An effective growth method to improve the homogeneity of relaxor ferroelectric single crystal Pb(In1/2Nb1/2)O3‐ Pb(Mg1/3Nb2/3)O3‐PbTiO3

Compositional segregation usually has negative effects on the growth of solid solution ferroelectric single crystals of Pb(In_1/2Nb_1/2)O₃‐Pb(Mg_1/3Nb_2/3)O₃‐PbTiO₃ (abbr. PIN‐PMN‐PT or PIMNT). A modified Bridgman method was adopted in this work to control the segregation and improve the compositional homogeneity significantly. The characteristic of this work is to use multiround growths and gradient composition raw materials in order to keep the PbTiO₃ concentration constant during the crystal growth. As an example, the two‐round growth of ternary PIN‐PMN‐PT single crystal is conducted in the same Pt crucible with gradient raw materials, where the first‐round boule was used as the seed crystal for the second‐round growth. Our results show that the as‐grown (Ф80 mm × 270 mm) PIN‐PMN‐PT crystals exhibit higher phase transition temperatures (T_c∼180 °C, T_r/t∼110 °C) and larger coercive field (E_c∼5–5.5 kV/cm), which are much better than the performances of Pb(Mg_1/3Nb_2/3)O₃‐PbTiO₃ crystals, and similar dielectric and piezoelectric performances (ε∼5000, tanδ∼1.25%, d₃₃∼1500 pC/N, k_t∼60%). And about 85 percent of the crystal boule grown by the two‐round growth technique could maintain its compositions around the morphotropic phase boundary.     

In Situ Deposition of Highly C-axis Oriented Lanthanum Modified Lead Titanate Thin Films by Multi-Ion-Beam Reactive Co-sputtering Technique

Highly c-axis oriented La-modified PbTiO₃ (PLT) thin films were in situ grown on Pt(100)/MgO(100) and MgO(100) substrates by multi-ion-beam reactive co-sputtering (MIBRECS) technique at the substrate temperature range of 450°C-540°C. The orientation degree a of the films is more than 90%. The chemical composition is in good agreement with the designed one and is almost uniform across the surface of the substrates. The remanent polarization (P_r) and coercive field (E_c) were found to be 5.3 μC/cm² and 78 kV/cm, respectively.     

Effects in B–doped KDP crystals irradiated with neutrons of large spectra energy

The results obtained for the r₆₃ electro‐optic coefficient of B‐doped and undoped KDP (KH₂PO₄) crystals irradiated with neutrons (including thermalized neutrons) produced by scattering of 30 Mev cyclotron protons on a target of Ta²⁰¹, are presented and compared to those obtained for non‐irradiated doped and undoped crystals. The B‐doped (H₃BO₃, Na₂B₄O₇ and Li₂B₄O₇) crystals were obtained by the conventional growth method by temperature decrease with 1 wt % dopant concentration in solution. The thermal neutron flux was around ϕ = 1. 10¹⁰ n/cm² s. Pulses of ∼15 μs long, in damped oscillatory mode (V= 8 kV, τ=1.95 μs) were used for the electro‐optic measurements. A Pockels cell, a photomultiplier, a He‐Ne laser (λ=632.8 nm, 5 mW, linearly polarized) and a Tk 720 A oscilloscope complete the experimental setup. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electromechanical and electro-optic properties of xBiScO3–yBiGaO3–(1−x−y)PbTiO3 single crystals

Single crystals in the xBiScO₃–yBiGaO₃–(1−x−y)PbTiO₃ (BS–BG–PT) system were grown by the high temperature solution method using Pb₃O₄ and Bi₂O₃ as the flux. The dielectric permittivity (ε_r) at room temperature for unpoled tetragonal crystals was determined to be 500–600 with dielectric loss tangents less than 0.3%. The Curie temperature was found to be around ∼420–450°C, with a dielectric maximum, exhibiting relaxor behavior. The longitudinal piezoelectric coefficient (d₃₃) was found to be ∼300 pC/N for 〈0 0 1〉 oriented tetragonal crystals with electromechanical coupling factor (k₃₃) of 75%, with a shear mode, d₁₅∼290 pC/N and k₁₅∼45%, lateral mode, d₃₁∼−55 pC/N and k₃₁∼−37%. The remnant polarization (P_r) was 46 μC/cm² with a coercive field (E_c) of 43 kV/cm at 1 Hz and DC field of 60 kV/cm. The linear electro-optic (E-O) coefficients of poled crystals determined using an automated scanning Mach–Zehnder interferometer method at room temperature and wavelength of 632.8 nm were r₃₃=36 and r₁₃=4 pm/V, respectively.     

Surface Chemical Bonding States and Ferroelectricity of Pb(Zr0.52Ti0.48)O3 Thin Films

The surface chemical bonding states and the ferroelectric properties of sol‐gel deposited lead zirconate titanate [Pb(Zr_0.52Ti_0.48)O₃, PZT] thin films coated on (111)Pt/Ti/SiO₂/Si substrates were investigated. X‐ray photoelectron spectroscopy (XPS) was used to determine the oxidation state of the surface and the chemical composition as a function of depth in ferroelectric PZT thin layers. Values for the dielectric constant and dissipation factor at 1 kHz for the 300 nm‐thick film were 1214 and 0.014 for the film annealed at 520 °C, and 881 and 0.015 for a film annealed at 670 °C. Measured values for the remanent polarization (P_r) and coercive field (E_c), from polarization‐electric field (P‐E) hysteresis loops biased at 10 V at a frequency of 100 Hz, were 16.7, 14.4 μC/cm² and 60, 41.7 kV/cm for 520 °C and 670 °C. The leakage current density (J) was 72 and 96 nA/cm² at an applied field of 100 kV/cm. It was found that the bonding states of lead and oxygen in the surface regions could be correlated with the ferroelectric properties of the integrated thin layers.     

Fluorescence properties of Nd3+ doped stoichiometric LiNbO3 fiber single crystals by micro‐pulling down method

Using the micro‐pulling down (μ‐PD) method, 1 and 3 mol% Nd₂O₃ doped near stoichiometric lithium niobate (LiNbO₃) single crystal fibers were grown in 1 mm diameter and 35∼40 mm length. The grown crystal fibers were free of cracks and the homogeneous distribution of Nd³⁺ ion concentrations were confirmed by the electron probe micro analysis. The changes of fluorescence spectra were measured with respect to the Nd³⁺ ion doping concentration. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B₂O₃) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm⁻¹ in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B₂O₃ liquid was about 10¹⁶ cm⁻³ and was almost the same as that in a Ge crystal grown without B₂O₃. Oxygen concentration in a Ge crystal was enhanced to be greater than 10¹⁷ cm⁻³ by growing a crystal from a melt fully covered with B₂O₃; with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5×10¹⁷ cm⁻³. The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.     

Polymorphy of monoclinic terbium triborate,TbB3O6

TbB₃O₆, that suffers peritectic decomposition below its melting point, was obtained as single crystals by growth from borate flux. Depending on the borate flux, orthorhombic (space group Pnma) TbB₃O₆ belonging to the isomorphic series of rare earth triborates with small lanthanides, or monoclinic (space group C 2/c) TbB₃O₆, belonging the corresponding isomorphic series with large lanthanides, was synthesized. Within a broad range at subambient temperatures monoclinic TbB₃O₆ shows a structural phase transition with a large thermal hysteresis. The phase transition was characterised by means of differential scanning calorimetry, temperature‐dependent polarization microscopy and single‐crystal X‐ray diffraction. According to the observed features the transition can be classified as a non‐ferroic, martensitic phase transformation. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Magnetic and magnetostrictive behavior of Dy3+ doped CoFe2O4 single crystals grown by flux method

We studied the effect of Dy³⁺ content on the magnetic properties of cobalt ferrite single crystal. The single crystals of CoFe_1.9Dy_0.1O₄ were grown by the flux method using Na₂B₄O₇.10 H₂O (Borax) as a solvent (flux). The black and shiny single crystals were obtained as a product. The X-ray diffraction analysis at room temperature confirmed the spinel cubic structure with lattice constant a=8.42 Å of the single crystals. The compositional analysis endorses the presence of constituents Co, Fe and Dy elements after sintering at 1300 °C within the final structure. The magnetic hysteresis measurements at various temperatures viz. 10 K, 100 K, 200 K and 300 K reveal the soft ferrimagnetic nature of the single crystal than that of for pure CoFe₂O₄. The observed saturation magnetization (M_s) and coercivity (H_c) are found to be lower than that of pure CoFe₂O₄ single crystal. The magnetostriction (λ) measurement was carried out along the [001] direction. The magnetic measurements lead to conclude that the present single crystals can be used for magneto-optic recording media.     

Growth of Nd:Sr3Ga2Ge4O14 crystals by a modified Bridgman method

Bridgman growth of Nd:SGG (Sr₃Ga₂Ge₄O₁₄) crystals has been investigated for the first time. Pt crucible of ∅︁25mm×250mm with a seed well of ∅︁10mm×80 mm is used, and seed is SGG crystal of ∅︁10mm×50mm grown by Bridgman method in advance. The growth parameters are optimized as the furnace temperature is set to 1450∼1500°C, temperature gradient in the crystal‐melt interface is less than 25 K/cm and growth rate is less than 0.5mm/h. The Nd:SGG crystals with 25mm in diameter and 60mm in length are grown successfully from 1.5 to 8at% Nd³⁺ doped stoichiometric Sr₃Ga₂Ge₄O₁₄ melt. The distribution coefficient and concentration of Nd³⁺ in Nd:SGG crystals are obviously higher than those of Nd:YAG crystal. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of BPO4 single crystals from Li2Mo3O10 flux

Transparent single crystal of BPO₄ with a typical sizes of 5 × 7 × 9 mm³ have been grown by the top-seeded solution growth (TSSG) slow-cooling method using Li₂Mo₃O₁₀ as the flux. X-ray powder diffraction result shows that the as-grown crystal was well crystallized and indexed in a tetragonal system. The processing parameters and the effects of the flux on the crystal growth were investigated.     

Crystal structure of the new barium borate Ba5(BO3)2(B2O5)

The crystal structure of the new barium borate Ba₅(BO₃)₂(B₂O₅) is established (R = 0.0436). Single crystals were grown by spontaneous crystallization in the BaO-B₂O₃-Na₂O system using the flux method. This compound crystallizes in the orthorhombic system, sp. gr. P2₁2₁2₁; the unit-cell parameters are a = 9.590(2) Å, b = 16.659(3) Å, c = 22.919(6) Å, and Z = 12. The structure consists of coordination polyhedra of barium cations and the anionic groups [BO₃] (planar triangles) and [B₂O₅] (vertex-sharing double [BO₃] triangles), which form a pseudohexagonal framework. Melting of barium borate occurs by a peritectic reaction at 1170 ± 10°C.     

Reduction of grown-in dislocation density in Ge Czochralski-grown from the B2O3-partially-covered melt

Germanium (Ge) single crystals with an extremely low density of grown-in dislocations were grown by the Czochralski (CZ) technique with boron oxide (B₂O₃) liquid. Because attachment of particles floating on the melt surface to a growing Ge crystal leads to generation of dislocations during the growth, partial covering of the Ge melt surface with B₂O₃ liquid was attempted. Such attachment of particles was drastically suppressed or the particles were caught by the introduction of B₂O₃ liquid, and a particle-free Ge melt was realized in the central region of the melt surface. Ge single crystals were successfully grown from such melt, the grown-in dislocation density being 0–1×10³ cm⁻², which was remarkably lower than that in Ge crystals grown by a conventional CZ technique. The contaminations by B and O atoms of the grown crystal detected by SIMS analysis were very low. These Ge crystals have the potential for application to be applied as high-quality, dislocation-free substrates of GaAs solar cells for various usages including in space.     

Crystal structure and magnetic properties of the LaCo0.5Fe0.5O3 perovskite

The magnetic and crystal structures of the LaCo_0.5Fe_0.5O₃ perovskite are investigated. It is established that the unit cell of this compound at room temperature is characterized by rhombohedral distortions. As the temperature decreases, the compound undergoes a structural phase transition from the rhombohedral phase to the orthorhombic phase in the temperature range 200–300 K. The LaCo_0.5Fe_0.5O₃ perovskite has an antiferromagnetic structure with the G _z spatial orientation of the antiferromagnetic vector. The magnetic properties of the LaCo_0.5Fe_0.5O₃ perovskite are interpreted within a model according to which the ground state of Co³⁺ ions is a low-spin state and the existence of the weak ferromagnetic component is associated with the exchange interactions between the Fe³⁺ ions.     

Effects of tantalum doping on microstructure and ferroelectric properties of Bi4Ti3O12 thin films prepared by a sol–gel method

Tantalum-substituted Bi₄Ti₃O₁₂ (Bi₄Ti_3-x/5Ta_x/5O₁₂, BTTO) thin films were fabricated on Pt(111)/Ti/SiO₂/Si(100) substrates by sol–gel technology. The effects of various processing parameters, including Ta content (x=0～0.08) and annealing temperature (500～800 °C), on the growth and properties of thin films were investigated. X-ray diffraction analysis shows that the BTTO thin films have a bismuth-layered perovskite structure with preferred (117) orientation. With the increase of Ta content, the grain size of film decreased slightly, and highly (117)-oriented BTTO films were obtained in the composition of x=0.06. Ta doping on the B-site of Bi₄Ti₃O₁₂ could induce the distortion of oxygen octahedral and decrease the oxygen vacancy concentration by a compensating effect. The highly (117)-oriented BTTO thin films with x=0.06 exhibits the maximum remanent polarization (2P_r) of 50 μC/cm² and a low coercive field (2E_c) of 104 kV/cm, fatigue free characteristics up to ≧ 10⁸ switching cycles.     

Crystal growth and spectral properties of Nd:Ca5(BO3)3F

A neodymium doped Ca₅(BO₃)₃F single crystal with size up to 51×48×8 mm³ has been grown by the top seeded solution growth (TSSG) technique with a Li₂O‐B₂O₃‐LiF flux. The spectra of absorption and fluorescence were measured at room temperature. According to Judd‐Ofelt (J‐O) theory, the spectroscopic parameters were calculated and the J‐O parameters Ω₂, Ω₄, Ω₆ were obtained as follows: Ω₂ = 1.41×10⁻²⁰cm², Ω₄ = 3.18×10⁻²⁰cm², Ω₆ = 2.11×10⁻²⁰cm². The room temperature fluorescence lifetime of NCBF was measured to be 51.8 μs. According to the J‐O paramenters, the emission probabilities of transitions, branching ratios, the radiative lifetime and the quantum efficiency from the Nd^{3+ 4}F_3/2 metastable state to lower lying J manifolds were also obtained. In comparasion with other Nd‐doped borate crystals, the calculated and experimental parameters show that NCBF is a promising SFD crystal.     

Crystal Growth of Boron Sillenite Bi24B2O39

The Sillenite type Bi₂₄B₂O₃₉ is an incongruently melting compound at T_p = 650 °C. Single crystals have been grown from non-stoichiometric melts as well as from high temperature solutions by the Czochralski method and by a top seeded solution growth technique (TSSG), respectively. The main difficulty in the crystal growth of Bi₂₄B₂O₃₉ arises from the very small field of crystallization in the binary system Bi₂O₃–B₂O₃. Further problems are caused by the nearly simultaneous formation of the 2:1 compound Bi₄B²O₉ and the 12:1 compound Bi₂₄B₂O₃₉. Therefore, a precise thermal reinvestigation of the phase diagram was carried out using DTA-technique on the Bi₂O₃-rich side. Additionally, crystal growth runs have been started in the ternary system Bi₂O₃–B₂O₃–Li₂O in order to extend the crystallization field. Homogeneous melts were more difficult to prepare because of the high density difference between Bi₂O₃ (∂ = 9.3 g/cm³) and B₂O₃ (∂ = 2.46 g/cm³). The homogeneity of the melts were improved, using Bi₂O₃ and synthesized Bi₄B₂O₉ (∂ = 8.25 g/cm³) as starting materials. As a result of this procedure, small crystals of Bi₂₄B₂O₃₉ were grown from these starting materials and the lattice parameter were determined.     

Specific features of the flux growth of bulk crystals of high-temperature modification of BaB2O4

High-quality single crystals of the high-temperature phase of barium metaborate (α-BaB₂O₄) up to 100–120 g in weight are grown from a flux in the ternary system BaO-B₂O₃-Na₂O. The growth temperature is below the α → β phase transition temperature. The conditions necessary for growing α-BaB₂O₄ crystals under metastable conditions are determined and the morphology and optical quality of the crystals grown are investigated.     

Growth and structure of α-Bi2B8O15 crystals

α-Bi₂B₈O₁₅ crystals (5-to 7-mm-thick, 2.7 × 2.7 cm² in cross section) have been grown by the Czochralski method from a melt of stoichiometric (Bi₂O₃: B₂O₃ = 20: 80) and nonstoichiometric (Bi₂O₃: B₂O₃ = 21.9: 78.1) compositions. It is established that there is a solid-solution range from 78.1 to 84.7 mol % B₂O₃ for α-Bi₂B₈O₁₅. The structure of a Bi₂(B₈O₁₅)(Bi₂O₃)_0.06 crystal, which was grown from a melt of nonstoichiometric composition and is an interstitial solid solution, has been refined (sp. gr. P2₁).     

Flux growth and morphology analysis of Na3VO2B6O11 crystals

Colorless and transparent Na₃VO₂B₆O₁₁ (NVB) crystal has been grown by the top seeded solution growth method using NaVO₃ as the flux at cooling rates of 0.8–1.5 °C/day, in the temperature range 610–650 °C. A well-developed morphology of the crystals was observed and analyzed. The grown crystals were characterized by powder X-ray diffraction (PXRD), infrared spectroscopy and second harmonic generation (SHG) test.