A study of Ga layers on Si(1 0 0)-(2 × 1) by SR-PES: Influence of adsorbed water

Results for deposition and thermal annealing of gallium on the Si(1 0 0)-(2 × 1) surface achieved by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga on a clean surface, the influence of water adsorption on the arrangement of gallium atoms was also studied. The results on Ga deposition at a higher temperature (490 °C) are consistent with a Ga ad-dimer model showing equivalent bond arrangement of all Ga atoms for coverages up to 0.5 ML. The deposition onto a surface with adsorbed water at room temperature led to a disordered gallium growth. In this case gallium atoms bind to silicon dimers already binding fragments of adsorbed water. A subsequent annealing of these layers leads to a surface structure similar to the Ga-(2 × 2), however, it is less ordered, probably due to the presence of silicon oxides formed from water fragments.     

Oxygen induced facet formation on Rh(2 1 0) surface

Oxygen induced nanometer-scale faceting of the atomically rough Rh(2 1 0) surface has been studied using Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and scanning tunneling microscopy (STM). The Rh(2 1 0) surface completely covered with nanometer-scale facets when annealed at ≥550 K in the presence of oxygen. LEED studies reveal that the pyramidal faceted surface is characterized by three-sided nanoscale pyramids exposing (7 3 1), (7 3 −1) and (1 1 0) faces. A clean faceted surface was prepared through the use of low temperature surface cleaning method using the reaction with H₂ while preserving (“freezing”) the pyramidal facet structure. The resulting clean faceted surface remains stable for T ∼ 600 K and for higher temperatures; the faceted surface irreversibly relaxes to the planar surface. STM measurements confirms the formation of nanopyramids with average pyramid size ranging from 12 to 21 nm depending upon the annealing temperature. The nanopyramidal faceted Rh surface may be used as a potential template for the growth of metallic nanoclusters and for structure sensitive reactions.     

Ultra-thin Si overlayers on the TiO2 (1 1 0)-(1 × 2) surface: Growth mode and electronic properties

The growth of thin subnanometric silicon films on TiO₂ (1 1 0)-(1 × 2) reconstructed surfaces at room temperature (RT) has been studied in situ by X-ray and ultra-violet photoelectron spectroscopies (XPS and UPS), Auger electron and electron-energy-loss spectroscopies (AES and ELS), quantitative low energy electron diffraction (LEED-IV), and scanning tunneling microscopy (STM). For Si coverage up to one monolayer, a heterogeneous layer is formed. Its composition consists of a mixture of different suboxides SiO_x (1 < x ? 2) on top of a further reduced TiO₂ surface. Upon Si coverage, the characteristic (1 × 2) LEED pattern from the substrate is completely attenuated, indicating absence of long-range order. Annealing the SiO_x overlayer results in the formation of suboxides with different stoichiometry. The LEED pattern recovers the characteristic TiO₂ (1 1 0)-(1 × 2) diagram. LEED I-V curves from both, substrate and overlayer, indicate the formation of nanometric sized SiO_x clusters.     

Room-temperature-adsorption behavior of acetic anhydride on a TiO2(1 1 0) surface

We have studied the adsorption structure of acetic anhydride on a TiO₂(1 1 0) surface using XPS (X-ray photoelectron spectroscopy), LEED (low energy electron diffraction) and HREELS (high resolution electron energy loss spectroscopy) to determine the origins of the unique adsorption properties of carboxylic acids on a TiO₂(1 1 0) surface. The C 1s XPS data indicated that the saturation carbon amount of adsorbed acetic anhydride was 12 ± 3% larger than that of the adsorbed acetic acid. LEED showed p(2 × 1) weak spots for the acetic anhydride adsorbed surface. The HREELS spectra revealed the dissociative adsorption of acetic anhydride. Based on these findings, we concluded that the neutralization of the bridging oxygen atoms associated with the dissociative adsorption is necessary for the stable adsorption of carboxylates on the 5-fold Ti sites.     

Theoretical and experimental studies of the structure and dynamics of the CaF2(1 1 1) surface

The structure and dynamics of the CaF₂(1 1 1) surface were investigated by means of low-energy electron diffraction (LEED) and molecular dynamics (MD) simulations at 300 K. LEED beam intensities were recorded as a function of electron energy and were analyzed with the tensor LEED approach. Positions as well as mean square amplitudes of the ions in the first layers were fitted to the experimental I(E) curves. According to both LEED and MD, the CaF₂(1 1 1) surface structure is similar to the bulk-terminated structure with only small relaxation of the outermost ions. Moreover, both methods show an enhancement of vibrational amplitudes in the outermost F-Ca-F triple layer.     

Photoemission study of the (1 0 0) surface of Ni2MnGa and Mn2NiGa ferromagnetic shape memory alloys

The (1 0 0) surface of Ni₂MnGa and Mn₂NiGa ferromagnetic shape memory alloys have been studied by photoelectron spectroscopy and low energy electron diffraction (LEED). It is shown that by sputtering and annealing, it is possible to obtain a clean, ordered and stoichiometric surface that shows a four-fold 1 × 1 LEED pattern at room temperature. For both Ni₂MnGa and Mn₂NiGa, the surface becomes Ni-rich and Mn deficient after sputtering. However, as the annealing temperature is increased Mn segregates to the surface and at sufficiently high annealing temperature the Mn deficiency caused by sputtering is compensated. The (1 0 0) surface of Ni₂MnGa is found to have Mn-Ga termination. The valence band spectra of both Ni₂MnGa and Mn₂NiGa exhibits modifications with surface composition. For the stoichiometric surface, the origin of the spectral shape of the valence band is explained by calculations based on first principles density functional theory.     

Existence, character, and origin of surface-related bands in the high temperature iron pnictide superconductor BaFe(2-x)Co(x)As2

Low energy electron diffraction (LEED) experiments, LEED simulations, and finite slab density functional calculations are combined to study the cleavage surface of Co doped BaFe(2-x)Co(x)As2 (x = 0.1,0.17). We demonstrate that the energy dependence of the LEED data can only be understood from a terminating 1/2 Ba layer accompanied by distortions of the underlying As-Fe2-As block. As a result, surface-related Fe 3d states are present in the electronic structure, which we identify in angle resolved photoemission spectroscopy (ARPES) experiments. The close proximity of the surface-related states to the bulk bands inevitably leads to broadening of the ARPES signals, which excludes the use of the BaFe(2-x)Co(x)As2 system for accurate determination of self-energies using ARPES.     

Me-PTCDI thin film deposition on InSb(1 1 1)A

The evolution of N,N′-dimethylperylene-3,4,9,10-dicarboxyimide (Me-PTCDI) thin films formed by vapour deposition on InSb(1 1 1)A substrates has been studied by X-ray photoelectron spectroscopy (XPS), high-resolution electron energy loss spectroscopy (HREELS) and low energy electron diffraction (LEED). XPS studies of the Me-PTCDI covered surface indicate that no significant interaction occurs at sub-monolayer coverage when compared to multilayer Me-PTCDI films. HREELS studies suggest only a weak interaction as evidenced by very small changes in the frequencies of several molecular vibrational modes. LEED patterns show the Me-PTCDI overlayer adopts a structure commensurate with the underlying InSb(1 1 1)A substrate surface and that can be rationalised by van der Waals intermolecular energy calculations for the Me-PTCDI unit cell. The results are consistent with a weak interaction at the Me-PTCDI/InSb interface, the formation of the commensurate structure being sufficient to overcome the small energetic penalty associated with deviation from the calculated intermolecular interaction energy minimum.     

(2 × 1)-Na surface reconstruction induced by NaCl dissociation on Ag(1 1 0) during LEED analysis

This study first reports the initial growth stages of sodium chloride (NaCl) on Ag(1 1 0) at room temperature. NaCl grows in bi-layer mode along its [1 0 0] axis and gives rise to (4 × 1) and (1 × 2) reconstructed domains for coverages lower than two monolayers (ML), a minimal thickness inducing a bi-dimensional closed film. In addition, a 10 ML NaCl film has been examined by low energy electron diffraction (LEED). LEED analysis leads to the dissociation of the NaCl deposit in a few minutes. The NaCl dissociation implies Cl desorption from the surface and Na remaining on it. The residual Na is arranged in the form of a (2 × 1) surface reconstruction and is found to be strongly bounded to the Ag substrate. These findings have been established by using the X-ray photoelectron spectroscopy technique.     

InP(001)-(2 x 1) surface: a hydrogen stabilized structure

The InP(001)(2 x 1) surface has been reported to consist of a semiconducting monolayer of buckled phosphorus dimers. This apparent violation of the electron counting principle was explained by effects of strong electron correlation. Combining first-principles calculations with reflectance anisotropy spectroscopy and LEED experiments, we find that the (2 x 1) reconstruction is not at all a clean surface: it is induced by hydrogen adsorbed in an alternating sequence on the buckled P dimers. Thus, the microscopic structure of the InP growth plane relevant to standard gas phase epitaxy conditions is resolved and shown to obey the electron counting rule.     

The growth and structure of titanium dioxide films on a Re(1 0 −1 0) surface: Rutile(0 1 1)-(2 × 1)

Titanium dioxide films were grown on Re(1 0 −1 0) by Ti vapor deposition in oxygen at T = 830 K and studied by means of low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS), low-energy ion scattering (LEIS) and X-ray diffraction (XRD). The Ti oxide stoichiometry was determined by XPS as Ti:O = 1:2, with the Ti oxidation state (4+). The TiO₂ growth was monitored by means of LEED as a function of film thickness. Extending the coverage from the submonolayer into the multilayer regime gives rise to a p(2 × 2) pattern, a (poorly ordered) (1 × 1), and, finally, a stable (2 × 2) structure, the latter being associated with a homogeneous TiO₂ phase. For normal electron incidence, the (2 × 2) LEED pattern exhibits systematically extinguished beams at (n ± 1/2, 0) positions, indicating a glide mirror plane. The pg(2 × 2) structure could be explained by both a rutile(0 1 1)-(2 × 1) reconstructed surface and a bulk truncated brookite(0 0 1) surface. Faceting phenomena, i.e. running LEED spots, observed with thin TiO₂ films point to the formation of a rutile(0 1 1)-(2 × 1) surface with two domains and {0 1 1}-(2 × 1) facets and rule out the brookite alternative. Confirmation of this assignment was obtained by an XRD analysis performed at the Berlin synchrotron facility BESSY.     

Structural and dynamical properties of Ru(0 0 0 1) surface

I performed density functional theory (DFT) calculations combined with MD simulations to study the structural relaxation of Ru(0001) surface. The surface relaxation of the topmost layer is found to be about ?4% at absolute zero temperature. Using MD simulations in the temperatures range of 50 K and 900 K, the effect is found to be minor on the surface relaxation as compared to Pd (1 1 1) clean surface. The effect of surface vibration is also investigated using a LEED code and shows no effect of the vibrational level on the IV curves, which rules out any disagreement between proper theory and LEED results of well prepared surfaces.     

Asymmetric adsorption-site of potassium atoms in the (3 × 2)-p2mg structure formed on Cu(0 0 1)

The adsorption of K atoms on Cu(0 0 1) has been studied by low-energy electron diffraction (LEED) at room temperature (RT) and 130 K. At RT, a (3 × 2)-p2mg LEED pattern with single-domain was observed at coverage of 0.33, whereas the orthogonal two-domain was found at 130 K. At 130 K, a c(4 × 2) pattern with orthogonal two-domain was observed at coverage 0.25. Both the (3 × 2)-p2mg and c(4 × 2) structures have been determined by a tensor LEED analysis. It is demonstrated that K atoms are adsorbed on surface fourfold hollow sites in the c(4 × 2), while in the (3 × 2) structure two K atoms in the unit cell are located at an asymmetric site with a glide-reflection-symmetry. The asymmetric site is at near the midpoint between the exact hollow site and bridge-site but slightly close to the hollow site. A rumpling of 0.07 Å in the first Cu layer was confirmed, which might stabilize K atoms at the asymmetric site. Surface structures appearing in a coverage range 0.25-0.33 are discussed in terms of the occupation of the asymmetric site with increase of coverage.     

Structural analysis of the c(4 × 2) reconstruction in Si(0 0 1) and Ge(0 0 1) surfaces by low-energy electron diffraction

The c(4 × 2) structures in (0 0 1) surfaces of Si and Ge have been studied by low-energy electron diffraction (LEED). Using a proper cleaning method for the Si surface, we were able to observe clear c(4 × 2) LEED patterns up to incident energy of ∼400 eV as well as the Ge surface. Extensive experimental intensity-voltage curves allowed us to optimize the asymmetric dimer model up to the eighth layer (including the dimer layer) in depth in the dynamical LEED calculation. Optimized structural parameters are almost the same for the Si and Ge except for the height of the buckled-up atom of the asymmetric dimer. For the Ge surface, the structural parameters are in excellent agreement with those obtained by a previous theoretical calculation. The tilt angle and bond length of the dimer are 18 ± 1 (19 ± 1)° and 2.4 ± 0.1 (2.5 ± 0.1) Å for the Si(0 0 1) (Ge(0 0 1)), respectively.     

Low-energy electron diffraction structure determination of an ultrathin CoO film on Ag(0 0 1)

The atomic structure of a four layer thick film of CoO on a Ag(0 0 1) substrate has been determined by comparing experimental low-energy electron diffraction (LEED) I(V) curves with multiple scattering calculations. The CoO film has been prepared using reactive evaporation of Co in an oxygen atmosphere leading to almost layer-by-layer growth. Contrary to the surface of CoO crystals an outward relaxation of the two outermost CoO layers as well as rumpling in the top layer has been found. The supposed driving force of this relaxation is the in-plane compressive stress, which results from the pseudomorphic growth of the CoO film on the Ag(0 0 1) substrate and the lattice mismatch of the two materials.     

Growth and oxidation of a Ni3Al alloy on Ni(1 0 0)

The growth and oxidation of a thin film of Ni₃Al grown on Ni(1 0 0) were studied using Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and high resolution electron energy loss spectroscopy (EELS). At 300 K, a 12 Å thick layer of aluminium was deposited on a Ni(1 0 0) surface and subsequently annealed to 1150 K resulting in a thin film of Ni₃Al which grows with the (1 0 0) plane parallel to the (1 0 0) surface of the substrate. Oxidation at 300 K of Ni₃Al/Ni(1 0 0) until saturation leads to the growth of an aluminium oxide layer consisting of different alumina phases. By annealing up to 1000 K, a well ordered film of the Al₂O₃ film is formed which exhibits in the EEL spectra Fuchs-Kliewer phonons at 420, 640 and 880 cm⁻¹. The LEED pattern of the oxide shows a twelvefold ring structure. This LEED pattern is explained by two domains with hexagonal structure which are rotated by 90° with respect to each other. The lattice constant of the hexagonal structure amounts to ∼2.87 Å. The EELS data and the LEED pattern suggest that the γ^′-Al₂O₃ phase is formed which grows with the (1 1 1) plane parallel to the Ni(1 0 0) surface.     

Gd adsorption on the Mo(2 1 1) surface

The adsorption of Gd thin layers on the Mo(2 1 1) face was investigated by using Auger electron spectroscopy (AES), low electron energy diffraction (LEED), scanning tunneling microscopy (STM), X-ray photoemission spectroscopy (XPS) and measurements of the work function changes (Δφ). It was found that at 300 K Gd does not form any dilute chain structures and from the very beginning of the adsorption process Gd forms a densely packed layer. The dilute p(4 × 1) chain structure was observed by LEED after annealing thin layers (θ < 1 ML) to temperatures above 770 K. STM images confirm the existence of the p(4 × 1) structure islands. The intermixing of the substrate and adsorbate atoms takes place.     

Thin PTCDA films on Si(0 0 1): 2. Electronic structure

We have studied the thin film formation and the electronic structure of the organic molecular semiconductor 3,4,9,10 perylene tetracarboxylic dianhydride (PTCDA), on clean and on hydrogen-passivated Si(0 0 1) surfaces. The studies were made by means of high resolution X-ray photoelectron spectroscopy (HRXPS), angle-resolved photoelectron spectroscopy (ARPES), near edge X-ray absorption fine structure (NEXAFS) and low energy electron diffraction (LEED). On the H passivated surface the changes in the electronic structure of the substrate and the molecules with increasing film thickness are very small. The molecular orbitals show a dispersive behavior, indicating that the PTCDA layers are ordered. On the reactive clean surface the anhydride groups of the molecule interact with the substrate as indicated by changes in the core level binding energies. This results in a much lower ordering in the film compared to PTCDA on a passivated silicon surface. There is no sign of decomposition of the molecule because of the more reactive substrate.     

Fast leed intensity measurements from Ni(100)c(2 × 2)CO

The Ni(100)c(2 × 2)CO surface structure has been investigated by very fast LEED intensity measurements using a computer controlled television method. It turns out that the intensity spectra are strongly influenced by intolerably long measuring times during which the primary electron beam impinges onto the surface. The spectra have been taken within 16 sec at 100 K immediately after termination of the adsorption process for all beams simultaneously. They are compared with other measurements and with Pendrys model calculations for a CO molecule bonded linearly on top of a Ni atom with straight molecular axis normal to the surface. Using the r-factor formalism for theory-experiment comparison the bond length results to be 1.15 ± 0.1 Å for CO and 1.80 ± 0.1 Å for NiC. This is in agreement with the results of other methods and removes some discrepancies with those of earlier LEED experiments.     

GaAs (100)-(1X1) Structure Analysis from LEED Intensities

GaAs (100)-(1X1) surface grown by molecular-beam epitaxy was studied by low energy electron diffraction (LEED). Intensities of diffraction spots were measured in the energy range of (40-300) eV and analysed using dynamical tensor LEED package. Relaxation of surface layers decreased the Pendry's R-factor to 0.48. Analysis of the LEED intensity-voltage curves for the normal electron incidence shows that the investigated surface structure is more complicated than a simply relaxed ideal surface.