Changes in electrical properties in α- and γ-exposed PADC track detector

The changes in the dielectric properties and temperature dependence of the d.c. conductivity of α-exposed poly allyl diglycol carbonate (PADC) have been studied. On α-irradiation the dielectric constant (′) as a function of frequency has been found to decrease significantly. The temperature dependence of resistivity in pristine and γ-irradiated samples is of the form ρ(T)=ρ_∝ exp(T₀/T) which can be attributed to conduction of thermally generated carriers. In case of (γ+α) irradiated samples the temperature dependence of resistivity is of the form ρ(T)=ρ_∝ exp(T₀/T)^1/2 which is due to one-dimensional hopping of carriers.     

Surface-field induced interband tunneling in InAs

Metal/insulator/semiconductor junctions are prepared on degeneratep-type InAs substrates with hole concentrations ranging from 2.3×10¹⁷ cm^–3 to 2.7×10¹⁸ cm^–3. The low work function of the top metal Yb, Al, or Au and charged interface states influence a two-dimensional (2D) electron inversion layer at the InAs surface. The insulator barrier that is formed by thermal oxidation is designed sufficiently thin, so that the bias voltage applied at the metal electrode mainly drops across the depletion layer separating the electron channel from the bulk. The current-voltage (I–V) characteristics exhibit strong negative differential conductance due to interband, tunneling from the 2D subband into the 3D valence band with peak-to-valley current ratios up to 3.1, 18, and 32 at 300 K, 77 K, and 4.2 K, respectively. In agreement with a theoretical model based on coherentelastic tunneling, the form of the I–V curves resembles those of double-barrier resonant tunnel devices rather than those of 3D Esaki diodes. The series resistance is obtained from the saturation of the differential conductance dI/dV at high forward bias and from the shift of structures in d² I/dV ² arising from phonon assisted tunneling.Dedicated to G. Lautz on the occasion of his 65th birthday     

Temperature accelerated dielectric breakdown of PECVD low-k carbon doped silicon dioxide dielectric thin films

The dielectric breakdown strength of carbon doped silicon dioxide thin films with thickness d from 32 nm to 153 nm is determined at 25 °C, 50 °C, 100 °C, 150 °C and 200 °C, using I–V measurements with metal-insulator-semiconductor (MIS) structures. It is found that the dielectric breakdown strength, E_B, decreases with increasing temperature for a given film thickness. In addition, a film thickness dependence of breakdown is also observed, which is argued to show an inverse relation to thickness d in the form of E_B∝(d-d_c)^-n. The exponential parameter n and critical thickness limit d_c also exhibit temperature dependent behavior, suggesting a temperature accelerated electron trapping process. The activation energy for the temperature acceleration was shown to be thickness dependent, indicating a thickness dependent conduction mechanism. It is thereafter demonstrated that for relatively thick films (thickness >50 nm), the conduction mechanism is Schottky emission. For relatively thin films (thickness <50 nm), the Schottky conduction mechanism was obeyed at low field region while FN tunnelling was observed as a prevail one in the high field region. PACS 73.40.Qv     

Studies of the quantum Hall to quantum Hall insulator transition in InSb-based 2DESs

The temperature dependence of ρ_xx is studied in the vicinity of the quantum Hall to quantum Hall insulator transition (ν=1→0) in InSb/InAlSb based 2DESs. ρ_xx displays a symmetric temperature dependence about the transition with on the QH side and on the insulating side. A plot of 1/T₀ for successive ν displays power-law divergence with 1/T₀∝|ν−ν_c|^−γ,² with γ=2.2±0.3. This critical behavior in addition to the behavior expected of the quantum transport regime confirms that the QH/QHI transition is indeed a good quantum phase transition.     

Conductance Spectra of Carbyne Transverse to Carbon Chains. Is It Related to the Soliton Lattice?

The influence of the thickness of an oriented carbyne film on the conductance of a special sample was investigated with an electric field of up to 1.8 ⋅ 10⁶ V/cm applied transverse to the carbon chains. A steplike dependence of the conductance on the thickness was observed. The general shape of the current-voltage characteristics, I ∝ U ^2.3, changes to I ∝ U ² when the thickness corresponding to a rapid change of conductance is attained. The characteristics presumably correspond to the space-charge limited current in the presence or absence of the trap band within the carbyne band gap. We propose the formation of a charge-topological soliton lattice at “magic” thicknesses which results in a layered structure of the film and in a bandlike conduction transverse to the chains.     

Determination of the (Na) Sternheimer antishielding factor by Na NMR spectroscopy on sodium oxide chloride, Na3OCl

The (Na⁺) Sternheimer antishielding factor γ_∞ (Na⁺) was determined by ²³Na NMR spectroscopy on sodium oxide chloride, Na₃OCl. The quadrupolar coupling constant of the sodium ion in Na₃OCl was determined to QCC=11.34 MHz, which presents the largest coupling constant of a sodium nucleus observed so far. Applying a simple point charge model, the largest principal value of the electric field gradient at the sodium site was calculated to V_zz=−6.76762·10²⁰ V/m². From these values we calculated the (Na⁺) Sternheimer antishielding factor to γ_∞ (Na⁺)=−5.36. In sodium oxide, Na₂O, we observed an isotropic chemical shift of δ_CS=55.1 ppm, referenced to 1 M aqueous NaCl (δ=0 ppm).     

On conformal Killing 2-form of the electromagnetic field

Let D:C^∞Λ^pM→C^∞(T^*MΛ^pM) be the first order linear differential operator on an n-dimensional (1≤p≤n−1) pseudo-Riemannian manifold (M,g). We have by the representation theory of orthogonal group, that the tangent bundle of this operation decomposes into the orthogonal and irreducible sum of forms of degree p+1 (which gives the exterior differential d), the forms of degree p−1 (defining the codifferential d^*) and the trace-free part of the partial symmetrization (the corresponding first order operator is denoted by D). The general forms in the kernel of D are closely related to conformal Killing vector fields, called conformal Killing p-forms, while those in kernel of d are called closed conformal Killing p-forms or, according to another terminology, planar p-forms. In particular an arbitrary planar 1-form ω is dual (by g) to the special concircular vector field ξ. We consider some local properties for the closed conformal Killing p-forms. As an application we present examples of decomposition into irreducible components for the electromagnetic field 2-form ω and its covariant derivative in four-dimensional space–time. In particular, we prove that the energy–momentum tensor T of the electromagnetic field is a symmetric conformal Killing tensor if the electromagnetic field 2-form ω is a conformal Killing form.     

On the spectrum of a random walk on the discrete Heisenberg group and the norm of Harper''s operator

Harper's operator is the self-adjoint operator on defined by

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. We first show that the determination of the spectrum of the transition operator on the Cayley graph of the discrete Heisenberg group in its standard presentation, is equivalent to the following upper bond on the norm of H_θ,: H_{θ,≤ 2(1 + √2 + cos(2πθ))}. We then prove this bound by reducing it to a problem on periodic Jacobi matrices, viewing H_θ, as the image of H_θ = U_θ + _θ^* + V_θ + V_θ^* in a suitable representation of the rotation algebra A_θ. We also use powers of H_θ to obtain various upper and lower bounds on H_θ = maxH_θ,. We show that “Fourier coefficients” of H_θ^k in A_θ have a combinatorial interpretation in terms of paths in the square lattice ². This allows us to give some applications to asymptotics of lattice paths combinatorics.     

Thermal property of binary tetrahedral semiconductors

In this paper we present an expression relating the lattice thermal expansion coefficient α_L (10⁻⁶ K⁻¹) for the A^IIIB^V and A^IIB^VI semiconductors with the product of ionic charges (Z₁Z₂), melting temperature (T_m) and nearest neighbor distance d (Å). The lattice thermal expansion coefficient of these compounds exhibit a linear relationship when plotted on a log–log scale against the melting temperature (T_m), but fall on different straight lines according to the ionic charge product of the compounds. A good agreement has been found between the experimental and calculated values of the lattice thermal expansion coefficient for A^IIIB^V and A^IIB^VI semiconductors.     

Macroscopic and microscopic parameters of laser dye solvents: m-xylene and dioxane

For the laser designer and other users the optical, electrical and refractive parameters have been obtained for pure nonpolar laser dye solvents m-xylene and dioxane. The refractive index (n) and its thermo-optic constant (dn/dT) at argon laser wavelength 514.5 nm and He–Ne laser wavelength 632.8 nm, are measured. The values of n and dn/dT are used to calculate the optical permittivity ε=n² and its variation with temperature dε/dT. Applying Cauchy's equation the optical and dielectric dispersion (dn/dλ and dε/dλ) are determined. The variation of −dn/dT, −dε/dT, molar refractivity and thermal volume expansion coefficient as a function of wavelength are calculated and represented. Furthermore Cauchy's constants A and B as a function of temperature are plotted. The specific and molar refractivities, specific and molar dispersivity total polarizability, distortion polarizability, ratio of atomic to electronic polarizability, molecular radius, relaxation time, electric susceptibility characteristic impedance, and other physical parameters were calculated. Additionally, density, thermal linear expansion coefficient and molar polarization as a function of temperature were calculated at the laser wavelengths 514.5 nm.     

Dispersion relations for stark energy shifts in hydrogen atom

On the basis of an approximate but nonperturbative expression for the energy shift δE in the ground state of the hydrogen atom in the presence of an electric field of strength , we deduce that δE has a branch point at = 0, and an asymptotic behavior ln as → ∞. These properties lead to a twice-subtracted dispersion relation for δE as a function of . The dispersion relations in conjunction with the WKB approximation and the perturbation series allow us to (i) deduce the large-n behavior of the coefficient of ⁿ in the perturbation series for δE( ) including 1/n corrections and (ii) obtain the energy shift and the level width of the ground state for a large range of values of . The agreement with the earlier numerical calculations is very satisfactory.     

Formation of thermally stable low-resistance Ti/W/Au ohmic contacts on n-type GaN

A Ti(12 nm)/W(20 nm)/Au(50 nm) metallization scheme has been investigated for obtaining thermally stable low-resistance ohmic contacts to n-type GaN (4.0×10¹⁸ cm^-3). It is shown that the current–voltage (I–V) characteristics of the samples are abnormally dependent on the annealing temperature. For example, the samples that were annealed at temperatures below 750 °C for 1 min in a N₂ ambient show rectifying behavior. However, annealing the samples at temperatures in excess of 850 °C results in linear I–V characteristics. The contact produces a specific contact resistance as low as 8.4×10^-6 Ω cm² when annealed at 900 °C. It is further shown that the contacts are fairly thermally stable even after annealing at 900 °C; annealing the samples at 900 °C for 30 min causes insignificant degradation of the electrical and structural properties. Based on glancing angle X-ray diffraction and Auger electron microscopy results, the abnormal temperature dependence of the ohmic behavior is described and discussed. PACS 72.80.Ey; 73.40.Cg; 73.20.At; 79.60Bm; 73.40.Gk     

Two models for the transport properties of YBa2Cu3O7−δ in its normal state

The high-temperature superconductor YBa₂Cu₃O_7−δ in its normal state, shows unusual dependence of its transport properties on the oxygen deficiency parameter δ and on temperature: for δ ≈ 0 both the resistivity and the Hall number rise linearly with temperature, while the thermoelectric power is very small. In order to interpret this unusual combination of properties we propose two alternative models, a two-dimensional tight-binding wide-band model, and a narrow-band model. In the first case we assume scattering by a fully excited boson field, with a mean free path Λ ∝ 1/T. In the second model we assume a band composed of two parts, where the upper smaller part does not contribute to transport (as would result from the existence of a mobility edge), and Λ is independent of temperature. The calculated results are compared with experiments.     

Conductometric and thermodynamic studies on the ionic association of HCOONH4, phCOONH4, HCOONa and phCOONa in aqueous–organic solvents

The specific conductance of ammonium formate, ammonium benzoate, sodium formate and sodium benzoate in (10%, 20% and 30% (W/W)) methanol–water, ethanol–water and glycerol–water mixtures at different temperatures (293, 298, 303 and 308 K) was measured.The molar conductance (Λ), limiting molar conductance (Λ₀), limiting ionic conductance (λ₀), association constants (K_A), the activation energy of the transport process (E_a), Walden product (Λ₀η₀), hydrodynamic radii (1/r_s⁺ + 1/r_s⁻)^− 1, transfer numbers of the studied ions (t), standard thermodynamic parameters of association (ΔG_A, ΔH_A and ΔS_A) were calculated and discussed.The results show that, the molar conductance and the limiting molar conductance values were decreased as the relative permittivity of the solvent decreased while, the association constant increased. Also the results show that the molar conductance, the limiting molar conductance and the association constant values were increased as the temperature increased indicating that the association process is an endothermic one.     

Electrical conductivity improvement of strontium titanate doped lead vanadate glasses by nanocrystallization

The structural and electrical conductivity (σ) of annealed SrTiO₃–PbO₂–V₂O₅ glasses were studied. The annealing of initially glass samples leads to formation of nanocrystalline grains embedded in the glassy matrix. XRD patterns of the glass–ceramic samples show that nanocrystals were embedded in the glassy matrix with an average grain size of 32 nm. The glass–ceramic nanocrystals obtained by annealing at temperatures close to the crystallization temperature T_c exhibit enhancement of electrical conductivity up to four orders of magnitude than initially glasses. The enhancement of the electrical conductivity due to annealing was attributed to two interdependent factors: (i) an increase of concentration of V⁴⁺–V⁵⁺ pairs; and (ii) formation of defective, well-conducting regions along the glass–crystallites interfaces. From the conductivity temperature relation, it was found that small polaron hopping model was applicable at temperature above θ_D/2 (θ_D, the Debye temperature). The electrical conduction at T >θ_D/2 was due to non-adiabatic small polaron hopping (SPH) of electrons between vanadium ions. The parameters obtained from the fits of the experimental data to this model appear reasonable and are consistent with glass composition.     

Densities, excess molar volumes, and viscosities of the binary and ternary mixtures of {diethylcarbonate (1) + p-chloroacetophenone (2) + 1-hexanol (3)} at 303.15 K for the liquid region and at ambient pressure

Densities ρ, dynamic viscosities η, of the ternary mixture (diethylcarbonate + p-chloroacetophenone + 1-hexanol) and the involved binary mixtures (diethylcarbonate + p-chloroacetophenone), (diethylcarbonate + 1-hexanol), and (p-chloroacetophenone + 1-hexanol) have been measured over the whole composition range at 303.15 K for the liquid region and at ambient pressure. The data obtained are used to calculate excess molar volumes V_m^E, excess partial molar volumes V¯_m,i^E, limiting excess partial molar volumes V¯_m,i^E,∞, and viscosity deviations Δη, of the binary and ternary mixtures. The data of excess molar volumes of the binary systems were fitted to the Redlich–Kister equation while for the ternary system the Cibulka equation was used. The McAllister's four body, and Kalidas and Laddha interaction models are used to correlate the kinematic viscosities of binary and ternary mixtures, respectively, to determine the fitting parameters and the standard deviations. The experimental data of the constitute binaries and ternary are analyzed to discuss the nature and strength of intermolecular interactions in these mixtures.     

Study of the structure and refractive parameters of diethylamine and triethylamine

The refractive index (n) and thermal coefficient of the refractive index (dn/dt) are measured at four wavelengths for the diethylamine and triethylamine. The measurements are carried out using the Bellingham+Stanley model 60/ED high-accuracy Abbe refractometer. The optical permittivity (ε) and its variation with temperature are calculated. Applying the Cauchy equation, the following refractive properties are obtained: the optical dispersion dn/dλ, the dielectric dispersion dε/dλ, the variation of -dn/dT, dε/dT, as a function of wavelength (λ), and Cauchy's constants against temperature. Additionally, molar refractivity versus temperature and wavelength are determined.     

Electrical properties of perovskite-type La(Cr1−xMnx)O3+δ

Perovskite-type La(Cr_1−xMn_x)O_3+δ (0.0x1.0) was synthesized using a sol–gel process. The crystal structure of La(Cr_1−xMn_x)O_3+δ changes from orthorhombic to rhombohedral at x=0.6. The Mn⁴⁺ ion content increases monotonically in the range 0.2x1.0. The magnetic measurement of La(Cr_1−xMn_x)O_3+δ indicates that a Mn³⁺ ion is a high-spin state with (d)³(dγ)¹. The variation of the average (Cr, Mn)-O distance is explained by ionic radii of the Cr³⁺, the Mn³⁺, the Mn⁴⁺ ions. Since the log σT–1/T curve is linear and the Seebeck coefficient (α) is independent of temperature, it is considered that La(Cr_1−xMn_x)O_3+δ is a p-type semiconductor and exhibits the hopping conductivity.     

Temperature dependence of the inelastic scattering in a GaAs/n-AlGaAs selectively doped heterojunction with InGaAs quantum dots

Inelastic scattering processes of two-dimensional electron gas (2DEG) have been investigated in a inverted GaAs/n-AlGaAs heterojunction with self-organized InGaAs quantum dots (QDs) embedded near the 2DEG channel where the electron population in the QDs is controllable by the gate voltage V_g. By analyzing magnetoresistance, the inelastic scattering time τ_ε have been evaluated as functions of V_g at 0.6, 0.8, 1.2, and 1.7 K. It is found that τ_ε increases with V_g below 0.8 K and decreases above 1.2 K, which suggests that the dominant scattering mechanisms below 0.8 K and above 1.2 K are different. To interpret this behavior, we have calculated the inelastic scattering time theoretically. It is found that the experimental data are well explained by a theoretical model where a 2D electron is considered to be inelastically scattered both by the other 2D electrons and by the trapped electrons in QDs. It is also found that the 2DEG–2DEG scattering is dominant at low temperature, while the 2DEG-QDs scattering becomes important as the temperature increases.     

Statistics of ideal randomly branched polymers in a semi-space

We investigate the statistical properties of a randomly branched 3-functional N-link polymer chain without excluded volume, whose one point is fixed at the distance d from the impenetrable surface in a 3-dimensional space. Exactly solving the Dyson-type equation for the partition function Z(N, d )= N^-θe^γN in 3D, we find the “surface” critical exponent θ = , as well as the density profiles of 3-functional units and of dead ends. Our approach enables to compute also the pairwise correlation function of a randomly branched polymer in a 3D semi-space.