Secondary ion mass spectrometry for quantitative surface and in-depth analysis of materials

Secondary ion mass spectrometry (SIMS) is a technique based on the sputtering of material surfaces under primary ion bombardment. A fraction of the sputtered ions which largely originate from the top one or two atomic layers of the solid is extracted and passed into a mass spectrometer where they are separated according to their mass-to-charge ratios and subsequently detected. Because the sputter-yields of the individual species, coupled with their ionization probabilities, can be quite high and the mass spectrometers can be built with high efficiencies, the SIMS technique can provide an extremely high degree of surface sensitivity. Using a particular mode like static SIMS where a primary ion current is as low as 10^?11 amp, the erosion rate of the surface can be kept as low as 1 Å per hour and one can obtain the chemical information of the uppermost atomic layer of the target. The other mode like dynamic SIMS where the primary ion current is much higher can be employed for depth profiling of any chemical species within the target matrix, providing a very sensitive tool (～ 1 ppm down to ppb) for quantitative characterization of surfaces, thin films, superlattices, etc. The presence of molecular ions amongst the sputtered species makes this method particularly valuable in the study of molecular surfaces and molecular adsorbates. The range of peak-intensities in a typical SIMS spectrum spans about seven to eight orders of magnitude, showing its enormously high dynamic range; an advantage in addition to high sensitivity and high depth-resolution. Furthermore, the high sensitivity of SIMS to a very small amount of material implies that this technique is adaptable to microscopy, offering its imaging possibilities. By using this possibility in static SIMS or dynamic SIMS mode of analysis, one can obtain a two-dimensional (2D) surface mapping or a three-dimensional (3D) reconstruction of the elemental distribution, respectively within the target matrix. Secondary ion yields for elements can differ from matrix to matrix. These sensitivity variations pose serious limitations in quantifying SIMS data. Various methods like calibration curve approach, implantation standard method, use of relative sensitivity factor, etc. are presently employed for making quantitative SIMS analysis. The formation of secondary ions by ion bombardment of solids is relatively a complex process and theoretical research in this direction continues in understanding this process in general. The present paper briefly reviews the perspective of this subject in the field of materials analysis.     

Microscopic observation of oxygen reaction pathway on high temperature electrode materials

Attempts have been made to develop experimental techniques for obtaining microscopic information on high temperature electrodes under current flow. Several techniques are proposed to investigate the geometrical distribution of the series and parallel processes inside the electrode layer. Based on the local equilibrium concept, the contribution of the series processes were studied by probing the local oxygen potential. A microprobe oxygen sensor was developed to measure the oxygen potential profile on a model electrode of (La,Sr)MnO₃ on YSZ. Use of alternative methods that detect the valence state of the cations in the electrode material were also proposed. As an ex-situ technique, active sites for gas–solid oxygen exchange reaction were investigated by using isotope exchange and SIMS (secondary ion mass spectrometry) analysis. The three-dimensional distribution of the isotope ratio was obtained by SIMS with imaging capability. A non-uniform distribution of the reaction rate on the electrode surface was visualized for the electrode material with and without current flow. By the imaging technique, an extraordinary fast oxygen exchange site was found on (La,Sr)₂CoO₄/(La,Sr)CoO₃ boundaries.     

SIMS investigations of hydrogen interaction with a zirconium getter alloy surface

The results from secondary ion mass spectrometry (SIMS) investigations of the surface of Zr₅₀V₅₀ intermetallic getter alloy under residual and elevated partial pressures of hydrogen at different temperatures are reported.     

A new approach for preventing charging up of soft material samples by coating with conducting polymers in SIMS analysis

Dynamic secondary ion mass spectroscopy (SIMS) analysis of soft materials such as polymer or biomaterial is one of challenging subjects due to the charge up effect brought from the irradiation of a primary ion beam, hampering the collection of secondary ions. Conventional methods against the charging up are the electron beam irradiation for charge compensation and surface coating with metal, normally gold. Those methods require a compromise analytical condition, reducing the primary ion beam current to suppress the range of the charging, which degrading the performances of the SIMS analyses. We have proposed that a thicker conductive layer, capable of delocalizing the charge onto the surface, should be put on a soft insulator sample to avoid charging up. The depth profile of the hair sample coated wholly with a polythiophen-based conducting polymer was successfully measured in longer time without any charging up even in the maximum current of the oxygen primary ion beam (O₂⁺: 7.5 keV, 400 nA) or using an electron beam compensation system. Thus, the proposed method coating with a conductive organic polymer against the charging issue would be expected as a breakthrough on SIMS analysis.     

Pulsed laser deposition of ZnO in N2O atmosphere

The contribution deals with ZnO thin layers doped by nitrogen which were prepared by pulsed laser deposition in N₂O ambient atmosphere. Our approach is based on ablation of undoped ZnO target in active atmosphere containing N₂O gas without any supporting excitation equipment in parallel. Ablation of ZnO target was performed at different pressures (1–32 Pa) of N₂O ambient atmosphere by pulsed Nd:YAG laser (at 355 nm). Layers of ZnO were grown on different substrates (Si, sapphire, fused silica) and their properties were investigated by various analytical methods: scanning electron microscopy (SEM), secondary ion mass spectroscopy (SIMS), X-ray diffraction (XRD), and optical transmission spectroscopy. The results confirmed incorporation of nitrogen into ZnO layers and its concentration was pressure dependent. According to SIMS analysis, there is a certain pressure level (above 10 Pa) when the presence of N becomes negligible. Transmittance spectra showed increasing of the optical band gap (E _g) according to the pressure of N₂O.     

Molecular SIMS – A journey from single crystal to biological surface studies

The development of Static or Molecular secondary ion mass spectrometry (SIMS) is reviewed with particular reference to the journey made by the Manchester group and its collaborators. The earliest studies focussed on the application of static SIMS to single crystal surface studies. These studies successfully demonstrated that static SIMS delivered information on the delicate adsorbate state that mirrored that obtained by other surface science techniques. Subsequent application of the technique to studying the state and reactivity of bimetallic surfaces stimulated by collaboration with the Ertl group, demonstrated that static SIMS could be applied to the investigation of quite complex surface chemistry. This success stimulated the application of the technique to surface chemistry studies of much more complex systems such as polymers, ice mimics of polar stratospheric clouds, aerosols, culminating in biological systems. The need to enhance ion yields of the larger biological molecules led to the development and introduction of polyatomic primary ion beams, most notably based on C₆₀ buckminsterfullerene. This type of ion beam has transformed molecular analysis by SIMS. Not only have the yields of larger molecular ions been greatly increased, the bombardment induced damage that necessitated the static limit has been dramatically reduced such that for many materials the static limit requirement can be abandoned. A completely new analytical regime has opened up so that molecular depth profiling and 3D chemical imaging is possible. To fully realise the new capabilities for biological analysis a new generation of ToF-SIMS instrument is being developed that overcomes the compromises of pulsed beam instruments and that enables high mass resolution, high spatial resolution and high duty cycle to be attained simultaneously.     

Surface analysis with low energy ion scattering

Principles and applications of low energy ion scattering for surface analysis are presented. Basic features are the binary collision concept, the scattering cross-sections and the ion neutralization process. The potential and the limitations of the method are outlined. Some pertinent experimental aspects are considered. In a number of examples the performance of the technique is demonstrated for qualitative and quantitative composition analysis and for studies of surface structures. Finally a few comparisons are made with other techniques, such as AES, LEED, or SIMS.     

Introduction of ice protective film for 3D microscale analysis of biological sample

It is urgently necessary for secondary ion mass spectrometry (SIMS) analysis to overcome influence on the compositional distribution of the sample in vacuum chamber. In this study, we investigated the handling of the ice protective film in techniques such as the gallium focused ion beam (Ga FIB) etching. Here we demonstrate the technique with frozen Hymenochirus boettgeri red blood cell. The red blood cells covered with an ice protective film were cross-sectioned by using Ga FIB, and the two-dimensional SIMS mapping over the cross-section was carried out. The distributions of Na and K were observed on the cross-section and surface of red blood cell with ice protective film. This result agrees qualitatively with physiological intracellular and extracellular concentrations of vital cells. The technique used for SIMS was proved to be a reliable method, preserving the cells in their living state.     

SrBi2Ta2O9 ferroelectric thin film capacitors: degradation in a hydrogen ambient

The effects of annealing in forming gas 5% hydrogen, 95% nitrogen; FGA) are studied on spin-coated SrBi₂Ta₂O₉ (SBT) thin films. SBT films on a platinum bottom electrode are characterized with and without a platinum top electrode. Films are characterized by residual stress measurements, scanning electron microscopy (SEM), Auger electron spectroscopy (AES), high-temperature X-ray diffraction (HT-XRD) and secondary ion mass spectrometry (SIMS). To determine the degree of strain, lattice constants of Pt are measured by X-ray diffraction (XRD). HT-XRD of blanket SBT/Pt/Ti films in forming gas revealed that the bismuth-layered perovskite structure of SBT is stable up to approximately 500 °C. After formation of an intermediate phase between 550 °C and 700 °C, SBT changes its structure to an amorphous phase. SIMS analysis of Pt/SBT/Pt samples annealed in deuterated forming gas (5% D₂, 95% N₂) showed that hydrogen accumulates in the SBT layer and at the platinum interfaces next to the SBT. After FGA of blanket SBT films, tall platinum–bismuth whiskers are seen on the SBT surface. It is confirmed that these whiskers originate from the platinum bottom electrode and grow through the SBT layer. FGA of the entire Pt/SBT/Pt/Ti stack shows two different results. For the samples with a high-temperature annealing (HTA) step in oxygen after top electrode patterning, peeling of the top electrode is observed after FGA. For the samples without a HTA step, no peeling is observed after FGA. The residual stress at room temperature is measured for blanket platinum wafers deposited at different temperatures. It is found that an increase in tensile stress caused by the HTA step in oxygen is followed by a decrease in stress caused by the hydrogen in the forming gas. Without HTA, however, an increase of stress is observed after FGA. PACS 77.84.-s; 81.40.-z; 77.55.+f     

Formation of precipitates in heavily boron doped 4H-SiC

Secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) are utilized to study precipitation and the solubility of B in 4H-SiC epitaxial layers super saturated with B. Heat treatments are performed in Ar atmosphere in an rf-heated furnace at temperatures between 1700 and 2000 °C. SIMS ion images, and TEM micrographs reveal the formation of two types of precipitates where the larger, more thermally stable one is suggested to be B₄C. The boron solubility is determined from SIMS depth profiles and is shown to follow the Arrhenius expression: 7.1 × 10²² exp(−1.4 eV/k_BT) cm⁻³ over the studied temperature range.     

3D molecular imaging SIMS

Thin monolayer and bilayer films of spin cast poly(methyl methacrylate) (PMMA), poly(2-hydroxyethyl methacrylate) (PHEMA), poly(lactic) acid (PLA) and PLA doped with several pharmaceuticals have been analyzed by dynamic SIMS using SF₅⁺ polyatomic primary ion bombardment. Each of these systems exhibited minimal primary beam-induced degradation under cluster ion bombardment allowing molecular depth profiles to be obtained through the film. By combing secondary ion imaging with depth profiling, three-dimensional molecular image depth profiles have been obtained from these systems. In another approach, bevel cross-sections are cut in the samples with the SF₅⁺ primary ion beam to produce a laterally magnified cross-section of the sample that does not contain the beam-induced damage that would be induced by conventional focussed ion beam (FIB) cross-sectioning. The bevel surface can then be examined using cluster SIMS imaging or other appropriate microanalysis technique.     

Quantitative fundamental SIMS studies using O implant standards

The use of dilute ‘minor-isotope’ ¹⁸O implant reference standards for quantification of surface oxygen levels during steady-state SIMS depth profiling is demonstrated. Some results of two types of quantitative fundamental SIMS studies with oxygen (¹⁶O) primary ion bombardment and/or oxygen flooding (O₂ gas with natural isotopic abundance) are presented: (1) Determination of elemental useful ion yields, UY(X^±), and sample sputter yields, Y, as a function of the oxygen fraction c_O measured in the total flux emitted from the sputtered surface. Examples include new results for positive secondary ion emission of several elements (X = B, C, O, Al, Si, Cu, Ga, Ge, Cs) from variably oxidized SiC or Ge surfaces. (2) The dependence of exponential decay lengths λ(Au^±) in sputter depth profiles of gold overlayers on silicon on the amount of oxygen present at the sputtered silicon surface. The latter study elucidates the (element-specific) effects of oxygen-induced surface segregation artifacts for sputter depth profiling through metal overlayers into silicon substrates.     

Materials and reaction mechanisms at anode/electrolyte interfaces for SOFCs

The present paper reviews anodic reaction mechanisms of porous cermet and model anodes at metal/oxide interfaces in solid oxide fuel cells (SOFCs). Some analytical results, electrochemical methods, and reaction models were presented at Ni–YSZ cermets and well defined model anodes. Isotope labeling/secondary ion mass spectrometry (SIMS) analysis techniques were applied to determine the oxygen surface reactivity of oxide electrolytes in reducing atmospheres. The technique was also applied to determine the catalytic activity of metal/oxide interfaces for CH₄ decomposition and reactivity with the reformed gases at the mesh or stripe shaped anodes on different oxides. Observed SIMS images and the electrochemical analyses were compared at the model anode/electrolyte interfaces.     

Temperature and N energy dependence on nano-structural modifications and characteristics of Mo surface

The surface modifications of Mo massive samples (0.5 mm foils) made by nitrogen ion implantation are studied by SEM, XRD, AFM, and SIMS. Nitrogen ions in the energy range of 16-30 keV with a fluence of 1 × 10¹⁸ N⁺ cm⁻² were implanted in molybdenum samples for 1600 s at different temperatures. XRD patterns clearly showed MoN (0 3 1) (hcp) very close to Mo (2 0 0) line. Crystallite sizes (coherently diffracting domains) obtained from MoN (0 3 1) line, showed an increase with substrate temperature. AFM images showed the formation of grains on Mo samples, which grew in size with temperature. Similar morphological changes to that has been observed for thin films by increasing substrate temperature (i.e., structure zone model (SZM)), is obtained. The density of implanted nitrogen ions and the depth of nitrogen ion implantation in Mo studied by SIMS showed a minimum for N⁺ density as well as a minimum for penetration depth of N⁺ ions in Mo at certain temperatures, which are both consistent with XRD results (i.e., I_{Mo (2 0 0)}/I_{Mo (2 1 1)}) for Mo (bcc). Hence, showing a correlation between XRD and SIMS results. This phenomenon is explained on the basis of residual gas, substrate temperature, dissociation of water in the chamber and the ion energy.     

Functionality of novel black silicon based nanostructured surfaces studied by TOF SIMS

A functionality of the novel black silicon based nanostructured surfaces (BS 2) with different metal surface modifications was tested by time-of-flight secondary ion mass spectrometry (TOF SIMS). Mainly two surface functions were studied: analytical signal enhancement and analyte pre-ionization effect in SIMS due to nanostructure type and the assistance of the noble metal surface coating (Ag or Au) for secondary ion formation. As a testing analyte a Rhodamine 6G was applied. Bi⁺ has been used as SIMS primary ions. It was found out that SIMS signal enhancement of the analyte significantly depends on Ag layer thickness and measured ion mode (negative, positive). The best SIMS signal enhancement was obtained at BS2 surface coated with 400 nm of Ag layer. SIMS fragmentation schemes were developed for a model analyte deposited onto a silver and gold surface. Significant differences in pre-ionization effects can play an important role in the SIMS analysis due to identification and spectra interpretation.     

Thin film characterization by laser interferometry combined with SIMS

Thin film properties of technologically important materials (Si, GaAs, SiO₂, WSi_x) have been measured by using a novel technique that combines secondary ion mass spectrometry (SIMS) and laser interferometry.The simultaneous measurement of optical phase and reflectance as well as SIMS species during ion sputtering yielded optical constants, sputtering rates and composition of thin films with high depth resolution. A model based on the principle of multiple reflection within a multilayer structure, which considered also transformation of the film composition in depth and time during sputtering, was fitted to the reflectance and phase data. This model was applied to reveal the transformation of silicon by sputtering with O ₂ ⁺ ions. Special attention was paid to the preequilibrium phase of the sputter process (amorphization, oxidation, and volume expansion). To demonstrate the analytical potential of our method the multilayer system WSi_x/poly-Si/SiO₂/Si was investigated. The physical parameters and the stoichiometry of tungsten suicide were determined for annealed as well as deposited films. A highly sensitive technique that makes use of a Fabry-Perot etalon integrated with a Michelson type interferometer is proposed. This two-stage interferometer has the potential to profile a sample surface with subangstroem resolution.     

Annealing study of Sb and Al ion-implanted ZnO

In this work we have studied diffusion and electrical activation in Al⁺ and Sb⁺ implanted ZnO samples using secondary ion mass spectrometry (SIMS), scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). The samples were hydrothermally grown and post-implant annealing was performed at 800, 900 and 1000 C in pure oxygen atmosphere. After each annealing step the samples were characterized with SSRM/SCM and SIMS. The thermal treatments did not induce any significant impurity redistribution as measured by SIMS, while electrical compensation is observed by SSRM/SCM for the Sb-implanted sample yielding less n-doping than in the as-grown samples. In the Al-implanted samples, an increase in carrier concentration is observed; we ascribe this to Al-related donors and possibly interstitial lithium, a common residual impurity in the samples that have been shown to be very mobile by SIMS.     

An isotope effect in electrolytic hydrogen absorption of some transition metals studied by ERDA and SIMS techniques

The depth profiles of protium and deuterium which were charged electrolytically, were measured by elastic recoil detection analysis (ERDA) and secondary ion mass spectrometry (SIMS) techniques in order to study the isotope effect in hydrogen absorption of Ti, Zr, Nb, Ni and Pd. The absolute loading ratios of H(D)/metal were calculated from the ERDA spectra and the depth profiles of SIMS were compared with the results of the ERDA. The isotope absorption ratios are estimated to be (D/H)_Ti=0.43, (D/H)_Zr=0.53, (D/H)_Nb=0.17 and (D/H)_Pd=0.10. The content in Ni is below the detection limit. The mass balance equations based on the transport–absorption model, were applied to analysis of the experimental results. This model reveals that the isotope absorption ratios for the Nb and Pd cases are governed mainly by the flux of hydrogen ions flowing to the surface of the metal electrode. However, the competition between the absorption–conversion process and the recombination process mainly determine the isotope ratio for the Ti and Zr cases.     

Methoxylation of magnesium studied by direct recoil spectroscopy,SIMS and XPS: Calibration of relative surface hydrogen concentration

Chemisorption of methanol on polycrystalline magnesium is studied by time-of-flight analysis of directly recoiled (DR) surface atoms, angular resolved X-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS). The combined measurements show that decomposition occurs to form ～ 0.14 monolayers of surface hydroxide at methanol exposures < 4 L. High exposures result in molecular chemisorption to form a single methoxide overlayer. The DR results reveal that the C and H of the methyl group are the outermost atoms on the saturated surface. Analysis of DR intensities allows calibration of the relative signals and comparison with calculated recoil cross sections. The methoxide/Mg system provides a standard for surface hydrogen concentrations by the direct recoil technique.     

Depth profiling using C60 SIMS—Deposition and topography development during bombardment of silicon

A C₆₀⁺ primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C₆₀⁺ depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C₆₀⁺ SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C₆₀⁺ SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs⁺ SIMS depth profiling. This degradation is thought to result from the formation of an unusual platelet-like grain structure on the SIMS crater bottoms. Other unusual topographical features were also observed on silicon substrates after high primary ion dose C₆₀⁺ bombardment.