Electrically Detected Magnetic Resonance Signal Intensity at Resonant Frequencies from 300 to 900 MHz in a Constant Microwave Field

A method for electrically detected magnetic resonance (EDMR) measurement at different ESR frequencies under a constant alternating magnetic field has been established wherein the accurate relationship between EDMR signal intensity (from a photoexcited silicon crystal and a silicon diode) and a resonant frequency of 300 to 900 MHz (UHF band) was systematically clarified. EDMR signal intensity from a photoexcited silicon crystal against a resonant frequency fitted the curve of y = a(1 - e(-bx)) well, which approached a constant value at higher frequencies. The increase in the EDMR signal intensity from the silicon diode at higher resonant frequencies was smaller than that from the photoexcited silicon crystal. The difference can be explained by the influence of the skin effect; i.e., the microwaves do not penetrate deep into a highly conductive sample at higher frequencies. EDMR signal intensities of samples vs microwave power were measured at 890 MHz. The EDMR signal intensity from the silicon diode continued to increase as the microwave power was increased, while the signal intensity from the photoexcited silicon crystal saturated within the range. The difference can be similarly explained: due to the skin effect, the microwaves gradually penetrate into the silicon diode as the power increases, so that even when saturation has been reached outside, the microwave field inside the diode does not reach the saturation level.     

Non-destructive observation of electrically detected magnetic resonance in bulk material using AC bias

DC bias is normally found in conventional measurements of electrically detected magnetic resonance (EDMR). Usually, electrodes are formed on the sample surface to make ohmic contacts for detecting changes in the electrical characteristics of the sample material. Thus, destructive procedures are required to detect the EDMR signal of bulk material with such methods. An AC bias detection technique was developed to allow the non-destructive EDMR measurement of bulk materials. An AC bridge circuit was constructed to detect the change in impedance of the sample, which when changed by ESR, an unbalanced AC voltage can be detected. By detecting this AC bias, it is possible to cancel the effects, such as Shottky barriers, that disturb the ohmic contact between the electrodes and a sample material. Further, the AC bias current penetrates the thin surface layer of a sample such as silicon oxide, which normally obstructs a DC current. This method was utilized using conductive rubber contacts for non-destructive EDMR measurements of part of a silicon wafer. EDMR spectra observed were the same as those obtained by the conventional method of using DC bias detection.     

Preparation of silicon carbide film by a plasma focus device

Silicon carbide (SiC) films were grown on the silicon (100) substrate by a 20 kJ Mather-type dense plasma focus device. The preparation method and characterization data are presented. X-ray diffractometer (XRD), Fourier transform infrared spectroscopy (FTIR), field-emission scanning electron microscopy (SEM) and nano-indentor were employed for the characterization of the samples obtained at different axial position of 50 mm, 90 mm, 130 mm and 170 mm, respectively. Polycrystalline 3CSiC were obtained at the position of 90 mm and 130 mm from XRD and FTIR spectra. SEM image showed that the silicon carbide films obtained at the position of 90 mm are porous on surface layer. Nano-indentor indicates that the film obtained at the position of 130 mm has the highest mechanical hardness.     

On the origin of exciton formation in dye doped Alq3 OLEDs

Electrically Detected Magnetic Resonance (EDMR) was used to investigate the influence of dye doping on spin-dependent exciton formation in aluminum (III) 8-hydroxyquinoline (Alq₃) based Organic Light Emitting Diodes (OLEDs) with different device structures. 4-(dicyanomethylene)-2-methyl-6-{2-[(4-diphenylamino)-phenyl]ethyl}-4H-pyran (DCM-TPA) and 5,6,11,12-tetraphenylnaphthacene (Rubrene) were used as dopants. Results at room temperature show significant differences on the EDMR spectra (g-factor and linewidth) of doped and undoped devices. Signals from DCM-TPA and Rubrene dye doped OLEDs showed strong temperature dependence, with signal intensity increasing by 2 orders of magnitude below 200 K for DCM-TPA dye doped OLEDs and increasing by ～1 order of magnitude below 225 K for the Rubrene dye doped device, while undoped devices shows almost no temperature dependence. By adding a “spacer” layer of undoped Alq₃ at the recombination zone, changes in bias voltage were used to shift the recombination from doped to undoped region and correlate that with changes in the EDMR spectrum. Our results are indicating that charge trapping on the dopant followed by recombination is the main mechanism of light emission in the investigated devices.     

Laser ultrasonic characterization of adhesive bonds between epoxy coating and aluminum substrate

Nanosecond pulsed laser irradiation through transparent epoxy bonded to aluminum substrate excites wide-band ultrasonic waves at the bonded interface. The normal displacements on the rear surface of aluminum produced by the direct and multi-reflected longitudinal waves in the coating layer are detected by a laser interferometer. The amplitude of the reflected signal depends on the properties of the coating/substrate interface, which is described by terms of the interfacial stiffness using a spring boundary model. The waveforms at the epicenter versus interfacial stiffness are simulated and found to be in good agreement with experimental results. The relation between the interfacial stiffness and the amplitude ratio of the reflected and direct waves is thus established. An image of amplitude ratio of a specimen (null 10 mm) is obtained from the epicenter waveforms recorded by a laser ultrasonic scanning system, which shows the distribution of bond quality on the bonding interface.     

Unilateral MRI using a rastered projection

Unilateral magnetic resonance techniques, where magnet and radio frequency (RF) coil are placed on one side of the sample, can provide valuable information about a sample which otherwise cannot be accommodated in conventional high spectral resolution magnetic resonance systems. A unilateral magnetic resonance imaging approach utilizing the stray field from a disc magnet and a butterfly geometry RF coil is described. The coil excites spins in a volume centered around an arc through the sample. Translating the RF coil relative to the magnet and recording the signal at each translational location creates a projection of the signal in a tomographic slice through the sample. Rotating the RF coil relative to the sample and repeating the translation creates projections through the sample at different angles. Backprojecting this information yields an image. A proof of concept device operating on this principle at 12.4 MHz was constructed and characterized. Projections through three phantoms are presented with a 1.2-4 cm field of view, thickness of 102 microm, and at a distance of 3mm from the RF coil and 14 mm from the magnet. The edge spread function (ESF) was measured resulting in a 4mm full width at half maximum (FWHM) line spread function (LSF) estimation using a Gaussian model. An example of one reconstructed image is presented.     

基于声透镜的三维光声成像技术

基于声透镜的光声成像系统中, 由样品的光声压分布等效样品的吸收分布, 进行光声像重建, 但之前的这种等效是一种近似, 理论上并不准确. 本文阐述了声透镜三维光声成像的基本原理, 揭示了声透镜像面上光声压信号的时间分布与样品轴向吸收分布之间的关系; 提出用积分法和希尔伯特变换提取光声信号瞬时值法, 解调样品吸收系数分布并重建光声像; 实验上, 对不同样品分别用积分法和希尔伯特变换法获取样品的吸收系数, 重建光声像的横向和轴向分辨率均约为1 mm, 实现了真正的三维快速光声成像.     

One-dimensional diffusion of vacancies on Sr/Si(100)-c(2×4) surface

An Sr/Si(100)-c(2×4) surface is investigated by high-resolution scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The semiconductor property of this surface is confirmed by STS. The STM images of this surface shows that it is bias-voltage dependent and an atomic resolution image can be obtained at an empty state under a bias voltage of 1.5 V. Furthermore, one-dimensional (1D) diffusion of vacancies can be found in the room-temperature STM images. Sr vacancies diffuse along the valley channels, which are constructed by silicon dimers in the surface. Weak interaction between Sr and silicon dimers, low metal coverage, surface vacancy, and energy of thermal fluctuation at room temperature all contribute to this 1D diffusion.     

Optical harmonic generation in amorphous silicon nitride microcavities

Second harmonic (SH) and third harmonic (TH) generation in amorphous silicon nitride microcavity are experimentally investigated. The transmitted SH and TH signals are measured in the 0.9-1.4 μm spectral range, showing enhanced nonlinear conversion efficiency corresponding to resonant wavelength and optical band edges. The efficiencies of the SH and TH generation processes are found to be enhanced by about two and one orders of magnitude, respectively, in comparison with the case of reference amorphous silicon nitride sample. The SH spectra can be reasonably interpreted as due to surface/interface harmonic generation, while the TH signal is related to bulk isotropic third-order polarization. The results obtained for the TH signal are discussed in terms of the linear optical properties of amorphous silicon nitride thin films.     

Structure and morphology of Cu/Ni film grown by electrodeposition method: A study of neutron reflectivity and AFM

We present detailed study of structure and interface morphology of an electrodeposited Cu/Ni film using X-ray diffraction, X-ray reflectivity, neutron reflectivity and atomic force microscopy (AFM) techniques. The crystalline structure of the film has been determined by X-ray diffraction, which suggest polycrystalline growth of the film. The depth profile of density in the sample has been obtained from specular X-ray and neutron reflectivity measurements. AFM image of the air-film interface shows that the surface is covered by globular islands of different sizes. The AFM height distribution of the surface clearly shows two peaks and the relief structure (islands) on the surface in the film, which can be treated as a quasi-two-level random rough surface structure. We have demonstrated that the detailed morphology of air-film interfaces, the quasi-two-level surface structure as well as morphology of the buried interfaces can be obtained from off-specular neutron reflectivity data. AFM and off-specular neutron reflectivity measurements also show that the morphologies of electrodeposited surface is distinctively different as compared to that of sputter-deposited surfaces in the sample.     

Light and thermally induced metastabilities in electrochemically etched nanocrystalline porous silicon

We observe that light soaking for short durations and thermal quenching in nanocrystalline porous silicon (PS) produce metastable states. These metastable states show higher dark and photo currents, large photoluminescence and a weaker electron spin resonance (ESR) signal. However, long exposures to light produce the opposite effect. The metastable states are stable against sub-band gap light exposures. These metastable states can be removed by annealing at 150°C for 1 h. ESR shows the presence of a-Si phase (g ～ 2.0058, 6.4 G) in PS sample, but it is not sufficient to explain all the experimental results. Rather, our experiments suggest that light soaking causes more than one type of defects in porous silicon. The structural changes involving the movement of hydrogen present at the surface of PS or at the PS/a-Si interface may be responsible for these effects.     

利用光斑图像特征确定飞秒激光有效烧蚀焦距

为确定飞秒激光光束对微尺度结构的烧蚀深度,研究了给定功率条件下对应的激光束有效烧蚀焦距。提出采用激光焦点处获得的烧痕阵列图像及在离焦状态下提取烧痕图像特征,通过分析图像特征与离焦距离,获得激光束有效烧蚀焦距范围的方法。在激光束焦点附近的硅晶片表面烧蚀出斑痕阵列,向下逐渐减小焦距,采集硅晶片斑痕图像,提取斑痕平均像素面积及斑痕目标与背景之间的R分量灰度差,获得斑痕像素面积及灰度差随激光束焦距变化的曲线;向上逐渐增大焦距,提取并获得斑痕像素面积及灰度差随激光束焦距变化的曲线。结合激光束向下离焦阈值(633 μm)及向上离焦阈值(993 μm),确定20 mW输出功率条件下,飞秒激光在硅晶片材料表面的有效烧蚀深度为360 μm。采用中位值方法确定了激光束在硅晶片表面聚焦时的焦距为0.823 mm。实验表明,激光烧蚀斑痕像素面积及灰度差与激光束焦距之间的关系能够客观地反映激光束有效烧蚀焦距的变化范围。     

共振离子化质谱在高纯材料表面杂质分析中的应用

用激光熔出－共振离子化质谱法测定纯铁中及高纯硅片表面的铬。测定含有１０１２原子／ｃｍ２Ｃｒ的信号强度表明本方法可测定低至１０９原子／ｃｍ２的样品，其空间分辨率为０．２ｍｍ，还可进行二维杂质元素分析。     

Imaging elastic property of surfaces at nanoscale using atomic force microscope

We present a simple technique to characterize and image the distribution of local elastic property using ultrasonic atomic force microscope (UAFM). We interpret the UAFM images using simple arguments. We have demonstrated the capability of the UAFM technique to image the distribution of the local elastic property of the sample surface and semi-quantitatively map the local stiffness of the sample surface using a few selected samples. The local stiffness of the sample surface was obtained by measuring the changes in the frequency of contact resonance peak values and could verify the same using force-distance measurement at the same regions on the sample surface.     

Nondestructive evaluation of cylindrical parts using laser ultrasonics

We applied the laser ultrasonic technique for detecting surface breaking slots in steel cylinders (25 mm in diameter). The observation of the detected signal over a long time (500 micros), shows that the interaction of the two contra-propagating incident Rayleigh waves reinforce the echoes coming from the defect. These echoes are slowly growing with time whereas the main signals decrease. This energy transfer occurring at each revolution of the waves around the cylinder allows the detection of cracks having a depth (h approximately 80 microm), very small compared to the Rayleigh wavelength (lambda approximately 2 mm). The evaluation of the material was performed by processing the detected signal in a sliding time window. A cross-correlation is made either between a reference signal and the signal from the tested sample or between two signals probed for two different positions of the sample. In both cases, the slope of the cross-correlation coefficient versus the number of turns is proportional to the depth of the slot.     

Determination of diffusion length in photovoltaic crystalline silicon by modelisation of light beam induced current

The diffusion length of minority carriers is one of the most important electrical parameters to qualify silicon for photovoltaic applications. One way to evaluate this parameter is to analyse the decay of the current induced when a focused beam is scanned away from the collector using Light Beam Induced Current (LBIC) technique. The LBIC signal was numerically calculated with 2D-DESSIS software under different boundary conditions, as a function of material thickness and surface recombination velocity in order to verify the limitations of analytical models and to fit the LBIC signal measured in thin silicon samples. Samples with thickness ranging from 55 μm to 2500 μm were evaluated with diffusion length values ranging from 70 μm to 2.5 mm. Analytical expressions of the Internal Quantum Efficiency (IQE) were also used to extract the minority carrier bulk and effective diffusion lengths from surface averaged spectral response and reflectivity data in thick solar cells.     

Photoelectronic characterization of n-type silicon wafers using photocarrier radiometry

Photocarrier radiometry (PCR) was used to characterize four n-type silicon wafers with different resistivity values in the 1-20 Ω cm range. Simulations of the PCR signal have been performed to study the influence of the recombination lifetime and front surface recombination velocity on them; besides, the transport parameters (carrier recombination lifetime, diffusion coefficient, and frontal surface recombination) of the wafers were obtained by means of a fitting procedure. The PCR images that are related to the lifetime are presented, and the first photoelectronic images of a porous silicon sample are obtained.     

Design of optical system for head-mounted micro-display

Assembling one optical imaging system with 0.56″ liquid crystal on silicon (LCOS), we achieved one practical head-mounted micro-display system for civilian applications. The optical system consists of three refractive elements and one binary surface. It has a 32° field of view (FOV), a 10 mm exit pupil diameter, and a 20 mm eye clearance distance. Compared with the traditional optical system, the hybrid refractive/diffractive system has a longer working distance and can be used in higher resolution display with better image quality. Designing results indicate that the introducing of binary element in the system with smaller FOV could improve the image quality dramatically.     

Probing of the multilayer Si/SiGe structure with a flux of nonequilibrium acoustic phonons

The Si/Si_0.8Ge_0.2/Si double quantum wells grown on a silicon substrate were probed in the reflection geometry with a flux of terahertz nonequilibrium acoustic phonons produced by the heat pulse technique. A comparison of the detected phonon arrival signals with those obtained under similar conditions from a silicon sample without a quantum well structure permits one to isolate the component due to the phonon reflection from quantum wells. This reflected signal was found to be strongly anisotropic.     

Photoacoustic spectroscopy analysis of silicon crystals

A high resolution fully automated photoacoustic spectrometer (PAS) of the gas-microphone type is used in the photon energy region 0.8–1.6 eV to analyze the optical properties of silicon single crystals at different frequencies between 25 and 312 Hz. At modulating frequencies at which the sample thickness approaches its thermal diffusion length, the results obtained of untreated specimens using different PA cells reveal the presence of several peaks in the absorption tail, some of which are independent of the photon energy. The magnitude of these peaks is seen to be stronger than that of the maximum of the fundamental edge of silicon, thus making it indistinct. At lower modulating frequencies at which the sample thickness is far less than its thermal diffusion length and using a highly reflecting backing material, multiple reflections of the light beam within the sample interfaces are seen to enhance the PA amplitude signal sensitivity response as predicted theoretically. The effect of etching silicon samples in a diluted solution of hydrofluoric acid (5%) on photoacoustic spectra has been investigated. It is observed that this process removes all spurious features in the spectra originating from the surface contaminants making the fundamental absorption edge clearly visible and leaving only one distinct peak at hν=0.9 eV. Transmission-photoacoustic (T-PAS) has also been used to study silicon single crystals. In the light of recent literature a comparison is carried out between the results obtained using the two techniques in determining the absorption coefficient and the gap energy.