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1.
The rigorous treatment of relaxation for the dipolar-multipolarAX spin system (I=1/2,S>1/2) in the presence of the dipolarI-S coupling, anisotropy chemical shift and quadrupolar interaction ofS spin is proposed. The calculations of the spin evolution under the relaxation Hamiltonian are based on the second-order time-dependent perturbation theory and are carried out in the operator representation. For this task the double commutator identities of the type [[I ±S z n ,A q μp ]A ?q μp ] and [[I zS z n ,A q μp ]A ?q μp. ] are derived. The fist-order differential equations for the evolution of longitudinal two-spin orderI zS z n , z=magnetization ofS spinS z n and coherences <I ±S z n > in the spin systemIS with scalar coupling between spin 1/2 and quadrupolar spinS>1/2 were obtained. These equations are used to get equations for the evolutions of each component of the multiplet structure of spinI. The imaginary part of the cross-correlation spectral density function and indirect spin-spin coupling Hamiltonian are taken into account. Equations for the longitudinal components of theI spin spectrum in the presence of cross-correlation effects were obtained also. Longitudinal and transverse relaxation times and cross-relaxation times in the presence of cross-correlation D-CSA, Q-CSA, Q-D were analyzed.  相似文献   

2.
For a single-band conductor where two or more scattering mechanisms are present, each giving rise to a characteristic thermoelectric powerS n and a electrical resistivity? n the resultant thermoelectric powerS is given, as a first approximation, by\(S = \sum\limits_n {\varrho _n S_n /\varrho } \). Denoting withS 0 the characteristic thermoelectric power due to the scattering of the conduction electrons by the boundary atoms, and withS i and? i the resultant thermoelectric power and electrical resistivity arising from all other scattering mechanisms, one may writeS=S 0+? i(S i?S 0)/?. The thermoelectric powerS and the electrical resistivity? of thin layers of potassium, evaporated in a vacuum ~5·10?9 Torr on a glass substrate at 90° K temperature, were measured at different thicknesses. The variation ofS as a function of 1/? verifies the above mentioned relation. Thus, the thermoelectric power, characteristic for the scattering by potassium boundary atoms can be determined.  相似文献   

3.
The spin-selective photokinetics of a single matrix-isolated impurity molecule with a triplet-triplet optical transition, T 0T 1, is considered and the manifestations of the photokinetics in the fluorescence excitation spectra and intensity autocorrelation functions g (2)(τ) of the molecule undergoing narrow-band optical excitation is studied to resolve the fine structure of the transition. The rates of intersystem crossings (ISCs) T 1ST 0 to and from a nonradiating singlet state S of the molecule and the rate of population relaxation among the ground (T 0) state sublevels can be obtained from the spectra and g (2)(τ) using the analytical expressions obtained. New experiments on an individual NV defect center in nanocrystals of diamond, where, for the first time, the fine structure of its triplet-triplet 3 A-3 E zero-phonon optical transition (~637 nm) at 1.4 K was resolved, are interpreted. It is concluded that the rate of the ISC transition from the m S =0 sublevel of the excited 3 E state to the singlet 1 A state (~1 kHz) is much slower than the rates from the m S =±1 substates, while the rates of ISC transitions to different m S substates of the ground 3 A state are close to each other (~1 Hz). As a result, only the optical transition between m S =0 sublevels in the 3 A-3 E manifold contributes strongly to the fluorescence. The experimentally observed double-exponential decay of the g (2)(τ) function is explained by the two pathways available to the center for it to leave the S state: (i) the ST 0(m S )=0) transition and (ii) the ST 0(m S =±1) transitions followed by the slow spin-lattice relaxation T 0(m S =±1)→T 0(m S =0) (rate ~0.1 Hz). The work is important for studies where the NV center is used as a single photon source or for quantum information processing.  相似文献   

4.
B Singh  P S Tarsikka  L Singh 《Pramana》2002,59(4):653-661
Studies of dielectric relaxation and ac conductivity have been made on three samples of sodium tungsten phosphate glasses over a temperature range of 77–420 K. Complex relative permitivity data have been analyzed using dielectric modulus approach. Conductivity relaxation frequency increases with the increase of temperature. Activation energy for conductivity relaxation has also been evaluated. Measured ac conductivity (σm(ω)) has been found to be higher than σdc at low temperatures whereas at high temperature σm(ω) becomes equal to σdc at all frequencies. The ac conductivity obeys the relation σac(ω)=Aω S over a considerable range of low temperatures. Values of exponent S are nearly equal to unity at about 78 K and the values decrease non-linearly with the increase of temperature. Values of the number density of states at Fermi level (N(E F)) have been evaluated at 80 K assuming values of electron wave function decay constant α to be 0.5 (Å)?1. Values of N(E F) have the order 1020 which are well within the range suggested for localized states. Present values of N(E F) are smaller than those for tungsten phosphate glasses.  相似文献   

5.
This letter presents an extension of EPL116(2017)62001 to light- and strange-quark nonequilibrium chemical phase-space occupancy factors (γq,s). The resulting damped trigonometric functionalities relating γq,s to the nucleon-nucleon center-of-mass energies (\(\sqrt {{s_{NN}}} \)) looks very similar except different coefficients. The phenomenology of the resulting γq,s(\(\sqrt {{s_{NN}}} \)) describes a rapid decrease at \(\sqrt {{s_{NN}}} \) ? 7GeV followed by a faster increase up to ~20 GeV. Then, both γq,s become nonsensitive to \(\sqrt {{s_{NN}}} \). Although these differ from γ s (\(\sqrt {{s_{NN}}} \))obtained at γ q (\(\sqrt {{s_{NN}}} \))=1, various particle ratios including K++, K??, Λ/π?, Λ?/π?, Ξ++, and Ω/π?, can well be reproduced, as well. We conclude that γq,s(\(\sqrt {{s_{NN}}} \)) should be instead determined from fits of various particle yields and ratios but not merely from fits to the particle ratio K++.  相似文献   

6.
We apply a simple trading strategy for various time series of real and artificial stock prices to understand the origin of fractality observed in the resulting profit landscapes. The strategy contains only two parameters p and q, and the sell (buy) decision is made when the log return is larger (smaller) than p (?q). We discretize the unit square (p,q) ∈ [0,1] × [0,1] into the N × N square grid and the profit Π(p,q) is calculated at the center of each cell. We confirm the previous finding that local maxima in profit landscapes are scattered in a fractal-like fashion: the number M of local maxima follows the power-law form MN a , but the scaling exponent a is found to differ for different time series. From comparisons of real and artificial stock prices, we find that the fat-tailed return distribution is closely related to the exponent a ≈ 1.6 observed for real stock markets. We suggest that the fractality of profit landscape characterized by a ≈ 1.6 can be a useful measure to validate time series model for stock prices.  相似文献   

7.
A quantization procedure without Hamiltonian is reported which starts from a statistical ensemble of particles of mass m and an associated continuity equation. The basic variables of this theory are a probability density ρ, and a scalar field S which defines a probability current j=ρ ? S/m. A first equation for ρ and S is given by the continuity equation. We further assume that this system may be described by a linear differential equation for a complex-valued state variable χ. Using these assumptions and the simplest possible Ansatz χ(ρ,S), for the relation between χ and ρ,S, Schrödinger’s equation for a particle of mass m in a mechanical potential V(q,t) is deduced. For simplicity the calculations are performed for a single spatial dimension (variable q). Using a second Ansatz χ(ρ,S,q,t), which allows for an explicit q,t-dependence of χ, one obtains a generalized Schrödinger equation with an unusual external influence described by a time-dependent Planck constant. All other modifications of Schrödinger’ equation obtained within this Ansatz may be eliminated by means of a gauge transformation. Thus, this second Ansatz may be considered as a generalized gauging procedure. Finally, making a third Ansatz, which allows for a non-unique external q,t-dependence of χ, one obtains Schrödinger’s equation with electrodynamic potentials A,φ in the familiar gauge coupling form. This derivation shows a deep connection between non-uniqueness, quantum mechanics and the form of the gauge coupling. A possible source of the non-uniqueness is pointed out.  相似文献   

8.
In this paper, we investigate the Noether symmetries of F(T) cosmology involving matter and dark energy. In this model, the dark energy is represented by a canonical scalar field with a potential. Two special cases for dark energy are considered, including phantom energy and quintessence. We obtain F(T)~T 3/4, and the scalar potential V(?)~? 2 for both models of dark energy and discuss quantum picture of this model. Some astrophysical implications are also discussed.  相似文献   

9.
The following parameters have been obtained for a thick (thickness t ~50 μm) film of high-temperature superconducting ceramics of the Bi-2223 system have been implemented: magnetosensitivity S u ~ 29 V T?1 and resolutions δB ~ 3 nT and δ? ~ 4?0 in magnetic field and magnetic flux, respectively. It is shown that the film magnetosensitivity can be significantly increased due to the size effect. The expected characteristics, estimated with allowance for the size effect, are S u ≥ 1000 V T?1, δB ~ 0.01 nT, δ? ~ 0.01 ?0, and the range of dynamic measurement ≥150 dB.  相似文献   

10.
The evolution of the surface morphology of LPCVD poly-Si films (deposition temperature 620°C), a-Si films (deposition temperature 550°C) and poly-Si films, obtained by the crystallization of a-Si is investigated in the thickness range 40–500 nm. It is found that upon an increase in the thickness from 40 to 500 nm, the surface roughness (parameters S q , S z , S v ) is increased for poly-Si, while in the case of a-Si and poly-Si obtained by crystallization a-Si, on the contrary, decreases. The correlation length (S al ) increases for all three types of silicon films. Poly-Si films, obtained by the crystallization of a-Si, as compared to LPCVD poly-Si films have a significantly lower surface roughness, respectively, S q two times less at a thickness of 40 nm and sixteen times less at 500 nm. In contrast to thick films, thin a-Si films (at thicknesses of less than 40 nm) have a granular structure, which is especially pronounced at an average thickness of about 20 nm and there is a maximum on the dependence of the roughness S q on the thickness.  相似文献   

11.
We deposited amorphous Bi films with a thickness between 3 and 6.5 nm at 4.2 K on top of previously deposited Co clusters having a mean size of ~4.5 nm. The Co cluster layers thickness was between 2.3 and 5 nm. In-situ electrical transport measurements were performed between 2 and 100 K. Measurements on as-prepared samples having a Bi layer thickness of 3.0 nm show hopping (tunneling) conductivity as σ(T) = σ 0 exp[?(T 0/T)1/2] above the superconducting transition temperature T C and re-entrance behavior again with hopping (tunneling) conductivity below T C . Annealing of films having a Bi layer thickness of 5.5 nm results in a decrease of resistivity, with variable-range hopping conduction behavior as σ(T) = σ 0 exp[?(T 0/T)1/3 ]. Quite different are the findings for films having a Bi layer thickness of 6.5 nm: annealing of these films results in a power-law behavior as σ(T) = σ 0 T α with α = 2/3, indicating that these films are close to a quantum critical point separating superconducting and insulating phases. A phase diagram including all experimental observations is proposed.  相似文献   

12.
Considering the magneto-diluted gadolinium-containing Adamian alloys, it is shown that the dependence of the Curie temperature on the de Gennes factor ξ = c(g ? 1)2J(J + 1) can be expanded for ferromagnets with the exchange frustration. It is shown that in this case it is necessary to replace J by S eff and that the linear dependence of T C on ξeff remains up to the pure spin-glass state with S eff = 0.  相似文献   

13.
Corrections of the α3, α4, and α5 orders are calculated for the Lamb shift of the 1S and 2S energy levels of muonic hydrogen μp and muonic deuterium μd. The nuclear structure effects are taken into account in terms of the charge radii of the proton r p and deuteron r d for one-photon interaction, as well as in terms of the electromagnetic form factors of the proton and deuteron for the case of one-loop amplitudes. The μdp isotope shift for the 1S-2S splitting is found to be equal to 101003.3495 meV, which can be treated as a reliable estimate when conducting the corresponding experiment with an accuracy of 10?6. The fine-structure intervals E(1S)-8E(2S) in muonic hydrogen and muonic deuteron are calculated.  相似文献   

14.
The paramagnetic relaxation in CeCl3 was investigated in the temperature interval between 1.07°K and 4.21°K using a mutual inductance bridge at frequencies between 3 Hz and 3200 Hz. The dependence of the complex susceptibility on temperature below theλ point is given by a Debye function. Above this temperature, however, deviations occur. The temperature dependence of the relaxation time forT<T λ can be described byτT ?n where 1.82≦n≦2.35 for 470 Oe≦H≦3360 Oe. At the highest temperatures Orbach Processes occur over the first excited crystal field component which according to these measurements lies atE II=k(56±10)°K. In the entire temperature range the relaxation processes are determined by further relaxation mechanisms in addition to the spin lattice relaxation. The nature of these could not, however, be determined.  相似文献   

15.
For some purposes in statistical physics, such as, for example, the calculation of various transport coefficients, it is necessary to have expressions for the energy current operatorS and stress tensor operatorT lm . In this work it is shown that by using a simple identity, exact expressions forS andT lm which satisfy the conservation laws for the energy density? and momentum densityP, respectively, exist.S andT lm can each be written as a sum of two parts,S=S (A) +S (B) T lm =T lm (A) +T lm (B) . The “A” part is the ordinary convective or kinetic part while the “B” part is shown to be expressible as a gradient and hence its homogeneous component vanishes identically. The expressions are compared with approximate forms found in the literature. The operators are Fourier analyzed and written in terms of the field operators in the second quantization formalism.  相似文献   

16.
The main purpose of this work is to distinguish various holographic type dark energy (DE) models, including the ΛHDE, HDE, NADE, and RDE model, by using various diagnostic tools. The first diagnostic tool is the Statefinder hierarchy, in which the evolution of Statefinder hierarchy parmeter S (1) 3(z) and S (1) 4(z) are studied. The second is composite null diagnostic (CND), in which the trajectories of {S (1) 3, ?} and {S (1) 4, ?} are investigated, where ? is the fractional growth parameter. The last is w-w′ analysis, where w is the equation of state for DE and the prime denotes derivative with respect to lna. In the analysis we consider two cases: varying current fractional DE density Ω de0 and varying DE model parameter C. We find that: (1) both the Statefinder hierarchy and the CND have qualitative impact on ΛHDE, but only have quantitative impact on HDE. (2) S (1) 4 can lead to larger differences than S (1) 3, while the CND pair has a stronger ability to distinguish different models than the Statefinder hierarchy. (3) For the case of varying C, the {w,w′} pair has qualitative impact on ΛHDE; for the case of varying Ω de0, the {w, w′} pair only has quantitative impact; these results are different from the cases of HDE, RDE, and NADE, in which the {w,w′} pair only has quantitative impact on these models. In conclusion, compared with HDE, RDE, and NADE, the ΛHDE model can be easily distinguished by using these diagnostic tools.  相似文献   

17.
The formation of an energy cascade in a system of vortices generated by perpendicular standing waves with a frequency of 6 Hz on the water surface has been experimentally studied. It has been found that peaks appear on the energy distribution over wave vectors E(k) after switching on pumping. These peaks are transformed with time because of the energy redistribution over scales. The stationary distribution E(k) established 300 s after switching on pumping can be described by a power-law function of the wave vector E(k) ~ k1.75. It has been shown that waves with frequencies of about 18, 15, 12, 9, and 3 Hz appear on the surface of water owing to the nonlinear interaction at the excitation of a 6-Hz wave. It is assumed that the energy cascade of the turbulent motion in the wave vector range of 0.3–5 cm?1 is formed by the nonlinear interaction between vortices generated by all waves propagating on the surface and direct energy fluxes toward high wave vectors dominate.  相似文献   

18.
We link the Boundary Control Theory and the Titchmarsh-Weyl Theory. This provides a natural interpretation of the A?amplitude due to Simon and yields a new efficient method to evaluate the Titchmarsh-Weyl m?function associated with the Schrödinger operator H = ?? x 2  + q(x) on L 2(0, ∞) with Dirichlet boundary condition at x = 0.  相似文献   

19.
The paramagnetic relaxation of Tb0,01 Y0,99(C2H5SO4)3·9H2O at temperatures between 1,14°K and 4,21°K has been investigated with the absorption-dispersion method at frequencies between 5 sec?1 and 10240 sec?1 and different magnetic fields. AtH=700 Oe. The relaxation time follows the equationτ ?1=[A H 3 coth (g z μ B H/2k T)+B T 7] sec?1 as a function of temperature. ForH<800 Oe the paramagnetic relaxation is influenced by cross relaxation processes between the hyperfine structure levels.  相似文献   

20.
The electrical resistivity ρ and the thermopower S of ceramic materials LnBaCuFeO5 + δ (Ln= La, Pr, Nd, Sm, Gd-Lu) are measured in air at temperatures in the range from 300 to 1100 K. All the studied ferrocuprates are p-type semiconductors. The electrical resistivity ρ and the thermopower S of these compounds increase with a decrease in the radius of the Ln 3+ cation (with an increase in the number of 4f electrons n in Ln 3+). The nonmonotonic behavior of the dependences ρ=f(n) and S=f(n) indicates that the electrical properties of the layered ferrocuprates LnBaCuFeO5 + δ depend on the electronic configuration of the Ln 3+ cation. The power factors P calculated for the LnBaCuFeO5 + δ ceramic materials from the experimental values of ρ and S increase with increasing temperature and, at T = 1000 K, reach the maximum values P = 102.0 and 54.1 µW m?1 K?2 for Ln = Pr(4f 2) and Sm(4f 5), respectively, and become close to each other and equal to 30–35 µW m?1 K?2 for Ln = Gd(4f 7), Dy(4f 9), and Ho(4f 10).  相似文献   

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