Investigation of SiO2/Si3N4 films prepared on sapphire by r.f. magnetron reactive sputtering

Sapphire is a desired material for infrared-transmitting windows and domes because of its excellent optical and mechanical properties. However, its thermal shock resistance is limited by loss of compressive strength along the c-axis of the crystal with increasing temperature. In this paper, double layer films of SiO₂/Si₃N₄ were prepared on sapphire (α-Al₂O₃) by radio frequency magnetron reactive sputtering in order to increase both transmission and high temperature mechanical performance of infrared windows of sapphire. Composition and structure of each layer of the films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), respectively. Surface morphology and roughness of coated and uncoated sapphire have been measured using a talysurf. Flexural strengths of sapphire sample uncoated and coated with SiO₂/Si₃N₄ have been studied by 3-point bending tests at different temperatures. The results show that SiO₂/Si₃N₄ films can improve the surface morphology and reduce the surface roughness of sapphire substrate. In addition, the designed SiO₂/Si₃N₄ films can increase the transmission of sapphire in mid-wave infrared and strengthen sapphire at high temperatures. Results for 3-point bending tests indicated that the SiO₂/Si₃N₄ films increased the flexural strength of c-axis sapphire by a factor of about 1.4 at 800 °C.     

First-principles study of quasi-one-dimensional β-Na0.33V2O5

The electronic structure of β-Na_0.33V₂O₅ has been evaluated using the first-principle density functional theory approach. All energy bands near the Fermi surface (FS) disperse principally along the b-axis direction indicating the quasi-one-dimensionality of this system. The theoretical simulation of the optical property yields reasonable explanations for the notable features revealed in the measurements of the optical spectroscopy. Superconductivity appearing under a pressure of 8 GPa has been discussed in connection with the pressure-induced structural and bands alternations. It is suggested that the strong interchain coupling could play a key role in the appearance of superconductivity. The electron correlation effects on the electronic structure have also been calculated and discussed in comparison with photoemission data.     

Magnetic properties of NdAu2Ge2

Physical properties of NdAu₂Ge₂, crystallising with the tetragonal ThCr₂Si₂-type crystal structure, were investigated by means of magnetic, calorimetric and electrical transport measurements as well as by neutron diffraction. The compound exhibits antiferromagnetic ordering below T_N=4.5 K with a collinear magnetic structure of the AFI-type. The neodymium magnetic moments are parallel to the c-axis and amount to 1.04(4) μ_B at 1.5 K. The observed magnetic behaviour is strongly influenced by crystalline electric field effect.     

EPR studies of linewidth anomalies at phase transitions in [N(C2H5)4]2MnCl4

We have studied [N(C₂H₅)₄]₂MnCl₄ crystal by X-band CW EPR spectra in the temperature range 170-300 K. The angular dependences of linewidth ΔH were measured and described in the light of a double-layer system (2D) with exchange interactions. Two temperature anomalies of linewidth ΔH were found at T₁=225 K and T₂=192 K on cooling. Different behaviors of ΔH anomalies recorded for an external magnetic field parallel and perpendicular to the ab crystallographic plane indicate ordering/disordering of MnCl₄ groups in this plane and their displacement along the c-axis which occurs in the temperature of about 225 K.     

c-Axis orientation control of YBa2Cu3O7−x films grown on inclined-substrate-deposited MgO-buffered metallic substrates

Biaxially textured YBa₂Cu₃O_7−x (YBCO) films were grown on non-textured metal substrates with inclined-substrate-deposited (ISD) MgO as template. The biaxial texture feature of the films was examined by X-ray pole-figure analysis, φ-scan, and 2θ-scan. A tilt angle of 32° of the MgO[001] with respect to the substrate normal was observed. Epitaxial growth of YBCO films with c-axis tilt angle of 32° with respect to the substrate normal was obtained on these substrates with SrTiO₃(STO) as buffer layer. Whereas, by choosing yttria-stabilized ZrO₂ and CeO₂ instead of STO as buffer layer, a c-axis untilted YBCO film was obtained. Higher values of T_c=91 K and J_c=5.5×10⁵ A/cm² were obtained on the c-axis untilted YBCO films with 0.46 μm thickness at 77 K in zero field. Comparative studies revealed a unique role of CeO₂ in controlling the orientation of the YBCO films grown on ISD-MgO buffered metal substrates.     

Residual surface stress measurements in YBa2Cu3Ox superconductors

XRD and residual surface stress (sin² ψ) measurements were carried out on YBa₂Cu₃O_x superconductors with varying oxygen stoichiometry (6.3 < x < 7.0). Slopes of the surface strain versus sin² ψ were plotted against oxygen content for certain reflections. Compressional surface stress has been found along the c-axis, while a tensile surface stress has been observed along the ab-plane. Both surface stresses were found to vary slightly with oxygen content. These findings qualitatively agree with a very small hydrostatic pressure effect on T_c for fully oxygenated YBa₂Cu₃O_x (x = 7) compared to oxygen deficient material at the surface.     

Compositional dependence of ferroelectric properties of highly c-axis oriented Bi4−xNdxTi3O12 film capacitors

Highly c-axis oriented neodymium-modified bismuth titanate (Bi_4−xNd_xTi₃O₁₂) films having a variety of neodymium (Nd) contents were successfully grown on Pt/TiO₂/SiO₂/Si(100) substrates using metal-organic sol decomposition. After systematically examining ferroelectric properties of the c-axis oriented Bi_4−xNd_xTi₃O₁₂ film capacitors as a function of the Nd-content, we concluded that the capacitor with x=0.85 had the largest remanent polarization. The Bi_3.15Nd_0.85Ti₃O₁₂ capacitor fabricated using a top Pt electrode showed well-saturated polarization-electric field (P-E) switching curves with the remanent polarization (P_r) of 51 μC/cm² and the coercive field (E_c) of 99 kV/cm at an applied voltage of 10 V. More importantly, the Pt/Bi_3.15Nd_0.85Ti₃O₁₂/Pt capacitor exhibited fatigue-free behavior up to 4.5×10¹⁰ read/write switching cycles at a frequency of 1 MHz. The capacitor also demonstrated an excellent charge-retaining ability and a strong resistance against the imprinting failure.     

Anisotropic properties of self-flux grown LiB3O5 single crystals

In this paper, we report the existence of anisotropic behavior along the crystallographic axes in optical, electrical and thermal properties of lithium tri borate, a recently developed vacuum UV-NLO material. The variation of refractive index with the wavelength along the crystallographic axes was investigated by prism coupling method. The results of impedance spectroscopy measurement reveal the presence of a strong anisotropy in ionic conductivity and dielectric constant along the axes and also show the super-ionic conduction behavior along the c-axis with the activation energy of Δ∼0.20 eV. A thermo-mechanical study in the temperature range of 300-900 K indicates the existence of a strong variation in the linear thermal expansion coefficient (positive value along the a-axis, and negative value along the c-axis) of LiB₃O₅ crystals.     

Ferroelectric properties of highly c-axis oriented Bi4−xLaxTi3O12 film-based capacitors

Highly c-axis oriented lanthanum-modified bismuth titanate (Bi_4−xLa_xTi₃O₁₂) films having a variety of lanthanum (La) contents were grown on Pt/TiO₂/SiO₂/Si(100) substrates using metal-organic sol deposition and subsequent annealing at 650 °C for 1 h. After systematically examining the ferroelectric properties of Bi_4−xLa_xTi₃O₁₂ films as a function of the La-content, it was concluded that the film with x=0.85 had the largest remanent polarization in the direction parallel to the c-axis. The Pt/Bi_3.15La_0.85Ti₃O₁₂/Pt capacitor showed a well-saturated polarization-electric field (P-E) switching curve with the switching remanent polarization (2P_r) value of 33 μC/cm² and the coercive field (E_c) of 68 kV/cm at an applied voltage of 10 V. More importantly, the capacitor exhibited fatigue-free behavior up to 6.5×10¹⁰ read/write switching cycles at a frequency of 1 MHz. The capacitor also demonstrated an excellent charge-retaining ability and a strong resistance against the imprinting failure.     

Doping and temperature dependence of inversion symmetry breaking in La2−xSrxCuO4

The doping dependence of the Raman spectra of high quality La_2−xSr_xCu^16,18O₄ polycrystalline compounds has been investigated at low temperatures. It is shown that symmetry forbidden bands peaked at ∼150 cm⁻¹, ∼280 cm⁻¹, and ∼370 cm⁻¹ are activated in the (xx/yy) polarization Raman spectra due to the local breaking of the inversion symmetry mainly at low temperatures and for doping concentrations for which the compound is superconducting. The apparent A₁-character of the activated modes in the symmetry reduced phase indicates a reduction from the D_2h to C_2v or D₂ crystal symmetries, which associates the observed modes to specific IR-active phonons with eigenvectors mainly along the c-axis. The temperature and doping dependence of this inversion symmetry breaking and the superconducting transition temperature are very similar, though the symmetry reduction occurs at significantly higher temperatures.     

Magnetische struktur von columbiten MnTa2O6 und CoNb2O6

By means of neutron diffraction we found for MnTa₂O₆S₁S₂ S₃S₄ with a magnetic unit which is the same as the chemical. Whereas the chemical unit of CoNb₂O₆ is doubled in c-direction; all spins in the chemical unit are parallel. Therefore the orthorhombic symmetry of the crystal structure cannot be maintained. In both compositions are the spins parallel to the a-axis.     

Compression behavior of the delafossite-type metallic oxide PdCoO2 below 10 GPa

The compression behavior of delafossite-type metallic oxide PdCoO₂ below 10 GPa has been investigated by in situ high pressure X-ray diffraction measurement using synchrotron radiation. It is found that the delafossite-type structure of PdCoO₂ is stable below 10 GPa. It should be noted that compression behavior of PdCoO₂ is anisotropic. Pressure dependence of the lattice parameters indicates that the a-axis is more compressible than the c-axis. The lattice parameter ratio c/a in the hexagonal unit increases with increasing pressure. The calculated zero-pressure bulk modulus is 224 GPa. It is found that the above characteristic compression behaviors of PdCoO₂ are the same as those of the delafossite CuFeO₂. The compressibilities of the a-axis of both PdCoO₂ and CuFeO₂ are highly different although those of the c-axis are almost the same.     

Vortex lattice in Bi2Sr2CaCu2O8+δ well above the first-order phase-transition boundary

Measurements of non-local in-plane resistance originating from transverse vortex-vortex correlations have been performed on a Bi₂Sr₂CaCu₂O_8+δ high-T_c superconductor in a magnetic field up to 9 T applied along the crystal c-axis. Our results demonstrate that a rigid vortex lattice does exist over a broad portion of the magnetic field-temperature (H-T) phase diagram, well above the first-order transition (FOT) boundary H_FOT(T). The results also provide evidence for the vortex lattice melting and vortex liquid decoupling phase transitions, occurring above the H_FOT(T).     

Magnetic phase transition in TbMn2Ge2

The crystal and magnetic stucture of TbMn₂Ge₂ are determined by neutron diffraction using a powder sample. The crystal structure of this compound is of the ThCr₂Si₂ type with small mixing of Mn and Ge atoms between 4(d) and 4(e) positions. At RT the antiferromagnetic collinear structure consist of a+?+? sequence of ferromagnetic layers of Mn atoms with the magnetic moment parallel to the c-axis. At 85 K, the ferromagnetic ordering within the Tb sublattice is observed. The magnetic moment (～7.7 μ_B) is parallel to the c-axis. At 4.2 K additional reflections are observed, which correspond to antiferromagnetic components in a monoclinic unit cell.     

Writing of two-dimensional crystal curved lines at the surface of Sm2O3-Bi2O3-B2O3 glass by samarium atom heat processing

Two-dimensional crystal curved lines consisting of the nonlinear optical Sm_xBi_1−xBO₃ phase are fabricated at the surface of 8Sm₂O₃·37Bi₂O₃·55B₂O₃ glass by continuous wave Nd:YAG laser (wavelength: 1064 nm) irradiation (samarium atom heat processing) with a power of ∼0.9 W and a laser scanning speed of 5 μm/s. The curved lines with bending angles of 0-90° or with sine-shapes are written by just changing the laser scanning direction. The polarized micro-Raman scattering spectra for the line after bending are the same as those for the line before bending, indicating that the crystal plane of Sm_xBi_1−xBO₃ crystals to the crystal growth direction might be maintained even after the change in the laser scanning direction. It is found from laser scanning microscope observations that the crystal lines at the surface are swelled out smoothly, giving a height of about 10 μm.     

On asymmetric propagation on transverse acoustic waves near the structural phase transition in RbH3(SeO3)2

Recently ultrasonic measurements of the RbH₃(SeO₃)₂ crystal have shown that a transverse acoustic wave propagating along the modulation axis of the incommensurate structure (c-axis) and polarized along the polar axis (b-axis) exhibits greater temperature anomalies of its velocity and damping than a wave propagating along the b-axis and polarized along the c-axis. The possible explanation of this experimental result is given on the basis of the Landau theory.     

Micro-Raman and photoluminescence spectra of Sm-doped β-BaB2O4 crystal lines written by YAG laser irradiation in glass

Nonlinear optical β-BaB₂O₄ (β-BBO) crystal straight lines are written in 10Sm₂O₃·40BaO·50B₂O₃ glass by irradiation of a continuous wave Nd:YAG laser operating at 1064 nm. The linearly polarized micro-Raman scattering spectra for β-BBO crystal lines are consistent with those for commercially available y-cut β-BBO bulk single-crystals, supporting that β-BBO crystal straight lines with the c-axis orientation along the YAG laser scanning direction might be single-crystals. The photoluminescence spectra with large intensities and Stark splitting are observed for β-BBO crystal lines, and it is concluded that some amounts of Sm³⁺ ions in the glass are incorporated into β-BBO crystal lines. Two-dimensional β-BBO crystal curved lines with a bending angle of 30° are successfully written in 10Sm₂O₃·42BaO·48B₂O₃ glass.     

A powder neutron diffraction study of the ErCu2Ge2 compound - crystal field

The compound ErCu₂Ge₂ was studied by neutron diffraction. The diffraction diagram of this compound at 170 K agrees with its crystallographic structure. Its diagram at 1.9 K reveals the existence of superlattice lines consistent with a cell doubled in the a and c directions. The erbium magnetic moment (8.0±0.4)μ_B lies on the c-axis. Crystal field calculations on the Er³⁺ site give 7.9μ_B, with easy magnetization axis the c-axis of the crystal. Copper must contribute to the V^m_l crystal field parameters with a charge equal to 0.6⁺.     

Effects of H2 ambient annealing in fully 0 0 2-textured ZnO:Ga thin films grown on glass substrates using RF magnetron co-sputter deposition

Gallium doped zinc oxide (ZnO:Ga) thin films were grown on glass substrates using RF magnetron co-sputtering, followed by H₂ ambient annealing at 623 K to explore a possibility of steady and low-cost process for fabricating transparent electrodes. While it was observed that the ZnO:Ga thin films were densely packed c-axis oriented self-textured structures, in the as-deposited state, the films contained Ga₂O₃ and ZnGa₂O₄ which had adverse effect on the electrical properties. On the other hand, post-annealing in H₂ ambient improved the electrical properties significantly via reduction of Ga₂O₃ and ZnGa₂O₄ to release elemental Ga which subsequently acted as substitutional dopant increasing the carrier concentration by two orders of magnitude. Transmittance of the ZnO:Ga thin films were all over 90% that of glass while the optical band gap varied in accordance with the carrier concentrations due to changes in Fermi level. Experimental observation in this study suggests that transparent conductive oxide (TCO) films based on Ga doped ZnO with good electrical and optical properties can be realized via simple low-cost process.     

NMR study of the quasi-one-dimensional compound BaCo2V2O8

We report the results of a ⁵¹V nuclear magnetic resonance (NMR) study on the single crystal BaCo₂V ₂O₈ at temperatures between 3 and 300 K. The NMR features for fields both parallel and perpendicular to the c-axis have been identified. We found no substantial changes in the NMR shift and line width at low temperatures as a constant field of 7.06 T was applied along the c-axis. The NMR observations thus indicate the absence of magnetic long-range ordering under this field, consistent with the specific heat result which showed the disappearance of the magnetic transition beyond an external field of 4 T in BaCo₂V ₂O₈.