A new optical method for measuring the electron-phonon interaction parameter λ〈Ω2〉 using the spectral dependence of the relaxation rate

The spectral dependence of the electron-phonon relaxation rate γ_e−ph(ℏω) in metals is studied in pump-supercontinuum-probe (PSCP) experiments with femtosecond time resolution. Investigation of this spectral dependence, which exhibits a substantial slowing of the relaxation rate γ_e−ph(ℏω) near the Fermi level E _F , using the parametrization γ_e−ph(ℏω)∝λ〈Ω²〉 (ℏω−E _F )² makes it possible to determine directly the electron-phonon interaction parameter λ〈Ω²〉. The parameter λ〈Ω²〉 for YBa₂Cu₃O_7−δ is analyzed using this method. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 5, 329–332 (10 September 1999)     

Bell Inequalities as Constraints on Unmeasurable Correlations

The interpretation of the violation of Bell-Clauser-Horne inequalities is revisited, in relation with the notion of extension of QM predictions to unmeasurable correlations. Such extensions are compatible with QM predictions in many cases, in particular for observables with compatibility relations described by tree graphs. This implies classical representability of any set of correlations 〈A _i 〉, 〈B〉, 〈A _i B〉, and the equivalence of the Bell-Clauser-Horne inequalities to a non void intersection between the ranges of values for the unmeasurable correlation 〈A ₁ A ₂〉 associated to different choices for B. The same analysis applies to the Hardy model and to the “perfect correlations” discussed by Greenberger, Horne, Shimony and Zeilinger. In all the cases, the dependence of an unmeasurable correlation on a set of variables allowing for a classical representation is the only basis for arguments about violations of locality and causality.     

Large-scale amplification of a magnetic field by turbulent helicity fluctuations

In this paper the procedure of large-scale averaging of the magnetic-field diffusion equation with the α-term curlα(r,t)B(r,t) is used to show that a nonuniform distribution of the turbulent helicity fluctuations (more precisely, the fluctuations of the coefficient α) with a zero average value gives rise to large-scale amplification of the initial magnetic field. A detailed study is carried out of the dependence of the resulting large-scale α effect on the characteristics of the correlator 〈〈α(r, t)α(r″,t″)〉〉 in a rotating medium with a nonuniform distribution of the angular velocity ω=ω(ρ,z) (ρ is the distance for the rotation axis z). The effect of helicity fluctuations and the diffusion coefficient on the turbulent diffusion process is also investigated. Zh. éksp. Teor. Fiz. 116, 85–104 (July 1999)     

Smoothening transition of a two-dimensional pressurized polymer ring

We revisit the problem of a two-dimensional polymer ring subject to an inflating pressure differential. The ring is modeled as a freely jointed closed chain of N monomers. Using a Flory argument, mean-field calculation and Monte Carlo simulations, we show that at a critical pressure, p_c ∼ N^-1, the ring undergoes a second-order phase transition from a crumpled, random-walk state, where its mean area scales as 〈A〉 ∼ N, to a smooth state with 〈A〉 ∼ N². The transition belongs to the mean-field universality class. At the critical point a new state of polymer statistics is found, in which 〈A〉 ∼ N^3/2. For p ≫ p_c we use a transfer-matrix calculation to derive exact expressions for the properties of the smooth state.     

Anisotropy of the upper critical field and specific heat in V3Si — a superconductor with cubic symmetry

The specific heat of a V₃Si single crystal (T _c=17 K, H _c2=20 T) in magnetic fields up to 8 T isinvestigated experimentally for three orientations of the field relative to the crystallographic directions — H∥〈001〉, H∥〈110〉, and H∥〈111〉. Both the upper critical magnetic field and the specific heat of the mixed state are observed to depend on the orientation of the magnetic field relative to the crystallographic directions (anisotropy): The critical field reaches its maximum value and the specific heat its minimum value in a field along the 〈001〉 direction. The anisotropy scale in both phenomena increases as the magnetic field and reaches 3% in a 6 T field. The interrelationship of the upper critical field anisotropy and the specific-heat anisotropy in type-II superconductors is studied. It is shown that the anisotropy of the specific heat in the mixed state in weak fields can serve as a criterion for nontrivial pairing. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 1, 26–29 (10 January 1999)     

Spectral rigidity and eigenfunction correlations at the Anderson transition

The statistics of energy levels for a disordered conductor are considered in the critical energy window near the mobility edge. It is shown that, if the critical wave functions are multifractal, the one-dimensional gas of levels on the energy axis is compressible, in the sense that the variance of the level number in an interval is 〈 (δN)²〉∼χ〈N〉 for 〈N〉≫1. The compressibility, χ=η/2d, is given exactly in terms of the multifractal exponent η =d−D ₂ at the mobility edge in a d-dimensional system. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 5, 355–360 (10 September 1996) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Theory of melting,vacancy model

A theory of melting based on vacancy model is formulated. The polymer solution theory is used for derivation of the melting equation for a two-species model of melting solid. Under simplifying assumptions the analysis leads to a simple correlation betweenT _m and 〈v〉, the average energy of interaction between the vibrating atoms. Pseudopotential method is used for calculating 〈v〉 for the alkali metals lithium, sodium, potassium and rubidium at temperatureT _m. The calculated values ofT _m〈v〉 are in accord with those expected from our model. Application to the high pressure melting curves of solids is also discussed.     

Realization of a heavily doped and fully compensated semiconductor state in a crystalline semiconductor with a deep impurity band

We use the data on the pressure (up to P=1.5 GPa) and field (up to H=17 kOe) dependence of the Hall coefficient and the resistivity at 77.6 and 300 K in p-CdSnAs₂〈Cu〉 to calculate the effective kinetic characteristics of the charge carriers, the density and mobility of the conduction electrons and the holes of the deep acceptor and valence bands, in an interval of excess-acceptor densities N _ext ranging from 10¹⁰–10¹⁷ cm⁻³. We establish that in a heavily doped semiconductor with a deep impurity band at the tail of the density of states of the intrinsic band, with unequal donor and acceptor densities, a a heavily doped and fully compensated semiconductor state is realized under hydrostatic compression. The threshold value of the pressure that initiates the transition into such a state, P _c, depends on the extent to which the impurity band is populated. In p-CdSnAs₂〈Cu〉 at N _ext=N _A, where N _A is the density of deep acceptors, and T⩽77.6 K the value of P _c amounts to 10⁻⁴ GPa. As the population of the deep acceptor band grows, P _c increases and in the limit becomes infinite. We discuss the special features of the electrophysical properties of p-CdSnAs₂〈Cu〉 arising from the absence of an energy gap between the states of the conduction band and those of the deep acceptor band. Zh. éksp. Teor. Fiz. 111, 562–574 (February 1997)     

Effect of focusing of primary electrons on their reflection from a crystal and on the associated Auger emission

The orientational dependence for different groups of secondary electrons — quasi-elastically scattered, inelastically reflected with excitation of a plasmon and with ionization of the core level M _4.5, and the Auger electrons M _4.5 VV — are measured in the primary electron energy range 0.6–1.5 keV. The data are obtained for a Nb (100) single crystal by varying the azimuthal angle of incidence of the primary beam, with complete collection of secondaries. A relationship is established between the processes of focusing and defocusing of the electrons that have penetrated into the crystal in the 〈110〉 and 〈133〉 directions, which differ substantially in the atomic packing density. Specific details of the Auger orientation effect, due to the focusinginduced variation of the flux density of the reflected electrons, are identified and explained. The contributions, both of anisotropy of ionization of the core level and of variation of the backscattering intensity, to the angular dependence of Auger emission and reflection with ionization loss are estimated. The possibilities of using such orientational dependences for an element-sensitive analysis of the local atomic structure of surfaces are assessed. Zh. Tekh. Fiz. 67, 117–123 (August 1997)     

Manganese energy level in <Emphasis Type="Italic">p</Emphasis>-InAs〈Mn〉 under pressure

Resistivity ρ and the Hall coefficient R _H at atmospheric pressure in the temperature range of 77–400 K and the dependences of these parameters (ρ(P) and R _H(P)) and magnetic susceptibility (χ(P)) on hydrostatic pressures of up to P ≤ 7 GPa at 300 K in p-InAs〈Mn〉 single crystals was investigated. The baric coefficients of the ionization energy of Mn impurity centers and the pressure dependence of the dielectric constant ɛ(P) were determined.     

Mean square number fluctuation for a fermion source and its dependence on neutrino mass for the universal cosmic neutrino background

Using the general formulation for obtaining chemical potentialμ of an ideal Fermi gas of particles at temperature T, with particle rest mass m₀ and average density 〈N〉/V, the dependence of the mean square number fluctuation 〈ΔN ²〉/V on the particle mass m₀ has been calculated explicitly. The numerical calculations are exact in all cases whether rest mass energym ₀c² is very large (non-relativistic case), very small (ultra-relativistic case) or of the same order as the thermal energy k_BT. Application of our results to the detection of the universal very low energy cosmic neutrino background (CNB), from any of the three species of neutrinos, shows that it is possible to estimate the neutrino mass of these species if from approximate experimental measurements of their momentum distribution one can extract, someday, not only the density 〈N _v〉/V but also the mean square fluctuation 〈Δ _v ² 〉/V. If at the present epoch, the universe is expanding much faster than thermalization rate for CNB, it is shown that our analysis leads to a scaled neutrino massm _v instead of the actual massm _0v .     

Bilepton contributions to the neutrinoless double beta decay in the economical 3-3-1 model

A new bound of the mixing angle between charged gauge bosons (the standard-model W and the bilepton Y) in the economical 3-3-1 model is given. Possible contributions of the charged bileptons to the neutrinoless double beta ((ββ)_0ν) decay are discussed. We show that the (ββ)_0ν decay in this model is due to both the Majorana 〈M _ν〉 _L and Dirac 〈M _ν 〉_D neutrino masses. If the mixing angle is in the range of the ratio of neutrino masses 〈M _ν 〉 _L /〈M _ν 〉_D, the Majorana and Dirac masses are comparable to each other and both may give the main contribution to the decay. As a result, constraints on the bilepton mass are given. The article is published in the original.     

Specific features in the temperature dependence of photoluminescence from CdTe/ZnTe size-quantized islands and ultrathin quantum wells

A study has been carried out of the temperature dependences of luminescence spectra on a large number of CdTe/ZnTe structures differing in average thickness, 〈L _z〉=0.25–4 monolayers (ML), and CdTe layer geometry (continuous, island type). The influence of geometric features in the structure of ultrathin layers on linewidth, the extent of lateral localization of excitons, their binding energy, and exciton-phonon coupling is discussed. It is shown that in island structures there is practically no lateral exciton migration. The exciton-phonon coupling constant in a submonolayer structure has been determined, Γ_ph=53 meV, and it is shown that in structures with larger average thicknesses Γ_ph is considerably smaller. Substantial lateral exciton migration was observed to occur in a quantum well with 〈L _z〉=4 ML, and interaction with acoustic phonons was found to play a noticeable part in transport processes. It has been established that the depth of the exciton level in a quantum well and structural features of an ultrathin layer significantly affect the temperature dependences of integrated photoluminescence intensity. Fiz. Tverd. Tela (St. Petersburg) 41, 717–724 (April 1999)     

Scales in nuclear matter: Chiral dynamics with pion nucleon form factors<Superscript>⋆</Superscript>

A systematic calculation of nuclear matter is performed which includes the long-range correlations between nucleons arising from one- and two-pion exchange. Three-body effects from 2π exchange with excitations of virtual Δ(1232)-isobars are also taken into account in our diagrammatic calculation of the energy per particle ˉ(k _f). In order to eliminate possible high-momentum components from the interactions we introduce at each pion-baryon vertex a form factor of monopole type. The empirical nuclear matter saturation point, ρ₀ ≃ 0.16fm^-3, ˉ₀ ≃ - 16MeV, is well reproduced with a monopole mass of Λ ≃ 4πf _π ≃ 1.16GeV. As in the recent approach based on the universal low-momentum NN potential V _low-k, the inclusion of three-body effects is crucial in order to achieve saturation of nuclear matter. We demonstrate that the dependence of the pion exchange contributions to ˉ(k _f) on the “resolution” scale Λ can be compensated over a wide range of Λ by counterterms with two “running” contact couplings. As a further application we study the in-medium chiral condensate 〈ˉq〉(ρ) beyond the linear density approximation. For ρ ⩽ 1.5ρ₀ we find small corrections from the derivative dˉ(k _f)/dm _π, which are stable against variations of the monopole regulator mass Λ.     

Swelling of two-dimensional polymer rings by trapped particles

The mean area of a two-dimensional Gaussian ring of N monomers is known to diverge when the ring is subject to a critical pressure differential, p _c ∼ N ^-1. In a recent publication (Eur. Phys. J. E 19, 461 (2006)) we have shown that for an inextensible freely jointed ring this divergence turns into a second-order transition from a crumpled state, where the mean area scales as 〈A〉 ∼ N, to a smooth state with 〈A〉 ∼ N ². In the current work we extend these two models to the case where the swelling of the ring is caused by trapped ideal-gas particles. The Gaussian model is solved exactly, and the freely jointed one is treated using a Flory argument, mean-field theory, and Monte Carlo simulations. For a fixed number Q of trapped particles the criticality disappears in both models through an unusual mechanism, arising from the absence of an area constraint. In the Gaussian case the ring swells to such a mean area, 〈A〉 ∼ NQ, that the pressure exerted by the particles is at p _c for any Q. In the freely jointed model the mean area is such that the particle pressure is always higher than p _c, and 〈A〉 consequently follows a single scaling law, 〈A〉 ∼ N ² f (Q/N), for any Q. By contrast, when the particles are in contact with a reservoir of fixed chemical potential, the criticality is retained. Thus, the two ensembles are manifestly inequivalent in these systems. An erratum to this article is available at .     

Donors in a strong magnetic field and elastic magnetic-impurity resonance in diamondlike semiconductors

The possibility of resonance during elastic intravalley scattering in n-type semiconductors is investigated in connection with the crossing (due to anisotropy of the effective mass) of the energy levels of excited states of a shallow donor as functions of the magnetic field. The hybridization of states of different frequencies in the vicinity of a crossing is attributed to the emergence of a nonzero dipole moment of the excited impurity atom and, accordingly, a long-range potential, which creates carrier-transport anomalies. The lower part of the donor spectrum is calculated as a function of the magnetic field in Si with B∥〈001〉 and in Ge with B∥〈111〉 or B∥〈110〉. A crossing occurs in Ge in the field range 9.9 T<B<16.7 T and in Si in the field range 10.5 T<B<37.7 T. The characteristic longitudinal relaxation time and the transverse conductivity, which are determined by scattering at excited donors in the presence of the hybridization of states, are calculated. Zh. éksp. Teor. Fiz. 112, 975–1010 (September 1997)     

Orientation dependence of electrical properties of 0.96Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-0.04BaTiO<Subscript>3</Subscript> lead-free piezoelectric single crystal

In this paper, a single crystal of 0.96Na_0.5Bi_0.5TiO₃-0.04BaTiO₃ with dimensions of Φ 30×10 mm was grown by the top-seeded-solution growth method. X-ray powder diffraction results show that the as-grown crystal possesses the rhombohedral perovskite-type structure. The dielectric, piezoelectric and electrical conductivity properties were systematically investigated with 〈001〉, 〈110〉 and 〈111〉 oriented crystal samples. The room-temperature dielectric constants for the 〈001〉, 〈110〉 and 〈111〉 oriented crystal samples are found to be 650, 740 and 400 at 1 kHz. The (T _m, ε _m) values of the dielectric temperature spectra are almost independent of the crystal orientations; they are (306°C, 3718), (305°C, 3613) and (307°C, 3600) at 1 kHz for the 〈001〉, 〈110〉 and 〈111〉 oriented crystal. The optimum poling conditions were obtained by investigating the piezoelectric constants d ₃₃ as a function of poling temperature and poling electric field. For the 〈001〉 and 〈110〉 crystal samples, the maximum d ₃₃ values of 146 and 117 pC/N are obtained when a poling electric field of 3.5 kV/mm and a poling temperature of 80°C were applied during the poling process. The as-grown 0.96Na_0.5Bi_0.5TiO₃-0.04BaTiO₃ crystal possesses a relatively large dc electrical conductivity, especially at higher temperature, having a value of 1.98×10⁻¹¹ Ω⁻¹⋅m⁻¹ and 3.95×10⁻⁹ Ω⁻¹⋅m⁻¹ at 25°C and 150°C for the 〈001〉 oriented crystal sample.     

Distribution of the conductance of a linear chain of tunnel barriers with fractal disorder

Distributions of the conductance G of a long quantum wire with the fractal distribution of barriers have been obtained in the successive incoherent tunneling regime. The asymptotic behavior (in the limit L → ∞) of moments 〈G ^k (L)〉, average power of the shot noise 〈S(L)〉, and Fano factor agree with the results of the work [C. W. J. Beenakker et al., Phys. Rev. B 79, 024204 (2009)], and the distributions themselves describe well the Monte Carlo simulation results. The equation that has been obtained for the distributions of the resistance and conductance agrees with the recent fractional differential generalization of the Dorokhov-Mello-Pereyra-Kumar equation for the quasi-one-dimensional multichannel disordered semiconductors with a self-similar distribution of scatterers.     

Temperature scaling of ferroelectric hysteresis in hard lead zirconate titanate bulk ceramic

The temperature scaling of the ferroelectric hysteresis was investigated in hard lead zirconate titanate (PZT) bulk ceramic. The power-law temperature scaling relations were obtained for hystersis area 〈A〉, remnant polarization P_r, and coercivity E_C in the forms of 〈A〉∝T^-0.9650, P_r∝T^-0.0261, and E_C∝T^-0.8823, respectively, which are mostly comparable to those of its soft counterpart. The observation that P_r decayed more slowly with temperature than in soft PZT was attributed to the presence of the complex defects in hard PZT. However, the product of P_r and E_C still provided the similar scaling law on the T dependence in comparison with 〈A〉. PACS 77.80.-e; 77.80.Fm; 77.84.-s; 77.84.Dy     

Statistical mechanics of braided Markov chains: I. Analytic methods and numerical simulations

We investigate numerically and analytically the statistics of Markov chains on so-called braid (B _n ) and locally free (ℒℱ _n ) groups. Namely, we compute the mean length 〈μ〉 and the variance 〈μ²〉−〈μ〉² of the shortest word which remains after applying of all group relations to the randomly generatedN-letter word (Markov chain). We express the conjecture (numerically justified) that the mean value 〈μ〉 for the random walk on the groupB _n (n≫1) coincides with high accuracy with the same value for the random walk on the “locally free group weth errors” if the number of errors is of order of 20%.