Optical and Paramagnetic Properties of Synthetic Diamond Single Crystals with a Low Content of Nitrogen

Optical and paramagnetic properties of synthetic diamond single crystals grown by the temperature gradient method in the Fe-Co-C and Fe-Co-Al-C systems using split-sphere high-pressure apparatus have been investigated. For crystals with a high (>5·10¹⁷ cm^–3) nitrogen concentration a good agreement of the concentrations of single substitution nitrogen atoms obtained from EPR, IR, and UV measurements was observed. For crystals with a low ((0.5–5.0)·10¹⁷ cm^–3) nitrogen concentration, there was no correlation between the results of substituting nitrogen concentrations obtained by the methods mentioned. It is shown that this behavior is attributable to the transition of the substituting nitrogen atoms from the paramagnetic neutral to nonparamagnetic positive charge state due to compensation by the boron impurity.     

Energy Spectra of the Local States in the Forbidden Gap of Monoclinic TlInS2xSe2(1?x) Crystals

Near IR properties of the mixed TlInS_2xSe_2(1–x) have been studied previously by the present authors. In this work the temperature and frequency dependence's of the conductivity and the current-voltage characteristics (in relatively weak electric field), have been investigated for monoclinic TlInS_2xSe_2(1–x) crystals, which are perspective materials for IR applications. From the temperature dependence's of conductivity in the direction perpendicular to c- axis the band gap E^g = 2.22 eV was determined for --TlInS₂ crystals. The impurity centres were determined located at 0.43, 0.73 eV and 0.35, 0.48, 1.12 eV for the direction of current i//c and i c, respectively. The concentration of the centres located at 0.48 and 1.12 eV were calculated to be N_A – N_D = 4.8 · 10⁹ cm^–3 and 1.9 · 10¹¹ cm^–3, respectively. It was found that in the solid solutions TlInS_2xSe_2(1–x) for 0.3 x 1, the conductivity follows the dependence (v) = ₀·^s in the temperature range between 100 to 600 K. In the temperature range of 80-400 K charge bounce plays an important role in the conductivity mechanism. Occurrence of the deep and low-levels impurity centres and a tail of the density of energy states in TlInS_2xSe_2(1–x) crystals make them perspective for practical applications: switching and memory effects, N-type current-voltage characteristics, induced conductivity etc.     

Muonium in ultra-pure and Si-doped germanium

The influence of the isoelectronic impurity silicon ([Si]=10¹²–10¹⁸ cm^–3) on the spin precession signals of positive muons in ultra-pure germanium crystals is investigated between 5 and 340 K in transverse magnetic fields of 0.5 to 27.5 mT. Normal (isotropic) muonium atoms Mu are formed in all samples with about the same probability ( 0.7). Down to quite low temperatures (20 K) Mu is found to diffuse very rapidly through the Ge matrix and to become ionized by interaction with the Si atoms. Another ionization process, presumably due to the screening of the ⁺ by the increasing number of free charge carriers, sets in at about 180 K.     

IR Reflection of Thin Bi4Ge3O12 Films

The spectra of IR reflection of the systems thin Bi₄Ge₃O₁₂ film–substrate made of molten -SiO₂ quartz in the region 10–1600 cm^–1 at 295 K are investigatedterpretation of fundamental vibrations in the region 10–800 cm^–1 and two phonon processes in the region 800–1600 cm^–1 are considered.     

Effect of electron irradiation on the electrophysical properties and photoluminescence of nuclear-transmutation-doped gallium arsenide

The Hall effect, the electric conductivity, and the photoluminescence spectra of electron irradiated (E=1 MeV, D=1.1·10¹⁵–3.8·10¹⁸ cm^–2) nuclear-transmutation-doped n-GaAs crystals and crystals of n-GaAs doped by the standard metallurgical method were investigated. The energy spectrum of the radiation-induced defects, determined from the Hall effect and DLTS spectra [E1–E5 traps with ionization energy 0.08, 0.14, 0.31, 0.71, and 0.9 eV, respectively (from the bottom of the C band)], is the same in nuclear-transmutation-doped and standard GaAs and satisfactorily describes the experimental dependence n(D). The rate of introduction of traps E1, E2 decreases as n₀ increases (from 1.3 cm^–1 in GaAs with n₀ — 10¹⁷ cm^–3 to 0.7 cm^–1 in GaAs with n₀ 10¹⁸ cm^–3). The rate of removal of charge carriers () increases as n₀ increases, irrespective of the method of growth and doping of GaAs. The isovalent impurity In in nuclear-transmutation-doped gallium arsenide with N_In 10¹⁸ cm^–3 decreases .Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 45–51, April, 1991.     

Photoconductivity of highly excited A IV B VI thin films

We report the results of picosecond photoconductivity measurements in photosensitive electrolytically deposited PbS and vacuum evaporated PbTe polycrystalline films. We determine Auger recombination to be the prevailing carrier recombination mechanism in highly excited PbTe and PbS films and found Auger coefficients _A5×10^–28 cm⁶ s^–1 for PbTe and _A5.3×10^–29 cm⁶ s^–1 for PbS for carrier concentration changes N>10¹⁸ cm^–3. The results indicate that the low mobility values are controlled by intergrain carrier scattering. We have studied the thermal annealing influence on picosecond photoconductivity of the films.     

A resonant bridge for measuring ɛ and tan δ for highly conducting substances

This bridge covers the range 5–200 kHz for substances of conductivity up to 10^–2 ohm^–1 cm^–1. The relative error in for tan =100 is ± 3%, while tan is measured to ± 2%. Results are given for solutions of high conductivity.     

Optical and electron spin resonance spectra ofZ 2(Eu) centers in alkali halide crystals

The ESR spectra ofZ ₂(Eu)-centers in KBr and KCl are presented and correlated to the optical absorption and the electron spin resonance of the Europium vacancy complex. The fine structure of theZ ₂ spectra can be described by a Spin-Hamiltonian with an axialb ₂ ⁰ -parameter only. At room temperature it amounts to 1,761 10^–4 cm^–1 for KBr, 1,854 10^–4 cm^–1 for KCl and 1,453 10^–4 cm^–1 for RbCl. Accordingly theZ ₂(Eu)-center must posses a strict axial 100-symmetry in these crystals.     

Luminescence of ZnO Having a Superstoichiometric Content of Oxygen

Using a unique method of radical-beam heteroepitaxy (RBHE) based on annealing of the crystals of the II–VI (ZnSe) compounds in a flow of radicals of a metalloid component — oxygen O — ZnO layers with a superstoichiometric content of oxygen were obtained. The conductivity of the layers = 10² ·cm, the mobility of the holes = 23 cm²/V·sec, and the concentration N _A = 10¹⁵ cm^–3. The luminescence spectra of pure ZnO single crystals and those doped with Li and Na, both treated by the RBHE method, are studied at helium temperatures. The luminescence centers associated with the intrinsic defects (V _Zn) are identified.     

Electrical properties of some crystalline salts of adenine

In the present paper we report the first experimental results on ac and dc conductivity and permittivity of adenine hemisulphate hydrate and adenine sulphate measured at atmospheric and high hydrostatic pressures. For both materials ac conductivity is of ^s type, where:s 1·1· Room temperature dc conductivity of adenine hemisulphate hydrate equals approximately 5×10^{–15 –1} cm^–1 with an activation energy of 0·86 eV; dc conductivity of adenine sulphate is less than 10^–16 cm^–1. On the basis of these measurements and those carried out at high pressure, it is concluded that conductivity of adenine hemisulphate hydrate is of electronic type.The authors wish to thank Dr. J. Zachová for the preparation of adenine salts single crystals.     

Role of Activator and Vacancy Centers in the Decay of the Gamma Scintillators of CsI–Na Crystals

The influence of the concentration of an activator (C _NaI) and of plastic deformation on a change in the contribution of a slow component to the decay of the -scintillations of CsI–Na crystals was investigated, as well as the influence of C _NaI on a change in the shape of the luminescence excitation spectrum in the region of absorption of activator centers (AC) and of vacancy-related centers (VRC) and also on a change in the intercenter time of deexcitation of the centers indicated. It is shown that AC and VRC participate in the photoluminescence and -scintillations of CsI–Na crystals. In the -scintillations, AC are responsible for the component ₁ = 370 nsec, whereas the components ₁ = 460 nsec and ₂ 2 sec are associated with VRC. The reduction of ₁ from 770 to 560 nsec with an increase in C _NaI from 2·10^–3 to 3·10^–2 mole% and from 570 to 470 nsec after plastic deformation of the crystals ( = 5%) along the 111 axis is caused by a decrease in the number of VRC. The mechanisms underlying the -scintillations of the CaI–Na crystals containing AC and VRC and also the decrease in the number of VRC are discussed.     

Positron mobility in anthracene

We have measured the positron mobility in a sample of scintillation grade anthracene at two temperatures. We obtain at 300 K: =(26.0±0.9±2.6) cm²V^–1s^–1 and at 77 K: =(33.4±1.1±3.3) cm²V^–1s^–1, where the first error estimate is statistical and the second is systematic. We have also made preliminary measurements on a highly purified sample that yields =(130±3±20) cm² V^–1 s^–1 at 300 K. The data are consistent with the hypothesis that the positron is scattered from both impurities and acoustic phonons in the first sample, and predominantly from photons in the second. It appears that positrons in pure anthracene crystals are delocalized and have a mean free path of about 85 Å at room temperature.     

Nonlinear piezoresistance in p-type silicon

An investigation was made of the longitudinal and transverse piezoresistance and electrical conductivity of p-type silicon under conditions of uniaxial compression, x [111], in the temperature range 77–300°K and hole concentration range 2.10¹⁵–5.10¹⁸ cm^–3. The transverse component of the electrical conductivity tensor, [11¯2], was found to depend nonmonotonically on the degree of compression. Compression decreases ₄₄ and increases the combination ₁₁ + 2₁₂. The nonlinearity oi the longitudinal piezoresistance increases with increasing hole concentration and T = 77°K. The results are explained by the rearrangement of the valence band under the deformation and the formation near the top of this band of a section of the spectrum described in the approximation of low energies of Pikus-Bir theory.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 3–7, October, 1980.     

Generation of secondary electrons and radiation defects in matter during absorption of electrons with energy above 1 MeV

Using the model of sections with one-dimensional geometry, the output of electrons generated by electrons with energies from 1 to 10 MeV is considered as a function of the thickness and the atomic number of various absorbers. The depth distributions of thermalized electrons and radiation defect profiles are calculated for the model absorbers KCl and NaCl. Radiation defects due to irreversible displacement of lattice atoms upon elastic scattering of rapid electrons are considered. The microphotometry method is used to obtain depth distributions of enrichment centers in the ionic crystals KCl and NaCl for irradiation by electrons with energies E=1, 1.5, and 2 MeV for electron-beam incidence on the absorbers at angles of₀=0, 20, 45°. The integral density of the incident beam was varied from 1·10¹⁴ to 6·10¹⁵ cm^–2. It was found that in ionic crystals the enrichment center density is proportional to the density of thermalized electrons, if the concentration of radiation defects generated is less than 1% of the density of preradiation anion vacancies.Presented at the Third All-Union Conference on Radiation Physics and the Chemistry of Ionic Crystals.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 105–111, April, 1977.     

Temperature dependence of anomalous Rutherford scattering of fast electrons in crystals

In contrast to the channeling of positively charged particles, the effect of the crystal temperature on orientational scattering of fast electrons has not been investigated up to now. Only in [1] did they observe a decrease in the efficiency of the inverse scattering of ^–-particles upon the heating of <100> KCl and KBr crystals, which they explained by a decrease in the efficiency of focusing of the electrons on chains of atoms. In this article the effect of thermal vibrations of atoms on the interaction of electrons with single crystals is discussed within the framework of the model of bound states of fast electrons with atomic arrays and crystal planes, which consistently explains both the high penetration of particles into the lattice and the anomalous Rutherford scattering under channeling conditions [2, 3]. Detailed discussion is carried out for <111> and (100) Si crystals and electron energy E=(1.0–1.5) MeV.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 29–35, July, 1978.     

On the dependence of the coercive field of BaTiO3 single crystals on their thickness

The paper gives the results of measuring the coercive field of single-domain single crystals of BaTiO₃, the thickness of which was lowered by successive etching. The initial decrease in the thicknessd is accompanied by a sudden increase in the coercive fieldE _c (E _c /d –1·5 × × 10⁵ V/cm²); after etching off layers larger than 10^–3 ÷ 2×10^–3cm the coercive field grows much more slowly (E _c /d –7×10³ V/cm²). The high initial growth ofE _c is interpreted by means of Schottky exhaustion layers with non-zero gradient of the electric potential.In conclusion, the authors would like to thank H. Arend, P. Coufová and J. Jarý for providing high-quality single crystals and for much valuable advice during the work and V. Dvoák and K. Pátek for remarks on this paper.     

Electrical properties of p-type ZnGeP2 irradiated by H+ ions

The properties of p-type ZnGeP₂ [p₀=(5–10)·10¹⁰ cm^–3, ₀=(2–5)·10^–7 (·cm)^–1], irradiated with H⁺ ions [E=5 MeV, T_irr=300 K, D=(1·10¹²–1.7·10¹⁶) cm^–2] are studied. An increase in the resistivity (to gr_max - 5·10¹¹ ·cm) and subsequent reduction in for large currents of H⁺ ions ( - 9·10⁸ ·cm for D - 1.7·10¹⁶ cm^–2), is observed in irradiated crystals. The resistivity of irradiated p-type ZnGeP₂ is found to be very sensitive to hydrostatic pressure [(4–5)·10^–5 bar^–1]. The annealing of radiation defects in the temperature interval (20–600) °C is examined.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 91–93, October, 1991.     

Wide-range tunable sub-millimetre cyclotron resonance laser

The results of investigation of cyclotron type stimulated emission processes inp-Ge in strong crossedE B fields are presented. Using the optimumE,B field orientation the spectral range of continuous tuning of the emission line frequency was increased substantially. A tunable sub-millimetre laser with the tuning rangev = 25 to 95cm^–1 ( = 105 to 400m), output power 10 to 100mW and emission linewidthv 0.2cm^–1 is described.     

N body scattering in the two-cluster region

We extend Combes' result on completeness ofN-body scattering at energies below the lowest 3-body threshold from potentials with |x|^–v– falloff ( number of dimensions for each particle) to central potentials with |x|^–1– . We also treat the scattering of electrons from neutral atoms in the two cluster region.Research supported by U.S. N.S.F. Grant MPS-75-11864     

Space- and time-resolved investigation of gain lines in Na-like copper

We report space- and time-resolved measurements of the gain coefficient for four gain lines in sodium-like copper. The lines investigated include the twon = 1 transitions 5g–4f and 5f–4d at 11.1 nm and 10.3nm and the twon = 2 transitions 6g–4f and 6f–4d at 7.2 nm, and 6.9 nm. The investigations were carried out for four irradiation intensities from 4 × 10¹² W/cm² to 3 × 10¹³ W/cm² using the Asterix IV high-power iodine laser at Garching (wavelength 1.315 µm, pulse duration 450 ps).The main results may be summarized as follows: On varying the laser intensity it was found that the highest values of the gain could be seen at an irradiation of 8 × 10¹² W/cm². For then = 1 lines the spatial maximum of the gain occurred at a distance of 300 µm from the target, and for then = 2 lines at 200 µm. The temporal gain maximum occurred at a time of 1.8 ns after the pulse maximum. The gain values range up to 2.6 cm^–1.Dedicated to the memory of the late Prof. Shi-shen Chen, who contributed to the early phase of this work