Thermo and photoluminescence properties of Eu activated hexagonal, monoclinic and cubic gadolinium oxide nanorods

Different phases of Eu³⁺ activated gadolinium oxide (Gd (OH)₃, GdOOH and Gd₂O₃) nanorods have been prepared by the hydrothermal method with and without cityl trimethyl ammonium bromide (CTAB) surfactant. Cubic Gd₂O₃:Eu (8 mol%) red phosphor has been prepared by the dehydration of corresponding hydroxide Gd(OH)₃:Eu after calcinations at 350 and 600 °C for 3 h, respectively. When Eu³⁺ ions were introduced into Gd(OH)₃, lattice sites which replace the original Gd³⁺ ions, a strong red emission centered at 613 nm has been observed upon UV illumination, due to the intrinsic Eu³⁺ transition between ⁵D₀ and ⁷F configurations. Thermoluminescence glow curves of Gd (OH)₃: Eu and Gd₂O₃:Eu phosphors have been recorded by irradiating with gamma source (⁶⁰CO) in the dose range 10-60 Gy at a heating rate of 6.7 °C sec⁻¹. Well resolved glow peaks in the range 42-45, 67-76, 95-103 and 102-125 °C were observed. When γ-irradiation dose increased to 40 Gy, the glow peaks were reduced and with increase in γ-dose (50 and 60 Gy) results the shift in first two glow peak temperatures at about 20 °C and a new shouldered peak at 86 °C was observed. It is observed that there is a shift in glow peak temperatures and variation in intensity, which is mainly attributed to different phases of gadolinium oxide. The trapping parameters namely activation energy (E), order of kinetics (b) and frequency factor were calculated using peak shape and the results are discussed.     

Nanoparticles of BaSO4:Eu for heavy-dose measurements

Nanoparticles of BaSO₄:Eu with grain size in the range 30-50 nm have been prepared by the chemical co-precipitation method and characterized by UV-visible spectrometry and X-ray diffraction (XRD). Shape and size of the prepared nanomaterials were observed by a scanning electron microscope (SEM). The optical energy band gaps of the micro- and nanocrystalline BaSO₄:Eu were determined and are found to be 3.39±0.0136 and 3.48±0.0139 eV, respectively. The thermoluminescence (TL) glow curve of BaSO₄:Eu nanoparticles has been studied and compared with that of the corresponding microcrystalline powder. It has been observed that the TL glow peak at 497 K, seen prominently in the microcrystalline sample, appeared as a small peak in nanocrystalline powder, while that observed as a shoulder in the former at 462 K dominates in the latter. The observed TL sensitivity of the prepared nanocrystalline powder is less than that of the microcrystalline sample at low doses, while it is more at higher doses. This nanophosphor exhibits a linear/sublinear TL response to γ-radiation over a very wide range of exposures (0.1 Gy to 7 KGy), which is much wider compared to that of the microcrystalline counterpart (0.1-10 Gy). This response over a large span of exposures makes the nanostructure form of BaSO₄:Eu useful for its application to estimate low as well as high exposures of γ-rays.     

Argon ions induced thermoluminescence properties of Ba0.12Sr0.88SO4 phosphor

Thermoluminescence properties of barium strontium mixed sulfate have been studied by irradiation with Argon ions. The sample was recrystallized by chemical co-precipitation techniques using H₂SO₄. The X-ray diffraction study of prepared sample suggests the orthorhombic structure with average grain size of 60 nm. The samples were irradiated with 1.2 MeV Argon ions at fluences varying between 10¹¹ and 10¹⁵ ions/cm². The argon ions penetrate to the depth of 1.89 μm and lose their energy mainly via electronic stopping. Due to ion irradiation, a large number of defects in the sample are formed. Thermally stimulated luminescence (TSL) glow curves of ion irradiated Ba_0.12Sr_0.88SO₄ phosphor exhibit broad peak with maximum intensity at 495 K composed of four overlapping peaks. This indicates that different sets of traps are being activated within the particular temperature range each with its own value of activation energy (E) and frequency factor (s). Thermoluminescence (TL) glow curves were recorded for each of the ion fluences. A linear increase in intensity of TL glow peaks was found with the increase in ion dose from 59 kGy to 5.9 MGy. The kinetic parameters associated with the prominent glow peaks were calculated using glow curve deconvolution (GCD), different glow curve shape and sample heating rate methods.     

Excitation of thermoluminescence in Eu doped Ba0.12Sr0.88SO4 nanophosphor by low energy argon ions

In the present paper thermoluminescence properties of argon ions irradiated barium strontium mixed sulphate phosphor are reported. The Ba_0.12Sr_0.88SO₄ phosphor was prepared by chemical co-precipitation method. The X-ray diffraction study of prepared sample suggests orthorhombic structure with average grain size of 37 nm. The samples were irradiated with 1.2 MeV Argon ions at fluences varying between 10¹¹-10¹⁵ ions/cm². The argon ions penetrate to the depth of 1.89 μm and lose their energy mainly via electronic stopping. Due to ion irradiation, a large number of defects in the sample are formed. Thermoluminescence (TL) glow curves were recorded for each of the ion fluence. These curves exhibit one broad peak with maximum intensity at 498 K composed of three overlapping peaks. This indicates that different sets of traps are being activated within the particular temperature range each with its own value of activation energy (E) and frequency factor (s). The peaks were observed due to formation of trap levels by ion irradiation and subsequently activation of traps on thermal stimulation. The TL response of the nanophosphor is linear in the dose range 59 kGy-590 MGy. Kinetic parameters associated with the prominent peaks were calculated using glow curve deconvolution (GCD) and verified by different glow curve shape and sample heating rate methods.     

The Giant Dipole Resonance in the superdeformed143Eu nucleus

The γ-decay of the Giant Dipole Resonance (GDR) built on excited nuclear states has been measured for the nucleus¹⁴³Eu. The reaction¹¹⁰Pd(³⁷Cl, 4n)¹⁴³Eu at a beam energy of 165 MeV has been employed. This experiment aimed at searching the γ-decay of the GDR built on the superdeformed¹⁴³Eu states, populated at high spins. High-energy γ-rays were detected in 8 large BaF₂ scintillators in coincidence with discrete transitions measured with the NORDBALL array (in the configuration consisting of 17 HPGe detectors and a 2π multiplicity filter). The spectrum of high-energy γ-rays gated by low-energy transitions between states fed by the superdeformed states shows some excess of yield in the 7–10 MeV region with respect to that gated by transitions between states not populated by the superdeformed states. This excess should be due to the γ-decay of the the giant dipole oscillation along the superdeformed axis of the nucleus that is expected to have a frequency corresponding to ≈9–10 MeV (low-energy component of the GDR strength function). The measured excess, in spite of the large error bars, is found to be of the same order as predicted statistical model values.     

Luminescence investigations on sulfate apatite Na6(SO4)2FCl:RE (RE=Dy, Ce or Eu) phosphors

A new phosphor in the Cl-F system doped with Dy, Ce and Eu has been reported. Characterization of this phosphor using XRD, PL and TL techniques is described. Polycrystalline Na₆(SO₄)₂FCl:Dy; Na₆(SO₄)₂FCl:Ce and Na₆(SO₄)₂FCl:Eu phosphors prepared by a solid state diffusion method have been studied for their X-ray diffraction, photoluminescence (PL) and thermoluminescence (TL)characteristics. The PL excitation and emission spectra of phosphors were obtained. Dy³⁺ emission in the host at 475 and 570 nm is observed due to ⁴F_9/2→⁶H_15/2 and ⁴F_9/2→⁶H_13/2 transition, respectively, whereas the PL emission spectra of Na₆(SO₄)₂FCl:Ce phosphor shows the Ce³⁺ emission at 322 nm due to 5d→4f transition of Ce³⁺ ion. In Na₆(SO₄)₂FCl:Eu lattice, Eu²⁺ as well as Eu³⁺ emissions are observed. The emission of europium ion in this compound exhibits the blue as well as red emission. The TL glow curves of the same compounds have the simple structure with a prominent peak at 150, 175 and 200 °C. TL response, fading, reusability and trapping parameters of the phosphors are also studied. The TL glow curves of γ-irradiated Na₆(SO₄)₂FCl sample show one glow peak indicating that only one set of traps is being activated within the particular temperature range each with its own value of activation energy (E) and frequency factor (s). The trapping parameters associated with the prominent glow peak are calculated using Chen’s half width method. The release of hole/electron from defect centers at the characteristic trap site initiates the luminescence process in these materials. The intensity of the TL glow peaks increases with increase of the added γ-ray dose to the samples.     

Thermoluminescent properties of a Li2O-B2O3-Al2O3 glass system doped with CaF2 and Mn

A Li₂O-B₂O₃-Al₂O₃ glass system doped with CaF₂ and Mn was synthesized by fusion and its physical properties were investigated using thermoluminescence (TL) and differential thermal analysis (DTA) techniques. The TL glow curve peaks, resulting from this analysis, are characteristic of metastable levels intrinsic to CaF₂ crystals that have undergone γ-ray irradiation from a colbalt-60 (⁶⁰Co) source. This provides evidence of CaF₂ crystal formation in the glass system. Furthermore, the TL glow peak at about 480 K was stable at room temperature, sensitive to ⁶⁰Co γ-rays and showed good linearity with doses ranging from 3 Gy to approximately 100 Gy, and consequently could be used to quantify radiation doses. High quality synthesis of these crystals permits control of their thermoluminescent properties.     

Swift heavy ion induced modifications in cobalt doped ZnO thin films: Structural and optical studies

Modifications in the structural and optical properties of 100 MeV Ni⁷⁺ ions irradiated cobalt doped ZnO thin films (Zn_1−xCo_xO, x = 0.05) prepared by sol-gel route were studied. The films irradiated with a fluence of 1 × 10¹³ ions/cm² were single phase and show improved crystalline structure with preferred C-axis orientation as revealed from XRD analysis. Effects of irradiation on bond structure of thin films were studied by FTIR spectroscopy. The spectrum shows no change in bonding structure of Zn-O after irradiation. Improved quality of films is further supported by FTIR studies. Optical properties of the pristine and irradiated samples have been determined by using UV-vis spectroscopic technique. Optical absorption spectra show an appreciable red shift in the band gap of irradiated Zn_1−xCo_xO thin film due to sp-d interaction between Co²⁺ ions and ZnO band electrons. Transmission spectra show absorption band edges at 1.8 eV, 2.05 eV and 2.18 eV corresponding to d-d transition of Co²⁺ ions in tetrahedral field of ZnO. The AFM study shows a slight increase in grain size and surface roughness of the thin films after irradiation.     

X-ray diffraction and photoelectron spectroscopy study of swift heavy ion irradiated Mn/p-Si structure

The electronic structure and interfacial chemistry of thin manganese films on p-Si (1 0 0) have been studied by photoelectron spectroscopy measurements using synchrotron radiation of 134 eV and from X-ray diffraction data. The Mn/p-Si structures have been irradiated from swift heavy ions (∼100 MeV) of Fe⁷⁺ with a fluence of 1 × 10¹⁴ ions/cm². Evolution of valence band spectrum with a sharp Fermi edge has been obtained. The observed Mn 3d peak has been related to the bonding of Mn 3d-Si 3sp states. Mn 3p (46.4 eV), Mn 3s (81.4 eV) and Si 2p (99.5 eV) core levels have also been observed which show a binding energy shift towards lower side as compared to their corresponding elemental values. From the photoelectron spectroscopic and X-ray diffraction results, Mn₅Si₃ metallic phase of manganese silicide has been found. The silicide phase has been found to grow on the irradiation.     

Nano/micro structure synthesis on semiconducting substrate and their characterization

In this paper electrical and field emission properties of the randomly distributed copper, iron and nickel nanowires on GaAs substrate are presented. Semiconducting (GaAs) wafers, spin coated with thin polymeric films were irradiated with 50 MeV Li (+3) ions at a fluence of 8 × 10⁷ ions/cm², followed by UV irradiation and chemically etching in aqueous NaOH (6N, at room temperature). The wires have been deposited potentiostatically into the pores of the track-etch polycarbonate membrane spin coated onto the GaAs substrate. The size, shape and morphology of the deposits are strongly dependent of the preparation conditions such as deposition potential, current density, electrolyte and etching conditions. Later, morphological, electrical and field emission properties of the so deposited nano-/micro-structures were studied.     

Optical studies in gamma irradiated Mg doped CaF2 single crystals

Pure and Mg doped CaF₂ single crystals grown by the Bridgman method were irradiated with gamma rays (γ-rays) for doses ranging from 97 Gy to 9.72 KGy. The pristine samples showed minimal absorption indicating the purity of the samples. The γ-irradiated pure CaF₂ crystals showed prominent and strong absorption with a peak at ~ 374 nm besides three weak ones at ~ 456, 523 and 623 nm. However γ-rayed Mg doped crystals showed a prominent absorption with a strong peak at ~ 370 nm and a broad one at ~ 530 nm. The absorption indicated the generation of F and F-aggregate centers in the irradiated crystals. The photoluminescence (PL) emission spectrum of both pure and Mg doped crystals showed prominent emission at ~ 390 nm when they were excited at ~ 250 nm. Also, when the samples were excited at 323 and 363 nm strong emissions were observed at ~ 430 and 422 nm respectively. The optical absorption and PL intensities were found to increase with increase in dose.     

Structural phase diagram for ZnS nanocrystalline thin films under swift heavy ion irradiation

The synthesis of nanocrystalline ZnS thin films by pulsed laser deposition and their modification by swift heavy ions are presented. The irradiations with 150 MeV Ni ions at fluences of 1×10¹¹, 1×10¹² and 1×10¹³ ions/cm² have been used for these studies. Irradiation results in structural phase transformation and bandgap modification of these films are investigated by using X-ray diffraction and UV-visible absorption measurements, respectively. Since stoichiometry changes induced by irradiation can contribute to the modification of these properties, elastic recoil detection analysis has been performed on pristine and 150 MeV Ni ions irradiated ZnS thin films using a 120 MeV Ag ion beam. The stoichiometry of the films has been found to be similar for pristine and ion irradiated samples. A structural phase diagram based on thermal and pressure spikes has been constructed to explain the structural phase transformation.     

Photoluminescence studies of γ-irradiated CaF2:Dy:Pb:Na single crystals

The optical absorption (OA) and photoluminescence (hereafter referred to as luminescence) studies were made on CaF₂:Dy:Pb:Na single crystals (Dy—0.005 at%, Pb—0.188 at% and Na—0.007 at%) before and after γ-irradiation. The unirradiated crystal exhibited a strong OA band around 6.36 eV attributed to the ‘A’ band absorption of Pb²⁺ ions. The γ-irradiated crystal exhibited OA bands around 2.06, 3.28, 3.75 (broad shoulder) and 2.48 eV. The first three bands could be tentatively attributed to M_Na centre when compared with that of the coloured CaF₂:Na. The origin of 2.48 eV band was not explicitly known. Luminescence emission and excitation of Pb²⁺ and Dy³⁺ ions were negligible in the unirradiated crystal. Irradiated crystal exhibited a strong excitation spectrum with overlapping bands, due to different colour centres, in the UV-vis region for the 2.15 eV emission characteristic of Dy³⁺ ion. When excited, the absorbed energy (may be a part) was transferred from a colour centre to nearby Dy³⁺ ions and Dy³⁺ characteristic emission was observed. Exciting the irradiated crystal around 3.28 eV yielded emission at 2.56, 2.15 and 1.76 eV. The first two emission bands were due to Dy³⁺ ions. The excitation spectrum for the 1.76 eV emission showed two prominent bands around 2.02 and 3.08 eV and hence the emission was attributed to the M_Na centre. The luminescence mechanism was described.     

Thermoluminescence, structural and magnetic properties of a Li2O-B2O3-Al2O3 glass system doped with LiF and TiO2

A Li₂O-B₂O₃-Al₂O₃ glass system, un-doped and doped with LiF, and/or TiO₂ was synthesized by the fusion method and its physical properties were investigated by thermoluminescence (TL), X-ray diffraction (XRD), electron paramagnetic resonance (EPR), atomic force microscopy (AFM) and differential thermal analysis (DTA). The samples were subjected to γ-rays from a colbalt-60 (⁶⁰Co) source. These techniques provided evidence of LiF and LiF doped with Ti crystal formation in the glass system. A TL glow peak at about 433 K was sensitive to ⁶⁰Co γ-rays and showed good linearity with doses and consequently could be used to quantify radiation doses.     

Luminescence studies on swift heavy ion irradiated nanocrystalline aluminum oxide

Pellets of nanocrystalline aluminum oxide synthesized by a combustion technique are irradiated with 120 MeV Au⁹⁺ ions for fluence in the range 5×10¹¹-1×10¹³ ions cm⁻². Two photoluminescence (PL) emissions, a prominent one with peak at ∼525 nm and a shoulder at ∼465 nm are observed in heat treated and Au⁹⁺ ion irradiated aluminum oxide. The 525 nm emission is attributed to F₂²⁺-centers. The PL intensity at 525 nm is found to increase with increase in ion fluence up to 1×10¹² ions cm⁻² and decreases beyond this fluence. Thermoluminescence (TL) of heat-treated and swift heavy ion (SHI) irradiated aluminum oxide gives a strong and broad TL glow with peak at ∼610 K along with a weak shoulder at 500 K. The TL intensity is found to increase with Au⁹⁺ ion fluence up to 1×10¹³ ions cm⁻² and decreases beyond this fluence.     

Evidence of the primary-color photoluminescence in ion (H,H,C) irradiated and thermal annealed SrTiO3

We have measured photoluminescence (PL) spectrum of (1) thermal-annealed SrTiO₃/Si thin film and undoped SrTiO₃ single crystal; (2) SrTiO₃ single crystal irradiated by high energy (3 MeV) proton, deuterium, and He ion beams and (3) SrTiO₃ single crystal irradiated by low energy (60 keV) H⁺ and C⁻ ions. Two PL emissions are induced in (1) and (2) at visible frequencies 3 and 2.45 eV, while another PL peak is induced at 2 eV in (3). When compared with our previous PL experiments on high-temperature annealed SrTiO₃/SiO₂/Si thin film and 3 MeV proton (H⁺) irradiated STO single crystal, these results confirm that the three PL emissions with blue (3 eV), green (2.45 eV), and red-orange (2 eV) frequencies originate indeed from SrTiO₃. These primary-color PL effect induced at room-temperature makes STO a strong candidate material for future oxide-based optoelectronic application.     

Yrast cascade in 60Ni

Yrast levels of ⁶⁰Ni were investigated via the study of in-beam γ-rays induced by 15–25 MeV α-partictes on ⁵⁸Ni, 26–48 MeV ¹²C ions on ⁵⁰Cr and 30–60 MeV ¹⁶O ions on ⁴⁶Ti. The compound nucleus formed by these target-projectile combinations is ⁶²Zn, and its decay by two-proton emission populates yrast levels of ⁶⁰Ni. The ordering and decay modes of the yrast levels were determined from the analyses of in-beam γ-ray angular distribution and γ-γ coincidence measurements. The new levels established are at 4.262, 5.345 and 6.807 MeV. These together with the known 2₁⁺ (1.332 MeV) and 4₁⁺(2.505 MeV) levels constitute the yrast cascade. The spin assignments based on the present study are 6, 7, 9 for the 4.262, 5.345 and 6.807 MeV levels, respectively. The excitation functions for the yrast γ-rays from the ⁵⁰Cr(¹²C, 2p)⁶⁰Ni reaction show peaks near 33 MeV incident energy.     

Luminescence studies on gamma irradiated KCl: Ce crystals

This paper reports thermoluminescence(TL), optical absorption and TL emission studies that are made on Ce³⁺ doped KCl single crystals irradiated at room temperature. The glow curve and optical absorption studies indicate the participation of Ce³⁺ ions in the TL process. The TL study suggests the presence of low concentration of Ce³⁺ ions which reduces the TL efficiency with respect to pure KCl samples. On F bleaching γ irradiated crystals Z₁ centers are observed. A broader and strongly intense violet blue emission at 290, 370, 423 and 488 nm has been observed with 240 nm excitation. This emission has been attributed due to the transition from 5d(2D) excited energy level to the 4f¹ ground stable energy level (2F_5/2 and 3F_7/2) of Ce³⁺ doped KCl crystals.     

Etude du noyau 63Cu par la reaction 60Ni(α, pγ)63Cu

The level structure and the decay properties of low-lying levels in ⁶³Cu have been investigated via the ⁶⁰Ni(α, pγ)⁶³Cu reaction at E_α = 11.7MeV. Using a Ge(Li) detector, the correlations of twenty-five primary γ-rays in coincidence with protons, stopped in an annular detector at approximatively 180° with respect to the beam direction, were measured. From these measurements, branching ratios, γ-ray mixing ratios and spin assignments have been obtained for most of the levels up to 2.4 MeV excitation.     

Study of5Li around 20 MeV excitation energy by a radiative capture reaction

The nucleus⁵Li has been investigated within an excitation range of 17.8 – 21.1 MeV by measuring γ-rays from the reaction D(τ, γ _o)⁵Li. In this range, excitation functions and angular distributions have been taken. The excitation functions exhibit broad maxima at 20 MeV which indicate, in agreement with other results, a level or a group of levels. Assuming that there is only one resonance, its properties are discussed. On the basis of the existing and the new experimental results, aJ ^π=1/2⁺ assignment is proposed besides the former resultJ ^π=(3/2, 5/2)⁺.