NEA GaN光电阴极量子产额研究

围绕NEA GaN光电阴极光电发射过程的光谱响应理论,研究了其量子产额问题。分别给出了反射模式和透射模式NEA GaN光电阴极的量子产额计算公式,分析了影响量子产额的因素。分析了国外制备的反射模式和透射模式NEA GaN光电阴极的量子产额曲线。结果表明,目前制备的NEA GaN光电阴极已具有高达30%的量子效率和良好的发射性能。相同条件下,反射模式比透射模式的量子效率要高,而且反射模式不像透射模式那样存在短波限制。     

S1光电阴极表面等离子激元-单电子激发对光电发射的作用

本文将表面等离子激光衰减-单电子激发光电发射理论应用于Ag-O-Cs光电阴极的发射机理的研究,对其发射机理提出了一个新的观点,即认为Ag-O-Cs光电阴极量子产额在800.0nm附近的峰值是由Cs₁₁O₃表面等离子激发所产生,并用这个观点解释了一些实验现象。     

S1光电阴极表面等离子激元－单电子激发对光电发射的作用

本文将表面等离子激光衰减－单电子激发光电发射理论应用于Ａｇ一Ｏ－Ｃｓ光电阴极的发射机理的研究，对其发射机理提出了一个新的观点，即认为Ａｇ－Ｏ－Ｃｓ光电阴极量子产额在８００．０ｎｍ附近的峰值是由Ｃｓ＿（１１）Ｏ＿３表面等离子激发所产生，并用这个观，久解释了一些实验现象     

GaN 光电阴极的研究及其发展

GaN 光电阴极的理论研究主要集中在量子产额、电子能量分布和表面模型三个方面.国内对 GaN 光电阴极的研究尚处于起步阶段,存在基础理论不太明确、关键制备工艺欠成熟的问题.重点探讨了 GaN 光电阴极在发射机理、材料生长、表面净化、激活工艺的优化、变掺杂结构设计和稳定性等方面的研究动向、存在的相关问题及应采取的措施.根据实验结果提出了制备GaN光电阴极的可行性工艺流程. 关键词： GaN 光电阴极 发展     

用积分法推导ENA光电阴极的量子产额

以“三步发射模型”为基础,采用积分的方法推导出反射式笔爱射式负电子亲和势（ＮＥＡ）光电阴极的量子产额表达式,工阴极的表达式和传统的求解扩散方程得出的表达式完全相同;而根据透射式阴极的表达式绘出的量子产额理论曲线,和求解扩散方程绘出的曲线基本重合,与实验曲线也符合得很好。     

用积分法推导NEA光电阴极的量子产额

以“三步发射模型”为基础, 采用积分的方法推导出反射式和透射式负电子亲和势（ Ｎ Ｅ Ａ）光电阴极的量子产额表达式, 其中反射式阴极的表达式和传统的求解扩散方程得出的表达式完全相同, 而根据透射式阴极的表达式绘出的量子产额理论曲线, 和求解扩散方程绘出的曲线基本重合, 与实验曲线也符合得很好。     

一种新型硬X射线光电阴极

分析了X射线光电效应的特点,讨论了俄歇电子和二次电子的产生机理.在原有的对软X射线具有较高光电发射量子效率的基础上,我们通过改变材料的配比,研究并优化了一种理想的复合光阴极,它对能量在30→50KeV的硬X射线的量子效率最高可达到1.5电子/光子.     

圆柱腔体光电输运的蒙特卡罗模拟

应用三维并行蒙特卡罗程序JMCT, 计算了特征温度分别为1, 3, 5, 8keV的黑体谱X射线入射到铝、二氧化硅、金的表面的背散射光电产额和电子能谱, 并与文献结果进行对比, 验证了程序的正确性, 进而针对系统电磁脉冲(SGEMP)研究中的典型几何结构——金属圆柱腔体, 模拟计算了其在黑体谱X射线照射下的光电输运过程, 用温度为1keV、注量为1J/m2的黑体谱X射线平行照射圆柱腔侧面, 半个侧面发射光电子, 计算得出了和方位角相关的不同面上发射光电子的光电产额、能谱分布和角分布, 结果表明掠入射的X射线会产生更高的光电产额; 光电子的发射角分布都基本符合余弦角分布的规律。     

负电子亲和势光电阴极量子效率公式的修正

量子效率是表征负电子亲和势（NEA）光电阴极发射性能的最重要的特性参数,准确建立量子效率公式为揭示各个阴极参量对整体性能的影响以及NEA光电阴极的优化设计提供了重要的理论指导.在对NEA光电阴极体内及表面光电发射过程的分析基础上,考虑入射光子能量、表面能带弯曲区以及表面势垒对电子发射的影响,对表面逸出概率和电子衰减长度进行了修正,并利用积分法推导了NEA光电阴极的量子效率公式,其理论预测曲线与实验曲线基本一致,从而验证了修正公式的实用性.为NEA光电阴极的研究提供了有效的理论参考依据. 关键词： 负电子亲和势光电阴极 量子效率 能带弯曲区 衰减长度     

基于光电阴极的超快X射线源设计及调制性能研究

为解决基于热阴极的传统X射线管灯丝发射结构脆弱、能量效率低以及散热等问题,设计了一种新型光控脉冲X射线管装置。通过光电阴极与光源的参数匹配,选择蓝光波段量子效率高的S20阴极与波长为460 nm的LED光源。模拟计算确定X射线管整体结构设计。最终实现最大2.37 mA的管电流,光电阴极电子发射效率为0.288 mA/lm,出射X射线能量0～25 keV可调。另外,基于光控脉冲X射线管出射X射线强度易调制的特性,进行不同频率加载信号还原实验和任意X射线轮廓还原实验。     

内爆腔X光发射机制研究

介绍了首次利用三台亚千X光能谱仪和一台针孔相机研究腔靶内爆区X光发射机制,实验结果表明内爆区X光发射主要是壁X光面发射。     

热核衰变中轻粒子的发射时间

报道了25MeV/u ⁴⁰Ar+¹⁹⁷Au反应中裂片符合下的粒子—粒子关联函数及其发射时间.实验测得粒子的平均发射时间为200—300fm/c,表明轻粒子的裂前发射占主导.在平面发射和出平面发射的粒子发射时间相差很少,发射时间是随着粒子能量的改变而发生显著变化,从中速粒子的约300fm/c下降至类弹粒子的约30—100fm/c.     

Search for γ-Emission from Isomeric Nuclei Induced by MeV Electron Beams

In this paper we study the nuclear transitions induced by incident electrons having an energy of several MeV's. We measured the cross sections for the excitation of isomeric nuclear states by 7.7 MeV electrons. The cross sections were 1.2 μb for ^111m Cd, 5.5 μb for ^113m In and 7.0 μb for ^115m In. The peak activation rates were 1.8×10⁻¹² s⁻¹ for ^111m Cd, 8.1×10⁻¹² s⁻¹ for ^113m In and 1.0×10⁻¹¹ s⁻¹ for ^115m In, for a peak power of the electron beam of 1.8×10⁶ W cm⁻². Then we describe for the first time the results of a series of experiments in which samples containing the isomeric nuclei ^166m Ho and ^186m Re have been irradiated with MeV electron beams. An upper limit of 17 mb has been determined for the cross section of electron-induced γ-emission from ^166m Ho and an upper limit of 2.2 mb has been determined for the cross section of electron-induced γ-emission from ^186m Re. This revised version was published online in July 2006 with corrections to the Cover Date.     

三维热场致发射模型的数值模拟与研究

研究了场致发射与热电子发射的基本理论, 得出热场致发射的适用公式, 探讨了其粒子的初始分布和初始动量, 并在FDTD-PIC原理的基础上编写了软件, 分别实现了场致发射模型, 热电子发射模型和热场致发射模型, 通过分别对一个长楔形阴极器件的数值模拟, 从发射电流特性, 电子初始能量分布等方面验证了其正确性.     

The effect of electric field strength on electroplex emission at the interface of NPB/PBD organic light-emitting diodes

Organic light-emitting diode (OLED) based on two kinds of blue emission materials N,N′-bis(1-naphthyl)-N,N′-diphenyl-l,l′-diphenyl-4,4′-diamine (NPB) and 2-(4-biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole (PBD) was fabricated. There is only one emission peak in photoluminescence (PL) spectrum which originates from NPB exciton emission. And the electroluminescence (EL) emission peaks have an apparent red-shift with the increase of driving voltage. The red-shift emission from exciplex emission could be ruled out. Thus, by the method of Gaussian fitting it should be ascribed to the overlap of exciton emission and electroplex emission which occurs at the interface between NPB and PBD. The formation of the electroplex emission under high electric field is analyzed.     

Amplified Emissions Spectroscopy for Sensing Applications

Amplified emission spectroscopy is promising for applications of qualitative and quantitative sensing of elements and their states. This technique has the characteristics of a narrow spectral line, high spectral resolution, and high signal‐to‐noise ratio. Recently, this technology has advanced tremendously with progress in excitation methods, that is, resonance multiphoton absorption and filamentation with ultrafast lasers. The mechanism, conditions, excitation, signal processing, and applications of amplified emission spectroscopy are reviewed herein. In particular, the different formation patterns of the amplified emission spectra produced by an ultrafast laser are analyzed in detail. In addition, a brief introduction is given to the existing applications of amplified emission. Finally, both a conclusion and a perspective of the future for amplified emission are presented.     

中能核反应中碰撞参数的确定

介绍了中高能核反应过程中与碰撞参数相关的可观测量.确定碰撞参数的各种方法 ,以及这些方法的适用范围和可靠性.这些方法包括约化线性动量转移、带电离子多重性、横向动量的方向性、横向动能和纵向动能的比 Erat、 Zbound和椭圆流参量. Observables that related to the impact parameters in intermediate and relativistic energy heavy ion reactions were introduced. These observables that related to the impact parameter include linear momentum transfer, multiplicities of charged particles, the ratio of transverse kinetic energy and longitudinal kinetic energy E rat , the transverse momentum directivity, Z bound , elliptic flow etc. Impact parameter determination for intermediate and relativistic energy heavy...     

The Absorption Spectrum of UF6, from 2000 to 4200 Å

The absorption spectrum of UF₆ between 3400 and 4200 Å, is well-documented,^(1–3) but the region below 3400 Å has not been studied in any detail. We present here a spectrum of UF₆ between 2000 and 4200 Å that shows significant structure below 3400 Å. The absorption in this region must be observed at very low pressures and relatively short path lengths.     

The “Average” Work Function and Emission Area in the Fowler-Nordheim Equation

Derivation of the elementary Fowler-Nordheim equation is based on several strong physical assumptions (e.g. smooth flat surface and uniform work function across emitting surface, constant emission area and a uniform distribution of the applied field over it). A real emitter, however, definitely does not fulfill these assumptions. In spite of it the total emission current follows the FN equation and is frequently used for an estimation of the "average" work-function. The physical basis of this procedure and of the terms "average" work function and "emission area" are analyzed from the experimentalist's point of view. Thus some of the older - more or less intuitive - conclusions are substantiated.     

Exciplex or electroplex emissions from the interface between aromatic diamine and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline?

Organic light-emitting diodes (OLEDs) have been fabricated which consist of N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine) (TPD), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), and tris(8-hydroxyquinoline) aluminum (Alq₃). Four emission peaks located at about 401 nm, 425 nm, 452 nm and 480 nm have been obtained in the electroluminescence (EL) spectra of these devices. The former two emissions originate from the exciton emission of TPD molecular. The last two emissions could be attributed to local (LOC) exiplex emission and charge transfer (CT) exiplex emission at the interface between TPD and BCP layers, respectively.