光学超晶格:从体块到薄膜

光学超晶格是一种基于准相位匹配技术的非线性光学材料。通过铁电畴工程研制出不同微结构的光学超晶格,可以实现高效灵活的非线性频率转换,并对光场进行多维调控。光学超晶格的基质材料,经历了从体块到薄膜的发展,伴随着两种材料体系超晶格制备技术的突破,催生了激光变频技术、非线性光场调控和多功能集成光量子芯片等重要应用。     

第一性原理研究Cd掺杂对ZnO电子结构与光学性质的影响

采用第一性原理平面波超软赝势方法超软赝势方法,研究了Cd掺杂前后ZnO的电子结构以及光学性质.计算结果发现:Cd的掺入使得ZnO的电子结构发生了改变,晶胞变大,禁带宽度变窄.Cd掺杂使ZnO的光学性质也发生了变化,4.3 eV处的介电峰增强并发生红移,12.9 eV处的介电峰减弱,对紫外光吸收作用增强.     

光学超晶格晶体——实现激光频率转换的无限可能

正1962年,诺贝尔奖获得者Bloembergen等提出了准相位匹配(quasi phase matching,QPM)理论,通过对光学晶体的二阶非线性极化率的周期性调制来补偿光频率变换过程中因色散引起的基波和谐波之间的相位失配,从而获得非线性光学效应的有效增强。20世纪70年代末,南京大学闵乃本等用晶体生长条纹技术生长出具有周期畴的铌酸锂晶体(后被称为光学超晶格),完成了首次准相位匹配的实验验证。20世纪80年代末,他们又提出了多重准相位匹配理论,将准周期(人工准晶)引入光学超晶格。     

利用化学键方法寻找新型光学晶体

利用化学键的观点定量地研究了一些具有各种晶体结构实用材料的介电性质。采用已建立的化学键方法，分析了这些晶体的介电性质与其组成化学键之间的关系。更进一步，基于晶体的化学键方法提出了一个组合方法用于定量确定具有相似晶体结构材料的介电性质。从目前的工作中可以推导出光学晶体非线性起源的结构信息，因此可以在一定程度上帮助人们开展非线性光学晶体工程的研究工作。     

4-氨基二苯甲酮晶体的定向生长及光学性能研究

采用过冷熔体定向约束生长法生长了尺寸约为30 mm×14 mm×7 mm的块状4-氨基二苯甲酮晶体,并对生长晶体的光学均匀性、光学透过率、二次谐波转换效率以及激光损伤阈值等性能进行了测试.结果表明:定向生长的4-氨基二苯甲酮晶体在650~1200 nm波段内具有90;以上的光学透过率;最高二次谐波转换效率达到64.9;;单点激光脉冲损伤阈值分别为205.4 GW/cm2(输入光波为1064 nm)和267.2 GW/cm2(输入光波为532 nm).采用过冷熔体定向约束生长的4-氨基二苯甲酮晶体适合于用作Nd: YAG激光的二次倍频器件,也适合于用作650~1200 nm波段的光学调制器件.     

硅基Ⅳ族SiGeSn三元合金晶格结构、电子结构和光学性质的第一性原理

SiGeSn三元合金由于具有较二元合金更大的晶格和能带性质调控范围,是当前用于制作硅基激光器的热点材料。为全面且精确地研究其晶格结构、电子结构和光学性质,本文采用基于密度泛函理论(DFT)的第一性原理方法,并结合准随机近似和杂化泛函带隙修正,首先研究SiGeSn晶格常数及其弯曲系数的变化规律,并给出了解决GeSn二元晶格失配和压应变问题的方案。其次比较研究了SiGeSn与GeSn合金的能带结构,并通过态密度计算分析了Si的引入对合金带隙变化的物理机制。最后比较研究了SiGeSn与GeSn合金的介电函数谱、吸收系数、消光系数、反射率、折射率和发射率等光学性质。结果表明,SiGeSn晶格常数弯曲系数的变化与合金电负性差值的变化规律一致,Si-p电子态是SiGeSn合金带隙变化的最主要贡献。相比于同Sn浓度的GeSn合金,SiGeSn能保持直接带隙特征,且其带隙值和光吸收波长呈现更宽的变化范围。因此在拓宽硅基高效光源和光电探测器应用波段方面,SiGeSn相较于GeSn合金具有更大的应用潜力和优势。     

Mg掺杂浓度对GaN电子结构和光学性质的影响

基于密度泛函理论的第一性原理,分析了Mg掺杂浓度对GaN晶格参数、能带结构、电子态密度和光学性质的影响.研究表明:Mg掺杂GaN体系,晶格常数增大,禁带宽度增加,而且禁带宽度随着Mg含量的增加而增加,同时N2p和Mg2p态电子轨道的相互杂化,从而在费米能级附近引入受主能级,随着Mg含量的增加,费米能级进入价带的位置加深,同时Mg掺杂浓度越高,价带和导带带宽越窄.掺Mg后在介电函数和光学吸收谱的低能区和高能区均出现了新的介电峰,这些峰的出现和禁带中的杂质能级到导带底的跃迁有关,由于带隙的增加使介电峰向高能量方向发生偏移.     

稀土元素(Ce/Nd/Eu/Gd)与N共掺金红石相TiO2的第一性原理研究

基于密度泛函理论的第一性原理平面波超软赝势计算方法,计算分析了纯金红石相TiO2,Ce、Nd、Eu和Gd四种稀土元素单掺杂金红石相TiO2,以及与N共掺金红石相TiO2的晶体结构、电子结构和光学性质.由掺杂前后的结果分析发现,掺杂后晶胞膨胀,晶格发生畸变;费米能级上移进入导带,导带底部引入杂质能级,提高了掺杂体系的电导率和对可见光的响应;光学性质、介电函数和吸收谱掺杂体系峰值比纯TiO2小,反射谱和能量损耗谱出现红移现象.     

晶格动力学性质对钛酸锶介电行为的影响

在105 K钛酸锶(SrTiO3)发生立方-四方的反铁畸变,对量子效应的吉布斯自由能取极小值,可得到一系列方程,原则上可以确定任意系统相变时的介电性质.研究了晶格动力学性质,特别是软模的行为,对理解介电性非常重要.介电常数完全由低频的光学声子模决定,从晶格动力学的性质出发,分析了低温时的居里-外斯定律行为.     

基于锑化物二类超晶格的多色红外探测器研究进展

近年来InAs/GaSb二类超晶格红外探测器在材料晶体结构生长、器件结构设计与成像应用方面取得了飞速发展。尤其在多色红外探测方面,二类超晶格材料以其具备的带隙可调、暗电流小、量子效率高、材料均匀性高,以及成本低等优越性能,使其逐步成为第三代红外焦平面探测器的优选材料。本文阐述了锑化物窄带隙半导体研究中心的锑化物多色红外探测器研究进展。本团队成功实现了低噪声、高量子效率以及低光学串扰的短/中、短/长、中/长、长/长、中/长/甚长波等多种高性能多色红外探测器研制。     

Growth and characterization of L‐alanine doped KDP crystals

Potassium Dihydrogen Phosphate (KDP) is an excellent inorganic nonlinear optical (NLO) material with different device applications. Most of amino acids possess NLO property; therefore, it is of interest to dope them in KDP crystals. In the present study, amino acid L‐alanine doped KDP crystals were grown by slow aqueous solvent evaporation technique. The doping of L‐alanine was confirmed by the paper chromatography, the CHN analysis and the FT‐IR spectroscopy. The powder XRD was carried out to assess the single phase nature of the samples. The effect of doping on thermal stability of the crystals was studied by TGA and the kinetic and thermodynamic parameters of dehydration were evaluated. As the amount of doping increased the thermal stability of crystals decreased. However, the second harmonic generation (SHG) efficiency and the UV‐Vis spectroscopy studies indicated that as the L‐alanine doping increased the SHG efficiency and optical transmission percentage increased. The dielectric behavior of the samples has been studied. The variation of dielectric constant, dielectric loss (tanδ), a.c.resistivity and a.c.conductivity with frequency of applied field in the range from 100 Hz to 100 kHz was studied. The dielectric constant and dielectric loss decreased with increase the value of frequency of applied field. The dielectric constant and the dielectric loss values of L‐alanine doped KDP crystals were lower than the pure KDP crystals. The results are discussed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

介电超晶格结构极化设备的研究

针对介电超晶格结构的特殊极化问题,自行研制了极化设备.研究了Windows操作系统下实现高频精确定时的高性能定时器法.基于此方法实现了极化设备的任意波形发生器及信号采集功能.研制开发了高精度0～10 kV稳压电源,产生满足要求的极化电压.利用这种设备完成了化学计量比钽酸锂晶体的极化实验.结果表明设备运行稳定可靠,性能良好.     

h-BN型超晶格等离子体光子晶体能带特性研究

六方氮化硼(h-BN)晶格结构是一种类六方对称复式超晶格结构。具有h-BN晶格构型的光子晶体以其宽光子带隙特点受到国内外学者的广泛关注。本文利用不同尺度低压气体放电管与Al₂O₃介质棒周期性排列，构建了新型h-BN型超晶格等离子体光子晶体，实现其空间结构和等离子体参数的动态调控。利用微波透射谱对比研究了h-BN型超晶格与简单三角晶格等离子体光子晶体禁带位置、宽度和数目。分析了放电电流、介质棒阵列数对不同频段光子带隙的影响，以及电磁波入射角度对电磁传输特性的影响。结果表明：等离子体的引入不仅能够形成新的光子带隙，而且可以选择性地使部分禁带位置发生移动；相对于简单三角晶格，h-BN型超晶格等离子体光子晶体呈现出更多光子带隙；Al₂O₃介质棒阵列数对等离子体光子晶体禁带位置、宽度和数目均具有重要影响。电磁波入射角度变化越大，电磁传输特性差别越显著，透射谱相关性越差。本文所设计的新型h-BN型超晶格等离子体光子晶体为制作可调谐光子晶体提供了新的思路，在微波和太赫兹波控制领域具有潜在应用价值。     

Na3La2(BO3)3的晶体结构

以Na2CO3-H3BO3-NaF为助熔剂,使用顶部籽晶法生长出Na3La2(BO3)3透明单晶.测定了Na3La2(BO3)3的晶体结构,该晶体属正交晶系,空间群:mm2(No.38),晶胞参数为a＝0.51580(10)nm,b=1.1350(2)nm,c=0.73230(15)nm,α＝β＝γ＝90°,V＝0.42871(15)nm3,密度:.053g/cm3.晶体结构中的硼氧基团是平面的BO3基团,BO3基团相互独立,且与Na(1)O6、Na(2)O8、Na(3)O6和La(1)O9配位多面体连结形成三维网络骨架结构.讨论了Na3La2(BO3)3的晶体结构与倍频效应的关系.     

Growth and characterization of Imidazolium adipate (IA) single crystal

Bulk single crystals of Imidazolium adipate (IA) were grown by solution growth method at 35 °C temperature. The solubility measurement of the material was carried out. FT-IR spectral analysis confirms the functional groups of the IA compound. Linear and nonlinear optical properties of the crystal were analyzed by UV-Vis-NIR transmittance and SHG studies. The high transparency with wide band gap is useful for optoelectronic applications are indicated. The SHG efficiency was higher than KDP. Vickers hardness study confirmed that the crystal was soft nature. Thermal stability of the material is up to 80 °C and the electrical study was carried out.     

Synthesis,growth and characterization of l‐alaninium oxalate ‐ a novel organic NLO crystal

Nonlinear optical material of L‐alaninium oxalate (LAO) has been synthesized and single crystals are grown by slow evaporation technique. The solubility data of LAO is determined in water. Single crystal X‐ray diffraction study showed that LAO belongs to orthorhombic system with a non‐centrosymmetric space‐group P2₁2₁2₁. The functional groups have been identified from FT‐IR spectrum. The UV‐Vis‐NIR spectrum of LAO shows less optical absorption in the entire visible region. The second harmonic generation (SHG) in the material was estimated using Nd:YAG laser. The mechanical properties of the grown crystals are studied using Vickers microhardness tester. The AC and DC conductivity, and dielectric studies are also carried out and reported for the first time. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of 2-amino-5-chlorobenzophenone (2A-5CB) single crystals

Organic nonlinear optical single crystals of 2-amino-5-chlorobenzophenone (2A-5CB) were grown in ethanol by slow solvent evaporation technique. The grown crystals were characterized by single-crystal XRD, FTIR, FT-Raman and UV–vis–NIR techniques. The UV–vis–NIR spectrum ascertains the cut-off wavelength of the sample as 390 nm. The powder second harmonic generation (SHG) technique reveals that 2A-5CB crystal has its SHG efficiency nearly three times that of KDP. The dielectric response of the sample was studied in the frequency region of 50 Hz–1 MHz at varying temperatures. The photoconductivity studies indicate that the 2A-5CB crystal exhibits negative photoconductivity. TGA–DTA studies confirm the melting point of the sample as 101.5 °C.     

Growth,spectral and thermal properties of KAP single crystals in the presence of DL‐Alanine and L‐Methionine amino acid dopants

Single crystals of potassium acid phthalate (KAP) and amino acid (DL‐Alanine, L‐Methionine) doped KAP were grown from aqueous solutions by slow cooling method. The grown crystals were characterized using powder X Ray diffraction (XRD) and Fourier Transform Infrared (FTIR) analysis. The thermal stability of KAP in the presence of dopants was analysed using Thermogravimetric and Differential Scanning caloriemetric (TGA/ DSC) studies and the maximum temperature for non linear optical application of this compound in the presence of dopants was found out. The transmittance of KAP was found to increase in the presence of dopants. Etch pits were observed for all the crystals using different etchants. Vickers microhardness tests were performed to study the mechanical stability of the crystals. The hardness of DL‐alanine doped KAP is more than that of L‐alanine doped KAP crystal. The dielectric constant and loss were determined as a function of temperature. Frequency response of the dielectric constant and dielectric loss factor have been studied over the frequency range of 50Hz – 5MHz. Second harmonic generation (SHG) was confirmed in all the crystals using the Kurtz and Perry powder technique. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and high frequency dielectric study of pure and thiourea doped KDP crystals

Non linear optical (NLO) materials have acquired new significance with the advent of a large number of devices utilizing solid‐state laser sources. Several NLO materials have been used for this kind of technological applications. The Potassium di‐hydrogen phosphate (KDP) one of NLO material having superior non linear optical properties has been exploited for variety of applications. In the present investigation we have grown KDP crystals from aqous solution with thiourea, an organic non linear optical material. We could enhance the SHG efficiency of thiourea doped KDP crystal. It was 1.99 times more that of pure KDP. We observed more enhancements in nonlinearity for low concentration of thiourea.The crystal structure and cell parameters of grown crystal were determined from Powder XRD.The incorporation of thiourea in the grown crystals was qualitatively analyzed from FT‐IR study. The absorption spectra of pure and thiourea doped KDP crystal reveal that thiourea doped KDP crystals would be a better nonlinear optical (NLO) material for second harmonic generation (SHG) than pure KDP. The thermal decomposition and weight loss of pure and thiourea doped KDP crystal was observed by thermogravimetric (TGA) analysis and Differential Scanning Calorimetry (DSC). The high frequency dielectric study of pure KDP crystal, thiourea doped KDP crystals and organic additive thiourea was carried out using X‐band at frequency 8GHZ and 12GHZ by transmission line wave guide method. We observed low dielectric constant of thiourea doped KDP crystal when it is doped with 2mole% of thiourea. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Second harmonic generation of thermally poled ZnCl2 or ZnBr2-B2O3-TeO2 glasses and its mechanism

Second harmonic generation (SHG) was observed from halide, in specific, chlorine or bromine-containing tellurite glasses. The magnitude of SHG increased with increasing halides concentration and poling time. Although the mechanism of SHG is still controversial, it is generally accepted that the idea of the deficiency of cations near the anode side cause SHG. However, in the preset oxyhalide glass system without any singly positive charge cation, the polishing of the anode side showed no effect on SHG. On the other hand, the polishing of the cathode side significantly decreased the magnitude of SHG in the present alkali-free oxyhalide glasses. Therefore, the SHG mechanism in the present oxyhalide glass systems is made evident in which the movement of anions results in an anion-deficient layer near the cathode side.