Numerical investigation of heat transport and fluid flow during the seeding process of oxide Czochralski crystal growth Part 2: rotating seed

In this paper, the role of seed rotation on the characteristics of the two‐dimensional temperature and flow field in the oxide Czochralski crystal growth system has been studied numerically for the seeding process. Based on the finite element method, a set of two‐dimensional quasi‐steady state numerical simulations were carried out to analyze the seed‐melt interface shape and heat transfer mechanism in a Czochralski furnace with different seed rotation rates: ω_seed = 5‐30 rpm. The results presented here demonstrate the important role played by the seed rotation for influencing the shape of the seed‐melt interface during the seeding process. The seed‐melt interface shape is quite sensitive to the convective heat transfer in the melt and gaseous domain. When the local flow close to the seed‐melt interface is formed mainly due to the natural convection and the Marangoni effect, the interface becomes convex towards the melt. When the local flow under the seed‐melt interface is of forced convection flow type (seed rotation), the interface becomes more concave towards the melt as the seed rotation rate (ω_seed) is increased. A linear variation of the interface deflection with respect to the seed rotation rate has been found, too. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Control of multi-zone resistive heater in low temperature gradient BGO Czochralski growth with a weighing feedback,based on the global dynamic heat transfer model

The global heat transfer in a crystallization setup has been optimized to develop a strategy of control over a three-zone heater in the BGO Czochralski process, in order to provide invariable thermal conditions near the solid–liquid interface in the stage of a constant-diameter crystal growth. The functional related to the exactness of the heat balance condition at the crystallization front, i.e., the Stefan problem, was chosen as the target function. The optimization yielded unexpected results. The temperature of the lower heater should be lowered, relative to that of the middle heater, with increasing crystal length, whereas the temperature of the upper heater is to be raised. These recommendations were incorporated into a dynamic model of the oxide Czochralski process with a weighing control and into the control loop of the temperature regulators of a crystallization setup. A comparison of results of the time-dependent simulation with the real growth process confirmed that the new control strategy minimizes the deviation of the solid–liquid interface from the prescribed one, significantly decreases variations of interface shape during the process, and enables growth of high-quality crystals.     

Nd:YVO4 crystal growth by Czochralski technique with a submerged plate

This paper is to investigate the growth of Nd:YVO₄ (yttrium vanadate) crystal by the modified Czochralski technique with a submerged plate. Numerical studies are performed to examine melt convection and heat transfer during Nd:YVO₄ growth. The attention is paid to study the effects of initial elevation of the submerged plate, crystal diameter, and melt level on melt inclusions. It is found that the increase in crystal rotation rate and crystal diameter, and the decrease in melt level will increase the axial temperature gradient at the edge and in the center of the crystal, and change the interface shape from convex to flat. The experiments are also carried out to confirm the feasibility of the proposed new technique for controlling melt inclusions in Nd:YVO₄ crystal growth.     

Selection criterion for the growing dendritic tip in a non-isothermal binary system under forced convective flow

A free dendrite growth during solidification into external forced flow is analyzed using a sharp interface model. A criterion for selection of the stable growth mode is derived for the axisymmetric dendrite growing into non-isothermal binary system under convective flow. The criterion obtained rallies analytic results for dendrite growth under forced convection in a pure system [Ph. Bouissou, P. Pelce, Phys. Rev. A 40 (1989) 6673] and dendrite growth in a stagnant binary system [M. Ben Amar, P. Pelce, Phys. Rev. A 39 (1989) 4263].     

The role of inner and internal radiation on the melt growth of sapphire crystal

In this paper, for an inductively heated Czochralski furnace used to grow sapphire single crystal, influence of the inner (wall‐to‐wall) and crystal internal (bulk) radiation on the characteristics of the growth process such as temperature and flow fields, structure of heat transfer and crystal‐melt interface has been studied numerically using the 2D quasi‐steady state finite element method. The obtained results of global analysis demonstrate a strong dependence of thermal field, heat transport structure and crystal‐melt interface on both types of radiative heat transfer within the growth furnace.     

Numerical study to investigate the effect of partition block and ambient air temperature on interfacial heat transfer in liquid bridges of high Prandtl number fluid

Surface heat transfer at the liquid–air interface in liquid bridges of high Prandtl number fluid is known to affect the transitional characteristics appreciably. The heat transfer characteristics under microgravity conditions become much different from those of normal gravity mainly due to the absence of natural convection. The present study deals with numerical computations of flow and heat transfer characteristics in the liquid and surrounding air and also at the liquid–air interface of thermocapillary flow in liquid bridges of high Prandtl number fluid. The governing equations are solved in the coupled domain of the liquid bridge and the surrounding air with the help of available commercial CFD software. The results obtained for a range of Marangoni numbers indicate that by placing a partition block in the air region under normal gravity conditions, the surface heat transfer characteristics of microgravity conditions could be effectively mimicked. The effect of ambient temperature on the surface heat transfer has also been investigated and it has been found that the behavior of heat transfer at the interface changes from heat loss to heat gain when the ambient temperature is increased. Moreover, the presence of partition block under normal gravity suppresses surface heat loss as well as surface heat gain similar to microgravity conditions. Streamlines and temperature contours have been presented for various conditions in order to clarify the underlying physics more meaningfully. The computed profiles for velocity and temperature at the liquid–air interface have been validated against established experimental results.     

Growth of SiGe bulk crystals with uniform composition by utilizing feedback control system of the crystal–melt interface position for precise control of the growth temperature

We developed an automatic feedback control system of the crystal–melt interface position to keep the temperature at the interface constant during growth, and demonstrate its successful application to grow Ge-rich SiGe bulk crystals with uniform composition. In this system, the position of the crystal–melt interface was automatically detected by analyzing the images captured using in situ monitoring system based on charge-coupled-devices camera, and the pulling rate of the crucible was corrected at every 1 min. The system was found to be effective to keep the crystal–melt interface position during growth even when the variation of the growth rate is quite large. Especially, the interface position was kept for 470 h during growth of Ge-rich SiGe bulk crystal when we started with a long growth melt of 80 mm. As a result, a 23 mm-long Si_0.22Ge_0.78 bulk crystal with uniform composition was obtained thanks to the constancy of the growth temperature during growth through the control of the interface position. Our technique opens a possibility to put multicomponent bulk crystal in a practical use.     

Pattern formation mechanism of a periodically faceted interface during crystallization ofSi

We investigated the pattern formation mechanism of a periodically faceted crystal–melt interface during the crystallization of Si by in situ observation. It was directly proved that spacing between the reentrants of adjacent zigzag facets increases with the unification of adjacent facets when a facet with a higher growth velocity catches up with the one with a lower growth velocity. The spacing becomes stable after unification, and the stable spacing was found to increase with increase in growth velocity. The experimental results was discussed by taking the negative temperature gradient in front of the growth interface into account.     

Simulation of temperature and flow fields in an inductively heated melt growth system

The goal of the research presented here is to apply a global analysis of an inductively heated Czochralski furnace for a real sapphire crystal growth system and predict the characteristics of the temperature and flow fields in the system. To do it, for the beginning stage of a sapphire growth process, influence of melt and gas convection combined with radiative heat transfer on the temperature field of the system and the crystal‐melt interface have been studied numerically using the steady state two‐dimensional finite element method. For radiative heat transfer, internal radiation through the grown crystal and surface to surface radiation for the exposed surfaces have been taken into account. The numerical results demonstrate that there are a powerful vortex which arises from the natural convection in the melt and a strong and large vortex that flows upwards along the afterheater side wall and downwards along the seed and crystal sides in the gas part. In addition, a wavy shape has been observed for the crystal‐melt interface with a deflection towards the melt. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Experimental and numerical investigation of buoyancy driven convection during PDAMNA thin film growth

This paper presents results from numerical simulations as well as laboratory experiments of buoyancy driven convection in an ampoule under varying heating and gravitational acceleration loadings. The modeling effort in this work resolves the large scale natural convective motion that occurs in the fluid during photodeposition of polydiacetelene films which is due to energy absorbed by the growth solution from a UV source. Consequently, the growth kinetics of the film are ignored in the model discussed here, and also a much simplified ampoule geometry is considered. The objective of this work is to validate the numerical prediction on the strength and structure of buoyancy driven convection that could occur under terrestrial conditions during nonlinear optical film growth. The validation is used to enable a reliable predictive capability on the nature and strength of the convective motion under low gravity conditions. The ampoule geometry is in the form of a parallelepiped with rectangular faces. The numerical results obtained from the solution to the Boussinesq equations show that natural convection will occur regardless of the orientation of the UV source with respect to the gravity vector. The least strong convective motion occurred with the UV beam directed at the top face of the parallelepiped. The strength of the convective motion was found to be almost linearly proportional to the total power of the UV source. Also, it was found that the strength of the convective motion decreased linearly with the gravity due to acceleration. The pattern of the convection flow on the other hand, depended on the source location.     

Vertical optical floating zone furnace: Principles of irradiation profile formation

The light distribution within the vertical double-ellipsoid mirror furnace applied for floating zone crystal growth with optical heating is studied. During the last few years, this setup was intensively applied for crystal growth of intermetallic and oxide materials due to its advantages for radiation focussing, which is superior in some key features compared to other commercial horizontal and vertical optical floating zone facilities. A point source model was used as a light source to reveal basic principles of the irradiation profile formation, which can strongly affect the melt flows, as well as the curvature and stability of crystallization front. Effects of the lamp displacement along the vertical optical axis with respect to the focal point of the lower elliptical mirror and the effect of mirror apertures were studied as the prime factors, which determine the light profile on the crystal. The efficiency of the light focusing in the presented optical configuration is discussed.     

Clathrate-hydrate film growth along water/hydrate-former phase boundaries—numerical heat-transfer study

This paper describes two analytic models for the heat-transfer-controlled lateral growth of a clathrate-hydrate film along a planar interface between liquid water and an immiscible hydrate-forming fluid (or guest fluid), such as methane or carbon dioxide. The two models are different from each other only regarding the assumption of the film-front geometry. Either model assumes the film to be uniform and constant in thickness, ignoring possible changes in the thickness on a time scale relevant to its lateral growth. Another fundamental assumption employed in the model is that the film's hydrate-forming front is maintained at the hydrate/guest/water three-phase equilibrium temperature, thereby forming a two-dimensional temperature distribution in the surrounding three-phase space. Based on these assumptions, the transient, two-dimensional conductive heat transfer from the film front into the three phases is formulated and numerically solved to give the instantaneous rate of lateral film growth (i.e., the linear speed of the film-front) along the water/guest-fluid interface, while the film thickness is arbitrarily assumed as a fitting parameter. By comparing the predicted rates of film growth with the corresponding experimental data obtained with methane or carbon dioxide as the guest fluid, we estimated the film thickness to be about 10–20 μm for the methane hydrate at a pressure of 9.06 MPa and about 0.5 μm for the carbon-dioxide hydrate at a pressure of 5 MPa.     

Influence of internal radiation on the heat transfer during growth of YAG single crystals by the Czochralski method

Heat and mass transfer taking place during growth of Y₃Al₅O₁₂ (YAG) crystals by the Czochralski method, including inner radiation, is analyzed numerically using a Finite Element Method. For inner radiative heat transfer through the crystal the band approximation model and real transmission characteristics, measured from obtained crystals, are used. The results reveal significant differences in temperature and melt flow for YAG crystals doped with different dopands influencing the optical properties of the crystals. When radiative heat transport through the crystal is taken into account the melt‐crystal interface shape is different from that when the radiative transport is not included. Its deflection remains constant over a wide range of crystal rotation rates until it finally rapidly changes in a narrow range of rotation rates. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The numerical simulation of heat and mass transfer during growth of a binary system by the travelling heater method

The influence of convection and heat and mass transfer on the shape and position of melt/solid interfaces and on radial composition segregation is analysed numerically for the travelling heater method growth of a binary alloy in a vertical transparent ampoule. Results are presented for crystal and melt with thermophysical properties similar to Cd_xHg_1−xTe with the assumption that the pseudobinary CdTe-HgTe phase diagram is true. The two-dimensional axisymmetric heat transfer equation, hydrodynamical equation and convective diffusion equation are included in the mathematical model. The rates of crystal growth and dissolution are supposed to be proportional to the compositional supercooling in the melt near the interfaces. It is shown for the conditions when convection is absent that the interfaces are asymmetrically positioned respectively to the heater centre line. Intensive convection makes their position more symmetrical but the length of the liquid zone greater. The flow pattern in the melt appears to be greatly influenced by solutal gravitational convection. The nonlinear dependence of the melt density on the temperature and composition are used in the model. The cases when speed of the heater is antiparallel (stable density stratification) or parallel (unstable stratification) to the vector of gravitational acceleration are considered.     

Directional Solidification and Melting of Eutectic GaIn

Eutectic gallium-indium is studied in a horizontal Bridgman furnace geometry. Differential temperature gradients are applied to solidify and melt the alloy while observing in-situ the interface morphology and the chemical segregation in the melt and in the solid as well. Upon cooling, a wedge-type indium-rich mushy zone develops at the cold wall. The melt is initially stirred by convective flow. After solidification starts the roll cell recedes to be replaced by a chemically layered conductive melt that eventually solidifies with rather uniform eutectic structure. Upon re-melting, the morphology of the interface adopts a profile that is predetermined by the original solid structure. Those patterns, as well as the flow, are different from single element solid melting experiments and have yet to be modeled. Under high thermal gradient the convective flow mixes the binary melt and the visualized density pattern eventually becomes that of a homogeneous melt.     

The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

The impact of two technological parameters, i.e., the growth temperature and the interface growth interruption, on the crystal quality of strained InGaAs/GaAs quantum well (QW) structures was studied. The investigated heterostructures were grown by molecular beam epitaxy (MBE) and metalorganic chemical vapour deposition (MOCVD) under As-rich conditions. Photoluminescence (PL), reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) were adopted for the evaluation of specified interfaces smoothness and the quality of layers. Comparison between both epitaxial techniques allowed us to find, that the growth temperature plays more significant role in the case of structures grown by MBE technique, whereas the quality of MOCVD grown structures is more sensitive to the growth interruption. Optimum values of the investigated parameters of QW crystallization were obtained for both growth techniques.     

Heat transfer and convection in Czochralski growth of large BGO Crystals

In the present work, numerical modeling has been performed to analyze heat transfer and melt convection during bismuth germanate Bi₄Ge₃O₁₂ (BGO) crystal growth by the Czochralski growth method. In addition to global heat-transfer modeling, the suggested model accounts for the radiative heat exchange in the crystal and melt convection together with the crystallization front formation. The model helped to analyze the modification of the growth setup made by including additional heater. The numerical predictions obtained with CGSim software agree well with available experimental data.     

Instability of the melt flow in VGF growth with a traveling magnetic field

The linear instability of a thermally stratified melt flow in the VGF configuration driven by a traveling magnetic field (TMF) is considered numerically and experimentally. The dependency of the instability threshold on the governing parameters is found for several cuts through the parameter space covering a wide range of possible applications. In a first approximation the linear instability occurs when the dimensionless TMF forcing parameter reaches the magnitude of the Grashof number. This is particularly true in a medium-sized crucible where the first instability is axisymmetric and sub-critical. As the Grashof number increases the flow develops self-similar boundary layers and the instability becomes three-dimensional. The instability originates in the bottom boundary layer where the convection tends to suppress the imposed temperature gradient in the central part of the melt zone. It is shown that the TMF may serve as a tool to control the phase interface shape without causing flow instationarity when the crucible diameter exceeds a certain value. This value is estimated to be around 6 cm for GaAs. The flow stays stable if the TMF is used for a reversal of the meridional flow with the aim to remove a possible dopant concentration peak on the axis.     

Movable partition designed for the seed‐assisted silicon ingot casting in directional solidification process

For the seed‐assisted casting process for silicon ingots, different partition blocks were designed in the directional solidification (DS) furnaces to preserve the seed crystals and optimize the thermal field in the hot‐zone. A transient global model was established to investigate the effects of different partition blocks during the solidification process. The simulation results showed that the partition blocks can significantly influence the temperature distributions and the melt flow fields. From the designed partition blocks, the movable partition block was more favorable for the seed‐assisted DS process. A suitable temperature gradient and a flat seed‐melt (s‐m) interface were obtained, which facilitated the preservation of seed crystals effectively, and an optimized crystal‐melt (c‐m) interface was achieved as well. One of the designs of the movable partition blocks was implemented in quasi‐mono crystalline silicon casting experiments and it has been confirmed that the designed movable partition block was helpful for the improvement of the single crystal area.     

On favorable thermal fields for detached Bridgman growth

The thermal fields of two Bridgman-like configurations, representative of real systems used in prior experiments for the detached growth of CdTe and Ge crystals, are studied. These detailed heat transfer computations are performed using the CrysMAS code and expand upon our previous analysis [C. Stelian, A. Yeckel, J.J. Derby, Influence of thermal phenomena on crystal reattachment during the dewetted Bridgman growth, J. Cryst. Growth, in press] that posited a new mechanism involving the thermal field and meniscus position to explain stable conditions for dewetted Bridgman growth. Computational results indicate that heat transfer conditions that led to successful detached growth in both of these systems are in accordance with our prior assertion, namely that the prevention of crystal reattachment to the crucible wall requires the avoidance of any undercooling of the melt meniscus during the growth run. Significantly, relatively simple process modifications that promote favorable thermal conditions for detached growth may overcome detrimental factors associated with meniscus shape and crucible wetting. Thus, these ideas may be important to advance the practice of detached growth for many materials.