Anderson localization and superconducting transition temperature in two-dimensional systems

Effects of the Anderson localization on superconducting transition temperature T_c are examined by calculating a two-electron propagator K rigorously up to 0[(?_Fτ₀)^?1ln(Tτ₀)], where τ₀ is the electron life time due to impurity scattering and ?_F the Fermi energy. The results show that in K the pair-breaking terms cancel out among themselves exactly and the remaining terms which contribute to the correction to the density of states and to the renormalization of electron-electron interaction by impurity scattering lead to the changes in T_c of 0[{ln(Tτ₀)}²] and of 0[{ln(Tτ₀)}³], respectively.     

Structural,magnetic and transport properties of half-metallic ferrimagnet Mn2VGa

Polycrystalline Mn₂VGa samples were synthesized using an arc furnace. X-ray diffraction (XRD) pattern was analyzed using General Structural Analysis System (GSAS) package and the refined lattice parameter was found to be 5.905 Å. We found magnetic ordering in the system below 783 K and the spontaneous magnetization was observed to be following the Bloch T^3/2 law below 80 K. The magnetic moment per formula unit at 5 K was observed to be 1.88 μ_B. The temperature variation of the electrical resistance was found to follow the relation R_n=R_0n+aT^α (α=1.616) and (R_n—normalized electrical resistance) in the temperature range of 25–300 K and we observed almost a temperature independent variation of the electrical resistance below 25 K indicating the absence of spin-flip scattering.     

Electron hopping mechanism in hematite (α-Fe2O3)

The frequency dependence of the real (?′) and imaginary (?″) parts of the dielectric constant of polycrystalline hematite (α-Fe₂O₃) has been investigated in the frequency range 0-100 kHz and the temperature range 190-350 K, in order to reveal experimentally the electron hopping mechanism that takes place during the Morin transition of spin-flip process. The dielectric behaviour is described well by the Debye-type relaxation (α-dispersion) in the temperature regions T<233 K and T>338 K. In the intermediate temperature range 233 K<T<338 K a charge carrier mechanism takes place (electron jump from the O²⁻ ion into one of the magnetic ions Fe³⁺) which gives rise to the low frequency conductivity and to the Ω-dispersion. The temperature dependence of relaxation time (τ) in the −ln τ vs 10³/T plot shows two linear regions. In the first, T<238 K, τ increases with increasing T implying a negative activation energy −0.01 eV, and in the second region T>318 K τ decreases as the temperature increases implying a positive activation energy 0.12 eV. The total reorganization energy (0.12-0.01) 0.11 eV is in agreement with the adiabatic activation energy 0.11 eV given by an ab initio model in the literature. The temperature dependence of the phase shift in the frequencies 1, 5, 10 kHz applied shows clearly an average Morin temperature T_Mo=284±1 K that is higher than the value of 263 K corresponding to a single crystal due to the size and shape of material grains.     

Specific features of anion transfer in HoF<Subscript>3</Subscript> crystals at high temperatures

The anionic conductivity of HoF₃ single crystals with a β-YF₃ structure (orthorhombic crystal system, space group Pnma) is investigated over a wide range of temperatures (323–1073 K). The unit cell parameters of HoF₃ crystals are as follows: a=0.6384±0.0009 nm, b=0.6844±0.0009 nm, and c=0.4356±0.0005 nm. It is revealed that the conductivity anisotropy of the HoF₃ crystals is insignificant over the entire temperature range covered. The crossover from one mechanism of ion transfer to another mechanism is observed near the critical temperature T_c≈620 K. The activation enthalpy of electrical conduction is found to be ΔH₁=0.744 eV at T<T_c and ΔH₂=0.43 eV at T>T_c. The fluorine vacancies are the most probable charge carriers in HoF₃ crystals. The fluorine ionic conductivities at temperatures of 323, 500, and 1073 K are equal to 5×10^?10, 5×10^?6, and 2×10^?3 S cm^?1, respectively.     

Magnetic-field-induced slowing-down of molecular rotation in C<Subscript>60</Subscript> crystals

The molecular dynamics of C₆₀ crystals was studied by inelastic neutron scattering at T=290 K, i.e., above the first-order phase transition temperature (T_C≈260 K), in the region of free C₆₀-spheroid rotation in the lattice. The energy broadening of the original neutron spectrum 2Γ₀≈0.1 meV for a momentum transfer q=2 Å^?1 is in agreement with NMR data on the rotational relaxation time of the molecule τ～10^?11 s～ ?Γ₀. This effect was observed to decrease in magnetic fields H=2.5–4.5 kOe applied along the scattering vector: Γ_H=0.7Γ₀. The slowing-down of the molecular rotation is discussed in connection with the interaction of a magnetic field with the molecular currents, which fluctuate when the C₆₀ cage rotates.     

TSC study of electric dipole relaxations in chlorapatite

Electric dipole relaxations in chlorapatite, Ca₅(PO₄)₃Cl, have been studied with the fractional polarization mode of the thermally stimulated currents (TSC) method. Fifty-one of the fifty-seven sets of data obtained in the range 10–443°K fell naturally into four groups yielding compensation temperatures T_C of T_C1, = 202°C, T_C2: = 202°C, T_C3 = 420°C and T_C4= 644°C, with estimated error < 10°C, and characteristic relaxation times τ_C of τ_C1 = 1.3 × 10^?7s, τ_C2 = 3.2 × 10^?6s, τ_C3 = 8.8 × 10^?5s and τ_C4 = 2.3 × 10^?4s. Atomic-scale physical models involving Cl^? ion motion are offered for the 202°C compensation at the temperature of the reported monoclinic-to-hexagonal phase transition and for the 420°C compensation, at which temperature the Cl^? ions individually are thought to have enough thermal energy to maintain the hexagonal form dynamically.     

Ultrasonic attenuation anomalies at the two transitions in antiferromagnetic FeGe2

The attenuation of longitudinal and shear sound waves is measured through the Néel temperature, T_N≈286 K, and the lower transition temperature, T_K≈265 K, of FeGe₂. Longitudinal sound with wavevector q along the [100] axis of this tetragonal antiferromagnetic metal shows an attenuation peak at T_N, which is reversibly suppressed by compressive uniaxial stress σ along [010]. The estimated pressure dependence of T_N is dT_N/dp=(?2.8±0.3) mK bar^?1. The peak at T_N shows thermal and stress hysteresis, which suggests that it is associated with domain wall motion and that this transition is first order.     

Zum Kondo-Effekt in Zink-Mangan: Der Einfluß der Manganverteilung auf den elektrischen Widerstand im Temperaturbereich bis 0,4 °K

The electrical resistivity of dilute Zn-Mn alloys (c=0–0.6 at% Mn) has been measured in a temperature range from room temperature (RT) down to 0.4 °K. Three different series of samples are investigated: 1. annealed 72 h, 400 °C, 2. annealed and aged 1 year atRT, 3. coldworked atRT. All samples show a minimum in the residual resistance atT _min∝c ^1/5 followed by an increase of the resistivityρ∝k _s · lnT (Kondo-effect). For some alloys the resistivity minimum is followed by a resistivity maximum atT _max.T _max mainly depends on the distribution of the Mnatoms in the Zn-matrix. The coefficientk _s is also strongly influenced by changes of the Mn-distribution. For alloys withc>0.02 at% (max. solubility of Mn in Zn atRT) the slopek _s =?ρ/? lnT decreases with increasing degree of precipitation of the manganese. Samples withc<0.02 at% however, show the opposite effect, increasingk _s with increasing Mn-precipitation. Moreover, during the aging process, we observe an increase in the “residual resistance” (resistance ratioR _T/R ₂₉₃ atT _min) for these alloys. The effect can be explained by assuming that the precipitation leads to the formation of superparamagnetic clusters.     

Relaxation times in dissipative heavy-ion collisions

The classical model introduced earlier for analyzing experimental data on dissipative heavy-ion collisions, is generalized to include effects from the gradual dissipation of radial kinetic energy and from the development of fragment deformations during the collision. Relaxation times for the dissipation of radial kinetic energy (τ _R ) and relative angular momentum (τ _l ) as well as for the development of deformations (τ_α) are fitted to the reaction⁸⁶Kr (8.18 MeV/u) +¹⁶⁶Er and applied to three other reactions. A consistent set of relaxation times isτ _R = 0.3 · 10^?21 s,τ _l =1.5 · 10^?21 s andτ _α = 5 · 10^?21 s. Empirical mass transport coefficients are deduced from comparisons with experimental element distributions. Effects from fluctuations in the deflection function are discussed. Evidence is found for the existence of a relaxation time of the order 10^?21 s in the mass-drift coefficient.     

Anisotropy of the hopping conductivity in TlGaSe2 single crystals

The temperature dependences of the conductivities parallel and perpendicular to the layers in layered TlGaSe₂ single crystals are investigated in the temperature range from 10 K to 293 K. It is shown that hopping conduction with a variable hopping length among localized states near the Fermi level takes place in TlGaSe₂ single crystals in the low-temperature range, both along and across the layers. Hopping conduction along the layers begins to prevail over conduction in an allowed band only at very low temperatures (10–30 K), whereas hopping conduction across the layers is observed at fairly high temperatures (T?210 K) and spans a broader temperature range. The density of states near the Fermi level is determined, N _F=1.3×10¹⁹eV·cm³)^?1, along with the energy scatter of these states J=0.011 eV and the hopping lengths at various temperatures. The hopping length R along the layers of TlGaSe₂ single crystals increases from 130 Å to 170 Å as the temperature is lowered from 30 K to 10 K. The temperature dependence of the degree of anisotropy of the conductivity of TlGaSe₂ single crystals is investigated.     

Dielectric relaxation of KBr doped with KOH and KOD

The complex dielectric constant of KBr single crystals doped with KOH and with KOD has been measured in the temperature range from 0.32°K to 300°K using a small a. c. signal. A relaxation timeτ ₀ was determined by means of Cole-Cole plots. ForT<4°K the temperature dependence ofτ ₀ can be approximated byAT ^?n , wheren is between 1.2 and 1.3 for the dilute samples, and between 0.8 and 1.0 for two samples with large hydroxyl concentrations.n has the same value for OH^? and OD^? dipoles. The constantA roughly doubles upon substitution ofH byD. The relaxation behavior was found to be independent of concentration in the range between 3×10¹⁸ cm^?3 dipoles and 10¹⁹ dipoles cm^?3.     

Spin dynamics and phase transitions in quasi-2D antiferromagnets <Emphasis Type="Italic">R</Emphasis><Subscript>2</Subscript>CuO<Subscript>4</Subscript> (<Emphasis Type="Italic">R</Emphasis>=Pr,Nd, Sm,Eu, Gd)

The spin and lattice dynamics of the R₂CuO₄ quasi-2D antiferromagnetic crystals (R=Pr, Nd, Sm, Eu, Gd) were studied in the millimeter-range electromagnetic wave band. Strong variations of the absorption coefficient were observed to occur at temperatures T≈T₀. Absorption lines of electrical nature due to lattice dynamics were also revealed near the T₀ temperatures. The observed anomalies are assumed to originate from phase transitions at T≈T₀, which entail changes in the structural and magnetic properties.     

Frequency dependent magnetic susceptibility and spin glass freezing inPtMn alloys

We report measurements of the low-field complex magnetic susceptibility on Pt_1?x Mn _x forx=0.01, 0.025 and 0.05 and for frequencies ν between 10 and 4,000 Hz. A strong frequency dependence of the freezing temperatureT _f is observed: ΔT _f /T _f Δ lnv=0.025 (decade ν)^?1 for all three alloys. These results as well as previous other measurements are interpreted in terms of a phenomenological model.     

Temperature dependence of Mn2+ EPR in Sn2P2S6 near the phase transition

The X-band EPR spectrum of Mn²⁺ in Sn₂P₂S₆ was studied in the temperature rangeT=223–363 K. At room temperature the spin-Hamiltonian constants areg=2.00±0.01,B ₂ ⁰ =(163±3)·10^?4 cm^?1,B ₂ ² =(159±3)·10^?4 cm^?1,A=?(75±1)·10^?4 cm^?1. The effect of the invariance in temperature of the resonance magnetic fields in the narrow temperature rangeT=337–340 K and the model of the paramagnetic centre are discussed. According to EPR data a phase transition occurs atT=337 K. This transition from the paraelectric phase to the ferroelectric one is accompanied by a dramatic change in value of the spin-Hamiltonian constantB ₂ ⁰ .     

New results in the study of Brillouin scattering in thiourea

Below T₂ = 202 K, in the incommensurate phase, a Debye relaxation appears for c₃₃; it can be attributed to a linear coupling between an acoustical mode and a phason. The relaxation time is τ = τ₀/(T₀?T) with τ₀ = 6.2 x 10^?12 sec deg and T₀ = 200.9 K. The same phenomenon appears more weakly for c₁₁. The c₆₆ elastic constant has a double discontinuity around T₁ = 169 K; this shows that in the vicinity of T₁ there are two transitions, separated by a temperature interval of 3°.     

Nuclear spin relaxation of Xe in liquid Te

By the method of time differential perturbed angular distribution following a nuclear reaction, the relaxation rateT _r ^?1 of the 8 msI ^π=10⁺ isomer of¹³²Xe has been measured in liquid Te. Between 670 °K (supercooled liquid) and 1,000 °K the rate decreases from about 720/s by about a factor of two. From existing experimental material it is concluded thatT _r ^?1 is mainly due to quadrupolar interaction (T _r ^?1 ≈T _Q ^?1 ). Its magnitude is discussed considering the metallic and the noble gas limit as models for the Xe-Te-interactions. The temperature dependenceT _Q(T) apparently does not correlate with the diffusion constant of Te in contrast to a simplified theoretical treatment. — The nuclearg value of the isomer has been determined to be g=(?)0.195(5) thus confirming the configuration (vh_11/2)².     

Dynamical study of triplet-triplet energy transfer in rigid solution

Triplet-triplet (T-T) energy transfer from acetophenone to naphthalene-d₈ has been studied in EPA rigid-glass solution at 77 K by masuring the decay of donor phosphorescence and the rise of acceptor T-T absorption over a wide range of time. The results were analyzed in terms of the theory proposed by Inokuti and Hirayama on the basis of a point molecular model. Two parameters, R_O and γ, were determined which are involved in their expression for the rate constant of T-T energy transfer, i.e. n(R) = (1/τ_D) exp[γ(1?R/R_O)], where R and τ_D denote the donor-acceptor distance and the lifetime of donor triplet in the absence of acceptor, respectively. It was found that, in contrast to the Inokuti-Hirayama theory in which γ is assumed to have a constant value, γ increases significantly as the time (t) after flash excitation of the donor becomes smaller: γ ≈ 25 for t/τ_D=10^-2?1, ≈ 35 for t/τ_D = 10^-3? 10^-2, and ≈ 45 for t/τ_D = 10^-4?10^-3. This finding suggests that the true rate constant increases with decreasing R value to a greater extent than the n(R) employed by Inokuti and Hirayama.     

Critical behaviour of electrical resistivity in 5 binary liquid systems

For five binary liquid systems CS₂+CH₃CN, CS₂+CH₃NO₂, CS₂+(CH₃CO)₂O, C₆H₁₂+(CH₃CO)₂O, n-C₇H₁₆+(CH₃CO)₂O, the electrical resistance has been measured near the critical solution temperatures. The behaviour is universal. Below T_c, the conductivities of the two phases follow ∣σ₁?σ₂∣～?^β, where ?=∣T?T_c∣T_c with β≈0.35. In the one phase region $\text{d}\text{R}\text{d}\text{T}\text{～?}{}^{\mathrm{-b}}$ with b≈0.35±0.1 and $\text{d}\text{R}\text{d}\text{T}$ is positive in some cases and negative in others.     

Electrical properties of tellurium clusters on the void sublattice of an opal crystal: The important role played by the Te-SiO2 interface

The temperature dependences of electrical resistivity and of the Hall effect of nanocluster tellurium crystals obtained by filling the voids in a dielectric (opal) matrix with a melt of pure and doped Te were studied. The Hall hole concentration p _eff was found to increase anomalously (by more than two orders of magnitude) in a sample prepared from pure Te and cooled to helium temperatures. At T=1.45 K, the hole concentration in this sample was p _eff?6×10¹⁷ cm^?3. At the same time, the Hall effect in this sample was observed to reverse sign at T?200 K from positive for T<200 K to negative at higher temperatures. This implies a low impurity concentration (N _A is less than at least 10¹⁵ cm^?3). A nanocluster crystal of doped Te does not exhibit this anomaly; here, we have p _eff?6×10¹⁷ cm^?3 throughout the temperature region covered, as in the original Te. These features are assigned to the formation of a two-dimensional conducting accumulation layer near the Te-amorphous SiO₂ (the opal material) interface at low temperatures; such a layer determines the low-temperature properties of nanocluster crystals prepared from pure Te. Actually, we obtained a model of a three-dimensional structure formed from a two-dimensional film.