Scanning tunneling spectroscopy and break junction spectroscopy on iron-oxypnictide superconductor NdFeAs(O0.9F0.1)

Iron-oxypnictide superconductor NdFeAs(O_0.9F_0.1) was studied using both low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) and tunnel break junction (BJ) methods. STM topography showed granular and spot structures with a typical size of several nanometers, most probably governed by fluorine atom distribution. The majority of STS conductance, G, versus voltage, V, curves revealed V-shaped structures, whereas some of G(V) dependences possessed coherent gap peaks or kinks at gap energies. At the same time, G(V) dependences obtained by the BJ technique showed clear-cut coherence peaks with peak-to-peak distances V_pp = 4Δ/e ∼ 25 mV at 4.2 K, where Δ is the superconducting energy gap, e > 0 is the elementary charge. This yields Δ(0) = 6–7 meV, so that the ratio 2Δ(0)/k_BT_c is about 3–4, k_B being the Boltzmann constant. This value is consistent with the conventional weak-coupling s-wave Bardeen–Cooper–Schrieffer theory.     

Scanning tunneling microscopy study on a BC3 covered NbB2(0 0 0 1) surface

We have investigated a BC₃ covered NbB₂(0 0 0 1) surface using scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and low energy electron diffraction (LEED). The STM images reveal characteristic features of a Moiré pattern reflecting an incommensurate relation of the BC₃ sheet with the substrate: bright protrusions with the periodicity of the substrate lattice are modulated in intensity with the periodicity of the BC₃ lattice. As a result, the surface exhibits nm-scale patchy regions with either the √3 × √3 or the 1 × 1 structure of the substrate. The two-dimensional Fourier transformation pattern of the STM image is consistent with the LEED pattern proving the epitaxial and incommensurate relationship between BC₃ surface sheet and substrate. No feature of a predicted superconducting gap was found in STS spectra measured at 5 K.     

Charge transfer in the atomic structure of Ge (1 0 5)

The atomic structure and charge transfer on the Ge (1 0 5) surface formed on Si substrates are studied using scanning tunneling microscopy and spectroscopy (STM and STS). The bias-dependent STM images of the whole Ge (1 0 5) facets formed on a Ge “hut” structure on Si (0 0 1) are observed, which are well explained by the recently confirmed structure model. The local surface density of states on the Ge (1 0 5) surface is measured by STS. The localization of the electronic states expected from charge transfer mechanism is observed in the dI/dV spectra. The surface band gap is estimated as 0.8-0.9 eV, which is even wider than the bulk bandgap of Ge, indicating the strong charge transfer effect to make the dangling bonds stable. The shape of normalized tunnel conductance agrees with the theoretical band structure published recently by Hashimoto et al.     

Low-temperature STM/STS studies on boron-doped (1 1 1) diamond films

We have performed scanning tunneling microscopy/spectroscopy (STM/STS) experiments on (1 1 1)-oriented epitaxial films of heavily boron-doped diamond (T_c∼5.4 K). We present that tunneling conductance spectra show temperature-dependent spatial variations. In the low-temperature region (T=0.47 K), the tunneling spectra do not show strong spatial dependence and a superconducting energy gap is observed independent of the surface morphology. In the high-temperature region (T=4.2 K), on the other hand, the tunneling conductance spectra show significant spatial dependence, indicating the inhomogeneous distribution of the superconducting property due to the distribution of boron atoms.     

One-dimensional structural and electronic properties of magnetite Fe3O4(1 1 0)

We study the structure and the electronic properties of the (1 1 0) surfaces of magnetite Fe₃O₄ thin films by scanning tunneling microscopy (STM) and spectroscopy (STS). The STM images show a surface reconstruction consisting of ridges along the direction. Based on atomically resolved STM images we present a model for the observed ridge reconstruction of the surface, in agreement with a bulk-truncated layer containing both octahedral and tetrahedral iron ions. The metallic and semiconductor-like shapes of the measured current-voltage (I-V) curves indicate a non-uniform segregation of magnesium through the film. The weak contrast between the tops and valleys of ridges measured in the STS current maps is attributed to tetrahedral and octahedral coordination at the tops and the valleys, respectively. This attribution is in agreement with the proposed structure model. We observe a contrast enhancement at a tip change accompanied by a corrugation enhancement. This tip change is induced by picking up material from the sample, resulting in a magnetic tip. Thus, the contrast enhancement is attributed to detection of spin polarized current.     

Scanning tunneling microscopy on iron-chalcogenide superconductor Fe(Se, Te) single crystal

We have investigated the iron-chalcogenide superconductor Fe(Se, Te) using a low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) technique. STM topography at 4.9 K shows clear regular square arrangements of spots with the lattice spacing ～0.37 nm, from which what we observe are attributed to Se or Te atomic plane. In the topography, brighter and darker atomic spots are randomly distributed, which are most probably due to Te and Se atoms, respectively. For the FeTe compound, the topography exhibits clusters of the bright spots probably arising from separated iron atoms distributing over several Te lattice sites. The STS measurements clarify the existence of the large-size gap with 2Δ = 0.4–0.6 eV.     

Scanning tunneling microscopy and spectroscopy investigations of copper phthalocyanine adsorbed on Al2O3/Ni3Al(1 1 1)

Low temperature scanning tunneling microscopy (LT-STM) and scanning tunneling spectroscopy (STS) have been used to investigate adsorbed copper phthalocyanine (C₃₂H₁₆N₈Cu) molecules on an ordered ultrathin Al₂O₃ film on the Ni₃Al(1 1 1) surface as a function of coverage and annealing temperature. For sub-monolayer coverage and a deposition temperature of 140 K two different planar molecular adsorption configurations rotated by 30° with respect to each other were observed with submolecular resolution in the STM images. The template effect of the underlying oxide film on the CuPc orientation, however, is only weak and negligible at higher coverages. For θ_CuPc ≈ 1 ML, before completion of the first layer, the growth of a second layer was already observed. The measured spacing of 3.5 Å between first and second layer corresponds to the distance between the layers in the α-modification of crystalline CuPc. The molecules deposited at 140 K are thermally stable upon prolonged annealing to temperatures up to 250 K. By the use of STS the lowest unoccupied molecular orbital (LUMO) of the adsorbed copper phthalocyanine molecules has been identified at an energy of 1.2 eV above E_F. The lateral distribution of the electronic states of the CuPc has been analyzed and mapped by STS.     

Room and high-temperature scanning tunnelling microscopy and spectroscopy (HT-STM/STS) investigations of surface nanomodifications created on the TiO2(1 1 0) surface

High-temperature scanning tunnelling microscopy, scanning tunnelling spectroscopy and current imaging tunnelling spectroscopy (HT-STM/STS/CITS) were used to study the topographic and electronic structures changes due to surface modifications of the TiO₂(1 1 0) surface caused by the STM tip. In situ high-temperature STM results showed that the created modifications were stable even at elevated temperatures. The STS/CITS results showed the presence of energy gap below the Fermi level on the untreated regions. The disappearance of energy gap below the Fermi level on the modifications created by the tip was observed. It is assumed that the presence of the tip can change the chemical stoichiometry of the surface from TiO_2−x towards Ti₂O₃.     

Effects of simultaneous carrier doping in the charge reservoir and conducting layers of superconducting CeO0.9F0.1Fe1−xCoxAs

Electron-doping of the semimetal (CeOFeAs) by either fluorine (max T_c ∼ 43 K) or cobalt (max T_c ∼ 11 K) leads to superconductivity. Here we show the effect of transition metal (Co) substitution at the iron site on the superconducting properties of CeO_0.9F_0.1FeAs (T_c ∼ 38 K) to understand the interplay of charge carriers in both the rare earth-oxygen and Fe–As layers. Simultaneous doping of equivalent number of charge carriers in both layers leads to a T_c of 9.8 K which is lower than the T_c obtained when either the conducting layer (FeAs) or charge reservoir layer (CeO) is individually doped. This suggests a clear interplay between the two layers to control the superconductivity. Resistivity upturn and negative magnetoresistance are observed with Co doping that is interpreted in the gamut of Kondo effect. Hall coefficient and thermoelectric power indicate increased carrier concentration with cobalt doping in CeO_0.9F_0.1FeAs. The rf penetration depth both for CeO_0.9F_0.1Fe_0.95Co_0.05As and CeO_0.9F_0.1FeAs show an exponential temperature dependence with gap values of ∼1.6 and 1.9 meV respectively.     

Morphology and electronic structure of bcc Co(1 1 0) and fcc/hcp Co(1 1 1) on Fe(1 1 0) investigated by STM and STS

We report on the growth of ultrathin epitaxial Co films on Fe(1 1 0) examined by scanning tunneling microscopy and spectroscopy (STM and STS). At room temperature Co forms pseudomorphic, ideally ordered body-centered cubic (bcc) layers for the first two monolayers as confirmed by atomically resolved STM images. This is in contrast to the related case of Co/Cr(1 1 0) where a superstructure occurs in the second layer. The third monolayer forms a close-packed structure and causes a transformation of the buried second monolayer into a close-packed structure. The Fe(1 1 0) substrate strongly influences the electronic structure of the first Co monolayer as concluded from the dI/dU spectra. This influence is less important for the second monolayer. The measured local density-of-states function for the bcc Co double layer is in agreement with theoretical predictions for bcc Co.     

The influence of light intensity on surface recombination in GaS single crystals

Gallium sulphide (GaS) is a layer structure semiconductor with relatively wide energy gap (E_g (295 K) = 2.5 eV and E_g (80 K) = 2.62 eV). It has potential applications in some areas of optoelectronics. This paper presents the investigations of the influence of light intensity on surface recombination velocity of charge carriers in GaS single crystals. To attain this purpose spectral dependences (between 420 and 550 nm) of absorption coefficients, reflectivity coefficients and photoconductivity were measured in vacuum. The investigations were performed for various light intensities in several temperatures from 80 to 333 K. The least square method was applied to fit the theoretical dependences of photoconductivity on wavelength and intensity of illumination at these temperatures. From the fittings the temperature and light intensity dependences of surface recombination velocity and bulk lifetime of charge carriers were obtained.     

Oxygen-induced p(3 × 1) reconstruction of the W(1 0 0) surface

The oxidation of the W(1 0 0) surface at elevated temperatures has been studied using room temperature STM and LEED. High exposure of the clean surface to O₂ at 1500 K followed by flash-annealing to 2300 K in UHV results in the formation of a novel p(3 × 1) reconstruction, which is imaged by STM as a missing-row structure on the surface. Upon further annealing in UHV, this surface develops a floreted LEED pattern characteristic of twinned microdomains of monoclinic WO_x, while maintaining the p(3 × 1) missing-row structure. Atomically resolved STM images of this surface show a complex domain structure with single and double W〈0 1 0〉 rows coexisting on the surface in different domains.     

Surface characterization of self-assembled N-Cu nanostructures

We report on the process of low energy N₂⁺ implantation and annealing of a Cu(0 0 1) surface. Through AES we study the N diffusion process as a function of the substrate temperature. With STM and LEIS we characterize the surface morphology and the electronic structure is analyzed with ARUPS. Under annealing (500 < T < 700 K) N migrates to the surface and reacts forming a Cu_xN compound that decomposes at temperatures above 700 K. LEIS measurements show that N locates on the four-fold hollow sites of the Cu(0 0 1) surface in a c(2 × 2) arrangement. Finally, a gap along the [0 0 1] azimuthal direction is determined by ARUPS. DFT calculations provide support to our conclusions.     

Nucleation of ordered Fe islands on Al2O3/Ni3Al(1 1 1)

Scanning tunneling microscopy (STM) has been used to investigate the nucleation and stability of iron clusters on the Al₂O₃/Ni₃Al(1 1 1) surface as a function of coverage and annealing temperature. We show that atomic beam deposition of iron leads to hexagonally ordered cluster arrangements with a distance of 24 Å between the clusters evidencing the template effect of the alumina film. The shape of the iron clusters is two-dimensional (2D) at deposition temperatures from 130 K to 160 K and three-dimensional (3D) at 300 K. However, the 2D iron clusters grown between 130 K and 160 K are stable up to 350 K.     

Hydroxylation-induced modifications of the Al2O3/NiAl(0 0 1) surface at low water vapour pressure

STM, STS, LEED and XPS data for crystalline θ-Al₂O₃ and non-crystalline Al₂O₃ ultra-thin films grown on NiAl(0 0 1) at 1025 K and exposed to water vapour at low pressure (1 × 10⁻⁷-1 × 10⁻⁵ mbar) and room temperature are reported. Water dissociation is observed at low pressure. This reactivity is assigned to the presence of a high density of coordinatively unsaturated cationic sites at the surface of the oxide film. The hydroxyl/hydroxide groups cannot be directly identify by their XPS binding energy, which is interpreted as resulting from the high BE positions of the oxide anions (O_1s signal at 532.5-532.8 eV). However the XPS intensities give evidence of an uptake of oxygen accompanied by an increase of the surface coverage by Al³⁺ cations, and a decrease of the concentration in metallic Al at the alloy interface. A value of ∼2 for the oxygen to aluminium ions surface concentration ratio indicates the formation of an oxy-hydroxide (AlO_xOH_y with x + y ∼ 2) hydroxylation product. STM and LEED show the amorphisation and roughening of the oxide film. At P(H₂O) = 1 × 10⁻⁷ mbar, only the surface of the oxide film is modified, with formation of nodules of ∼2 nm lateral size covering homogeneously the surface. STS shows that essentially the valence band is modified with an increase of the density of states at the band edge. With increasing pressure, hydroxylation is amplified, leading to an increased coverage of the alloy by oxy-hydroxide products and to the formation of larger nodules (∼7 nm) of amorphous oxy-hydroxide. Roughening and loss of the nanostructure indicate a propagation of the reaction that modifies the bulk structure of the oxide film. Amorphisation can be reverted to crystallization by annealing under UHV at 1025 K when the surface of the oxide film has been modified, but not when the bulk structure has been modified.     

Laser synthesis of semiconductor nanostructures with narrow band gap

Semiconductor nanostructures with narrow band gap were synthesized by means of laser chemical vapor deposition (LCVD) of elements from iron carbonyl vapors [Fe(CO)₅] under the action of Ar⁺ laser radiation (λ_L = 488 nm) on the Si substrate surface. The temperature dependence of the specific conductivity of these nanostructures in the form of thin films demonstrated typical semiconductor tendency and gave the possibility to calculate the band gap for intrinsic conductivity (E_g) and the band gap assigned for impurities (E_i), which were depended upon film thickness and applied electrical field. Analysis of deposited films with scanning electron microscopy (SEM) and atomic force microscopy (AFM) demonstrated their cluster structure with average size not more than 100 nm. Semiconductor properties of deposited nanostructures were stipulated with iron oxides in different oxidized phases according to X-ray photoelectron spectroscopy (XPS) analysis.These deposited nanostructures were irradiated with Q-switched YAG laser (λ_L = 1064 nm) at power density about 6 × 10⁷ W/cm². This irradiation resulted in the crystallization process of deposited films on the Si substrate surface. The crystallization process resulted in the synthesis of iron carbide-silicide (FeSi_2−xC_x) layer with semiconductor properties too. The width of the band gap E_g of the synthesized layer of iron carbide-silicide was less than for deposited films based on iron oxides Fe₂O_3−x (0 ≤ x ≤ 1).     

Fabrication and analysis of buried iron silicide microstructures using a focused low energy electron beam

We fabricated iron and iron silicide microstructures on an Si(1 0 0) clean surface via electron beam induced process of Fe(CO)₅ multilayer and subsequent annealing. The fabricated microstructures were in situ analyzed by Auger electron spectroscopy (AES) and scanning electron microscopy (SEM). We successfully analyzed the coverage and chemical states of the artificial deposited iron structure area-selectively by AES. The artificial iron structure was fabricated after heating to above 350 K to desorb residual Fe(CO)₅ species. The artificial structure was observed even after 1190 K annealing by SEM, but AES measurements showed it to be covered by Si atoms. We concluded that the buried iron silicide microstructure was formed by the present process.     

Modulation structure in the STM images of the non-metallic misfit-layer compound (PbS)1.12VS2

This paper presents the scanning tunneling microscopy (STM) results of the misfit-layer compound (PbS)_1.12VS₂, which is constructed of alternately stacking of PbS (Q) and VS₂ (H) layers. Temperature dependent resistivity measurements show a semiconducting behavior with small activation energies. Unlike the metallic 1Q/1H type of compounds we have succeeded to take both the STM images of a Q layer and a H layer, because electron tunneling from the underlying H layer is suppressed when intermediate positive bias voltage (V_b) is applied to a tip. At V_b = 0.15 V the image shows pseudo-tetragonal arrays of bright spots, although it is obscure with decreasing bias voltage and disappears at less than 10 mV. A modulation structure is found on the H layer of a stepped surface on which surface atoms are undulated in a period being twice the V-V interatomic distance in the [1 0]_H or the [1 1]_H direction.     

Enhanced electrical stability of flexible indium tin oxide films prepared on stripe SiO2 buffer layer-coated polymer substrates by magnetron sputtering

The electrical stability of flexible indium tin oxide (ITO) films fabricated on stripe SiO₂ buffer layer-coated polyethylene terephthalate (PET) substrates by magnetron sputtering was investigated by the bending test. The ITO thin films with stripe SiO₂ buffer layer under bending have better electrical stability than those with flat SiO₂ buffer layer and without buffer layer. Especially in inward bending text, the ITO thin films with stripe SiO₂ buffer layer only have a slight resistance change when the bending radius r is not less than 8 mm, while the resistances of the films with flat SiO₂ buffer layer and without buffer layer increase significantly at r = 16 mm with decreasing bending radius. This improvement of electrical stability in bending test is due to the small mismatch factor α in ITO-SiO₂, the enhanced interface adhesion and the balance of residual stress. These results indicate that the stripe SiO₂ buffer layer is suited to enhance the electrical stability of flexible ITO film under bending.     

On the preparation and electronic properties of clean W(1 1 0) surfaces

We have studied the influence of oxygen pressure during the cyclic annealing used for the cleaning of W(1 1 0) surfaces. For this purpose the surface morphology and electronic properties are measured by means of scanning tunneling microscopy (STM) and spectroscopy (STS), respectively. It is found that the surfaces with impurity atom densities as low as 2 × 10⁻³ can be obtained by gradually reducing the oxygen pressure between subsequent annealing cycles down to about 2 × 10⁻⁸ mbar in the final cycle. Only on the clean surface a bias-dependent spatial modulation of the local density of states (LDOS) is observed at step edges and around impurity sites by STS. In addition, we find a pronounced peak in the occupied states. In combination with density functional theory calculations these features can be traced back to a dispersive p_z-d_xz-type surface resonance band and the lower band edge of a surface state, respectively.