Nanoscale imaging of hydrogen and sodium in alteration layers of corroded glass using ToF-SIMS: Is an auxiliary sputtering ion beam necessary?

The hydrogen (H)/sodium (Na) interface is of great interest in glass corrosion research. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) is one of the few techniques that can provide nanoscale H and Na imaging simultaneously. However, the optimized condition for ToF-SIMS imaging of H in glass is still unclear. In H depth profiling using ToF-SIMS, H background control is a key, in which an analysis ion beam and a sputtering ion beam work together in an interlaced mode to minimize it. Therefore, it is of great interest to determine if an auxiliary sputtering ion beam is also necessary to control H background in ToF-SIMS imaging of H. In this study, H imaging with and without auxiliary sputtering beams (Cs⁺, O₂⁺, and Ar_n⁺) was compared on a corroded international simple glass (ISG). It was surprising that the H/Na interface could be directly imaged using positive ion imaging without any auxiliary sputtering ion beam under a vacuum of 2 to 3 × 10⁻⁸ mbar. The H⁺ background was about 5% atomic percent on the pristine ISG glass, which was significantly lower than the H concentration in the alteration layer (~15%). Moreover, positive ion imaging could show distributions of other interesting species simultaneously, providing more comprehensive information of the glass corrosion. If an auxiliary O₂⁺ sputtering ion beam was used, the H⁺ background could be reduced but still higher than that in the depth profiling. Besides, this condition could cause significant loss of signal intensities due to strong surface charging.     

Etching Efficiency for Si and SiO2 by CF+x,F+, and C+ Ion Beams Extracted from CF4 Plasmas

Fluorocarbon (CF⁺ _x), fluorine (F⁺), and carbon (C⁺) ion beams with highcurrent density (50i<800 A/cm²) were irradiated to Si and SiO₂surfaces to investigate the influence of the ion species on the etchingefficiency. The ion beams were extracted from magnetized helicon-wave CF₄plasmas operated in pulsed modes. The CF⁺ ₃ beam had the largest etchingefficiency for Si at the same beam energy. When the same data weresummarized as a function of the momentum of the incident ion beam, thedifference in the etching efficiency became small, although the CF⁺ ₃ beamstill had a slightly larger etching efficiency. On the other hand, theetching efficiency for SiO₂ by the CF⁺ ₃ beam was larger than that by theother ion beams in the low-momentum region. In addition, in the low-momentumregion, the etching efficiency for SiO₂ by CF⁺ ₃ was larger than that forSi. These results suggest the high chemical reactivity of CF⁺ ₃ with SiO₂,leading to the high etching selectivity of SiO₂ over underlying Si in thefabrication of semiconductor devices.     

Depth profiling of Irganox‐3114 nanoscale delta layers in a matrix of Irganox‐1010 using conventional Cs+ and O2+ ion beams

Depth profiling of an organic reference sample consisting of Irganox 3114 layers of 3 nm thickness at depths of 51.5, 104.5, 207.6 and 310.7 nm inside a 412 nm thick Irganox 1010 matrix evaporated on a Si substrate has been studied using the conventional Cs⁺ and O₂⁺ as sputter ion beams and Bi⁺ as the primary ion for analysis in a dual beam time‐of‐flight secondary ion mass spectrometer. The work is an extension of the Versailles Project on Advanced Materials and Standards project on depth profiling of organic multilayer materials. Cs⁺ ions were used at energies of 500 eV, 1.0 keV and 2.0 keV and the O₂⁺ ions were used at energies of 500 eV and 1.0 keV. All four Irganox 3114 layers were identified clearly in the depth profile using low mass secondary ions. The depth profile data were fitted to the empirical expression of Dowsett function and these fits are reported along with the full width at half maxima to represent the useful resolution for all the four delta layers detected. The data show that, of the conditions used in these experiments, an energy of 500 eV for both Cs⁺ beam and O₂⁺ beam provides the most useful depth profiles. The sputter yield volume per ion calculated from the slope of depth versus ion dose matches well with earlier reported data. Copyright © 2013 John Wiley & Sons, Ltd.     

An effect of measurement conditions on the depth resolution for low‐energy dual‐beam depth profiling using TOF‐SIMS

An effect of measurement conditions on the depth resolution was investigated for dual‐beam time of flight‐secondary ion mass spectrometry depth profiling of delta‐doped‐boron multi‐layers in silicon with a low‐energy sputter ion (200 eV – 2 keV O₂⁺) and with a high‐energy primary ion (30 keV Bi⁺). The depth resolution was evaluated by the intensity ratio of the first peak and the subsequent valley in B⁺ depth profile for each measurement condition. In the case of sputtering with the low energy of 250 eV, the depth resolution was found to be affected by the damage with the high‐energy primary ion (Bi⁺) and was found to be correlated to the ratio of current density of sputter ion to primary ion. From the depth profiles of implanted Bi⁺ primary ion remaining at the analysis area, it was proposed that the influence of high‐energy primary ion to the depth resolution can be explained with a damage accumulation model. Copyright © 2013 John Wiley & Sons, Ltd.     

Toward accurate characterization of nitrogen depth profiles in ultrathin oxynitride films

Good accuracy in depth profile analyses of nitrogen in ultrathin oxynitride films is desirable for process development and routine process monitoring. Low energy SIMS is one of the techniques that has found success in the accurate characterization of thin oxynitride films. This work investigated the artifacts in a typical depth profile analysis of nitrogen with the current SIMS technique and the ways to improve the accuracy by selecting optimal analytical conditions. It was demonstrated that surface roughness developed rapidly in a SiO₂/Si stack when it was bombarded with an O₂⁺ beam at 250 eV and angle of incidence from 70 to 79° . The roughness caused distortion in the measured depth profiles of nitrogen and the major component elements. However, the above roughness and the distortion in the depth profiles can be eliminated by using a 250 eV O₂⁺ beam at an angle of incidence above 80° . Depth profile analyses with a 250 eV 83° O₂⁺ beam exhibited minimal surface roughening and insignificant variation in the secondary ion yield of SiN^? from SiO₂ bulk to the SiO₂/Si interface, facilitating an accurate analysis of nitrogen distribution in a SiO₂/Si stack. In addition, depth profiles of the major component elements such as ¹⁸O^? and ²⁸Si^? delivered clear information on the location of the SiO₂/Si interface. Using the new approach, we compared nitrogen distribution in thin SiNO films with the decoupled‐plasma nitridation (DPN) at various powers. Copyright © 2008 John Wiley & Sons, Ltd.     

Preferential sputtering observed in Auger electron spectroscopy sputter depth profiling of AlAs/GaAs superlattice using low‐energy ions

Auger electron spectroscopy (AES) sputter depth profiling of an ISO reference material of the GaAs/AlAs superlattice was investigated using low‐energy Ar⁺ ions. Although a high depth resolution of ～1.0 nm was obtained at the GaAs/AlAs interface under 100 eV Ar⁺ ion irradiation, deterioration of the depth resolution was observed at the AlAs/GaAs interface. The Auger peak profile revealed that the enrichment of Al due to preferential sputtering occurred during sputter etching of the AlAs layer only under 100 eV Ar⁺ ion irradiation. In addition, a significant difference in the etching rates between the AlAs and GaAs layers was observed for low‐energy ion irradiation. Deterioration of the depth resolution under 100 eV Ar⁺ ion irradiation is attributed to the preferential sputtering and the difference in the etching rate. The present results suggest that the effects induced by the preferential sputtering and the significant difference in the etching rate should be taken into account to optimize ion etching conditions using the GaAs/AlAs reference material under low‐energy ion irradiation. Copyright © 2005 John Wiley & Sons, Ltd.     

Characteristic Fragmentation of Polysiloxane Monolayer Films by Bombardment with Monatomic and Polyatomic Primary Ions in TOF-SIMS

This study reports the characteristic fragmentation patterns from two polysiloxane polymers that form ordered overlayer on silver substrates. Results are compared for the bombardment of various monatomic and polyatomic projectiles of Cs⁺, C₆₀⁺ (10 keV), Bi₁⁺, and Bi₃⁺ (25 keV) in the high mass range time-of-flight secondary ion mass spectrometry (TOF-SIMS) spectra. Results are reported from sub-monolayer (solution cast) coverages of poly(dimethylsiloxane)s with the number average molecular weights (M_n) of 2200 and 6140 Da, respectively, and Langmuir-Blodgett monolayers of poly(methylphenylsiloxane) with molecular weights (MW) from 600 and 1000 Da. For each film, Bi projectiles resulted in the emission of positive silver cluster ions from the substrate under the polymer overlayer and peaks corresponding to silver cluster ions with larger mass were observed by impact of polyatomic 25 keV Bi₃⁺ projectiles. In addition, depending on the change of energy of Bi₃⁺, a different pattern of fragments was observed. With Cs⁺ and C₆₀⁺ impact, however, the emission of silver cluster ions was not detected. In the case of C₆₀⁺ impact for PDMS-6140, peaks corresponding to silver-cationized intact oligomers were not observed. In this paper, these results are explained by the possible bombardment mechanism for each projectile, based on its mass, energy, and split trajectories of the component atoms under the polyatomic impact.     

VAMAS interlaboratory study on organic depth profiling

We present the results of a VAMAS (Versailles project on Advanced Materials and Standards) interlaboratory study on organic depth profiling, in which twenty laboratories submitted data from a multilayer organic reference material. Individual layers were identified using a range of different sputtering species (C₆₀ⁿ⁺, Cs⁺, SF₅⁺ and Xe⁺), but in this study only the C₆₀ⁿ⁺ ions were able to provide truly ‘molecular’ depth profiles from the reference samples. The repeatability of profiles carried out on three separate days by participants was shown to be excellent, with a number of laboratories obtaining better than 5% RSD (relative standard deviation) in depth resolution and sputtering yield, and better than 10% RSD in relative secondary ion intensities. Comparability between laboratories was also good in terms of depth resolution and sputtering yield, allowing useful relationships to be found between ion energy, sputtering yield and depth resolution. The study has shown that organic depth profiling results can, with care, be compared on a day‐to‐day basis and between laboratories. The study has also validated three approaches that significantly improve the quality of organic depth profiling: sample cooling, sample rotation and grazing angles of ion incidence. © Crown copyright 2010.     

Simultaneous SIMS/AES Measurements for the Characterization of Multilayer Systems

The interface region of silicon dioxide layers deposited on indium phosphide was investigated by simultaneous secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) depth profile measurements. The results of such measurements depend strongly on the ion species used for sputtering. With Ar⁺ primary ions an enhancement of the P- and In-SIMS signals occurs in the mixing zone at the interface. This effect can be explained by an increase of the ionization yield of In and P in the presence of oxygen from the SiO₂. The use of O₂ ⁺ as sputter ions enlarges the phosphorus peak at the interface while the enhancement of the In-signal diminishes. The simultaneously measured AES spectra give clear evidence of oxygen bonded In and P at the interface. Additionally, preferential sputtering of phosphorus occurs. The understanding of these effects which complicate the interpretation of SIMS and AES depth profile measurements of the system SiO₂/InP allows us to investigate the silicon dioxide layers and the interface region in order to optimize the SiO₂ deposition process, e.g. for surface passivation or MIS structures.     

Chemical etching of hot‐pressed p‐type polycrystalline SiC surfaces by HF/K2S2O8 solutions

In this work, an experimental study on the etching of p‐type hot‐pressed silicon carbide (SiC) was carried out in HF/K₂S₂O₈ solutions. The SiC wafers used in this work were p‐type polycrystalline materials, supplied by Goodfellow, with an acceptor concentration of 2.31 × 10¹² cm^?3. The SiC substrate was a hot‐pressed material, the latter realized from a mixture of 1 part of SiO₂ with 3 parts of C (carbon) ‘1SiO₂ + 3C’ heated in an oven at 2500 °C. In order to facilitate the chemical etching of the SiC substrate, a thin aluminium film was deposited on the SiC substrate. The morphology of the etched surface was examined with varying K₂S₂O₈ concentration. The surfaces of the etched samples were analysed using secondary ions mass spectrometry (SIMS), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT‐IR) and photoluminescence (PL). The surface morphology of the samples etched in HF/K₂S₂O₈ is shown to depend on the solution composition. The investigation of the effect of the HF/K₂S₂O₈ solution on SiC samples shows that as K₂S₂O₈ concentration increases, the chemical etching reveals defects with random geometry. Finally, chemical etching of p‐type SiC induces a decrease in the PL intensity, which indicates clearly the defects on the polycrystalline SiC surface. In addition, the result is very interesting, as to date no chemical etching solution at low temperature (<100 °C) has been developed for SiC. Finally, we have proposed a dissolution mechanism of SiC in 2HF/1K₂S₂O₈ solutions. Copyright © 2007 John Wiley & Sons, Ltd.     

SIMS depth profiling of semiconductor interfaces: Experimental study of depth resolution function

Reconstruction of original element distribution at semiconductor interfaces using experimental SIMS profiles encounters considerable difficulties because of the matrix effect, sputtering rate change at the interface, and also a sputtering‐induced broadening of original distributions. We performed a detailed depth profiling analysis of the Al step‐function distribution in GaAs/Al_xGa_1?xAs heterostructures by using Cs⁺ primary ion beam sputtering and CsM⁺ cluster ion monitoring (where M is the element of interest) to suppress the matrix effect. The experimental Depth Resolution Function (DRF) was obtained by differentiation of the Al step‐function profile and compared with the ‘reference’ DRF found from depth profiling of an Al delta layer. The difference between two experimental DRFs was explained by the sputtering rate change during the interface profiling. We experimentally studied the sputtering rate dependence on the Al_xGa_1?xAs layer composition and applied it for a reconstruction of the DRF found by differentiating the Al step‐function distribution: the ‘reconstructed’ and ‘reference’ DRFs were found to be in good agreement. This confirmed the correctness of the treatment elaborated. Copyright © 2010 John Wiley & Sons, Ltd.     

New horizons in sputter depth profiling inorganics with giant gas cluster sources: Niobium oxide thin films

X‐ray photoelectron spectroscopy is used to study a wide variety of material systems as a function of depth (“depth profiling”). Historically, Ar⁺ has been the primary ion of choice, but even at low kinetic energies, Ar⁺ ion beams can damage materials by creating, for example, nonstoichiometric oxides. Here, we show that the depth profiles of inorganic oxides can be greatly improved using Ar giant gas cluster beams. For NbO_x thin films, we demonstrate that using Ar_x⁺ (x = 1000‐2500) gas cluster beams with kinetic energies per projectile atom from 5 to 20 eV, there is significantly less preferential oxygen sputtering than 500 eV Ar⁺ sputtering leading to improvements in the measured steady state O/Nb ratio. However, there is significant sputter‐induced sample roughness. Depending on the experimental conditions, the surface roughness is up to 20× that of the initial NbO_x surface. In general, higher kinetic energies per rojectile atom (E/n) lead to higher sputter yields (Y/n) and less sputter‐induced roughness and consequently better quality depth profiles. We demonstrate that the best‐quality depth profiles are obtained by increasing the sample temperature; the chemical damage and the crater rms roughness is reduced. The best experimental conditions for depth profiling were found to be using a 20 keV Ar₂₅₀₀⁺ primary ion beam at a sample temperature of 44°C. At this temperature, there is no, or very little, reduction of the niobium oxide layer and the crater rms roughness is close to that of the original surface.     

In situ XPS and SIMS analysis of O2+ beam‐induced silicon oxidation

The chemical composition variation of silicon under 4 keV O₂⁺ ion beam bombardment at different incident angles was studied by in situ small‐area XPS. The changes in secondary ion profile (³⁰Si⁺, ⁴⁴SiO⁺, ⁵⁶Si₂⁺, ⁶⁰SiO₂⁺) during oxygen ion beam bombardment also have been monitored. We present a direct correlation of the changes in secondary ion depth profile with surface composition during sputtering. Evolution of the secondary ion profile obtained from SIMS shows similar trends with variation of oxygen concentration in the crater surface measured by XPS. It is shown that when the oxygen ion beam incidence angle is < 40° silicon dioxide is the dominant species on the crater surface and the matrix ion species ratio (MISR) value for ⁴⁴SiO⁺/⁵⁶Si₂⁺ is higher than for ³⁰Si⁺/⁵⁶Si₂⁺. For incidence angles of >40°, the formation of sub‐oxide is favoured and thus the MISR value for ⁴⁴SiO⁺/⁵⁶Si₂⁺ is lower than for ³⁰Si⁺/⁵⁶Si₂. At 40° bombardment there are similar amounts of SiO₂ and sub‐oxides present on the crater surface and the MISR values for ⁴⁴SiO⁺/⁵⁶Si₂⁺ and ³⁰Si⁺/⁵⁶Si₂⁺ are also similar. Copyright © 2004 John Wiley & Sons, Ltd.     

Lead-Free,Water-Stable A3Bi2I9 Perovskites: Crystal Growth and Blue-Emitting Quantum Dots [A=CH3NH3+, Cs+, and (Rb0.05Cs2.95)+]

Despite the great success in the increase in the power conversion efficiency of lead halide perovskite solar cells, the toxicity of lead and the unstable nature of the materials are still major concerns for their wider implementation at the industrial level. Herein, large-size single crystals (SCs) are developed in HI solution by using a temperature lowering method and nanocrystals (NCs) of A₃Bi₂I₉ perovskites [where A=CH₃NH₃⁺ (MA)⁺, Cs⁺, and (Rb_0.05Cs_2.95)⁺] are formed in ethanol (EtOH) and toluene (TOL). The stability of A₃Bi₂I₉ perovskite is investigated by immersing the SCs for 24 h and pellets for 12 h in water. Moreover, the A₃Bi₂I₉ perovskite NCs displays a promising photoluminescence quantum yield of 17.63 % and a long lifetime of 8.20 ns.     

X‐ray photoelectron spectroscopy depth analysis of metal oxides by electrospray droplet impact

The electrospray droplet impact (EDI) method is a newly developed etching method using extremely large charged water cluster ions with masses of several 10⁶ u. This work presents a comparative XPS study of chemical states of the transition metal oxides, TiO₂ and Ta₂O₅, etched by Ar⁺ and EDI. Selective sputtering of oxygen was observed by Ar⁺ etching for these samples, but no chemical modification took place by EDI. This finding provided further evidence that EDI has the capability of nonselective etching for both inorganic and organic materials. Copyright © 2011 John Wiley & Sons, Ltd.     

Bi3+-Er3+ and Bi3+-Yb3+ Codoped Cs2AgInCl6 Double Perovskite Near-Infrared Emitters

Bi³⁺ and lanthanide ions have been codoped in metal oxides as optical sensitizers and emitters. But such codoping is not known in typical semiconductors such as Si, GaAs, and CdSe. Metal halide perovskite with coordination number 6 provides an opportunity to codope Bi³⁺ and lanthanide ions. Codoping of Bi³⁺ and Ln³⁺ (Ln=Er and Yb) in Cs₂AgInCl₆ double perovskite is presented. Bi³⁺-Er³⁺ codoped Cs₂AgInCl₆ shows Er³⁺ f-electron emission at 1540 nm (suitable for low-loss optical communication). Bi³⁺ codoping decreases the excitation (absorption) energy, such that the samples can be excited with ca. 370 nm light. At that excitation, Bi³⁺-Er³⁺ codoped Cs₂AgInCl₆ shows ca. 45 times higher emission intensity compared to the Er³⁺ doped Cs₂AgInCl₆. Similar results are also observed in Bi³⁺-Yb³⁺ codoped sample emitting at 994 nm. A combination of temperature-dependent (5.7 K to 423 K) photoluminescence and calculations is used to understand the optical sensitization and emission processes.     

Bi3+‐Er3+ and Bi3+‐Yb3+ Codoped Cs2AgInCl6 Double Perovskite Near‐Infrared Emitters

Bi³⁺ and lanthanide ions have been codoped in metal oxides as optical sensitizers and emitters. But such codoping is not known in typical semiconductors such as Si, GaAs, and CdSe. Metal halide perovskite with coordination number 6 provides an opportunity to codope Bi³⁺ and lanthanide ions. Codoping of Bi³⁺ and Ln³⁺ (Ln=Er and Yb) in Cs₂AgInCl₆ double perovskite is presented. Bi³⁺‐Er³⁺ codoped Cs₂AgInCl₆ shows Er³⁺ f‐electron emission at 1540 nm (suitable for low‐loss optical communication). Bi³⁺ codoping decreases the excitation (absorption) energy, such that the samples can be excited with ca. 370 nm light. At that excitation, Bi³⁺‐Er³⁺ codoped Cs₂AgInCl₆ shows ca. 45 times higher emission intensity compared to the Er³⁺ doped Cs₂AgInCl₆. Similar results are also observed in Bi³⁺‐Yb³⁺ codoped sample emitting at 994 nm. A combination of temperature‐dependent (5.7 K to 423 K) photoluminescence and calculations is used to understand the optical sensitization and emission processes.     

Sorption of cesium ions by nanostructured calcium aluminosilicates

Data on the sorption properties of synthetic calcium aluminosilicates (CASes) with Al: Si ratios of 2: 2, 2: 6, and 2: 10, fabricated within the multicomponent system CaCl₂–AlCl₃–KОН–SiO₂–H₂O, are presented. Isotherms of the sorption of Cs⁺ ions from aqueous solutions with Cs⁺ concentrations of 0.2 to 6.0 mmol L^–1 are analyzed. The CAS maximum sorption capacity and the Langmuir constants are determined. Kinetic data are obtained, and the energy of cation-exchange activation upon the sorption of Cs⁺ ions is determined. The effect of a salt background (1% KCl + 6% NaCl) has on the values of distribution coefficient (K_d) and the degree of Cs⁺ ion removal is established.     

Ex-situ XPS-investigation of the interface between PE-CVD SiO2 and wet chemically etched MO-CVD epitaxial layers of In0.53Ga0.47As

The As rich SiO₂/In_0.53Ga_0.47As interface which is produced by wet chemical etching before SiO₂ deposition to improve the electronic properties of the interface has been studied. SiO₂-layers of about 10 to 20 nm thickness have been deposited in a plasma enhanced chemical vapour deposition (PECVD) reactor and then thinned down to about 4 to 3 nm by 1.5 keV Ar ion beam bombardment at grazing incidence (85°) in the XPS analysis chamber. The photoelectron spectra show that an additional broadening of the In and As lines due to a possible ion beam damage can be neglected in case of a qualitative interpretation of the interface spectra. Moreover, TRIM simulations of the collision cascade reveal low damage production in the SiO₂/In_0.53Ga_0.47As interface region. Therefore such ex-situ XPS experiments allow a supervision of the interface chemistry after the fabrication process and an optimisation of the technology with regard to the etching solution and deposition conditions. The conservation or removal of the elemental arsenic and the oxidation of the semiconductor due to the SiO₂ deposition are well reflected in the photoelectron spectra.     

Ex-situ XPS-investigation of the interface between PE-CVD SiO2 and wet chemically etched MO-CVD epitaxial layers of In0.53Ga0.47As

The As rich SiO₂/In_0.53Ga_0.47As interface which is produced by wet chemical etching before SiO₂ deposition to improve the electronic properties of the interface has been studied. SiO₂-layers of about 10 to 20 nm thickness have been deposited in a plasma enhanced chemical vapour deposition (PECVD) reactor and then thinned down to about 4 to 3 nm by 1.5 keV Ar ion beam bombardment at grazing incidence (85°) in the XPS analysis chamber. The photoelectron spectra show that an additional broadening of the In and As lines due to a possible ion beam damage can be neglected in case of a qualitative interpretation of the interface spectra. Moreover, TRIM simulations of the collision cascade reveal low damage production in the SiO₂/In_0.53Ga_0.47As interface region. Therefore such ex-situ XPS experiments allow a supervision of the interface chemistry after the fabrication process and an optimisation of the technology with regard to the etching solution and deposition conditions. The conservation or removal of the elemental arsenic and the oxidation of the semiconductor due to the SiO₂ deposition are well reflected in the photoelectron spectra.