Dependence of mark size on STM pulse voltage in heat-assisted magnetic probe recording on a cobalt–nickel–platinum thin film

This paper presents a method of heat-assisted magnetic probe recording on perpendicular medium. Electrical current from scanning tunneling microscope (STM) is employed as the major heating source. Recording medium is a strongly-coupled CoNi/Pt multilayered film. Pulses with amplitude of 3–7 V and duration of 200 ns were applied between the STM tip and the recording medium. Experiments show that magnetic marks with an average size of 184 nm were formed for voltages above 4 V. A model is built to simulate the formation of magnetic domains in the processing of probe-based magnetic recording. Simulation results agree with experiments well.     

Low capacitance ESD protection circuits for GaAs RF ICs

We present a novel electrostatic discharge (ESD) protection circuit for GaAs radio frequency (RF) integrated circuits (ICs), which are targeted for 10 Gb/s fiber-optic communication applications. The robustness, parasitic impedance, and loading effect of the new ESD protection circuit are studied and compared with the conventional diode-based ESD protection technique. Two versions of this type of ESD protection circuit were fabricated with a 60-GHz InGaP heterojunction bipolar transistor (HBT) technology. These two circuits can withstand, respectively, 2700 and 5000 V human body model (HBM) ESD stress and provide a similar level of ESD protection to RF ICs. The corresponding impedances of the off state are represented by an equivalent shunt capacitance and shunt resistance of 0.22 pF and 500 Ω, and 0.5 pF and 250 Ω, at 10 GHz. This ESD protection circuit can protect the 10 Gb/s RF ICs against much higher level ESD stress than conventional diode-based ESD protection circuits even with smaller size.     

Annealing effects and degradation mechanism of NiFe/Cu GMR multilayers

Structural, transport and magnetic properties of sputtered Ni₈₀Fe₂₀/Cu multilayers showing giant magnetoresistance (GMR) were studied using X-ray reflectometry and diffraction, transport measurements, ferromagnetic resonance (FMR), and magneto-optical Kerr effect. In particular, mechanisms of the GMR degradation at elevated temperatures were investigated. Multilayers with an individual layer thickness of 2 nm show a sharp drop of the GMR after annealing at about 250°C. Whereas below this temperature grain growth and defect reduction contribute to a partial improvement of the GMR, above ∼250°C interdiffusion between Ni and Cu appears to lead to layer intermixing and to the degradation of transport and magnetic properties. Moreover, the initial 〈1 1 1〉 texture sharpens, and strong tensile stresses arise in the layer stack. We correlated the structural alterations to changes in the magnetic properties such as the strength of the antiferromagnetic coupling (bilinear and biquadratic) and the magnetic anisotropy. Above 250°C an increasing magnetic inhomogeneity of the Permalloy layers can be inferred from the FMR linewidth broadening.     

Giant magnetoresistance in the Ge-rich magnetocaloric compound,Gd5(Si0.1Ge0.9)4

We have measured the zero-field electrical resistivity in the temperature range 5–295 K and magnetoresistance in magnetic fields of up to 12 T of Gd₅(Si_0.1Ge_0.9)₄. The resistivity changes drastically at the magnetostructural first-order transition (T_C≅80 K on heating). This transition can be induced reversibly by the application of an external magnetic field above T_C, producing a concomitant giant magnetoresistance (GMR) effect, Δρ/ρ≅−50%. This study demonstrates that (in addition to giant magnetocaloric and magnetoelastic effects) GMR can be tuned between ∼20 and ∼290 K in Gd₅(Si_xGe_1−x)₄ with x⩽0.5 by simply adjusting the Si : Ge ratio.     

Transfer impedance and effectiveness of SMA receptacle for wideband measurement of discharge current due to human ESD

In order to investigate the effectiveness of an SMA receptacle as wideband measurement electrode for human ESD, we derived the transfer impedance of a 50-Ω SMA receptacle, and measured its frequency characteristics from 300 kHz to 20 GHz. With a 12-GHz digital oscilloscope, measurement of discharge currents through a hand-held metal bar from a charged human was made, and thereby the injected currents on the SMA receptacle were reconstructed from the measured transfer impedance. The results show that at a charge voltage of 1500 V the reconstructed current waveform agrees well with the observed voltage waveform divided by 50 Ω.     

Perpendicular magnetization in Fe/Ni bilayers on GaAs(0 0 1)

Following the concept of spin-injection into a semiconductor-based device, a ferromagnetic element (like a GMR multilayer structure) can be used as a spin filter. A high spin-polarization of the electrons can be realized by the preparation of a monocrystalline multilayer structure consisting of ultrathin films of a high magnetic polarization. In the case of ultrathin films, the manipulation of the easy-axis of magnetization is possible, by changing the anisotropy terms contributing to the effective anisotropy of the structure. We report on the structural and magnetic properties of Ni/Fe and Fe/Ni bilayers epitaxially grown on GaAs(0 0 1). By a proper choice of Fe and Ni sequences (Fe/Ni/GaAs) and their thickness (up to 3 ML of Fe on the top of Ni), the rotation of magnetization from the in-plane to the out-of-plane direction was achieved.     

Investigation on different ESD protection strategies devoted to 3.3 V RF applications (2 GHz) in a 0.18 μm CMOS process

ESD protection for radio frequency (RF) applications must deal with good ESD performance, minimum capacitance, zero series resistance and good capacitance linearity. In order to fulfill these requirements, different ESD protection strategies for RF applications have been investigated in a 0.18 μm CMOS process. This paper compares different ESD protection devices and shows that a suitable ESD performance target for RF applications (200 fF max, 2 kV HBM) can be reached with a diode network scheme. The optimization of the diodes is then a key point which is detailed. A trade-off has to be found between the ESD performance, the voltage drop during ESD and the parasitic capacitance. Poly as well as shallow trench isolation (STI) bounded diodes have been studied and it appears clearly that a solution based on poly bounded diodes is the best choice.     

Structural origin of perpendicular magnetic anisotropy in Ni–W thin films

The magnetic properties and microstructure of electrodeposited Ni–W thin films (0–11.7 at% W in composition) were studied. The film structures were divided into three regions: an FCC nanocrystalline phase (0–2 at% W), a transition region from FCC nanocrystalline to amorphous phase (2–7 at% W), and an amorphous phase (>7 at% W). In the transition region, (4–5 at% W) films with perpendicular magnetic anisotropy (PMA) were found. The saturation magnetization, magnetic anisotropy field, perpendicular magnetic anisotropy and perpendicular coercivity for a typical Ni–W film (4.5 at% W) were 420 kA/m, 451 kA/m, 230 kJ/m and 113 kA/m, respectively. The microstructure of Ni–W films with PMA is composed of isolated columnar crystalline grains (27–36 nm) with the FCC phase surrounded by the Ni–W amorphous phase. The appearance of the interface between the magnetic core of Ni crystalline grains and the Ni–W non-magnetic boundary layer seems to be the driving mechanism for the appearance of PMA. The origin of PMA in Ni–W films is mainly attributed to the magnetoelastic anisotropy associated with in-plane internal stress and positive magnetostriction. The secondary source of PMA is believed to be the magnetocrystalline anisotropy of 〈1 1 1〉 columnar grains and its shape magnetic anisotropy. It is concluded that Ni–W electrodeposited films (4–5 at% W) may be applicable for perpendicular magnetic recording media.     

Readout circuit with dual switching mode design for infrared focal plane arrays

The paper proposes a readout circuit architecture with adjustable integration time for dual-band infrared detectors. The readout circuit uses direct injection to be combined with a capacitive trans-impedance amplifier. The amplifier is sharing between two pixels to reduce the complexity of the readout circuit. The proposed device reduces power consumption and area overhead compared to traditional structures. An experimental chip was fabricated using the TSMC 0.35 μm 2P4 M 5 V process. The resulting unit pixel layout area is 40 μm × 40 μm with input photocurrent ranging from 0.11 pA to 50 nA. CTIA mode is applicable from 0.11 pA to 10 nA, while DI mode is applicable from 3.3 pA to 50 nA. The maximum operating frequency of the chip are 4 MHz. The CTIA output swing is 1.2 V, the DI output swing is 2 V. The signal to noise ratio of the readout circuit is 65 dB and power consumption is less than 9.6 mW.     

Soft ESD phenomena in GMR heads in the HDD manufacturing process

GMR (giant magnetoresistive) heads used for HDD (hard disk drives) are very sensitive to ESD (electrostatic discharge). Some kinds of ESD damages will cause soft magnetic degradations of head performance with a progressive nature. We report examples of head degradations by ESD damages as well as other damages due to head scratches, electro-migration effects and corrosion of GMR stack. It is usually very difficult to distinguish these phenomena explicitly by QST (quasistatic tester) and spinstand measurement test. We show that head scratches can cause damages similar to damages caused by ESD and that re-magnetization has certain potential to correct the damaged magnetic structure caused by such scratches.     

A DFT study of substrate effect on the magnetism of V(001) surface

The effect of isoelectric transition metals (TM) Nb and Ta on the magnetism of the V(001) surface is investigated from first principles using Density functional theory (DFT), with the generalized gradient approximation (GGA). Ferromagnetic (FM) moments of 2.5 μ_B and 2.2 μ_B are obtained for the relaxed surface V monolayer (ML) in the V/Nb(001) and the V/Ta(001) systems respectively, at T = 0 K. The values are almost twice of those obtained with Mo and W of group VIB and can be attributed to the comparatively smaller bandwidths of the substrates Nb and Ta. Small induced magnetic moments are present on the Nb and Ta interfacial layers, which are coupled anti-ferromagnetically with the V ML.     

Research on the possibility of ignition of materials by electrostatic discharge in pure oxygen environment at different pressures

In spacecraft environments, spacesuits materials such as textiles, leather, or other materials are used in a pure oxygen environment. The materials are in serious risk of being ignited by electrostatic discharge (ESD) and may cause fire and even disasters or death of astronauts. In this paper, a well sealed chamber was first developed for ignition test. Then, ignition tests of four textiles and leather materials were carried out under oxygen pressures of 42 kPa, 101 kPa and 142 kPa using different ESD models. It is concluded that the materials are more easily ignited at higher oxygen pressure.     

A buffer direct injection and direct injection readout circuit with mode selection design for infrared focal plane arrays

This paper proposes a solution to the excessive area penalty associated with traditional buffer direct injection (BDI) for single pixel. The proposed solution reduces the area and power consumption of BDI to combine the direct injection (DI) within a shared architecture, while a dual-mode readout circuit expands the functionality and performance of the array readout circuit of infrared sensor. An experimental array of 10 × 8 readout circuits was fabricated using TSMC 2P4M 0.35 μm 5 V technology. Measurements were obtained using a main clock with a frequency of 3 MHz and power consumption of 9.94 mW. The minimum input current was 119 pA in BDI and 1.85 pA in DI. The signal swing was 2 V, the root mean square noise voltage was 1.84 mV, and the signal-to-noise ratio was 60 dB. This approach is applicable to mid- and long-band sensors to increase injection efficiency and resolution.     

Width and temperature dependence of lithography-induced magnetic anisotropy in (Ga,Mn)As wires

In-plane magnetic anisotropy of 40-μm-long (Ga,Mn)As wires with different widths (0.4, 1.0, and 20 μm) has been investigated between 5 and 75 K by measuring anisotropic magneto-resistance (AMR). The wires show in-plane 〈1 0 0〉 cubic and [−1 1 0] uniaxial anisotropies, and an additional lithography-induced anisotropy along the wire direction in narrow wires with width of 0.4 and 1.0 μm. We derive the temperature dependence of the cubic, uniaxial, and lithography-induced anisotropy constants from the results of AMR, and find that a sizable anisotropy can be provided by lithographic means, which allows us to control and detect the magnetization reversal process by choosing the direction of the external magnetic fields.     

Magnetism in V/Co(0001) hcp interfaces: Density functional calculations

We investigate the magnetic properties of V/Co interfacial systems and adatoms within the density functional theory taking into account the structural relaxation. The hybridization between the V and Co orbitals results in a V magnetic moment induced by the surrounding Co atoms. The ground state V magnetic moment magnitudes range from ~ 0 to 2.17 μB/atom depending on the specific local environment.     

Single-photon and three-photon absorption induced whispering-gallery mode lasing in ZnO micronails

The ZnO micronails were synthesized by the vapor phase transport method. The heads of the micronails show hexagonal disk structure which is suitable for the whispering-gallery mode lasing microcavity. Under the excitation of a nanosecond pulse at 355 nm, the single-photon absorption induced lasing was stimulated in the micronail with the head diameter of 3.0 μm, the whispering gallery mode and Fabry-Pérot mode lasing were investigated. Under the excitation of femtosecond laser pulses at 804 nm, the second harmonic generation and the three-photon absorption induced photoluminescence were observed from a bulk of micronails, then an individual micronail with the diameter of 9.1 μm was employed to realize the three-photon absorption induced whispering-gallery mode lasing.     

Study of the sensing characteristics of light emitting conjugated polymer MEH-PPV for nitro aromatic explosives

The sensing characteristics of light emitting conjugated polymer MEH-PPV for nitro aromatic explosives were studied in this paper. MEH-PPV was deposited on the surface of U-shaped plastic optical fiber (POF) using dip-coating techniques. The influences of MEH-PPV concentrations and bending radius of the U-shaped sensor heads on the sensitivity of the sensor were studied. The sensor was found to be most sensitive to TNT range from 0 to 4 mg/100 ml and the sensitivity was about 4 ng/ml. The limit of detections was around 1–10 ng/ml. It was also found that the conjugated polymer changes color from red to brownish black when the sensor head was put into TNT solution which provided high selectivity for sensing TNT at room temperature.     

A thin film magnetic field sensor of sub-pT resolution and magnetocardiogram (MCG) measurement at room temperature

We developed a very sensitive high-frequency carrier-type thin film sensor with a sub-pT resolution using a transmission line. The sensor element consists of Cu conductor with a meander pattern (20 mm in length, 0.8 mm in width, and 18 μm in thickness), a ground plane, and amorphous CoNbZr film (4 μm in thickness). The amplitude modulation technique was employed to enhance the magnetic field resolution for measurement of the high-frequency field (499 kHz), a resolution of 7.10×10^?13 T/Hz^1/2 being achieved, when we applied an AC magnetic field at 499 kHz. The phase detection technique was applied for measurement of the low frequency field (around 1 Hz). A small phase change was detected using a dual mixer time difference method. A high phase change of 130°/Oe was observed. A magnetic field resolution of 1.35×10^?12 T/Hz^1/2 was obtained when a small AC field at 1 Hz was applied. We applied the sensor for magnetocardiogram (MCG) measurement using the phase detection technique. We succeeded in measuring the MCG signal including typical QRS and T waves, and compared the MCG with a simultaneously obtained conventional electrocardiogram (ECG) signal.     

Prospective motion correction for 3D pseudo-continuous arterial spin labeling using an external optical tracking system

Head motion is an unsolved problem in magnetic resonance imaging (MRI) studies of the brain. Real-time tracking using a camera has recently been proposed as a way to prevent head motion artifacts. As compared to navigator-based approaches that use MRI data to detect and correct motion, optical motion correction works independently of the MRI scanner, thus providing low-latency real-time motion updates without requiring any modifications to the pulse sequence. The purpose of this study was two-fold: 1) to demonstrate that prospective optical motion correction using an optical camera mitigates artifacts from head motion in three-dimensional pseudo-continuous arterial spin labeling (3D PCASL) acquisitions and 2) to assess the effect of latency differences between real-time optical motion tracking and navigator-style approaches (such as PROMO). An optical motion correction system comprising a single camera and a marker attached to the patient's forehead was used to track motion at a rate of 60 fps. In the presence of motion, continuous tracking data from the optical system was used to update the scan plane in real-time during the 3D-PCASL acquisition. Navigator-style correction was simulated by using the tracking data from the optical system and performing updates only once per repetition time. Three normal volunteers and a patient were instructed to perform continuous and discrete head motion throughout the scan. Optical motion correction yielded superior image quality compared to uncorrected images or images using navigator-style correction. The standard deviations of pixel-wise CBF differences between reference and non-corrected, navigator-style-corrected and optical-corrected data were 14.28, 14.35 and 11.09 mL/100 g/min for continuous motion, and 12.42, 12.04 and 9.60 mL/100 g/min for discrete motion. Data obtained from the patient revealed that motion can obscure pathology and that application of optical prospective correction can successfully reveal the underlying pathology in the presence of head motion.     

Magnetic properties of rare-earth transition metal aluminides R6T4Al43 with Ho6Mo4Al43-type structure

The magnetic properties of 53 aluminium-rich intermetallic compounds R₆T₄Al₄₃ with R=rare-earth elements and T=Ti, V, Nb, Ta, Cr, Mo, W were investigated using polycrystalline samples and a SQUID magnetometer in the temperature range from 2 to 300 K with magnetic flux densities up to 5.5 T. The yttrium and lutetium compounds are Pauli paramagnetic, indicating that the transition metal atoms do not carry magnetic moments. The samarium compounds show van Vleck behavior and antiferromagnetic order with Néel temperatures of less than 12 K. Of these Sm₆Ti₄Al₄₃ becomes metamagnetic. The ytterbium compounds show a mixed or intermediate valent behavior and no magnetic order down to 2 K. All other compounds obey the Curie–Weiss law above 30 K. Their effective magnetic moments correspond to the theoretical moments of the rare-earth ions. They show ferromagnetic or metamagnetic behavior with ordering temperatures all below 20 K. The magnetization curves of most compounds (recorded up to 5.5 T) reach about 50% of the theoretical magnetization already at 0.5 T. The gadolinium compounds are exceptional in that they reach at 0.5 T only about 10% of their theoretical magnetization. The crystal structures of the isotypic compounds Yb₆V₄Al₄₃ and Yb₆Ta₄Al₄₃ were refined from single-crystal X-ray data.