Effect of NH3 adsorption on the atomic structure of Si(111) √3 × √3 - Al and Si(111) √3 × √3 - Ag surfaces

The room temperature (RT) adsorption of ammonia (NH₃) on Si(111)√3 × √3-Al and Si(111)√3 × √3-Ag surfaces has been studied using LEED and AES. The transformation from Si(111)√3 × √3-Al surface structure to Si(111)1 × 1-(Al, H) upon NH₃ exposure has been found to be similar to the previously observed structural transformation induced by exposure in the atomic hydrogen. It has been demonstrated that the transformation is caused by hydrogen atoms which are generated by NH₃ dissociation on the Si(111)√3 × √3-Al surface. It has been estimated that about 0.1 ML of ammonia molecules is needed to complete the structural transformation. No interaction of NH₃ with the Si(111)√3 × √3-Ag surface has been found. The dissociation of NH₃ molecules is believed to be impossible on this surface     

Observation of Si(111) and gold-deposited Si(111) surfaces using micro-probe reflection high-energy electron diffraction

Observations of clean Si(111) and gold-deposited Si(111) surfaces have been performed using micro-probe reflection high-energy electron diffraction. It was found that many atomic steps on a Si(111) surface run in nearly the same direction, about 9° off the [1̄1̄2] direction. When gold was deposited on this surface at a substrate temperature of about 800°C, 5 × 1, diffuse √3 × √3R30°, sharp √3 × √3 R30° structures and Au clusters appeared on the surface with continuation of the deposition. During the deposition process, it was found that one kind of Si(111) 5 × 1 Au domain grew selectively along these atomic steps and nearly covered the entire surface. A phenomenon of gold clusters moving during the deposition was also observed. These clusters all moved in nearly the same direction so as to climb the atomic steps.     

A structure analysis of Ag-adsorbed Si(111) surface by LEED/CMTA

The Ag induced superstructures on the Si(111) surface have been studied by low energy electron diffraction constant momentum transfer averaging (LEED/CMTA) technique. The vertical displacements of the atoms are determined from the analysis of the specularly reflected (00) beam intensities. Unexpected behavior of the Ag atoms is clarified: For the √3 × √3-Ag surface it is verified that the Ag atoms are embedded in the first double layer of Si, leading to a considerable rearrangement of the substrate. In contrast, for the 3 × 1-Ag surface, the Ag atoms are riding on the Si surface and the reconstruction of the substrate is small.     

Catalytic action of gold atoms on the oxidation of Si(111) surfaces

Auger spectroscopy, electron energy loss spectroscopy and ion depth profiling techniques, under ultra high vacuum conditions, have been used in a comparative study of the oxidation of clean and gold precovered silicon (111) surfaces. Exposure of a Si surface covered by a few Au monolayers to an oxygen partial pressure induces the formation of SiO₄ tetrahedra even at room temperature. In contrast, oxidation under the same conditions of a clean Si(111) surface leads to the well known formation of a chemisorbed oxygen monolayer. In the case of the Au covered surfaces, the enhancement of the oxide growth is attributed to the presence of an AuSi alloy where the hybridization state of silicon atoms is modified as compared to bulk silicon. This Au catalytic action has been investigated with various parameters as the substrate temperature, oxygen partial pressure and Au coverage. The conclusions are two fold. At low temperature (T < 400°C), gold atoms enhance considerably the oxidation process. SiO₄ tetrahedra are readily formed even at room temperature. Nevertheless, the SiO₂ thickness saturates at about one monolayer, this effect being attributed to the lack of Si atoms alloyed with gold in the reaction area. By increasing the temperature (from 20°C to ～400°C), silicon diffusion towards the surface is promoted and a thicker SiO₂ layer can be grown on top of the substrate. In the case of the oxidation performed at temperature higher than 400°C, the results are similar to the one obtained on a clean surface. At these temperatures, the metallic film agglomerates into tridimensional crystallites on top of a very thin AuSi alloyed layer. The fact that the latter has no influence on the oxidation is attributed to the different local arrangement of atoms at the sample surface.     

A leed-aes study of thin Pd films on Si(111) and (100) substrates

A system Pd (deposit)-Si (substrate) has been studied by LEED and AES. Pd₂Si formed on Si(111) became epitaxial after a short time of annealing at a temperature between 300 and 700°C, while the Pd₂Si formed on Si(100) did not, in both cases the surfaces of the Pd₂Si being covered with a very thin Si layer. A sequence of superstructures (3√3 × 3√3), (1 × 1), and (2√3 × 2√3) was observed successively in Pd/Si(111) as the annealing temperature was increased. A (√3 × √3) structure was obtained by sputtering the 3√3 surface slightly. It was found that the √3 structure corresponds to Pd²Si(0001)-(1 × 1) grown epitaxially on Si(111), and that the 3√3 structure comes from the thin Si layer accumulated over the silicide surface, while the 2√3 and 1 structures arise from a submonolayer of Pd adsorbed on Si(111). Superstructures observed on a Pd/Si(100) system are also studied.     

Atomic structure of two-dimensional binary surface alloys: Si(111)-√21 × √21 superstructure

The atomic structures of Au and Ag co-adsorption-induced √21 × √21 superstructure on a Si(111) surface, i.e., (Si(111)-√21 × √21-(Au, Ag)), where the Si(111)-5 × 2-Au surface is used as a substrate, have been investigated using reflection high-energy positron diffraction (RHEPD) and photoemission spectroscopy. From core-level spectra, we determined the chemical environments of Ag and Au atoms present in the Si(111)-√21 × √21-(Au, Ag) surface. From the rocking curve and pattern analyses of RHEPD, we found that the atomic coordinates of the Au and Ag atoms were approximately the same as those of the Au and Ag atoms in other Si(111)-√21 × √21 surfaces with different stoichiometries. On the basis of the core-level and RHEPD results, we revealed the atomic structure of the Si(111)-√21 × √21-(Au, Ag) surface.     

Structural analysis of Si(111)-√21 × √21-(Ag,Cs) surface by reflection high-energy positron diffraction

We have investigated the Si(111)-√21 × √21-(Ag, Cs) superstructure using reflection high-energy positron diffraction. Rocking curve analysis based on the dynamical diffraction theory reveals that Cs atoms are located at a height of 3.04 Å above the underlying √3 × √3-Ag structure and that they form a triangular structure with a side length of 10.12 Å. The structure of the Si(111)-√21 × √21-(Ag, Cs) surface is significantly different from those of the Si(111)-√21 × √21-Ag and Si(111)-√21 × √21-(Ag, Au) surfaces, probably because of the different electronic structures of the alkali and noble metal atoms.     

Enhancement of the room temperature oxidation of silicon by very thin predeposited gold layers

The oxidation of Si(111) surfaces covered with very thin layers of gold is studied by Auger and electron energy loss spectroscopies under ultra high vacuum conditions. It is found that by exposing the Au covered surface to an oxidizing atmosphere, formation of silicon dioxide occurs at room temperature on top of the substrate and the presence of SiO₄ tetrahedra is clearly seen on electron energy loss spectra. In contrast, oxidation under the same conditions of a clean Si(111) surface leads to the formation of an oxygen monolayer and no structure corresponding to Si-O bonds in SiO₄ tetrahedra are observed. This enhancement of the oxidation is attributed to a change in the hybridization state of Si atoms in a gold environment.     

Study of Ag/Si(111) submonolayer interface: II. Atomic geometry of Si(111) (√3 × √3 )R30°-Ag surface

Final state diffraction of Ag 3d X-ray photoelectrons from the Si(111) (√3 × √3)R30°-Ag surface has been measured. From a kinematical analysis of the diffraction patterns, it is found that a buried honeycomb framework of Ag atoms is formed on the surface with lateral displacement of the first Si layer.     

New model for the reconstructed Si(111)7 × 7 and Si(111)√19 × √19−R(±23°5) surfaces

A new model, analogous to static damped oscillations, is proposed to account for various experimental facts obtained recently on Si(111) surfaces presenting either 7 × 7 or √19 × √19 superlattices.     

AES and ELS study of gold deposition on top of hydrogen saturated Si(1 1 1) surfaces

Gold was deposited on top of hydrogen saturated Si(1 1 1) clean surfaces. The electronic nature and atomic intermixing between gold overlayer and silicon substrate were studied by AES and ELS. It is claimed that there is a critical thickness (～ 2 ML), where 1 ML = 7.8 × 10¹⁴ atoms cm^?2 for Si(1 1 1), for gold to induce alloyed metallic overlayer formation on the surface of a specimen due to intermixing reaction independently whether a surface of Si(1 1 1) substrate is saturated with hydrogen atoms or not.     

Adsorption-desorption properties and surface structural chemistry of chlorine on Cu(111) and Ag(111)

The adsorption, desorption, and structural properties of chlorine adlayers on Cu(111) and Ag(111) have been studied by LEED, Auger, Δ?, and thermal desorption measurements. Ancillary experiments were also carried out on cuprous chloride for purposes of comparison with the Cu(111)-Cl data. Chlorine adsorption is rapid on both metals and follows precursor kinetics, the absolute initial sticking probabilities being ~1.0 (Cu) and ~0.5 (Ag). Δ? results suggest that significant depolarisation of the chemisorption bond occurs at high coverages, the maximum values being + 1.2 eV (Cu) and + 1.8 eV (Ag). On Cu(111), adsorption leads to the formation of a sequence of well-ordered phases; in order of increasing coverage, these are as follows: (√3 × √3)R30°, (12√3 × 12√3)R30°, (4√7 × 4√7)R19.2°, and (6√3 × 6√3)R30°. On Ag(111) (√3 × √3)R30°, and (10 × 10) structures are observed. All six structures are susceptible to a straightforward interpretation in terms of coincidence lattices resulting from the progressive uniform compression of a hexagonal layer of Cl atoms. This interpretation is consistent with all the experimental results, and gives values for the nearest-neighbour ClCl spacing on both Cu(111) and Ag(111) which are in good agreement with other work on other surfaces. Chlorine desorbs exclusively as atoms from both metals with first-order desorption kinetics, and apparent desorption energies of 236 (Cu) and 209 (Ag) kJ mol^?1. These values, which depend on an assumed pre-exponential factor of 10¹³ s^?1, are shown to be inconsistent with the thermochemical constraints on the system necessitated by the complete absence of Cl₂ desorption. Lower limits for the pre-exponential factors are then deduced, and the values are found to be consistent with the differences between the CuCl and AgCl systems.     

Exchanges between Si and Pb adatoms on Si(111)

Real-time observation by high-temperature scanning tunneling microscopy of exchanges between Si and Pb atoms on a Si(111)-√3 × √3 surface is reported. The exchange rate is obtained as a function of the temperature. The activation energy of the exchange is about 1.2 eV, and the prefactor, shown to depend on the Pb coverage, is from 2 × 10¹⁰ to 8 × 10¹¹ s⁻¹. This prefactor is much larger than that for the exchange between Pb and Ge adatoms on a Ge(111)-c(2 × 8) surface, indicating that the adatom arrangement greatly influences the exchange mechanism. We also report that metastable 9 × 9 reconstruction appears during Pb desorption.     

Initial growth process and surface structure of Ag on Si(111) studied by low-energy Ion-Scattering Spectroscopy (ISS) and LEED-AES

The growth process of silver on a Si(111) substrate has been studied in detail by low-energy ion-scattering spectroscopy (ISS) combined with LEED-AES. Neon ions of 500 eV were used as probe ions of ISS. The ISS experiments have revealed that the growth at room temperature and at high temperature are quite different from each other even in the submonolayer coverage range. The following growth models have been proposed for the respective temperatures. At room temperature, the deposited Ag forms a two-dimensional (2D) island at around 2/3 monolayer (ML) coverage, where the Ag atoms are packed commensurately with the Si(111)1 substrate. One third of the substrate Si surface remains uncovered there. Then it starts to develop into Ag crystal, and at a few ML coverage a 3D island of bulk Ag crystal grows directly on the substrate. An intermediate layer, which covers uniformly the whole surface before the growth of Ag crystal, does not exist. At high temperatures (>~200°C), the well-known Si(111)√3-Ag layer is formed as an intermediate layer, which consists of 2/3 ML of Ag atoms and covers the whole surface uniformly. These Ag atoms are embedded in the first double layer of the Si substrate. It is concluded that the formation of the √3 structure needs relatively high activation energy which may originate from the large displacement of Si atoms owing to the embedment of the Ag atoms, and does not proceed below about 200°C. The most stable state of the Ag atoms on the outermost Si layer is in the shape of an island, both for the Si(111) surface and for the Si(111)√3-Ag surface.     

A new method of surface structure-analysis by medium energy electron diffraction: distinction between T4 and H3 models for the Si(111)√3 × √3 -In surface

A new method (named GB-MEED) of medium-energy electron diffraction has been invented. This method is used to measure back-scattering medium-energy electron diffraction patterns with a grazing-incident electron beam. It is demonstrated that GB-MEED is sensitive to the structural change of only a few upper layers of the Si(111) surface. A simple model of single-scattering cluster calculation similar to that for X-ray photoelectron diffraction has been applied to analyze presently measured GB-MEED patterns for the Si(111)√3 × √3-In surface. The distinction between T₄ and H₃ models for the Si(111)-√3 × √3-In surface has been made by making the best use of forward focusing of electron-scattering at a medium energy of 1 keV.     

Lead growth on Si(111) surfaces reconstructed by indium

We study the Pb growth on both √3 × √3-In and 4 × 1-In reconstructed Si(111) surfaces at room and low temperature (160 K). The study takes place with complementary techniques, to investigate the role of the substrate reconstruction and temperature in determining the growth mode of Pb. Specifically, we focus on the correlation between the growth morphology and the electronic structure of the Pb films. The information is obtained by using Auger electron spectroscopy, low energy electron diffraction, soft x-ray photoelectron spectroscopy, scanning tunneling microscopy and spot profile analysis-low energy electron diffraction. The results show that, at low temperature and coverage ≤12 ML on the Si(111)√3 × √3-In surface, Pb does not alter the initial semiconducting character of the substrate and three-dimensional Pb islands with poor crystallinity are grown on a wetting layer. On the other hand, for the same coverage range, Pb growth on the Si(111)4 × 1-In surface results in metallic Pb(111) crystalline islands after the completion of a double incomplete wetting layer. In addition, the bond arrangement of the adatoms is studied, confirming that In adatoms interact more strongly with the silicon substrate than the Pb ones. This promotes a stronger Pb-Pb interaction and enhances metallization. The onset of the metallization is correlated with the amount of pre-deposited In on the Si(111) surface. The decoupling of the Pb film from the 4 × 1-In interface can also explain the unusual thermal stability of the uniform height islands observed on this interface. The formation of these Pb islands is driven by quantum size effects. Finally, the different results of Pb growth on the two reconstructed surfaces confirm the importance of the interface, and also that the growth morphology, as well as the electronic structure of the Pb film can be tuned with the initial substrate reconstruction.     

First-principles studies on the Au surfactant on polar ZnO surfaces

The surfactant effect of Au in ZnO nanostructures growth is studied using first-principles slab calculations based on density functional theory. The atomic structure and electronic properties of one monolayer of Au atoms on polar ZnO surfaces are examined. It is found that (1) one monolayer (ML) of Au capping layer on the ZnO polar surfaces may modify the growing properties of ZnO nanostructures by enhancing the binding energy by 0.41 eV/atom for Zn adsorption on the polar surfaces; (2) the Au adlayer on the polar ZnO surfaces seems more active for the adsorption of Zn atoms, which may be at the very heart of the effect that Au acts as catalyst for the growth of the ZnO nanostructures; and (3) total energy calculations show that the gold on-top geometry is energetically favorable than the gold diffused geometry, which may be useful to understand the phenomenon that Au particles are only found at the end of ZnO nanostructures during the growth process.     

Structural investigations of the Yb  Si(111) - 2x1, 5x1 and 3x1 overlayers

The YbSi interface has been investigated in the sub-monolayer regime employing Ion Scattering Spectroscopy (ISS), Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED). Three different structures, YbSi(111) 2x1, YbSi(111) 5x1, and YbSi(111) 3x1, have been established by heat treatments of the interfaces. The structures consist of a stable overlayer of Yb atoms on the Si(111) surfaces. The distance of the Yb atoms to the uppermost layer of Si atoms has been estimated by comparing the YbSi ISS intensity ratio with the predictions of a model based on classical scattering theory and a Thomas-Fermi-Moliére potential. The height of the Yb atoms relative to the substrate toplayer was found to be 1.9 ± 0.3→.     

Low temperature and low pressure CO oxidation on gold clusters supported on MgO(100)

CO oxidation has been investigated on Au/MgO(100) model catalysts at RT and low pressure. The gold particles prepared by UHV evaporation on clean MgO surfaces are characterized by HRTEM. The gold particles are FCC single crystals or multiple twins with five-fold symmetry. Infrared spectroscopy indicates that two types of adsorption sites are present which correspond to loosely and strongly bound CO. The equilibrium CO coverage for the strongly bound CO is smaller than 0.1 ML. CO titration experiments show that oxygen does not dissociate on the gold nanoparticles. The CO oxidation reaction is studied at RT by molecular beam methods. A steady state CO reaction probability up to 0.50 is measured, for the first time at low pressure, for gold particles with a mean size of 1.5 nm. A reaction mechanism is proposed in which CO adsorbed on low coordinated gold atoms reacts with oxygen adsorbed molecularly, possibly at the Au/MgO interface.     

Hydrogen chemisorption on Si(111)√ 3×√ 3R30∘-B passivated surface studied by thermal desorption and scanning tunneling microscopy

Atomic H chemisorption on the Si(111)√ 3×√ 3R30^°-B surface has been studied by thermal desorption spectroscopy (TDS) and scanning tunneling microscopy (STM). The B-modified Si surface is known to be inert towards adsorbates, since the surface dangling bonds of Si adatoms are passivated by B atoms sitting in sub-surface sites. However, it was found that even on a perfectly passivated surface, H is adsorbed on the surface by destroying the original √ 3 × √ 3 structure. STM observations revealed that H exposure led to the creation of defects at surface sites, and H was subsequently adsorbed as Si-monohydride at these sites. H exposure also caused cluster island formation at the top surface. The islands are composed of hydrogenated amorphous Si atoms or B-hydrogen complexes.