Crystal structure of YBa2Cu3O7−x thin films prepared by pulsed laser deposition with substrate bias voltage

The crystal structure of YBa₂Cu₃O_7−x thin films has been investigated by cross-section transmission electron microscopy. The samples were deposited on MgO (100) substrates at 670°C with substrate bias voltages of ±300 V. For the unbiased case, c-axis, a-axis and (103) oriented domains normal to the substrate surface were observed. In this film, the c-axis oriented domains are dominant, but the crystal often exhibits a longer c-lattice constant than that of the YBa₂Cu₃O_7−x system, so extra cationic layers are inserted in the YBa₂Cu₃O_7−x intrinsic stacking sequence. For the case of −300 V, rotated domains were dominant in the entire film; however, c-axis oriented domains also grow from the substrate surface. Small-angle semicoherent grain boundaries between them were observed. In the case of +300 V, all the grains show c-axis oriented YBa₂Cu₃O_7−x. The degree of preferential orientation of the grains is reduced at negative bias voltage of −300 V and the structure defects are reduced by applying a positive bias of +300 V.     

Electron concentration in YBa2Cu3O6.9 single crystals determined from field electron emission spectroscopic measurements

Results of field electron emission spectroscopic investigations of YBa₂Cu₃O_6.9 single crystal specimens oriented perpendicular to the c-axis are presented. It is shown that the shift of the total energy distribution of field-emitted electrons from YBa₂Cu₃O_6.9 along the energy scale with increasing electric-field strength at the surface of the specimen is due to the penetration of the electric field into the subsurface region of the YBa₂Cu₃O_6.9 specimen. The electron concentration in YBa₂Cu₃O_6.9 found from spectroscopic measurements is n=(2−4) × 10²¹ cm⁻³. Field electron emission spectroscopy and microscopy of YBa₂Cu₃O_6.9 allows one to draw the conclusion that the electron concentration in the bulk of the material does not change with cooling of specimens from 300 K to 115 K.     

Aspects of annealing and free surface crystallization of YBCO thin films

We describe a method of high temperature annealing in which the control of oxygen partial pressure is the principal experimental determinant in obtaining highly c oriented thin films of YBa₂Cu₃O_{7 − δ} on YSZ. Film crystallization, morphology and substrate interactions are discussed with detailed reference to the equilibria existing in the YBCO system. A model based on the melt-assisted crystallization of the precursor tetragonal compound, beginning at the free film surface, is used to explain the observed c texturing. Excellent Josephson coupling between grains of YBa₂Cu₃O_{7 − δ} in our films is related to melt-assisted growth. We discuss the adverse effects of annealing in pure oxygen at high temperatures.     

Formation of Ca-doped YBa2Cu4O8 phase in thin films

Ca-doped YBa₂Cu₄O₈ (124) thin films are prepared on (100) SrTiO₃ substrates by annealing the amorphous films deposited using a pulsed laser deposition technique. The X-ray diffraction measurements show that the Ca-doped YBa₂Cu₄O₈ phase is formed by annealing below 800°C at a oxygen pressure of 1 atm. The 124 films have c-axis orientation normal to the substrates. As the Ca content increases, the proportion of the 123 impurity phase in the samples increases. The onset temperature of superconductivity of the Y(Ca)Ba₂Cu₄O₈ films increases from 79 K to 88 K with an increase Ca-substitution for 5 to 10% of Y.     

High quality epitaxial YBCO(F) films directly deposited on sapphire

High-quality epitaxial YBa₂Cu₃O_7−δ (F) films were grown directly on r-plane (1 02) sapphire by a pulsed laser deposition technique using a multiphase fluorinated target. X-ray diffraction data showed that the film is highly c-axis oriented and in-plane aligned. The c-axis and in-plane mosaic spread are 1.1° and 2.4°, respectively. The microwave surface resistance measured by a con-focal resonator configuration is 56 mΩ at 94.1 GHz at 77 K which is the best reported value for a YBCO film on sapphire.

The improved film quality is attributed to the fluorine which is transported from the target to the growing surface of the film where it acts as an etching and/or catalytic agent to preferentially remove defects and second phase impurities and to promote better in-plane epitaxy.     

Phase equilibria at low oxygen partial pressure in the Y---Ba---Cu---O system

The phase equilibria around YBa₂Cu₃O_7−x (123) and YBa₂Cu₄O₈ (124) phases at low oxygen partial pressure (1 atm) were investigated by X-ray diffraction and thermal analysis. The coexistence of 123 and 124 phase was confirmed under 1 atm oxygen pressure. By using the high temperature X-ray diffraction method, the univariant reaction YBa₂Cu₃O_7−x+Cu₂OY₂BaCu₂O₂+O₂ was identified. The oxygen partial pressure dependence of several univariant reactions has been investigated and the existence of two invariant reactions of L+O₂YBa₂Cu₃O_7−x+ BaCuO₂+CuO+Cu₂O and L+Y₂BaCuO₅+O₂YBa₂Cu₃O_7−x+CuO+Cu₂O was deduced to occur at 1103 K under 0.0032 atm O₂ and at 1143 K under 0.0085 atm O₂, respectively.     

Preparation and superconducting properties of YBa2Cu4O8

Samples of YBa₂Cu₄O₈ are prepared by means of a new high oxygen pressure technique employing oxygen-HIP. Both magnetization and resistivity measurements show the superconductivity transition at 82.5 K. The lower and upper critical fields of YBa₂Cu₄O₈ are obtained from the magnetization measurements. The Ginzburg-Landau parameters, ζ(0)=17 Å, λ(0)=2400 Å, are estimated from these results.     

Observation of defects and growth orientations of YBa2Cu3Ox thin films with YSZ buffer layers on Si

We have investigated defects and in-plate orientations of YBa₂Cu₃O_x thin films prepared by pulsed laser deposition (PLD) with YSZ as a buffer layer. The films showed c-axis oriented growth with the transition temperature T_co up to 87 K. Several types of defects including thermally induced cracks, grain boundaries and outgrowths were observed by scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The grain boundary provided a favorable path for crack propagation. The outgrowths nucleated on the YSZ surface grew with stoichiometric composition. According to X-ray diffraction (XRD) and HRTEM studies the YSZ buffer layer grew with the orientation relationship, YSZ110//Si110 and YSZ(001)//Si(001) up to the YBCO/YSZ interface. The superconducting YBCO films on top grew mainly with YBCO100//Si110 and YBCO(001)//Si(001), with some minor portions of YBCO110//Si110 and YBCO(001)//Si(001).     

Microstructure and transport properties of YBa2Cu3O7−δ films produced by laser ablation from a BaF2/Y2O3/CuO target

The effects of varying the temperature and duration of the post-deposition anneal in watersaturated oxygen were investigated for YBa₂Cu₃O_7−δ films of varying thickness. The films were produced by laser ablation from pressed powder targets consisting of BaF₂,Y₂O₃, and CuO mixtures. This technique produces superconducting films with a highly textured surface. The films were fabricated on SrTiO₃ substrates and were analyzed with X-ray diffraction, scanning electron microscopy, and temperature dependent resistivity. Critical current density (J_c) measurements were performed in magnetic fields up to 1 T. For film thickness on the order of 900 nm, completely c-axis oriented films were obtained with a 60 min anneal at 850°C. Thinner films required less annealing, either shorter times or lower temperatures, to achieve similar results, indicating that the optimal annealing conditions are dependent on film thickness.     

Studies of synthesizing behaviors and superconductivity of sol-gel YBaCuO samples in flowing oxygen atmosphere

Systematic studies of synthesizing behaviors of sol-gel YBa₂Cu₃O_7-x samples in flowing oxygen atmosphere and their superconductivity have been performed. A set of high temperature ?-T curves has been obtained for the whole synthesizing process. After four rounds of synthesizing, the resistivity of the sample was around ? = 1.00 × 10^-3 ?cm at room temperature. The ?-T curve of the fourth round shows that the orthorhombic to tetragonal phase transformation of the sample occurs around 600°C, which is lower than that of the YBa₂Cu₃O_7-x sample prepared by conventional solid-state reaction method. Other measurements, such as X-ray diffraction, SEM measurement and low temperature R-T and M-T measurement, were also performed. And the R-T and M-T measurement results suggest that during the synthesizing process, there exist some state at which the sample has better superconductivity than the other states. Moreover, we found screw dislocations presenting on the sample broken surface from the SEM images. This will change the concept that the screw dislocations can only grow on the surface of the YBCO thin films and single crystals.     

Realization and properties of ramp-type YBa2Cu3O7−δ/Au/Nb junctions

All-thin-film ramp type Josephson junctions between YBa₂Cu₃O_7−δ and Nb have been fabricated. This procedure allows connections between high-T_c and low-T_c superconductors at different crystal sides of the high-T_c superconductor on one chip, which is of great interest for novel phase devices. A thin Au layer is incorporated as a chemical barrier to avoid oxygen transfer from the YBa₂Cu₃O_7−δ to the Nb. Critical current densities up to 600 A/cm² are obtained at T=4.2 K, with typical R_nA values of 0.8 μΩ cm². The variation of the magnetic field dependence of the critical current with the angle between the junction barrier and the YBa₂Cu₃O_7−δ crystal axes is explained by considering a predominant d_x²−y² order parameter symmetry of the YBa₂Cu₃O_7−δ. The successful fabrication of these junctions allows the implementation of novel superconducting electronics, such as complementary Josephson circuitry or proposed qubit concepts, using the unconventional order parameter symmetry of the high-T_c superconductor.     

The nuclear contribution to the specific heat of single crystals of YBa2Cu3O7 and Bi2Sr2CaCu2O8

Specific heat data below 1 K of Bi₂Sr₂CaCu₂O₈ and YBa₂Cu₃O₇ are analyzed. For YBa₂Cu₃O₇ the nuclear specific heat, C_N, amounts to 38T⁻² μJ/mol K. C_N for Bi₂Sr₂CaCu₂O₈ exceeds that of YBa₂Cu₃O₇ by a factor of 15. The nuclear quadrupolar specific heat contribution alone is insufficient to explain the data for YBa₂Cu₃O₇, while lack of NQR data does not allow such a comparison in Bi₂Sr₂CaCu₂O₈ to be made. The contribution to C_N from nuclear spins coupled via the contact hyperfine interaction with correlated magnetic spins (in the CuO₂ plane) is derived as a function of the correlation length. This contribution can be treated independently from the quadrupolar term. We show that the excess specific heat in YBa₂Cu₃O₇ likely originates in a few percentage of an impurity (oxygen deficient) phase with a strong hyperfine field on the Cu nuclei.     

Synthesis and structural characterisation of YSr2Cu3−xMxO7±y (M = Fe, Ti, Al, Co, Ga, Pb; 0.5 < x < 1), and the non-existence of the parent phase YSr2Cu3O7

The possibility of synthesising phases of general composition YSr₂Cu_3−xM_xO_7±y has been examined for a wide variety of metals M. Single phase tetragonal products (typically a = 3.83 Å, c = 11.5 Å) can be synthesised provided that the concentration of M is sufficiently large (x > 0.5), and M has a preference for the Cu(1) sites (the four-coordinate sites) of the YBa₂Cu₃O₇, structure. Neutron diffraction has demonstrated that a high degree of disorder exists in the (001) planes containing the M cations and, in particular, significant oxygen displacements are found. The non-existence of the unsubstituted variant YSr₂Cu₃O₇ is explained in terms of the high degree of compressive stress on the Cu(1) sites which could exist in such a material.     

Influence of MgO surface conditions on the in-plane crystal orientation and critical current density of epitaxial YBCO films

The effect of magnesium oxide (MgO) surface conditions on in-plane grain orientation and critical current density of epitaxial YBa₂Cu₃O₇ (YBCO) films was systematically investigated. The MgO substrates were either “as received” or stored for some time, cleaned using different methods and lithographically prepared for our step-edge junction devices. The YBCO films were grown via reactive thermal co-evaporation by Theva, GmbH. The surface characterisation of MgO substrates was studied using X-ray photoelectron spectroscopy (XPS). The in-plane grain orientation of the YBCO films was studied by means of X-ray diffraction (XRD) φ-scan and the critical current density was measured for the XRD scanned samples. The surface condition of the MgO substrates was found to have a strong influence on the in-plane grain orientation and the critical current density of the YBCO films. The MgO substrates with a degraded or contaminated surface gave rise to 45° grain misorientation in YBCO films and reduced the critical current density. A final process step using a low energy Ar ion beam etching (IBE) of the MgO substrates prior to the YBCO film deposition was found effective in removing the in-plane grain misorientation and promoting the growth of perfectly aligned c-axis YBCO films.     

Origin of intrinsic Josephson coupling in the cuprates and its relation to order parameter symmetry: An incoherent hopping model

Experiments on the cuprate superconductors demonstrate that these materials may be viewed as a stack of Josephson junctions along the direction normal to the CuO₂ planes (the c-axis). In this paper, we present a model which describes this intrinsic Josephson coupling in terms of incherent quasiparticle hopping along the c-axis arising from wave-function overlap, impurity-assisted hopping, and boson-assised hopping. We use this model to compute the magnitude and temperature T dependence of the resulting Josephson critical current j_c(T) for s- and d-wave superconductors. Contrary to other approaches, d-wave pairing in this model is compatible with an intrinsic Josephson effect at all hole concentrations and leads to j_c(T) T at low T. By parameterizing our theory with c-axis resistivity data from YBa₂Cu₃O_7−δ (YBCO), we estimate j_c(T) for optimally doped and underdoped members of this family. j_c(T) can be measured either directly or indirectly through microwave penetration depth experiments, and current measurements on Bi₂Sr₂CaCu₂O₈ and La_2−xSr_xCuO₄ are found to be consistent with s-wave pairing and the dominance of assisted hopping processes. The situation in YBCO is still unclear, but our estimates suggest that further experiments on this compound would be of great help in elucidating the validity of our model in general and the pairing symmetry in particular.     

A new layered cuprate superconductor: GaSr2(Y, Ce)2Cu2O9−δ

A new layered cuprate compound with a nominal composition of GaSr₂Y_2−xCe_xCu₂O_9−δ has been prepared. It crystallizes in a tetragonal lattice with cell parameters: a = 3.812 Å, c = 28.16 Å. The structure of the compound belongs to the same family of 1222 phase and is derived from that of GaSr₂LnCu₂O₇ by replacing the single Ln³⁺ layer with a double fluorite (Y, Ce)₂O₂ layer. Like other parent cuprate compounds of superconductors, the as-prepared samples showed antiferromagnetic and semiconducting behavior. After treatment under high oxygen pressure, the samples exhibited bulk superconductivity with transition temperatures between 12–14 K.     

掺杂Y2O3和BaCeO3提高MOD-YBCO超导性能的研究

本文通过在前驱液中添加过量钇盐和铈的有机盐,采用三氟乙酸盐-金属有机沉积法(TFA-MOD) 在铝酸镧单晶基体上制备了含有纳米氧化钇和纳米铈酸钡的YBCO薄膜. 与纯YBCO薄膜相比,掺杂Y₂O₃/BaCeO₃的YBCO膜的临界转变温度几乎保持不变,为91 K左右. 而掺杂Y₂O₃/BaCeO₃的YBCO膜的临界电流密度达到5.0 MA/cm² (77 K, 0T), 是纯YBCO膜临界电流密度的1.5倍.薄膜中的Y₂O₃和BaCeO₃可能在YBCO内部起到了 有效的钉扎磁通作用. 关键词： 钇钡铜氧薄膜 2O₃和纳米BaCeO₃')" href="#">纳米Y₂O₃和纳米BaCeO₃ 磁通钉扎 三氟乙酸盐-金属有机沉积     

Nb/Au/(1 1 0)YBa2Cu3O7−δ Josephson junctions: evidence against atomic scaled “corner junctions”

We report on I–V characteristics for in situ formed Nb/Au/(1 1 0)YBa₂Cu₃O_7−δ (YBCO) Josephson junction, where the homoepitaxial (1 1 0)YBCO film shows ultra-smooth surface morphology. The field dependence of critical supercurrent I_c shows anisotropic large junction behavior with normal Fraunhofer patterns expected from BCS model of d_x²−y² wave superconductors. This strongly suggests that the Nb/Au/(1 1 0)YBCO junctions cannot be regarded as atomic scaled corner junctions, in contrast with (0 0 1)/(1 1 0)YBCO grain boundary junctions to show “π-junction” with a pronounced dip near zero fields in field modulation of I_c.     

Phase separation in YBa2Cu3O7−δ single crystals near δ = 0

X-ray diffraction, resistivity, AC and DC magnetization data on high-quality single crystals of YBa₂Cu₃O_7−δ are presented. We demonstrate that for δ<0.08, the (0 0 l) diffraction lines are split into two, indicating that at these high oxygen concentrations the crystals are no longer single phase but actually consist of two (or more) different phases with slightly different c-axis parameters. In the two-phase region, the electrical resistivity and the AC and DC magnetic susceptibilities show a broadening of the superconducting transition. This broadening is thought to be due to the proximity effect or strains in two finely dispersed phases with slightly different transition temperatures.