A facile synthesis of monodisperse CoFe2O4/SiO2 nanoparticles

Aminated-CoFe₂O₄/SiO₂ magnetic nanoparticles (NPs) were prepared from primary silica particles using modified StÖber method. By optimizing the preparation conditions, monodisperse CoFe₂O₄/SiO₂ NPs with high amino groups’ density were obtained, which is necessary for enzyme immobilization. TEM confirm that the sample is a core/shell structure. These aminated-CoFe₂O₄/SiO₂ NPs have narrow size distributions with a mean size of about 60 nm. Moreover, the aminated-CoFe₂O₄/SiO₂ NPs can be easily dispersed in aqueous medium. The experimental results also show that the NPs have superparamagnetism, indicating that the aminated-CoFe₂O₄/SiO₂ NPs can be used as an effective carrier for the enzyme immobilization.     

Dielectric properties of barium titanate ceramics modified by SiO2 and by BaO-SiO2

The influence of SiO₂ on the dielectric properties of barium titanate ceramics was investigated. SiO₂ had been doped solely and together with BaO into barium titanate before calcination. X-ray diffraction showed that all the ceramics were of a pure perovskite phase after sintering at 1275 °C for 2 h. For SiO₂-doping, there was about 2.5 °C increase in Curie temperature per molar percentage of doping and the leakage current was obviously increased, especially at low voltages for relatively high doping levels. While for the co-doping of SiO₂ and BaO, there was little change in Curie temperature. The point defects formed through the dopings were proposed responsible for the effects. It was suggested that SiO₂ is important to barium titanate ceramics not only for sintering but also for modifying their properties.     

Synthesis of Y2Si2O7:Eu nanocrystal and its optical properties

Nanocrystalline Y₂Si₂O₇:Eu phosphor with an average size about 60 nm is easily prepared using silica aerogel as raw material under ultrasonic irradiation and annealing temperature at 300-600 °C and this nanocrystalline decomposes into Y₂O₃:Eu and silica by heat treatment at 700-900 °C. The excitation broad band centered at 283 and 254 nm results from Eu³⁺ substituting for Y³⁺ in Y₂Si₂O₇ and Y₂O₃/SiO₂, respectively. Compared with Y₂O₃:Eu/SiO₂ crystalline, the PL excitation and emission peaks of Y₂Si₂O₇:Eu nanocrystalline red-shift and lead to the enhance of its luminescence intensity due to the different chemical surroundings of Eu³⁺ in above nanocrystallines. The decrease of PL intensity may be ascribed to quenching effect resulting from more defects in Y₂O₃:Eu/SiO₂ crystalline.     

Sol-gel growth of Gd2MoO6:Eu nanocrystalline layers on SiO2 spheres (SiO2@Gd2MoO6:Eu) and their luminescent properties

SiO₂@Gd₂MoO₆:Eu³⁺ core-shell phosphors were prepared by the sol-gel process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectra (EDS), transmission electron microscopy (TEM), photoluminescence (PL) spectra as well as kinetic decays were used to characterize the resulting SiO₂@Gd₂MoO₆:Eu³⁺ core-shell phosphors. The XRD results demonstrate that the Gd₂MoO₆:Eu³⁺ layers on the SiO₂ spheres begin to crystallize after annealing at 600 °C and the crystallinity increases with raising the annealing temperature. The obtained core-shell phosphors have a near perfect spherical shape with narrow size distribution (average size ca. 600 nm), are not agglomerated, and have a smooth surface. The thickness of the Gd₂MoO₆:Eu³⁺ shells on the SiO₂ cores could be easily tailored by varying the number of deposition cycles (50 nm for four deposition cycles). The Eu³⁺ shows a strong PL luminescence (dominated by ⁵D₀-⁷F₂ red emission at 613 nm) under the excitation of 307 nm UV light. The PL intensity of Eu³⁺ increases with increasing the annealing temperature and the number of coating cycles.     

Prepare high efficiency Mn-doped Zn2SiO4 green phosphors in air using nano-particles

In this study, nano-scale precursors of ZnO, SiO₂, and MnO₂ powders were used to prepare mixtures with the compositions of 2ZnO+SiO₂+X mol% MnO₂ (X=MnO₂/2ZnO, abbreviated as Zn₂SiO₄-X-MnO₂), where 2≤X≤5. The mixed Zn₂SiO₄-X-MnO₂ mixtures were calcined from 900 to 1300 °C in air in order to synthesize Zn₂SiO₄:Mn²⁺ green phosphors. The X-ray diffraction patterns of Zn₂SiO₄-X-MnO₂ particles indicated that ZnO was present in the 900 °C-calcined Zn₂SiO₄-X-MnO₂ phosphors, but not in particles calcined at temperatures of 1000 °C and higher. However, the unapparent secondary phase of ZnMnO₃ was found in the 1200 and 1300 °C-calcined Zn₂SiO₄-5-MnO₂ compositions. The luminescent characteristics of Zn₂SiO₄-X-Mn²⁺ phosphors were compared with that of a commercial product (Nichia Corp., Japan). The photoluminescence (PL) intensity of 1200 °C-calcined Zn₂SiO₄-4-MnO₂ phosphors was higher and the decay times of all synthesized Zn₂SiO₄-X-MnO₂ phosphors were longer than those of the commercial product.     

Preparation and properties of electroless Ni-P-SiO2 composite coatings

Dispersible SiO₂ nanoparticles were co-deposited with electroless Ni-P coating onto AISI-1045 steel substrates in the absence of any surfactants in plating bath. The resulting Ni-P/nano-SiO₂ composite coatings were heat-treated for 1 h at 200 °C, 400 °C, and 600 °C, respectively. The hardness and wear resistance of the heat-treated composite coatings were measured. Moreover, the structural changes of the composite coatings before and after heat treatment were investigated by means of X-ray diffraction (XRD), while their elemental composition and morphology were analyzed using an energy dispersive spectrometer (EDS) and a scanning electron microscope (SEM). Results show that co-deposited SiO₂ particles contributed to increase the hardness and wear resistance of electroless Ni-P coating, and the composite coating heat-treated at about 400 °C had the maximum hardness and wear resistance.     

SiC/SiO2 coating for improving the oxidation resistive property of carbon nanofiber

The SiC/SiO₂ deposition was performed to improve the oxidation resistive properties of carbon nanofiber (CNF) from electrospinning at elevated temperatures through sol-gel process. The stabilized polyacrylonitrile (PAN) fibers were coated with SiO₂ followed by heat treatment up to 1000 and 1400 °C in an inert argon atmosphere. The chemical compositions of the CNFs surface heat-treated were characterized as C, Si and O existing as SiC and SiO₂ compounds on the surface. The uniform and continuous coating improved the oxidation resistance of the carbon nanofibers. The residual weight of the composite was 70-80% and mixture of SiC, SiO₂ and some residual carbon after exposure to air at 1000 °C.     

Effect of TiO2/Al2O3 film coated diamond abrasive particles by sol-gel technique

The diamond abrasive particles were coated with the TiO₂/Al₂O₃ film by the sol-gel technique. Compared with the uncoated diamonds, the TiO₂/Al₂O₃ film was excellent material for the protection of the diamonds. The results showed that the incipient oxidation temperature of the TiO₂/Al₂O₃ film coated diamonds in air atmosphere was 775 °C, which was higher 175 °C than that of the uncoated diamonds. And the coated diamonds also had better the diamond's single particle compressive strength and the impact toughness than that of uncoated diamonds after sintering at 750 °C. For the vitrified bond grinding wheels, replacing the uncoated diamonds with the TiO₂/Al₂O₃ film coated diamonds, the volume expansion of the grinding wheels decreased from 6.2% to 3.4%, the porosity decreased from 35.7% to 25.7%, the hardness increased from 61.2H_RC to 66.5H_RC and the grinding ratio of the vitrified bond grinding wheels to carbide alloy (YG8) increased from 11.5 to 19.1.     

Luminescent properties of Eu-activated Sr3B2SiO8: A red-emitting phosphor for white light-emitting diodes

Single-phased Sr₃B₂SiO₈:Eu³⁺ phosphor was prepared by a solid-state method at 1020 °C. The luminescence spectra showed that Sr₃B₂SiO₈:Eu³⁺ phosphor can be effectively excited by near ultraviolet light (393 nm) and blue light (464 nm). When excited at 393 or 464 nm Sr₃B₂SiO₈:Eu³⁺ exhibited the main emission peaks at 611 and 620 nm, which resulted from the supersensitive ⁵D₀→⁷F₂ transition of Eu³⁺. The luminescence intensity of Sr₃B₂SiO₈:Eu³⁺ at 611 and 620 nm reached the maximum when the doping content of Eu³⁺ was 4.5 mol%. Its chromaticity coordinates (0.646, 0.354) were very close to the NTSC standard values (0.67, 0.33). Thus, Sr₃B₂SiO₈:Eu³⁺ is considered to be an efficient red-emitting phosphor for long-UV InGaN-based light-emitting diodes.     

Preparation and characterization of novel Pd/SiO2 and Ca-Pd/SiO2 egg-shell catalysts with porous hollow silica

Novel egg-shell structured monometallic Pd/SiO₂ and bimetallic Ca-Pd/SiO₂ catalysts were prepared by an impregnation method using porous hollow silica (PHS) as the support and PdCl₂ and Ca(NO₃)₂·4H₂O as the precursors. It was found from transmission electron microscope (TEM), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) that Pd was loaded on PHS with a particle size of 5-12 nm in Pd/SiO₂ samples and the Pd particle size in Ca-Pd/SiO₂ was smaller than that in Pd/SiO₂ since Ca could prevent Pd particles from aggregating. X-ray photoelectron spectroscopy (XPS) analyses exhibited that Pd 3d_5/2 binding energies of Pd/SiO₂ and Ca-Pd/SiO₂ were 0.2 and 0.9 eV lower than that of bulk Pd, respectively, as a result of the shift of the electron cloud from Pd to oxygen in Pd/SiO₂ and to both oxygen and Ca in Ca-Pd/SiO₂. The activity of Ca-Pd/SiO₂ egg-shell catalyst for CO hydrogenation and the selectivity to methanol, with a value of 36.50 mmol_CO mol⁻¹_Pd s⁻¹ and 100%, respectively, were much higher than those of the catalysts prepared with traditional silica gel as the support, owing to the porous core-shell structure of the PHS support.     

A novel method for immobilization of Co tetraphenylporphyrins on P(4VP-co-St)/SiO2: Efficient catalysts for aerobic oxidation of ethylbenzenes

In this paper, poly(4vinylpyridine-co-styrene) (P(4VP-co-St)) was grafted on silica gel particles in the manner of “grafting from”, and the grafting particle P(4VP-co-St)/SiO₂ was gained. The grafting particle P(4VP-co-St)/SiO₂ is a novel kind of supports for immobilizing metalloporphyrin catalysts. Then, the immobilization of cobalt tetraphenylporphyrin (CoTPP) on the supports P(4VP-co-St)/SiO₂ was carried out via the axial coordination reaction between CoTPP and the pyridine groups of the grafted P(4VP-co-St), resulting in the heterogenised catalysts CoTPP-P(4VP-co-St)/SiO₂. The synthesized catalysts were characterized by FTIR and the axial coordination process between CoTPP and the grafted P(4VP-co-St) was confirmed by UV-vis. The effects of various factors on the immobilization reaction of CoTPP were studied in detail. Finally, the catalytic performance of CoTPP-P(4VP-co-St)/SiO₂ in the catalytic oxidation process of ethyl benzene was investigated. The experimental results show that the axial coordination reaction is a very easy and novel method for favorably immobilizing CoTPP onto the P(4VP-co-St)/SiO₂ surfaces. During the immobilization process of CoTPP on P(4VP-co-St)/SiO₂, the most bonding amount of CoTPP (0.19 g/g) is obtained under the lower temperature (5 °C) and the higher concentration of CoTPP(6.0 mg/ml) lasting 4 h. Moreover, the supported catalyst CoTPP-P(4VP-co-St)/SiO₂ can effectively activate the dioxygen, and obviously catalyze the transform of ethylbenzene into acetophenone. So it exhibits the fine catalytic activity.     

Structural and optical properties of SrCu2O2 films deposited on sapphire substrates by pulsed laser deposition

We deposited SrCu₂O₂ (SCO) films on sapphire (Al₂O₃) (0 0 0 1) substrates by pulsed laser deposition. The crystallographic orientation of the SCO thin film showed clear dependence on the growth temperature. X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis showed that the film deposited at 400 °C was mainly oriented in the SCO [2 0 0] direction, whereas when the growth temperature was increased to 600 °C, the SCO film showed a dominant orientation of SCO [1 1 2]. The SCO film deposited at 500 °C was obvious polycrystalline, showing multi peaks from (2 0 0), (1 1 2), and (2 1 1) diffraction in the XRD spectrum. The SCO film deposited at 600 °C showed a band gap energy of 3.3 eV and transparency up to 80% around 500 nm. The photoluminescence (PL) spectra of the SCO films grown at 500 °C and 600 °C mainly showed blue-green emission, which was attributed to the intra-band transition of the isolated Cu⁺ and Cu⁺–Cu⁺ pairs according to the temperature dependent-PL analysis.     

Effect of Li2O and CoO-doping of CuO/Fe2O3 system on its surface and catalytic properties

Physicochemical, surface and catalytic properties of pure and doped CuO/Fe₂O₃ system were investigated using X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), nitrogen adsorption at −196 °C and CO-oxidation by O₂ at 80-220 °C using a static method. The dopants were Li₂O (2.5 mol%) and CoO (2.5 and 5 mol%). The results revealed that the increase in precalcination temperature from 400 to 600 °C and Li₂O-doping of CuO/Fe₂O₃ system enhanced CuFe₂O₄ formation. However, heating both pure and doped solids at 600 °C did not lead to complete conversion of reacting oxides into CuFe₂O₄. The promotion effect of Li₂O dopant was attributed to dissolution of some of dopant ions in the lattices of CuO and Fe₂O₃ with subsequent increase in the mobility of reacting cations. CoO-doping led also to the formation of mixed ferrite Co_xCu_1−xFe₂O₄. The doping process of the system investigated decreased to a large extent the crystallite size of unreacted portion of Fe₂O₃ in mixed solids calcined at 600 °C. This process led to a significant increase in the S_BET of the treated solids. Doping CuO/Fe₂O₃ system with either Li₂O or CoO, followed by calcination at 400 and 600 °C decreased its catalytic activity in CO-oxidation by O₂. However, the activation energy of the catalyzed reaction was not much affected by doping.     

Properties of thick SiO2/Si structure formed at 120 °C by use of two-step nitric acid oxidation method

Thick (i.e., ∼10 nm) SiO₂/Si structure has been formed at 121 °C by immersion of Si in relatively low concentration HNO₃ followed by that in 68 wt.% HNO₃ (i.e., two-step nitric acid (HNO₃) oxidation method of Si, NAOS) and spectroscopic properties and electrical characteristics of the NAOS SiO₂ layers are investigated. The SiO₂ thickness strongly depends on the concentration of HNO₃ aqueous solutions employed in the initial oxidation, and it becomes the largest at the HNO₃ concentration of 40 wt.%. The MOS diodes with the ∼9 nm SiO₂ layer formed by the NAOS method possess a relatively low leakage current density (e.g., 10⁻⁸ A/cm² at the forward bias of 1 V) and it is further decreased by more than one order of magnitude by post-metallization annealing (PMA) in hydrogen at 250 °C. The good leakage characteristic is attributable to atomically flat SiO₂/Si interfaces and high atomic density of 2.30-2.32 × 10²² atoms/cm³ of the NAOS SiO₂ layers. High-density interface states are present in as-prepared SiO₂ layers and they are eliminated by PMA in hydrogen.     

The electrical properties of dielectric stacks of SiO2 and Al2O3 prepared by atomic layer deposition method

We produced dielectric stacks composed of ALD SiO₂ and ALD Al₂O₃, such as SiO₂/Al₂O₃, Al₂O₃/SiO₂, and SiO₂/Al₂O₃/SiO₂, and measured the leakage currents through the stacks in comparison with those of the single oxide layers. SiO₂/Al₂O₃ shows lowest leakage current for negative bias region below 6.4 V, and Al₂O₃/SiO₂ showed highest current under negative biases below 4.5 V. Two distinct electron conduction regimes are observed for Al₂O₃ and SiO₂/Al₂O₃. Poole-Frenkel emission is dominant at the high-voltage regime for both dielectrics, whereas the direct tunneling through the dielectric is dominant at the low-voltage regime. The calculated transition voltage between two regimes for SiO₂ (6.5 nm)/Al₂O₃ (12.6 nm) is −6.4 V, which agrees well with the experimental observation (−6.1 V). For the same EOT of entire dielectric stack, the transition voltage between two regimes decreases with thinner SiO₂ layer.     

Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics

We describe the structural properties and electrical characteristics of thin thulium oxide (Tm₂O₃) and thulium titanium oxide (Tm₂Ti₂O₇) as gate dielectrics deposited on silicon substrates through reactive sputtering. The structural and morphological features of these films were explored by X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy, measurements. It is found that the Tm₂Ti₂O₇ film annealed at 800 °C exhibited a thinner capacitance equivalent thickness of 19.8 Å, a lower interface trap density of 8.37 × 10¹¹ eV⁻¹ cm⁻², and a smaller hysteresis voltage of ∼4 mV than the other conditions. We attribute this behavior to the Ti incorporated into the Tm₂O₃ film improving the interfacial layer and the surface roughness. This film also shows negligible degrees of charge trapping at high electric field stress.     

Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD

Epitaxial In₂O₃ films have been deposited on Y-stabilized ZrO₂ (YSZ) (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD). The films were deposited at different substrate temperatures (450-750 °C). The film deposited at 650 °C has the best crystalline quality, and observation of the interface area shows a clear cube-on-cube epitaxial relationship of In₂O₃(1 0 0)||YSZ(1 0 0) with In₂O₃[0 0 1]||YSZ[0 0 1]. The Hall mobility of the single-crystalline In₂O₃ film deposited at 650 °C is as high as 66.5 cm² V⁻¹ s⁻¹ with carrier concentration of 1.5 × 10¹⁹ cm⁻³ and resistivity of 6.3 × 10⁻³ Ω cm. The absolute average transmittance of the obtained films in the visible range exceeds 95%.     

Influence of calcining temperature on photoluminescence and thermal quenching in europium-doped Y2SiO5 using the MOD process

The crystalline Eu_0.25Y_1.75SiO₅ (EYSO) fine powders were prepared using metallorganic decomposition process, in which the pure X₁- and X₂-Y₂SiO₅ phases were obtained by calcining at temperatures from 850°C to 1600°C. The influence of calcining temperature on photoluminescence (PL) and thermal quenching were systematically investigated from room temperature to 573 K for the first time. As a consequence, the X₂-EYSO was higher in light emission intensities than the X₁-EYSO, but the X₁-EYSO possessed better temperature dependence of PL. The phase structure had a significant effect on the light emission intensity and energy as well as its temperature characteristics in the EYSO.     

Study of the synthesis and Cl2 gas-sensing properties of nanometer HNO3-doped SnO2

We focused on the effects of the inorganic acid HNO₃ on the gas-sensing properties of nanometer SnO₂ and prepared the powders via a dissolution-pyrolysis method. Furthermore, the powders were characterized by means of X-ray diffraction (XRD), scanning electron microscope (SEM), field emission scanning electron microscopy (FESEM) and energy-dispersive X-ray spectra (EDS). Several aspects were surveyed, including the calcining temperature, concentration of nitric acid and the working temperature. The results showed that the gas response of 3 wt% HNO₃-doped SnO₂ powders (calcined at 500 °C) to 10 ppm Cl₂ reached 316.5, at the working temperature 175 °C. Compared with pure SnO₂, appropriate HNO₃ could increase the gas sensitivity to Cl₂ gas more significantly.     

Creation of nanoparticles and luminescence in Al2O3 crystal by Zn ion implantation

Single crystal α-Al₂O₃ wafers were implanted with 45 keV Zn ions up to a fluence of 1×10¹⁷ ions/cm², and were then subjected to furnace annealing in oxygen atmosphere at different temperatures. Various techniques have been applied to study the creation of nanoparticles (NPs), defects and their thermal evolutions, as well as their effects on optical properties of Al₂O₃. Our results clearly show that Zn NPs have been synthesized in the as-implanted sample and they begin to be oxidized at 500 °C. Two broad photoluminescence bands appear in the Zn ion-implanted samples and their intensities depend on the annealing temperatures. The results have been interpreted in view of creation of the defects and NPs, Zn atoms diffusion as well as their thermal evolution during annealing.