Switching field dependence on heating pulse duration in thermally assisted magnetic random access memories

The minimum applied field H_SW required to reverse the magnetic moment of the ferromagnetic/antiferromagnetic storage layer of a thermally assisted magnetic random access memory (TA-MRAM) device during the application of a heating electric pulse is investigated as a function of pulse power P_HP and duration δ. For the same power of the heating pulse P_HP (or, equivalently, for the same temperature of the storage layer), H_SW increases with decreasing heating time δ. This behavior is consistently interpreted by a thermally activated propagating domain-wall switching model, corroborated by a real-time study of switching. The increase of H_SW with decreasing pulse width introduces a constraint for the minimum power consumption of a TA-MRAM where writing combines heating and magnetic field application.     

Magnetic tunnel junctions comprising amorphous NiFeSiB and CoFeSiB free layers

Magnetic and magneto-transport behaviors of magnetic tunnel junctions (MTJs) incorporating newly developed amorphous NiFeSiB and CoFeSiB as free layers were investigated. Both experimental and theoretical approaches were carried out to understand the details of switching characteristics. The MTJs with traditional free layer materials such as NiFe and CoFe were also fabricated and compared. The studied amorphous ferromagnets appeared beneficial for reducing switching fields without loosing tunnelling magnetoresistive outputs. Further layer thickness, composition, and MTJ structure optimization are expected.     

Biased magnetization reversal in bi-phase multilayer microwires

We report on the magnetic behaviour of a novel family of two-magnetic-phase multilayer microwires consisting of: (i) a bistable FeSiB glass-coated amorphous microwire as soft nucleus, and (ii) a polycrystalline CoNi outer microtube as harder layer. Such bi-phase microwires are prepared by combined quenching and drawing plus sputtering and electroplating techniques. The stray field produced by the harder outer layer after premagnetizing it to saturation is used to bias the magnetization reversal process of the soft nucleus via dipolar magnetostatic coupling. A detailed analysis of the asymmetric low-field magnetization reversal process of the soft nucleus is presented together with the study of the fluctuating switching field and its asymmetric behaviour. The study of the domain wall characteristics under the presence of a nucleation coil at one end of the microwire allows us to draw conclusions on the role of the bias field generated by the premagnetized hard outer layer.     

Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) comprising amorphous Co_70.5Fe_4.5Si₁₅B₁₀, possessing low saturation magnetization of 560 emu/cm³, as a free layer have been investigated. The switching behaviours were confirmed for the micrometer-sized elements experimentally, using the scanning magneto-optical Kerr effect (scanning MOKE). A micromagnetic modelling study was also carried out for the submicrometer-sized elements. By using either a CoFeSiB single or a synthetic antiferromagnetic free-layer structure, the magnetization switching field became much lower than conventionally used CoFe free layered MTJs.     

Hard axis magnetic field dependence on current-induced magnetization switching in MgO-based magnetic tunnel junctions

We conducted a detailed study of hard axis magnetic field (H_hard) dependence on current-induced magnetization switching (CIMS) in MgO-based magnetic tunnel junctions (MTJs) with various junction sizes and various uniaxial anisotropy fields. The decreases in critical current density (J_c) and the intrinsic critical current density (J_c0) estimated from the pulse duration dependence on J_c in CIMS are observed when applying H_hard for all MTJs. The decrease in energy barrier of CIMS is also observed except for the largest sample. These results indicate that the reduction of J_c is attributable to both the increase of spin-transfer efficiency and the decrease in energy barrier in the case of applying H_hard. The J_c0 decreases with increase in the mutual angle between the direction of magnetization and the easy axis (θ_f), which is consistent with the theoretical prediction proposed by Slonczewski. The degree of the reduction of J_c0 for the same value of H_hard decreases with decreasing size of MTJs. This behavior is considered to be related to not only decrease in θ_f due to the increase in anisotropy field in MTJs, but also to the increase in the variance of the initial angle of magnetization due to the thermally activated magnon excitation. The stable switching endurance related to CIMS was observed in a wide range of MTJ sizes when applying H_hard. Moreover, we proposed a new architecture and a new switching method considering write disturbance. These results would be useful for application to spin memory and other spin-electronic devices.     

The domain structure and magnetic anisotropy in Co-based amorphous ribbons after annealing in a helical magnetic field: Part II

The interaction of stray fields and the eddy currents inherent in a sandwich domain structure is studied. This interaction allows us to control the existence of a sandwich domain structure in an amorphous ribbon. The formation of non-uniform magnetic anisotropy in an amorphous ribbon as a result of its annealing in a helical magnetic field is also investigated.     

Investigation of the domain structure of sintered Nd-Fe-B permanent magnets by Bitter-pattern method

The conventional Bitter-pattern technique and the colloid-scanning electron microscopy (colloid-SEM) method were used to study the domain structure of polycrystalline sintered Nd-Fe-B permanent magnets. In the thermally demagnetized state most of the grains are multidomain and the domain structures resemble those observed in bulk uniaxial crystals with strong magnetocrystalline anisotropy. Investigations of the magnetic microstructure during magnetizing cycle showed that the domain walls can easily be moved within the grains and that the magnetization reversal in sintered Nd-Fe-B magnets occurs predominantly by the nucleation and expansion of reverse domains at structural imperfections near the grain boundaries. It is also shown that the colloid-SEM method is more surface sensitive and reveals the domain structure with better resolution than the conventional Bitter technique. Thanks to the application of digital image processing systems, clear and high contrast domain images were obtained. The work was supported by the Lódź University within Research Grant 505/694 (2004).     

High-frequency properties of thin amorphous ribbons

Magnetic energy losses have been investigated in Co-based near-zero-magnetostriction amorphous ribbons from DC to 10 MHz. Attention has been devoted to the properties of field-annealed ribbons thinned down to 5.8 μm and their behavior at high frequencies. A rationale is provided for the frequency dependence of the magnetic losses over the investigated many-decade range through analysis of the loss components. Ribbons annealed under transverse field benefit by limited irreversible domain wall activity and correspondingly reduced hysteresis and excess losses. Based on the near-linear response of the material and the permeability–energy loss relationship, the separate contributions of domain wall displacements and rotations to the magnetization process and the related dissipation effects are singled out at all frequencies. Very thin amorphous ribbons are shown to display lower loss and higher permeability (i.e. higher Snoek's product) than Mn–Zn ferrites at all frequencies.     

Fast domain wall dynamics in amorphous glass-coated microwires

Here we report on the domain wall dynamics in amorphous glass-coated FeCuNbSiB microwires measured in the temperature range from 77 up to 400 K. At low temperatures below 200 K, the domain wall velocity is proportional to the applied magnetic field. At temperatures above 200 K, two regions have been found: one with low domain wall mobility at low fields and another one with high domain wall mobility at high fields. The different regions of the domain wall dynamics are treated in terms of the change of the domain wall configuration from transversal to vortex one. Moreover, non-linear regime is shown at low fields at the temperature 373 K as a result of the domain wall interaction with the local defects.     

Activated dynamics of semiflexible polymers on structured substrates

We study the thermally activated motion of semiflexible polymers in double-well potentials using field-theoretic methods. Shape, energy, and effective diffusion constant of kink excitations are calculated, and their dependence on the bending rigidity of the semiflexible polymer is determined. For symmetric potentials, the kink motion is purely diffusive whereas kink motion becomes directed in the presence of a driving force. We determine the average velocity of the semiflexible polymer based on the kink dynamics. The Kramers escape over the potential barriers proceeds by nucleation and diffusive motion of kink-antikink pairs, the relaxation to the straight configuration by annihilation of kink-antikink pairs. We consider both uniform and point-like driving forces. For the case of point-like forces the polymer crosses the potential barrier only if the force exceeds a critical value. Our results apply to the activated motion of biopolymers such as DNA and actin filaments or of synthetic polyelectrolytes on structured substrates.     

Electrical transport in bulk amorphous selenium

D.C. conductivity measurements have been made as a function of temperature and external electric field on bulk amorphous selenium. A decrease in the activation energy with increase of electric field has been observed. This has been interpreted in terms of a mixed, thermally activated and trap limited conduction process.     

Switching process in hard Co–Pt films

The switching process of electrodeposited Co-rich Co–Pt thin films with perpendicular magnetic anisotropy is investigated by out-of-plane angle-dependent hysteresis loop measurements. The switching field angular dependence is discussed in terms of basic reversal mechanisms. A model is proposed, based on a two-step switching process, to evaluate the variations of the intensity and orientation of the internal field as the modulus of external magnetic field is varied at each angle φ. Several experimentally observed salient features are well-understood, indicating that switching is due to inverse domain propagation.     

Magnetic relaxations in amorphous soft magnetic alloys

The paper reviews selected results of the extended experimental investigations of magnetic properties, time–temperature stability and workability of the soft magnetic amorphous alloys controlled by structural magnetic relaxation. Complex approach to the magnetic relaxations in multicomponent amorphous alloys is presented. The transition from magnetic after-effect to a new MAE spectrometry is illustrated on ternary amorphous CoSiB alloy.     

Thermally activated magnetic reversal induced by a spin-polarized current

We have measured the statistical properties of magnetic reversal in nanomagnets driven by a spin-polarized current. Like reversal induced by a magnetic field, spin-transfer-driven reversal near room temperature exhibits the properties of thermally activated escape over an effective barrier. However, the spin-transfer effect produces qualitatively different behaviors than an applied magnetic field. We discuss an effective current vs field stability diagram. If the current and field are tuned so that their effects oppose one another, the magnet can exhibit telegraph-noise switching.     

The effect of surface crystalline layers on asymmetric off-diagonal magnetoimpedance in field-annealed CoFeSiB amorphous ribbons

The off-diagonal magnetoimpedance in field-annealed CoFeSiB amorphous ribbons was measured using a pick-up coil wound around the sample. One side of a ribbon was etched in hydrofluoric acid solution during various times in order to change the thickness of the surface crystalline layer appearing after annealing. The asymmetric two-peak field dependence of the off-diagonal impedance was observed for all samples. The evolution of the off-diagonal magnetoimpedance with the change in the ribbon thickness is analyzed.     

Electron states in amorphous solids studied by higher derivative secondary-electron and photoemission spectroscopy

Subtle changes in the density of conduction-band states of vapor-deposited, amorphous Ge films, due to thermally activated, microstructural reordering processes, has been resolved in the photoelectron and secondary-electron energy distribution curves using electronic modulation techniques. Second-derivative spectra relate the energy distribution and density of electron states to the microstructure, and define the degree of short-range ordering in these films. The results provide evidence for “ideal” amorphous Ge films, which approach closely the completely random network. Polk structure.     

Structure and interconversion of oxygen-vacancy-related defects on amorphous silica

Atomic structure and structural stability of neutral oxygen vacancies on amorphous silica are investigated using combined Monte Carlo and density functional calculations. We find that, unlike their bulk counterparts, the Si-Si dimer configuration of surface oxygen vacancies is likely to be unstable due to the high tensile strains induced, thereby undergoing thermally activated transformation with a moderate barrier into other stable configurations including dicoordinated silicon, silanone, or a subsurface Si-Si dimer, depending on the local surface structure. Pathways for the interconversion between these oxygen-vacancy-related defects are presented with a discussion of their viability.     

Spatial inhomogeneity of the interaction between bistable ferromagnetic wires

An experimental study and a theoretical calculation are presented of the hysteresis loop of two bistable ferromagnetic wires. A new effect—an asymmetry of the shift of the switching field at the first and the second Barkhausen jump—is found experimentally. The effect is explained as a consequence of the spatial dependence of the stray field. It is also reproduced within our recent calculation of the stray field from the magnetisation profile. Theoretical results qualitatively agree with the experimental data.     

Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

LaAlO₃ (LAO) is explored in this work to replace SiO₂ as the gate dielectric material in metal–oxide–semiconductor field effect transistor. Amorphous LAO gate dielectric films were deposited on Si (0 0 1) substrates by low pressure metalorganic chemical vapor deposition using La(dpm)₃ and Al(acac)₃ sources. The effect of processing parameters such as deposition temperature and precursor vapor flux on growth, structure, morphology, and composition of LAO films has been investigated by various analytical methods deeply. The film growth mechanism on Si is reaction limiting instead of mass transport control. The reaction is thermally activated with activation energy of 37 kJ/mol. In the initial growth stage, Al element is deficient due to higher nucleation barrier on Si. The LAO films show a smooth surface and good thermal stability and remain amorphous up to a high temperature of 850 °C. The electrical properties of amorphous LAO ultrathin films on Si have also been evaluated, indicating LAO is suitable for high k gate dielectric applications.