Passively Q-Switched and mode-locked Nd:YVO<Subscript>4</Subscript> laser with sandwich structured wallpaper graphene oxide absorber

We report on a passively Q-switched and mode-locked Nd:YVO₄ laser using a novel low-cost wall-paper graphene oxide absorber. Sandwich structured wallpaper graphene oxide absorber was constructed by a high transmission mirror, a piece of wallpaper graphene oxide absorber and a reflective mirror. The average output power of 310 mW of passively Q-switched and mode-locked laser was successfully achieved. The repetition rate and pulse width of the Q-switched envelope were 213 kHz and 770 ns, respectively. The repetition rate of passively mode-locked pulse within the Q-switched envelope was 81.3 MHz with the pulse energy of 3.8 nJ.     

Diode-pumped Nd:YVO<Subscript>4</Subscript> laser passively Q-switched with graphene oxide spin coated on ITO substrate

Two graphene oxide saturable absorbers (GO-SAs) spin coated on indium tin oxide (ITO) substrate have been prepared and their transmissivity spectra have also been measured. The performance of the diode-pumped passively Q-switched Nd:YVO₄ laser with GO-SA has been investigated for the first time. The shortest pulse width of 113 ns and the highest peak power of 4.3 W are obtained at the pump power of 5.04 W. The output laser characteristics have demonstrated that graphene oxide is a promising saturable absorber for passive Q-switching.     

Diode-pumped passively mode-locked Nd:GdVO<Subscript>4</Subscript> laser with a GaAs saturable absorber mirror

We report on a diode end-pumped passively mode-locked Nd:GdVO₄ laser. By using a GaAs wafer simultaneously as the saturable absorber and the output coupler, stable continuous-wave mode locking was achieved. The pulse width was measured to be 18.9 picoseconds at a repetition rate of 370 MHz. The most remarkable property of the laser is that its repetition rate can be changed from 370 MHz to 3.348 GHz by simply changing the cavity length. An average output power of 3.46 W at a 3.348 GHz repetition rate was obtained with a 14 W pump power. To our knowledge, this is the first demonstration of a passively mode-locked Nd:GdVO₄ laser using a GaAs wafer as the saturable absorber. PACS 42.55.Rz; 42.60.Fc; 42.55.Xi.     

基于石墨烯的1 064 nm连续锁模超短脉冲激光器

介绍了利用沉积在增透镜上的石墨烯薄膜作为可饱和吸收体、808 nm激光二极管端面泵浦Nd∶YVO4晶体的1 064 nm连续锁模激光输出特性。采用W型折叠谐振腔结构,在808 nm泵浦功率为8.0 W时,有稳定的连续锁模脉冲输出,平均输出功率达到185 mW;当抽运功率增加到16.0 W时,获得了中心波长1 063.4 nm、脉冲宽度为518 fs、重复频率为66.7 MHz、最大平均输出功率为323 mW的百飞秒量级超短脉冲激光输出。实验结果表明:石墨烯具有优良的可饱和吸收性,在1 064 nm波段能够实现高功率、百飞秒量级连续锁模脉冲激光输出。     

Experimental study on a diode-pumped passively mode-locking Nd:GdVO<Subscript>4</Subscript>/SESAM laser

We demonstrate a low-threshold and efficient diode-pumped passively continuous wave (CW) mode-locked Nd:GdVO₄ laser with a reflective semiconductor saturable absorber mirror (SESAM). The threshold for the continuous wave was 0.36 W, and it is the lowest threshold for a continuous wave in a passively mode-locked Nd:GdVO₄ laser to our knowledge. The maximum average output power of 1.82 W was obtained at a pump power of 6.65 W with a slope efficiency of about 29%. The CW mode-locked pulse duration was measured to be about 10.5 ps with a 116-MHz repetition rate.     

Diode-pumped passively Q-switched and mode-locked Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser with a GaAs saturable absorber

By using a-cut Nd:Lu_0.15Y_0.85VO₄ mixed crystal as laser gain medium, a diode-pumped passively Q-switched and mode-locked (QML) laser with a GaAs saturable absorber in a Z-type folded cavity is demonstrated for the first time. The Q-switched mode-locked laser pulses with about 90% modulation depth are obtained as long as the pump power reached the oscillation threshold. The repetition rate of the passively Q-switched pulse envelope ranges from 50 to 186 kHz as the pump power increases from 0.915 to 6.520 W. Under an incident pump power of 6.52 W, the QML pulses with the largest average output power of 694 mW, the shortest pulse width of 200 ns and the highest pulse energy of 3.73 μJ are obtained. The mode-locked pulse width inside the Q-switched envelope is estimated to be about 275 ps. The experimental results show that Nd:Lu_0.15Y_0.85VO₄ is a promising mixed crystal for QML laser.     

LD end-pumped passively mode-locked Nd:YVO<Subscript>4</Subscript> laser with single-walled carbon nanotubes

We demonstrate a LD end-pumped passively mode-locked Nd:YVO₄ laser using a single-walled carbon nanotubes saturable absorber (SWCNT-SA). The SWCNT wafer was fabricated by electric arc discharge method on quartz substrate with absorption wavelength of 1064 nm. At the absorbed pump of 15.8 W, an output power of 750 mW CW (continuous wave) mode-locked laser pulse was achieved with the repetition of 79.7 MHz, corresponding to optical-optical efficiency of 4.75%.     

Passive mode-locked Nd:YVO<Subscript>4</Subscript> laser using a multi-walled carbon nanotube saturable absorber

We report a passive mode-locked Nd:YVO₄ laser pumped by 880 nm LD using a transmission-type multi-walled carbon nanotube saturable absorber. At the pump power of 6.1 W, the average output power of 0.8 W of continuous wave mode-locked laser with optical conversion efficiency of 13.1% was generated. The repetition rate and pulse energy of the mode-locked pulse were 88 MHz and 9.1 nJ, respectively.     

A 1.7-ps pulse mode-locked Yb3+:Sc2SiO5 laser with a reflective graphene oxide saturable absorber

By using a reflective graphene oxide as saturable absorber,a diode-pumped passively mode-locked Yb3+:Sc2Si O5(Yb:SSO)laser has been demonstrated for the first time.Without extra negative dispersion compensation,the minimum pulse duration of 1.7 ps with a repetition rate of 94 MHz was obtained at the central wavelength of 1062.6 nm.The average output power amounts to 355 m W under the absorbed pump power of 15 W.The maximum peak power of the mode-locking laser is up to 2.2 k W,and the single pulse energy is 3.8nJ.     

Analysis of a laser-diode end-pumped intracavity frequency-doubled passively Q-switched and mode-locked Nd:GdVO<Subscript>4</Subscript>/KTP laser with a semiconductor saturable absorber

A diode-pumped passively Q-switched mode-locked (QML) intracavity frequency-doubled Nd:GdVO₄/KTP green laser with a semiconductor saturable absorber is presented. Nearly 100% modulation depth for the mode-locked green pulses can be achieved at any pump power over 1.92 W. The width of the mode-locked green pulse was estimated to be about 150 ps. The mode-locked pulse interval within the Q-switched envelope of 320 ns and the repetition rate of 97.5 kHz were obtained, at an incident pump power of 4.4 W. The repetition rate of the mode-locked green pulses inside the Q-switched envelope was 140 MHz.     

Fabrication of aligned single wall carbon nanotube absorbers for high power passive mode-locked Nd:GdVO<Subscript>4</Subscript> laser

Using the vertical evaporation technique we fabricated saturable absorbers by transferring the water-soluble single wall carbon nanotubes (SWCNT) onto a hydrophilic quartz substrate. The fast recovery times of the absorber were measured to be 136 and 790 fs. The modulation depth of the absorber was about 2%. Passive mode-locked Nd:GdVO₄ laser using such an absorber was demonstrated. The continuous wave mode-locked pulses with the pulse duration of 12.4 ps and the repetition of 120 MHz were achieved. The maximum average output power of the mode-locked laser is 2.4 W at the pump power of 13 W. Such kind of absorber has potential to be put into practical use for high power solid-state laser mode locking.     

Diode-pumped passively mode-locked Nd:CaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> laser

We have experimentally demonstrated a diode-pumped passively mode-locked Nd:CaNb₂O₆ laser for the first time to our best knowledge. With a semiconductor saturable absorber mirror (SESAM) as a passive mode locker, the laser generated stable mode-locked pulses with pulse duration of 17.3 ps and repetition rate of 88.4 MHz. With a singe-emitter laser diode pumping, the maximum average output power of the mode-locked laser was 0.843 W, with a slope efficiency of 23%. The experimental results show the Nd:CaNb₂O₆ crystal is a promising laser gain medium for picosecond pulse generation.     

High-efficiency 17 W, 80 MHz repetition rate,passively mode-locked TEM<Subscript>00</Subscript> Nd:YAG oscillator pumped at 885 nm

We report on a passively mode-locked TEM₀₀ Nd:YAG oscillator with the beam quality at M ² = 1.1 by a semiconductor saturable absorber mirror under 885 nm laser diode direct pumping for the first time. A maximum average output power of 17 W at a repetition rate of 80 MHz with 39 ps pulse width was obtained under the absorbed pump power of 38 W, corresponding to an optical-optical efficiency of 44% and the slope efficiency of 69%, respectively.     

Diode-pumped passively Q-switched mode-locked Nd:LuVO4 laser with a semiconductor saturable absorber mirror

We present a compact passively Q-switched mode-locked Nd:LuVO₄ laser run in a Z-type folded cavity with semiconductor saturable absorber mirror (SESAM). The repetition rates of the passively Q-switched pulse envelope ranges from 22.99 to 141.18 kHz as the pump power increased from 2.372 to 8.960 W. The repetition rates of mode-locked laser pulses in the Q-switched pulse envelope has 111 MHz determined by the cavity length and the mode-locked pulse duration is evaluated to be 257 ps. An average output power of 823.5 mW is achieved at the pump power of 8.96 W, corresponding to an optical conversion efficiency of 9.2%.     

Compact diode-directly-pumped passively mode-locked TEM<Subscript>00</Subscript> Nd:GdVO<Subscript>4</Subscript> laser at 1341 nm using a semiconductor saturable absorber mirror

We report on a compact 880-nm diode-directly-pumped passively mode-locked TEM₀₀ Nd:GdVO₄ laser at 1341 nm with a semiconductor saturable absorber mirror (SESAM) for the first time. Under the absorbed pump power of 14.6 W, the maximum output power of 1.27 W was obtained at the repetition rate of 85.3 MHz with the pulse width of 45.3 ps, corresponding to an optical-optical efficiency of 8.8% and the slope efficiency of 33.3%, respectively. The beam quality factor was measured to be M ² = 1.18, indicating a TEM₀₀ mode.     

High efficiency passive mode-locked Nd:YVO<Subscript>4</Subscript> laser based on SESAM under direct pumping at 880 nm

We report on an 880 nm LD pumped passive mode-locked TEM₀₀ Nd:YVO₄ laser based on a semiconductor saturable absorber mirror (SESAM), with a high optical-to-optical conversion efficiency of 67.3%, and a slope efficiency of 71%. When the absorbed pump power was 11 W, 7.4 W average output power of 1064 nm continuous-wave mode-locked laser was achieved. To our knowledge, this is the highest optical-to-optical conversion efficiency among all the published reports of 880 nm LD pumped SESAM passive mode-locked lasers. The repetition rate of mode-locked pulse was 80 MHz with 26 ps pulse width. The maximum pulse energy and peak power were 92.5 nJ and 3.6 kW, respectively.     

Passive Q-switching performance with Co:LMA crystal in a diode-pumped Nd:LuVO<Subscript>4</Subscript> laser

A diode-pumped passively Q-switched Nd:LuVO₄ 1.34 μm laser using Co:LMA saturable absorber was successfully demonstrated. The average output power, pulse width, repetition rate of a-cut and c-cut Nd:LuVO₄ lasers were studied with different output couplers. The maximum average output power of 164 mW was obtained at the pump power of 10.3 W and the narrowest pulse width of 168 ns was achieved at repetition rate of 457 kHz under pump power of 8.59 W in a-cut Nd:LuVO₄ laser with T = 8%.     

High-power passively Q-switched Nd:YVO<Subscript>4</Subscript> UV laser at 355 nm

We report on an efficient high-power passively Q-switched UV laser at 355 nm. We take into account the second threshold criterion and the thermal-lensing effect to design and realize a compact reliable passively Q-switched Nd:YVO₄ laser with Cr⁴⁺:YAG as a saturable absorber. At an incident pump power of 16.3 W, the average output power at 1064 nm reaches 6.2 W with a pulse width of 7 ns and a pulse repetition rate of 56 kHz. Employing the developed passively Q-switched laser to perform the extra-cavity harmonic generations, the maximum average output powers at 532 nm and 355 nm are up to 2.2 W and 1.62 W, respectively.     

Passively Q-switched <Emphasis Type="Italic">a</Emphasis>-cut Nd:YVO<Subscript>4</Subscript> self-Raman laser

A passively Q-switched a-cut Nd:YVO₄ self-stimulating Raman laser using a Cr:YAG saturable absorber has been demonstrated for the first time. The maximum average output power of the self-Raman laser at 1176 nm is 347 mW at the incident pump power of 10 W with a pulse repetition frequency (PRF) of 66 kHz. The pulse width, pulse energy of the 1176 nm are found to be 10 ns and 5.6 μJ. The conversion efficiency from diode laser input power to Raman output power is 3.47%.     

Continuous-wave passively mode-locked Nd:YVO<Subscript>4</Subscript>/KTP green laser with a semiconductor saturable absorber mirror

A diode-pumped passively mode-locked low-doped Nd:YVO₄ green laser with a semiconductor saturable absorber mirror (SESAM) and an intracavity frequency-doubling KTP crystal is demonstrated. In order to efficiently release the thermal effect, a low-doped Nd:YVO₄ crystal with the Nd³⁺ concentration of 0.1 at % is employed as the gain medium. The maximum average output power of 3.1 W at 532 nm with a repetition rate of 102 MHz is obtained under the pump power of 25 W, corresponding to an optical conversion efficiency of 12.4%. The 532 nm mode locked pulse width is estimated to be approximately 6.1 ps.