Influence of Na-related defects on ArF laser absorption in CaF2

ArF laser pulse transmission through commercial high purity CaF₂ is determined by measuring the energy of each pulse before and behind the sample up to an incident fluence H of 10 mJ/cm². The steady state transmission of ArF laser pulses decreases with increasing fluence. The related absorption coefficients α ^st(H) are proportional to H and rationalized by effective 1- and 2-photon absorption coefficients 2.4×10^?4 cm^?1≤α ^eff≤16.8×10^?4 cm^?1 and 1.7×10^?9 cm?W^?1≤β ^eff≤9.3×10^?9 cm?W^?1, respectively. The α ^eff and β ^eff values increase with the Na content of the CaF₂ samples as identified by the fluorescence of Na-related M _Na centers at 740 nm. This relation is simulated by a rate equation model describing the ArF laser induced M _Na generation in the dark periods between the laser pulses and their annealing during laser irradiation. M _Na generation starts with intrinsic 2-photon absorption in CaF₂, yielding self-trapped excitons (STE). These pairs of F and H centers move upon thermal activation and the F centers combine with F _Na to form M _Na centers. M _Na annealing occurs by its photo dissociation into a pair of F and F _Na centers.     

Filamentation and modulational instabilities of laser radiation in magnetoactive piezoelectric semiconductors

Following the fluid model for the nonlinear response of electrons, a theoretical investigation has been made on the filamentation and modulational instabilities of high power laser radiation in magnetoactive piezoelectric semiconductors. The ponderomotive force on electrons is responsible for the parametric amplification of the low frequency electrostatic perturbation which may cause the filamentation or modulational instability of the incident laser beam depending upon the direction of propagation of the perturbation. For typical parameters in n-InSb: ?_L = 16 at 77°K, ω_p = 10¹³radsec^?1, v₀ = 10¹¹radsec^?1,K² = 10^?3, ω_c = 10¹²radsec^?1,k = 5 × 10²cm^?1, and when the power density of the 10.6 microm CO₂ laser is 2.37 MW cm^?2 ($\text{|?}{}_{\mathrm{0x}}\text{C| = 10}{}^{\mathrm{?3}}$), the growth rate of the filamentation instability is ~ 10⁴ rad sec^?1 and the growth rate of the modulational instability is ~ 10³ rad sec^?1. It is observed that the external static magnetic field decreases the growth rate of the filamentation instability, whereas it has insignificant effect on the modulational instability of laser beams in piezoelectric semiconductors.     

Energy Transfer Studies with Perylene bis-Diimide Derivatives

Abstract

Singlet energy transfer between seven derivatives of perylene diimides and cobalt ions are studied. Energy transfer quenching by cobalt ions is observed for all of the perylene diimides. The rate of bimolecular quenching is found to be about, k_q ? 10¹⁰ M^?1s^?1, only the N-naphthyl substitution lowered the rates to the range of, k_q ? 10⁹ M^?1s^?1. The critical transfer distances, R_o (5.8–10.4 A°), calculated from donor emission and acceptor absorption spectra, are attributed to a Forster resonance energy transfer process.     

Intermolecular energy transfer in mixed laser dyes: photophysical properties of triplet states

Triplet-singlet energy transfer in laser dyes have been studied in EPA at 77K using N₂ laser as an excitation source. Phosphorescence of the donor (D) and the delayed fluorescence of the acceptor (A) and their lifetimes have been measured for coumarin 102 (D)-rhodamine B(A) and 9(10H)-acridone (D)-rhodamine 6G(A) dye systems as a function of acceptor concentration. These data yield energy transfer rate constants of ∼10³ dm³ mol⁻¹ s⁻¹ for the donor acceptor combinations, consistent with the Forster mechanism. The phosphorescence quantum efficiency and other spectral parameters are also reported.     

Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers

Optical spectra and electrical conductivity of silicon-doped epitaxial gallium nitride layers with uncompensated donor concentrations N _D — N _A up to 4.8 × 10¹⁹ cm^?3 at T ≈ 5 K have been studied. As follows from the current-voltage characteristics, at a doping level of ～3 × 10¹⁸ cm^?3 an impurity band is formed and an increase of donor concentration by one more order of magnitude leads to the merging of the impurity band with the conduction band. The transformation of exciton reflection spectra suggests that the formation of the impurity band triggers effective exciton screening at low temperatures. In a sample with N _D — N _A = 3.4 × 10¹⁸ cm^?3, luminescence spectra are still produced by radiation of free and bound excitons. In a sample with N _D — N _A = 4.8 × 10¹⁹ cm^?3, Coulomb interaction is already completely suppressed, with the luminescence spectrum consisting of bands deriving from impurity-band-valence band and conduction-band-valence band radiative transitions.     

Optimization of soft x-ray line emission from laser-produced carbon plasma with laser intensity

Absolute measurement for He-α resonance (1s^{2 1}S₀?1s2p¹ P ₁, at 40.2 Å) line emission from a laser-produced carbon plasma has been studied as a function of laser intensity. The optimum laser intensity is found to be ≈1.3×10¹² W/cm² for the maximum emission of 3.2 × 10¹³ photons sr^?1 pulse^?1. Since this line lies in the water window spectral region, it has potential application in x-ray microscopic imaging of biological sample in wet condition. Theoretical calculation using corona model for the emission of this line is also carried out with appropriate ionization and radiative recombination rate coefficients     

Lifetime measurement in the β system (c1Φ-a1Δ) of TiO

The radiative lifetime of the v′ = 0 level of the c¹Φ state of TiO has been measured from observations on fluorescent decay of a single rotational level, following excitation by laser radiation. The value is τ₀ = 17.5 ± 1.0 nsec. From this is derived a transition probability of 5.71 × 10⁷ sec^?1 and an emission f value of 0.270. Transition probabilities for the other bands in the β system have been calculated.     

An evaluation of molecular constants and transition probabilities for the NH free radical

Intense NH electronic emission spectra have been obtained from the low-density plume of an argon arc-jet ammonia introduced around the periphery. These spectra have been compared with spectra calculated by use of an IBM 360/50 computer from molecular constants, and the results of the computer comparison leading to a list of preferred molecular constants are included. Intensity measurements on emission spectra have yielded several previously unknown electronic-vibrational transition probabilities for different NH band systems. The electronic vibrational transition probabilities available from the literature are also included with an evaluation of the overlap of other band systems which apparently neglected in their original determination. The newly measured electronic-vibrational transition probabilities are as follows: A³Π → X³Σ^-A₀₁ = 1.30 × 10⁴sec^-1 A₁₀ = 0.5 × 10⁴ sec^-1 A₁₂ = 3.04 × 10⁴ sec^-1C¹Π → a¹δA₀₁ = 10.4 × 10⁴sec^-1C¹Π → b¹δ⁺A₀₀ = 7.45 × 10⁴sec^-1     

Tunable laser study of the ν10 + ν11 band of cyclopropane

Diode laser measurements of the ν₁₀ + ν₁₁ (l_tot = ±2) perpendicular band of cyclopropane have led to the assignments of roughly 600 lines in the 1880–1920-cm^?1 region. Most of the spectra were recorded and stored in digital form using a rapid-scan mode of operating the laser. These spectra were calibrated, with the aid of a computer, by reference to the R lines of the ν₁ + ν₂ band of N₂O. The ground state constants we obtained are (in cm^?1) B = 0.670240 ± 2.4 × 10^?5, D_J = (1.090 ± 0.054) × 10^?6, D_JK = (?1.29 ± 0.19) × 10^?6, D_K = (0.2 ± 1.1) × 10^?6. The excited state levels are perturbed at large J values, presumably by Coriolis couplings between the active E′(l_tot = ±2) and the inactive A′(l_tot = 0) states. Effective values for the excited state constants were obtained by considering only the J < 15 levels. The A₁-A₂ splittings in the K′ = 1 excited states were observed to vary as q_effJ(J + 1), with q_eff = (2.17 ± 0.17) × 10^?4 cm^?1.     

Infrared diode laser spectroscopy of the PO radical

Vibration-rotation transitions of the PO radical in the X²Π_r state have been observed by a tunable infrared diode laser spectrometer. The analysis of the observed spectra gave the molecular constants in the v = 1 state and the band origin to be B = 0.7250107(36), D = 1.0253(60) × 10^?4, A_J = 0.997(24) × 10^?4, p = 0.006323(33), A₁ - A₀ = 0.16354(78), and ν₀ = 1220.24901(43), all in cm^?1 units with three standard errors in parentheses, where the v = 0 parameters were fixed to the values previously reported. The equilibrium internuclear distance was determined to be $\text{r}{}_{\mathrm{<mtext>e</mtext>}}\text{= 1.476370(15)}\text{A}\text{?}$.     

Dy-doped Lu2SiO5 single crystal: spectroscopic characteristics and luminescence dynamics

Spectroscopic and kinetics properties of Lu₂SiO₅:Dy³⁺ (LSO:Dy) single crystal with 1 and 5 at.% of activator were investigated. The polarised absorption and unpolarised emission spectra were measured at 10–300 K. Parameters characterising radiative relaxations of LSO:Dy were estimated by the Judd–Ofelt model. The crystal-field energy structure was derived from low-temperature optical spectra exhibiting the presence of two non-equivalent Dy³⁺ sites. It was found that dysprosium ions in site 1 and in site 2 do not form isolated subsystems; these subsystems are coupled by an effective spectral energy migration process. The LSO:Dy crystal exhibits a strong luminescence in the visible. Strong ion–ion interactions were observed for LSO:Dy (5 at.%); luminescence decays are non-exponential and the macro-parameter of donor–acceptor interaction C _da amounts to 5.3 (10^?52 m⁶?s^?1) and 7.8 (10^?52 m⁶?s^?1) at 10 and 300 K, respectively. Laser potential related to the ⁴F_9/2→⁶H_13/2 yellow luminescence in Dy:LSO was assessed based on evaluation of the emission cross section values. It was concluded that the crystal is a promising material for visible laser operation.     

Superficial migration of tritium physisorbed on monocrystalline nickel (111)

The aim of this study is the measurement of superficial migration coefficient of tritium physisorbed on monocrystalline nickel without chemisorbed sublayer. The chosen crystalline orientation was (111) because it offers the greatest concentration of adsorption sites per square centimeter. A clean surface sample is obtained by mechanical polishing, chemical etching and finally ionic bombardment by high purity argon gas. The pressure in the experimental vessel is maintained below 10^?9 torr, by liquid helium cryopumping after zeolite sorption pumping.A little spot of adsorbed tritium is produced by introduction of a finite amount of tritium gas on the clean surface of the nickel sample through a stainless steel tube. Temperatures of nickel and of the gas introduction tube are respectively regulated at 5 K and 35 K. Tritium is used as a radioactive marker and its 10 keV β-radiation is measured by a channeltron type detector which permits the localization of the deposit without acting on the surface. We observed that tritium sorbed at 5 K is quite immobile (at the time scale of our experiment). After heating up to a fixed temperature T chosen between 10 K and 20 K, the deposite profile variation in function of time is observed to determine the superficial diffusion coefficient D. For the values of T from 13 K to 20 K, D varies from 10×10^?6 to 150×10^?6 cm² sec^?1. A diffusion activation energy of 200 cal mole^?1 is deduced from the exponential increase of the curve. A vibrational frequency can be evaluated to 3×10¹² sec^?1. The rate of desorption permits the evaluation of sorption energy at about 1800 cal mole^?1 in good agreement with usual results concerning physorption of H₂ on metals.     

Spectroscopic study of erbium-activated crystals of double calcium yttrium fluoride Ca<Subscript>0.89</Subscript>Y<Subscript>0.11</Subscript>F<Subscript>2.11</Subscript>:Er<Superscript>3+</Superscript>: I. Intensity of spectra and luminescence kinetics

Ca_0.89Y_0.11F_2.11:Er³⁺ (CYF:Er) crystals with an erbium content of 1–15 at % have been grown. The optical spectra and luminescence kinetics of CYF:Er crystals have been investigated at low (～5 K) and room temperatures. Based on an analysis of the absorption spectra at low temperature, the structure of Stark splitting of erbium levels in CYF:Er crystals is determined. Room-temperature absorption spectra are used to calculate the spectra of absorption cross sections and oscillator strengths of transitions from the erbium ground state to excited multiplets. It is shown that the absorption spectrum of CYF:Er crystals contains broad bands in the ranges of 790–815 and 965–980 nm, which correspond to the range of emission of laser diodes. For the band peaking near 967 nm, the peak absorption cross section is σ _abs ^max = 2.7 × 10^?21 cm². The intensity parameters are determined by the Judd-Ofelt method to be Ω₂ = 1.39 × 10^?20, Ω₄ = 1.34 × 10^?20, and Ω₆ = 2.24 × 10^?20 cm². The radiative transition probabilities, radiative lifetimes, and branching ratios are calculated with these values. The luminescence decay kinetics from excited erbium levels upon selective excitation is investigated and the experimental lifetimes of the 4F _9/2, ⁴ S _3/2, and ⁴ G _11/2 radiative erbium levels are determined. The dependences of multiphonon relaxation rates on the energy gap in CYF:Er crystals are obtained. The rates of nonradiative multiphonon relaxation from radiative erbium levels are determined.     

Spectroscopic study of thulium-activated double sodium yttrium fluoride Na<Subscript>0.4</Subscript>Y<Subscript>0.6</Subscript>F<Subscript>2.2</Subscript>:Tm<Superscript>3+</Superscript> crystals: I. Intensity of spectra and luminescence kinetics

Na_0.4Y_0.6F_2.2:Tm³⁺ crystals with a thulium content from 1 to 100 at % have been grown by the Stockbarger-Bridgman method. The optical spectra of Na_0.4Y_0.6F_2.2:Tm³⁺ crystals were investigated in detail at room and low (10 K) temperatures, and the luminescence kinetics was analyzed using different excitation methods. The structure of the Stark splitting of thulium levels as “quasi-centers,” characterized by inhomogeneous broadening of the Stark components, is determined from analysis of the absorption spectrum at 10 K. The oscillator strengths of the transitions from the ground state to excited multiplets are determined from the absorption cross-section spectra at 300 K for ten transitions in the range 5000–38 500 cm^?1 and seven transitions in the range 5000–28 500 cm^?1. The transition intensity parameters Ω _t , obtained by the Judd-Ofelt method from the spectra due to the transitions to ten and seven excited levels, were found to be, respectively, (i) Ω₂ = 1.89 × 10^?20, Ω₄ = 2.16 × 10^?20, and Ω₆ = 1.40 × 10^?20 cm² and (ii) Ω₂ = 2.04 × 10^?20, Ω₄ = 2.01 × 10^?20, and Ω₆ = 1.44 × 10^?20 cm². These values of the intensity parameters were used to calculate the radiative transition probabilities and branching ratios and to estimate the multiphonon nonradiative transition probabilities for NYF:Tm. The luminescence decay kinetics from thulium radiative levels upon their selective excitation by nanosecond laser pulses has been studied and the lifetimes of thulium radiative levels in NYF crystals have been found.     

Tunable laser Stark-difference spectra of CD3OH

We present Doppler resolution limited spectra of the P(J) and R(J) multiplets for J ≦ 10 of the 10-μm CO stretch band of ¹²CD₃¹⁶OH using a tunable diode laser. Relative frequencies within the multiplets accurate to ±0.0002–0.0005 cm^?1 are obtained, but no absolute frequencies are given. We are able to assign most of the hindered rotation and K substructure in these multiplets. The assignments are based on analyses of Stark-difference spectra combined with the ground-state microwave data and the intensity variations which are expected theoretically. The ground and excited state A, K = 1 asymmetry splitting parameters are measured to be δ₁″ = (8.5450 ± 0.0080) × 10^?3cm^?1 and δ₁′ = (9.7706 ± 0.0080) × 10^?3cm^?1, respectively. The ground-state value agrees well with the microwave results. A rapid-scan system for recording data and a computer-aided technique for calibrating and plotting the spectra are described.     

Cyclotron resonance of hot electrons and nonlinear transport phenomena in n-type indium antimonide

Impurity states and nonlinear transport phenomena in n-type indium antimonide under strong magnetic fields have been extensively studied at liquid helium temperatures through H₂O laser cyclotron resonance combined with d.c. measurements. A new type cyclotron resonance with modulation by pulsed electric field, or PEM-CR, has been utilized throughout. Origin of several weak transitions so far indefinite has been identified. Existence of the donor binding state in a magnetic field as low as 2·85 kOe for the excess donor concentration N_D ? N_A = 2 × 10¹³ cm^?3 is experimentally confirmed. Joint determination of resistivity and carrier distribution in the energy space has yielded a fair success in separating the mechanisms for the nonlinear transport behavior.     

Production and loss of N 2 + , Ne+ and Ne 2 + during the decay period of plasmas produced in neon-nitrogen mixtures

Studies of the time dependencies of the number density of N ₂ ⁺ , Ne⁺ and Ne ₂ ⁺ ions have been made during the decay period of plasmas produced in neon containing various concentrations of nitrogen molecules. Reaction rate constants were obtained for N ₂ ⁺ +N₂+Ne→N ₄ ⁺ +Ne((1.2±0.2)×10^?29 cm⁶ sec^?1) and Ne⁺+N₂→N ₂ ⁺ + Ne ((2.9±0.3) × 10^?12 cm³ sec^?1). The ambipolar diffusion coefficient of N ₂ ⁺ in neon was found to beD _a p _o =350±20 cm² sec^?1 Torr.     

Molecular binding states on clean and oxidized surfaces: SiO(g) + W(clean) and SiO(g) + W(oxidized)

The interactions between a molecular beam of SiO(g) and a clean and an oxidized tungsten surface were examined in the surface temperature range 600 to 1700 K by mass spectrometrically determined sticking probabilities, by flash desorption mass spectrometry (FDMS) and by Auger electron spectroscopy (AES). The sticking probability, S, of SiO has been determined as a function of coverage and of surface temperature for the clean and the oxidized tungsten surface. Over the temperature range studied and at zero coverage S = 1.0 and 0.88 for the clean and oxidized tungsten surfaces respectively. The results are consistent with both FDMS and AES. For coverage up to one monolayer there is one major adsorption state of SiO on the clean tungsten surface. FDMS shows that T_m = constant (T_m is the surface temperature at which the desorption rate is maximum) and that desorption from this state is described by a simple first order desorption process with activation energy, E_d = 85.3 kcal mole^?1 and pre-exponential factor, ν = 2.1 × 10¹⁴ sec^?1. AES shows that the 92 eV peak characteristic of silicon dominates. In contrast on the oxidized tungsten surface, T_m shifts to higher temperatures with increasing coverage. The data indicate a first order desorption process with a coverage dependent activation energy. At low coverage (θ ? 0.14) there is an adsorption state with E_d = 120 kcal mole^?1 and ν = 7.6 × 10¹⁹, while at θ = 1.0, E_d = 141 kcal mole^?1. This variation is interpreted as due to complex formation on the surface. AES shows that on oxidized tungsten, in contrast to clean tungsten, the dominant peaks occur at 64 and 78 eV, and these peaks are characteristic of higher oxidation states of silicon. Thus, it is concluded that SiO exists in different binding states on clean and oxidized tungsten surfaces.     

Emission characteristics and parameters of tin and CuSbSe2 laser plumes

The emission characteristics and parameters of laser plumes of tin and CuSbSe₂ compound are studied at distances of 1 and 7 mm from the target. The recombination times of singly and doubly charged tin ions are, respectively, 116 and 27 ns at a distance of 1 mm from the target and 148 and 64 ns at a distance of 7 mm. In the case of the CuSbSe₂ compound, the recombination times of antimony and copper ions are determined to be, respectively, 60 and 75 ns at a distance of 1 mm and 707 and 976 ns at a distance of 7 mm. The time-averaged temperatures and concentrations of electrons of the tin laser plasma are determined at a distance of 7 mm from the target (T _e = 0.42 eV and n _e = 2.9 × 10¹⁵ cm^?3), and the same parameters for the laser plasma based on the CuSbSe₂ compound are determined at distances of 1 and 7 mm from the target (T _e = 0.62 eV, n _e = 1.4 × 10¹⁶ cm^?3 and T _e = 0.86 eV, n _e = 8.4 × 10¹⁵ cm^?3).     

Photoelectron-photon coincidence studies of the A$̃and B$̃excited electronic states of X-CC-CN+, X = CH3, CD3, Cl,Br, I

Fluorescence quantum yields and lifetimes of the above given cations in selected levels within their lowest excited electronic states have been measured by a photoelectron—photon coincidence technique. These data, obtained under collision-free conditions, lead to the radiative and non-radiative rate constants as a function of the internal energy. The symmetry of the A$\text{\$}\text{?}$state is ²A₁ (X = CH₃, CD₃), ²Σ⁺ (X = Cl), but ²Π (X = Br, I) and the corresponding k_r values for these two groups, 1–2 × 10⁶s^?1 and 2 × 10⁷s^?1 respectively, reflect the different nature of the transitions. Other essential features of the results are discussed.