High power diode-pumped passively Q-switched and mode-locking Nd:GdVO4 laser at 912 nm

A high power diode-end-pumped passively Q-switched and mode-locking (QML) Nd:GdVO₄ laser at 912 nm was demonstrated for the first time, to the best of our knowledge. A Z-type laser cavity with Cr⁴⁺:YAG crystals as the intracavity saturable absorber were employed in the experiments. Influence of the initial transmission (T_U) of the saturable absorber on the QML laser performance was investigated. Using the T_U = 95% Cr⁴⁺:YAG, as much as an average output power of 2.0 W pulsed 912 nm laser was produced at an absorbed pump power of 25.0 W, then the repetition rates of the Q-switched envelope and the mode-locking pulse were ~ 224 kHz and ~ 160 MHz, respectively. Whereas the maximum output power was reduced to 1.3 W using the T_U = 90% Cr⁴⁺:YAG, we obtained a 100% modulation depth for the mode-locking pulses inside the Q-switched envelope.     

Theoretical and experimental investigations of a diode-pumped high-power continuous-wave 912 nm Nd:GdVO4 laser operation at room temperature

Based on the rate equation of Nd³⁺-doped quasi-three-level lasers, a theoretical model of diode-end-pumped continuous-wave 912 nm Nd:GdVO₄ laser is presented. Lasing threshold and slope efficiency considering reabsorption effect are calculated and analyzed. It is found that the output performance of 912 nm laser operating at room temperature is influenced remarkably by the reabsorption loss and spatial distribution of the pump beam and laser beam. In experiments, the output power and average slope efficiency of 912 nm laser were investigated under different conditions. After optimization at the parameters of laser medium, working temperature and spatial distribution of the pump beam, up to 16.2 W continuous-wave 912 nm laser output was obtained at incident pump power of 67.0 W, with an average slope efficiency of 41.7%, to the best of our knowledge, this is the highest output power of diode-pumped 912 nm Nd:GdVO₄ laser by far.     

Passively Q-switched diode-pumped Cr:YAG/Nd:GdVO4 monolithic microchip laser

The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO₄ crystal and a Cr⁴⁺:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO₄ optically contacted on a 0.4 mm long Cr⁴⁺:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.     

The study of green laser performances by using composite crystals of different initial transmissions

This paper reported a passively Q-switched green laser of LD pumped linear cavity structure by using Nd:YAG/Cr⁴⁺:YAG composite crystal and the type II phase matching KTP crystal. The dependence of average output power, pulse width and pulse repetition rate on pump power at different initial transmissions of Cr⁴⁺:YAG were measured and analyzed. With Cr⁴⁺:YAG of 80% initial transmission, under pump power of 13.97 W, the output average power is up to 681 mW, with pulse width of 200 ns and pulse repetition rate of 9.1 kHz. The laser operates in a fundamental mode.     

Diode-end-pumped passively Q-switched Nd:Y0.8Lu0.2VO4 laser with Cr:YAG crystal

A diode end-pumped passively Q-switched Nd: Y_0.8Lu_0.2VO₄ laser with a Cr⁴⁺: YAG crystal is first demonstrated in this paper. The maximum continuous wave (CW) output power of 5.59 W is obtained at the incident pump power of 13.07 W with the output transmission T = 20%, resulting in an optical-to-optical efficiency of 42.7%. For Q-switching operation, the measured pulse duration of 8.5 ns, the pulse energy of 45.24 μJ and the peak power of 5.32 kW are respectively obtained for the output transmission of 50% when the Cr⁴⁺: YAG crystal is used with an initial transmission (T₀) of 60%.     

LD end-pumped intracavity frequency doubled Yb:YAG laser

A laser diode end-pumped 10 at.% doped Yb:YAG microchip crystal intracavity frequency doubled all solid-stated green laser is reported in this paper. Using one plano-concave resonator, with the pump power of 1.2 W, 44.2 mW TEM₀₀ continuous wave (CW) laser at 525 nm was obtained, the optical conversion efficiency was about 3.7%. When a Cr:YAG crystal with initial transmission of 95.5% inserted in the resonator, the maximum output power of 6.4 mW, pulse duration width of 49.1 ns, pulse repetition rate of 2.45 kHz, and peak power of 53.1 W at 515 nm were achieved when the pump power was 1.2 W. The wavelength changed from 525 nm to 515 nm and the threshold was only 725 mW.     

High-power passively Q-switched Nd:YVO<Subscript>4</Subscript> UV laser at 355 nm

We report on an efficient high-power passively Q-switched UV laser at 355 nm. We take into account the second threshold criterion and the thermal-lensing effect to design and realize a compact reliable passively Q-switched Nd:YVO₄ laser with Cr⁴⁺:YAG as a saturable absorber. At an incident pump power of 16.3 W, the average output power at 1064 nm reaches 6.2 W with a pulse width of 7 ns and a pulse repetition rate of 56 kHz. Employing the developed passively Q-switched laser to perform the extra-cavity harmonic generations, the maximum average output powers at 532 nm and 355 nm are up to 2.2 W and 1.62 W, respectively.     

Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror

We report on a diode pumped passively Q-switched Nd:Gd_0.64Y_0.36VO₄ laser with a Cr⁴⁺:YAG saturable absorber. We show experimentally that by using an appropriately coated GaAs wafer as output coupler, the Q-switched pulse width can be significantly suppressed. Stable Q-switched pulse train with pulse width of 2.2 ns, peak power of 26.3 kW, repetition rate of 15.38 kHz have been obtained under an absorbed pump power of 8.54 W. The physical mechanism of pulse width narrowing by the GaAs wafer was also experimentally investigated.     

Diode-pumped short pulse passively Q-switched 912 nm Nd:GdVO<Subscript>4</Subscript>/Cr:YAG laser at high repetition rate operation

A diode-end-pumped passively Q-switched 912 nm Nd:GdVO₄/Cr:YAG laser is demonstrated for the first time. In a concave-piano cavity, pulsed 912 nm laser performance is investigated using two kinds of Cr:YAG crystal with different unsaturated transmission (T _U) of 95% and 90% at 912 nm as the saturable absorbers. When the T _U = 90% Cr:YAG is used, as much as 2.6 W average output power for short pulsed 912 nm laser is achieved at an absorbed pump power of 34.0 W, corresponding to an optical efficiency of 7.6% and a slope efficiency of 20.3%. Moreover, 10.5 ns duration pulses and up to 2.3 kW peak power is obtained at the repetition rate around 81.6 kHz.     

Timing-jitter reduced high-repetition-rate Q-switched Nd:YVO<Subscript>4</Subscript>/Cr<Superscript>4+</Superscript>:YAG micro laser with low pump power

We report a high repetition rate Q-switched Nd:YVO₄/Cr⁴⁺:YAG micro laser with small pump power. Unwanted defects in pulse train, which are inherently large in passively Q-switched laser, was simply minimized by controlling temperature of Nd:YVO₄/Cr⁴⁺:YAG medium. When T ₀ = 90% Cr⁴⁺:YAG and R _OC = 90% output coupler were used, Q-switched Nd:YVO₄/Cr⁴⁺:YAG micro laser showed the optimum output; maximum output power of 58 mW, optical-to-optical efficiency of 9.1%, repetition rate of 1.1 MHz, and pulse width of 57 ns were achieved with 640 mW pumping. MHz-order repetition rate in Nd:YVO₄/Cr⁴⁺:YAG Q-switched laser with low pumping (<1 W) is the highest value to the best of our knowledge.     

Passively Q-switched GdVO<Subscript>4</Subscript>/Nd:GdVO<Subscript>4</Subscript> laser with Cr<Superscript>4+</Superscript>:YAG saturable absorber under direct 879 nm diode pumping to the emitting level

A passively Q-switched 1.06 μm laser with Cr⁴⁺:YAG saturable absorber by direct 879 nm diode pumping grown-together composite GdVO₄/Nd:GdVO₄ crystal to the emitting level was demonstrated in this paper. The characteristics of pulsed laser were investigated by using two kinds of Cr⁴⁺:YAG crystal with the initial transmissivity of 80 and 90%, respectively. When the T ₀ = 90% Cr⁴⁺:YAG was used, an average output power of 1.59 W was achieved at an incident pump power of 10 W. The pulse width and repetition rate were 64.5 ns and 170 kHz, respectively. The thermal lens effect of laser crystal was analyzed.     

Diode-pumped passively Q-switched intracavity frequency doubled Nd:GdVO4/KTP green laser

A compact diode-pumped passively Q-switched intracavity frequency-doubled Nd:GdVO₄/KTP green-pulse laser was demonstrated, using Cr⁴⁺:YAG as a saturable absorber in a simple flat–flat cavity. With a 5.9 W incident pump power, a passively Q-switched green laser was obtained with an average power of 397 mW, repetition rate of 40 kHz, and pulse width of 40 ns, when the initial transmission of Cr⁴⁺:YAG was 85%. The shortest pulse width of 30 ns, the highest green peak power of 696 W and the maximum pulse energy of 21 μJ were obtained when the initial transmission of Cr⁴⁺:YAG was 70%. Under CW green operation, we obtained 440 mW output power.     

LD-pumped passively Q-switched Nd:YVO4/YVO4 laser with an Nd3+:Cr4+:YAG saturable absorber

By using a piece of codoped Nd³⁺:Cr⁴⁺:YAG crystal as a saturable absorber, a laser-diode pumped passively Q-switched Nd:YVO₄/YVO₄ laser has been realized. The maximum laser output power of 2.452 W has been obtained at the incident pump power of 8.9 W for an 8.8% transmission of the output coupler at 1064 nm, corresponding to a slope efficiency of 30%. The other output laser characteristics of the laser have also been investigated. The laser with a Nd³⁺:Cr⁴⁺:YAG saturable absorber has a lower threshold pump power and a higher slope efficiency compared to that with a similar small-signal transmission of a Cr⁴⁺:YAG saturable absorber.     

Generation of 7.8 W at 355 nm from an efficient and compact intracavity frequency-tripled Nd:YAG laser

A high power, quasi-continuous wave ultraviolet laser at 355 nm was obtained by intracavity frequency tripling of a diode side-pumped acousto-optic (AO) Q-switched Nd:YAG laser. Type II critical phase-matched KTP and LBO crystals were used for the second harmonic generation and the third harmonic generation, respectively. Under the pump power of 180 W, 7.8 W average output power at 355 nm was obtained at 8 kHz with the pulse width of 50 ns, corresponding to the pump-to-ultraviolet conversion efficiency of 4.3%. The peak power and single pulse energies were estimated to be 18.8 kW and 938 μJ. Its far-field divergence was measured to be about 3.8 mrad. The instability of the 355 nm laser was less than 1% at an output power of 6.3 W for 2 h operation.     

Continuous-wave and passively Q-switched laser performance of a disordered Nd:GYSGG crystal

The performance of continuous wave (CW) and passively Q-switched Nd:GYSGG lasers was investigated for the first time. The CW output powers of 4.2 W with dual wavelength of 1058.4 nm and 1061.5 nm were obtained under the diode pump power of 17 W with slope efficiencies of 26%. By using Cr⁴⁺:YAG wafer as saturable absorber, Q-switching operation was performed and the short pulse with pulse width of 6.6 ns was obtained with the peak power of 9.97 kW.     

High repetition rate passive Q-switching of diode-pumped Nd:GdVO<Subscript>4</Subscript> laser at 912 nm with V<Superscript>3+</Superscript>:YAG as the saturable absorber

The character of a diode-pumped passively Q-switched Nd:GdVO₄/V³⁺:YAG 912 nm laser was demonstrated for the first time to our knowledge. With an absorbed pump power of 7.4 W, an average output power of 360 mW with a Q-switched pulse width of 328 ns at a pulse repetition rate of 163 kHz was obtained. The Q-switching efficiency was found to be 32.7%. Our work further indicated V³⁺:YAG could be an effective fast passive Q-switch for 0.9 μm radiation.     

Diode-laser pumped passively Q-switched green laser by intracavity frequency-doubling with periodically poled LiNbO3

A continuous-wave (CW) laser-diode (LD) pumped passively Q-switched intra-cavity frequency-doubling green laser is reported in this paper. We used 3% at Nd doped YVO₄ as gain medium, Cr⁴⁺:YAG as a saturable absorber for passively Q-switch and periodically poled LiNbO₃ (PPLN) as a frequency doubler. The output energy of the green laser is 1.96 μJ with the pulse-width of 15.6 ns. No green-noise problem exists in the green laser. Some theoretical results on the passive Q-switching and intra-cavity frequency-doubling are also discussed.     

High repetition rate passively Q-switched diode-pumped Nd:YVO4 laser

We demonstrated an efficient and compact, diode-pumped passively Q-switched Nd:YVO₄ laser operation at 1.064 μm wavelength with high repetition rate, using Cr⁴⁺:YAG as saturable absorber, formed with a simple flat–flat resonator. The maximum CW output power of 4.05 W was obtained at the incident pump power of 8 W. For Q-switched operation, the maximum average output power was measured to be 1.4 W with the corresponding repetition rate of 200 kHz, the pulse width of 60 ns when the initial transmission of Cr⁴⁺:YAG crystal was 85%. The shortest pulse width of 12 ns, the largest pulse energy of 36 μJ and the highest peak power of 3 kW were obtained when the Cr⁴⁺:YAG crystal with an initial transmission of 60% was used.     

Diode-pumped doubly passively Q-switched c-cut Nd:GdVO4 1.34 μm laser with V:YAG and Co:LMA saturable absorbers

By simultaneously using both V³⁺:YAG and Co:LMA saturable absorbers in the cavity, a diode-pumped doubly passively Q-switched c-cut Nd:GdVO₄ laser at 1.34 μm is demonstrated for the first time. The average output power, the pulse width and the pulse repetition rate have been measured. The experimental results show that the doubly passively Q-switched laser can generate shorter pulse width with higher peak power in comparison to the singly passively Q-switched laser only with V³⁺:YAG or Co:LMA saturable absorber. At the pump power 13 W, the pulse width has been compressed 83% and the peak power has been improved 15 times, respectively.     

High-peak-power,short-pulse-width,LD end-pumped,passively Q-switched Nd:YAG 946 nm laser

High-peak-power, short-pulse-width diode pumped 946 nm Nd:YAG laser in passively Q-switching operation with Cr⁴⁺:YAG is reported. The highest average output power reaches 3.4 W using the Cr⁴⁺:YAG with initial transmissivity T₀=95%. When the T₀=90% Cr⁴⁺:YAG is employed, the maximum peak power of 31.4 kW with a pulse width of 8.3 ns at 946 nm is generated.