Equilibrium charge state distributions of beam foil excited molecular fragments exiting carbon foils

Summary Equilibrium charge state distributions of ions emerging from solids have been measured. As incident particles were used both atomic (C⁺, N⁺, O⁺) and molecular (N ₂ ⁺ , CO⁺) projectile ions (0.025<E/M<0.108 MeV/u). The data of atomic projectile ions agree well with the data of other authors in a range in which they overlap. Charge state fractions of emerging molecular-fragment ions behind a carbon foil are strongly influenced by the Coulomb explosion and possibly by the wake potential. Supported by BMFT/Bonn.     

A study of charge,energy and angular momentum transfer in the 56Fe + 197Au and 56Fe + 107, 109Ag reactions at 7.2 and 8.3 MeV/nucleon

Kinetic energy spectra, charge and angular distributions have been measured for thirty elements produced in the reactions of 401 and 460 MeV ⁵⁶Fe + ¹⁹⁷Au and in the reaction of 470 MeV ⁵⁶Fe + ^{107, 109}Ag. In addition, γ-ray multiplicities were measured at the 470 MeV bombarding energy for both targets at a limited number of angles. The charge distributions for the deep-inelastic component of these systems increase monotonically with atomic number in the measured angular range, whereas, those for the quasielastic component are skewed toward Z-values below the projectile. The angular distributions for the Fe-induced reactions show a smooth evolution from a side-peaked to forward-peaked distributions with increasing mass transfer. This side peak is more intense and more persistent for mass transfers from the projectile to the target. In the quasielastic region the γ-ray multiplicity is observed to increase almost linearly with decreasing Q-value whereas for large negative β-values it is essentially constant and independent of the exit channel mass asymmetry. Finally, angular distributions, angle-integrated charge distributions and γ-ray multiplicities have been compared with a diffusion model in which the dynamics of shape evolution, N/Z equilibration, angular momentum and energy exchange occur via one-body forces.     

Swift heavy ion beam mixing at V/Si interface

Vanadium silicides are of increasing interest because of applications in high temperature superconductivity and in microelectronics as contact materials due to their good electrical conductivity. In the present work ion beam induced mixing at Si/V/Si interface has been investigated using 120 MeV Au ions at 1 × 10¹³ to 1 × 10¹⁴ ions/cm² fluence at room temperature. V/Si interface was characterized by Grazing Incidence X-Ray Diffraction (GIXRD), Atomic Force Microscopy (AFM), Rutherford Backscattering Spectrometry (RBS) and Cross-sectional Transmission Electron Microscopy (XTEM) techniques before and after irradiation. It was found that the atomic mixing width increases with ion fluence. GIXRD and RBS investigations confirm the formation of V₆Si₅ silicide phase at the interface at the highest ion irradiation dose.     

Z2 oscillation of mean charge states of fast Si and Cl ions after passage through thin foils

Z₂ (target atomic number) oscillation of equilibrium charge states has been observed for 30–110 MeV Si and 70 and 110 MeV Cl ions after the passage through 22 different Z₂ foils. This oscillation may be related to the Z₂ oscillation of electron capture cross sections into the projectile K vacancy.     

Materials modification at zirconium–silicon interface using swift heavy ions

The reactivity of the Zr/Si interface induced by swift heavy ion beams of Au has been investigated in the present work. Zirconium was evaporated on a clean silicon substrate in ultra high vacuum (UHV) at a pressure of 10^?8 Torr by the electron beam evaporation technique and the final layer was a thin film of Au to avoid oxidation of zirconium. The Zr/Si system was irradiated by 350 MeV Au²⁶⁺ ions at liquid nitrogen temperature at different fluences (0.46×10¹⁴, 1.85×10¹⁴ and 4.62×10¹⁴ ions/cm²). Rutherford back scattering (RBS) spectroscopy using 2 MeV He ions was used to monitor the Zr and Si concentration profiles and interdiffusion at the interfaces. The irradiation at the Zr/Si interface showed mixing. X-ray diffraction measurements confirmed the formation of the ZrSi₂ phase. Thermal spike formation and melting in the tracks was found to be the dominant process at the interfaces.     

Elastic neutron transfer in the scattering of Si isotopes

Angular distributions of the elastic scattering of ²⁸Si on ²⁹Si and ³⁰Si have been measured for incident beam energies at E = 65 and 70 MeV with a time-of-flight spectrometer for heavy ions. At 70 MeV the neutron transfer ³⁰Si(²⁸Si, ²⁹Si)²⁹Si was observed in addition to the elastic channel. The pronounced oscillations in the elastic scattering distributions are interpreted as being due to an elastic transfer of neutrons between the colliding nuclei during the scattering process. This assumption is in accordance with some general features of the data and allows for the extraction of spectroscopic factors of the transferred neutrons.     

Nanostructuring and hardening of LiF crystals irradiated with 3–15 MeV Au ions

Modifications of the structure and mechanical properties in LiF crystals irradiated with MeV-energy Au ions have been studied using nanoindentation, atomic force microscopy and optical spectroscopy. The nanostructuring of crystals under a high-fluence irradiation (above 10¹³ ions/cm²) was observed. Nanoindentation tests show a strong ion-induced increase of hardness (up to 150–200%), which is related to the high volume concentration of complex color centers, defect aggregates, dislocation loops and grain boundaries acting as strong barriers for dislocations. From the depth profiling of the hardness and energy loss it follows that both nuclear and electronic stopping mechanisms of MeV Au ions contribute to the creation of damage and hardening. Whereas the electronic stopping is dominating in the near-surface region, the effect of elastic displacements prevails in deeper layers close to the projectile range.     

Depth resolved structural study of heavy ion induced phase formation in Si/Fe/Si trilayer

Intermixing in Si/Fe/Si trilayer induced by 120 MeV Au ions has been studied. X-ray fluorescence provides information about the depth distribution of Fe atoms, while Mössbauer spectroscopy and XAFS provide information about the changes in the local structure. In the as-deposited film Fe layer is amorphous in nature with a significant Si content in it. Irradiation to a fluence of 1 ×10¹³ ions/cm² results in formation of non-magnetic intermixed layer with its hyperfine parameter close to those of Fe_0.5Si with CsCl structure. XAFS measurements under X-ray standing wave condition provide depth resolved structural information.     

XRD and AFM study of radiation damage induced by swift heavy ions in Y3Al5O12 single crystals

Defects induced in Y₃Al₅O₁₂ single crystals by swift heavy ions are investigated by X-ray diffraction (XRD) and atomic force microscopy. The irradiation was performed at GANIL with 561 MeV ⁵¹Cr, 466 MeV ¹²⁸Te, and 957 MeV ²⁰⁸Pb ions. The XRD data reveal that the lattice strain increases with increasing electronic stopping power, whereas the hillock parameters (height and diameter) are not influenced by the electronic stopping power. According to our experimental data, for the same mean electronic stopping power, the hillock parameters are more pronounced for the lower range in contrast to swelling measurements. The experimental data show a strong increase in the hillock parameter at higher fluence, indicating the amorphization of Y₃Al₅O₁₂ single crystals.     

Resonant coherent excitation of 94 MeV/u Ar17+ ions in the $$(2\bar 20)$$ planar channel of a silicon crystal

The charge exchange and characteristic x-radiation of channeled ions under resonant coherent excitation are simultaneously described in terms of the density matrix formalism. The survival fraction of 94 MeV/u Ar¹⁷⁺ ions in the \((2\bar 20)\) planar channel of a silicon crystal is calculated, and the angular distribution of x-ray emission of these ions is analyzed.     

The energy dependence of fusion in the 9Be+28Si system

The angular distributions of the energy spectra of the light charged particles (p, d and α) from the ⁹Be + ²⁸Si reaction have been measured in the energy range 12 ≦ E_lab ≦ 30 MeV. The particle evaporation spectra and the angular distributions were analyzed with a spin dependent statistical model. Angular distributions of ⁹Be ions elastically scattered on ²⁸Si have been measured at the energies 12 MeV, 17 MeV, 23 MeV and 30 MeV and were analysed, together with previously measured cross sections, with the optical model. The fusion cut-off angular momentum l_fus(E), the fusion cross section σ_fus(E) and the ratio σ_fus/σ_R^OM(E) were deduced. The excitation function for fusion was analyzed with the Glas and Mosel model. The parameters obtained from the fusion excitation function were compared with the corresponding ones from the ⁹Be + ²⁸Si optical-model interaction potential.     

Large contribution of deep inelastic processes to reactions of40Ar and48Ca with238U

Differential recoil range distributions have been measured for heavy-reaction products ranging from Te(Z=52) to quasielastic transfer products near the charge and mass of the targets for the reactions of 276 MeV⁴⁸Ca+²³⁸U, 237MeV and 250 MeV⁴⁰Ar+²³⁸U, and 259 MeV⁴⁰Ar+¹⁹⁷Au. The measured recoil range distributions for the⁴⁰Ar+¹⁹⁷Au reaction agree with range distributions calculated from the known projectile-like fragment angular distributions for this reaction. The angular distributions of recoil products formed in the uranium target reactions are deduced and show that the products in the₇₅Re to₈₃Bi region have backward peaked angular distributions characteristic of deep inelastic reactions. The heavy product angular distributions smoothly vary from a (1/sinθ) shape to an exponential shaped backward peak as the atomic number of the product increases from 52 to 83. The trend in the deduced angular distributions for those elements for which recoil range distributions were determined in the⁴⁰Ar+¹⁹⁷Au reaction and the 250 MeV⁴⁰Ar+²³⁸U reaction is similar, suggesting that just as for the Ar+Au system the composite system for the uranium target reaction is also not fully equilibrated along the mass asymmetry coordinate. These conclusions show that the fraction of the total reaction cross section resulting in complete fusion must be re-evaluated for the⁴⁰Ar+²³⁸U reaction and similar heavy-target reactions.     

Calculations of implanted-ion range and energy-deposition distributions:11B in Si

The integro-differential equations for moments of range and energy-deposition distributions of heavy ions implanted into amorphous targets are solved by an improved method, allowing accuracy to be retained to higher energies. Correlation of electronic stopping with scattering is found to have negligible effects on the calculated distributions for those scattering cross sections for which uncorrelated-stopping calculations are meaningful; however inclusion of correlation allows a wider range of scattering potentials to be used in the calculations. Effects of varying this potential are explored and it is indicated that a careful study of the collision cascade could provide information about the potential.

Computation has been done for ¹¹B implanted into Si at energies from 1 keV to 10 MeV. Some comparison of the range calculations with experiment has been made.     

Effect of ion velocity on SHI-induced mixing in Ti/Bi system

Energetic ion beams are proving to be versatile tools for modification and depth profiling of materials. The energy and ion species are the deciding factor in the ion-beam-induced materials modification. Among the various parameters such as electronic energy loss, fluence and heat of mixing, velocity of the ions used for irradiation plays an important role in mixing at the interface. The present study is carried out to find the effect of the velocity of swift heavy ions on interface mixing of a Ti/Bi bilayer system. Ti/Bi/C was deposited on Si substrate at room temperature by an electron gun in a high-vacuum deposition system. Carbon layer is deposited on top to avoid oxidation of the samples. Eighty mega electron volts Au ions and 100?MeV Ag ions with same value of S_e for Ti are used for the irradiation of samples at the fluences 1?×?10¹³–1?×?10¹⁴ ions/cm². Different techniques like Rutherford backscattering spectroscopy, atomic force microscopy and grazing incidence X-ray diffraction were used to characterize the pristine and irradiated samples. The mixing effect is explained in the framework of the thermal spike model. It has been found that the mixing rate is higher for low-velocity Au ions in comparison to high-velocity Ag ions. The result could be explained as due to less energy deposition in thermal spike by high-velocity ions.     

Mössbauer study of ferromagnetic metallic glasses irradiated by swift heavy ions at temperatures 100 and 300 K

The effect of swift heavy ion irradiation on ferromagnetic metallic glasses Fe₄₀Ni₃₈Mo₄B₁₈ and Fe₇₈Si₉B₁₃ has been studied. The ion beams used are 100 MeV ¹²⁷I and 180 MeV ¹⁹⁷Au. The specimens were irradiated at fluences ranging from 3 × 10¹² to 1.5 × 10¹⁴ ions/cm². The irradiations have been carried out at temperatures 100 and 300 K. The magnetic moments are sensitive towards the irradiation conditions such as irradiation temperature and stopping power of incident ion beam. The irradiation-induced effects have been monitored, by using Mössbauer spectroscopy. The modifications in magnetic anisotropy and hyperfine magnetic field distributions, as an effect of different irradiation temperature as well as different stopping power have been discussed. After irradiation, all the samples remain amorphous and magnetic anisotropy considerably changes from its original in-plane direction. The results show enhancement in magnetic anisotropy in the specimen irradiated at 100 K, as compared to that of irradiated at 300 K. It is expected that at low temperature, the stresses produced in the material would remain un-annealed, compared to the samples irradiated at room temperature and therefore, the modification in magnetic anisotropy would be enhanced. A distribution of hyperfine magnetic field, of the samples irradiated at low temperature, show a small but distinct peak at ～?11 Tesla, indicating Fe-B pairing.     

Observation of an enhanced gettering effect in silicon under germanium molecular ion implantation

Germanium atomic (Ge₁ ⁺) and molecular ions (Ge₂ ⁺) of equal energy per atom are implanted in silicon at an elevated temperature. The ion induced damage has been monitored by following the intensity variation of the LO Raman peak of Si. The germanium implanted samples have been labeled with 10 keV Au ions. The gettering of gold has been observed by Rutherford backscattering spectrometry in the post-annealed samples. This paper reports a first time observation of an enhanced gettering of gold in silicon implanted with molecular ions. PACS 61.72.Ji; 61.80.Lj; 61.80.Jh; 61.72.Yx     

Z1 and Z2 variations in the stopping powers of Z1=10 to 18 ions deduced from Dsam lifetime measurements

From lifetime measurements of the ²²Ne(3.26 MeV), ¹³P(2.23 MeV) levels and published data, deviations from theory of the stopping powers for Ne and other ions in many materials have been deduced; they correlate strongly with electron densities deduced from positron lifetimes. The data also indicate that Z₁ deviations for s-d shell nuclei are Z₂ dependent.     

Primary mass and charge distributions in the reaction of 900 MeV 132Xe ions with 197Au

A stacked foil technique and radioehemical yield measurements were combined in order to study the reaction of ¹³²Xe ions with ¹⁹⁷Au at 1.3 times the interaction barrier energy. Evidence is presented for a preferential exchange of neutrons for energy losses of up to 100 MeV. The same amount of energy damping is required for the development of a drift in the position of the centroid of the element distribution and for the evolution of full correlations in the exchange of neutrons and protons. The widths of the charge distributions at fixed mass asymmetry rise slowly as the degree of energy damping increases. This is reminiscent of classical statistical fluctuations, although the widths at large excitation energies have also been reproduced quantum-mechanically in terms of the zero-point motion of a collective isovector mode analogous to the giant dipole resonance in spherical nuclei. All results concerning the initial evolution of charge and mass distributions seem to be dominated by a hindrance of proton exchanges for large internuclear distances.     

Production of recoil ions He^i＋ accompanied by single electron loss of 0.2-7 MeV C^q＋ and 0.25-5 MeV O^q＋ （q = 1- 4） ions

Target ionization accompanied with projectile electron loss is investigated for 0.2-7 MeV C^q＋ （q = 1 - 4） with He and 0.25-5 MeV O^q＋ （q = 1 - 4） with He collisions. For projectile single-electron loss channel, the He double-to-single ionization ratio R is nearly independent of projectile charge state but dependent on the nuclear charge of projectile Zp. The results are analysed with atomic structure qualitatively. So far there have not existed the experimental data comparable with our results, to our knowledge. The ratio R is interpreted in terms of the two-step mechanism. This analysis agrees well with similar experiments in the literature.     

Nanoscale ion-beam mixing in Au–Si and Ag–Si eutectic systems

MeV ion induced mixing in the nanoscale regime for Au and Ag nanoislands on silicon substrates has been studied. Au and Ag nanoislands are grown on silicon substrates at room temperature and irradiated with 1.5-MeV Au²⁺ ions at various fluences. Cross-sectional high-resolution transmission electron microscopy and Rutherford backscattering spectrometry (RBS) are used to study the ion-beam mixing in Au/SiO_x/Si and Ag/SiO_x/Si systems. We observe a metastable mixed phase for the Au–Si system at a fluence of 1×10¹⁴ ionscm^-2, while no mixed phase is formed for the Ag–Si system. For both Au–Si and Ag–Si systems, a part of the islands is pushed into the substrate. The mixed phase of the Au–Si system is found to be crystalline in nature. The higher eutectic temperature and lower heat of mixing of the Ag–Si system compared to the Au–Si system could be responsible for the lack of mixing and silicide formation in the Ag–Si system. PACS 61.80.Jh; 61.82.Rx; 68.37.Lp; 64.75.+g; 61.46.+w