Effect of oxidation temperature on microstructure, mechanical behaviors and surface morphology of nanocomposite Ti-Cx-Ny thin films

Two nanocomposite Ti-C_x-N_y thin films, TiC_0.95N_0.60 and TiC_2.35N_0.68, as well as one pure TiN, were deposited at 500 °C on Si(1 0 0) substrate by reactive unbalanced dc-magnetron sputtering. Oxidation experiments of these films were carried out in air at fixed temperatures in a regime of 250-600 °C with an interval of 50 °C. As-deposited and oxidized films were characterized and analyzed using X-ray diffraction (XRD), microindentation, Newton's ring methods and atomic force microscopy (AFM). It was found that the starting oxidation temperature of nanocomposite Ti-C_x-N_y thin films was 300 °C irrespective of the carbon content; however their oxidation rate strongly depended on their carbon content. Higher carbon content caused more serious oxidation. After oxidation, the film hardness value remained up to the starting oxidation temperature, followed by fast decrease with increasing heating temperature. The residual compressive stress did not show a similar trend with the hardness. Its value was first increased with increase of heating temperature, and got its maximum at the starting oxidation temperature. A decrease in residual stress was followed when heating temperature was further increased. The film surface roughness value was slightly increased with heating temperature till the starting oxidation temperature, a great decrease in surface roughness was followed with further increase of heating temperature.     

Thermal stability and chemical bonding states of AlOxNy/Si gate stacks revealed by synchrotron radiation photoemission spectroscopy

Annealing-temperature dependence of the thermal stability and chemical bonding states of AlO_xN_y/SiO₂/Si gate stacks grown by metalorganic chemical vapor deposition (MOCVD) using new chemistry was investigated by synchrotron radiation photoemission spectroscopy (SRPES). Results have confirmed the formation of the AlN and AlNO compounds in the as-deposited samples. Annealing the AlO_xN_y samples in N₂ ambient in 600-800 °C promotes the formation of SiO₂ component. Meanwhile, there is no formation of Al-O-Si and Al-Si binding states, suggesting no interdiffusion of Al with the Si substrate. A thermally induced reaction between Si and AlO_xN_y to form volatile SiO and Al₂O is suggested to be responsible for the full disappearance of the Al component that accompanies annealing at annealing temperature of 1000 °C. The released N due to the breakage of the Al-N bonding will react with the SiO₂ interfacial layer and lead to the formation of the Si₃-N-O/Si₂-N-O components at the top of Si substrate. These results indicate high temperature processing induced evolution of the interfacial chemistry and application range of AlO_xN_y/Si gate stacks in future CMOS devices.     

Effect of nitrogen content on phase configuration, nanostructure and mechanical behaviors in magnetron sputtered SiCxNy thin films

SiC_xN_y thin films with different nitrogen contents were deposited by way of incorporation of different amounts of nitrogen into SiC_0.70 using unbalanced reactive dc magnetron sputtering method. Their phase configurations, nanostructures and mechanical behaviors were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, high-resolution transmission electron microscopy (HRTEM) and microindentation methods. The result indicated SiC_0.70 and all SiC_xN_y thin films exhibited amorphous irrespective of the nitrogen content. The phase configuration and mechanical behaviors of SiC_xN_y thin films strongly depended on nitrogen content. SiC_0.70 exhibited a mixture consisting of SiC, Si and a small amount of C. Incorporated nitrogen, on one hand linked to Si, forming SiN_x, on the other hand produced CN_x and C at the expense of SiC. As a result, an amorphous mixture consisting of SiC, SiN_x, C and CN_x were produced. Such effects were enhanced with increase of nitrogen content. A low hardness of about 16.5 GPa was obtained at nitrogen-free SiC_0.70. Incorporation of nitrogen or increase of nitrogen content increased the film hardness. A microhardness maximum of ∼29 GPa was obtained at a nitrogen content of 15.7 at.%. This value was decreased with further increase of N content, and finally a hardness value of ∼22 GPa was obtained at a N content of ∼25 at.%. The residual compressive stress was consistent with the hardness in the nitrogen content range of 8.6-25.3 at.%.     

Hf1−xSixOy dielectric films deposited by UV-photo-induced chemical vapour deposition (UV-CVD)

Hf_1−xSi_xO_y is an attractive candidate material for high-k dielectrics. We report in this work the deposition of ultra-thin Hf_1−xSi_xO_y films (0.1 ≤ x ≥ 0.6) on silicon substrate at 450 °C by UV-photo-induced chemical vapour deposition (UV-CVD) using 222 nm excimer lamps. Silicon(IV) and hafnium(IV) organic compounds were used as the precursors. Films from around 5 to 40 nm in thickness with refractive indices from 1.782 to 1.870 were grown. The deposition rate was found to be of 6 nm/min at a temperature of 450 °C. The physical, interfacial and electrical properties of hafnium silicate (Hf_1−xSi_xO_y) thin films were investigated by using X-ray photoelectron spectroscopy, ellipsometry, FT-IR, C-V and I-V measurements. XRD showed that they were basically amorphous, while Fourier transform infrared spectroscopy (FT-IR), clearly revealed Hf-O-Si absorption in the photo-CVD deposited Hf_1−xSi_xO_y films. Surface and interfacial properties were analysed by TEM and XPS. It is found that carbon content in the films deposited by UV-CVD is very low and it also decreases with increasing Si/(Si + Hf) ratio, as low as about 1 at.% at the Si/(Si + Hf) ratio of 60 at.%.     

A study of TaxC1−x coatings deposited on biomedical 316L stainless steel by radio-frequency magnetron sputtering

In this paper, Ta_xC_1−x coatings were deposited on 316L stainless steel (316L SS) by radio-frequency (RF) magnetron sputtering at various substrate temperatures (T_s) in order to improve its corrosion resistance and hemocompatibility. XRD results indicated that T_s could significantly change the microstructure of Ta_xC_1−x coatings. When T_s was <150 °C, the Ta_xC_1−x coatings were in amorphous condition, whereas when T_s was ≥150 °C, TaC phase was formed, exhibiting in the form of particulates with the crystallite sizes of about 15-25 nm (T_s = 300 °C). Atomic force microscope (AFM) results showed that with the increase of T_s, the root-mean-square (RMS) values of the Ta_xC_1−x coatings decreased. The nano-indentation experiments indicated that the Ta_xC_1−x coating deposited at 300 °C had a higher hardness and modulus. The scratch test results demonstrated that Ta_xC_1−x coatings deposited above 150 °C exhibited good adhesion performance. Tribology tests results demonstrated that Ta_xC_1−x coatings exhibited excellent wear resistance. The results of potentiodynamic polarization showed that the corrosion resistance of the 316L SS was improved significantly because of the deposited Ta_xC_1−x coatings. The platelet adhesion test results indicated that the Ta_xC_1−x coatings deposited at T_s of 150 °C and 300 °C possessed better hemocompatibility than the coating deposited at T_s of 25 °C. Additionally, the hemocompatibility of the Ta_xC_1−x coating on the 316L SS was found to be influenced by its surface roughness, hydrophilicity and the surface energy.     

Effect of nitrogen content on the properties of CrNxOyCz coating prepared by DC reactive magnetron sputtering

The CrN_xO_yC_z coatings were deposited by planar DC reactive magnetron sputtering onto AZ31 Mg alloy and high speed tool steel (HSTS) substrates at a substrate temperature of 200 °C. The effect of N₂ content on composition and structure of the CrN_xO_yC_z coatings was investigated. The structure of the CrN_xO_yC_z coatings was analyzed by a glancing angle X-ray diffraction (GXRD). The cross-section morphology and thickness of the CrN_xO_yC_z coatings were checked by a field emission scanning electron microscope (FESEM), and the composition profile and chemical state were carried out by an X-ray photoelectron spectroscopy (XPS). The experimental results showed that the structure and phase composition of the CrN_xO_yC_z coatings depended on N₂ content. The evolution of the structure of CrN_xO_yC_z coatings was consistent with CrN_x-based coatings, and the CrN_xO_yC_z coatings contained Cr₂O₃, CrO₂, CrO, Cr₃C₂, CrN_x (Cr, CrN, Cr₂N), as well as different chromium oxynitride. However, the carbide and oxynitride were oxidized after annealing.     

The effects of Si3N4 interlayer on the thermal stability and hardness of Ti/TiNx (x = 0.5-1) nanolayered coatings

The polycrystalline Ti/TiN_x multilayer films were deposited by magnetron sputtering, and the as-deposited multilayer coatings were annealed at 500-800 °C for 2-4 h in vacuum. We investigated the effects of annealing temperature and annealing time on the microstructural, interfacial, and mechanical properties of the polycrystalline Ti/TiN_x multilayer films. It was found that the hardness increased with annealing temperature. This hardness enhancement was probably caused by the preferred crystalline orientation TiN(1 1 1). The X-ray reflectivity measurements showed that the layer structure of the coatings could be maintained after annealing at 500 °C and the addition of the Si₃N₄ interlayer to Ti/TiN_x multilayer could improve the thermal stability to 800 °C.     

Low-voltage cathodoluminescence property of Li-doped Gd2−xYxO3:Eu

Cathodoluminescent (CL) spectra of Li-doped Gd_2−xY_xO₃:Eu³⁺ solid-solution (0.0?x?0.8) were investigated at low voltages (300 V-1 kV). The CL intensity is maximum for the composition of x=0.2 and gradually reduces with increasing the amount of substituted Y content. In particular, small (∼100 nm) particles of Li-doped Gd_1.8Y_0.2O₃:Eu³⁺ are obtained by firing the citrate precursors at only 650°C for 18 h. Relative red-emission intensity at 300 V of this phosphor is close to 180% in comparison with that of commercial red phosphor Y₂O₃:Eu³⁺. An increase of firing temperature to 900°C results in 400-600 nm sized spherical particles. At low voltages (300-800 V), the CL emission of 100 nm sized particles is much stronger than that of 400-600 nm sized ones. In contrast, the larger particles exhibit the higher CL emission intensity at high voltages (1-10 kV). Taking into consideration small spherical morphology and effective CL emission, Li-doped Gd_1.8Y_0.2O₃:Eu³⁺ appears to be an efficient phosphor material for low voltage field emission display.     

Enhanced formation of periodic arrays of low-resistivity NiSi nanocontacts on (0 0 1)Si0.7Ge0.3 by nanosphere lithography with a thin interposing Si layer

In this study, we demonstrated significant enhancement of the formation of low-resistivity NiSi nanocontacts with controlled size on (0 0 1)Si_0.7Ge_0.3 substrates by combining the nanosphere lithography with the use of a new Ni/a-Si bilayer nanodot structure. Low-resistivity NiSi with an average size of 78 nm was observed to be the only silicide phase formed in samples annealed at 350-800 °C. The presence of the interposing Si layer with appropriate thickness was found to effectively prevent Ge segregation and maintain the interface stability in forming NiSi nanocontacts on (0 0 1)Si_0.7Ge_0.3. As the annealing temperature was increased to 900 °C, amorphous SiO_x nanowires were observed to grow from silicide nanocontact regions. The NSL technique in conjunction with a sacrificial Si interlayer process promises to be applicable in fabricating periodic arrays of other low-resistivity silicide nanocontacts on Si_1−xGe_x substrates without complex lithography.     

TiN和Ti1-xSixNy薄膜的微观结构分析

使用x射线衍射(XRD)、x射线光电子谱(XPS)、高分辨透射电子显微镜(HRTEM)和原子力显微镜（AFM）多种观测手段分析了TiN薄膜和Ti_1-xSi_xN_y纳米复合薄膜的微观结构.实验分析证明Ti_1-xSi_xN_y薄膜是由直径为3—5nm的纳米晶TiN和非晶Si₃N₄相构成，并且Ti_1-xSi_{x关键词： 纳米复合薄膜 自由能 表面粗糙度 TiN 1-x}Si_xN_y')" href="#">Ti_1-xSi_xN_y     

Generation of optically active states in a-SiNx by thermal treatment

Amorphous silicon nitride (a-SiN_x) films were deposited using plasma-enhanced chemical-vapor deposition (PECVD) and subsequently, thermal annealing processes were performed at 700-1000 °C in the ultra-high vacuum (UHV) condition. A strong photoluminescence (PL) peak induced by luminescent defect centers was observed at 710 nm for the as-deposited sample. When the sample was annealed at 700-1000 °C, the PL peak intensity became about 3-12 times stronger with no shift of the PL peak. To investigate the origin of the change in PL peak intensity after the thermal annealing, Si 2p and N 1s core-level spectra were systematically analyzed by high-resolution photoemission spectroscopy (HRPES) using synchrotron radiation. In particular, N 1s spectra were decomposed with three characteristic nitrogen-bonding states. It is revealed that the nitrogen bonding state with N-Si and NSi₂ configurations (denoted as N3) contributes mainly to the change in PL peak intensity. We note that luminescent nitrogen related defect centers such as N₄⁺ and N₂° are localized in the state N3. Detailed analysis of the experimental results shows that the state N3 is located in the interface bounded by the region of the nano-sized stoichiometric silicon nitride Si₃N₄ (denoted as N1) and is considerably influenced by the thermal annealing, which is an appropriate process to cause strong photoluminescence of the related samples as mentioned above.     

High-throughput characterization of BixY3−xFe5O12 combinatorial thin films by magneto-optical imaging technique

Bi_xY_3−xFe₅O₁₂ thin films have been grown on GGG (Gd₃Ga₅O₁₂) (1 1 1) substrates by the combinatorial composition-spread techniques under substrate temperature (T_sub) ranging from 410 to 700 °C and O₂ pressure of 200 mTorr. In order to study the effect of substrates on the deposition of Bi_xY_3−xFe₅O₁₂ thin films, garnet substrates annealed at 1300 °C for 3 h were also used. Magneto-optical properties were characterized by our home-designed magneto-optical imaging system. From the maps of Faraday rotation angle θ_F, it was evident that the Faraday effect appears only when T_sub = 430-630 °C. θ_F reaches to the maximum value (∼6°/μm, λ = 632 nm) at 500 °C, and is proportional to the Bi contents. XRD and EPMA analyses showed that Bi ions are easier to substitute for Y sites and better crystallinity is obtained for annealed substrates than for commercial ones.     

Combustion synthesis and luminescence properties of NaY1−xEux(WO4)2 phosphors

The red phosphors NaY_1−xEu_x(WO₄)₂ with different concentrations of Eu³⁺ were synthesized via the combustion synthesis method. As a comparison, NaEu(WO₄)₂ was prepared by the solid-state reaction method. The phase composition and optical properties of as-synthesized samples were studied by X-ray powder diffraction and photoluminescence spectra. The results show that the red light emission intensity of the combustion synthesized samples under 394 nm excitation increases with increase in Eu³⁺ concentrations and calcination temperatures. Without Y ions doping, the emission spectra intensity of the NaEu(WO₄)₂ phosphor prepared by the combustion method fired at 900 °C is higher than that prepared by the solid-state reaction at 1100 °C. NaEu(WO₄)₂ phosphor synthesized by the combustion method at 1100 °C exhibits the strongest red emission under 394 nm excitation and appropriate CIE chromaticity coordinates (x=0.64, y=0.33) close to the NTSC standard value. Thus, its excellent luminescence properties make it a promising phosphor for near UV InGaN chip-based red-emitting LED application.     

Luminescent properties of HTP AgGd1−xW2O8:Eux and AgGd1−x(W1−yMoy)2O8:Eux phosphor for white LED

Intense red phosphors, AgGd_1−xEu_x(W_1−yMo_y)₂O₈ (x=0.0-1.0, y=0.0-1.0), have been synthesized through traditional solid-state reaction and characterized by X-ray diffraction (XRD) and photoluminescence (PL). XRD results reveal that AgGd_1−xEu_xW₂O₈ synthesized at 1000 °C has a tetragonal crystal structure, which is named as high temperature phase (HTP) AgGdW₂O₈. All phosphors compositions with Eu³⁺ show red and green emission on excitation either in the charge-transfer or Eu³⁺ levels. Analysis of the emission spectra with different Eu³⁺ concentrations reveal that the optimum dopant concentration for Eu³⁺ is x=0.6 in the HTP AgGd_1−xEu_xW₂O₈ (x=0.0-1.0). Studies on the AgGd_0.4Eu_0.6(W_1−yMo_y)₂O₈ (y=0.0-1.0) and AgGd_1−xEu_x(W_0.7Mo_0.3)₂O₈ (x=0.0-1.0) show that the emission intensity is maximum for compositions with y=0.3 and x=0.5, respectively, and a decrease in emission intensity is observed for higher y or x values. The Mo⁶⁺ and Eu³⁺ co-doped AgGd(WO₄)₂ phosphors show higher emission intensity in comparison with the singly Eu³⁺-doped AgGd(WO₄)₂ in UV region. The intense emission of the tungstate/molybdate phosphors under 394 and 465 nm excitations, respectively, suggests that these materials are promising candidates as red-emitting phosphors for near-UV/blue GaN-based white LED for white light generation.     

Luminescence investigation of red phosphors Ca0.54Sr0.34−1.5xEu0.08Smx(MoO4)y (WO4)1−y for UV-white LED device

Ca_0.54Sr_0.34−1.5xEu_0.08Sm_x(MoO₄)_y (WO₄)_1−y red phosphors were prepared by solid-state reaction using Na⁺ as a charge compensator for light-emitting diodes (LED). The effects of Na⁺ concentration, synthesis temperature, reaction time and Eu³⁺ concentration were studied for the properties of luminescence and crystal structure of red phosphors. The results show that the optimum reaction condition is 6%, 900 °C, 2 h and 8%. The photoluminescence spectra show that red phosphors are effectively excited at 616 nm by 292, 395 and 465 nm. The wavelengths of 465 nm nicely match the widely applied emission wavelengths of blue LED chips.     

Role of carbon in the formation of hard Ge1−xCx thin films by reactive magnetron sputtering

We have deposited germanium carbide (Ge_1−xC_x) films on Si(1 0 0) substrate via radio-frequency (RF) reactive magnetron sputtering in a CH₄/Ar mixture discharge, and explored the effects of carbon content (x) on the chemical bonding and hardness for the obtained films. We find that x significantly influences the chemical bonding, which leads to a pronounced change in the hardness of the film. To reveal the relationship between the chemical bonding and hardness, first-principles calculations have been carried out. It is shown that as x increases from 0 to 0.33, the fraction of sp³ C-Ge bonds in the film increases at the expense of Ge-Ge bonds, which promotes formation of a strong covalently bonded network, and thus enhances the hardness of the film. However, as x further increases from 0.33 to 0.59, the fraction of sp³ C-Ge bonds in the film gradually reduces, while that of sp³ C-H and graphite-like sp² C-C bonds increases, which damages the compact network structure, resulting in a sharp decrease in the hardness. This investigation suggests that the medium x (0.17<x<0.40) is most favorable to the preparation of hard Ge_1−xC_x films due to the formation of dominant sp³ C-Ge bonds.     

Effect of N content on phase configuration, nanostructure and mechanical behaviors in Ti-Cx-Ny thin films

Ti-C_x-N_y thin films with different nitrogen contents were deposited by way of incorporation of different amounts of nitrogen into TiC_1.02 using unbalanced reactive unbalanced dc magnetron sputtering method. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and microindentation methods were used to investigate their phase configurations, nanostructures and mechanical behaviors in order to investigate their dependences on nitrogen content. The result indicated that the nitrogen content had a significant effect on phase configuration, nanostructure and mechanical behaviors of Ti-C_x-N_y thin films. The nitrogen-free TiC_1.02 films exhibited a polycrystallite with nano-grains. On one hand, incorporated nitrogen substituted C in TiC_1.02, producing Ti(C,N), and subsequently linked to the substituted C, forming C-N. On the other hand, the substituted C lined to each other, forming C-C. As a result, nanocomposite thin films consisting of nanocrystalline Ti(C,N) and amorphous (C, C-N) were produced. With further incorporation of nitrogen more C was substituted, accompanying with formation of more amorphous matrices and decrease of size of nanocrystalline Ti(C,N). The trend was enhanced with further increase of nitrogen content. A microhardness maximum of ∼58 GPa was obtained in nitrogen-free TiC_1.02 thin films. This value was linearly decreased with incorporation of N or increase of N content, and finally a hardness value of about 28 GPa was followed at a N content of ∼25 at.%. Both elastic modulus and residual compressive stress values exhibited similar trends.     

The effect of different temperature annealing on phase relation of LaFe11.5Si1.5 and the magnetocaloric effects of La0.8Ce0.2Fe11.5−xCoxSi1.5 alloys

The phase relation of LaFe_11.5Si_1.5 alloys annealed at different high-temperature from 1223 K (5 h) to 1673 K (0.5 h) has been studied. The powder X-ray diffraction (XRD) patterns show that large amount of 1:13 phase begins to form in the matrix alloy consisting of α-Fe and LaFeSi phases when the annealing temperature is 1423 K. In the temperature range from 1423  to 1523 K, α-Fe and LaFeSi phases rapidly decrease to form 1:13 phase, and LaFeSi phase is rarely observed in the XRD pattern of LaFe_11.5Si_1.5 alloy annealed at 1523 K. With annealing temperature increasing from 1573  to 1673 K, the LaFeSi phase is detected again in the LaFe_11.5Si_1.5 alloy, and there is La₅Si₃ phase when the annealing temperature reaches 1673 K. There almost is no change in the XRD patterns of LaFe_11.5Si_1.5 alloys annealed at 1523 K for 3-5 h. According to this result, the La_0.8Ce_0.2Fe_11.5−xCo_xSi_1.5 (0≤×≤0.7) alloys are annealed at 1523 K (3 h). The analysis of XRD patterns shows that La_0.8Ce_0.2Fe_11.5xCo_xSi_1.5 alloys consist of the NaZn₁₃-type main phase and α-Fe impurity phase. With the increase of Co content from x=0 to 0.7, the Curie temperature T_C increases from 180 to 266 K. Because the increase of Co content can weaken the itinerant electron metamagnetic transition, the order of the magnetic transition at T_C changes from first to second-order between x=0.3 and 0.5. Although the magnetic entropy change decreases from 34.9 to 6.8 J/kg K with increasing Co concentration at a low magnetic field of 0-2 T, the thermal and magnetic hysteresis loss reduces remarkably, which is very important for the magnetic refrigerant near room temperature.     

Phase stability,elastic, electronic,thermal and optical properties of Ti3Al1−xSixC2 (0≤x≤1): First principle study

The structural parameters with stability upon Si incorporation and elastic, electronic, thermodynamic and optical properties of Ti₃Al_1−xSi_xC₂ (0≤x≤1) are investigated systematically by the plane wave pseudopotential method based on the density functional theory (DFT). The increase of some elastic parameters with increasing Si-content renders the alloys to possess higher compressive and tensile strength. The Vickers hardness value obtained with the help of Mulliken population analysis increases as x is increased from 0 to 1. The solid solutions considered are all metallic with valence and conduction bands, which have a mainly Ti 3d character, crossing the Fermi level. The temperature and pressure dependences of bulk modulus, normalized volume, specific heats, thermal expansion coefficient, and Debye temperature are all obtained through the quasi-harmonic Debye model with phononic effects for T=0−1000 K and P=0−50 GPa. The obtained results are compared with other results available. Further an analysis of optical functions for two polarization vectors reveals that the reflectivity is high in the visible–ultraviolet region up to ∼10.5 eV region showing promise as a good coating material.     

Preparation of five-layered Si/SixGe1−x nano-films by RF helicon magnetron sputtering

Five-layered Si/Si_xGe_1−x films on Si(1 0 0) substrate with single-layer thickness of 30 nm, 10 nm and 5 nm, respectively were prepared by RF helicon magnetron sputtering with dual targets of Si and Ge to investigate the feasibility of an industrial fabrication method on multi-stacked superlattice structure for thin-film thermoelectric applications. The fine periodic structure is confirmed in the samples except for the case of 5 nm in single-layer thickness. Fine crystalline Si_xGe_1−x layer is obtained from 700 °C in substrate temperature, while higher than 700 °C is required for Si good layer. The composition ratio (x) in Si_xGe_1−x is varied depending on the applied power to Si and Ge targets. Typical power ratio to obtain x = 0.83 was 7:3, Hall coefficient, p-type carrier concentration, sheet carrier concentration and mobility measured for the sample composed of five layers of Si (10 nm)/Si_0.82Ge_0.18 (10 nm) are 2.55 × 10⁶ /°C, 2.56 × 10¹² cm⁻³, 1.28 × 10⁷ cm⁻², and 15.8 cm⁻²/(V s), respectively.