Oscillations of the magnetoresistance of a two-dimensional electron gas in a GaAs quantum well with AlAs/GaAs superlattice barriers in a microwave field

The effect of microwave radiation in the frequency range from 1.2 to 10 GHz on the magnetoresistance of a high-mobility two-dimensional electron gas has been studied in a GaAs quantum well with AlAs/GaAs superlattice barriers. It has been found that the microwave field induces oscillations of this magnetoresistance, which are periodic in the reciprocal magnetic field (1/B). It has been shown that the period of these oscillations in the frequency range under study depends on the microwave radiation power.     

Magnetoresistance oscillations due to Zener tunneling and microwave radiation in a 2D electron gas in GaAs quantum well with AlAs/GaAs superlattices barriers

The effect of microwave radiation in the frequency range from 1.2 to 10 GHz on the magnetoresistance of a high-mobility two-dimensional electron gas has been studied in a GaAs quantum well with AlAs/GaAs superlattice barriers. It has been found that the microwave field induces magnetoresistance oscillations periodic in the reciprocal magnetic field (1/B). It has been shown that the period of these oscillations in the covered frequency range depends on the microwave radiation power.     

Absolute negative resistance in a nonequilibrium two-dimensional electron system in a strong magnetic field

The effect of microwave electromagnetic radiation on the resistance of the 2D electron gas in a GaAs/AlAs heterostructure in a strong magnetic field is investigated. It is shown that, under the nonequilibrium conditions caused by microwave radiation, the aforementioned 2D system exhibits giant oscillations of its resistance with varying magnetic field. When the measuring current density is small, an increase in the microwave power leads to the appearance of an absolute negative resistance at the main minimum of these oscillations, which lies near the cyclotron resonance. The experimental data are found to be in qualitative agreement with the theory of multiphoton photoinduced impurity scattering [J. Inarrea and G. Platero, Appl. Phys. Lett. 89, 052109 (2006)].     

Microwave photoresistance of a double quantum well at high filling factors

The effect of millimeter wave radiation on the electronic transport in a GaAs double quantum well at a temperature of 4.2 K in a magnetic field of up to 2 T has been studied. Resistance (conductance) oscillations have been shown to appear in the two-dimensional electronic system under investigation at high filling factors. The magnetic field positions of the oscillation maxima are determined by the condition Δ_SAS/? = lω_c, where Δ_SAS = (E ₂ ? E ₁) is the size quantization sublevel splitting in the quantum well, ω_c is the cyclotron frequency, and l is a positive integer. It has been found that the microwave field substantially modifies the oscillations in the double quantum well, which results in alternating two-frequency oscillations of photoresistance with the inverse magnetic field.     

Absolute negative resistance in a nonequilibrium two-dimensional electron system in a strong magnetic field

The effect of microwave electromagnetic radiation on the resistance of the 2D electron gas in a GaAs/AlAs heterostructure in a strong magnetic field is investigated. It is shown that, under the nonequilibrium conditions caused by microwave radiation, the aforementioned 2D system exhibits giant oscillations of its resistance with varying magnetic field. When the measuring current density is small, an increase in the microwave power leads to the appearance of an absolute negative resistance at the main minimum of these oscillations, which lies near the cyclotron resonance. The experimental data are found to be in qualitative agreement with the theory of multiphoton photoinduced impurity scattering [J. Inarrea and G. Platero, Appl. Phys. Lett. 89, 052109 (2006)]. Original Russian Text ? A.A. Bykov, D.R. Islamov, D.V. Nomokonov, A.K. Bakarov, 2007, published in Pis’ma v Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2007, Vol. 86, No. 9, pp. 695–698.     

Submillimeter wave induced resistance oscillations in ultra-high mobility two-dimensional electron systems

Submillimeter wave induced resistance oscillations in two ultra-high mobility GaAs/Al_0.24Ga_0.76As quantum well samples have been investigated by means of a backward wave oscillator and far-infrared laser at ³He temperatures. Subnikov–de Haas oscillation, submillimeter wave induced resistance oscillation, and magnetoplasmon resonance occur simultaneously in this frequency regime. The primary radiation induced resistance minimum shifts toward cyclotron resonance with increasing radiation frequency. The positions of these minima agree well with those of the magnetoplasmon resonance. The higher-order harmonics of the resistance oscillation remain around the multiples of the cyclotron resonance frequency. An in situ transmission measurement exhibits an asymmetric broadening of the cyclotron resonance, appearing as a combination of the cyclotron resonance and the magnetoplasmon resonance, but no features directly linked to the microwave induced resistance oscillation can be seen.     

Microwave photoresistance in a two-dimensional electron system with anisotropic mobility

The effect of microwave radiation on magnetotransport in single GaAs quantum wells with anisotropic mobility, whose maximum corresponds to the $[1\bar 10]$ direction and minimum to the [110] direction, is investigated using the Van der Pauw method. In samples shaped as squares with sides oriented along the $[1\bar 10]$ and [110] directions, giant oscillations of magnetoresistance arise under the effect of a microwave field for the both $[1\bar 10]$ and [110] orientations of the measuring current I _ac. In the anisotropic two-dimensional system under study, the relative amplitude of microwave photoresistance oscillations in a magnetic field weakly depends on the orientation of I _ac. At a temperature of 4.2 K and a microwave frequency of 130 GHz, magnetic field intervals characterized by close-to-zero resistance manifest themselves only for the case of the [110] orientation of I _ac. The aforementioned experimental results are qualitatively explained by a quasi-one-dimensional potential modulation of the two-dimensional electron gas in the [110] direction.     

Microwave photoresistance in a two-dimensional electron system with anisotropic mobility

The effect of microwave radiation on magnetotransport in single GaAs quantum wells with anisotropic mobility, whose maximum corresponds to the direction and minimum to the [110] direction, is investigated using the Van der Pauw method. In samples shaped as squares with sides oriented along the and [110] directions, giant oscillations of magnetoresistance arise under the effect of a microwave field for the both and [110] orientations of the measuring current I _ac. In the anisotropic two-dimensional system under study, the relative amplitude of microwave photoresistance oscillations in a magnetic field weakly depends on the orientation of I _ac. At a temperature of 4.2 K and a microwave frequency of 130 GHz, magnetic field intervals characterized by close-to-zero resistance manifest themselves only for the case of the [110] orientation of I _ac. The aforementioned experimental results are qualitatively explained by a quasi-one-dimensional potential modulation of the two-dimensional electron gas in the [110] direction. Original Russian Text ? A.A. Bykov, D.R. Islamov, A.V. Goran, A.K. Bakarov, 2007, published in Pis’ma v Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2007, Vol. 86, No. 12, pp. 891–895.     

Excitation of ion cyclotron waves at the difference frequency of two microwave beams in a semiconductor

This paper presents an investigation of the resonant excitation of the electrostatic ion cyclotron wave at the difference frequency of two microwave beams propagating in a magnetoactive solid state plasma, viz. n InSb. The resonant excitation of the electrostatic ion cyclotron wave occurs when the difference frequency of the two microwave beams and the difference of their propagation vectors satisfy the dispersion relation corresponding to the electrostatic ion cyclotron wave. For typical plasma parameters of n InSb and microwave beams of power densities 1 MW cm^?2, the power density of the excited ion cyclotron wave is 0.40 kW cm^?2 when external magnetic field is $\text{1.46 kG (}\text{Ω}{}_{\mathrm{c}}\text{ω}\text{) = 0.1)}$. The power density of the excited ion cyclotron wave increases with the magnetic field. This study may provide new means for the characterisation and diagnostic of semiconductors.     

Coexistence of collective and single-particle effects in the photoresponse of a 2D electron gas to microwave radiation

The photoresponse of magnetoresistance of a high-density two-dimensional electron system to microwave electromagnetic radiation is studied. The damping of the Shubnikov-de Haas oscillation by radiation with a non-monotonic dependence of this effect on the magnetic field and the radiation-induced oscillations of magnetoresistance are observed. The damping is most pronounced within isolated narrow magnetic field intervals that closely correspond to the expected positions of magnetoplasma resonances in the sample under study and also near the cyclotron resonance position. A “window” is observed in the photoresponse near the field value predicted on the basis of a single-particle electron spectrum consisting of broadened Landau levels. The radiation-induced oscillations, the window in the photoresponse, and the damping of the Shubnikov-de Haas oscillations near the cyclotron resonance are described in terms of the theory based on the concept of the nonequilibrium filling of single-electron states. Thus, it is demonstrated that the photoresponse pattern observed in the experiment is formed by both single-particle and collective (magnetoplasma) effects.     

Barrier D − complexes in a high-mobility two-dimensional electron system

The cyclotron excitation spectrum of selectively doped AlGaAs/GaAs quantum wells with a high (up to 2 × 10⁷ cm²/(V s)) mobility of electrons has been studied by means of the Raman scattering. The lines of the Raman scattering by the excitations of D ^? complexes, the objects in which two electrons localized in a quantum well are coupled to a charged impurity in a barrier, have been detected and identified. Spin-singlet D ^? complexes have been shown to exist in the entire range of the electron filling factor, from v → 0 to v = 2, owing to the specificity of the Coulomb interaction in two-dimensional systems. The excitation energies of the singlet D ^? complexes have been studied as functions of the electron density, quantum well width, and magnetic field.     

Observation of Microwave-Induced Magnetoresistance Oscillations in a ZnO/Mg<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>O Heterojunction

Microwave-induced magnetoresistance and magnetoconductance oscillations in the two-dimensional electron system have been detected in a ZnO/Mg _x Zn_1–x O heterojunction. The structure has a high electron density of n = 6.5 × 10¹¹ cm^–2 and a very low mobility of 10⁵ cm² V^–1 s^–1. This clearly indicates that the mobility of two-dimensional electrons is not a critical parameter for the observation of microwave-induced oscillations. The samples were both Hall bars and Corbino disks. At least four oscillations have been resolved. Their amplitude increases with the magnetic field and all oscillations with numbers >1 have the same phase of 0.25. It has been shown that the microwave-induced photoelectromotive force is also a periodically oscillating function of the inverse magnetic field.     

Hall effect plateaus and giant Shubnikov-de Haas oscillations in (BiSb)Telayered single crystals near the quantum limit

On bulk layered single crystals (Bi_0.25Sb_0.75)₂Te₃ with a hole concentration cm^-3 and a mobility cm²/Vs magnetoresistance and Hall effect investigations were performed in the temperature range T = 1.4 K ... 20 K in magnetic fields up to 18 T. For the magnetic field perpendicular to the layered structure giant Shubnikov-de Haas oscillations are measured; the positions of the maxima are triplets in the reciprocally scaled magnetic field. From the damping of the amplitudes with increasing temperature the cyclotron mass m _c = 0.12m ₀ is evaluated. Correlated with the SdH oscillations doublets of Hall effect plateaus (or kinks in low fields) are found. The weak well known Shubnikov-de Haas oscillations from the generally accepted multivallied highest valence band can be detected as a modulation on the giant oscillation. The high anisotropy of the SdH oscillations and their triplet structure in connection with the layered crystal structure lead us to suggest that the effects are caused by hole carrier pairing (mediated by the bipolaron mechanism) in quasi 2D sheets parallel to the crystal layer stacks. The measured Hall plateau resistances coincide with the quantum Hall effect values considering the number of layer stacks and the valley degeneracy of the 3D hole carrier reservoir. The ratio of spin splitting to Landau (cyclotron) splitting is observed to be . Received: 12 September 1997 / Revised: 8 January 1998 / Accepted: 22 January 1998     

Observation of a node in the quantum oscillations induced by microwave radiation

The microwave induced magnetoresistance in a GaAs/AlGaAs heterostructure was studied at temperatures below 1 K and frequencies in the range of 150-400 GHz. A distinct node in the Shubnikov-de Haas oscillations, induced by the microwave radiation, is clearly observed. The node position coincides with the position of the cyclotron resonance on the carriers with effective mass (0.068±0.005)m₀.     

Hysteretic microwave cyclotron resonance of a laterally confined 2 DEG

A hysteretic cyclotron resonance (CR) is discovered in a laterally confined high mobility two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures. The hysteresis and switching phenomena are observed in microwave radiation (36 GHz) transmission at temperature 1.8–25 K. It is found that the hysteresis is accompanied by long-lived, microwave-induced changes of the 2DEG density. These density changes is attributed to a modification of electron vertical transport processes in heterostructures under the microwave heating of the 2DEG. A phenomenological model based on the 2DEG density-dependent CR, describes reasonably the main experimental findings.     

Radiation-induced resistance oscillation and instability in GaAS/AlGaAS heterostructure under transverse magnetic fields

This paper studies dynamics of a modulation-doped GaAs/AlGaAs heterostructure under transverse magnetic fields and microwave radiations. It finds that negative differential conductivity, due to the real-space electron transfer and delayed dielectric relaxation of the interface potential barrier, can lead to complex behaviours when a relatively small magnetic field is applied. Quasiperiodicity, frequency-locking and the routes from period-doubling to chaos are found. Under a large magnetic field, however, two time-independent homogeneous steady states exist; and the longitudinal resistance of the system shows an interesting oscillation with period tuned by the ratio of microwave radiation frequency w to the cyclotron frequency Wc and local minima at ω/ωc = integer ＋ 1/4.     

Microwave radiation induced collective response in Si/SiGe heterostructures with a 2D electron gas

The collective resonant photoresponse in Si/SiGe structures with a 2DEG under microwave radiation is reported for the first time. The application of microwave radiation of various frequencies results in resonant photoconductivity at magnetic field values that are systematically lower than expected for the cyclotron resonance (CR) in an infinitely large two-dimensional electron system. The analysis of the data shows that the observed microwave radiation induced response is dominated by plasmon excitations.     

调制掺杂GaAs/N-AlGaAs异质结的制备及输运性质

本文报道利用垂直束源式的分子束外延设备,生长了高质量的调制掺杂GaAs/N-AIGaAs异质结构,液氦温度下的二维电子迁移率达4.26×10⁵cm²/V·s(非光照)、5.9×10⁵cm²/V·S(光照)。用脉冲磁场下的磁声子共振测量,得到了二维电子的有效质量,并研究了异质结构中二维电子的低场迁移率增强特性及低温强磁场下的量子霍耳效应。 关键词：     

Optically detected cyclotron resonance in a high mobility 2D electron gas

We study the properties of high mobility GaAs/GaAlAs quantum well structure by monitoring the microwave induced changes in the low-temperature photoluminescence of the 2DEG as a function of the external magnetic field. The most pronounced changes are observed at cyclotron resonance conditions, but weak features are also visible at cyclotron resonance replicas. Possible observation of microwave induced shift in the Landau-level structure of magneto-photoluminescence is reported in addition to the effects of carrier heating which are conventionally bracketed together with microwave irradiation.     

Microwave-induced magnetic field oscillations of the electromotive force in a two-dimensional Corbino disk at large filling factors

Microwave-induced magnetic field oscillations of the electromotive force are observed at large filling factors in two-dimensional Corbino disks fabricated on the basis of GaAs/AlAs heterostructures. It is shown that these oscillations of the electromotive force are periodic in the inverse magnetic field and are in antiphase with oscillations of microwave photoconductivity. The experimental data are explained by the inhomogeneous distribution of the microwave field between the coaxial metal contacts to the two-dimensional electron system.