Effects of the Hf content on the microstructure and magnetic properties of Co-Hf-Ta thin films

Effects of the Hf content in Co-Hf-Ta thin films on the microstructure and magnetic properties were investigated in this study. It was found that appropriate Hf addition can effectively refine the Co grain size. Co grain sizes sharply decreased from 50 nm down to 2.3 nm with increasing the Hf content from 1.02 at.% to 2.81 at.%, leading to the reduced magneto-crystalline anisotropy. The Co-Hf-Ta thin films with small Co grains reveal low anisotropy field, low coercivity, and high resistivity. By optimizing the Hf content, the film with Hf concentration of 2.81 at.% exhibits excellent soft magnetic properties: high saturation magnetization (4πM_S ∼ 13.6 kG), and low coercivity (H_C ∼ 0.6 Oe). The effective permeability of the film reaches 800 and remains constant up to 1 GHz.     

Application of nanocrystalline FeHfN soft magnetic films to power inductors

In the communications industry, miniaturization is a requirement for inductor devices. To miniaturize power inductors, high inductance is necessary. To this end, high-permeability FeHfN magnetic films are used to enhance the inductance of power inductors. These nanocrystalline FeHfN soft magnetic films, each roughly 700 nm thick, were deposited onto Si substrates using nitrogen reactive sputtering. In this study, planar sandwiched power inductors containing FeHfN films have a higher inductance than air-core power inductors. Inductance (L) of high-permeability FeHfN films is enhanced significantly by roughly 13% compared with that of air-core inductors at 5 MHz. Integrating power inductors with FeHfN films may increase extra parasitic capacitance. Moreover, the increased eddy current loss is created by the low resistivity of FeHfN films. Therefore, the quality factor (Q) of sandwiched power inductors decreases at 5 MHz. Conversely, saturation current (I_sat) of these planar sandwiched power inductors exceeds 2 A. Such planar power inductors with the high-permeability FeHfN films are a promising candidate for applications in DC-DC converters.     

Microstructure and soft magnetic properties of CoFeZrO thin films

Nanogranular CoFeZrO thin films were successfully prepared by radio frequency reactive magnetron sputtering in O₂/Ar atmosphere. The magnetic properties and microstructure were investigated. It is found that the Co_17.08Fe_49.76Zr_16.24O_16.91 films show the best soft magnetic properties: magnetic coercivity of 0.3 Oe; anisotropy field of 44.9 Oe; saturation magnetization of 16.8 kG; electrical resistivity of 462.8 μΩ cm. The effective permeability of the films reaches 800 and flattens up to 2 GHz.     

Effect of Co underlayer on soft magnetic properties and microstructure of FeCo thin films

High saturation magnetization soft magnetic FeCo (=Fe₆₅Co₃₅) films were prepared using a thin Co underlayer. The FeCo/Co films exhibited a well-defined in-plane uniaxial anisotropy with easy axis coercivity (H_ce) of 10 Oe and hard axis coercivity (H_ch) of 3 Oe, and a half reduction of H_c with H_ce=4.8 Oe and H_ch=1.0 Oe was obtained when the composition was adjusted to 25 at% Co. The effective permeability of the films remains flat around 250 to 800 MHz. The saturation magnetostriction was 5.2×10⁻⁵ and the intrinsic stress was 0.8 GPa in FeCo single layer, both were slightly reduced by Co underlayer. The Co underlayer changed the preferred orientation of the FeCo films from (2 0 0) to (1 1 0) but more significantly, reduced the average grain size from ∼74 to ∼8.2 nm. It also reduced the surface roughness from 2.351 to 0.751 nm. The initial stage and interface diffusion properties were examined by TEM and XPS.     

Microstructure and magnetic properties of nanocomposite FePt/MgO and FePt/Ag films

An in-plane magnetic anisotropy of FePt film is obtained in the MgO 5 nm/FePt t nm/MgO 5 nm films (where t=5, 10 and 20 nm). Both the in-plane coercivity (H_c∥) and the perpendicular magnetic anisotropy of FePt films are increased when introducing an Ag-capped layer instead of MgO-capped layer. An in-plane coercivity is 3154 Oe for the MgO 5 nm/FePt 10 nm/MgO 5 nm film, and it can be increased to 4846 Oe as a 5 nm Ag-capped layer instead of MgO-capped layer. The transmission electron microscopy (TEM)-energy disperse spectrum (EDS) analysis shows that the Ag mainly distributed at the grain boundary of FePt, that leads the increase of the grain boundary energy, which will enhance coercivity and perpendicular magnetic anisotropy of FePt film.     

Microstructure and microwave permeability of FeCo thin films with Co underlayer

Microstructure, static magnetic properties and microwave permeability of sputtered FeCo films were examined. Fe₆₀Co₄₀ films (100 nm in thickness) deposited on glass substrates exhibited in-plane isotropy and a large coercivity of 161.1 Oe. When same thickness films were deposited on 2.5 nm Co underlayer, well-defined in-plane anisotropy was formed with an anisotropy field of 65 Oe. The sample had a static initial permeability of about 285, maximum imaginary permeability of 1255 and ferromagnetic resonance frequency of 2.71 GHz. Cross-sectional TEM image revealed that the Co underlayer had induced a columnar grain structure with grain diameter of 10 nm in the FeCo films. In comparison, FeCo films without Co underlayer showed larger grains of 70 nm in diameter with fewer distinct vertical grain boundaries. In addition, the Co underlayer changed the preferred orientation of the FeCo from (1 0 0) to (1 1 0). The improvement in soft magnetic properties and microwave behavior originates from the modification of the film microstructure, which can be well understood by the random anisotropy theory.     

Effect of oxygen pressure on microstructure and magnetic properties of strontium hexaferrite (SrFe12O19) film prepared by pulsed laser deposition

The effects of oxygen pressure during deposition on microstructure and magnetic properties of strontium hexaferrite (SrFe₁₂O₁₉) films grown on Si (100) substrate with Pt (111) underlayer by pulsed laser deposition have been investigated. X-ray diffraction pattern confirms that the films have c-axis perpendicular orientation. The c-axis dispersion (Δθ₅₀) increases and c-axis lattice parameter decreases with increasing oxygen pressure. The films have hexagonal shape grains with diameter of 150-250 nm as determined by atomic force microscopy. The coercivities in perpendicular direction are higher than those in in-plane direction, which shows the films have perpendicular magnetic anisotropy. The saturation magnetization and anisotropy field for the film deposited in oxygen pressure of 0.13 mbar are comparable to those of the bulk strontium hexaferrite. Higher oxygen pressure leads to the films having higher coercivity and squareness. The coercivity in perpendicular and in-plane directions of the film deposited in oxygen pressure of 0.13 mbar are 2520 Oe and 870 Oe, respectively.     

Soft magnetic properties of FeCo films with Co underlayer

Bilayered Fe₆₅Co₃₅ (=FeCo)/Co films were prepared by facing targets sputtering with 4πM_s∼24 kg. The soft magnetic properties of FeCo films were induced by a Co underlayer. H_c decreased rapidly when the Co underlayer was 2 nm or more. The films showed well-defined in-plane uniaxial anisotropy with the typical values of H_ce=10 Oe and H_ch=3 Oe, respectively. High frequency characteristics of the films show the films can work at 0.8 GHz with real permeability as high as 250.     

Fabrication, magnetism and high frequency application of exchange-coupled Fe65Co35±2-SiO1.7±0.2 granular films

A series of (Fe₆₅Co_35±2)_x-(SiO_1.7±0.2)_1−x nano-granular films with various metal volume fractions (x) were fabricated by rf sputtering. In a wide range, excellent soft magnetic properties have been achieved. In the x range from 0.7 to 0.48, the films exhibit small coercivity H_c not exceeding 4 Oe and high electrical resistivity ρ up to 1.15 × 10⁴ μΩ cm. And a minimum H_c value of 1.65 Oe was obtained for the sample of x = 0.57 with ρ = 2.86 × 10³ μΩ cm. At a frequency lower than 2.0 GHz, the real part μ′ of complex permeability of this sample is more than 170 and the FMR frequency is as high as 2.6 GHz, implying a high cut-off frequency for high frequency applications. With decreasing Fe₆₅Co_35±2 volume fraction, the resistivity of films increases remarkably and the grain size decreases obviously. At the same time, the coercivity H_c decreases with grain size decreasing, which is consistent with the conclusion resulted from random anisotropy model quoted by Herzer. Study on Henkel plots shows that intergranular ferromagnetic exchange coupling exists among grains and is important for realizing soft magnetic properties.     

High-frequency characteristics of CoFeVAlONb thin films

High-frequency characteristics of CoFeVAlONb thin films were studied. A thin film of Co_43.47Fe_35.30V_1.54Al_5.55O_9.93Nb_4.21 is observed to exhibit excellent magnetic properties; magnetic coercivity of 1.24 Oe, uniaxial in-plane anisotropy field of 66.99 Oe, and saturation magnetization of 19.8 kG. The effective permeability of the film is as high as 1089 and is stable up to 1.8 GHz, and with ferromagnetic resonance over 3 GHz. This film also has very high electrical resistivity of about 628 μΩ cm. These superior properties make it ideal for high-frequency magnetic applications.     

Magnetic properties of strontium hexaferrite films prepared by pulsed laser deposition

The magnetic properties of strontium hexaferrite (SrFe₁₂O₁₉) films fabricated by pulsed laser deposition on the Si(100) substrate with Pt(111) underlayer have been studied as a function of film thickness (50–700 nm). X-ray diffraction patterns confirm that the films have c-axis perpendicular orientation. The coercivities in perpendicular direction are higher than those for in-plane direction which indicates the films have perpendicular magnetic anisotropy. The coercivity was found to decrease with increasing of thickness, due to the increasing of the grain size and relaxation in lattice strain. The 200 nm thick film exhibits hexagonal shape grains of 150 nm and optimum magnetic properties of M_s=298 emu/cm³ and H_c=2540 Oe.     

Heat treatment effects on microstructure and magnetic properties of Mn-Zn ferrite powders

Mn-Zn ferrite powders (Mn_0.5Zn_0.5Fe₂O₄) were prepared by the nitrate-citrate auto-combustion method and subsequently annealed in air or argon. The effects of heat treatment temperature on crystalline phases formation, microstructure and magnetic properties of Mn-Zn ferrite were investigated by X-ray diffraction, thermogravimetric and differential thermal analysis, scanning electron microscopy and vibrating sample magnetometer. Ferrites decomposed to Fe₂O₃ and Mn₂O₃ after annealing above 550 °C in air, and had poor magnetic properties. However, Fe₂O₃ and Mn₂O₃ were dissolved after ferrites annealing above 1100 °C. Moreover, the 1200 °C annealed sample showed pure ferrite phase, larger saturation magnetization (M_s=48.15 emu g⁻¹) and lower coercivity (H_c=51 Oe) compared with the auto-combusted ferrite powder (M_s=44.32 emu g⁻¹, H_c=70 Oe). The 600 °C air annealed sample had the largest saturation magnetization (M_s=56.37 emu g⁻¹) and the lowest coercivity (H_c=32 Oe) due to the presence of pure ferrite spinel phase, its microstructure and crystalline size.     

Improvement of high-frequency characteristics of FeCoHfO/AlOx multilayered films

High-permeability magnetic films can enhance the inductance of thin-film inductors in dc-dc converters. The FeCoHfO/AlO_x multilayered films were fabricated by dc reactive magnetron co-sputtering. Inserting the AlO_x layers can decrease the anisotropic field of the FeCoHfO magnetic films, which was beneficial to raise the permeability of the FeCoHfO/AlO_x multilayered films. With this optimum configuration of a nine-layer structure [FeCoHfO (133 nm)/AlO_x (10 nm)]₉, low anisotropic field (H_K = 65 Oe) and high permeability (permeability over 170 at 30-50 MHz) were obtained. The permeability increased nearly six times from 30 (M1) to 175 (M9). The permeability was evidently improved by the employment multilayered coating.     

Effect of thickness on the microstructure and soft magnetic properties of CoFeHfO thin films

The thickness effects on the microstructure and soft magnetic properties of CoFeHfO thin films have been investigated in the range of 100–600 nm. There was a significant change in the coercivity (H_c) and the anisotropy (H_k) value with increasing film thickness, but the saturation induction and the resistivity almost remain unchanged. H_c and H_k reached a minimum value of 0.19 Oe and a maximum value of 50 Oe, respectively at 200 nm film thickness. The high saturation magnetic induction is 21 kG and resistivity is 500 μΩ cm. The origin of the changing H_c and H_k values is discussed in detail based on change of microstructure along with film thickness.     

Thickness-dependent magnetization reversal in CoZrNb amorphous films

Structure and magnetization of CoZrNb amorphous films prepared by DC magnetron sputtering have been studied as a function of film thickness (t), from 35 to 840 nm. Using comprehensive characterization, we show that the CoZrNb amorphous films possess a single phase and no nanocrystalline can be detected. The magnetic measurements indicate that the magnetization reversal of CoZrNb films is strongly dependent on t. That is, the coercivity is abruptly reduced to be lower than 4 Oe with t increasing from 35 to 105 nm, and then gradually decreases to ∼0.2 Oe as t increases. This coercivity transition versus t is accompanied by the strong magnetization reversal when t is larger than 105 nm. The results reveal that CoZrNb amorphous films with comparatively large film thickness (>100 nm) are suitable for sensors and anti-faked materials.     

On the comparison of the polarisation behaviour of exchange-biased AF/F NiMn/Fe37Co48Hf15 bi-layer and multi-layer films with increased ferromagnetic cut-off frequencies

Antiferromagnetic/ferromagnetic (AF/F) NiMn/Fe₃₇Co₄₈Hf₁₅ films were investigated with respect to their exchange bias, in-plane unidirectional anisotropy, polarisation and high frequency behaviour. After deposition, carried out by r.f. magnetron sputtering, the films were post-annealed for 4 h at 300 °C in a static magnetic field, in order to induce exchange-bias, which results in a unidirectional anisotropy. Dependent on the presence of a bi-layer or multi-layer sandwich structure the films show a different exchange-bias field-ferromagnetic inter-layer thickness behaviour with exchange-bias fields μ₀?H_eb between 2 and 10 mT. The in-plane uniaxial (single film) or unidirectional anisotropy fields μ₀*H_UF were between 4 and 18 mT. This results in a significant increase of the cut-off frequency in the GHz range in comparison to a single Fe₃₇Co₄₈Hf₁₅ film, which is shown by frequency-dependent permeability plots. High damping in the imaginary part of the permeability, i.e., high resonance line broadening could be observed for films with high coercivity μ₀*H_c of around 7 mT in the easy axis of magnetisation.     

The microstructure and magnetic properties of electrodeposited Co–Pt thin films on Ru buffer layer

For high-density magnetic recording media, this study examined the crystal structure and the texture of electrodeposited cobalt–platinum (Co–Pt) films on Ru buffer layer. A 15-nm-thick Co–Pt film exhibited very high out-of-plane coercivity and squareness, which were 6248 Oe and 0.89, respectively. The coercivity, H_c, of Co–Pt films grown on Ru buffer layer decreased significantly with increasing thickness, possibly due to the lattice misfit of 5.4% between Co–Pt and Ru, leading to the decrease of perpendicular magnetic anisotropy (PMA) of Co–Pt films as indicated by the observed hexagonal-closed-packed (HCP) (1 1¯ 0 1) plane of Co–Pt films. According to nano beam diffraction pattern (NBDP), however, Co–Pt film grown on Ru layer of HCP exhibited mixed HCP and FCC phases. Also, cross-sectional TEM image suggests that the high PMA may result from the columnar structure of physically isolated Co–Pt grains with the c-axis perpendicular to the film plane.     

The growth of soft magnetic FeNiN thin films under different experimental procedures

FeNiN thin films with good soft magnetic properties were synthesized on Si (1 0 0) substrates at 473 K by RF magnetron sputtering. The dependence of phase structure and magnetic properties on nitrogen partial pressure, nickel concentrations, film thickness and substrate temperature were systematically investigated. The phase evolution from α-(Fe,Ni)N to ξ-(Fe,Ni)₂N with increase of nitrogen partial pressure was seen. The addition of Ni caused FeNiN films to turn from BCC structure to FCC structure. Clear reproducible striped domains appeared at the film surfaces when X_Ni=19.6%, which is explained by the high enough perpendicular anisotropy and the small stress in the film. All films show smooth surfaces and good soft magnetic properties compared to corresponding FeN compounds. The magnetic properties depended dramatically on the phase structure. Optimum soft magnetic properties with H_C of <1 Oe are obtained between 5.0%?X_Ni?10.0%.     

Microfabrication and magnetoelectric properties of amorphous magnetic-tunnel-junctions with Co–Fe–B/Al–O/Co–Fe–B hardcore structure

Both single-barrier magnetic tunnel junctions (SBMTJs) and double-barrier magnetic tunnel junctions (DBMTJs) with an amorphous hardcore structure of Co₆₀Fe₂₀B₂₀/Al–O/Co₆₀Fe₂₀B₂₀ were microfabricated. A high TMR ratio of 102.2% at 4.2 K was observed in the SBMTJs after annealing at 265 °C for 1 h. High TMR ratio of 56.2%, low junction resistance-area product RS of 4.6 kΩ μm², small coercivity H_C=25 Oe, and relatively large bias-voltage-at-half-maximum TMR with the value V_1/2 greater than 500 mV at room temperature (RT) had been achieved in such Co–Fe–B SBMTJs. Whereas, high TMR ratio of 60% at RT and 89% at 30 K, low junction resistance-area product RS of 7.8 kΩ μm² at RT and 8.3 kΩ μm² at 30 K, low coercivity H_C=8.5 Oe at RT and H_C=14 Oe at 30 K, and relatively large bias-voltage-at-half-maximum TMR with the value V_1/2 greater than 1150 mV at RT had been achieved in the Co–Fe–B DBMTJs. Temperature dependence of the TMR ratio, resistance, and coercivity from 4.2 K to RT, and applied voltage dependence of the TMR ratio and resistance at RT for such amorphous MTJs were also investigated.     

Effect of film morphology on the magnetic properties for Nd-Fe-B thin films

The microstructure and magnetic properties of Nd-Fe-B thin films with a particulate structure were investigated. The nominal thickness of the Nd-Fe-B layer (t_N) was varied from 2 to 50 nm on a (0 0 1) Mo buffer layer. The films were grown with their c-axis perpendicular to the plane, and the morphology of the film with t_N=2 nm was shown to be particulate from an atomic force microscope image. The slope of the initial magnetization curve became steeper by increasing the t_N value in the initial magnetization curve, indicating that the film morphology composed of single domain particles changed to that of multi-domain particles with growth. The film with t_N=8 nm, which had a structure consisting of a mixture of single and multiple domain particles, showed the maximum value of the coercivity measured in the direction perpendicular to the film plane (H_c) as 19.5 kOe.