Analysis of optical bistability through rapid water desorption from hard coatings

The mechanism of optical bistability in TiO₂/SiO₂ nonlinear interference filters is investigated and found to be due to water sorption in the pores of the material.     

Simultaneous single-shot imaging of OH and O2 using a two-wavelength excimer laser

A technique is described for simultaneous single-shot imaging of OH and O₂. Laser-induced fluorescence of both molecules is excited by a tunable KrF laser, which is operated simultaneously on two wavelengths. By using two CCD detectors with image intensifiers and suitable filters, separate images of OH and O₂ distributions in H₂/O₂ and hydrocarbon/air flames were obtained.     

Spin-transfer switching in MgO magnetic tunnel junction nanostructures

Spin-transfer driven switching was observed in MgO based magnetic tunnelling junctions (MTJ) with tunnelling magnetoresistance ratio of up to 160% and the average intrinsic switching current density (J_c0) down to 2 MA/cm², which are the best known results reported in spin-transfer switched MTJ nanostructures. Based on a comparison of results both from MgO and AlO_x MTJs, further switching current decrease via MgO dual structures with two pinned layers is discussed.     

Resistance switching in Fe-doped P0.7Ca0.3MnO3 thin films

An enhanced electric-pulse-induced resistance (EPIR) switching effect is observed in the Ag/P_0.7Ca_0.3Mn_1 − xFe_xO₃/YBa₂Cu₃O₇ (Ag/PCMFO/YBCO) and Ag/(PCMFO/PCMO)/YBCO structures. Unlike in the PCMO-based EPIR devices, where the Ag/PCMO interface plays a crucial role, both the Ag/PCMFO interface and the bulk PCMFO are found to have significant contributions to the EPIR switching of the PCMFO-based device. A possible explanation is to extend the pulse-driven oxygen ion/vacancy motion model at the metal/PCMO interface region to the bulk PCMFO.     

Excitation power controlled luminescence switching in Yb-Tm co-doped hexagonal NaYF4 nanorods

Intense infrared-to-visible up-conversion (UC) emissions were obtained in hexagonal Yb³⁺-Tm³⁺ co-doped NaYF₄ nanorods under excitation at 980 nm. Especially, luminescent switching between different UC emission wavelengths at 800, 480 and 450 nm were observed by adjusting excitation powers. Based on power-dependent spectral analyses, it was found that the cooperative energy transfer between Yb³⁺-Yb³⁺ pairs and Tm³⁺ ions play a key role on the luminescent switching besides the saturation effect of Yb³⁺²F_5/2 and Tm³⁺¹G₄ excited states. Our results indicate that hexagonal NaYF₄ nanostructures have potential applications in miniaturized solid-state laser, optical processing sensors and fluorescent biolabels.     

Electrical switching studies on As<Subscript>40</Subscript>Te<Subscript>60-x</Subscript>Se<Subscript>x</Subscript> and As<Subscript>35</Subscript>Te<Subscript>65-x</Subscript>Se<Subscript>x</Subscript> glasses

The I–V characteristics of bulk As₄₀Te_60-xSe_x and As₃₅Te_65-xSe_x glasses have been studied with a current sweep of 0–18 mA-0, over a wide range of compositions (4≤x≤22). All the glasses studied showed a threshold electrical switching behaviour. The number of switching cycles withstood by the samples has been found to depend on the ON-state current. It is seen that the switching voltages increase with increase in selenium content. Further, the switching voltages are found to be almost independent of the thickness of the sample (d), in the range 0.18–0.3 mm. Also, the switching voltages and the number of switching cycles withstood by the samples are found to decrease with temperature. Received: 6 November 2002 / Accepted: 8 November 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. Fax: +91-80/360-0135, E-mail: sasokan@isu.iisc.ernet.in     

Analysis of ferroelectric switching in sodium nitrite:poly(vinyl alcohol) nanocomposite films

The Fourier transform infrared (FTIR) spectra and switching current response in sodium nitrite:poly(vinyl alcohol) nanocomposite films have been studied as a function of composition of NaNO₂. The switching current data fitted well to infinite-grain model (IGM) in the region t<t _s and to finite-grain model (FGM) in the region t≥t _s . The microscopic parameters like the dimensionality, the domain wall velocity, and the nucleation rate have been evaluated which provide more physical insight of the switching phenomena in the composite films. The polarization current and nucleation rate are optimum in 50 wt.% composite film and have been discussed in terms of grain size and strain variations with the composition. The effect of applied field and pulse width variation on the switching behavior of 50 wt.% composition has also been studied. The exponential field dependence of the domain wall velocity and the nucleation rate indicate that nucleation mechanism is responsible for switching phenomena in the composite films. The writing pulse width affects significantly on the switching behavior of the composite films.     

High-capacity and security packet switching using the nonlinear effects in micro ring resonators

We propose a new design of secured packet switching generated by using nonlinear behaviors of light in a micro ring resonator. The use of chaotic signals generated by the micro ring resonator to form the filtering and packet switching characteristics is described, where the high-capacity and security switching using such form is presented. The key advantage is that the high capacity of communication data can be secured in the transmission link, where the nonlinear penalty of light traveling in the device is beneficial. For instance, the required information can be transmitted and retrieved by using the proposed packet switching scheme. In principle, the chaotic signals are generated by a Kerr effects nonlinear type of light in a micro ring resonator, where the control input power can be specified by the required output filtering signals. The ring radii used range between 10 and 20 μm, κ=0.0225, α=0.5 dB and n₂=2.2×10⁻¹⁵ m²/W. Simulation results obtained have been described based on the practical device parameters. Three forms of the applications have been simulated, the potential of using for the tunable band pass and band stop filters, in which high-capacity packet switching data can be performed, and the fs switching time is plausible.     

Influence of 90° domain switching on the physical properties of tetragonal barium titanate single crystals

In this paper, we report the influence of 90° domain switching on the physical properties of tetragonal BaTiO₃ single crystals. It is found that the contribution of 90° domain switching to the piezoelectric response is much larger in magnitude than the contribution of the direct piezoelectric effect under large external mechanical stress. Simultaneously, the interconversion of a and c crystallographic axes and the large actuation strain as high as 1% is induced by 90° domain switching in the tetragonal BaTiO₃ single crystal.     

Ferroelectric properties of highly c-axis oriented Bi4−xLaxTi3O12 film-based capacitors

Highly c-axis oriented lanthanum-modified bismuth titanate (Bi_4−xLa_xTi₃O₁₂) films having a variety of lanthanum (La) contents were grown on Pt/TiO₂/SiO₂/Si(100) substrates using metal-organic sol deposition and subsequent annealing at 650 °C for 1 h. After systematically examining the ferroelectric properties of Bi_4−xLa_xTi₃O₁₂ films as a function of the La-content, it was concluded that the film with x=0.85 had the largest remanent polarization in the direction parallel to the c-axis. The Pt/Bi_3.15La_0.85Ti₃O₁₂/Pt capacitor showed a well-saturated polarization-electric field (P-E) switching curve with the switching remanent polarization (2P_r) value of 33 μC/cm² and the coercive field (E_c) of 68 kV/cm at an applied voltage of 10 V. More importantly, the capacitor exhibited fatigue-free behavior up to 6.5×10¹⁰ read/write switching cycles at a frequency of 1 MHz. The capacitor also demonstrated an excellent charge-retaining ability and a strong resistance against the imprinting failure.     

Threshold electrical switching in As45Te55-xInx and As50Te50-xInx glasses

The electrical switching behaviour of As₄₅Te_55-xIn_x (5≤x≤15) and As₅₀Te_50-xIn_x (2.5≤x≤11.5) has been studied over a wide range of compositions. These glasses are found to exhibit threshold switching. The composition dependence of switching voltage (V_t) has been found to exhibit a change in slope and a local minimum at compositions x=10 and 12.5 for As₄₅Te_55-xIn_x and x=7.5 and 10.8 for As₅₀Te_50-xIn_x, respectively. The slope change in V_t verses x and the local minimum have been identified using two network topological effects, namely the rigidity percolation threshold and the chemical threshold. Received: 23 August 2001 / Accepted: 27 August 2001 / Published online: 11 February 2002     

Photosensitive post tuning of chalcogenide Te20As30Se50 narrow bandpass filters

We present an experimental study on the photosensitive properties of narrow bandpass filters based on a chalcogenide Te₂₀As₃₀Se₅₀ (TAS) spacer. The transmittance curve of single TAS layer was shifted towards long wavelength direction after 2 h exposure by Xenon arc lamp. The refractive index and extinction coefficient were both increased together with a red shift of optical gap. A maximum 1.7% photo-induced effect was observed. Narrow band filters constituted by TAS and cryolite were manufactured by electron beam deposition. The transmittance spectrum of the filter during the exposure by a wide band source was in situ measured and the resonant wavelength was observed to turn longer gradually till saturation. A spatially localized central wavelength change up to 5.7 nm was finally obtained. The stability of the photo-induced effect was studied and some comments were given at the end of this paper.     

Piezoresponse force microscopy and magnetic force microscopy characterization of γ-Fe2O3-BiFeO3 nanocomposite/Bi3.25La0.75Ti3O12 multiferroic bilayers

The multiferroic behavior of epitaxial γ-Fe₂O₃-BiFeO₃ (composite)/Bi_3.25La_0.75Ti₃O₁₂ bi-layered heterostructures grown on SrRuO₃/SrTiO₃ (1 1 1) substrates has been studied using piezoresponse force microscopy, magnetic force microscopy and magnetometry. The ferroelectric domain structure is ascribed to the BiFeO₃ phase while the magnetism originates in the γ-Fe₂O₃ phase of the composite layer. Our studies demonstrate the presence and switching of magnetic and ferroelectric domains within the same area of the sample. This confirms the presence of multiferroic behavior at the nanoscale in our γ-Fe₂O₃-BiFeO₃ nanocomposite thin films.     

Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) comprising amorphous Co_70.5Fe_4.5Si₁₅B₁₀, possessing low saturation magnetization of 560 emu/cm³, as a free layer have been investigated. The switching behaviours were confirmed for the micrometer-sized elements experimentally, using the scanning magneto-optical Kerr effect (scanning MOKE). A micromagnetic modelling study was also carried out for the submicrometer-sized elements. By using either a CoFeSiB single or a synthetic antiferromagnetic free-layer structure, the magnetization switching field became much lower than conventionally used CoFe free layered MTJs.     

Magnetoelectricity in multiferroically composed multilayers and multiglasses

Single-crystalline magnetoelectric (ME) antiferromagnetic Cr₂O₃ exchange coupled to a ferromagnetic multilayer (Pt/Co/Pt)_n, n?1, represents a multiphase multiferroic material with sophisticated multifunctional properties. They comprise the possibility of switching the exchange bias (EB) of the ferromagnetic hysteresis loop via the linear ME effect of Cr₂O₃, and to design MERAM and logic cells operating at room temperature. Quadratic and cubic ME effects - promoted by soft-mode quantum fluctuations - are observed at lowest order in ceramic Sr_0.98Mn_0.02TiO₃ at low temperatures. Dipolar and spin glass orders occur simultaneously on the Mn²⁺ subsystem and form a multiglass by analogy with conventional multiferroics.     

Preparation and characterization of ferroelectric SrBi2Ta2O9 thin films on Si using Al2O3 buffer layers

SrBi₂Ta₂O₉ (SBT) thin films were prepared on p-type Si(100) substrates with Al₂O₃ buffer layers. Both the SBT films and the Al₂O₃ buffer layers were deposited by a pulsed laser deposition technique using a KrF excimer laser. An Al prelayer was used to prevent Si surface oxidization in the initial growth stage. It is shown that Al₂O₃ buffer layers effectively prevented interdiffusion between SBT and Si substrates. Furthermore, the capacitance–voltage (C-V) characteristics of the SBT/Al₂O₃/Si heterostructures show a hysteresis loop with a clockwise trace, demonstrating the ferroelectric switching properties of SBT films and showing a memory window of 1.6 V at 1 MHz. Received: 17 July 2000 / Accepted: 16 August 2000 / Published online: 30 November 2000     

Piezoresponse imaging and local characterization of ferroelectric domains in Pb(Zn1/3Nb2/3)O3–7%PbTiO3 single crystals

Ferroelectric domain structures of (001)‐oriented Pb(Zn_1/3Nb_2/3)O₃–7%PbTiO₃ (PZN‐7%PT) single crystals were visualized and characterized by piezoresponse force microscopy (PFM). Locally regular domain configurations are found to be possibly related to the stable macroscopic properties in the PZN‐7%PT single crystals. Nanoscale piezoresponse hysteresis loops measured by PFM tip revealed no evidence of local domain switching behavior in the PZN‐7%PT single crystal. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electric-field enhancement of beam coupling in Sn2P2S6

The influence of an external field on photorefractive recording in Sn₂P₂S₆ (SPS) crystals is studied. A large gain factor of more then 15 cm^-1 is achieved for a grating spacing of 12 μm at λ=0.9 μm. For an applied field exceeding ±200 V/cm a switching of the beam coupling direction is detected, exhibiting a pronounced hysteresis. Received: 25 October 2000 / Revised version: 18 January 2001 / Published online: 21 March 2001     

Crystallographic and luminescent characterizations of blue-emitting BaAl2S4 : Eu electroluminescent thin films

We characterized the crystallization and luminescence of blue-emitting BaAl₂S₄ : Eu electroluminescent thin films, prepared using switching electron-beam evaporation with two targets. From the photoluminescence intensity and decay profile of the activated Eu²⁺ ions in the BaAl₂S₄ : Eu, we found that the optimum annealing conditions for preparing highly luminescent thin films are a temperature of around 900°C and an annealing time of 2 min. We analyzed the crystalline properties using cross-sectional transmission electron microscope images. Evaluation of the cathodoluminescence spectra in the cross-sections showed that the BaAl₂S₄ : Eu emitting layer was luminously inhomogeneous on the depth of the layer and that the main luminescent area was near the surface of the emitting layer. We discuss here the relationship between the crystalline and luminescent properties.     

Switching phenomenon and optical properties of Se85Te10Bi5 films

Se₈₅Te₁₀Bi₅ films of different thicknesses ranging from 126 to 512 nm have been prepared. Energy-dispersive X-ray (EDX) spectroscopy technique showed that films are nearly stoichiometric. X-ray diffraction (XRD) measurements have showed that the Se₈₅Te₁₀Bi₅ films were amorphous. Electrical conduction activation energy (ΔE_σ) for the obtained films is found to be 0.662 eV independent of thickness in the investigated range. Investigation of the current voltage (I-V) characteristics in amorphous Se₈₅Te₁₀Bi₅ films reveals that it is typical for a memory switch. The switching voltage V_th increases with the increase of the thickness and decreases exponentially with temperature in the range from 298 to 383 K. The switching voltage activation energy (ε) calculated from the temperature dependence of V_th is found to be 0.325 eV. The switching phenomenon in amorphous Se₈₅Te₁₀Bi₅ films is explained according to an electrothermal model for the switching process. The optical constants, the refractive index (n) and the absorption index (k) have been determined from transmittance (T) and reflectance (R) of Se₈₅Te₁₀Bi₅ films. Allowed non-direct transitions with an optical energy gap (E_g^opt) of 1.33 eV have been obtained. ΔE_σ is almost half the obtained value of E_g^opt, which suggested band to band conduction as indicated by Davis and Mott.