Glass formation in the Sb2O3-ZnBr2 binary system

Glass formation has been investigated in the Sb₂O₃-ZnBr₂ binary system. Vitreous samples have been obtained for batches containing 20-90 mol% Sb₂O₃. Chemical analysis shows that bromine concentration is smaller than expected and real compositions belong to the Sb₂O₃-ZnBr₂-ZnO ternary system. However, the discrepancy between nominal and analyzed compositions is fair for Sb₂O₃ content larger than 50 mol%. Optical transmission lies between 400 nm and 7 μm and refractive index ranges from 2.0 to 2.1. Glass transition occurs around 300 °C, and crystallization exotherm does not appear in the differential scanning calorimetry scan at 10 K s⁻¹ for samples containing 50-60 mol% Sb₂O₃. Thermal expansion varies between 120 and 220×10⁻⁷ K⁻¹ as antimony content decreases. Microhardness is close to 200 kg/mm². These glasses have low phonon energy and make potential materials for infrared transmission and active fibers.     

Infrared-to-visible upconversion in Er and Er/Yb activated Sb2O4 nanopowders prepared by sol-gel route

We prepared Er³⁺ doped and Er³⁺/Yb³⁺ codoped Sb₂O₄ nanocrystals by the sol-gel method. The Raman, X-ray diffraction (XRD), transmission electron microscope (TEM), and photoluminescence spectra of the samples were studied. The phonon energy of the Sb₂O₄ nanocrystals is very low (the maximum value being 461 cm⁻¹). The upconversion (UC) red emission of the Er³⁺/Yb³⁺ codoped sample is very strong at 975 nm laser diode excitation. The Sb₂O₄ nanocrystals will be a promising luminous material.     

High thermal stability and low thermal conductivity in Ga30Sb70/Sb80Te20 nanocomposite multilayer films

The reliability characteristics and thermal conductivity of Ga₃₀Sb₇₀/Sb₈₀Te₂₀ nanocomposite multilayer films were investigated by isothermal resistance and transient thermoreflectance (TTR) measurements, respectively. The crystallization temperature and activation energy for the crystallization can be modulated by varying the layer thickness of Ga₃₀Sb₇₀. A data retention time of ten years of the amorphous state [Ga₃₀Sb₇₀ (3 nm)/Sb₈₀Te₂₀ (5 nm)]₁₃, [Ga₃₀Sb₇₀ (5 nm)/Sb₈₀Te₂₀ (5 nm)]₁₀, and [Ga₃₀Sb₇₀ (10 nm)/Sb₈₀Te₂₀ (5 nm)]₇ was estimated when ambient temperature is 137, 163, and 178 °C, respectively. Ga₃₀Sb₇₀/Sb₈₀Te₂₀ nanocomposite multilayer films were found to have lower thermal conductivity in both the amorphous and crystalline state compared to Ge₂Sb₂Te₅ film, which will promise lower programming power in the phase-change random access memory.     

On the structure, morphology, and optical properties of chemical bath deposited Sb2S3 thin films

In the present paper, we have reported the room temperature growth of antimony sulphide (Sb₂S₃) thin films by chemical bath deposition and detailed characterization of these films. The films were deposited from a chemical bath containing SbCl₃ and Na₂S₂O₃ at 27 °C. We have analysed the structure, morphology, composition and optical properties of as deposited Sb₂S₃ films as well as those subjected to annealing in nitrogen atmosphere or in air. As-deposited films are amorphous to X-ray diffraction (XRD). However, the diffused rings in the electron diffraction pattern revealed the existence of nanocrystalline grains in these films. XRD analysis showed that upon annealing in nitrogen atmosphere these films transformed into polycrystalline with orthorhombic structure. Also, we have observed that during heating in air, Sb₂S₃ first converts into orthorhombic form and then further heating results in the formation of Sb₂O₃ crystallites. Optical bandgap energy of as deposited and annealed films was evaluated from UV-vis absorption spectra. The values obtained were 2.57 and 1.73 eV for the as-deposited and the annealed films respectively.     

Self-assembly of Sb2O3 nanowires into microspheres: Synthesis and characterization

Sb₂O₃ nanowires with diameters of ∼233 nm and microspheres assembled by these nanowires were successfully synthesized by a simple poly-(vinylpyrrolidone) (PVP) assisted hydrothermal method. The morphologies, nano/microstructures and optical properties of the as-grown nanowires and microspheres were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and UV-vis diffuse reflection spectrum. It has been found that the experimental parameters, such as mineralizers, played crucial roles in the morphological control of Sb₂O₃ nanowires. The possible growth mechanism of microspheres has been proposed.     

Interaction of Sb ions with Eu ions during the room temperature synthesis of luminescent Sb2O3 nanorods: Probed through Eu luminescence

The interaction of Eu³⁺ with Sb³⁺ ions during the room temperature synthesis of luminescent Sb₂O₃ nanorods is investigated using luminescence and vibrational spectroscopic techniques. Our results demonstrate that well crystalline, oriented Sb₂O₃ nanorods having length of around 3-4 μm, a width of around 100-200 nm and luminescence at around 390 nm can be synthesized at room temperature. Incorporation of Eu³⁺ in these nanorods has been attempted and it is found that Eu³⁺ ions do not have any interaction with nanorods and their orientation. Detailed Eu³⁺ luminescence and XRD studies confirmed that a part of Sb³⁺ ions reacts with Eu³⁺ ions in the presence of hydroxyl ions (present in the medium) to form an amorphous antimony europium hydroxide compound. The amorphous compound on heating at high temperatures leads to its decomposition, giving hydrated Sb(V) oxides and Eu₂O₃ as major phases.     

Optical absorption and thermoluminescence studies on LiF-Sb2O3-B2O3 glasses doped with Ni ions

20LiF-(30−x)Sb₂O₃-50B₂O₃:xNiO glasses with the value of x (ranging from 0 to 1.0 mol% in steps of 0.2) were prepared. A number of studies, viz. differential scanning calorimetry, optical absorption, magnetic susceptibility and thermoluminescence, on these glasses were carried out as a function of nickel ion concentration. An anomaly has been observed in all the properties of these glasses when NiO concentration is about 0.6 mol%. The results of these studies were analysed in the light of different environments of nickel ions in the glass network.     

Performance improvement of Sb2Te3 phase change material by Al doping

Al doped Sb₂Te₃ material was proposed to improve the performance of phase-change memory. Crystallization temperature, activation energy, and electrical resistance of the Al doped Sb₂Te₃ films increase markedly with the increasing of Al concentration. The additional Al-Sb and Al-Te bonds enhance the amorphous thermal stability of the material. Al_0.69Sb₂Te₃ material has a better data retention (10 years at 110 °C) than that of Ge₂Sb₂Te₅ material (10 years at 87 °C). With a 100 ns width voltage pulse, SET and RESET voltages of 1.3 and 3.3 V are achieved for the Al_0.69Sb₂Te₃ based device.     

Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application

The amorphous-to-crystalline transition of Ge/Sb₂Te₃ nanocomposite multilayer films with various thickness ratios of Ge to Sb₂Te₃ were investigated by utilizing in situ temperature-dependent film resistance measurements. The crystallization temperature and activation energy for the crystallization of the multilayer films increased with the increase in thickness ratio of Ge to Sb₂Te₃. The difference in sheet resistance between amorphous and crystalline states could reach as high as 10⁴ Ω/□. The crystallization temperature and activation energy for the crystallization of Ge/Sb₂Te₃ nanocomposite multilayer films was proved to be larger than that of conventional Ge₂Sb₂Te₅ film, which ensures a better data retention for phase-change random access memory (PCRAM) use. A data retention temperature for 10 years of the amorphous state [Ge (2 nm)/Sb₂Te₃ (3 nm)]₄₀ film was estimated to be 165 °C. Transmission electron microscopy (TEM) images revealed that Ge/Sb₂Te₃ nanocomposite multilayer films had layered structures with clear interfaces.     

Structural studies and physical properties of novel Sm-doped Sb2Se3 nanorods

Sm³⁺ doped Sb₂Se₃ nanorods were synthesized by the co-reduction method at 180 °C and pH=12 for 48 h. Powder XRD patterns indicate that the Sm_xSb_2−xSe₃ crystals (x=0.00-0.05) are isostructural with Sb₂Se₃. The cell parameters increase for Sm³⁺ upon increasing the dopant content (x). SEM images show that doping of Sm³⁺ ions in the lattice of Sb₂Se₃ results in nanorods. High-resolution transmission electron microscopic (HRTEM) studies reveal that the Sm_0.05Sb_1.95Se₃ is oriented in the [1 0 −1] growth direction. UV-vis absorption reveals mainly electronic transitions of the Sm³⁺ ions in doped nanomaterials. Emission spectra of doped materials, in addition to the characteristic red emission peaks of Sb₂Se₃, show other emission bands originating from f-f transitions of the Sm³⁺ ions. The electrical conductance of Sm-doped Sb₂Se₃ is higher than undoped Sb₂Se₃ and increase with temperature.     

Magnetic and transport properties of Mn-doped Bi2Se3 and Sb2Se3

We report on the single crystal growth and thermoelectric and magnetic properties of Mn-doped Bi₂Se₃ and Sb₂Se₃ single crystals prepared by the temperature gradient solidification method. The composition and crystal structure were determined using electron probe microanalysis and θ–2θ powder X-ray diffraction studies, respectively. The lattice constants of several percent Mn-doped Bi₂Se₃ and Sb₂Se₃ were slightly smaller than those of the undoped sample due to the smaller Mn atomic radius (1.40 Å) than those of Bi (1.60 Å) and Sb (1.45 Å). Mn-doped Bi₂Se₃ and Sb₂Se₃ showed spin-glass and paramagnetic properties, respectively.     

Enhanced grain growth and improved optical properties of the Sn doped thin films of Sb2S3 orthorhombic phase

The applications of newer Sb₂S₃ material as a suitable absorber material for the solar cells have been effected by the toxicity of Sb. The present study is an effort to synthesize lower Sb contents Sn doped Sb₂S₃ materials by retaining or improving the morphological and optical properties. SnCl₂ and SbCl₃ are used respectively as Sn and Sb sources, while Na₂S₂O₃ has been used as a source of S in chemical bath deposition method. Bath temperature was maintained at 10 °C and the deposition time was 4 h and the annealing of the films in vacuum was done for 2 h at 250 °C. X-ray diffraction, Rutherford backscattering spectroscopy, scanning electron microscopy and ultraviolet/visible light spectroscopy have been used for the study of structural, morphological and the optical properties. The chemical composition determined from RBS is Sn_0.11Sb₂S₃. Phase analysis confirms the orthorhombic Sb₂S₃ phase with b and c axis as the preferred ones for the impurity Sn atoms. Grain growth at lower deposition temperature is enhanced on the account of doping. Nanosized spherical particles are seen in the optical micrographs. Annealing lowers the band gap, the values being 1.50 and 1.31 eV for the unannealed and the annealed samples respectively.     

Characteristics of Ti0.97Co0.03O2:Sb0.01 dilute magnetic semiconducting thin films deposited at 500 °C by pulsed laser deposition

Epitaxial Ti_0.97Co_0.03O₂:Sb_0.01(TCO:Sb) films were deposited on R-Al₂O₃ (1 1 0 2) substrates at 500 °C in various deposition pressures by pulsed laser deposition. The solubility of cobalt within the films increases with decreasing deposition pressure at a deposition temperature of 500 °C. The TCO:Sb films deposited at 5×10⁻⁶ Torr exhibit a p-type anomalous Hall effect having a hole concentration of 6.1×10²²/cm³ at 300 K. On the other hand, films deposited at 4×10⁻⁴ Torr exhibits an n-type anomalous Hall effect having an electron concentration of about 1.1×10²¹/cm³. p- or n-type DMS characteristics depends on the change of the structure of TCO:Sb films and the solubility of Co is possible by controlling the deposition pressure.     

Fabrication of tungsten oxide microfibers with photocatalytic activity by electrospunning from PVA/H3PW12O40 gel

Regarding gel poly (vinyl alcohol)/H₃PW₁₂O₄₀ as precursor, the ultra-fine fibers tungsten oxide (WO₃) was prepared by using electrospinning and calcinating techniques. Scanning electron microscope (SEM) shows that the average diameter of fibrous WO₃ were changed from 200 nm to 600 nm after calcined PVA/H₃PW₁₂O₄₀ fibers at 600 and 800 °C, respectively. X-ray diffraction (XRD) and Raman spectroscope revealed that the fibrous WO₃ was monoclinic phase, and the band-gap energies were observed by UV-vis diffuse reflectance spectra. The small size WO₃ exhibits excellent photocatalytcic activity in degradation of Rhodamine B at 365 nm wavelength.     

First-principle study of electronic structure and stability of Sn0.5Sb0.5O2

A theoretical study on Sb-doped SnO₂ has been carried out by means of periodic density functional theory (DFT) at generalized gradient approximation (GGA) level. Stability and conductivity analyses were performed based on the formation energy and electronic structures. The results show that Sn_0.5Sb_0.5O₂ solid solution is stable because the formation energy of Sn_0.5Sb_0.5O₂ is −0.06 eV. The calculated energy band structure and density of states showed that the band gap of SnO₂ narrowed due to the presence of the Sb impurity energy levels in the bottom of the conduction band, namely there is Sb 5s distribution of electronic states from the Fermi level to the bottom of conduction band after the doping of antimony. The studies provide a theoretical basis to the development and application of Sn_1−xSb_xO₂ solid solution electrode.     

Structural and photoluminescence characters of SnO2:Sb films deposited by RF magnetron sputtering

The Antimony-doped tin oxide (SnO₂:Sb) films have been prepared on glass substrates by RF magnetron sputtering method. The prepared samples are polycrystalline films with rutile structure of pure SnO₂ and have preferred orientation of (1 1 0) direction. XRD measurement did not detect the existence of Sb₂O₃ phase and Sb₂O₅ phase; Sb ions occupy the site of Sn ions and form the substitution doping. An intensive UV-violet luminescence peak near 392 nm is observed at room temperature. Photoluminescence (PL) properties influenced by sputtering power and annealing for the SnO₂:Sb films are investigated in detail and corresponding PL mechanism is discussed.     

Third-order nonlinear optical properties of Bi2S3 and Sb2S3 nanorods studied by the Z-scan technique

Bismuth sulfide (Bi₂S₃) and antimony sulfide (Sb₂S₃) nanorods were synthesized by hydrothermal method. The products were characterized by UV-vis spectrophotometer, X-ray powder diffraction (XRD) and transmission electron microscope (TEM). Bi₂S₃ and Sb₂S₃ nanorods were measured by Z-scan technique to investigate the third-order nonlinear optical (NLO) properties. The result of NLO measurements shows that the Bi₂S₃ and Sb₂S₃ nanorods have the behaviors of the third-order NLO properties of both NLO absorption and NLO refraction with self-focusing effects. The third-order NLO coefficient χ⁽³⁾ of the Bi₂S₃ and Sb₂S₃ nanorods are 6.25×10⁻¹¹ esu and 4.55×10⁻¹¹ esu, respectively. The Sb₂S₃ and Bi₂S₃ nanorods with large third-order NLO coefficient are promising materials for applications in optical devices.     

Au doped Sb3Te phase-change material for C-RAM device

Au doped Sb₃Te phase-change films have been investigated by means of in situ temperature-dependent resistance measurement. Crystallization temperature of 2 at.% Au doped Sb₃Te has been enhanced to 161 °C, which leads to a better data retention. The physical stability of the film has been improved evidently after adding Au as well. Resistance contrast has been improved to 1.1 × 10⁴, one order of magnitude higher than that of pure Sb₃Te. X-ray diffraction patterns indicate the polycrystalline Au-SbTe series have hexagonal structure, similar with pure Sb₃Te alloy, when Au doping dose is less than 9 at.%.     

Scalable synthesis of Sb(III)Sb(V)O4 nanorods from Sb2O5 powder via solvothermal processing

Scalable Sb(III)Sb(V)O₄ nanorods from Sb₂O₅ powder were prepared using solvothermal route. XRD and HRTEM demonstrate that the nanorods are single-crystal orthorhombic-Sb₂O₄ phase with several micrometers long and 200-300 nm diameter size. XPS result further shows that the antimony cations in the nanorods are composed of three valence and five valence antimony ions. The emission of the nanorods appears around 450 nm wavelength. The formation mechanism of the Sb(III)Sb(V)O₄ nanorods was discussed in detail.     

Effects of Ge doping on the properties of Sb2Te3 phase-change thin films

Ge-doped Sb₂Te₃ films were prepared by magnetron sputtering of Ge and Sb₂Te₃ targets on SiO₂/Si (1 0 0) substrates. The effect of Ge doping on the structure was studied in details by X-ray diffraction, differential scanning calorimetry, and X-ray photoelectron spectroscopy measurements. It is indicated that Ge atoms substitute for Sb/Te in lattice sites and form Ge-Te bonds, moreover, a metastable phase was observed in Ge-doped specimens. Both crystallization temperature and resistivity of amorphous Sb₂Te₃ increase after Ge doping, which are beneficial for improving room temperature stability of the amorphous state and reducing the SET current of chalcogenide random access memory.