Field-induced valence transition in EuPtP<Subscript>1−x</Subscript>As<Subscript>x</Subscript>

The ternary compound EuPtP exhibits two valence transitions at T ₁ = 235 K and T ₂ = 190 K. In order to examine a field-induced valence transition of Eu, we synthesized EuPtP_1−x As _x compounds with 0.05 ≤ x ≤ 0.5 and studied the magnetic and valence behavior. The substitution of As for P increases the lattice volume linearly and decreases both valence transition temperatures, T ₁ and T ₂, in contrast to the behavior under external pressures. The magnetization process in a pulsed magnetic field revealed that EuPtP_0.5As_0.5 exhibits an onset of metamagnetic transition above 50 T with a large hysteresis, which evidences a first-order field-induced valence transition. The analysis of the magnetization curves of x = 0.5 at various temperatures has demonstrated that the field-induced transition is essentially the same as the transition induced by temperature at T ₁.     

Galvanomagnetic study of the quantum-well valence band of germanium in the Ge<Subscript>1−x</Subscript>Si<Subscript>x</Subscript>/Ge/Ge<Subscript>1−x</Subscript>Si<Subscript>x</Subscript> potential well

The structure of the quantum-well valence band in a Ge(111) two-dimensional layer is calculated by the self-consistent method. It is shown that the effective mass characterizing the motion of holes along the germanium layer is almost one order of magnitude smaller than the mass for the motion of heavy holes along the [111] direction in a bulk material (this mass is responsible for the formation of quantum-well levels). This creates a unique situation in which a large number of subbands appear to be populated at moderate values of the layer thickness d _w and the hole concentration p _s . The depopulation of two or more upper subbands in a 38-nm-thick germanium layer at a hole concentration p _s = 5 × 10¹⁵ m^?2 is revealed from the results of measuring the magnetoresistance in a strong magnetic field aligned parallel to the germanium layers. The destruction of the quantum Hall state at a filling factor ν = 1 indicates that the two lower subbands merge together in a self-formed potential profile of the double quantum well. It is demonstrated that, in a quasi-two-dimensional hole gas, the latter effect should be sensitive to the layer strain.     

Computation of the electronic structure and direct-gap absorption spectra in Ge-rich Si<Subscript>1−x</Subscript> Ge<Subscript>x</Subscript>/Ge/Si<Subscript>1−x</Subscript>Ge<Subscript>x</Subscript> type-I quantum wells

This paper presents the results of conduction band discontinuities calculation for strained/relaxed Si_1?x Ge _x /Si_1?y Ge _y heterointerfaces in Γ _15C , Γ _2′C and L upper bands minima, as well as the room-temperature strained (vs. relaxed) band gaps deduced from the classical model-solid theory. Based upon the obtained data, we propose a type-I W-like Si_1?y Ge _y /Si_1?x Ge _x /Ge/Si_1?x Ge _x /Si_1?y Ge _y quantum wells heterostructure optimized in terms of compositions and thicknesses. Electronic states and wave functions are found by solving Schrödinger equation without and under applied bias voltage. An accurate investigation of the optical properties of this heterostructure is done by calculating the energies of the interband transitions and their oscillator strengths. Moreover, a detailed computation of the bias-voltage evolution of the absorption spectra is presented. These calculations prove the existence of type-I band alignment at Γ _2′C point in compressively strained Ge quantum wells grown on relaxed Ge-rich Si_1?y Ge _y buffers. The strong absorption coefficient (> 8 × 10³ cm^-1) and the large Stark effect (0.1 eV @ 2 V) of the Γ _2′C transitions thresholds open up perspectives for application of these heterostructures for near-infrared optical modulators.     

Nernst effect of stripe ordering La<Subscript>1.8−x</Subscript>Eu<Subscript>0.2</Subscript>Sr<Subscript>x</Subscript>CuO<Subscript>4</Subscript>

We investigate the transport properties of La_1.8−xEu_0.2Sr_xCuO₄ (x = 0.04, 0.08, 0.125, 0.15, 0.2) with a special focus on the Nernst effect in the normal state. Various anomalous features are present in the data. For x = 0.125 and 0.15 a kink-like anomaly is present in the vicinity of the onset of charge stripe order in the LTT phase, suggestive of enhanced positive quasiparticle Nernst response in the stripe ordered phase. At higher temperature, all doping levels except x = 0.2 exhibit a further kink anomaly in the LTO phase which cannot unambiguously be related to stripe order. Moreover, a direct comparison between the Nernst coefficients of stripe ordering La_1.8−xEu_0.2Sr_xCuO₄ and superconducting La_2−xSr_xCuO₄ at the doping levels x = 0.125 and x = 0.15 reveals only weak differences. Our findings make high demands on any scenario interpreting the Nernst response in hole-doped cuprates.     

Rotatable anisotropy of epitaxial Fe<Subscript>1−x</Subscript>Ga<Subscript>x</Subscript> thin films

We show by a combined magnetic force microscopy and synchrotron radiation spectroscopy study that stripe-like patterned magnetic domains are present in Fe_1?x Ga _x thin films. These stripes, whose origin is attributed to an out-of-plane magnetic component, can be rotated by an external magnetic field.     

Microwave characterization of Pb<Subscript>1−x</Subscript>Ca<Subscript>x</Subscript>Fe<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>O<Subscript>3</Subscript> multiferroics at X-band

The microwave characteristics of Pb_1?x Ca _x Fe_0.5Nb_0.5O₃ multiferroics (x = 0.0, 0.4, 0.45, 0.5, 0.55, 0.6), have been investigated as a function of frequency and substitution. The results depict ?13.99 dB reflection loss at 11.65 GHz in composition x = 0.6. Microwave absorption is enhanced with substitution of Ca²⁺ ions and undoped composition 0.0 behaves as electromagnetic shield. The model governing microwave absorption is discussed and different compositions for electromagnetic applications have been suggested.     

Spin-polarized first-principles study of ferromagnetism in zinc-blende In<Subscript>1−x</Subscript>Mn<Subscript>x</Subscript>Sb

First-principles calculations based on the density functional theory are performed to study the structural properties, spin-polarized electronic band structures, density of states and magnetic properties of the zinc blende In_{1− x} Mn _x Sb (x = 0.125, 0.25, 0.50, 0.75, 1.0). The calculated lattice constants of In_{1− x} Mn _x Sb obey the Vegard’s law with a marginal upward bowing. With the increase of Mn concentration in In_{1− x} Mn _x Sb, a transition from the semi-metallic to the half-metallic behavior happens such that the majority-spin valence states crosses the Fermi level and the minority-spin states have a gap at the Fermi level. A large exchange splitting (∼ 4 eV) is observed between Mn 3d states of the majority-spins and the minority-spins. The total magnetic moment of In_{1− x} Mn _x Sb half-metallic ferromagnets per Mn atom basis is 4μ _B. The total magnetic moment per Mn atom indicate that Mn atoms act as acceptors in InSb and contribute to holes in the lattice of InSb. Due to p-d hybridization, the free space charge of Mn reduces that results a loss in its magnetic moment. The loss in the magnetic moment of the Mn atoms is converted into a small local magnetic moments on the In and Sb sites.     

Magnetocaloric properties of manganites La<Subscript>1−x</Subscript>(Ag,K)<Subscript>x</Subscript>MnO<Subscript>3</Subscript>

The temperature and magnetic-field dependences of the magnetocaloric effect in manganites La_1−x Ag _x MnO₃ (x = 0.1; 0.15; 0.2) and La_1−x K _x MnO₃ (x = 0.1; 0.11; 0.13; 0.15; 0.175) were studied by a direct method. Large changes in the sample temperature were detected as a magnetic field changed by ΔH = 10 kOe. Temperatures of the magnetocaloric effect maxima are near room temperatures. Field dependences of the magnetocaloric effect show no signs of saturation in fields to 30 kOe.     

Correlation between raman spectra and structural properties of Zn<Subscript>2 − 2<Emphasis Type="Italic">x</Emphasis></Subscript>Cu<Subscript>x</Subscript>In<Subscript>x</Subscript>Se<Subscript>2</Subscript> films

The Raman spectra of Zn_{2 ? 2x} Cu_xIn_xSe₂ (ZCIS) semiconductor films designed for use as optically active layers in thin-film solar cells have been investigated. The Raman spectra of ZCIS films are characterized by the presence of the dominant mode A ₁, which is observed in A^IB^IIIC ₂ ^VI compounds with chalcopyrite structure. The spectra of CuInSe₂ films (x = 1) obtained at low temperatures (T ≤ 400°C) contain and additional mode at 258 cm^?1, which is due to the presence of the impurity Cu_xSe phase. All modes observed in the spectra of ZCIS films with a Zn concentration ≤20 at % obtained under optimal conditions (520–540°C) correspond to the symmetry of vibrations in the chalcopyrite structure. The broadening and blue shift of the A ₁ mode occurring with an increase in the Zn concentration are indicative of degradation of the chalcopyrite crystal structure and the chalcopyrite → sphalerite phase transition at Zn concentrations exceeding 20 at %.     

Synthesis of compositionally controllable Cu<Subscript>2</Subscript>(Sn<Subscript>1−x</Subscript>Ge<Subscript>x</Subscript>)S<Subscript>3</Subscript> nanocrystals with tunable band gaps

In this work, we show that compositionally controlled Cu₂(Sn_1–xGe_x)S₃ nanocrystals can be successfully synthesized by the hot-injection method through careful tuning the Ge/(Sn+Ge) precursor ratio. The band gaps of the resultant nanocrystals are demonstrated to be linearly tuned from 1.45 to 2.33 eV by adjusting the composition parameter x of the Ge/(Sn+Ge) ratio from 0.0 to 1.0. The crystalline structures of the resultant NCs have been studied by the X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), select area electron diffraction (SAED), and Raman spectroscopy. A ligand exchange procedure is further performed to replace the native ligands on the surface of the NCs with sulfur ions. The photoresponsive behavior indicates the potential use of as-prepared Cu₂(Sn_1–xGe_x)S₃ nanocrystals in solar energy conversion systems. The synthesis of compositionally controlled Cu₂(Sn_1–xGe_x)S₃ nanocrystals reported herein provides a way for probing the effect of Ge inclusion in the Cu-Sn-S system thin films.     

Dynamic magnetic susceptibility of compounds in Gd<Subscript>5</Subscript>Si<Subscript>2−x</Subscript>Ge<Subscript>2−x</Subscript>Sn<Subscript>2x</Subscript> (2x = 0 − 0.1) system

The dynamic magnetic susceptibility (χ_ac) of magnetically ordered Gd₅Si_2?xGe_2?xSn_2x compounds with the partial substitution for silicon and germanium atoms by isovalent tin atoms (2x = 0 ? 0.1) has been investigated experimentally. From the temperature dependence of χ_ac the Curie temperatures of these alloys are determined. It is established that tin-doped alloys have higher Curie temperatures as compared to Gd₅Si₂Ge₂ (ΔT _C ≈ 15 K).     

Multivariate pressure effects on an electron hopping process in ferroelectric KTa<Subscript>1−x</Subscript>Nb<Subscript>x</Subscript>O<Subscript>3</Subscript>

The effect induced by the presence of a polaron related relaxation process on the dielectric properties of a ferroelectric KTa_1?x Nb _x O₃ (KTN) crystal was investigated (10^-2?10⁶ Hz, at 300?375 K) using broadband dielectric spectroscopy. Characterization of the process using just the standard frequency domain dielectric parameters can nonetheless provide penetrating insight into its nature and origins. The three parameters, namely: relaxation time (τ), Cole-Cole loss broadening (α), and dielectric strength (Δ?) provide each one in its own way, much useful and often overlooked information. The Activation Energy along with the Meyer-Neldel dependance, both extracted from τ serve to illuminate the dynamic properties. At the same time, α and especially the combined α(lnτ) relationship, expose the fractal structure of the underlying landscape. Finally, the static parameter Δ?, enables quantification of the dipolar correlations. Hydrostatic pressure (up to 7.5 kbar) was applied to gently perturb the system and observe the outcome on all of the various parameters. This additional degree of freedom allows for a much more comprehensive exploration of the phase space behavior of the system.     

AC and DC properties of M-type SrCo<Subscript>x</Subscript>Ti<Subscript>x</Subscript>Fe<Subscript>(12−2x)</Subscript>O<Subscript>19</Subscript> hexagonal ferrite

Microwave characterization of SrCo _x Ti _x Fe_(12?2x)O₁₉ (x = 0.0, 0.2, 0.3, 0.5, 0.6, 0.7, 1.0) ferrites has been studied as a function of frequency, substitution and thickness, and static electrical current density-electric field characteristics have been investigated as a function of substitution. Microwave characteristics have been measured using power meter in the rectangular slotted waveguide and current density is measured using electrometer. The microwave absorption is evaluated using the standard available model. The results depict ?11.57 dB reflection loss at 10.38 GHz in composition x = 0.6. The electrical current density decreases at lower substitution and increases at higher substitution. The substitution of Co²⁺ and Ti⁴⁺ ions causes enhancement of electromagnetic and static electrical properties.     

Influence of Zn/Co ratio on dielectric behavior of Na<Subscript>2</Subscript>Zn<Subscript>1 ‐ x</Subscript>Co<Subscript>x</Subscript>P<Subscript>2</Subscript>O<Subscript>7</Subscript> glasses

A series of zinc phosphate glass doped with cobalt Na₂Zn_(1???x)Co_xP₂O₇ (x = 0, 1, 2 and 5 mol%) was synthesized. These glasses were characterized by both infrared and large broadband dielectric spectroscopy. Infrared spectra indicate the increase of Zn/Co ratio creates defect in phosphate network due to the depolymeration of phosphate anions. The dc conductivity increases and activation energy decreases with the amount of cobalt ions in the glass network. The impedance measurements reveal that the total conductivity follows Jonscher’s power law. The dielectric constant and dielectric loss increased with the temperature and decreased with the frequency whatever the cobalt proportion.     

First principles study on electronic and optical properties of Al<Subscript>x</Subscript>Ga<Subscript>1−x</Subscript>N and In<Subscript>y</Subscript>Ga<Subscript>1−y</Subscript>N

The band structure, density of states of Al_xGa_1?xN and In_yGa_1?yN was performed by the first-principles method within the local density approximation. The calculated energy gaps of the AlN, Al_0.5Ga_0.5N, GaN, In_0.5Ga_0.5N and InN were 5.48, 4.23, 3.137, 1.274 and 0.504 eV, which were in agreement with the experimental result. The dielectric functions, absorption coefficient and loss function were calculated based on Kramers–Kronig relations. Further more, the relationships between electronic structure and optical properties were investigated theoretically. For Al_xGa_1?xN and In_yGa_1?yN materials, the micromechanism of the optical properties were explained.     

Resonant Raman scattering in superconducting Ba<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>K<Subscript>x</Subscript>BiO<Subscript>3</Subscript>

The effect of the photon energy of the exciting laser radiation on the Raman spectra of Ba_1?xK_xBiO₃ with x=0.25, 0.40, and 0.50 is studied. An increase in the laser wavelength from 488 to 750 nm scarcely affects the amplitudes and frequencies of the spectral lines in the Raman spectra of the nonsuperconducting compound with x=0.25. For the optimally doped (x=0.40) and overdoped (x=0.50) superconducting compounds, a substantial increase in the line intensity and a considerable shift of the characteristic frequencies are observed. This result suggests that, in the whole range of superconducting compositions 0.37≤x≤0.50, the local symmetry of the Ba_1?xK_xBiO₃ crystal lattice differs from the perfect cubic symmetry, which should take place according to the literature data. The fact that resonance phenomena are observed when the laser photon energy is shifted toward the optical gap testifies to the presence of local electron pairs in the whole range of superconducting compositions 0.37≤x≤0.50 and is evidence in favor of the superconductivity mechanism proposed for Ba_1?xK_xBiO₃ on the basis of the X-ray absorption studies in our previous paper.     

Hall effect in La<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Sr<Subscript>x</Subscript>MnO<Subscript>3</Subscript> crystals

A study of the temperature dependences of the ordinary and anomalous Hall coefficients and of the Hall mobility of carriers in single crystals of the ferromagnetic manganites La_1?xSr_xMnO₃ (x=0.15, 0.20, 0.25) was carried out in the temperature interval from 85 to 400 K. The nature of the carriers and the conduction mechanisms in these compounds are discussed.     

Orbital phase transition in Pr<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ca<Subscript>x</Subscript>MnO<Subscript>3</Subscript>

The phenomenological theory of phase transition in Pr_0.6 Ca_0.4 MnO₃ manganite is developed. It is shown that this is the orbital phase transition and that the two electronic states of the manganese ion, which are discussed in the literature, result from two different types of condensation of the same orbital order parameter. Thus, the manganese ions in Pr_1?xCa_x MnO₃ manganites with 0.3≤_x≤0.5 may be in either of the two electronic states, depending on the thermodynamic parameters.     

Lithium conductivity and lithium diffusion in NASICON-type Li<Subscript>1+x</Subscript>Ti<Subscript>2–x</Subscript>Al<Subscript>x</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript> (x= 0; 0.3) prepared by mechanical activation

LiTi₂(PO₄)₃ (LTP) and Li_1.3Al_0.3Ti_1.7(PO₄)₃ (LATP) (S. g. R-3c) have been prepared using conventional ceramic and mechanical activation (MA) methods. It has been shown that preliminary mechanical activation of initial mixtures leads to different nature and amount of dielectric admixtures in the final product after heat treatment at 800–1000 °C as compared with ceramic method. Transport properties of as prepared materials have been studied by lithium ionic conductivity at d.c. and a.c. (complex impedance method), and ⁷Li NMR spin-lattice relaxation rate T₁ ^–1 measurements. Lithium ionic conductivity of mechanochemically prepared LTP and LATP was characterized by significant reduction of grain boundary resistance, especially for LTP, while the bulk conductivity and Li ion diffusion does not noticeably change. The activation energy of bulk conductivity and Li ion diffusion, i.e. short-range motion, appeared to be almost the same for all samples and was equal to ~0.20 eV. On contrary, the activation energy of d.c.-conductivity, i.e. long-range Li ion motion decreases from ~0.6 eV for ceramic samples to ~0.4 eV for samples prepared via mechanochemical route. It was proposed that MA leads to formation of nano-particulate high-conductive grain boundaries both in LTP and LATP. Paper presented at the 11th EuroConference on the Science and Technology of Ionics, Batz-sur-Mer, Sept. 9–15, 2007.     

Reverse engineering of Al<Subscript>x</Subscript>Ga<Subscript>1−x</Subscript>As/GaAs structures composition by reflectance spectroscopy

The paper presents the application of non-modulation reflectance method for composition profiling of epitaxial Al_xGa_−xAs/GaAs structures. This non-destructive method is based on spectral measurements and theoretical reflectance spectrum matching. This is a very accurate and sensitive method of determining the Al composition in Al_xGa_1−xAs layers and structures with resolution down to 1 nm. In this work, the authors describe theoretic principles of this method and present experimental results of characterization of different AlGaAs structures to prove the potential of the worked out method.