Luminescence of fluctuation tails of disordered solid solutions

The form of the stationary luminescence spectra of excitons, localized by composition fluctuations, in disordered solid solutions under weak excitation is calculated. The tail states for which there are no nonradiative transition channels are distinguished by means of continuum percolation theory. Such states are responsible for the “zero-phonon” luminescence band. The shape of the short-wavelength luminescence band edge is determined mainly by the number of isolated localizing clusters and their smallest complexes, which decreases rapidly near the mobility threshold. The real luminescence spectrum is due to the simultaneous emission of phonons. The phonon emission determines the form of the long-wavelength wing of the emission band. The computed shape of the emission spectrum is compared with the experimental luminescence spectra of the solid solution CdS_(1−c)Se_c. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 3, 274–279 (10 February 1997)     

Optical spectra and a tail in the density of states of the disordered solid solution ZnSe1−c Tec

A calculational scheme is presented to determine the density of states in the fluctuation tail for the disordered solid solution ZnSe_1−c Te_c at concentrations below the threshold for percolation over sublattice sites. Zero-phonon absorption and luminescence bands in the region of the exciton ground state are found using an approach developed earlier. Phonon coupling is taken into account, and vibronic absorption and luminescence bands are obtained. Experimental data are shown to be in a good agreement with the calculations. Fiz. Tverd. Tela (St. Petersburg) 40, 1420–1425 (August 1998)     

Intrinsic luminescence of amorphous and disordered crystalline systems

A unified method is developed for describing the steady-state luminescence of exciton fluctuation states for weak excitation in different disordered systems. The phononless luminescence band is found to be formed by “radiative” states of the fluctuation tail in the density of states, i.e., by states for which nonradiative states are either nonexistent or have a low probability. The shape of the emission spectra calculated including the phonon interaction is in good agreement with experimental luminescence spectra of α Si:H and of solid solutions of ZnSe_(1−c)Te_c and CdS_(1−c)Se_c. Fiz. Tverd. Tela (St. Petersburg) 40, 890–891 (May 1998)     

X-ray microanalysis of quaternary semiconductor solid solutions and its application to the (SnTe-SnSe):In system

A reliable technique of local chemical characterization of multicomponent semiconductor solid solutions has been developed, and the possibility of its application to the SnTe-SnSe quaternary solid solutions doped with 16 at.% In verified. The behavior of the electrical resistivity of samples of these solid solutions at low temperatures, 0.4–4.2 K, has been studied. The critical temperature T _c and the second critical magnetic field H _c2 of the superconducting transition and their dependences on the solid-solution composition have been determined. The superconducting transition at T _c≈2–3 K is due to hole filling of the In-impurity resonance states, and the observed variation of the superconducting transition parameters with increasing Se content in the solid solution is related to the extrema in the valence band and the In band of resonance states shifting with respect to one another. Fiz. Tverd. Tela (St. Petersburg) 41, 612–617 (April 1999)     

Anti-stokes luminescence of solid AgCl<Subscript>0.95</Subscript>I<Subscript>0.05</Subscript> solutions

An anti-Stokes luminescence band with λ_max = 515 nm of microcrystals of solid AgCl_0.95I_0.05 solutions excited by a radiation flux of density 10¹³–10¹⁵ quanta/cm²·sec in the range 600–800 nm at 77 K was detected. It is shown that the intensity of this luminescence and the frequency of its excitation depend on the prior UV-irradiation of samples. Analysis of the stimulated-photoluminescence spectra and the anti-Stokes luminescence excitation spectra of the indicated microcrystals has shown that to the centers of anti-Stokes luminescence excitation correspond local levels in the forbidden band of the crystals. These states are apparently due to the atomic and molecular disperse silver particles that can be inherent in character or formed as a result of a low-temperature photochemical process. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 738–742, November–December, 2005.     

Luminescence spectra and crystal structure of high-temperature superconductors

The luminescence spectra are obtained in the visible region for the high-T _c superconductors La₂CuO₄, YBA₂Cu₃O_7−δ , Bi₂Sr₂CaCu₂O_8±δ , and YBa₂Cu₃O_8±δ and for the secondary phases BaCuO_2±γ and Y₂Cu₂O₅. The presence of a luminescence band with energy E _lum∼2.4 eV in the spectra of all the investigated compounds is established. The nature of the observed luminescence bands is discussed on the basis of a comparative analysis of the crystal structures and luminescence spectra and on the basis of notions as to the presence of bands in the spectra accompanied by photoinduced diffusion of weakly bound oxygen and photoinduced charge transfer in the CuO₂ planes. Fiz. Tverd. Tela (St. Petersburg) 39, 1739–1746 (October 1997)     

Thermoactivated spectroscopy of heterovalent impurity traps in CdWO4

Abstract

Recombination luminescence emission spectra, TSL and trap spectra estimated by fractional glow technique (FGT), in nominally pure and Li-, Bi- and Ho-doped CdWO₄, crystals are reported. According to the investigations by FGT heterovalent impurities Li, Bi and Ho causes localized electronic states which act as traps for charge carriers. It is shown that TSL results in emission of known blue-green luminescence band by emptying of the Li⁺-related traps in CdWO₄-Li and yellow luminescence band by emptying of the Bi³⁺-related traps in CdWO₄-Bi. It is proposed that blue-green and yellow luminescence occur by recombination correspondingly of free holes and free electrons at different intrinsic tungstate group related luminescence centers.     

Optical and thermal orientation of localized excitons in solid solutions under resonant excitation in a longitudinal magnetic field

A theoretical and experimental study of the effect of a longitudinal magnetic field on optical orientation and magneto-circular polarization of the luminescence of localized excitons in semiconducting solid solutions is reported. It is shown that recombination takes place through two types of emitting states differing substantially in the degree of anisotropy, g factor, and spin relaxation time. Estimates are made of the g factors, anisotropic and exchange splittings, lifetime, and spin relaxation time of localized states in a CdS_0.96Se_0.04/GaAs solidsolution epitaxial layer. Fiz. Tverd. Tela (St. Petersburg) 40, 900–902 (May 1998)     

Total-current spectroscopy of layered rare-metal dichalcogenides under electron excitation

A theoretical interpretation is given of the fine structure in the total-current spectra obtained from the (0001) plane of MoS₂, ZrS₂, and NbSe₂ single crystals. The calculations took into account the energy dependences of band energy-level broadening and of the density of unfilled electronic states which become occupied by electrons entering a solid. The dominant contribution of the bulk band structure to the spectra is demonstrated. Fiz. Tverd. Tela (St. Petersburg) 41, 1875–1878 (October 1999)     

Electronic excitations of Sc3+ impurity in α-Al2O3 crystals

Optical properties, including luminescence, of scandium-doped α-Al₂O₃ crystals have been studied in the VUV range. An absorption band associated with the scandium impurity was observed at the fundamental-absorption edge of crystalline corundum. A strong luminescence band peaking at 5.6 eV, which is most effectively excited within the 7.7–8.8-eV interval, was found. The kinetic and polarization characteristics of this luminescence were studied within the temperature range 6–500 K. An excitation model of the impurity complex and the mechanism of its relaxation are discussed. Fiz. Tverd. Tela (St. Petersburg) 40, 653–654 (April 1998)     

Luminescence properties of transparent ceramics Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>:Yb

We present the results of studying the luminescence properties of transparent ceramics Y₃Al₅O₁₂:Yb obtained by the vacuum sintering and nanocrystalline technology. In the course of research, we measured the luminescence and luminescence excitation spectra, as well as the temperature and kinetic behavior of luminescence. Our results are analyzed in comparison with the characteristics of corresponding single crystals. We revealed that processes of generation and relaxation of electronic excitations that occur in ceramics, in particular, in the charge transfer state, are similar to processes occurring in crystals. The behavior of two charge-transfer luminescence bands at 340 and 490 nm is studied. In the range 300–600 nm, we revealed a broad emission band of radiation of other type, which is also observed in spectra of undoped ceramics. This broad band is attributed to F⁺ centers. Emission and excitation spectra of charge transfer luminescence at a maximum of the temperature dependence of 100 K are measured for the first time. We found that, upon excitation in the charge transfer band, luminescence in ceramics is more intense than in single crystals with similar concentrations of Yb and has a higher quenching temperature.     

Electronic excitations in ZnWO4 and ZnxNi1?xWO4 (x = 0.1 ? 0.9) using VUV synchrotron radiation

The photoluminescence spectra and luminescence excitation spectra of pure microcrystalline and nano-sized ZnWO₄ as well as the Zn _x Ni_1−x WO₄ solid solutions were studied using vacuum ultraviolet (VUV) synchrotron radiation. The samples were also characterized by x-ray powder diffraction. We found that: (i) the shape of the photoluminescence band at 2.5 eV, being due to radiative electron transitions within the [WO₆]⁶⁻ anions, becomes modulated by the optical absorption of Ni²⁺ ions in the Zn _x Ni_1−x WO₄ solid solutions; and (ii) no significant change in the excitation spectra of Zn_0.9Ni_0.1WO₄ is observed compared to pure ZnWO₄. At the same time, a shift of the excitonic bands to smaller energies and a set of peaks, attributed to the one-electron transitions from the top of the valence band to quasi-localized states, were observed in the excitation spectrum of nano-sized ZnWO₄.     

Exciton mobility edge in CdS1−xSex solid solutions

Low temperature emission spectra of localized excitons in CdS_1?xSe_x solid solutions under the monochromatic excitation with tunable laser have been studied. It has been found that the luminescence of localized excitons has a high degree of linear polarization with respect to the polarization direction of exciting light. This polarization reflects the “hidden” anisotropy of macroscopically isotropic localized exciton system and strongly depends on the frequency of exciting light. Study of this dependence has permitted for the first time a determination of position of the “mobility edge” for exciton migration in disordered semiconductor solid solution.     

Intraband luminescence spectra of insulators and semiconductors excited by pulsed electron beams or electric fields

The features of the intraband luminescence spectrum of wide-gap insulators (KI, KBr, CsCl, etc.) and semiconductors (GaP, CdS, α-SiC, and ZnS) are studied in the temperature interval 80–760 K. The spectra of the intraband luminescence are compared with the spectra of the pre-breakdown electroluminescence of GaP and α-SiC surface-barrier diode structures and of a ZnS thin-film electroluminescence indicator. In alkali halide crystals the short-wavelength boundary hν _m of the intraband luminescence is less than the band gap E _g and is governed by complex excitonic processes. In semiconductors with indirect transitions hν _m>E _g. The differences in the spectra of the intraband luminescence and the intraband pre-breakdown electroluminescence can be explained by differences in the distributions of the hot charge carriers over levels of the allowed bands and in the maximum energies of the carriers involved in the formation of the spectra. Fiz. Tverd. Tela (St. Petersburg) 39, 613–617 (April 1997)     

Effect of hydrostatic compression on the indium-impurity-induced superconducting transition in Pb<Subscript>0.3</Subscript>Sn<Subscript>0.7</Subscript>Te

This paper reports on a study of the low-temperature conductivity and parameters of the superconducting state, namely, the critical temperature T _c and the second critical magnetic field H_c2, in the (Pb_0.3Sn_0.7)_0.95In_0.05Te solid solution under hydrostatic pressure P ≤ 9 kbar at T = 4.2 K. The choice of this material has been motivated by the fact that, according to earlier observations, it undergoes a superconducting transition at T _c ∼ 2.3 K, i.e., close to the maximum value T _c ∼ 2.9 K found for the (Pb _z Sn_{1 − z} )_0.95In_0.05Te solid solutions with a lead content z ∼ 0.15–0.25. It has been demonstrated that an increase in the pressure to P ≤ 9 kbar leads to a bell-shaped dependence T _c (P). The observed dependences are assigned to the effect of hydrostatic compression on the band structure of the solid solution and indicate a shift in the position of the Fermi level E _F with increasing pressure within the impurity band of the In quasi-local states. In this case, E _F passes through a maximum in the density of impurity states at P = 3–5 kbar.     

Magnetic susceptibility and inelastic electrical resistivity of GdZnxCu1−x alloys

The deviation from the Nordheim-Kurnakov rule and the anomalous behavior of spin-disordered electrical resistivity in quasi-binary GdZn (T _C =268 K)-GdCu (T _N =142 K) solid solutions is explained in effective medium approximation within percolation theory for the case of three phases, viz., ferro-, antiferro-, and paramagnetic. The strong increase of ρ at zinc concentrations x∼0.45 is attributed to the closeness of the system to the percolation threshold. The phase volumes calculated for the random-distribution case fit well to the concentration dependence of magnetic susceptibility. Fiz. Tverd. Tela (St. Petersburg) 40, 974–979 (June 1998)     

Luminescence of excitons in slightly asymmetric double quantum wells

We report the first studies of exciton luminescence spectra from asymmetric double quantum wells (DQWs) of very similar width. The DQWs were of GaAs/AlGaAs and the differences in widths of the coupled wells were one or two monolayers. The coupled direct and indirect exciton states anticross with a resonance splitting of 1.33 meV. An additional luminescence line appearing at low temperatures is identified as a localized indirect exciton. Fiz. Tverd. Tela (St. Petersburg) 39, 735–739 (April 1997)     

Electrical properties of amorphous (Co45Fe45Zr10)x(Al2O3)1?x nanocomposites

The electrical properties of (Co₄₅Fe₄₅Zr₁₀)_x(Al₂O₃)_1−x granular nanocomposites have been studied. The concentration dependences of electrical resistivity are S-shaped (in accordance with the percolation theory of conduction) with a threshold at a metallic component concentration of ∼41 at. %. An analysis of the temperature behavior carried out in the range 300–973 K revealed that structural relaxation and crystallization of the amorphous phase are accompanied by a decrease in the electrical resistivity of the composites above the percolation threshold and by its increase below the percolation threshold. For metallic phase concentrations x<41 at. %, variable range hopping conduction over localized states near the Fermi level was found to be dominant at low temperatures (77–180 K). A further increase in temperature brings about a crossover of the conduction mechanism from Mott’s law ln(σ) ∝ (1/T)^1/4 to ln(σ) ∝ (1/T)^1/2. A model of inelastic resonance tunneling over a chain of localized states of the dielectric matrix was used to find the average number of localized states involved in the charge transport between metallic grains. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 11, 2004, pp. 2076–2082. Original Russian Text Copyright ? 2004 by Kalinin, Remizov, Sitnikov.