硅团簇结构和碎片行为的紧束缚理论方法

利用紧束缚分子动力学模拟退火方法研究了硅团簇Sin(n=2—14)的结构性质和能量.通过与前人工作结果(Si2—Si10)的比较,发现本理论方法的结果相当准确地再现了从头计算的结论.对较大的硅团簇所作的计算给出了有意义的结构预测.从能量观点出发,计算结果表明原子数分别为4,6,7,10,12和14的硅团簇较为稳定.还进一步研究了硅团簇的碎片行为,理论计算的结果表明较大的硅团簇的稳定碎片产物通常包括一个或两个“幻数”团簇     

几何构型不同的Na团簇碰撞动力学研究

采用距离相关紧密束缚的分子动力学模型,在不同碰撞能量以及不同的碰撞参数下,研究了两种构型的Na6(2D),Na6(3D)与Na8团簇间的碰撞.讨论了反应机制的变化,即全融合、深度非弹、非弹性碰撞过程.结果表明:构型不同的团簇与相同的靶碰撞显示了不同的特征.低能时Na6(3D)易融合;DIC反应时,易于形成大的团簇 关键词： Na团簇 原子团簇碰撞 紧束缚模型     

C2团簇在金刚石(111)表面吸附结构的分子动力学模拟

利用Brenner(#2)半经验多体相互作用势和分子动力学模拟方法研究荷能的C₂在金刚石(111)表面的化学吸附过程.模拟300 K时,初始入射动能分别为1,20,30 eV的C₂团簇从6个不同位置轰击金刚石(111)表面,观察到C₂团簇在金刚石(111)表面形成的吸附结构,表面C原子键的打开以及C₂团簇与表面C原子成键等物理过程,并讨论不同入射位置和入射能量对沉积团簇的结构特性的影响.结果表明,对于表面不同的局部构型,C₂团簇发生不同的碰撞过程,C₂团簇入射能量的提高有利于成键过程的发生,从原子尺度模拟沉积机制.     

银纳米团簇负热容现象的分子动力学模拟

采用分子动力学方法和嵌入原子法(EAM)多体势函数,模拟研究了银纳米团簇在不同温度直到熔化过程中的结构变化,得到了体系能量和热容量随温度的变化关系.结果显示:银纳米团簇在临近熔点附近出现了负热容现象.研究了弛豫后银纳米团簇的稳态结构变化及其在不同时刻结构的演变过程.结果表明:产生负热容现象的主要原因是纳米团簇在熔点附近,结构发生了巨大的变化,形成由{111}和{100}面围成的结构十分稳定和能量更低的多面体.     

Si团簇的结构特性研究

采用由 M.Menon等人的非正交紧束缚模型,结合遗传算法和分子动力学方法,对n=2～20的中小尺寸Si团簇的结构进行了优化,计算了束缚能Eb、平均配位数CN,团簇的裂化能Efrag,总能的二阶差分Δ2E,最高占据分子轨道(HOMO)和最低未占据分子轨道(LUMO)的能隙Eg, 结合Mullikon集居数分析研究了电子特性,得出了随着团簇尺寸的增加,团簇的构型发生了近球形-长椭球形-近球形的转变、n=4,7,10等团簇具有较强稳定性、团簇中原子之间共价键性结合占支配地位等主要结论.所得的主要结论与已有的从头计算和实验结果相一致.     

硅团簇的结构及生长模式——紧束缚分子动力学：Si11—Si32

采用紧束缚分子动力学模拟硅团簇的结构，通过比较它们的结合能来确定基态结构，最后描绘出不同尺寸所对应的径向分布函数、角分布函数.模拟表明硅团簇在n=27处发生结构转变，从结构图上看，是由扁长结构向近球形结构转变.从径向分布函数图像、键角分布函数图像上也可以得到团簇结构在n=27处发生了变化，结构变得越来越紧密. 关键词： 硅团簇 紧束缚分子动力学 模拟退火 基态结构     

PSP—SA模拟金团簇的几何结构与基态能量

采用基于模拟退火的粒子群智能算法(PSO-SA)和紧束缚二阶动量矩势函数(TB-SMA)对金团簇Aun(n≤10)的基态能量、结构及其随团簇尺寸变化的规律进行了研究.结果表明n为偶数的金团簇的结构比邻近为奇数的金团簇稳定,具有"奇-偶"振荡效应;由金团簇基态能量的二阶差分可以看出Au4、Au6、Au8结构比较稳定,具有"幻数"效应.     

Morse团簇M_n(n=2-100)基态结构特性的模拟淬火算法研究

本文基于Morse两体势函数采用微正则系综分子动力学模拟淬火方法求解了Morse团簇M_n(n=2-100)的基态几何结构和能量.计算结果准确重复了剑桥数据库中已给出的M_n(n=5-80)团簇的最低能量值,体现出基于微正则系综的分子动力学模拟淬火方法在寻找团簇基态结构上的有效性.通过分析Morse团簇的平均束缚能、二阶差分能和一阶差分能、平均最近邻原子间距及平均配位数,得到n=13,19,23,26,39,46,55,71为团簇幻数数列,发现相较平均配位数的影响、团簇平均最近邻原子间距对Morse团簇基态结构的稳定性基本不产生作用.     

团簇红外吸收谱的理论研究

根据时间关联函数理论，可以结合分子动力学模拟而计算团簇的红外吸收谱. 应用正交紧束缚分子动力学模拟，计算了C₆₀的红外吸收谱. 结果与实验相符，足以识别团簇 体系的红外吸收谱. 这将是研究纳米团簇体系的有力理论分析工具. 关键词： 红外吸收谱 团簇 时间关联函数     

Morse团簇Mn（n=2-100）基态结构特性的模拟淬火算法研究

本文基于Morse两体势函数采用微正则系综分子动力学模拟淬火方法求解了Morse团簇Mn（n=2~100）的基态几何结构和能量．计算结果准确重复了剑桥数据库中已给出的Mn(n=5~80)团簇的最低能量值,体现出基于微正则系综的分子动力学模拟淬火方法在寻找团簇基态结构上的有效性．通过分析Morse团簇的平均束缚能、二阶差分能和一阶差分能、平均最近邻原子间距及平均配位数,得到n=13,19,23,26,39,46,55,71为团簇幻数数列,发现相较平均配位数的影响、团簇平均最近邻原子间距对Morse团簇基态结构的稳定性基本不产生作用．     

Cluster model approach for electronic structure of Si and Ge(111) and GaAs(110) surfaces

For the purpose of exploring how realistic a cluster model can be for semiconductor surfaces, extended Huckel theory calculations are performed on clusters modeling Si and Ge(111) and GaAs(110) surfaces as prototypes. Boundary conditions of the clusters are devised to be reduced. The ideal, relaxed, and reconstructed Si and Ge(111) surfaces are dealt with. Hydrogen chemisorbed (111) clusters of Si and Ge are also investigated as prototypes of chemisorption systems. Some comparison of the results with finite slab calculations and experiments is presented. The cluster-size dependence of the calculated energy levels, local densities of states, and charge distributions is examined for Si and Ge(111) clusters. It is found that a 45-atom cluster which has seven layers along the [111] direction is large enough to identify basic surface states and study the hydrogen chemisorption on Si and Ge(111) surfaces. Also, it is presented that surface states on the clean Si and Ge(111) clusters exist independent of relaxation. Further, the calculation for the relaxed GaAs(110) cluster gives the empty and filled dangling-orbital surface states comparable to experimental data and results of finite slab calculations. The cluster approach is concluded to be a highly useful and economical one for semiconductor surface problems.     

Magnetic properties of Co films grown on the modified Si(111) surface

The magnetic properties and domain structure of epitaxial Co films grown on a modified Si(111) surface were studied. First, the processes of growth of copper silicide nanostructures on the Si(111) surface were investigated. Copper silicide clusters were formed on the Si(111)-5.55 × 5.55-Cu surface at a substrate temperature of ～550°C. It was established that the nanostructures formed have a perfect faceting, and the lateral edges and long wire side are oriented along the Si〈110〉 crystallographic directions. Then, Co films were deposited on the formed structures. The investigation of the coercive force and reduced remanent magnetization showed that the Co(111) films have the sixth-order crystalline anisotropy. It was found that the coercive force of the Co films deposited on the Cu buffer layer is approximately six times less than that of the Co films deposited on the Si(111)-5.55 × 5.55-Cu surface and Si(111)?5.55 × 5.55-Cu/(Cu-Si) cluster surface.     

Investigations of C60 molecules deposited on Si(111) by noncontact atomic force microscopy

We demonstrated the high resolution imaging of the organic molecules using noncontact atomic force microscopy in ultrahigh vacuum. The sample was C₆₀ molecules deposited on the Si(111)-7×7 reconstructed surface. When the thickness of the C₆₀ film was submonolayer, we could image some isolated C₆₀ molecules and the reconstructed Si surface simultaneously. However, the imaging was highly unstable not only because of the large structure but also due to the large difference between the interaction forces on the molecules and on the Si surface. On the other hand, when the thickness of the C₆₀ molecules was almost monolayer, individual molecules could be stably imaged.     

Effect of NH3 adsorption on the atomic structure of Si(111) √3 × √3 - Al and Si(111) √3 × √3 - Ag surfaces

The room temperature (RT) adsorption of ammonia (NH₃) on Si(111)√3 × √3-Al and Si(111)√3 × √3-Ag surfaces has been studied using LEED and AES. The transformation from Si(111)√3 × √3-Al surface structure to Si(111)1 × 1-(Al, H) upon NH₃ exposure has been found to be similar to the previously observed structural transformation induced by exposure in the atomic hydrogen. It has been demonstrated that the transformation is caused by hydrogen atoms which are generated by NH₃ dissociation on the Si(111)√3 × √3-Al surface. It has been estimated that about 0.1 ML of ammonia molecules is needed to complete the structural transformation. No interaction of NH₃ with the Si(111)√3 × √3-Ag surface has been found. The dissociation of NH₃ molecules is believed to be impossible on this surface     

Ge在Si(111)7×7表面的选择性吸附

利用超高真空扫描隧道显微镜研究了室温条件下Ge在Si(111)7×7表面上初期吸附过程.在Ge所形成团簇中存在一个临界核.这些Ge团簇的吸附中心总是在三个增原子所围成的区域中.它们的电子结构具有类似半导体的性质,即其局域态密度在远离费米面的能级处很大,而在费米面附近的能级处非常小. 关键词： 扫描隧道显微镜 Si(111)7×7表面 Ge团簇     

C60分子在Si（111）-7×7表面分子束外延生长的STM研究

在超高真空中采用分子束外延(molecular beam epitaxial)技术进行C₆₀分子在硅（111）-7×7表面的生长,并利用扫描隧道显微镜进行原位研究.室温下,相对于无层错半胞（unfaulted half unit cell）,C₆₀更易于吸附在有层错半胞（faulted half unit cell）.表面台阶处的电子悬挂键密度最高,通过控制温度和时间进行退火处理后,C₆₀分子会向着台阶的方向扩散并聚集.测量分子在不同吸附位 关键词： 60分子')" href="#">C₆₀分子 分子束外延 Si(111)-7×7 超高真空扫描隧道显微镜     

Adsorption and thermal decomposition of C60 on Co/Si(111)-7 × 7

We present a study on the adsorption and thermal decomposition of C₆₀ on Co covered Si(111)-7 × 7 using scanning tunneling microscopy and X-ray photoelectron spectroscopy. Co-induced magic clusters grown on Si(111)-7 × 7 are identified as a possible adsorption site where 51 ± 3% of C₆₀ molecules adsorb at room temperature. On Co/Si(111)-7 × 7, C₆₀ molecules start to decompose at 450 °C, and are completely dissociated to form SiC by 720 °C. This temperature is significantly lower than 910 °C at which C₆₀ completely dissociates on clean Si(111)-7 × 7. This is a possible low temperature method for growing crystalline SiC films using C₆₀ as a precursor molecule.     

Comparison between Si(100) and Si(111) in the reaction with oxygen at high temperatures

In this Letter, both the dynamics and kinetics of the reaction of oxygen molecules on Si(100)p2 × 1 and Si(111)7 × 7 and 1× 1 surfaces are compared. In all three cases, two distinct adsorption channels were observed. For oxygen molecules with translational energies less than 0.08 eV, the initial sticking is not sensitive to the energy or the angle of incidence, but displays a high sensitivity to the surface structure. At higher energies, a second channel becomes effective. The initial sticking coefficient increases rapidly and scales with the normal component of the translational energy, but the dependence on surface structure is greatly diminished. The kinetics of SiO formation are qualitatively similar on all surfaces with slightly higher rates on Si(111).     

Si_3N_4/Si表面Si生长过程的扫描隧道显微镜研究

利用原位扫描隧道显微镜和低能电子衍射分析了Si的纳米颗粒在Si3N4 /Si(111)和Si3N4 /Si(10 0 )表面生长过程的结构演变 .在生长早期T为 35 0— 10 75K范围内 ,Si在两种衬底表面上都形成高密度的三维纳米团簇 ,这些团簇的大小均在几个纳米范围内 ,并且在高温退火时保持相当稳定的形状而不相互融合 .当生长继续时 ,Si的晶体小面开始显现 .在晶态的Si3N4 (0 0 0 1) /Si(111)表面 ,Si的 (111)小面生长比其他方向优先 ,生长方向与衬底Si(111)方向一致 .最后在大范围内形成以 (111)为主的晶面 .相反 ,在非晶的Si3N4 表面 ,即Si3N4 /Si(10 0 ) ,Si晶体的生长呈现完全随机的方向性 ,低指数面如 (111)和 (10 0 )面共存 ,但它们并不占据主导地位 ,大部分暴露的小面是高指数面如 (113)面 .对表面生长过程进行了探讨并给出了合理的物理解释     

States of water molecule adsorbed on Si(111) surface

Calculated electronic energy structure of an overlayer of water molecules chemisorbed on Si(111), with a molecular plane perpendicular to the surface, reveals that 3a₁ molecular state is removed upon adsorption, and the resulting state densities cannot be reconciled with the UPS spectrum. These results, and state densities obtained from different atomic configurations are interpreted to rule out the molecular adsorption on Si(111) surface at room temperature.