Thermoelectric power and phase transition of polycrystalline As2Te3 under pressure

The pressure dependence of the thermoelectric power of monoclinic As₂Te₃ is measured up to 10 GPa using a Mao-Bell diamond anvil cell. The thermoelectric power never reaches an absolute value greater than the ambient pressure value of 242 μV/K. Evidence of a phase transition is present between 6 and 8 GPa where the thermoelectric power reaches an absolute value of 225 μV/K after passing through a minimum of S≈75 μV/K. X-ray diffraction experiments confirm that the resulting structure is β-As₂Te₃, which is isostructural with Bi₂Te₃ and Sb₂Te₃.     

A high-pressure Raman and X-ray diffraction study of the perovskite SrCeO3

A high-pressure structural study of SrCeO₃ has been performed at room temperature by Raman spectroscopy and X-ray diffraction up to 32 and 45 GPa, respectively. A first-order reversible phase transition is observed at about 12 GPa in both techniques. A second weak structural change, taking place between 18 and 25 GPa, can be suspected from Raman data. The increase in the number of Raman bands and diffraction lines is an indication that the symmetry is lowered and the compound does not evolve towards the ideal cubic perovskite structure. A Rietveld analysis of X-ray data was performed for the low-pressure phase and the atomic positions and the cell lattice parameters variations are reported in this paper. The volume compressibility derived from Raman modes (5.6×10⁻¹² Pa⁻¹), involving mainly bond-stretching for each type of polyhedron, is found to be close to the one obtained from volume cell variations measured by X-ray diffraction (7.9×10⁻¹² Pa⁻¹).     

Thermoelectric properties of Bi0.9Sb0.1 prepared by high pressure

The Bi_0.9Sb_0.1 powders were prepared by mechanical alloying and then pressed under 6 GPa at different pressing temperatures. X-ray diffraction spectra showed that the single phase was formed. The nanostructure of grain was observed by bright-field imaging. Electrical conductivity, Seebeck coefficient, and thermal conductivity had been investigated in the temperature range of 80-300 K. The absolute Seebeck coefficient value of 120.3 μV/K was measured at 130 K. The figure-of-merit reached a maximum value of 0.90×10⁻³ K⁻¹ at 140 K.     

Thermal equation-of-state of osmium: a synchrotron X-ray diffraction study

The pressure-volume-temperature behavior of osmium was studied at pressures and temperatures up to 15 GPa and 1273 K. In situ measurements were conducted using energy-dispersive synchrotron X-ray diffraction in a T-cup 6-8 high pressure apparatus. A fit of room-temperature data by the third-order Birch-Murnaghan equation-of-state yielded isothermal bulk modulus K₀=435(19) GPa and its pressure derivative K′₀=3.5(0.8) GPa. High-temperature data were analyzed using Birch-Murnaghan equation of state and thermal pressure approach. The temperature derivative of bulk modulus was found to be −0.061(9) GPa K⁻¹. Significant anisotropy of osmium compressibility was observed.     

Ionic to electronic dominant conductivity in Al2(WO4)3 at high pressure and high temperature

Electrical conduction and crystal structure of Al₂(WO₄)₃ at 400 °C have been studied as a function of pressure up to 5.5 GPa using impedance methods and synchrotron radiation X-ray diffraction, respectively. AC impedance spectroscopy and DC polarization measurements reveal an ionic to electronic dominant transition in electrical conductivity at a pressure as low as 0.9 GPa. Conductivity increases with pressure and reaches a maximum at 4.0 GPa, where the conductivity value is 5 orders of magnitude greater than the 1 atm value. Upon decompression, the conductivity retains the maximum value until the sample is cooled at 0.5 GPa. The high pressure-temperature X-ray diffraction results show that the lattice parameters decrease as pressure increases and the crystal structure undergoes an orthorhombic to tetragonal-like transformation at a pressure ∼3.0 GPa. The change of conduction mechanism from ionic to electronic may be explained by means of pressure-induced valence change of W⁶⁺→W⁵⁺, which results in electron transfer between W⁵⁺-W⁶⁺ sites at high pressure.     

X-ray diffraction study of molybdenum diselenide to 35.9 GPa

In situ high-pressure angle dispersive synchrotron X-ray diffraction studies of molybdenum diselenide (MoSe₂) were carried out in a diamond-anvil cell to 35.9 GPa. No evidence of a phase transformation was observed in the pressure range. By fitting the pressure-volume data to the third-order Birch-Murnaghan equation of state, the bulk modulus, K_0T, was determined to be 45.7±0.3 GPa with its pressure derivative, K′_0T, being 11.6±0.1. It was found that the c-axis decreased linearly with pressure at a slope of −0.1593 when pressures were lower than 10 GPa. It showed different linear decrease with the slope of a −0.0236 at pressures higher than 10 GPa.     

Measurement of Seebeck effect (thermoelectric power) at high pressure up to 40 GPa

The paper reports details of a high-pressure thermoelectric power (Seebeck effect) technique up to 40 GPa. Several different types of high-pressure cells with anvil insets are presented. The technique was applied for measurements of pressure dependence of the thermopower of several substances including elemental metals (lead, Pb; indium, In), cerium-nickel alloy, Ce-Ni and sulphur, S. Two peculiarities in the pressure dependences of the thermopower of CeNi were found and attributed to structural transformations, near ∼5 and ∼10 GPa. These transitions were confirmed in direct X-ray diffraction studies. Sulphur compressed to 40 GPa exhibited a hole type conductivity and the thermopower value was about ∼+1 mV/K. Additionally, as an example of pressure calibration, the data on the electrical resistivity of zinc selenide, ZnSe, are given in a range of 0-23 GPa. These data suggest three possible scenarios of phase transitions from a rock salt (RS) high-pressure phase of ZnSe under decompression: RS→zinc blende (ZB), RS→cinnabar→ZB, and RS→wurtzite.     

The band gap and electrical resistivity of FeS2-pyrite at high pressures

The indirect energy gap and electrical resistivity of FeS₂-pyrite have been measured at high pressures and 300 K using optical absorption spectroscopy and electrical conductivity measurements. Absorption spectra extend to ∼28 GPa, while resistivity is determined to ∼34 GPa. The band gap of FeS₂ is indirect throughout this pressure range and decreases linearly with pressure at a rate of −1.13(9)×10⁻² eV/GPa. If this linear trend continues, FeS₂ is expected to metallize at a pressure of 80(±8) GPa. The logarithm of resistivity also linearly decreases with pressure to 14 GPa with a slope of −0.101(±0.001)/GPa. However, between 14 and 34 GPa, the logarithm of resistivity is nearly constant, with a slope of −0.011(±0.003)/GPa. The measured resistivity of pyrite may be generated predominantly by extrinsic effects.     

In situ X-ray observation of phase transformation in Fe2O3 at high pressures and high temperatures

A laser-heated sample in a diamond anvil cell and synchrotron X-ray radiation was used to carry out structural characterization of the phase transformation of Fe₂O₃ at high pressures (30-96 GPa) and high temperature. The Rh₂O₃(II) (or orthorhombic perovskite) structure transforms to a new phase, which exhibits X-ray diffraction data that are indicative of a CaIrO₃-type structure. The CaIrO₃-type structure exhibited an orthorhombic symmetry (space group: Cmcm) that was stable at temperatures of 1200-2800 K and pressure of 96 GPa (the highest pressure used). Unambiguous assignment of such a structure requires experimental evidence for the presence of two Fe species. Based on the equation of state of gold, the phase boundary of the CaIrO₃-type phase transformation was P (GPa)=59+0.0022×(T−1200) (K).     

Pressure dependence of the optical-absorption edge of AlN and graphite-type BN

Effect of pressure on the band gaps on AlN and graphite-type BN (g-BN) has been studied up to 2.7 GPa at room temperature by measuring the optical-absorption edge of single crystals of each substance pressurized in a sapphire-anvil cell. The direct band gap of AlN shifted towards higher energy at a rate of 49±1 meV/GPa, whereas in g-BN the pressure dependence of the band gap was −36±1 meV/GPa. The results are compared with existing first-principles calculations.     

Investigation of the pressure dependence of band gaps for silver halides within a first-principles method

The pressure dependence of the direct and indirect band gaps in rocksalt silver halides has been studied using the full-potential linearized augmented plane wave method within the generalized gradient approximation for the exchange-correlation potential. It is found that indirect band gaps (L→X and L→Γ) exhibit different responses to application of pressure. Similar trends are found for the indirect band gaps of AgCl and AgBr while the trend in AgI (L→Γ) band gap is different. In all the compounds, the effect of pressure on the direct band gaps (Γ→Γ, X→X and L→L) show qualitatively similar results. The fundamental indirect band gap (L→Γ) pressure coefficients are −4.19 meV (GPa)⁻¹ and −3.81 meV (GPa)⁻¹ for AgCl and AgBr while for AgI (L→X) it is −61.50 meV (GPa)⁻¹. The band gap pressure coefficient as well as the volume deformation potential for the various band gaps of the compounds have also been investigated.     

High pressure equation of state studies using methanol-ethanol-water and argon as pressure media

We have measured the equation of state of the intermetallic compound AuIn₂ up to 20 GPa and Cd_0.8Hg_0.2 up to 50 GPa using methanol-ethanol-water solution or argon as pressure media. In the experiments performed with argon as pressure medium, we minimized non-hydrostatic conditions by thermally annealing the sample. We present data revealing compressibility anomalies in AuIn₂ at 2.7 GPa and in Cd_0.8Hg_0.2 near 8, 18 and 34 GPa with methanol-ethanol-water and argon. At pressures above 5 GPa the P-V data for AuIn₂ and Cd_0.8Hg_0.2 from experiments preformed with argon as a pressure medium start deviating from those using methanol-ethanol-water, and the equation of state based on experiments in argon is stiffer compared with that in methanol-ethanol-water. This behavior is consistent with the relative merits of the two pressure transmitting media as documented in the literature. We also provide a brief summary of the results of electronic structure calculations that associate these anomalies with electronic topological transitions.     

In situ observations of temperature- and pressure-induced phase transitions in TiH2: Angle-dispersive and synchrotron energy-dispersive X-ray diffraction studies

We investigated the behavior of the structure of titanium hydride (TiH₂), an important compound in hydrogen storage research, at elevated temperatures (0-120 °C) and high pressures (1 bar-34 GPa). Temperature-induced changes of TiH₂ as indicated in the alteration of the ambient X-ray demonstrated a cubic to tetragonal phase transition occurring at about 17 °C. The main focus of this study was to identify any pressure-induced structural transformations, including possible phase transitions, in TiH₂. Synchrotron X-ray diffraction studies were carried out in situ (diamond anvil cell) in a compression sequence up to 34 GPa and in subsequent decompression to ambient pressure. The pressure evolution of the diffraction patterns revealed a cubic (Fm-3m) to tetragonal (I4/mmm) phase transition at 2.2 GPa. The high-pressure phase persisted up to 34 GPa. After decompression to ambient conditions the observed phase transition was completely reversible. A Birch-Murnaghan fit of the unit cell volume as a function of pressure yielded a zero-pressure bulk modulus K₀=146(14) GPa, and its pressure derivative K′₀=6(1) for the high-pressure tetragonal phase of TiH₂.     

Texture of bismuth telluride-based thermoelectric semiconductors processed by high-pressure torsion

P-type Bi₂Te₃-based thermoelectric semiconductors were prepared, having a grain-refined microstructure and a preferred orientation of anisotropic crystallographic structure. Disks with a nominal composition of Bi_0.5Sb_1.5Te_3.0 were cut from an ingot grown by the vertical Bridgman method (VBM) and deformed at 473 K under a pressure of 6.0 GPa by high-pressure torsion (HPT). The crystal orientation was characterized by X-ray diffraction. The microstructures were characterized using optical microscopy and scanning electron microscopy (SEM). It was found that the HPT disks had a fine and preferentially oriented grain compared to that of the VBM disks. Further, the power factor of the HPT disks was about twice as large as that of the VBM disks. These results indicate that HPT is effective in improving the thermoelectric properties of Bi₂Te₃-based thermoelectric semiconductors.     

Structure and properties of DLC–MoS2 thin films synthesized by BTIBD method

Diamond-like carbon (DLC)–MoS₂ composite thin films were synthesized using a biased target ion beam deposition (BTIBD) technique in which MoS₂ was produced by sputtering a MoS₂ target using Ar ion beams while DLC was deposited by ion beam deposition with CH₄ gas as carbon source. The structure and properties of the synthesized films were characterized by X-ray diffraction, X-ray absorption near edge structure (XANES), Raman spectroscopy, nanoindentation, ball-on-disk testing, and corrosion testing. The effect of MoS₂ target bias voltage, ranging from −200 to −800 V, on the structure and properties of the DLC–MoS₂ films was further investigated. The results showed that the hardness decreases from 9.1 GPa to 7 GPa, the Young?s modulus decreases from 100 GPa to 78 GPa, the coefficient of friction (COF) increases from 0.02 to 0.17, and the specific wear rate coefficient (k) increases from 5×10⁻⁷ to 5×10⁻⁶ mm³ N⁻¹ m⁻¹, with increasing the biasing voltage from 200 V to 800 V. Also, the corrosion resistance of the DLC–MoS₂ films decreased with the raise of biasing voltage. Comparing with the pure DLC and pure MoS₂ films, the DLC–MoS₂ films deposited at low biasing voltages showed better tribological properties including lower COF and k in ambient air environment.     

High pressure X-ray diffraction study of ReS2

The high-pressure behavior of rhenium disulfide (ReS₂) has been investigated to 51.0 GPa by in situ synchrotron X-ray diffraction in a diamond anvil cell at room temperature. The results demonstrate that the ReS₂ triclinic phase is stable up to 11.3 GPa, at which pressure the ReS₂ transforms to a new high-pressure phase, which is tentatively identified with a hexagonal lattice in space group P6?m2. The high-pressure phase is stable up to the highest pressure in this study (51.0 GPa) and not quenchable upon decompression to ambient pressure. The compressibility of the triclinic phase exhibits anisotropy, meaning that it is more compressive along interlayer directions than intralayer directions, which demonstrates the properties of the weak interlayer van der Waals interactions and the strong intralayer covalent bonds. The largest change in the unit cell angles with increasing pressures is the increase of β, which indicates a rotation of the sulfur atoms around the rhenium atoms during the compression. Fitting the experimental data of the triclinic phase to the third-order Birch-Murnaghan EOS yields a bulk modulus of K_OT=23±4 GPa with its pressure derivative K_OT′= 29±8, and the second-order yields K_OT=49±3 GPa.     

High pressure investigation on double perovskite Ba2MgWO6

The results of high-pressure angle dispersive X-ray diffraction measurements up to 34.3 GPa on the double perovskite Ba₂MgWO₆ are presented. The ambient rock salt phase (SG: Fm-3m) is found to be stable up to the highest pressure of the present measurements. The third order Birch-Murnaghan equation of state when fitted to pressure-volume data, yielded a zero pressure bulk modulus (B₀),and its first and second pressure derivatives as 137.0(81) GPa, and 3.9(5) and −0.03 GPa⁻¹, respectively.     

Low-temperature thermoelectric properties of Bi85Sb15−xNbx alloys prepared by high-press sintering

The nanocrystalline materials with the general formula Bi₈₅Sb_15−xNb_x (x=0, 0.5, 1, 2, 3) were prepared by mechanical alloying and subsequent high-pressure sintering. Their transport properties involving electrical conductivity, Seebeck coefficient and thermal conductivity have been investigated in the temperature range of 80-300 K. The absolute value of Seebeck coefficient of Bi₈₅Sb₁₃Nb₂ reaches a maximum of 161 μV/K at 105 K, which is 69% larger than that of Bi₈₅Sb₁₅ at the same temperature. The power factor and figure-of-merit are 4.45×10⁻³ WK⁻²m⁻¹ at 220 K and 1.79×10⁻³ K⁻¹ at 196 K, respectively. These results suggest that thermoelectric properties of Bi₈₅Sb₁₅ based material can be improved by Nb doping.     

In situ high-pressure X-ray diffraction study of densification of a molecular chalcogenide glass

Structural mechanisms of densification of a molecular chalcogenide glass of composition Ge_2.5As_51.25S_46.25 have been studied in situ at pressures ranging from 1 atm to 11 GPa at ambient temperature as well as ex situ on a sample quenched from 12 GPa and ambient temperature using high-energy X-ray diffraction. The X-ray structure factors display a reduction in height of the first sharp diffraction peak and a growth of the principal diffraction peak with a concomitant shift to higher Q-values with increasing pressure. At low pressures of at least up to 5 GPa the densification of the structure primarily involves an increase in the packing of the As₄S₃ molecules. At higher pressures the As₄S₃ molecules break up and reconnect to form a high-density network with increased extended-range ordering at the highest pressure of 11 GPa indicating a structural transition. This high-density network structure relaxes only slightly on decompression indicating that the pressure-induced structural changes are quenchable.     

High pressure X-ray diffraction study on icosahedral boron arsenide (B12As2)

The high pressure properties of icosahedral boron arsenide (B₁₂As₂) were studied by in situ X-ray diffraction measurements at pressures up to 25.5 GPa at room temperature. B₁₂As₂ retains its rhombohedral structure; no phase transition was observed in the pressure range. The bulk modulus was determined to be 216 GPa with the pressure derivative 2.2. Anisotropy was observed in the compressibility of B₁₂As₂—c-axis was 16.2% more compressible than a-axis. The boron icosahedron plays a dominant role in the compressibility of boron-rich compounds.