Structure and electronic properties of cleaved Si(111) upon Ge adsorption

The effect of ultrahigh vacuum deposition of Ge below and at monolayer coverage onto clean cleaved Si(111) surface held at room temperature is studied by low energy electron diffraction, Auger electron specroscopy and photoemission yield spectroscopy. A well ordered $\text{3}\text{×}\text{3}$ R 30° structure developes at $\text{1}\text{3}$ ML, where it replaces the 2 × 1 initial pattern; it persists at $\text{2}\text{3}$ ML before transforming into a 1 × 1 diagram which fades into increasing background at 1 ML and up. Si surface dangling bonds are replaced at $\text{1}\text{3}$ ML by states associated with Ge-Si bonds and Ge dangling bonds to which states due to Ge-Ge bonds added upon increasing coverage.     

Angle resolved photoemission measurements on AgSi(111) 7 × 7 interfaces

The AgSi(111) interface is investigated by LEED, AES and angle resolved photoemission spectroscopy using 50 eV synchrotron radiation in p-polarization. Results on room temperature (RT) silver growth on Si(111) 7 × 7 are characterized by an evolution of the LEED pattern and of the d band shape which is consistent with 2D island formation in the submonolayer range. When the Ag coverage (Θ) is increased, a progressive build-up of Ag layers occurs with a possible interdiffusion of the atomic constituents. The ordered $\text{Si(111)}\text{3}\text{×}\text{3}\text{R(30°)Ag}$ structure (R₃) obtained by annealing a 1 ML RT deposit gives rise to new interface states near E_F. In contrast to the RT deposit at the same Θ, two well defined d band peaks are present while the bulk Si emission near 3.4 eV is clearly seen. The R₃ data would favour recent crystallographic models which conclude to an embedment of the Ag atoms in a threefold hollow adsorption site.     

Adsorption of CO on clean and oxygen covered Ni(111) surfaces

Adsorption of CO on Ni(111) surfaces was studied by means of LEED, UPS and thermal desorption spectroscopy. On an initially clean surface adsorbed CO forms a √3 × $\text{√3}\text{R30°}$ structure at θ = 0.33 whose unit cell is continuously compressed with increasing coverage leading to a c4 × 2-structure at θ = 0.5. Beyond this coverage a more weakly bound phase characterized by a $\text{√7}\text{2}$ × $\text{√7}\text{2R19°}$ LEED pattern is formed which is interpreted with a hexagonal close-packed arrangement (θ = 0.57) where all CO molecules are either in “bridge” or in single-site positions with a mutual distance of 3.3 Å. If CO is adsorbed on a surface precovered by oxygen (exhibiting an O 2 × 2 structure) a partially disordered coadsorbate 2 × 2 structure with θ_o = θ_co = 0.25 is formed where the CO adsorption energy is lowered by about 4 kcal/mole due to repulsive interactions. In this case the photoemission spectrum exhibits not a simple superposition of the features arising from the single-component adsorbates (i.e. maxima at 5.5 eV below the Fermi level with O_ad, and at 7.8 (5σ + 1π) and 10.6 eV (4σ) with CO_ad, respectively), but the peak derived from the CO 4σ level is shifted by about 0.3 eV towards higher ionization energies.     

Evidence for 2 × 1 building block in the atomic structure of Si{111} 7 × 7

The well known experimental Si {111} 7 × 7 LEED pattern is shown to exhibit systematic enhancement of diffracted intensity at the $\text{1}\text{2}$-order positions, thus revealing the existence of 2 × 1 or 2 × 2 structural components in the 7 × 7 structure with a single domain Si {111} 2 × 1 cleaved structure reveals remarkable similarities. The conclusion is that the fundamental building block of the 7 × 7 structure is a 2 × 1 subunit which closely resembles the unit cell of the cleaved 2 × 1 structure.     

Interpretation of a new feature in photoemission from Cu based alloys with polyvalent solutes

In our recent angle resolved photoemission studies of oriented single crystal surface of $\text{Cu}$Al and $\text{Cu}$Ge solid solutions we had found a new structure lying between 4 and 5 eV below the Fermi energy, which could not be related to either the bulk or the surface states in the random alloy. To understand its nature and origin we report and discuss photoemission measurements from Cu films, submonolayer to a monolayer thick, deposited on the Al(111) and $\text{Cu}\text{Al(111)(}\text{3}\text{×}\text{3}\text{R}\text{30°)}$ alloy surfaces and from Al and Zn alloys containing dilute Cu impurities. Some experiments on the (100) surfaces in the various cases were also carried out. On the basis of these results, we suggest that the aforementioned new photoemission feature is characteristic of Cu clusters and isolated Cu impurities in polyvalent impurity-rich environment. These clusters probably lie at the topmost layer of the $\text{Cu}$Al and $\text{Cu}$Ge alloy surfaces.     

Adsorption of ethylene on the Pt(100) surface

Clean Pt(100) surfaces with bulk-like 1×1 structure, or the stable, reconstructed 5×20 structure and held at 200 or 330 K were exposed to ethylene. Ultraviolet photoemission spectroscopy identified the nature of the adsorbed species which depends on the structure and temperature of the clean surface and the amount adsorbed. It is ethylene on the 5 × 20 structure at 200 K, a vinyl radical on the same surface at 300 K up to half a monolayer, the remainder being added as acetylene; it is acetylene on the 1 × 1 surface at 330 K and a mixture of acetylene, vinyl and ethylene on the 1 × 1 surface at 200 K. Whatever the nature of the adsorbate, the surface coverage θ increased with exposure ? as $\text{(1 ? θ = C?}{}^{\mathrm{<mtext>?</mtext><mtext>1</mtext><mtext>3</mtext>}}\text{)}$. By contrast, on a surface covered with any C₂ hydrocarbon acetylene adsorbs with Langmuir kinetics. The kinetics are explained in terms of the relationship between the attraction an approaching molecule experiences from the bare surface and its Van der Waals repulsion from preadsorbed molecules.     

Low energy electron diffraction and electron spectroscopy studies of the clean (110) and (100) titanium dioxide (rutile) crystal surfaces

Low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), electron energy loss (ELS) and ultraviolet photoemission spectroscopies (UPS) were used to study the structures, compositions and electron state distributions of clean single crystal faces of titanium dioxide (rutile). LEED showed that both the (110) and (100) surfaces are stable, the latter giving rise to three distinct surface structures, viz. (1 × 3), (1 × 5) and (1 × 7) that were obtained by annealing an argon ion-bombarded (100) surface at ~600,800 and 1200° C respectively. AES showed the decrease of the $\text{O(510 eV)}\text{Ti(380 eV)}$ peak ratio from ~1.7 to ~1.3 in going from the (1 × 3) to the (1 × 7) surface structure. Electron energy loss spectra obtained from the (110) and (100)?(1 × 3) surfaces are similar, with surface-sensitive transitions at 8.2, 5.2 and 2.4 eV. The energy loss spectrum from an argon or oxygen ion bombarded surface is dominated by the transition at 1.6 eV. UPS indicated that the initial state for this ELS transition is peaked at ?0.6 eV (referred to the Fermi level E_F in the photoemission spectrum, and that the 2.4 eV surface-sensitive ELS transition probably arises from the band of occupied states between the bulk valence band maximum to the Fermi level. High energy electron beams (1.6 keV 20 μA) used in AES were found to disorder clean and initially well-ordered TiO₂ surfaces. Argon ion bombardment of clean ordered TiO₂ (110) and (100)?(1 × 3) surfaces caused the work function and surface band bending to decrease by almost 1 eV and such decrease is explained as due to the loss of oxygen from the surface.     

Angle-resolved photoemission of the c(2 × 2) and c(3 × 1) oxygen overlayers on Fe(110)

Angle-resolved photoemission spectroscopy utilizing synchrotron radiation has been used to study the band structure of the c(2×2) and (3×1) oxygen overlayers on Fe(110). The symmetries of the O-2p-derived states at the center of the surface Brillouin zone $\text{(}\text{Γ}\text{)}$ were identified using polarized light. At $\text{Γ}$ the p_xp_y- and p_z-derived levels are at about 5.5 and 7.0 eV below the Fermi level, respectively, for both ordered overlayers. The p-states of the c(2×2)-O structure show very little dispersion (?0.1 eV) with $\text{k}{}_{\mathrm{}}$. On the other hand, the c(3×1)-O overlayer exhibits considerable dispersion of ～1.6 eV. The essential features of the measured dispersion are reproduced well by the dispersion predicted in a qualitative way for an isolated c(3×1) oxygen monolayer.     

The absorption of Ag on Ge(100)-(2 × 1)

The initial stages of interface formation for Ag deposited onto Ge(100)-(2 × 1) were studied with high-energy electron diffraction and high- resolution photoemission. The surface core-level energies for clean Ge(100)-(2 × 1) were not changed with the deposition of about one monolayer of Ag, indicating that there was no chemical reaction or atomic intermixing. The Ag nucleated at a coverage of about $\text{1}\text{3}$ monolayer and showed three-dimensional growth for higher coverages.     

Structure of the Ag on Si(111) 7 × 7 interface by means of surface exafs

Polarization dependent surface extended X-ray absorption fine structure (SEXAFS) measurements are used to determine the structure of the Ag on Si(111)7 × 7 system at the early stages (< 3 monolayers (ML)) of interface formation. At room temperature (RT) Ag is found to initially (< 0.5 ML) chemisorb in the threefold hollow site, approximately 0.7 Å above the outermost Si layer with an average Ag-Si distance of 2.48±0.05 Å. Above monolayer coverage the SEXAFS spectrum is dominated by the Ag-Ag distance indicating Ag island formation on the surface. Upon heating (200 ?T? 600°C) a (√3 ×√3)R30° LEED pattern is observed. At the lowest coverage ( < 0.7 ML) this pattern is determined to arise from Ag atoms which are embedded in the threefold hollows, ~ 0.7 Å below the first and above the second Si layer, with a Ag-Si distance of 2.48 ± 0.04 Å. At higher coverage ($\text{\$}\text{?}$1 ML) Ag clusters are found to grow on this interface with the same Ag-Ag distance as in Ag metal. Our results are discussed in the context of previous experimental and theoretical results.     

Study of Ag/Si(111) submonolayer interface: I. Electronic structure by angle-resolved UPS

Angle-resolved ultraviolet photoelectron spectra have been measured for well defined Ag/Si(111) submonolayer interfaces of (1) $\text{Si(111)(}\text{3}\text{×}\text{3}\text{)R30°-Ag}$, (2) “Si(111)(6 × 1)-Ag”, and (3) Ag/Si(111) as deposited at room temperature. Non-dispersive and very narrow (FWHM ～ 0.4–0.5 eV) Ag 4d derived peaks are found at 5.6 and 6.5 eV below the Fermi level for surface (1) and at 5.3 and 6.0 eV for surface (2). Dispersions of sp “binding” states in the energy range between E_F and Ag 4d states have been precisely determined for surface (1). Electronic structures similar to those of the Ag(111) surface, including the surface state near E_F, have been observed for surface (3).     

Room temperature adsorption and growth of Ga and In on cleaved Si(111)

Low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and photoemission yield spectroscopy (PYS) measurements have been performed on a set of ultrahigh vacuum cleaved Si(111) surfaces with different bulk dopings as a function of Ga or In coverage θ. The metal layers are obtained by evaporation on the unheated substrate and θ varies from zero to several monolayers (ML). First, the 2×1 reconstruction of the clean substrate is replaced by a $\text{3}\text{×}\text{3}$ R30° structure at $\text{1}\text{3}$ ML, meanwhile the dangling bond peak at 0.6 eV below the valence band edge E_vs is replaced by a peak at 0.1 eV for Ga or 0.3 eV for In, below E_vs. At the same time, the ionization energy decreases by 0.4 eV (Ga) or 0.6 eV (In), while the Fermi level pinning position gets closer to the valence band edge by about 0.1eV. Upon increasing θ, new LEED structures develop and the electronic properties keep on changing slightly before metallic islands start to grow beyond θ ～1 ML.     

Chlorine adsorption on copper: II. Photoemission from Cu(001)c(2 × 2)-C1 and Cu(111)(√3 × √3)R30°-Cl

We have studied high-resolution angle-resolved and photon-polarization dependent photoemission from chlorine adsorbed on Cu(OOl) and Cu(111). Chlorine forms a c(2 × 2) saturation overlayer on Cu(OO1) and adsorbs dissociatively as revealed by LEED and XPS. Several two-dimensional energy bands on Cu(001)c(2 × 2)-Cl could be iden along the $\text{}\text{?}$gG M? and $\text{}\text{?}$gG M? lines of the surface Brillouin zone, their respective mirror symmetry and their orbital character could be determined. An interpretation of these bands is given in terms of the interaction of the ordered overlayers with particular substrate bulk bands. Besides the appearance of adsorbate-induced two-dimensional bands drastic changes are resolved in the substrate d-band emission region. These can be explained almost exclusively by surface umklapp processes involving reciprocal lattice vectors of the ordered adsorbate mesh. Supplementary studies of the Cu(111) (√3 × √3)R30°-Cl system support our ideas. We discuss some important implications of our results for the interpretation of angle-resolved photoenussion spectra from ordered adsorbate layers.     

The properties of K and coadsorbed CO + K on Ru(001): I. Adsorption,desorption, and structure

An extensive photoemission and LEED study of K and CO+K on Ru(001) has been carried out. In this paper the LEED and some XPS results together with TPD and HREELS data are presented in terms of adsorption, desorption. and structural properties, and their compatibility is discussed. Potassium forms (2 × 2) and $\text{(}\text{3}\text{×}\text{3}\text{)R30°}$ overlayers below and near monolayer coverage, and multilayer bonding and desorption is similar to that of bulk K. The initial sticking coefficients for CO adsorption on K predosed surfaces are correlated with the initial K structure, and s₀ and CO saturation coverages decrease with increasing K coverage. Two well-characterized mixed CO+K layers have been found which are correlated with predosed (2 × 2) K and $\text{(}\text{3}\text{×}\text{3}\text{)R30°}\text{K}$. They have CO to K ratios of 3:2 and 1:1, and lead to LEED patterns with (2 × 2) and (3 × 3) symmetry, respectively. The molecule is believed to be sp² rehybridized under the influence of coadsorbed K, leading to stronger CO-Ru and weaker C-O bonds as indicated by the TPD and HREELS results, and to stand upright in essentially twofold bridges.     

Composition,structure, surface states,and O2 sticking coefficient for differently prepared GaAs(1&#x0304;1&#x0304;1&#x0304;)As surfaces

The polar GaAs(1&#x0304;1&#x0304;1&#x0304;)As surface can be prepared in three stable and ordered states: two by molecular beam epitaxy (MBE), namely the As-stabilized and the Ga-stabilized states and one simply by ion bombardment and annealing at 770 K. The respective LEED structures are $\text{(2 × 2), (}\text{19}\text{×}\text{19}\text{)}\text{R}\text{23.4°}$, and (1 × 1) with a diffuse faint (3 × 3) superstructure. Auger measurements and the comparison with the stoichiometric cleaved (110) surface show that there are different As concentrations in the first atomic layer associated with each of these three surfaces. Whereas about 10 to 15% of the first As layer appears to be missing on the (2 × 2) surface, about 50% is missing on the $\text{19}$ surface. On the (1 × 1) surface the first As layer is removed completely. The intensity of emission from the surface sensitive states between 1 and 4 eV below the valence band edge, as seen by angular resolved UPS, roughly corresponds to the amount of As at the surface thus confirming their interpretation as As-derived surface states. The inital sticking coefficent for oxygen depends strongly on the surface structure: ～10^?8 for the (2 × 2), ～10^?7 for the $\text{19}$, and ～10^?4 for the (1 × 1) surface. The sticking coefficient does not depend on the surface concentration of As but rather on the degree of saturation of dangling bonds on Ga atoms.     

Adsorbate band structure of bromine on Pd(111) studied by angle resolved ultraviolet photoemission

The photoemission spectra from Pd(111) and from the Pd(111)-Br(√3 × √3)R30° system are reported; some new features for the clean surface are detected and assigned. The principal effect of the Br overlayer on the direct transitions is a general intensity reduction. Three adsorbate derived features are detected; one at 4 eV with no dispersion is probably an adsorbate-induced feature of the metal, and the other two which disperse are assigned as Br 4p_x, (4.5 eV) and Br 4p_z (6 eV) at $\text{}\text{?}$gG.     

The surface structure of Si(100) surfaces using averaged LEED: II. The (2×1) clean surface structure

Constant momentum transfer averaged LEED data from a Si(100) (2 × 1) clean surface structure have been produced for the $\text{(00), (10), (11), (}\text{1}\text{2}\text{0)}$ and $\text{(1}\text{1}\text{2}\text{)}$ beams. All averages show strong features in addition to those attributable to single scattering from the bulk. If this structure is assumed to also originate from single scattering, the surface reconstruction must be deep (>^～4 layers). Alternatively this structure can be ascribed to multiple scattering. As data from the Si(100) (1 × 1)H surface structure produced “good” averaging over an identical range of data, this latter conclusion has considerable bearing on the future usefulness of this averaging approach to surface structure analysis by LEED.     

Angle-of-incidence dependence in angle-resolved photoemission from chemisorbed molecules: c(2 × 2)O,c(2 × 2)5, and CO on Ni(100)

We have measured the angular distribution of photoemitted electrons from c(2 × 2)O, c(2 × 2)S, and CO adsorbed on a Ni(100) substrate for various independently set angles of incidence of unpolarized light at 21.2 eV. We have found that these systems have very different dependence on angle of incidence, depending upon which components of the vector potential of the light ($\text{A}$) are responsible for emission. Because the incident and reflected light combine to form a standing wave at a metal surface, the phase relationships between components of $\text{A}$ parallel and perpendicular to the surface play an important role in determining the effective orientation and magnitude of A at the emission site. We compare our measurements with macroscopic $\text{A}$ fields, calculated via the Fresnel relations, which lead to a general understanding of the effects. We further propose a method for expediting photoemission calculations by projecting out components of $\text{A}$ which preserve their phase relationships.