the electrical characteristics of GaN-based vertical light-emitting diodes

Silver (Ag) contacts are important reflectors for vertical-structure GaN-based light-emitting diodes (LEDs). The Ag contacts produce good electrical and optical properties at different annealing temperatures. Thus, in order to best optimize the reliability of LEDs, we introduced an Ag activation process before performing normal annealing treatments. In other words, after removing 200-nm-thick Ag layers on p-GaN that were annealed at 500 °C for 1 min, Ag films were deposited on the Ag-activated p-GaN, which were subsequently annealed at 300 °C for 1 min. The activated LEDs fabricated with the 300 °C-annealed Ag contacts reveal better electrical properties than the reference LEDs. For example, the activated LEDs give a forward voltage of 2.92 V at an injection current of 20 mA, whereas the reference LEDs with the 300- and 500 °C-annealed Ag contacts yield 3.02 and 2.98 V at 20 mA, respectively. The activated LEDs yield 4.9% and 17% higher output power (at 30 mW) than the reference LEDs with the Ag contacts annealed at 300 and 500 °C. The activation-induced electrical improvement is briefly described and discussed.     

Effects of thermally induced anatase-to-rutile phase transition in MOCVD-grown TiO2 films on structural and optical properties

Titanium dioxide (TiO₂) films with a thickness of 550 nm were deposited on quartz glass at 300 °C by metalorganic chemical vapor deposition. The effects of post-annealing between 600 °C and 1000 °C were investigated on the structural and optical properties of the films. X-ray diffraction patterns revealed that the anatase phase of as-grown TiO₂ films began to be transformed into rutile at the annealing temperature of 900 °C. The TiO₂ films were entirely changed to the rutile phase at 1000 °C. From scanning electron spectroscopy and atomic force microscopy images, it was confirmed that the microstructure of as-deposited films changed from narrow columnar grains into wide columnar ones. The surface composition of the TiO₂ films, which was analyzed by X-ray photoelectron spectroscopy data, was nearly constant although the films were annealed at different temperatures. When the annealing temperature increased, the transmittance of the films decreased, whereas the refractive index and the extinction coefficient calculated by the envelope method increased at high temperature. The values of optical band gap decreased from 3.5 eV to 3.25 eV at 900 °C. This abrupt decrease was consistent with the anatase-to-rutile phase transition. Received: 4 October 2000 / Accepted: 4 December 2000 / Published online: 23 May 2001     

Highly frequency-, temperature-, and bias-stable dielectric properties of 500 °C processed Bi2SiO5 thin films with low dielectric loss

Excellent dielectric frequency, bias, and temperature stability of bismuth silicate (Bi₂SiO₅, BSO) thin films with a low dielectric loss has been obtained in this study. The thin films were prepared on Pt/Ti/SiO₂/Si substrates by a chemical solution deposition method at a relatively low annealing temperature of 500 °C. The BSO films have a preferred growth along (200) orientation with dense fine-grained surface morphology. The dielectric constant and dielectric loss of the thin film annealed at 500 °C are 57 and 0.01, respectively, at 100 kHz, with little change between 1 kHz and 100 kHz and in the bias electric field range between −250 kV/cm and 250 kV/cm, indicating that the thin film exhibits a low dielectric loss as well as excellent frequency and bias field stability. The dielectric-temperature measurements confirmed that the BSO thin film annealed at 500 °C also has good temperature stability between 150 K and 450 K. Our results suggest that the BSO thin films have potential applications in the next-generation integrated capacitors.     

Band gap tunable and improved microstructure characteristics of Cu2ZnSn(S1−x,Sex)4 thin films by annealing under atmosphere containing S and Se

Cu₂ZnSn(S_xS_1?x)₄ (CZTSSe) thin films were prepared by annealing a stacked precursor prepared on Mo coated glass substrates by the sputtering technique. The stacked precursor thin films were prepared from Cu, SnS₂, and ZnS targets at room temperature with stacking orders of Cu/SnS₂/ZnS. The stacked precursor thin films were annealed using a tubular two zone furnace system under a mixed N₂ (95%) + H₂S (5%) + Se vaporization atmosphere at 580 °C for 2 h. The effects of different Se vaporization temperature from 250 °C to 500 °C on the structural, morphological, chemical, and optical properties of the CZTSSe thin films were investigated. X-ray diffraction patterns, Raman spectroscopy, and X-ray photoelectron spectroscopy results showed that the annealed thin films had a single kesterite crystal structure without a secondary phase. The 2θ angle position for the peaks from the (112) plane in the annealed thin films decreased with increasing Se vaporization temperature. Energy dispersive X-ray results showed that the presence of Se in annealed thin films increased from 0 at% to 42.7 at% with increasing Se vaporization temperatures. UV–VIS spectroscopy results showed that the absorption coefficient of all the annealed thin films was over 10⁴ cm^?1 and that the optical band gap energy decreased from 1.5 eV to 1.05 eV with increasing Se vaporization temperature.     

Growth of nanocrystalline TiO2 films by pulsed-laser-induced liquid-deposition method and preliminary applications for dye-sensitized solar cells

A novel technique, the pulsed-laser-induced liquid-deposition (PLLD) method, has been employed to grow nanocrystalline TiO₂ films on fluorine-doped tin-oxide-coated (FTO) glass substrates at room temperature. The PLLD method was implemented by directing a pulsed laser into a liquid precursor and depositing the photosynthesized nanocrystalline TiO₂ on an FTO glass substrate immersed in the liquid precursor. The as-grown nanocrystalline TiO₂ films were found to have a rutile crystal structure and consist of a number of flower-like TiO₂ crystal units arrayed together on the FTO glass substrate. Each of the flower-like TiO₂ crystal units was composed of many nanostructured TiO₂ whiskers, and their building blocks were found to be bundles of TiO₂ nanorods with diameter of about 5 nm. The growth of these TiO₂ nanorods is highly anisotropic, with the preferential growth direction along [001]. As-grown nanocrystalline TiO₂ films were annealed at 450°C in air for 30 min for the applications of dye-sensitized solar cells, and the nanostructured characteristics with good porosity were preserved after annealing. A preliminary dye-sensitized solar cell was built based on the annealed nanocrystalline TiO₂ film. The results suggest that the PLLD method is a promising technique for growing nanocrystalline TiO₂ films for photovoltaic applications.     

Assembly,characterization, and photocatalytic activities of TiO<Subscript>2</Subscript> nanotubes/CdS quantum dots nanocomposites

The semiconductor quantum dots (QDs) can be very efficient to tune the response of photocatalyst of TiO₂ to visible light. In this study, CdS QDs formed in situ with about 8 nm have been successfully deposited onto the surfaces of TiO₂ nanotubes (TNTs) to form TNTs/CdS QDs nanocomposites by use of a simple bifunctional organic linker, thiolactic acid. The diffuse reflectance spectroscopy (DRS) spectra of as prepared samples showed that the absorption edge of the TNTs/CdS composite is extended to visible range, with absorption edge at 530 nm. The photocatalytic activity and stability of TNTs/CdS were also evaluated for the photodegradation of rhodamine B. The results showed that when TNTs/CdS QDs was used, photocatalytic degradation of RhB under visible light irradiation reached 91.6%, higher than 45.4 and 30.5% for P25 and TNTs, respectively. This study indicated that the TNTs/CdS QDs nanocomposites were superior catalysts for photodegradation under visible light irradiation compared with TNTs and P25 samples, which may find wide application as a powerful photocatalyst in environmental field.     

Phase transformation of nanostructured titanium dioxide thin films grown by sol–gel method

Nanostructured TiO₂ thin films were deposited on quartz glass at room temperature by sol–gel dip coating method. The effects of annealing temperature between 200^∘C to 1100^∘C were investigated on the structural, morphological, and optical properties of these films. The X-ray diffraction results showed that nanostructured TiO₂ thin film annealed at between 200^∘C to 600^∘C was amorphous transformed into the anatase phase at 700^∘C, and further into rutile phase at 1000^∘C. The crystallite size of TiO₂ thin films was increased with increasing annealing temperature. From atomic force microscopy images it was confirmed that the microstructure of annealed thin films changed from column to nubbly. Besides, surface roughness of the thin films increases from 1.82 to 5.20 nm, and at the same time, average grain size as well grows up from about 39 to 313 nm with increase of the annealing temperature. The transmittance of the thin films annealed at 1000 and 1100^∘C was reduced significantly in the wavelength range of about 300–700 nm due to the change of crystallite phase. Refractive index and optical high dielectric constant of the n-TiO₂ thin films were increased with increasing annealing temperature, and the film thickness and the optical band gap of nanostructured TiO₂ thin films were decreased.     

Effect of annealing treatment on the uniformity of CeO2/TiO2 bilayer resistive switching memory devices

Bilayer CeO₂/TiO₂ films with high-k dielectric property were prepared by rf magnetron sputtering technique at room temperature. Effect of annealing treatment on resistive switching (RS) properties of bilayer CeO₂/TiO₂ films in O₂ ambient at different temperature in the range of 350–550 °C was investigated. Our results revealed that the bilayer films had good interfacial property at 500 °C and this annealing temperature is optimum for different RS characteristics. Results showed that bilayer CeO₂/TiO₂ film perform better uniformity and reliability in resistive switching at intermediate temperature (i.e. 450 °C and 500 °C) instead of low and high annealing temperature (i.e. 350 °C and 550 °C) at which it exhibits poor crystalline structure with more amorphous background. Less Gibbs free energy of TiO₂ as compared to CeO₂ results in an easier re-oxidation of the filament through the oxygen exchange with TaN electrode. However, the excellent endurance property (>2500 cycles), data retentions (10⁵ s) and good cycle-to-cycle uniformity is observed only in 500 °C annealed devices. The plots of cumulative probability, essential memory parameter, show a good distribution of Set/Reset voltage.