Very low threshold operation of quantum cascade lasers

A strain-compensated InP-based quantum cascade laser(QCL) structure emitting at 4.6 μm is demonstrated,based on a two-phonon resonant design and grown by solid-source molecular beam epitaxy(MBE).By optimizing the growth parameters,a very high quality heterostructure with the lowest threshold current densities ever reported for QCLs was fabricated.Threshold current densities as low as 0.47 kA/cm~2 in pulsed operation and 0.56 kA/cm~2 in continuous-wave(cw) operation at 293 K were achieved for this state-of-the-art QCL.A minimum power consumption of 3.65 W was measured for the QCL,uncooled,with a high-reflectivity(HR) coating on its rear facet.     

Single-mode low threshold current multi-hole vertical-cavity surface-emitting lasers

A multi-hole vertical-cavity surface-emitting laser (VCSEL) operating in stable single mode with a low threshold current was produced by introducing multi-leaf scallop holes on the top distributed Bragg-reflector of an oxidation-confined 850 nm VCSEL. The single-mode output power of 2.6 mW, threshold current of 0.6 mA, full width of half maximum lasing spectrum of less than 0.1 nm, side mode suppression ratio of 28.4 dB, and far-field divergence angle of about 10° are obtained. The effects of different hole depths on the optical characteristics are simulated and analysed, including far-field divergence, spectrum and lateral cavity mode. The single-mode performance of this multi-hole device is attributed to the large radiation loss from the inter-hole spacing and the scattering loss at the bottom of the holes, particularly for higher order modes.     

Single-mode low threshold current multi-hole vertical-cavity surface-emitting lasers

A multi-hole vertical-cavity surface-emitting laser(VCSEL) operating in stable single mode with a low threshold current was produced by introducing multi-leaf scallop holes on the top distributed Bragg-reflector of an oxidationconfined 850 nm VCSEL.The single-mode output power of 2.6 mW,threshold current of 0.6 mA,full width of half maximum lasing spectrum of less than 0.1 nm,side mode suppression ratio of 28.4 dB,and far-field divergence angle of about 10 are obtained.The effects of different hole depths on the optical characteristics are simulated and analysed,including far-field divergence,spectrum and lateral cavity mode.The single-mode performance of this multi-hole device is attributed to the large radiation loss from the inter-hole spacing and the scattering loss at the bottom of the holes,particularly for higher order modes.     

Self-organization of the stripe domain structure in oblique-evaporated quantum wells in vacuum

The dependence of the domain structure of oblique-evaporated quantum wells on their thickness and the angle of inclination of the easy-magnetization axis with respect to the normal to the quantum well plane has been studied. It is found that the self-organization of domain structures is mainly related to the quantum character of the cooperative phenomenon.     

Fabrication of low threshold current monolithic DFB laser with an MMI combiner

We fabricate low threshold current monolithic distributed feedback(DFB) laser with a multi-mode interface(MMI) combiner using butt-joint metal-organic chemical vapor deposition technology with different waveguide structures. Multi-layer mask self-aligned photolithography technology is used to form different waveguides in active and passive regions, respectively. The result shows that the laser threshold current is lower than 10 m A, with 50 d B side-mode suppression ratio.     

Charge stripe structure in FeTe

We report the STM study on a single-crystalline sample of FeTe at 7.8 K. FeTe is one of the iron-based superconductor. We measured the resistivity and the magnetization of FeTe. FeTe shows SDW transition at 58 K on these measurements. We study the electronic state of FeTe by using STM/STS for observing FeTe from a microscopic viewpoint. We observed the iron layer and the tellurium layer with atomic resolution. Moreover, we discover the charge stripe structure on STM/STS measurement. We find the charge stripe structure is caused by iron atoms from the analysis. The gap structure of 9 meV was observed in tunneling spectra. This gap size is consistent with the SDW gap which is expected from mean field theory with T_N=58 K.     

Circular threshold quantum secret sharing

This paper proposes a circular threshold quantum secret sharing （TQSS） scheme with polarized single photons. A polarized single photon sequence runs circularly among any t or more of n parties and any t or more of n parties can reconstruct the secret key when they collaborate. It shows that entanglement is not necessary for quantum secret sharing. Moreover, the theoretic efficiency is improved to approach 100% as the single photons carrying the secret key are deterministically forwarded among any t or more of n parties, and each photon can carry one bit of information without quantum storage. This protocol is feasible with current technology.     

Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach

We present the fabrication process and experimental results of 850-nm oxide-confined vertical cavity surface emitting lasers (VCSELs) fabricated by using dielectric-free approach. The threshold current of 0.4 mA, which corresponds to the threshold current density of 0.5 kA/cm², differential resistance of 76 Ω, and maximum output power of more than 5 mW are achieved for the dielectric-free VCSEL with a square oxide aperture size of 9 μm at room temperature (RT). L–I–V characteristics of the dielectric-free VCSEL are compared with those of conventional VCSEL with the similar aperture size, which indicates the way to realize low-cost, low-power consumption VCSELs with extremely simple process. Preliminary study of the temperature-dependent L–I characteristics and modulation response of the dielectric-free VCSEL are also presented.     

Semiconductor lasers with unconventional cladding structures for small beam divergence and low threshold current

Quantum well semiconductor lasers with a novel cladding design to achieve small output beam divergence and low threshold current, simultaneously are discussed. Cladding structures that cause expansion in the optical mode, while maintaining a good confinement factor, are reviewed. The design criteria and compromises are discussed in detail. The new structures offer much improved beam divergence along with low threshold current compared with conventional graded-index separate confinement heterostructure (GRINSCH) lasers. An optimized structure with the new cladding design can yield a far-field angle as low as 14.6° and a low threshold current density of 180 A cm^-2.     

Fabrication and low threshold current density CW operation of GaInAsP/InP multiple-reflector microcavity laser

We report CW operation of a GaInAsP/InP multiple-reflector microcavity (MRMC) laser operated at fairly low threshold current density. The threshold current density with broad contact (stripe widthW=240 m, cavity lengthL=60 m) under pulsed operation was 180 A cm^–2 (l _th=20 mA), and was 230 A cm^–2 under CW operation at room temperature operating at 1.52 m wavelength.     

Anomalous threshold laws in quantum sticking

It has been stated that for a short-ranged surface interaction, the probability of a low-energy particle sticking to a surface always vanishes as s approximately k with k-->0 where k=sqrt[E]. Deviations from this so-called universal threshold law are derived using a linear model of particle-surface scattering. The Fredholm theory of integral equations is used to find the global conditions necessary for a convergent solution. The exceptional case of a zero-energy resonance is considered in detail. Anomalous threshold laws, where s approximately k(1+alpha),alpha>0 as k-->0, are shown to arise from a soft gap in the weighted density of states of excitations; alpha is determined by the behavior of the weighted density of states near the binding energy.     

Effect of structure anisotropy on low temperature spin dynamics in quantum wells

Spin dynamics of two-dimensional electron gas confined in an asymmetrical quantum well is studied theoretically in the regime where the scattering frequency is comparable with the spin precession frequency due to the conduction band spin splitting. The spin polarization is shown to demonstrate quantum beats. If the spin splitting is determined by both bulk and structural asymmetry mechanisms the beats are damped at zero temperature even in the absence of a scattering. We calculate the decay of spin beats due to the thermal broadening of the electron distribution function and electron scattering. The magnetic field applied along the structure growth axis is shown to increase the frequency of the beats and shift system towards the collision dominated regime.     

Effect of strain on stripe phases in the quantum Hall regime

Preferential orientation of the stripe phases in the quantum Hall (QH) regime has remained a puzzle since its discovery. We show experimentally and theoretically that the direction of high and low resistance of the two-dimensional (2D) hole gas in the QH regime can be controlled by an external strain. Depending on the sign of the in-plane shear strain, the Hartree-Fock energy of holes or electrons is minimized when the charge density wave (CDW) is oriented along the [110] or [110] directions. We suggest that shear strains due to internal electric fields in the growth direction are responsible for the observed orientation of CDW in pristine electron and hole samples.     

特殊结构的多臂量子环的持续电流

提出了中臂弯曲的多臂量子环模型,且是上臂最短和下臂最长的不等臂量子环.研究发现：总磁通为零时,持续电流随半导体环增大发生非周期性振荡,并与电极的磁矩方向及隧穿电子的自旋方向相关,下臂因为最长而获得最小的平均持续电流.AB磁通增强时,持续电流会发生周期性振荡,各臂之间明显出现相互制约的现象.各臂持续电流之间的差异与臂长和磁通分布相关,Rashba自旋轨道耦合具有改变持续电流相位和相位差的效应.在一定条件下,两种波函数所对应的持续电流是可分离的. 关键词： 多臂量子环 持续电流 Rashba自旋轨道耦合     

δ势垒对多臂量子环中持续电流的影响

提出了中臂弯曲的多臂量子环模型,且是上臂最短和下臂最长的不等臂量子环.研究发现：总磁通为零时,持续电流随半导体环增大发生非周期性振荡,并与电极的磁矩方向及隧穿电子的自旋方向相关,下臂因为最长而获得最小的平均持续电流.AB磁通增强时,持续电流会发生周期性振荡,各臂之间明显出现相互制约的现象.各臂持续电流之间的差异与臂长和磁通分布相关,Rashba自旋轨道耦合具有改变持续电流相位和相位差的效应.在一定条件下,两种波函数所对应的持续电流是可分离的.     

Experimental observation of quantum reflection far from threshold

We present first experimental evidence for quantum reflection, originating exclusively from an attractive potential between an atom and a solid surface, at energies far from the threshold E(i)-->0. The system of light and stable 3He atoms scattering from an alpha-quartz crystal allows confirmation of recent theory on quantum reflection up to its asymptotic behavior, determined by the nonretarded van der Waals potential -C(3)/r(3). From the data, the gas-solid interaction potential is deduced quantitatively, covering the energy region, in which retardation plays a role.     

低温下多通道量子结构中的弹性声子输运和热导

利用弹性近似模型和散射矩阵方法,研究了低温下多通道量子结构中的弹性声学声子输运的性质. 计算结果表明,对于低频声学声子,只要通道的横向宽度相同,各通道中最低阶模的透射概率几乎不受其他结构参数的影响,且其数值都接近于0.25;而高频声学声子在各通道中的透射概率与结构参数密切相关,不同通道中的透射概率不同;当温度非常低时,各通道的热导都接近于量子化热导π²k²_BT/(3h)的四分之一;随着温度的升高,各通道的热导增减 关键词： 声学声子输运 热导 量子结构