Electrically stimulated motion of dislocations in a constant magnetic field

This paper reports on the results of investigations into the dislocation mobility in n-Si single crystals (N _d =5×10²⁴ m^?3) upon simultaneous exposure to electric (j=3×10⁵ A/m²) and magnetic (B≤1 T) fields. It is found that the introduction of dislocations (≈10⁹ m^?2) into dislocation-free silicon doped with phosphorus leads to the appearance of the paramagnetic component of the magnetic susceptibility. The paramagnetic component increases with an increase in the dopant concentration. Similar transformations in silicon account for the formation of magnetically sensitive impurity stoppers that respond to external magnetic perturbations. An analysis of the behavior of dislocations in electric and magnetic fields has revealed a parabolic dependence of the dislocation path length on the magnetic induction B. The effective charges and mobilities of dislocations are numerically calculated from the results obtained. A model is proposed according to which the observed increase in the dislocation mobility is associated with the decrease in the retarding power of magnetically sensitive stoppers due to a local change in the magnetic characteristics of the material and the spin-dependent reactions stimulated by a magnetic field.     

Dislocation-induced photoluminescence in silicon crystals of various impurity composition

The effect of oxygen on the dislocation-induced photoluminescence (DPL) spectra at 4.2 K is studied in silicon crystals with different impurity compositions subjected to plastic deformation at temperatures above 1000°C. A strong effect of doping impurities on the DPL spectra is observed for concentrations above 10¹⁶ cm^?3. It is shown that the peculiarities of many DPL spectra in silicon can be explained by assuming that the D1 and D2 lines are associated with edge-type dislocation steps on glide dislocations.     

Dislocation mobility in C<Subscript>60</Subscript> fullerite crystals

The dependences of the path of leading dislocations in indentation rosette rays on the load, the loading time, and the indentation temperature in the range 260 < T ≤ 373 K were studied for C₆₀ fullerite crystals. The dislocation mobility parameters are estimated: the exponent m characterizing the stress dependence of the dislocation velocity depends on the structural perfection of the crystal and ranges from 2.3 to 24.5, the activation energy for dislocation motion ΔH ₀ ? (0.4–0.5) eV, and the velocity of leading dislocations in indentation rosette rays v _l ? 10^?5?10^?4 cm/s. The data from micro-and macromechanical experiments are shown to agree with each other. The dislocation mobility is assumed to be controlled by the dislocation interaction with local barriers.     

Optical investigation of dysprosiumaluminumgarnet (DyAlG)

The absorption spectrum of the transitions⁶ H _15/2→⁶ F _3/2,⁶ F _5/2 in Dysprosiumaluminumgarnet (DyAlG) is investigated. In the antiferromagnetic state (T _N =2,49°K) a splitting of the crystal field levels by an internal magnetic field is observed. The splitting of the lowest crystal field level I of the groundterm in the internal field is (5,2±0,5) cm^?1, extrapolated to 0°K.     

Electrical properties of the SiC/Si composite and the biomorphic SiC ceramic fabricated from spanish beech wood

A study has been made of the dependences of the electrical resistivity and the Hall coefficient on the temperature and magnetic field for the SiC/Si composite fabricated from spanish beech wood and bio-SiC, a high-porosity material formed by chemical extraction of silicon from this composite. The main charge transport parameters of these materials have been determined and analyzed. It has been shown that electric transport in bio-SiC is effected by n-type carriers with a high concentration of ～10¹⁹ cm^?3 and a low mobility of ～1 cm² V^?1 s^?1. The relations obtained have been analyzed by invoking the theory of quantum corrections to conductivity.     

Increase in the probability of allowed electron beta decays in a superstrong magnetic field

The effect of a superstrong constant uniform magnetic field, H ? H ₀ = cm _e ² e ³/?³, on the probability of allowed electron beta decays is considered. It is shown that, for an atom whose nucleus is β ^?-active and which is placed in a superstrong magnetic field, the β ^?-decay probability increases owing to the enhancement of β ^? decay to a bound state of the electron. The effect is operative both for the nucleus of a fully ionized atom and for the nucleus of a neutral atom.     

Relaxation phenomena in TlGa<Subscript>0.99</Subscript>Fe<Subscript>0.01</Subscript>Se<Subscript>2</Subscript> single crystals

The relaxation electronic phenomena occurring in TlGa_0.99Fe_0.01Se₂ single crystals in an external dc electric field are investigated. It is established that these phenomena are caused by electric charges accumulated in the single crystals. The charge relaxation at different electric field strengths and temperatures, the hysteresis of the current-voltage characteristic, and the electric charge accumulated in the TlGa_0.99Fe_0.01Se₂ single crystals are consistent with the relay-race mechanism of transfer of a charge generated at deep-lying energy levels in the band gap due to the injection of charge carriers from the electric contact into the crystal. The parameters characterizing the electronic phenomena observed in the TlGa_0.99Fe_0.01Se₂ single crystals are determined to be as follows: the effective mobility of charge carriers transferred by deep-lying centers μ_f=5.6×10^?2 cm²/(V s) at 300 K and the activation energy of charge transfer ΔE=0.54 eV, the contact capacitance of the sample C _c =5×10^?8 F, the localization length of charge carriers in the crystal d _c =1.17×10^?6 cm, the electric charge time constant of the contact τ=15 s, the time a charge carrier takes to travel through the sample t _t =1.8×10^?3 s, and the activation energy of traps responsible for charge relaxation ΔE _σ = ΔE _Q = 0.58 eV.     

The possibility of the “giant” isotope effect for ultrasound absorption in crystals

The Zeeman effect, magnetization M(H), and differential magnetic susceptibility dM/dH of ErVO₄ crystals in a pulsed magnetic field have been experimentally and theoretically studied. In magnetic fields H ∥ [001] and H ∥ [100], the energy levels of Er³⁺ ions exhibit mutual approach and crossing (the crossover effect), which results in the peaks in dM/dH and the jumps in M(H) curves at low temperatures. The anomalies in the magnetic properties related to the crossover in ErVO₄ for H ∥ [001] are highly sensitive to the electronic structure of Er³⁺ ion, which allows this effect to be used for refining the crystal field parameters. The influence of the temperature, field misorientation from the symmetry axis, parameters of pair interactions, and other factors on the magnitude and character of magnetic anomalies in ErVO₄ crystals is considered.     

Behavior of dislocations in silicon in the presence of mechanical and magnetic perturbations

Various types of dislocation stoppers are identified and their basic parameters are determined. Using dislocation loops as an example, the effect of internal stresses on the motion of linear defects in n-and p-Si in the field of external elastic forces is estimated. It is found that preliminary magnetic treatment of silicon plates activates the dislocation transport. In the absence of external mechanical loads, displacement of dislocation half-loops (30–50 μm) in the nonuniform field of internal stresses in a silicon crystal with a scratch (stress concentrator) is detected experimentally during isothermal annealing for 0.5–3 h at a temperature of 600–700°C. Dislocation transport is described taking into account the intrinsic (lattice) potential barrier of the crystal and two types of stoppers on the basis of magnetosensitive point defects (dopant) and “forest” dislocations. A kinetic model is proposed for describing the magnetostimulated variation of the mobility of linear defects associated with the formation of long-lived complexes with a paramagnetic impurity. It is found experimentally that the velocity of dislocations in n-and p-Si increases by a factor of 2 and 3, respectively, upon treatment of the semiconductor in a magnetic field B=1 T for 5–45 min. The “magnetic memory” effect in silicon containing dislocations is detected and kinetic aspects of the effect under natural conditions of sample storage after the removal of the magnetic field are considered. Partial velocities of dislocations and their delay times at various types of stoppers are calculated from the matching of experiment with theory.     

Conduction through localized states in a single crystal of the TlGa<Subscript>0.5</Subscript>Fe<Subscript>0.5</Subscript>Se<Subscript>2</Subscript> alloy

Layered single crystals of the TlGa_0.5Fe_0.5Se₂ alloy in a dc electric field at temperatures ranging from 128 to 178 K are found to possess variable-range-hopping conduction along natural crystal layers through states localized in the vicinity of the Fermi level. The parameters characterizing the electrical conduction in the TlGa_0.5Fe_0.5Se₂ crystals are estimated as follows: the density of states near the Fermi level N_F = 2.8 × 10¹⁷ eV^?1 cm^?3, the spread in energy of these states ΔE = 0.13 eV, the average hopping length R_av = 233 Å, and the concentration of deep-lying traps N _t = 3.6 × 10¹⁶ cm^?3.     

Reversibler Gleichfeld- und Mikrowellen-Durchschlag in n-Typ-Germanium bei 4,2 °K

The microwave induced breakdown characteristic inn-type germanium at 4.2 °K has been observed and compared with the d.c. induced breakdown characteristic obtained from the same sample. The effective microwave breakdown field intensity is nearly equal to the field intensity observed in d.c. induced breakdown. However, in the breakdown region with conductivities greater than 0.1 ohm^?1 cm^?1 a relaxation effect was found and interpreted qualitatively as momentun relaxation. In the initial breakdown the relaxation time τ _m is small,ω ²τ _m ² being ?1 whereω/2π=9·10⁹s^?1 is the microwave frequency. The relaxation time is determined by predominant neutral impurity scattering with at last 5·10¹⁴ impurities per cm³. This scattering mechanism becomes ineffective when the impurities are ionized by hot carriers. Ionized impurity scattering or acoustic phonon scattering will then be predominant with increased and energy dependent values of τ _m . The increased phase shift between carriers and field causes a decreased energy transfer from the field to the carriers, an accordingly smaller ionization rate, and finally results in a nearly constant a.c. conductivity. The observed anisotropy of the breakdown field intensity is in qualitative agreement with the assumption that only carriers in “hot” valleys of the conduction band initiate the breakdown by impact ionization. The unsufficient quantitative agreement may be due to an inhomogeneity of doping which is suggested by comparing the values of the ohmic low temperature conductivity of the samples.     

Charge transport in PbMoO<Subscript>4</Subscript> crystals

Dc and ac electrical conductivity of lead molybdate crystals is studied in the temperature range 300–550 K. The electrical conductivity was shown to have electronic (hole) impurity character. The I–V characteristics are typical of a space charge-limited current. The carrier mobility was estimated to be 10^?5 cm² V^?1 sat T=300 K. The results of the study suggest the hopping mechanism of conduction in PbMoO₄ crystals.     

Features of low-temperature thermal expansion of n-type Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> single crystals in magnetic field

Tensometric study of n-type Bi₂Se₃ single crystals in dc magnetic fields to 6 T in a temperature range of 7–23 K detected a weak negative thermal expansion (NTE) in the basal plane. The NTE increases with the field strength and depends on its orientation with respect to the trigonal c axis. In a magnetic field of 6 T, parallel to the c axis, the linear NTE coefficient reaches ?7 · 10^?7 K^?1, and a minimum sample length is reached at a temperature of 13 K, where a Hall carrier concentration maximum is also detected. The found magnetoelastic anomaly can be associated with the topological insulator state.     

Doping induced spin state transition in Li<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>CoO<Subscript>2</Subscript> as studied by the GGA + DMFT calculations

The magnetic properties of Li _x CoO₂ for x = 0.94, 0.75, 0.66, and 0.51 are investigated within the method combining the generalized gradient approximation with dynamical mean field theory (GGA + DMFT). A delicate interplay between Hund’s exchange energy and t _2g ?e _g crystal field splitting is found to be responsible for the high-spin to low-spin state transition for Co⁴⁺ ions. The GGA + DMFT calculations show that the Co⁴⁺ ions at a small doping level adopt the high-spin state, while delithiation leads to an increase in the crystal field splitting and low-spin state becomes preferable. The Co³⁺ ions are found to stay in the low-spin configuration for any x values.     

Effect of weak magnetic fields on the dynamics of variation in the microhardness of silicon under low-intensity beta irradiation

Weak magnetic fields with an induction B = 0.28 T are found to have an effect on the transformation of subsystems of structural (intrinsic and radiation-induced) silicon defects under irradiation with a low-intensity flux of beta particles (I = 10⁵ cm^?2 s^?1). The effect of a weak magnetic field leads to an increase in fluences at which the disordering exhibits maxima.     

Dynamics of surface dislocation ensembles in silicon under conditions of mechanical and magnetic perturbations

This paper reports on the results of investigations into the dynamics of surface dislocation ensembles in silicon under conditions of mechanical and magnetic perturbations. The motion of defects is described with due regard for barriers of three types, including magnetically sensitive point defects and dislocations. Within the concept of spin-dependent reactions between structural defects, a kinetic model is proposed for the magnetic-field-stimulated changes observed in the dislocation mobility due to the formation of long-lived complexes involving paramagnetic impurities. It is experimentally proved that the preliminary treatment of dislocation-containing crystals in a magnetic field (B=1 T) for 5–45 min leads to an increase in the velocity of dislocations in n-Si and p-Si samples by factors of two and three, respectively. The magnetic memory effect is observed in dislocation-containing silicon crystals. Consideration is given to the decay kinetics of the magnetic memory during storage of the silicon samples under natural conditions after magnetic treatment. The basic quantitative characteristics of the motion of linear defects in a magnetic field (for example, the partial velocities of dislocations, the dynamics of dislocation segments at stoppers of different types, and the expectation times for the appearance of the appropriate stoppers) are determined by fitting the experimental data to the theoretical results.     

Magnetostriction of Hexagonal HoMnO<Subscript>3</Subscript> and YMnO<Subscript>3</Subscript> Single Crystals

We report on the magnetostriction of hexagonal HoMnO₃ and YMnO₃ single crystals in a wide range of applied magnetic fields (up to H = 14 T) at all possible combinations of the mutual orientations of magnetic field H and magnetostriction ΔL/L. The measured ΔL/L(H, T) data agree well with the magnetic phase diagram of the HoMnO₃ single crystal reported previously by other authors. It is shown that the nonmonotonic behavior of magnetostriction of the HoMnO₃ crystal is caused by the Ho³⁺ ion; the magnetic moment of the Mn³⁺ ion parallel to the hexagonal crystal axis. The anomalies established from the magnetostriction measurements of HoMnO₃ are consistent with the phase diagram of these compounds. For the isostructural YMnO₃ single crystal with a nonmagnetic rare-earth ion, the ΔL/L(H, T) dependences are described well by a conventional quadratic law in a wide temperature range (4–100 K). In addition, the magnetostriction effect is qualitatively estimated with regard to the effect of the crystal electric field on the holmium ion.     

PhotoleitfÄhigkeit von CaWO4-Einkristallen

Photoconductivity has been detected in CaWO₄-single crystals. By means of a pulse method the mobility of the charge carriers could be determined. The very small mobilities (Μ ⁺=0.1 cm²/Vs,Μ ^?≈ 5 cm²/Vs) are explained in the picture of “small polarons”.     

Anomalous magnetocaloric effect in van vleck paramagnet HoVO<Subscript>4</Subscript> near energy level crossing

The anomalous magnetocaloric effect in singlet rare-earth paramagnets near energy level crossing has been experimentally observed for the first time. The magnetization and differential magnetic susceptibility of Ho_{1 ? x} Y _x VO₄ crystals (x = 0, 0.5) measured along the tetragonal axis in a pulsed magnetic field with various change rates near the crossover field, dH/dt, from 3 × 10³ to 2.5 × 10² T/s are compared to the data in static magnetic fields down to 0.1 K. These data indicate the large negative magnetocaloric effect in the pulsed magnetic field, so that the crystal with the initial temperature T ₀ = 4.2 K is cooled much lower than 1 K. The experimental data are qualitatively described in the crystal field model with various interactions including hyperfine interactions and with the known interaction parameters.     

New mechanism of impurity conduction in lightly doped crystalline noncompensated silicon

It is found that the plastic deformation of lightly doped crystalline silicon samples (N<6×10¹⁶ cm^?3) with a low compensation (K～3×10^?2) gives rise to nonohmic conduction σ_M in electric fields that differs radically from conventional hopping conduction via the ground states of impurities (σ₃). The values of σ_M can exceed values of σ₃ by a factor of 10³?10⁵. The value of σ_M and its dependence on the electric (E) and magnetic (H) fields can be controlled by varying the density of dislocations and the mode of thermal sample treatment. A strong anisotropy of σ_M is observed in samples with oriented dislocations: the conductivities along and across dislocations can differ by a factor of 10⁴. The results are explained by the occurrence of conduction via the H^?-like states of impurities concentrated in the vicinity of dislocations. The levels of these states lie between the upper and the lower impurity Hubbard bands.