Characteristic energy losses on carbon contaminated layers correlated with secondary electron,auger electron emission and contrasts in scanning microscope

The secondary electron (SE) spectrum (0 < E < 50 eV) has been analysed by means of a CMA. Samples were clean aluminum, aluminum becoming carbon contaminated, sintered graphite powder, electro chemically deposited polymer on platinum and monocrystals of silicon carbon contaminated. When the clean Al surface is becoming carbon contaminated a quick decrease of surface plasmon and bulk plasmon losses is observed whereas a main characteristic energy loss peak (ELS) at 20 eV and a secondary electron peak at 20 eV appear simultaneously. Both peaks are very sensitive general features of carbon contaminated surfaces. The main loss peak is attributed to the excitation of the carbon-carbon bounds (σ → σ¹) as already proposed in the transmission ELS. The few eV change of the loss peak energy of various carbon compounds may correspond to slightly different carbon-carbon distances. The 20 eV secondary electrons could be produced by the relaxation of the excited state (σ¹ → σ transition) via an Auger process. The cross section for molecular electronic excitation is higher than that of atomic ionization for inner level. The loss peak is as intense as the SE peak and higher by more than two orders of magnitude than the C KLL Auger peak. The modification of secondary emission under carbon contamination has been observed on a silicon sample by Scanning Electron Microscopy (SEM) in the Secondary Electron Image (SEI) mode.     

Room temperature adsorption and growth of Ga and In on cleaved Si(111)

Low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and photoemission yield spectroscopy (PYS) measurements have been performed on a set of ultrahigh vacuum cleaved Si(111) surfaces with different bulk dopings as a function of Ga or In coverage θ. The metal layers are obtained by evaporation on the unheated substrate and θ varies from zero to several monolayers (ML). First, the 2×1 reconstruction of the clean substrate is replaced by a $\text{3}\text{×}\text{3}$ R30° structure at $\text{1}\text{3}$ ML, meanwhile the dangling bond peak at 0.6 eV below the valence band edge E_vs is replaced by a peak at 0.1 eV for Ga or 0.3 eV for In, below E_vs. At the same time, the ionization energy decreases by 0.4 eV (Ga) or 0.6 eV (In), while the Fermi level pinning position gets closer to the valence band edge by about 0.1eV. Upon increasing θ, new LEED structures develop and the electronic properties keep on changing slightly before metallic islands start to grow beyond θ ～1 ML.     

Adsorption-desorption properties,coadsorption, and surface structural chemistry of chlorine and oxygen on Ag(331)

At 300 K oxygen chemisorbs on Ag(331) with a low sticking probability, and the surface eventually facets to form a (110)?(2 × 1) O structure with ΔΦ = +0.7 eV. This facetting is completely reversible upon O₂ desorption at ~570 K. The electron impact properties of the adlayer, together with the LEED and desorption data, suggest that the transition from the (110) facetted surface to the (331) surface occurs at an oxygen coverage of about two-thirds the saturation value. Chemisorbed oxygen reacts rapidly with gaseous CO at 300 K, the reaction probability per impinging CO molecule being ~0.1. At 300 K chlorine adsorbs via a mobile precursor state and with a sticking probability of unity. The surface saturates to form a (6 × 1) structure with ΔΦ = +1.6 eV. This is interpreted in terms of a buckled close-packed layer of Cl atoms whose interatomic spacing is similar to those for Cl overlayers on Ag(111) and Ag(100). Desorption occurs exclusively as Cl atoms with E_d ~ 213 kJ mol^?1; a comparison of the Auger, ΔΦ, and desorption data suggests that the Cl adlayer undergoes significant depolarisation at high coverages. The interaction of chlorine with the oxygen predosed surface, and the converse oxygen-chlorine reaction are examined.     

High energy xps using a monochromated Ag Lα source: resolution,sensitivity and photoelectric cross sections

Resolution, sensitivity and calibration data are presented for a novel high energy XPS source, monochromated Ag Lα radiation (hv = 2984.3 eV). Adequate resolution is attainable for good signal/noise spectra, whilst values for experimental sensitivity factors agree well with theoretical cross section values calculated by Nefedov. This allows an evaluation of ESCA 3 Mk. II transmission function up to 3000 eV, which appears to obey an approximate E^{$\text{?1}\text{2}$} dependence. Monochromated Ag Lα (linewidth 1.3 eV) overcomes the problem of broad natural linewidths for high energy sources, such that chemical state information can be gained. Various new core level and Auger peaks are developed, a notable feature being the 1s core level and KLL Auger transition capability from Al through to Cl. Improved sensitivity is experienced for elements whose major peaks occur in the 1500–3000 eV BE range, whilst there is no serious reduction of sensitivity in the conventional XPS energy range.     

Incomplete relaxation and plasmon formation in the K emission band of copper

A method of calculating the effect of self-absorption in X-ray emission spectra and which is suitable for non-adiabatic excitation processes is presented. The Fermi-level E_F and the “true” profile of the electron-excited (20–40keV) CuKβ_2,5 band are determined. A deviation from the calvulated one-electron spectrum in the energy interval [-12 eV, -7 eV] below E_F is interpreted as a result of plasmon formation and Auger broadening. A pronounced disagreement is found also in the range [-1 eV, + 10eV]. Above E_F, a part of the intensity may be due to incomplete electron relaxation.     

Valence band contributions to photoluminescence excitation spectra of tightly bound holes in zincblende semiconductors

Photoluminescence excitation (PLE) spectra of deep acceptor states in ZnSe, for example the Cu-related luminescence band at ≈1.95 eV, contain a prominent excitation band at ≈3.25 eV. This band lies above the structure marking the lowest direct E_O band gap E_g by the spin-orbit splitting energy Δ of the valence bands at Γ. The higher energy feature is either absent or greatly de-emphasised in the PLE spectra of shallow acceptor states in ZnSe and of the oxygen iso-electronic trap in ZnTe, where the electron rather than the hole is tightly bound. However, a significant PLE component at E_g + Δ is observed for deep acceptor-like states in ZnTe, where Δ is ≈0.95 eV. Efficient PLE at E + Δ for luminescence from deep acceptor-like states is shown to be consistent with the extended wave-vector contributions to the bound state wave-functions of holes of binding energies ≈Δ.     

I.R.-Absorption peculiarities of GaP:Fe crystals irradiated by electrons

Using photo-ionization transitions theory by Allen and Langer the existence of two kinds of transitions was demonstrated for GaP:Fe crystals, namely, transition from valence band to local level (E_{2 = 1.27eV}). The effect of that form local level to conduction band (E_{2 = 1.27eV}). The effect of electron irradiation (E_{el = 3 MeV}) on both intracenter absorption and absorption in the 0.7?1.6 eV spectral region was investigated and the conclusion was made that absorption E₁ is probably due to Fe²⁺+e → Fe³⁺ photoionization transition while E₂-absorption is due to Fe³⁺ → Fe⁴⁺ +e transition.     

Resonances in the cesium atom yield in electron-stimulated desorption from tungsten coated with a germanium monolayer

The yield and energy distributions of Cs atoms emerging from cesium layers, which are adsorbed on tungsten coated with a thin germanium film (1-to 2-monolayers thick), have been measured as a function of the incident electron energy, the amount of adsorbed cesium, and the substrate temperature. The measurements were performed by the time-of-flight technique with a surface ionization detector. At low cesium coverages (Θ < 0.1), the Cs atom appearance threshold at a substrate temperature T = 160 K is ～24 eV, which correlates with the Cs 5s-level ionization energy. As the electron energy is increased, the yield passes through a broad plateau and reaches saturation. The signal intensity in the plateau region decreases gradually with increasing cesium coverage and tends to zero for Θ > 0.14. For Θ ≥ 0.15, the cesium atom appearance threshold shifts to ～30 eV, which corresponds to the Ge 3d-level ionization energy and the plateau is replaced by a resonance peak at ～38 eV, which can be identified with the ionization energy of the W 5p _3/2 level. This peak is observed only for Θ < 0.3 and T = 160 K. For Θ ≥ 0.3, there appears a resonance peak at ～50 eV, and for Θ ≥ 0.5, another resonance peak appears at ～80 eV. These peak positions correlate with the ionization energies of the W 5p _1/2 and W 5s levels, and their intensity is maximum at Θ = 1. The Cs atom energy distributions for Θ < 0.15 consist of a bell-shaped peak with a maximum at ～0.55 eV, and those for Θ ≥ 0.15 contain two nearly resolved maxima, a broad one peaking at ～0.5 eV and a narrow one at ～0.35 eV. The above results argue for the existence of three channels of Cs atom desorption. One channel involves reverse motion of the Cs²⁺ ion; another channel, neutralization of the adsorbed Cs⁺ ion following the Auger decay of a vacancy in the Ge atom; and the third channel involves desorption of a CsGe molecule as it is repelled from a W core exciton.     

Giant nonlinear absorption in the NiO antiferromagnet

A study of the spectrum of nonlinear two-photon and two-step absorption in NiO single crystals, carried out in the energy region ?ω₁ + ?ω₂ = 2.45–4.575 eV, showed it to have a complex shape and consist of very strong peaks (from 0.05 to 2.7 cm/MW). Within the energy interval 2.45–3.3 eV, the spectrum is due to d-d transitions in the Ni²⁺ ion. The band gap width was determined to be E _g =3.466 eV. The spectral features seen above this energy originate from interband transitions from three valence subbands to the conduction band bottom.     

VUV emission of Xe III levels excited by electron impact viaN 4,5 00 Auger transitions

Optical excitation functions were measured for Xenon emission lines. The Xe III 5s 5p ⁵ levels are excited in two different processes, by a direct two electron ejection and by a 4d ionization followed by an Auger decay. An emission line found at 1089.0 Å is excited by 4d ionization. This line is assigned to the Xe III transition 5s5p ^{5 1} P ⁰ —5s ⁰ 5p ^{6 1} S. The¹ S energy level amounts to 26.14 eV.     

Mass spectrometry study of the kinetics of CdTe molecular-beam epitaxy: Part I. Cd, Te2, and CdTe

Surface processes in CdTe molecular-beam epitaxy were studied using in situ mass spectrometry. Modulated molecular Cd and Te₂ beams were used for measuring kinetic parameters. The experiments were performed at crystal temperatures of 600–730 K. The results were processed within a model in which condensation and evaporation occur through adsorption and desorption stages. The desorption rate was 2–10 s^?1 for Te₂ and more than 30 s^?1 for Cd. The CdTe evaporation activation energy and desorption energies were determined as E _ev = 1.1 eV, E _d (Cd) = 1.0 eV, and E _d (Te) = 0.6 eV. The adsorbate coverage was estimated as n(Cd) < 0.01 and n(Te) = 0.1–1 Te.     

Postcollision interaction upon electron excitation of the 5sns 1 S 0 and 5snd 3 D j levels of the cadmium atom

The optical excitation functions (OEFs) for two series of spectral lines of the Cd atom originating from the 5sns ¹ S ₀ (n = 6?11) and 5snd ³ D _{1, 2, 3} (n = 5 and 6) levels excited by an ultramonoenergetic (ΔE _1/2 < 0.05 eV) electron beam with energies exceeding the single ionization threshold are presented. In the energy range from 10.8 to 12.9 eV, the energy dependences of the excitation cross sections of the studied spectral transitions exhibit the effect of postcollision interaction of slow scattered and fast emitted electrons. This process leads to an additional population of the initial levels of the spectral transitions due to the capture of a scattered electron into an excited atomic level. The energies and widths of the electronic decay of autoionizing states are estimated in the classical approach by two methods, namely, by the least squares method and by direct calculation. Calculations are performed using approximate formulas valid for different relations between the postcollision shifts of the OEF maxima and the binding energies of the atomic levels. The terms of the autoionizing atomic states responsible for the maxima observed in the OEFs of the spectral transitions are determined.     

多晶镍表面上氧的电子诱导脱附研究

长期暴露于大气的多晶镍样品,经700℃2小时真空退火及常温和500℃暴露氧20—60L后,发现其表面将产生两种电子诱导脱附(ESD)氧正离子。所对应的电子能量阈值分别为29eV和23eV。我们认为,两种氧正离子的产生机制为俄歇诱导脱附。29eV阈能者对应于镍表面化学吸附氧的2s能级电子向真空中电离;而23eV阈能者则对应于表面层中未与镍化合的自由氧的2s电子向体内费密能级跃迁。 关键词：     

Spectroscopic study of plasmons in ion-irradiated single-walled carbon nanotubes

The electronic structure of single-walled carbon nanotubes was experimentally investigated using x-ray photoelectron spectroscopy, reflection electron energy-loss spectroscopy, and Auger electron spectroscopy. A shake-up satellite structure observed near the C 1s core-level lines in the x-ray photoelectron spectra at high binding energies in the range 284–330 eV due to excitation of π and π + σ plasmons was studied. The effect of irradiation by 1-keV argon ions on the shape of the spectra was analyzed. The shape of the C 1s satellite spectra was found to be sensitive to Ar⁺ irradiation in the electron energy loss range 10–40 eV corresponding to excitation of π + σ plasmons. Auger spectroscopy revealed the presence of argon on the surface of ion-irradiated samples. The argon content increased to ～4 at. % with increasing irradiation dose. An analysis of the results obtained and their comparison with the data available in the literature led to a qualitative conclusion that the bond angles of the carbon atoms making up the walls of single-walled carbon nanotubes are distorted at sites exposed to Ar⁺ irradiation.     

Electron-stimulated desorption of sodium atoms initiated by their reverse motion

This paper reports on the first measurement of the yield and energy distributions of sodium atoms in electron-stimulated desorption at T = 160 K from sodium layers adsorbed on tungsten with a gold film atop. The Na atom yield has a resonant pattern with an appearance threshold of 30 eV, which can be attributed to exciton excitation in the Na 2p level. The Na yield is associated with the formation of a semiconducting Na _x Au _y film at T ∼ 300 K and sodium and gold coverages in excess of one monolayer. Sodium atoms are desorbed through Auger neutralization of Na²⁺ ions in their reverse motion toward the surface and is limited by the resonant ionization of Na atoms as they pass through the adsorbed layer of Na⁺ ions. The energy distributions of Na atoms are bell shaped with a maximum at about 0.56 eV.     

Angular dependence of the electron energy loss spectra from a clean and adsorbate covered W(001) surface

A dispersion analysis of the EELS from a W(001) surface in the range 1 < ΔE < 35 eV has been performed and compared with recent and complete optical data for tungsten. The non-dispersive (k ～ 0) EELS correlated well with a combination of the surface and bulk loss functions calculated from the optical data. Losses at 1–5 eV and a pair at 32 and 34.5 eV were assigned to interband and N_6,7 core ionization excitations respectively. The principal bulk and surface plasmon losses were identified at 24.0 and 20.3 eV respectively. Two further losses at 14.0 and 9.6 eV were also observed and assigned to subsidiary plasmon losses. All four plasmon losses showed only minimal energy dispersion, never exceeding 1.5 eV. A momentum selectivity for separating bulk and surface interband losses was demonstrated with the non-dispersive losses arising from excitations within the bulk even with incident energies as low as 88 eV, whereas their dispersive counterparts were extremely sensitive to the chemical state of the surface. New adsorbate derived losses which develop during adsorption were associated with excitations from the new deep lying adsorbate levels to final state levels at or near the Fermi level. It was concluded that this final state was also responsible for the N_6,7 ionization losses.     

Photoluminescence of concentration series of CaF2: Mn phosphors excited by VUV radiation

Fluorescent characteristics of a series of powder CaF₂: Mn phosphors (from 0.01 to 2.47 wt. % of Mn in the mixture) excited by VUV radiation with quantum energies up to 14 eV at 293 K and up to 12 eV at 85 K are measured. Narrow excitation bands of Mn²⁺ centers found at 7.9 and 8.6 eV (at 293 K) are assigned to partially forbidden transitions of electrons from the ground state ⁶ S split by the crystalline field (10 Dq=0.71 eV from the literature) in two sublevels to the excited level corresponding to the ⁶ D term of a free Mn²⁺ ion (3d ⁵ → 3d ⁴4s transitions). A wide nonelementary excitation band in the region of 9.1–10.3 eV is interpreted as photogeneration of near-activator D-excitations: allowed transitions of electrons from levels that are split from the top of the valence band under the influence of an impurity ion to the free 4s-orbital of a Mn²⁺ ion. Channels of energy transport in the CaF₂: Mn system are briefly analyzed.     

A study of the adsorption of oxygen on Ni(111) using auger electron spectroscopy: Chemical shifts and valence spectra

Auger electron spectra have been recorded when oxygen is adsorbed on a Ni(111) single crystal surface. For the coverage range θ < 1, an analysis of the plot of the peak to peak height (H) of the oxygen KVV (516 eV) transition versus the total number of molecules cm^2? impinging on the surface (molecular beam dosing) shows agreement with the kinetic mechanism proposed by Morgan and King [Surface Sci. 23 (1970) 259] for the adsorption of oxygen on polycrystalline nickel films. In this coverage range, no energy shifts of the nickel or oxygen Auger peaks were recorded.At coverages θ > 1 (standard dosing procedure) shifts in the valence spectra M_{2, 3}VV (61 eV) and L₃M_{2, 3}V (782 eV) of ?2.3 eV and ?1.8eV respectively are recorded at 1.4 × 10^?2 torr-sec. Up to these coverages no shift of the L₃VV transition (849 eV) is observed. A chemical shift of ?2.1 eV is recorded in the L₃M_{2, 3}M_{2, 3} Auger transition (716 eV) at 1.4 × 10^?2 torr-sec.In the coverage range θ > 1, shifts in the energy of the oxygen Auger peaks are observed. At 5.8 × 10^?3 torr-sec. the KVV (516 eV) and KL₁V (495.2 ± 0.3 eV) transitions show shifts of ?1.5 eV and ?(1.0 ±0.3) eV respectively. No shift up to this coverage is recorded in the KL₁L₁ (480.6 ± 0.3 eV) transition.     

Characteristic electron energy loss structure for clean and oxidized chromium surfaces

AES and EELS spectra have been measured on clean and oxidized chromium surfaces. Auger peaks at 31.0 and 44.0 eV of the oxide are attributed to cross transitions between chromium and oxygen: {M_2,3(Cr)V(Cr)V(O)} and {M₁(Cr)L₁(O)V(Cr)} respectively. Core loss features are consistent with valence band structure with a newly observed loss peak at 41.1 eV for the oxidized surface being ascribed to a core exciton with binding energy E_b = 1.6 eV.     

Coriolis anti-pairing theory of nuclear rotations nuclear meissner-effect

It is shown that the ground-state rotational bands of spherical nuclei are formed by a gradual alignment of the angular momenta of valence nucleons along the rotation axis. The predicted spin and excitation energy values of the first rotational state in ²¹²Po nucleus are J = 16⁺ and E = 2.91 MeV which is in reasonable agreement with the experimental data (J = (18⁺), E = 2.93 MeV).