Epitaxial growth of Au and Pt on Fe3O4(1 1 1) surface

We have studied the epitaxial growth of Au and Pt layers on Fe₃O₄(1 1 1) as a function of the deposition temperature and thickness. The layers were deposited by UHV sputtering and the structural properties were investigated by reflection high energy electron diffraction (RHEED), X-ray experiments and transmission electron microscopy (TEM). The epitaxial growth of both metals was obtained whatever the deposition conditions but the wetting is however different for the two metals. Comparison between the coverage ratios of Au and Pt is correlated with their surface and interfaces energies. The optimum conditions to achieve a 2D flat epitaxial metallic layer are determined.     

Hydroxylated α-Al2O3 (0 0 0 1) surfaces and metal/α-Al2O3 (0 0 0 1) interfaces

X-ray photoelectron spectroscopy was applied to study the hydroxylation of α-Al₂O₃ (0 0 0 1) surfaces and the stability of surface OH groups. The evolution of interfacial chemistry of the α-Al₂O₃ (0 0 0 1) surfaces and metal/α-Al₂O₃ (0 0 0 1) interfaces are well illustrated via modifications of the surface O1s spectra. Clean hydroxylated surfaces are obtained through water- and oxygen plasma treatment at room temperature. The surface OH groups of the hydroxylated surface are very sensitive to electron beam illumination, Ar⁺ sputtering, UHV heating, and adsorption of reactive metals. The transformation of a hydroxylated surface to an Al-terminated surface occurs by high temperature annealing or Al deposition.     

Ultra-thin film growth of titanium dioxide on W(1 0 0)

We have employed low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy to follow the epitaxial growth of thin films of TiO₂ on W(1 0 0). The films were grown both by metal vapour deposition of titanium onto the substrate in UHV with subsequent annealing in a low partial pressure of oxygen, and by metal vapour deposition in a low partial pressure of oxygen. LEED patterns showed the characteristic patterns of (1 1 0) oriented rutile. A systematic spot splitting was observed and attributed to a stepped surface. The calculated step height was found to be in good agreement with that expected for rutile TiO₂(1 1 0), 3.3 Å. Titanium core level shifts were used to identify oxidation states as a function of film thickness allowing the interpretation in terms of a slightly sub-stoichiometric interface layer in contact with the substrate. In combination with the LEED patterns, the film structure is therefore determined to be (1 1 0) oriented rutile with a comparable level of stoichiometry to UHV prepared bulk crystals. The ordered step structure indicates considerable structural complexity of the surface.     

X-ray characterization of as-deposited, epitaxial films of Bi(0 1 2) on Au(1 1 1)

Electrodeposition is used to produce epitaxial single-crystal films on Au(1 1 1) substrates without annealing or other post-deposition modification. X-ray techniques show that the Bi(0 1 2) plane is parallel to the underlying Au(1 1 1) surface, and the azimuthal orientation of the films is determined. Combination of the X-ray data with in situ scanning tunneling microscopy (STM) images suggests a common growth mode from the first few layers up to thick films.     

Nucleation, coarsening and kinetic scaling of two-dimensional islands on GaSb(0 0 1)

Using a combination of molecular beam epitaxy and in situ surface X-ray diffraction, we investigate the nucleation and coarsening of monolayer high islands on GaSb(0 0 1) during deposition in real time. We find an activation energy for island nucleation of 1.55 ± 0.16 eV, indicating a stable nucleus size larger than two atoms. For intermediate temperatures where GaSb homoepitaxy is stable, the lateral coarsening of the islands after deposition is described by Ostwald ripening. The average island sizes during coarsening are isotropic, although with different size distributions in different directions. The size distributions do not change during coarsening, implying kinetic scaling.     

Au/TiO2/Ru(0 0 0 1) model catalysts and their interaction with CO

Au/TiO₂/Ru(0 0 0 1) model catalysts and their interaction with CO were investigated by scanning tunneling microscopy and different surface spectroscopies. Thin titanium oxide films were prepared by Ti deposition on Ru(0 0 0 1) in an O₂ atmosphere and subsequent annealing in O₂. By optimizing the conditions for deposition and post-treatment, smooth films were obtained either as fully oxidized TiO₂ or as partly reduced TiO_x, depending on the preparation conditions. CO adsorbed molecularly on both oxidized and reduced TiO₂, with slightly stronger bonding on the reduced films. Model catalyst surfaces were prepared by depositing submonolayer quantities of Au on the films and characterized by X-ray photoelectron spectroscopy and scanning tunneling microscopy. From X-ray photoelectron spectroscopy, a weak interaction between the Au and the TiO₂ substrate was found. At 100 K CO adsorption occurred on both the TiO₂ film and on the Au nanoparticles. CO desorbed from the Au particles with activation energies between 53 and 65 kJ/mol, depending on the Au coverage. If the Au deposit was annealed to 770 K prior to CO exposure, the CO adsorption energy decreased significantly. STM measurements revealed that the Au particles grow upon annealing, but are not encapsulated by TiO_x suboxides. The higher CO adsorption energy observed for smaller Au coverages and before annealing is attributed to a significantly stronger interaction of CO with mono- and bilayer Au islands, while for higher particles, the adsorption energy becomes more bulk-like. The implications of these effects on the known particle size effects in CO oxidation over supported Au/TiO₂ catalysts are discussed.     

Photoemission study of glycine adsorption on Cu/Au(1 1 1) interfaces

The adsorption of glycine on Au(1 1 1) pre-deposited with different amounts of Cu was investigated with both conventional X-ray photoelectron spectroscopy (XPS) and synchrotron-based photoemission. In the Cu submonolayer range, glycine physically adsorbs on the Cu/Au(1 1 1) surfaces in its zwitterionic form and completely desorbs at 350 K. The C 1s, O 1s and N 1s core level binding energies monotonically increase with Cu coverage. This indicates that, in the Cu submonolayer range, the admetal is alloyed with Au rather than forming overlayers on the Au(1 1 1) substrate, consistent with our recent experimental and theoretical results [X. Zhao, P. Liu, J. Hrbek, J.A. Rodriguez, M. Pérez, Surf. Sci. 592 (2005) 25]. Upon increasing the amount of deposited Cu over 1 ML, part of the glycine overlayer transforms from the zwitterionic form to the anionic form (NH₂CH₂COO⁻) and adsorbs chemically on the Cu/Au(1 1 1) surface with the N 1s binding energy shifted by −2.3 eV. When the amount of deposited Cu is at 3.0 or 6.0 ML, the intensity of the N 1s chemisorption peak increases with aging time at 300 K. It indicates that glycine adsorption induces Cu segregation from the subsurface region onto the top layer of the substrate. Judging from the initial N 1s peak intensities, it is concluded that 64% and 36% of the top layer are still occupied by Au atoms before glycine adsorption even when the amounts of deposited Cu are 3.0 and 6.0 ML, respectively. On the Au(1 1 1) surface pre-dosed with 6.0 ML of Cu, part of the chemisorbed glycine will desorb and part will decompose upon heating to 450-500 K. In addition, about 20% of the glycine exists in the neutral form when the glycine overlayer was dosed on Cu/Au(1 1 1) held at 100 K.     

Active oxidation of Cu3Au(1 1 0) using hyperthermal O2 molecular beam

Oxidation of Cu₃Au(1 1 0) using a hyperthermal O₂ molecular beam (HOMB) was investigated by X-ray photoemission spectroscopy in conjunction with a synchrotron light source. From the incident energy dependence of the O-uptake curve, the precursor-mediated dissociative adsorption occurs, where the trapped O₂ molecule can migrate and dissociate at the lower activation-barrier sites, dominantly at thermal O₂ exposures. Dissociative adsorption of O₂ on Cu₃Au(1 1 0) is as effective at the thermal O₂ exposure as on Cu(1 1 0). On the other hand, at the incident energies of HOMB where the direct dissociative adsorption is dominant, it was determined that the dissociative adsorption of O₂ implies a higher activation barrier and therefore less reactivity due to the Au alloying in comparison with the HOMB oxidation of Cu(1 1 0). The dissociative adsorption progresses with the Cu segregation on Cu₃Au(1 1 0) similarly as on Cu₃Au(1 0 0). The growth of Cu₂O for 2 eV HOMB suggests that the diffusion of Cu atoms also contribute to the oxidation process through the open face, which makes the difference from Cu₃Au(1 0 0).     

Decay of nano-islands located on Au(1 0 0) electrode in room temperature molten salt (EMImBF4)

The behaviour of nano-islands located on an Au(1 0 0) single crystal surface in contact with a room temperature molten salt, that is, 1-ethyl-3-methylimidazolium tetrafluoroborate (EMImBF₄), has been investigated using electrochemical atomic force microscopy (EC-AFM) under potential control. It was found from the in situ EC-AFM observations that a nano-island located on an Au(1 0 0) electrode collapses in EMImBF₄ in the potential range between −1.05 and 0.2 V (vs. Ag/Ag⁺ in EMImBF₄). It was also found that the nano-islands decay faster when the Au(1 0 0) electrode potential is more positive. These in situ EC-AFM observations reveal that the behaviour of the nano-island in the EMImBF₄ shown above is quite similar to that observed in a sulfuric acid aqueous solution.     

Adsorption of PTCDI on Au(1 1 1): Photoemission and scanning tunnelling microscopy

The adsorption of perylene-3,4,9,10-tetracarboxylic-3,4,9,10-diimide (PTCDI) on Au(1 1 1) has been studied using synchrotron-based X-ray photoelectron spectroscopy and in situ scanning tunnelling microscopy. Direct topographic and surface coverage information provided by the scanning probe measurements have enabled us to correlate peaks in the relatively complex carbon core-level photoemission to interactions of the surface with different parts of the PTCDI molecule. A strong interaction between the imide ends of the molecule with the underlying gold substrate is evidenced by a large chemical shift in the imide carbon peaks, which is observed only for the first adsorbed layer.     

The local structure of SO2 and SO3 on Ni(1 1 1)

The normal incidence X-ray standing wave (NIXSW) technique, supported by X-ray photoelectron spectroscopy and near-edge X-ray absorption fine structure (NEXAFS), has been used to determine the local adsorption geometry of SO₂ and SO₃ on Ni(1 1 1). Chemical-state specific NIXSW data for coadsorbed SO₃ and S, formed by the disproportionation of adsorbed SO₂ after heating from 140 K to 270 K, were obtained using S 1s photoemission detection. For adsorbed SO₂ at 140 K the new results confirm those of an earlier study [Jackson et al., Surf. Sci. 389 (1997) 223] that the molecule is located above hollow sites with its molecular plane parallel to the surface and the S and O atoms in off-atop sites; corrections to account for the non-dipole effects in the interpretation of the NIXSW monitored by S 1s and O 1s photoemission, not included in the earlier work, remove the need for any significant adsorption-induced distortion of the SO₂ in this structure. SO₃, not previously investigated, is found to occupy an off-bridge site with the C_3v axis slightly tilted relative to the surface normal and with one O atom in an off-atop site and the other two O atoms roughly between bridge and hollow sites. The O atoms are approximately 0.87 Å closer to the surface than the S atom. This general bonding orientation for SO₃ is similar to that found on Cu(1 1 1) and Cu(1 0 0) both experimentally and theoretically, although the detailed adsorption sites differ.     

In situ STM study of nanosized Ru and Os islands spontaneously deposited on Pt(1 1 1) and Au(1 1 1) electrodes

We provide an overview of structure and reactivity of selected bimetallic single crystal electrodes obtained by the method of spontaneous deposition. The surfaces that are described and compared are the following: Au(1 1 1)/Ru, Pt(1 1 1)/Ru and Pt(1 1 1)/Os. Detailed morphological information is presented and the significance of this work in current and further study of nanoisland covered surfaces in the catalytic and spectroscopic perspective is highlighted. All surfaces were investigated by in situ STM and by electroanalytical techniques. The results confirm our previous data that nanosized Ru islands are formed with specific and distinctive structural features, and that the Ru growth pattern is different for Au(1 1 1) and Pt(1 1 1). For Au(1 1 1), Ru is preferentially deposited on steps, while a random and relatively sparse distribution of Ru islands is observed on terraces. In contrast, for Ru deposited on Pt(1 1 1), a homogeneous deposition over all the Pt(1 1 1) surface was found. Os is also deposited homogeneously, and at a much higher rate than Ru, and even within a single deposition it forms a large proportion of multilayer islands. On Au(1 1 1), the Ru islands on both steps and terraces reach the saturation coverage within a short deposition time, and the Ru islands grow to multilayer heights and assume hexagonal shapes. On Pt(1 1 1), the Ru saturation coverage is reached relatively fast, but when a single deposition is applied, Ru nanoislands of mainly monoatomic height are formed, with the Ru coverage not exceeding 0.2 ML. For Ru deposits on Pt(1 1 1), we demonstrate that larger and multilayer islands obtained in two consecutive depositions can be reduced in size--both in height and width--by oxidizing the Ru islands and then by reducing them back to a metallic state. A clear increase in the Ru island dispersion is then obtained. However, methanol oxidation chronoamperometry shows that the surface with such a higher dispersion is less active to methanol oxidation than the initial surface. A preliminary interpretation of this effect is provided. Finally, we studied CO stripping reaction on Pt(1 1 1)/Ru, Au(1 1 1)/Ru and on Pt(1 1 1)/Os. We relate CO oxidation differences observed between Pt(1 1 1)/Ru and Pt(1 1 1)/Os to the difference in the oxophilicity of the two admetals. In turn, the difference in the CO stripping reaction on Pt(1 1 1)/Ru and Au(1 1 1)/Ru with respect to the Ru islands is linked to the effect of the substrate on the bond strength and/or adlayer structure of CO and OH_ads species.     

Structure and stability of Sb/Au(1 1 0)-c(2 × 2) surface phase

Adsorption of 0.5 monolayers (ML) of Sb on the Au(1 1 0) surface resulted in the formation of a c(2 × 2) surface reconstruction. Analysis of surface X-ray diffraction data by a direct method revealed the existence of an ordered substitutional surface alloy, with every other hollow site occupied by Au and Sb atoms. Quantitative conventional χ² refinement showed a contraction of 0.12 ± 0.03 Å in the spacing of the first Au layer to the second, an expansion of 0.13 ± 0.03 Å in the second-to-third layer distance, and an inward Sb displacement (rumpling) of 0.21 ± 0.04 Å. This surface phase proved to be extremely robust, with the long-range order of this arrangement remaining up to substrate temperatures of 900 K.     

Reaction of water with Ce-Au(1 1 1) and CeOx/Au(1 1 1) surfaces: Photoemission and STM studies

This article reports photoemission and STM studies for the adsorption and dissociation of water on Ce-Au(1 1 1) alloys and CeO_x/Au(1 1 1) surfaces. In general, the adsorption of water at 300 K on disordered Ce-Au(1 1 1) alloys led to O-H bond breaking and the formation of Ce(OH)_x species. Heating to 500-600 K induced the decomposition or disproportionation of the adsorbed OH groups, with the evolution of H₂ and H₂O into gas phase and the formation of Ce₂O₃ islands on the gold substrate. The intrinsic Ce ↔ H₂O interactions were explored by depositing Ce atoms on water multilayers supported on Au(1 1 1). After adsorbing Ce on ice layers at 100 K, the admetal was oxidized immediately to yield Ce³⁺. Heating to room temperature produced finger-like islands of Ce(OH)_x on the gold substrate. The hydroxyl groups dissociated upon additional heating to 500-600 K, leaving Ce₂O₃ particles over the surface. On these systems, water was not able to fully oxidize Ce into CeO₂ under UHV conditions. A complete Ce₂O₃ → CeO₂ transformation was seen upon reaction with O₂. The particles of CeO₂ dispersed on Au(1 1 1) did not interact with water at 300 K or higher temperatures. In this respect, they exhibited the same reactivity as does a periodic CeO₂(1 1 1) surface. On the other hand, the Ce₂O₃/Au(1 1 1) and CeO_2−x/Au(1 1 1) surfaces readily dissociated H₂O at 300-500 K. These systems showed an interesting reactivity for H₂O decomposition. Water decomposed into OH groups on Ce₂O₃/Au(1 1 1) or CeO_2−x/Au(1 1 1) without completely oxidizing Ce³⁺ into Ce⁴⁺. Annealing over 500 K removed the hydroxyl groups leaving behind CeO_2−x/Au(1 1 1) surfaces. In other words, the activity of CeO_x/Au(1 1 1) for water dissociation can be easily recovered. The behavior of gold-ceria catalysts during the water-gas shift reaction is discussed in light of these results.     

High-resolution photoemission studies of the interfacial reactivity and interfacial energetics of Au and Cu Schottky barriers on methyl-terminated Si(1 1 1) surfaces

The Schottky junction formation by the stepwise evaporation of gold and copper, respectively, onto methyl-terminated silicon, CH₃-Si(1 1 1), was investigated by synchrotron X-ray photoelectron spectroscopy. During the junction formation process, interface reactions occurred as revealed by the appearance of chemically shifted Si 2p components. Upon deposition of Au, the formation of about one monolayer of gold silicide, SiAu₃, with a Si 2p chemical shift of +0.75(2) eV, was observed. The SiAu₃ floated on top of the growing gold layer. Similarly, for the deposition of Cu, the methyl termination layer was partially disrupted, as indicated by the appearance of a −0.28(2) eV chemically shifted Si 2p component attributable to an interfacial copper silicide phase, SiCu₃. Hence, the termination of the Si(1 1 1) surface by methyl groups did not completely prevent interfacial reactions, but did reduce the amount interfacial reaction products as compared to bare Si(1 1 1)-(7 × 7) surfaces.Electron Schottky barrier heights of 0.78(8) eV (Au) and 0.61(8) eV (Cu) were measured. Within the experimental uncertainty the observed Schottky barriers were identical to those ones obtained on non-passivated, (7 × 7)-reconstructed Si(1 1 1) surfaces. Thus, the modification of the electronic properties of the silicon-metal contact requires the complete absence of interfacial reactions.     

Electrochemical Au deposition on stepped Si(1 1 1)-H surfaces: 3D versus 2D growth studied by AFM and X-ray diffraction

In order to grow magnetic layers on silicon substrates, a non-magnetic buffer layer is often needed to avoid silicide formation and to reproduce the perpendicular magnetic anisotropy obtained on metal single crystals, as in the case of Co on Au(1 1 1) and Pt(1 1 1). In this context, we have studied the electrochemical growth of Au buffer layers, and show that it is possible to obtain different film morphologies on hydrogen-terminated vicinal Si(1 1 1) surfaces by varying the electrochemical deposition parameters and solution composition. Two different morphologies have been obtained as observed by atomic force microscopy: continuous 2D Au films (chloride solution at pH 4), and films consisting in flat top 3D Au islands decorating the Si(1 1 1) step edges (cyanide solution at pH 14). X-ray diffraction measurements reveal that the gold layer and islands have Au(1 1 1) orientation and are in epitaxy with the Si(1 1 1) surface. In the case of islands, the lateral facets have also Au(1 1 1) orientation. Results are discussed within a model in which the breaking of the Si-H surface bonds plays a major role in the Au nucleation and growth mechanisms.     

Molecularly intact and dissociative adsorption of water on clean Cu(1 1 0): A comparison with the water/Ru(0 0 1) system

An X-ray photoelectron spectroscopy (XPS) study was undertaken of the water/Cu(1 1 0)-system finding non-dissociative adsorption on clean Cu(1 1 0) at temperatures below 150 K. Thermally induced dissociation of D₂O is observed to occur above 150 K, similar to the H₂O/Ru(0 0 1) system, with an experimentally derived activation barrier of 0.53-0.56 eV which is very close in magnitude to the derived activation barrier for desorption of 0.50-0.53 eV. X-ray and electron induced damage to the water overlayer was quantified and used to rationalize the results of a recent XPS study of the water/Cu(1 1 0)-system where partial dissociation was observed already at 90 K.     

Low temperature adsorption of oxygen on reduced V2O3(0 0 0 1) surfaces

Well ordered V₂O₃(0 0 0 1) films were prepared on Au(1 1 1) and W(1 1 0) substrates. These films are terminated by a layer of vanadyl groups under typical UHV conditions. Reduction by electron bombardment may remove the oxygen atoms of the vanadyl layer, leading to a surface terminated by vanadium atoms. The interaction of oxygen with the reduced V₂O₃(0 0 0 1) surface has been studied in the temperature range from 80 to 610 K. Thermal desorption spectroscopy (TDS), infrared reflection absorption spectroscopy (IRAS), high resolution electron energy loss spectroscopy (HREELS), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) were used to study the adsorbed oxygen species. Low temperature adsorption of oxygen on reduced V₂O₃(0 0 0 1) occurs both dissociatively and molecularly. At 90 K a negatively charged molecular oxygen species is observed. Upon annealing the adsorbed oxygen species dissociates, re-oxidizing the reduced surface by the formation of vanadyl species. Density functional theory was employed to calculate the structure and the vibrational frequencies of the O₂ species on the surface. Using both cluster and periodic models, the surface species could be identified as η²-peroxo () lying flat on surface, bonded to the surface vanadium atoms. Although the O-O vibrational normal mode involves motions almost parallel to the surface, it can be detected by infrared spectroscopy because it is connected with a change of the dipole moment perpendicular to the surface.     

Co growth on Si(0 0 1) and Si(1 1 1) surfaces: Interfacial interaction and growth dynamics

In situ X-ray photoelectron spectroscopy (XPS) and ex situ atomic force microscopy (AFM) were used to study the growth of thin cobalt films at room temperature (RT) on both clean and H-terminated Si(0 0 1) and Si(1 1 1) surfaces. The growth proceeds by first forming an initial CoSi₂-like phase at the growth front of the Si substrate. With increasing Co coverage the interfacial layer composition becomes richer in Co and eventually a metallic Co film is formed on top. Hydrogen termination of the Si surface did not suppress the reaction of Co and Si. A pseudo-layer-by-layer growth mode is proposed to describe the growth of Co on H-terminated Si surfaces, while closed-packed small island growth occurs on clean Si surfaces. The difference in growth mode can be attributed to the increase in the surface mobility of Co adatoms in the presence of hydrogen.     

Growth mode and electronic structure of Au nano-clusters on NiO(0 0 1) and TiO2(1 1 0)

The growth mode and electronic structure of Au nano-clusters grown on NiO and TiO₂ were analyzed by reflection high-energy electron diffraction, a field-emission type scanning electron microscope, medium energy ion scattering and photoelectron spectroscopy. Au was deposited on clean NiO(0 0 1)-1 × 1 and TiO₂(1 1 0)-1 × 1 surfaces at room temperature with a Knudsen cell at a rate of 0.25-0.35 ML/min (1 ML = 1.39 × 10¹⁵ atoms/cm²:Au(1 1 1)). Initially two-dimensional (2D) islands with thickness of one Au-atom layer grow epitaxially on NiO(0 0 1) and then neighboring 2D-islands link each other to form three-dimensional (3D)-islands with the c-axis oriented to the [1 1 1] direction. The critical size to form 3D-islands is estimated to be about 5 nm². The shape of the 3D-islands is well approximated by a partial sphere with a diameter d and height h ranging from 2.0 to 11.8 nm and from 0.95 to 4.2 nm, respectively for Au coverage from 0.13 to 4.6 ML. The valence band spectra show that the Au/NiO and Au/TiO₂ surfaces have metallic characters for Au coverage above 0.9 ML. We observed Au 4f spectra and found no binding energy shift for Au/NiO but significant higher binding energy shifts for Au/TiO₂ due to an electron charge transfer from Au to TiO₂. The work function of Au/NiO(0 0 1) gradually increases with increase in Au coverage from 4.4 eV (NiO(0 0 1)) to 5.36 eV (Au(1 1 1)). In contrast, a small Au deposition(0.15 to 1.5 ML) on TiO₂(1 1 0) leads to reduction of the work function, which is correlated with an electron charge transfer from Au to TiO₂ substrate.