Transverse conductivity behavior at threshold electric field for CDW sliding in NbSe3

We have measured the dynamical properties which occur in the transverse direction to the conducting chains in NbSe₃ single-crystals, when the CDW slides along the chains. A sharp decrease in transverse conductivity takes place above an electric field less than the longitudinal threshold one for CDW sliding; that may result from induced phase shifts between CDW chains. Under the joint application of dc and rf driving fields voltage Shapiro steps for longitudinal transport are observed as usual but also pronounced current Shapiro steps in transverse direction. The possible mechanisms of this effect as well as a tentative new view on the origin of the narrow band noise in CDW compounds are discussed.     

“Quantization” of the q-vector in microcrystals of K0.3MoO3 and NbSe3

We report steps of conductivity between discrete conducting states in microsamples of quasi-one-dimensional conductors K_0.3MoO₃ and NbSe₃. The steps reveal single phase-slip events, and the discrete states reveal “quantization” of the wave vector q of the charge-density wave. The “quantization” is observed due to the coherence of the CDW within the sample volume and tight boundary conditions at the contacts. The distribution of steps in temperature gives the temperature dependences of the q-vectors, while the steps' height provides the carriers' mobilities. For the case of NbSe₃ we give the 1st direct confirmation of the extremely high mobility of the “pocket” holes at low temperatures.     

准二维电荷密度波导体钾紫青铜KxMo6O17单晶样品的制备

采用碳酸盐替代高钼酸盐电解还原的方法成功制备出了准二维电荷密度波导体钾紫青铜单晶.通过x射线衍射、透射电子显微术等方法对单晶进行结构分析表明：晶胞参数a=b=0.5540nm，c=1.3508nm，单晶为三角晶系，对称群为P3.电阻温度关系曲线的测量显示：钾紫青铜K_xMo₆O₁₇单晶在112K附近发生金属到金属的Peierls相变. 关键词： 钾紫青铜 电荷密度波 Peierls相变     

Electronic structure and properties of NbS2 and TiS2 low dimensional structures

Transition metal dichalcogenides have a laminar structure, weakly bound through van der Waals interactions. Due to their technological applications in catalytic processes the bulk structure of many of them has been widely studied in the last 30 years. Some of them, such as NbTe₂ and TiSe₂, show superconductivity and have been, therefore, the subject of intense study. Novoselov et al. (2005 [1]) achieved to isolate not only graphene but also other bidimensional crystals, among them layers of some dichalcogenides. These bidimensional crystals preserve their monocrystallinity under normal ambient conditions, keeping the crystal structure of the bulk. In this contribution we calculate the magnetic and electronic properties of 2D layers of NbS₂ (non-magnetic metal in 3D) and TiS₂ (non-magnetic semimetal in 3D) as well as quasi 1D chains cut out from these layers.     

三氧化钨晶体拓扑结构生长行为及其电致变色性能

本研究利用种子层辅助的水热反应法,在导电玻璃上沉积生长三氧化钨(WO3)晶体结构薄膜.通过调控水热反应溶液中盐酸、草酸的浓度以及后处理温度,分别得到花朵状、海胆状和多孔花瓣状的WO3晶体结构薄膜.采用扫描电子显微镜、X射线衍射、透射电子显微镜和电化学表征等手段研究了不同拓扑结构形成的机理及其对WO3电致变色性能的影响....     

High-pressure X-ray diffraction study of 1T-TaS2

We present a room temperature high-pressure X-ray diffraction study of the layered compound 1T-TaS₂ up to 20 GPa. This material is known to exhibit a variety of structural phase transitions that are ascribed to the stabilization of charge density wave states. It has been recently shown that at pressures larger than 3 GPa and up to 25 GPa, 1T-TaS₂ becomes superconductor below about 5 K. It was suggested that this superconductivity coexists with different CDW states, an hypothesis that can be tested by X-ray diffraction. Our first results at room temperature show that at around 1.9 GPa, the nearly-commensurate (NCCDW) phase transforms into a phase similar to the high temperature incommensurate phase (ICCDW). Above 9 GPa, we show the existence of another IC phase, still discernable up to 20 GPa despite the pressure-induced crystal damage above 13 GPa. These results are consistent with resistivity measurements, but call for a complete exploration of the P–T phase diagram of 1T-TaS₂.     

Lateral-field-excitation properties of LiNbO3 single crystal

LiNbO 3 has been found attractive for lateral field excitation (LFE) applications due to its high piezoelectric coupling. In this paper, bulk acoustic wave propagation properties for LiNbO 3 single crystal excited by a lateral electric field have been investigated using the extended Christoffel-Bechmann method. It is found that the LFE piezoelectric coupling factor for c mode reaches its maximum value of 95.46% when ψ = 0 for both (yxl)-58 and (yxwl)±60 /58 LiNbO 3 . The acoustic wave phase velocity of c mode TSM (thickness shear mode) changes from 3456 m/s to 3983 m/s as a function of ψ. Here ψ represents the angle between the lateral electric field and the crystallographic X-axis in the substrate major surface. A 5 MHz LFE device of (yxl)-58 LiNbO 3 with ψ = 0 was designed and tested in air. A major resonance peak was observed with the motional resistance as low as 17 and the Q-factor value up to 10353. The test result is well in agreement with the theoretical analysis, and suggests that the LFE LiNbO 3 device can be a good platform for high performance resonator or sensor applications.     

Optical properties of CH3NH3PbI3 crystal grown using inverse temperature crystallization

Perovskite CH₃NH₃PbI₃ (MAPbI₃) single crystal was grown using inverse temperature crystallization method. Crystallinity of the perovskite was confirmed by X-ray diffraction. Photoluminescence (PL) spectra revealed abnormal behavior due to a temperature-induced orthorhombic to the tetragonal phase transition. Four PL emission peaks, A, B, C, and D, were observed in the low temperature regime. Peaks A and B were observed at 756 and 776?nm?at 12?K, and were blue-shifted and disappeared at 130 and 70?K, respectively. Peaks C and D were observed at 789 and 807?nm?at 40?K and were also blue-shifted to 780 and 794?nm?at 100?K. On the other hand, the peak C red-shifted to 799?nm from 100 to 140?K because of an orthorhombic to the tetragonal phase change and was also blue-shifted above 140?K. From the excitation intensity- and temperature-dependent PL results, peaks A and B were assigned to the free-exciton and bound-exciton of the orthorhombic phase crystal, respectively. In addition, peaks C and D were associated with the free-exciton and bound-exciton of the tetragonal phase crystal, respectively. The activation energy of peak C was calculated to be 98?meV from temperature dependence of the PL intensity.     

Ground state of the quasi-1D correlated electronic system BaVS3

In this paper we review the salient features of the different instabilities exhibited by the quasi-1D system BaVS₃ and show that there is a subtle interplay between the different phases stabilized. The analysis of the Peierls instability shows that the mobile dz² electrons are more localized than calculated because of their strong correlation with the localized e(t_2g) electrons. The complex AF magnetic structure of BaVS₃ incorporates the magnetization of the e(t_2g) electrons with the Peierls pairing of the dz² electrons into magnetic singlets. Finally, we propose that the zig-zag disorder remaining after an incomplete orthorhombic phase transition could change the sign of the magnetic coupling and thus help to stabilize the canted ferromagnetism observed in non stoichiometric BaVS_3−δ and Sr and Ba substituted compounds.     

Temperature and field dependent electronic structure and magnetic properties of LaCoO3 and GdCoO3

The transformation of the band structure of LaCoO₃ in the applied magnetic field has been theoretically studied. If the field is below its critical value B_C≈65 T, the dielectric band gap decreases with the field, thus giving rise to negative magnetoresistance that is highest at T≈300÷500 K. The critical field is related to the crossover between the low- and high-spin terms of Co³⁺ ions. The spin crossover results in an insulator–metal transition induced by an increase in the magnetic field. Similar calculations have been done for GdCoO₃ which is characterized by large spin gap∼2000 K.     

VO2金属-绝缘体相变机理的研究进展

VO₂是一种热致相变金属氧化物. 在341 K附近, VO₂发生由低温绝缘体相到高温金属相的可逆转变, 同时伴随着光学、电学和磁学等性质的可逆突变, 这种独特的性质使得VO₂在光电开关材料、智能玻璃、存储介质材料等领域有着广阔的应用前景. 因此, VO₂金属-绝缘体可逆相变一直是人们的研究热点, 但其相变机理至今未有定论. 首先, 简要概述了VO₂相变时晶体结构和能带结构的变化情况: 从晶体结构来讲, 相变前后VO₂从低温时的单斜相VO₂(M)转变为高温稳定的金红石相VO₂(R), 在一定条件下此过程也可能伴随着亚稳态单斜相VO₂(B)与四方相VO₂(A)的产生; 从能带结构来看, VO₂处于低温单斜相时, 其d_//能带和π^*能带之间存在一个禁带, 带宽约为0.7 eV, 费米能级恰好落在禁带之间, 表现出绝缘性, 而在高温金红石相时, 其费米能级落在π^*能带与d_//能带之间的重叠部分, 因此表现出金属导电性. 其次, 着重总结了VO₂相变物理机理的研究现状. 主要包括: 电子关联驱动相变、结构驱动相变以及电子关联和结构共同驱动相变的3种理论体系以及支撑这些理论体系的实验结果. 文献报道争论的焦点在于, VO₂是否是Mott绝缘体以及结构相变与MIT相变是否精确同时发生. 最后, 展望了VO₂材料研究的发展方向.     

Growth and optical properties of Mg, Fe Co-doped LiTaO3 crystal

Mg, Fe double-doped LiTaO₃ and LiNbO₃ crystals have been grown by Czochralski method. The optical properties were measured by two-beam coupling experiments and transmitted facula distortion method. The results showed that the photorefractive response speed of Mg:Fe:LiTaO₃ was about three times faster than that of Fe:LiTaO₃, whereas the photo-damage resistance was two orders of magnitude higher than that of Fe:LiTaO₃. In this paper, site occupation mechanism of impurities was also discussed to explain the high photo-damage resistance and fast response speed in Mg:Fe:LiTaO₃ crystal.     

Yb3+掺杂KY(WO4)2激光晶体生长、结构与光谱分析

采用顶部籽晶提拉法(TSSG)生长出Yb:KY(WO₄)₂(Yb:KYW)激光晶体.对预烧后的原料及晶体进行了XRD分析，结果表明，分别在920℃和600℃预烧8h后的熔质和助熔剂基本上形成一相，抑止了实验中的挥发问题；所生长的晶体为β-Yb:KYW，计算其晶格常数为a=1.063nm，b=1.034nm，c=0.755nm，β=130.75°.测得不同厚度样品的吸收光谱，结果表明样品在933nm和981nm有较强的吸收峰，计算出主峰981nm的吸收截面σ关键词： Yb:KYW TSSG法 晶体结构 光谱参数     

Electronic structure and optical properties of Sb2S3 crystal

The electronic and optical properties of Sb₂S₃ are studied using the full potential linearized augmented plane wave (FP-LAPW) method as implemented in Wien2k. In this approach, the alternative form of the generalized gradient approximation (GGA) proposed by Engel and Vosko (EV-GGA) was used for the exchange correlation potential. The calculated band structure shows a direct band gap. The contribution of different bands was analyzed from total and partial density of states curves. Moreover, the optical properties, including the dielectric function, absorption spectrum, refractive index, extinction coefficient, reflectivity and energy-loss spectrum are all obtained and analyzed in detail.     

Magnetic and transport properties of Pr2Pt3Si5

We have investigated the magnetic and transport properties of a polycrystalline Pr₂Pt₃Si₅ sample through the dc and ac magnetic susceptibilities, electrical resistivity, and specific heat measurements. The Rietveld refinement of the powder X-ray diffraction data reveals that Pr₂Pt₃Si₅ crystallizes in the U₂Co₃Si₅-type orthorhombic structure (space group Ibam). Both the dc and ac magnetic susceptibility data measured at low fields exhibit sharp anomaly near 15 K. In contrast, the specific heat data exhibit only a broad anomaly implying no long range magnetic order down to 2 K. The broad Schottky-type anomaly in low temperature specific heat data is interpreted in terms of crystal electric field (CEF) effect, and a CEF-split singlet ground state is inferred. The absence of the long range order is attributed to the presence of nonmagnetic singlet ground state of the Pr³⁺ ion. The electrical resistivity data exhibit metallic behavior and are well described by the Bloch–Grüniesen–Mott relation.     

Growth,structure and physical properties of gadolinium doped Sr2IrO4 single crystal

A series of Gd-doped Sr₂IrO₄ single crystals were grown using a flux method. Analysis of the temperature-dependent resistance of these crystals reveals that these samples show two-dimensional weak localization at 150 to 300 K, while three-dimensional variable range hopping (VRH) behavior is observed at temperatures lower than 150 K. Two localization lengths are observed in the VRH behavior, with a transition temperature of around 88 K. Correspondingly, temperature-dependent magnetization observations along the ab-plane reveal magnetic anomalies at both 150 and 85 K. This work demonstrates the correlation between the electrical and magnetic properties of 5d transition-metal compounds.     

The microscopic features of (Li0.5La0.5)TiO3

In ionic conducting materials, the crystal structure is closely related to the ionic conductivity. In this research we studied the microscopic features of Li_0.5La_0.5TiO₃ which exhibited a lithium ionic conductivity as high as 1×10⁻³ Scm⁻¹ at room temperature by XRD, TEM and SIMS. It was found that the superstructure was caused by the ordering of La⁺³ and vacancy, producing the 2a_p×2a_p×2a_p unit cell. This ordering was found to be regular in microscopic region, but became irregular in macroscopic region. Li⁺ showed a random distribution which meet the needs for the fast ionic conduction. The second phase was found to be Li₂TiO₃ which existed in the grain boundary junctions.     

Electrical transport properties of a quasi-one-dimensional Nb3Te4 single crystal

The electrical resistance of a linear chain metal Nb₃Te₄ were measured from 1.3 to 320 K. The residual resistance ratio $\text{R(300}\text{K}\text{)}\text{R(4.2}\text{K}\text{)}$ is about 3. Nb₃Te₄ shows an anomaly in the resistivity vs temperature at about 80 K, suggesting an occurrence of a charge-density-wave transition. The transverse and longitudinal magnetoresistance at 4.2 K are proportional to the magnetic field in the range of 2–58 kOe. In the superconducting region close to the transition temperature T_c, the critical magnetic field H_c2 is proportional to δT=T_c?T. The angular dependence of H_c2 fits well with the fluxoid model of the Ginzburg-Landau theory. The ratio of the critical fields parallel and perpendicular to the chain direction is 4.8.     

La0.67Sr0.08Na0.25MnO3的奇特输运性质及CMR效应

用固相反应法制备了La_0.67Sr_0.08Na_0.25MnO₃样品.通过磁化强度-温度(M-T)曲线、电阻率-温度(ρ-T)曲线以及ρ-T拟合曲线研究了样品的输运性质及庞磁电阻(colossal magnetoresistance，CMR)效应.结果表明，ρ-T曲线和磁电阻-温度(MR-T)曲线均出现双峰现象；高温峰是伴随顺磁-铁磁(PM-FM)相变出现绝缘体-金属(I-M)相变，低温峰是颗粒界面效应；两个绝缘相输运机理不同：较低温度下(248K<T<274K)，ρ(T)符合极化子的可变程跃迁模型，而在更高温区(330K<T<374K)，ρ(T)符合极化子近邻跃迁模型；两个类金属相输运机理也不同：在低温区(67K<T<186K)，满足ρ-T^2.5关系，输运机理是自旋波散射和电-磁子散射作用，而在高温区(292K<T<304K)，满足ρ-T²关系，输运机理是单磁子散射作用. 关键词： 庞磁电阻 金属-绝缘体转变 晶界效应 输运行为