Emission properties of dopants rubrene and coumarin 6 in Alq3 films

We have investigated the emission properties of dopants 5,6,11,12-tetraphenylnapthacene (rubrene) and 3-(2′-benzothiazolyl)-7-diethylaminocoumarin (coumarin 6) as well as co-doping of these two dopants in tris (8-hydroxyquinolinato) aluminum (Alq₃) films in double-layer organic light emitting diodes (OLEDs). We varied the rubrene (Rb) doping concentration in Alq₃:Rb films up to 10 wt%. The maximum luminescence efficiency of ∼6.5 cd/A was observed for Rb doping concentration of ∼0.7 wt% in Alq₃:Rb film, which was nearly double efficiency compared to pure Alq₃ device. The co-doping of dopants of C-6 and Rb in the ratio of 1:1 and 1:2 in Alq₃ films reduced the bias voltage compared to pure Alq₃ and Alq₃:C-6 devices for the same current density. The maximum luminescence efficiency was improved to ∼7 cd/A in Alq₃:{C-6:Rb(1:2)} film OLED. The direct recombination of holes and electrons in the dopant molecules may be responsible for the improvement of the luminescence efficiency. We also observed the shifting of photoluminescence (PL) and electroluminescence (EL) peaks position from ∼515 to ∼562 nm by co-doping of Rb and C-6 in Alq₃.     

A comparative study of electrode effects on the electrical and luminescent characteristics of Alq3/TPD OLED: Improvements due to conductive polymer (PEDOT) anode

The performance of organic light emitting device (OLED) structures, based on identically fabricated Alq₃/TPD active regions, with various anode and cathode electrode structures are compared, and performance differences related to the different anode structure. The best performance was achieved with a conductive polymer, 3,4-polyethylenedioxythiopene-polystyrenesultonate (PEDOT), used as an anode layer, yielding a brightness of 1720 cd/m² at 25 V, a turn-on voltage of 3 V, and electroluminescence (EL) efficiency and external quantum efficiency of 8.2 cd/A and 2%, respectively, at a brightness of 100 cd/m² and 5 V. Compared to a baseline device (TPD/Alq₃/Al), PEDOT anodes substantially reduce the turn-on voltage and made current injection almost linear after turn-on, whiles devices incorporating a LiF and CuPc layers significantly improved device efficiency while slightly improving turn-on voltage and maintaining superlinear I-V injection. This is attributed to the reduced barrier at the organic-organic interface in PEDOT, the ‘ladder’ effect of stepping the band offset over several interfaces, and the favorable PEDOT film morphology. The benefit of the PEDOT anode is clearly seen in the improvement in device brightness and the high external quantum efficiency obtained.     

Low driving voltage in organic light-emitting diode using MoO3/NPB multiple quantum well structure in hole transport layer

Driving voltage of organic light-emitting diode (OLED) is lowered by employing molybdenum trioxide (MoO₃)/N, N'-bis(naphthalene-1-yl)-N,N'-bis(phe-nyl)-benzidine (NPB) multiple quantum well (MQW) structure in hole transport layer. For the device with double quantum well (DQW) structure of ITO/ [MoO₃ (2.5 nm)/NPB (20 nm)]₂/Alq₃(50 nm)/LiF (0.8 nm)/Al (120 nm)], the turn-on voltage is reduced to 2.8 V, which is lowered by 0.4 V compared with that of the control device (without MQW structures), the driving voltage is 5.6 V, which is reduced by 1 V compared with that of the control device at the 1000 cd/m². In this work, the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure, which is attributed not only to the reducing energy barrier between ITO and NPB, but also to the forming charge transfer complex between MoO₃ and NPB induced by the interfacial doping effect of MoO₃.     

Characterization of two-emitter WOLED with no additional blocking layer

In this paper, white organic light emitting diodes (WOLEDs) utilizing two primary-color emitters with no additional blocking layer are fabricated. With a structure of ITO/2TNATA (20 nm)/NPB (20 nm)/NPB: rubrene (2%) (10 nm)/ADN (30 nm)/Alq₃ (20 nm)/LiF (1 nm)/Al (100 nm), a white light with CIE coordinates of (0.344, 0.372) is generated at a current density of 30 mA/cm² and the electroluminescence (EL) spectra consist of two broad bands around 456 nm (ADN) and 556 nm (NPB:rubrene). The device shows the low turn-on voltage and bright white emission with a power efficiency of 2.3 lm/W at a luminance of 100 cd/m². Through control of the location of the recombination zone and energy transfer, a stable white light emission is achieved. The maximum color shift is less than 0.02 units on the 1931 CIE x,y chromaticity diagram. Given the spectral power distribution of WOLED, the parameters of a light source (chromaticity coordinate, CCT, CRI, and the luminous efficacy) can be calculated. A MATLAB program for this purpose is developed in this paper. Based on this, the design of WOLED for an illumination and display system using a white emitter with color filter arrays is discussed.     

Pure red emission of dye-doped organic molecules from microcavity organic light emitting diode

Organic red emitting diode was fabricated by using 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1 H,5H-benzo[ij]quinolizin-8-yl)vinyl]-4H-pyran (DCM)-doped tri-(8-quinolitolato) aluminum (Alq₃) as emitter with the structure of G/ITO/NPB(25 nm)/DCM:Alq₃(55 nm)/Alq₃(20 nm)/LiF (1.2 nm)/Al(84 nm), (glass/indium–tin-oxide/4,4-bis-[N-(1-naphthyl)-N-phenyl-amino]biphenyl, G/ITO/NPB), the wavelength of the maximal emission of which is 615 nm. By introducing cavity to Organic light emitting diode (OLED), we got pure red emitting diode with wavelength of the maximal emission of 621 nm and full-width at half-maximum (FWHM) of 27 nm. As far as we know, it is the best result in the dye-doped organic red emitting diode. We also made a device of G/ITO/NPB(25 nm)/DCM:Alq₃(29 nm)/DCM:PBD(26 nm)/Alq₃(20 nm)/LiF(1.2 nm)/Al(84 nm), in order to compare the performance of Alq₃ with that of 2-(4-biphenylyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole (PBD) as host material. It was found that the performance of device A is better than that of C both in brightness and color purity,as well as in EL efficiency.     

Tandem organic light-emitting diodes with an effective charge-generation connection structure

The tandem organic light-emitting diodes (OLEDs) with an effective charge-generation connection structure of Mg-doped tris(8-hydroxyquinoline) aluminum (Alq₃)/Molybdenum oxide (MoO₃)-doped 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) were presented. At a current density of 50 mA/cm², the current efficiency of the tandem OLED with two standard NPB/Alq₃ emitting units is 4.2 cd/A, which is 1.7 times greater than that of the single EL device. The tandem OLED with the similar connection structure of Mg-doped PTCDA/ MoO₃-doped PTCDA was also fabricated and the influences of the different connection units on the current efficiency of the tandem OLED were discussed as well.     

Highly efficient and stable organic light-emitting diode by balancing drift current of charge

Highly efficient and stable OLED device in which hole-drift current and electron-drift current are balanced was fabricated. Drift current characteristics according to the thickness of organic layer were examined using the device with ITO/m-MTDATA/NPB/Al structure that can only move the hole and the device with Al/LiF/Alq₃/LiF/Al structure that can only move the electron. Using the result of such examination, green device with balanced drift current was produced. Device with the structure of m-MTDATA (80 nm)/NPB (20 nm)/C-545T (3%) doped Alq₃ (5 nm)/Alq₃ (59 nm)/LiF (1 nm)/Al (200 nm) showed color purity of (0.309, 0.643) and high efficiency of 7.0 lm/W (14.4 cd/A). Most of light emission was observed inside the green emitting layer. Through the result of EL spectrum for the device also including red emitting layer, same result could be obtained. The device with balanced drift current also showed half life-time of 175 h for initial luminance of 3000 cd/m², which is more stable in comparison to the device without balanced drift current.     

Improved performances of the organic light-emitting devices by doping in the mixed layer

The brightness, efficiency and lifetime of organic light-emitting diodes (OLEDs) were remarkably improved by doping in a mixed layer. In this device, the emitting layer consists of a mixture of -naphthylphenybiphenyl amine (NPB), tris (8-hydroxyquinolinolate) aluminum (Alq₃) (referred to as the mixed layer) and an emissive dopant 5,6,11,12-petraphenylnaphthacene (rubrene), where the concentration of NPB declined while the concentration of Alq₃ was increased gradually in the deposition process. The device exhibited a maximum emission of 49,300 cd/m² at a destroy voltage of 35 V and a maximum efficiency of 7.96 cd/A at 10 V, respectively. The efficiency improves twofold in comparison with the conventional doped devices. Meanwhile, the device exhibited superior operational stability with a half-life time of 1000 h at a starting luminance of 1000 cd/m² by a constant current driver.     

同时掺杂磷光和荧光染料的白色有机电致发光器件性能研究

以磷光染料Ir(piq)₂(acac)作为发光掺杂剂,掺入空穴传输性主体材料NPB中得到红色发光层,荧光材料TBP掺入到主体CBP中作为蓝色发光层,制备了结构为ITO/NPB/NPB：Ir(piq)₂(acac)/CBP/CBP：TBPe/BCP/ALq/Mg：Ag的双发光层白色有机电致发光器件.其中ALq₃、未掺杂的NPB和CBP及BCP层分别作为电子传输层、空穴传输层和激子阻挡层.实验中通过调节发光层厚度及Ir(piq)_{2关键词： 磷光 激子阻挡层 有机电致发光}     

Highly efficient and stable organic light-emitting diodes employing MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride as hole injection layer

We report highly efficient and stable organic light-emitting diodes (OLEDs) with MoO₃-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA) as hole injection layer (HIL). A green OLED with structure of ITO/20 wt% MoO₃: PTCDA/NPB/Alq₃/LiF/Al shows a long lifetime of 1012 h at the initial luminance of 2000 cd/m², which is 1.3 times more stable than that of the device with MoO₃ as HIL. The current efficiency of 4.7 cd/A and power efficiency of 3.7 lm/W at about 100 cd/m² have been obtained. The charge transfer complex between PTCDA and MoO₃ plays a decisive role in improving the performance of OLEDs.     

UV exposure and photon degradation of Alq3 powders

Tris-(8-hydroxyquinoline)aluminum (Alq₃) is a widely used light emitting material. It is also used as an electron transporting layer in organic light emitting devices (OLEDs). Degradation is, however, a major problem in these devices. The device performance is affected by parameters such as air, moisture and light exposure [1,2]. In this work the effect of photon degradation of Alq₃ in air is investigated. Alq₃ phosphor powder was synthesized using a co-precipitation method and recrystalized in acetone. The structure of the sample was determined by using x-ray diffraction (XRD). The averaging particle size estimated from the broadened XRD peaks using Scherrer's equation was 40±4 nm in diameter. The excitation photoluminescence data that was collected correspond well to the absorption data. To study the photon degradation, the sample was irradiated with an UV lamp for ∼330h. The emission data was collected and the change in photoluminescence intensity with time was monitored.     

Blue organic light-emitting diodes with 2-methyl-9,10-bis(naphthalen-2-yl)anthracene as hole transport and emitting layer and the impedance spectroscopy analysis

2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN) based fluorescent blue organic light-emitting diodes (OLEDs) are demonstrated. With MADN as emitting layer, experiments indicate that thick MADN (40–60 nm) is preferable for constructing efficient blue OLED. With MADN as hole-transport and emitting layer and tris(8-hydroxy-quinolinato)aluminium (Alq₃) as electron-transport layer, the OLED electroluminescent characteristics show a mixture emission of MADN and Alq₃ with Commission Internationale d'Eclairage (CIE) color coordinates of (0.25, 0.34), indicating feasible hole transporting in MADN. Using 4,7-diphenyl-1,10-phenanthroline (BPhen) replacing Alq₃ as electron-transport layer, the OLED shows deep blue emission with a maximum luminous efficiency of 4.8 cd/A and CIE color coordinates of (0.16, 0.09). The hole transport characteristics of MADN are further clarified by constructing hole-only device and performing impedance spectroscopy analysis. The results indicate that MADN shows superior hole-transport ability which is almost comparable to typical hole-transport material of N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)-benzidine (NPB), suggesting a promising application for constructing efficient blue OLED with integrated hole-transport layer and emitting layer.     

Blue organic light-emitting diodes with low driving voltage and maximum enhanced power efficiency based on buffer layer MoO3

Blue organic light-emitting devices based on wide bandgap host material, 2-(t-butyl)-9, 10-di-(2-naphthyl) anthracene (TBADN), blue fluorescent styrylamine dopant, p-bis(p-N,N-diphenyl-amino-styryl)benzene (DSA-Ph) have been realized by using molybdenum oxide (MoO₃) as a buffer layer and 4,7-diphenyl-1,10-phenanthroline (BPhen) as the ETL. The typical device structure used was glass substrate/ITO/MoO₃ (5 nm)/NPB (30 nm)/[TBADN: DSA-Ph (3 wt%)](35 nm)/BPhen (12 nm)/LiF (0.8 nm)/Al (100 nm). It was found that the MoO₃∥BPhen-based device shows the lowest driving voltage and highest power efficiency among the referenced devices. At the current density of 20 mA/cm², its driving voltage and power efficiency are 5.4 V and 4.7 Lm/W, respectively, which is independently reduced 46%, and improved 74% compared with those the m-MTDATA∥Alq₃ is based on, respectively. The J-V curves of ‘hole-only’ devices reveal that a small hole injection barrier between MoO₃∥NPB leads to a strong hole injection, resulting low driving voltage and high power efficiency. The results strongly indicate that carrier injection ability and balance shows a key significance in OLED performance.     

High efficiency rubrene based inverted top-emission organic light emitting devices with a mixed single layer

Inverted top-emission organic light emitting devices (TEOLEDs) with a mixed single layer by mixing of electron transport materials (PyPySPyPy and Alq₃), hole transport material (α-NPD) and dope material (rubrene) were investigated. Maximum power efficiency of 3.5 lm/W and maximum luminance of 7000 cd/m² were obtained by optimizing the mixing ratio of PyPySPyPy:Alq₃:α-NPD:rubrene=25:50:25:1. Luminance and power efficiency of mixed single layer device were two times improved compared to bi-layer heterojunction device and tri-layer heterojunction device. Lifetime test also shows that the mixed single layer device exhibits longer operational lifetimes of 343 h, which is three times longer than the 109 h for tri-layer device, and two times longer than the 158 h for bi-layer device. In addition, the maximum luminance and power efficiency were obtained at 20,000 cd/m² and 7.5 lm/W, respectively, when a TPD layer of 45 nm was capped onto the top metal electrode.     

Improved performances of red organic light-emitting devices by co-doping a rubrene derivative and DCJTB into tris-(8-hydroxyquinoline) aluminum host

Performances of red organic light-emitting device were improved by co-doping 2-formyl-5,6,11,12-tetraphenylnaphthacene (2FRb) and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetra-methyljulolidyl-9-enyl)-4H-pyran (DCJTB) in tris-(8-hydroxyquinoline) aluminum (Alq₃) host as the emitting layer. The device with 1 wt% DCJTB and 2.4 w% 2FRb in Alq₃ host gave a saturated red emission with CIE chromaticity coordinates of (0.65, 0.35) and a maximum current efficiency as high as 6.45 cd/A, which are 2 and 2.4 fold larger than that of the device with 1 wt% DCJTB (3.28 cd/A) in Alq₃ host and the device with 2.4 wt% 2FRb (2.72 cd/A) in Alq₃ host at the current density of 20 mA/cm², respectively. The improvement could be attributed to the effective utilization of host energy by both energy transfer and trapping in the electroluminescence process and the depression of concentration quenching between the dopants molecules.     

Efficient white organic light-emitting devices using 4,7-diphenyl-1,10-phenanthroline as block layer

A white light-emitting device has been fabricated with a structure of ITO/m-MTDATA (45 nm)/NPB (10 nm)/DPVBi (8 nm)/DPVBi:DCJTB 0.5% (15 nm)/BPhen (x nm)/Alq₃ [(55−x) nm]/LiF (1 nm)/Al, with x=0, 4, and 7. BPhen was used as the hole-blocking layer. This results in a mixture of lights from DPVBi molecules (blue-light) and DCJTB (yellow-light) molecules, producing white light emission. The chromaticity can be readily adjusted by only varying the thickness of the BPhen layer. The CIE coordinates of the device are largely insensitive to the driving voltages. When the thickness of BPhen is 7 nm, the device exhibits peak efficiency of 6.87 cd/A (3.59 lm/W) at the applied voltage of 6 V, the maximum external quantum efficiency η_ext=2.07% corresponding to 6.18 cd/A, and the maximum brightness is 18494 cd/m² at 15 V.     

Improved electron injection of OLEDs with a thin PBD layer at Alq3/Cs2CO3 interface

In this study, the effect of one oxadiazole derivative (PBD) using as an electron injection layer (EIL) at Alq₃/Cs₂CO₃ interface has been investigated. The present of PBD EIL was showed an interesting enhanced electron injection for OLEDs although the nominal electron injection barrier for PBD based OLEDs is much larger, because PBD owns an obvious higher intrinsic the Lowest Unoccupied Molecular Orbital level (2.3 eV) than that of Alq₃ (3.0 eV). For example, the current density of OLEDs at 8 V was increased from 54 mA/cm² to 168 mA/cm² when inserting a thin PBD layer (5 nm) at Alq₃/Cs₂CO₃ interface. Here the increased current is suggested associating with the changed electronic structure of PBD when it contacts with Cs₂CO₃.     

Study of photophysical properties AlBaq5

Pure and Ba²⁺ doped Alq₃ complexes were synthesized by simple precipitation method at room temperature, maintaining stoichiometric ratio. These complexes were characterized by XRD, UV–vis and FT-IR and photoluminescence (PL) spectra. XRD analysis reveals the polycrystalline nature of the synthesized complexes, while UV and FTIR confirm the molecular structure and the completion of quinoline ring formation and presence of quinoline structure in the metal complex. PL spectra of Alq₃ compared with barium doped complexes exhibit highest intensity in comparison to Alq₃ phosphor, which proves that barium enhances PL emission intensity of Alq₃ phosphor. The excitation spectra of the synthesized complexes are in the range of 300–480 nm with a broad peak in the range of 429–440 nm and shoulder at 380 nm, but with varying intensity. The emission wavelength lies in the range of 501–506 nm. Among all the synthesized complexes, AlBa₂q₅ exhibits maximum emission intensity. These remarkable properties of AlBaq₅ could be considered as promising materials as optoelectronic materials as well as green light emissive materials for OLEDs, PLLCD and solid state lighting applications.     

Efficient red organic light-emitting diode sensitized by a phosphorescent Ir compound

The efficiencies of red organic light-emitting diode (OLED) using tris-(8-hydroxy-quinoline)aluminum (Alq₃) as host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant were greatly increased by adding a small amount (0.3 wt%) of Ir compound, iridium(III) bis(3-(2-benzothiazolyl)-7-(diethylamino)-2H-1-benzopyran-2-onato-N′,C⁴) (acetyl acetonate) (Ir(C6)₂(acac)), as a sensitizer. The device has a sandwiched structure of indium tin oxide (ITO)/4,4′,4″-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine (T-NATA) (40 nm)/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′ diamine (NPB) (40 nm)/Alq₃:DCJTB (0.7 wt%):Ir(C6)₂(acac) (0.3 wt%) (40 nm)/Alq₃ (40 nm)/LiF (1 nm)/Al (120 nm). It can be seen that the current efficiencies of this device remained almost (13.8±1) cd/A from 0.1 to 20,000 cd/m² and the Commission International d’Eclairage (CIE) coordinates at (0.60, 0.37) in the range of wide brightness. The significant improvement was attributed to the sensitization effect of the doped Ir(C6)₂(acac), thus the energy of singlet and triplet excitons is simultaneously transferred to the DCJTB.     

Synthesis and luminescence properties of red-emitting phosphors NaY0.87Eu0.13(WO4)1.2(MoO4)0.8

A series of NaY_1−yEu_y(WO₄)_2−x(MoO₄)_x (x=0−2 and y=0.06−0.15) phosphors have been prepared by a combustion route. X-ray powder diffraction, photoluminescence excitation and emission spectra were used to characterize the resulting samples. The excitation spectra of these phosphors show the strongest absorption at about 396 nm, which matches well with the commercially available n-UV-emitting GaN-based LED chip. Their emission spectra show an intense red emission at 616 nm due to the ⁵D₀→⁷F₂ electric dipole transition of Eu³⁺. As the Mo content increases, the intensity of the ⁵D₀→⁷F₂ emission of Eu³⁺ activated at wavelength of 396 nm increases and reaches a maximum when the relative ratio of Mo/W is 2:3. The intense red-emission of the tungstomolybdate phosphors at near-UV excitation suggests that the material is a potential candidate for white light emitting diode (WLEDs).