Electron channel with high carrier mobility at the interface of type-II broken-gapp-GaInAsSb/p-InAs single heterojunctions

We have studied experimentally the magneto-transport properties of type-II broken-gap Ga_1 − xIn_xAsSb/p-InAs heterostructures with various doping levels of the quaternary layer by Te or Zn. A strong electron channel with high electron mobility was observed at the interface of the heterostructures. Interface roughness scattering was found to dominate the electron mobility atT = 4.2–47 K in samples with an undoped or a slightly doped quaternary layer. A drastic mobility drop with increasing Zn doping level was observed. Shubnikov–de Haas oscillations at low temperatures (1.5–20 K) were studied and a weak anisotropy of magnetoresistance was found. Some important parameters of the heterostructures under study were determined.     

Magnetic properties of RPdIn (R=Gd–Er) compounds

AC susceptibility and DC magnetization measurements were performed for the RPdIn (R=Gd–Er) compounds both in the paramagnetic and in the ordered state. In opposite to GdPdIn, which is a ferromagnet (T_c=102 K), the other samples show a complex ferrimagnetic behavior with the additional transition at T_t<T_c. In the high-temperature phase (for T_t<T<T_c), a ferromagnetic interaction dominates, while in the low-temperature phase (for T⩽T_t) antiferromagnetic interactions with the magnetocrystalline anisotropy, especially strong for TbPdIn, come into play. The ordering temperatures are T_c=70, 34, 25 and 12.3 K for Tb-, Dy-, Ho- and ErPdIn respectively, while transition temperatures are T_t=6, 14 and 6 K for Tb-, Dy- and HoPdIn respectively. TbPdIn reveals an additional transition at 27 K connected with the intermediate ferrimagnetic phase. The critical fields for the magnetization process of the low-temperature phase are high (52 and 150 kOe for TbPdIn and 32 kOe for DyPdIn at T=4.2 K) yet these values decrease remarkably with increasing temperature. Results of the study are compared with magnetic and neutron diffraction data hitherto available. We state that irreversibility of the zero-field cooled–field cooled magnetization is not connected with the spin-glass phase claimed elsewhere.     

Magnetotransport properties of ferromagnetic LaMnO3+δ nano-sized crystals

Transport and magnetic properties of LaMnO_3+δ nanoparticles with average size of 18 nm have been investigated. The ensemble of nanoparticles exhibits a paramagnetic to ferromagnetic (FM) transition at T_C～246 K, while the spontaneous magnetization disappears at T≈270 K. It was found that the blocking temperature lies slightly below T_C. The temperature dependence of the resistivity shows a metal–insulator transition at T≈192 K and low-temperature upturn at T<50 K. The transport at low temperatures is controlled by the charging energy and spin-dependent tunnelling through grain boundaries. The low temperature I–V characteristics are well described by indirect tunnelling model while at higher temperatures both direct and resonant tunnelling dominates.     

Magnetocaloric heat-pump cycles based on the AF–F transition in Fe–Rh alloys

The proposal involves a heat-pumping scheme based upon the first-order antiferromagnetism–ferromagnetism transition in FeRh alloy. Using the model S–T diagram for this alloy, the heat-pump cycles, are drawn up based on the transition latent heat absorption and emission when the transition is induced by applying magnetic field. The calculated values of heat coefficient ϕ for the cycles are ∼39 at ΔT=5 K and ∼30 at ΔT=10 K, where ΔT is the difference between the temperature surrounding and that of the heat receiver. These values are achieved using the comparatively low magnetic fields of ∼2×10⁶ A m⁻¹. The high values of ϕ, together with high value of cooling capacity, make it possible to consider Fe–Rh alloys as an effective magnetic heat-pump working body near the room temperature.     

Electrical and optical properties of the GaInAsSb-based heterojunctions for infrared photodiode and thermophotovoltaic cell application

The electrical end optical characteristics of a type II double heterojunction (DH) in the GaSb/GaInAsSb/GaAlAsSb system with staggered band alignment were studied. An analysis of the photodiodes performance through the investigation into electrical and optical characteristics was carried out. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results show that at the low temperature region, the tunneling mechanism of the current flow dominates in both forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V, the reverse current was defined by generation of carriers in the depletion region. Have been estimated the temperature coefficient of the shift of the long-wavelength edge of the spectral sensitivity at half-maximum as Δλ/ΔT = 1.6 nm/K. Quantum efficiency of 0.6–0.7 for the investigated photodiodes was reached without any antireflection coating. For GaSb/GaInAsSb/GaAlAsSb TPV cells, the internal quantum efficiency of 90% was achieved at wavelengths between 1.2 and 1.6 μm.     

Luminescence study of self-trapped excitons in CdMoO4

Luminescence properties of CdMoO₄ crystals have been investigated in a wide temperature range of T=5–300 K. The luminescence-excitation spectra are examined by using synchrotron radiation as a light source. A broad structureless emission band appears with a maximum at nearly 550 nm when excited with photons in the fundamental absorption region (<350 nm) at T=5 K. This luminescence is ascribed to a radiative transition from the triplet state of a self-trapped exciton (STE) located on a (MoO₄)^2? complex anion. Time-resolved luminescence spectra are also measured under the excitation with 266 nm light from a Nd:YAG laser. It is confirmed that triplet luminescence consists of three emission bands with different decay times. Such composite nature is explained in terms of a Jahn–Teller splitting of the triplet STE state. The triplet luminescence at 550 nm is found to be greatly polarized in the direction along the crystallographic c axis at low temperatures, but change the degree of polarization from positive to negative at T>180 K. This remarkable polarization is accounted for by introducing further symmetry lowering of tetrahedral (MoO₄)^2? ions due to a uniaxial crystal field, in addition to the Jahn–Teller distortion. Furthermore, weak luminescence from a singlet state locating above the triplet state is time-resolved just after the pulse excitation, with a polarization parallel to the c axis. The excited sublevels of STEs responsible for CdMoO₄ luminescence are assigned on the basis of these experimental results and a group-theoretical consideration.     

Sodium diffusion in cryolite at elevated temperatures studied by quasielastic neutron scattering

Quasielastic neutron scattering (QENS) has been applied to study the sodium mobility on nanosecond time scales in the perovskite fluoride cryolite, Na₃AlF₆, at high temperatures. Up to T = 1153 K the diffusion of Na ions is well described by a diffusion process of jumps between six and eight-fold coordinated sites. Above this temperature, where a step-like increase in the electrical conductivity occurs, the jump length increases, which indicates additional jumps over larger distances. The electrical conductivity derived from the self-diffusion coefficient via the Nernst–Einstein relation and the corresponding activation energy are in excellent agreement with the previous conductivity measurements. We conclude that the jump diffusion of sodium ions is the dominant mechanism for the electrical conductivity in cryolite at high temperatures up to T = 1153 K.     

The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes

Thermal effects on the optoelectrical characteristics of green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) have been investigated in detail for a broad temperature range, from 30 °C to 100 °C. The current-dependent electroluminescence (EL) spectra, current–voltage (I–V) curves and luminescence intensity–current (L–I) characteristics of green InGaN/GaN MQW LEDs have been measured to characterize the thermal-related effects on the optoelectrical properties of the InGaN/GaN MQW LEDs. The experimental results show that both the forward voltages decreased with a slope of ?3.7 mV/K and the emission peak wavelength increased with a slope of +0.02 nm/K with increasing temperature, indicating a change in the contact resistance between the metal and GaN layers and the existence of a band gap shrinkage effect. The junction temperature estimated from the forward voltage and the emission peak shift varied from 25.6 to 14.5 °C and from 22.4 to 35.6 °C, respectively. At the same time, the carrier temperature decreased from 371.2 to 348.1 °C as estimated from the slope of high-energy side of the emission spectra. With increasing injection current, there was found to be a strong current-dependent blueshift of ?0.15 nm/mA in the emission peak wavelength of the EL spectra. This could be attributed to not only the stronger band-filling effect but also the enhanced quantum confinement effect that resulted from the piezoelectric polarization and spontaneous polarization in InGaN/GaN heterostructures. We also demonstrate a helpful and easy way to measure and calculate the junction temperature of InGaN/GaN MQW LEDs.     

Raman studies of phase transitions in ferroelectric [C2H5NH3]2ZnCl4

The present paper accounted for the synthesis, differential scanning calorimetric and vibrational spectroscopy of [C₂H₅NH₃]₂ZnCl₄grown at room temperature. Differential scanning calorimetric (DSC) disclosed five phase transitions at T₁=231 K, T₂=234 K, T₃=237 K, T₄=247 K and T₅=312 K. The temperature dependence of the dielectric constant at different temperatures proved that this compound is ferroelectric below 238 K. Raman spectra as function temperature have been used to characterize these transitions and their nature, which indicates a change of the some peak near the transitions phase. The analysis of the wavenumber and the line width based on the order–disorder model allowed to obtain information relative to the thermal coefficient and the activation energy near the transitions phase.     

Giant magneto-caloric effect around room temperature at moderate low field variation in La0.7(Ca1−xSrx)0.3MnO3 perovskites

Among the perovskite manganites, a series of La_1?xCa_xMnO₃ has the largest magneto-caloric effect (MCE) (|ΔS_m|_max=3.2–6.7 J/kg K at ΔH=13.5 kOe), but the Curie temperatures, T_C, are quite low (165–270 K). The system of LaSrMnO₃ has quite high T_C but its MCE is not so large. The manganites La_0.7(Ca_1?xSr_x)_0.3MnO₃ (x=0, 0.05, 0.10, 0.15, 0.20, 0.25) have been prepared by solid state reaction technique with an expectation of large MCE at room temperature region. The samples are of single phase with orthorhombic structure. The lattice parameters as well as the volume of unit cell are continuously increased with the increase of x due to large Sr²⁺ ions substituted for smaller Ca²⁺ ions. The field-cooled (FC) and zero-field-cooled (ZFC) thermomagnetic measurements at low field and low temperatures indicate that there is a spin-glass like (or cluster glass) state occurred. The Curie temperature T_C increases continuously from 258 K (for x=0) to 293 K (for x=0.25). A large MCE of 5 J/kg K has been observed around 293 K at the magnetic field change ΔH=13.5 kOe for the sample x=0.25. The studied samples can be considered as giant magneto-caloric materials, which is an excellent candidate for magnetic refrigeration at room temperature region.     

Giant magnetic refrigerant capacity in Ho3Al2 compound

Magnetic properties and magnetocaloric effects (MCEs) of the intermetallic Ho₃Al₂ compound are investigated by magnetization and heat capacity measurements. Two successive magnetic transitions, a spin-reorientation (SR) transition at T_SR=31 K followed by a ferromagnetic (FM) to paramagnetic (PM) transition at T_C=40 K, are observed. Both magnetic transitions contribute to the MCE and result in a large magnetic entropy change (ΔS_M) in a wide temperature range. The maximum values of ?ΔS_M and adiabatic temperature change (ΔT_ad) reach 18.7 J/kg K and 4.8 K for the field changes of 0–5 T, respectively. In particular, a giant value of refrigerant capacity (RC) is estimated to be 704 J/kg for a field change of 5 T, which is much higher than those of many potential refrigerant materials with similar transition temperatures.     

Spin reorientation and magnetocrystalline anisotropy of (Nd1−xDyx) Fe14B

Spin reorientation and magnetocrytalline anisotropy of (Nd_1−xDy_x)₂Fe₁₄B (x=0.25, 0.5, 0.75) have been studied from mangetization curves of magnetically aligned powders. In (Nd_1−xDy_x)₂Fe₁₄B, the spin reorientation temperature (T_SR) decreases linearly on increasing Dy-substitution from 135 to 56 K with the ratio of ΔT_SR=−1.11 K/Dy at% in the composition range of 0⩽x⩽0.75. The spin reorientation angle at 4.2 K decreases on Dy-substitution from 30.4° at x=0 to 14.7° at x=0.75. From the investigation of the magnetocrystalline anisotropy at 4.2 K, the disappearance of the spin reorientation for compositions x≳0.85 is expected.     

Analysis of temperature-dependent electrical resistivity of ZnO nano-structures

The temperature–dependent electrical resistivity ρ(T) in metallic and semiconducting phase of ZnO nanostructures is theoretically analysed. ρ(T) shows semiconducting phase in low temperature regime (140 K<T<180 K), shows an absolute minimum near 180 K and increases linearly with T at high temperatures (200 K<T<300 K). The resistivity in metallic phase is estimated within the framework of electron–phonon and electron–electron scattering mechanism. The contributions to the resistivity by inherent acoustic phonons (ρ_ac) as well as high frequency optical phonons (ρ_op) were estimated using Bloch–Gruneisen (BG) model of resistivity. The electron–electron contributions ρ_e?e=BT² in addition with electron–phonon scattering is also estimated for complete understanding of resistivity in metallic phase. Estimated contribution to resistivity by considering both phonons, i.e., ω_ac and ω_op and the zero limited resistivity are added with electron–electron interaction ρ_e–e to obtain the total resistivity. Resistivity in Semiconducting phase is discussed with small polaron conduction (SPC) model. The SPC model consistently retraces the low temperature resistivity behaviour (140 K<T<180 K). Finally the theoretically calculated resistivity is compared with experimental data which appears favourable with the present analysis in wide temperature range.     

A nonlinear transport device with no intrinsic threshold

A ballistic rectifier, based on guidance of carriers by a triangular antidot, is shown to be both experimentally and theoretically capable of operating for weak signals. At T = 4.2 K, we find that the ballistic rectifier works when the input voltage is as low as 0.5 mV, the same order ofk_BT. Based on an extended Landauer–Büttiker formula for nonlinear transport, we show that even when the input signal is much smaller thank_BT, temperature has no obvious influence on the rectification effect.     

Thermoelectric power of CuCrxVySe4 p-type spinel semiconductors

Structural, electrical and magnetic measurements of polycrystalline CuCr_xV_ySe₄ spinels with x=1.79, 1.64 and 1.49 and y=0.08, 0.22 and 0.45, respectively, are presented. The compounds under study crystallize in regular system of a normal spinel type MgAl₂O₄ structure with the space group symmetry Fd3m. The chromium spins are coupled ferromagnetically and show both strong long- and short-range magnetic interactions evidenced by the large values of the Curie (T_C) and Curie–Weiss (θ_CW) temperatures, decreasing from T_C=407 K and θ_CW=415 K for y=0.08, via T_C=349 K and θ_CW=367 K for y=0.22 to T_C=283 K and θ_CW=293 K for y=0.45, respectively. In all the studied spinels a change of the electrical conductivity character from the semiconductive into the metallic one above 230 K was observed. A detailed thermoelectric power analysis showed a domination of diffusion thermopower component, maximum of phonon drag component at 230 K, a decrease of impurity component with increasing V content, as well as the weak magnon excitations at 40 K.     

Critical properties of superconducting Ba1−xKxFe2As2

Magnetisation and magneto-resistance measurements have been carried out on superconducting Ba_1?xK_xFe₂As₂ samples with x = 0.40 and 0.50. From high field magnetization hysteresis measurements carried out in fields up to 16 T at 4.2 K and 20 K, the critical current density has been evaluated using the Bean critical state model. The J_C determined from the high field data is >10⁴ A/cm² at 4.2 K and 5 T. The superconducting transitions were also measured resistively in increasing applied magnetic fields up to 12 T. From the variation of the T_C onset with applied field, dH_C2/dT at T_C was obtained to be ?7.708 T/K and ?5.57 T/K in the samples with x = 0.40 and 0.50.     

Dielectric properties and study of AC electrical conduction mechanisms by non-overlapping small polaron tunneling model in Bis(4-acetylanilinium) tetrachlorocuprate(II) compound

In the present work, the synthesis and characterization of the Bis(4-acetylanilinium) tetrachlorocuprate(II) compound are presented. The structure of this compound is analyzed by X-ray diffraction which confirms the formation of single phase and is in good agreement the literature. Indeed, the Thermo gravimetric Analysis (TGA) shows that the decomposition of the compound is observed in the range of 420–520 K. However, the differential thermal analysis (DTA) indicates the presence of a phase transition at T=363 k. Furthermore, the dielectric properties and AC conductivity were studied over a temperature range (338–413 K) and frequency range (200 Hz–5 MHz) using complex impedance spectroscopy. Dielectric measurements confirmed such thermal analyses by exhibiting the presence of an anomaly in the temperature range of 358–373 K. The complex impedance plots are analyzed by an electrical equivalent circuit consisting of resistance, constant phase element (CPE) and capacitance. The activation energy values of two distinct regions are obtained from log σT vs 1000/T plot and are found to be E=1.27 eV (T<363 K) and E=1.09 eV (363 K<T).The frequency dependence of ac conductivity, σ_ac, has been analyzed by Jonscher's universal power law σ(ω)=σ_dc+Aω^s. The value of s is to be temperature-dependent, which has a tendency to increase with temperature and the non-overlapping small polaron tunneling (NSPT) model is the most applicable conduction mechanism in the title compound.     

Luminescence of II–VI and III–V nanostructures

Photoluminescence of HgCdTe epitaxial films and nanostructures and electroluminescence of InAs(Sb,P) light-emitting diode (LED) nanoheterostructures were studied. For HgCdTe-based structures, the presence of compositional fluctuations, which localized charge carriers, was established. A model, which described the effect of the fluctuations on the rate of the radiative recombination, the shape of luminescence spectra and the position of their peaks, was shown to describe experimental photoluminescence data quite reasonably. For InAs(Sb,P) LED nanoheterostructures, at low temperatures (4.2–100 K) stimulated emission was observed. This effect disappeared with the temperature increasing due to the resonant ‘switch-on’ of the Auger process involving transition of a hole to the spin-orbit-splitted band. Influence of other Auger processes on the emissive properties of the nanoheterostructures was also observed. Prospects of employing II–VI and III–V nanostructures in light-emitting devices operating in the mid-infrared part of the spectrum are discussed.     

Low-bias,high-temperature operation of an InAs–InGaAs quantum-dot infrared photodetector with peak-detection wavelength of 11.7 μm

We report on a low-bias InAs–InGaAs quantum-dot (QD) infrared photodetector (QDIP) with operating temperature of 150 K. Longwave-infrared (LWIR) detection at the peak wavelength of 11.7 μm was achieved. Peak specific photodetectivity D¹ of 1.7 × 10⁹ and 9.0 × 10⁷ cm Hz^1/2/W were obtained at the operating temperature T of 78 K and 150 K, respectively. A large photoresponsivity of 8.3 A/W and high photoconductive gain of 1100 were demonstrated at a low-bias voltage of V = 0.5 V at T = 150 K. The low-bias and high-temperature performance demonstration based on InAs–GaAs material systems indicates that the QDIP technology is promising for LWIR sensing and imaging.     

Luminescence of Eu2+–vc− dipoles and their associates in CsI:Eu crystals

Spectral-kinetics properties of photo-scintillation excited with single light pulses of a nitrogen laser (λ=337.1 nm, t_1/2=5 ns, Q=1 mJ) have been studied in CsI:Eu crystals at temperature within 80–300 K. It is found that the exponential decay of 463 nm emission band has a time constant which grows from 0.85 μs at 78 K to 1.6 μs at 380 K. Such an anomalous temperature behavior of 463 nm emission decay kinetics is discussed in terms of the crystal thermal expansion. It has been proposed that 463 nm emission is caused by a cluster center consisting of three dipoles Eu²⁺v_c^? bounded with each other in a hexagon. Owing to the exchange resonance in the cluster, the energy passes from an excited dipole to a non-excited one and the distance between them gets longer due to thermal expansion of the crystal.