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1.
A remoderator for the high intensity positron source NEPOMUC was developed and installed at the beam facility. A beam of remoderated positrons could be produced with different energies and a diameter of less than 2 mm was obtained. The efficiency of the remoderation setup was determined to be 5%. Due to the brilliance of the remoderated beam, the measurements at the coincidence Doppler broadening spectrometer (CDBS) and at the positron annihilation induced Auger electron spectrometer (PAES) could be improved. The setup and functionality of the remoderation device is presented as well as the first measurements at the remoderator, CDBS and PAES.  相似文献   

2.
The surfaces of polycrystalline Cu, Au-coated Cu, Si(1 0 0) and of Si(1 0 0) coated with 1.5 monolayer Cu were investigated with positron annihilation induced Auger-electron spectroscopy (PAES). Since the electron background has been reduced considerably we observed the Cu M2,3VV-Auger transition on a copper surface within only three hours which is the shortest acquisition time reported so far for PAES. In order to demonstrate PAES’ high potential the Auger-yield, the signal-to-background ratio as well as the surface selectivity were compared with accompanying EAES-measurements quantitatively. A more efficient electron energy analyzer for the present PAES setup would lead to an additional efficiency gain of more than two orders of magnitude. The presented measurements were performed at the low-energy positron beam of high intensity NEPOMUC at the research reactor FRM II.  相似文献   

3.
The NEutron-induced POsitron source MUniCh (NEPOMUC) at the research reactor FRM II delivers a low-energy positron beam (E = 15-1000 eV) of high intensity in the range between 4 × 107 and 5 × 108 moderated positrons per second. At present four experimental facilities are in operation at NEPOMUC: a coincident Doppler-broadening spectrometer (CDBS) for defect spectroscopy and investigations of the chemical vicinity of defects, a positron annihilation-induced Auger-electron spectrometer (PAES) for surface studies and an apparatus for the production of the negatively charged positronium ion Ps. Recently, the pulsed low-energy positron system (PLEPS) has been connected to the NEPOMUC beam line, and first positron lifetime spectra were recorded within short measurement times. A positron remoderation unit which is operated with a tungsten single crystal in back reflection geometry has been implemented in order to improve the beam brilliance. An overview of NEPOMUC's status, experimental results and recent developments at the running spectrometers are presented.  相似文献   

4.
Changes in the surface of an oxidized Cu(1 0 0) single crystal resulting from vacuum annealing have been investigated using positron annihilation induced Auger electron spectroscopy (PAES). PAES measurements show a large increase in the intensity of the annihilation induced Cu M2,3VV Auger peak as the sample is subjected to a series of isochronal anneals in vacuum up to annealing temperature 300 °C. The intensity then decreases monotonically as the annealing temperature is increased to ∼600 °C. Experimental probabilities of annihilation of surface-trapped positrons with Cu 3p and O 1s core-level electrons are estimated from the measured intensities of the positron annihilation induced Cu M2,3VV and O KLL Auger transitions. Experimental PAES results are analyzed by performing calculations of positron surface states and annihilation probabilities of surface-trapped positrons with relevant core electrons taking into account the charge redistribution at the surface, surface reconstructions, and electron-positron correlations effects. The effects of oxygen adsorption on localization of positron surface state wave function and annihilation characteristics are also analyzed. Possible explanation is proposed for the observed behavior of the intensity of positron annihilation induced Cu M2,3VV and O KLL Auger peaks and probabilities of annihilation of surface-trapped positrons with Cu 3p and O 1s core-level electrons with changes of the annealing temperature.  相似文献   

5.
The accumulation of positrons in a two-dimensional layer of tin embedded in aluminum is examined by Doppler broadening spectroscopy (DBS). For this purpose samples are grown out of high purity materials consisting of a step-shaped layer (0.1-200 nm) of tin on a substrate of aluminum and covered by an aluminum layer of constant thickness (200 nm).The positron implantation profile is varied by different positron acceleration energies of up to 15 keV. The pre-thermal implantation profile of the monoenergetic positron beam is examined since the effect of thermal positron diffusion is less significant at tin layers thicker than 50 nm. At thin layers (<50 nm), the positrons greatly accumulate either at the aluminum-tin interface or in the tin layer due to its higher positron affinity compared to aluminum. Thus a very high sensitivity of the measurement for low densities of tin is observed. Consequently from the experimental results, a sensitivity threshold for the detection of a low amount of tin in an aluminum matrix with DBS is determined. The DB results are compared to theory by an approximation for pre-thermal implantation in layered materials.  相似文献   

6.
A radioisotope slow positron beam has been built at the Chung Yuan Christian University in Taiwan for the research and development in membrane science and technology. Doppler broadening energy spectra and positron annihilation lifetime have been measured as a function of positron energy up to 30 keV in a polyamide membrane prepared by the interfacial polymerization between triethylenetetraamine (TETA) and trimesoyl chloride (TMC) on modified porous polyacrylonitrile (PAN) asymmetric membrane. The multilayer structures and free-volume depth profile for this asymmetric membrane system are obtained. Positron annihilation spectroscopy coupled with a slow beam could provide new information about size selectivity of transporting molecules and guidance for molecular designs in polymeric membranes.  相似文献   

7.
The new research reactor FRM-II near Munich has a strong positron source, which delivers an intense, nearly monoenergetic positron beam. Our positron systems, the pulsed low energy positron source (PLEPS) and the scanning positron microscope (SPM) will be operated at this beam. Some aspects of matching these systems to the new positron source will be discussed.Considerable improvements are expected, e.g. more than 105 s−1 recorded events at PLEPS and sub-micrometre resolution at SPM. They will enable investigations in so far inaccessible problems like the evaluation of annihilation characteristics and trapping constants of individual defects or studies of fast dynamical processes. In applied materials science complex defect structures will be studied which demand a resolution into many differing lifetimes, e.g. fractured specimens, wear, corrosion, etc. Also large series of measurements at small systematic modifications are planned. There is also the opportunity to analyse in addition the chemical microstructure of the specimens by means of a hydrogen microprobe and other ion beam techniques available close to FRM-II at the Technical University of Munich.  相似文献   

8.
In order to study the depth-dependent characteristics of open-volume defects in thin surface layers, the variable-energy positron lifetime spectroscopy (VEPLS) has been enabled by pulsing a continuous positron beam. The buncher is a quarter-wave coaxial resonator and the RF-signal is fed in by a coupling loop with a frequency of 149.89 MHz and the reflection factor of 0.05 measured by a Network Analyzer. Three synchronic signals with their phases and amplitudes adjusted independently are supplied for start signal of the positron lifetime measurement and the power signal by an electronic system. The stop signal is derived from a detector, a BaF2 scintillator coupled to a photomultiplier-tube (Hamamatsu). The time resolution of 295 ps (FWHM) was achieved for a Kapton film and a Ti sample at positron energies in the range between 1 keV and 30 keV.  相似文献   

9.
A system for positron beam-based Doppler broadening spectroscopy of the formation and evolution of monovacancy defects in silicon is described. The apparatus allows in situ ion implantation at low temperatures (∼50 K) followed by positron beam assay. First measurements for 6 keV He implantation, at post-implant temperatures between 60 and 300 K are presented. Benefits and drawbacks of this system are discussed.  相似文献   

10.
The high intensity positron source NEPOMUC at the FRM-II in Munich enables measurement times for positron annihilation-induced Auger electron spectroscopy (PAES) of only 2.4 h/spectrum, in contrast to usual lab beams with measurement times up to several days. The high electron background due to surrounding experiments in the experimental hall of the FRM-II has been eliminated and hence background free experiments have become possible. Due to this, the signal to noise ratio has been enhanced to 4.5:1, compared to 1:3 with EAES. In addition, a long-term measurement has been performed in order to observe the contamination of a polycrystalline copper foil at 150 °C.  相似文献   

11.
Measurements of the positron annihilation-induced Auger electron (PAES) spectra from the Fe-Cu alloy surfaces with quantum-dot-like Cu nanoparticles embedded in Fe reveal a decrease of the Fe M2,3VV positron annihilation-induced Auger signal intensity and an enhancement of the Cu one for surfaces created by enriching the Cu content of the Fe-Cu alloy. These experimental results are analyzed by performing calculations of positron surface states and annihilation characteristics at the Fe(1 0 0) surface with quantum-dot-like Cu nanoparticles embedded in the top atomic layers of the host substrate. Estimates of the positron binding energy and annihilation characteristics reveal their strong sensitivity to the nanoparticle coverage. Theoretical core annihilation probabilities are compared with experimental ones estimated from the measured Auger peak intensities. The observed behavior of the Fe and Cu PAES signal intensities is explained by theoretical calculations as being due to trapping of positrons in the regions of Cu nanoparticles embedded in the top atomic layers of Fe.  相似文献   

12.
GaN with its wide bandgap might be of interest as a positron moderation material in much the same way as SiC is. To investigate this, positron beam experiments have been performed to establish the diffusion behaviour and surface branching of positrons implanted with energies varying from 0 to 25 keV into an epitaxially grown layer of semi-insulating GaN on a sapphire substrate. The measured diffusion length of the positrons amounted to 19.3 ± 1.4 nm. The surface branching ratios were as follows: 48% positron emission, 12% positronium formation and 40% trapping at the surface. The positron workfunction was shown to be negative with a value of 2.4 ± 0.3 eV. The materials feasibility for positron moderation and its possible use in field assisted moderation is discussed.  相似文献   

13.
EPOS, the acronym of ELBE Positron Source, describes a running project to build an intense pulsed beam of mono-energetic positrons (0.2-40 keV) for materials research. Positrons will be created via pair production at a tungsten target using the pulsed 40 MeV electron beam of the superconducting linac electron linac with high brilliance and low emittance (ELBE) at Forschungszentrum Rossendorf (near Dresden, Germany). The chosen design of the system under construction is described and results of calculations simulating the interaction of the electron beam with the target are presented, and positron beam formation and transportation is also discussed.  相似文献   

14.
Crystal defects in magnesium and magnesium-based alloys like AZ31 are of major interest for the understanding of their macroscopic properties. Coincident Doppler broadening spectroscopy with positrons (CDBS) is a well-established technique to investigate lattice defects and their chemical surrounding in solids. However, Mg and its alloys are demanding materials for positron spectroscopy, since the trapping rate in Mg is low and the trapping sites are shallow. In order to increase the trapping rate, the CDBS-facility at the high intense positron beam NEPOMUC is currently redesigned and improved with a cryostat for sample cooling. Furthermore, the recently installed remoderator provides a beam energy between 20 and 200 eV. On the contrary to the previous beam energy of 1 keV, the beam is therefore no longer non-adiabatically released from the magnetic field at the grounded field termination. Hence it is necessary to construct an insulated field termination where voltages up to 5 kV can be applied.  相似文献   

15.
The University of Hong Kong positron beam employs conventional magnetic field transport to the target, but has a special hybrid lens design around the positron moderator that allows the beam to be focused to millimeter spot sizes at the target. The good focusing capabilities of the beam are made possible by extracting work-function positrons from the moderator in a magnetic field free region using a conventional Soa lens thus minimizing beam canonical angular momentum. An Einzel lens is used to focus the positrons into the magnetic funnel at the end of transportation magnetic field while at the same time bringing up the beam energy to the intermediate value of 7.5 keV. The beam is E × B filtered at this intermediate energy. The final beam energy is obtained by floating the Soa-Einzel system, E × B filter and flight tube, and accelerating the positrons just before the target. External beam steering saddle coils fine tune the position, and the magnetic field around the target chamber is adjusted so as to keep one of the beam foci always on the target. The system is fully computer controlled. Variable energy-Doppler broadened annihilation radiation (VEDBAR) data for a GaN sample are shown which demonstrate the performance of the positron beam system.  相似文献   

16.
In this paper, the determination of the defects induced by 20 MeV Au irradiations in hexagonal silicon carbide single crystals is discussed. The evolution of the irradiation-induced defects as a function of the ion fluence has been studied as a function of depth below the surface using 0.5-25 keV positron beam based Doppler annihilation-ray broadening spectrometry. Results show the detection of two different kinds of defects, depending on the ion fluence.  相似文献   

17.
A new positron gun (PG) will enable high sensitivity measurements in applications of positron annihilation spectroscopy in Romania. Some data concerning the design of a modular system for focussing, transport and acceleration of mono-energetic positrons in the range 0.8-50 keV have been obtained and experimenting on moderators and CDBS was performed. We present a short overview of the present status of the project and preliminary results from Coincidence Doppler Broadening Spectroscopy with a 22NaCl source, on Al samples. The entire positron gun system will be designed as a high-vacuum dedicated extension operating with two options: a 50 mCi 22NaCl source and in-line with the NIPNE cyclotron or a new intense compact cyclotron.  相似文献   

18.
We present a new method to reconstruct the surface profile of a sample from coherent reflectivity data of a white x-ray beam experiment. As an example the surface profile of a laterally confined silicon wafer has been reconstructed quantitatively from static speckle measurements using white coherent x-rays from a bending magnet in the energy range between 5 < E < 20 keV. As a consequence of using white radiation, speckles appear in addition to the Airy pattern caused by scattering at the entrance pinhole. Nevertheless, the surface profile of a triangularly shaped specimen was reconstructed considering sufficient oversampling between the beam-footprint and the effective sample width. For the profile reconstruction the Error-Reduction phase retrieval algorithm was modified by including the spectral illumination function and a Fresnel propagator term. The simultaneous use of different x-ray energies having different penetration depth provides information on the evolution of the surface profile from the near-surface towards the bulk. The limitations of present experiment can be overcome using white or pink radiation from a source with higher photon flux.  相似文献   

19.
Four different Fe-Cr binary alloys with Cr content 2.5-11 wt% were studied in details using various methods. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) were applied to obtain basic information, required for standard positron annihilation lifetime spectroscopy (PALS) spectra analysis. Additionally, PALS measurements were performed on as-received state as well as on helium implanted specimens. The He implantation was proposed for simulation of radiation damage and obtain high doses even in near surface areas (up to 1 μm). The implantation was based on the SRIM code simulation and next DPA calculations. Final concentration of vacancy type defects were calculated for 250 keV He2+ beam and the maximum was determined in 600 μm depth. Such specimens are very suitable for positron beam study of vacancy type defect mobility as a result of thermal treatment, which will be performed simultaneously in the future.  相似文献   

20.
In this experiment, nitrogen ions were implanted into CZ-silicon wafer at 100 keV at room temperature with the fluence of 5 × 1015 N2+/cm2, followed by rapid thermal processing (RTP) at different temperatures. The single detector Doppler broadening and coincidence Doppler broadening measurements on slow positron beam were carried out to characterize the defects in the as-implanted silicon and RTP-treated samples. It is found that both nitrogen-vacancy complexes (N-Vsi) and oxygen-vacancy complexes (O-Vsi) produced by nitrogen implantation diffuse back to the sample surface upon annealing. But the N-Vsi and the O-Vsi complete with each other and give a summed effect on positron annihilation characteristics. It is shown that the N-Vsi win out the O-Vsi in as-implanted sample and by RTP at 650 °C, 750 °C, which make the S-parameter increase; O-Vsi plays a dominant role after annealing above 850 °C, which makes the S parameter decrease.  相似文献   

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