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1.
Fe50Co50 thin films with thickness of 30 and 4 nm have been produced by rf sputtering on glass substrates, and their surface has been observed with atomic force microscopy (AFM) and magnetic force microscopy (MFM); MFM images reveal a non-null component of the magnetization perpendicular to the film plane. Selected samples have been annealed in vacuum at temperatures of 300 and 350 °C for times between 20 and 120 min, under a static magnetic field of 100 Oe. DC hysteresis loops have been measured with an alternating gradient force magnetometer (AGFM) along the direction of the field applied during annealing and orthogonally to it. Samples with a thickness of 4 nm display lower coercive fields with respect to the 30 nm thick ones. Longer annealing times affect the development of a harder magnetic phase more oriented off the film plane. The field applied during annealing induces a moderate magnetic anisotropy only on 30 nm thick films.  相似文献   

2.
We present experimental results on the structural and magnetic properties of series of Fe thin films evaporated onto Si(1 1 1), Si(1 0 0) and glass substrates. The Fe thickness, t, ranges from 6 to110 nm. X-ray diffraction (XRD) and atomic force microscopy (AFM) have been used to study the structure and surface morphology of these films. The magnetic properties were investigated by means of the Brillouin light scattering (BLS) and magnetic force microscopy (MFM) techniques. The Fe films grow with (1 1 0) texture; as t increases, this (1 1 0) texture becomes weaker for Fe/Si, while for Fe/glass, the texture changes from (1 1 0) to (2 1 1). Grains are larger in Fe/Si than in Fe/glass. The effective magnetization, 4πMeff, inferred from BLS was found to be lower than the 4πMS bulk value. Stress induced anisotropy might be in part responsible for this difference. MFM images reveal stripe domain structure for the 110 nm thick Fe/Si(1 0 0) only.  相似文献   

3.
The thermal stability of written bits in a magnetic hard-disk medium has been investigated with a magnetic force microscope (MFM), which was equipped with an in situ heating system capable of heating the medium up to 300 °C. It is shown that both the annealing temperature and the duration have significant effect on the decay of the MFM signal. No signal decay is observed when annealing for 30 min up to temperatures of 200 °C. The MFM signal decays rapidly with increasing temperature, for temperatures over 200 °C. Repeated annealing at 280 °C with a duration below 10 min does not cause any signal decay.  相似文献   

4.
S.J. May 《Applied Surface Science》2006,252(10):3509-3513
Variable-temperature magnetic force microscopy (MFM) has been performed over the temperature range of 298-348 K on ferromagnetic (In,Mn)As thin films deposited by metal-organic vapor phase epitaxy (MOVPE). Ferromagnetic domains were observed with submicron resolution in both single and two phase (In,Mn)As films, persisting up to 328 K. Isolated cylindrical domains ranging from 100 to 350 nm in diameter with densities of 2-5 × 108 cm−2 were observed in phase pure films. Longer range magnetic order, in the form of ribbon-like domains up to 1 μm in length, are present in the regions between the cylindrical domains. Two phase (In,Mn)As films produced a well-resolved complex domain structure consisting of 180° parallel and antiparallel domains. Excellent agreement between the temperature dependence of the relative magnetization obtained by MFM and superconducting quantum interference device measurements was observed.  相似文献   

5.
Thin films with a low refractive index play an important role in optics, optoelectronics, and microelectronics. In this study, we present nanostructured porous SiO2 films fabricated by using a glancing angle deposition technique. These nanostructured porous SiO2 films deposited at an angle of 85° show very low refractive indices of 1.08 at 633 nm. As an application, a four-layer antireflection coating for visible wavelength is designed and fabricated using SiO2 material only. The normal incidence reflectance of the antireflection coating averaged between 400 and 800 nm is about 0.04%. The microstructure and the surface morphology are also investigated by using a scanning electron microscope.  相似文献   

6.
Tungsten nitride thin films were deposited on stainless steel-304 substrates by using a low energy (2 kJ) Mather type plasma focus device. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and microhardness are used to study the surface of treated samples. The XRD analysis shows that the degree of crystallinity of deposited thin films strongly depends on axial and angular positions of samples. The SEM micrographs of the deposited films at different angular positions (0°, 10° and 30°) and axial position of 8 cm show that the content of WN sub-micro crystalline structures on the surface of deposited films decreased with increasing the angle with respect to anode axis. From AFM results we observe that for the sample deposited at 8 cm and 0° axial and angular positions, respectively, the most uniform surface and the most homogenous distribution of grains are obtained. Also the hardness results show that the highest mechanical hardness is obtained when the film is deposited at 8 cm and 0° axial and angular positions, respectively.  相似文献   

7.
Surface structure, determined by scanning tunneling microscopy (STM), surface morphology, determined by atomic force microscopy (AFM), and surface composition, determined by X-ray photoelectron spectroscopy (XPS) of 20.0 nm Si0.8Ge0.2 quantum dots formed at 800 °C and encapsulated with 0-10 nm of Si at 500 °C and 800 °C are presented. It is observed that the quantum dot surface morphology changes during the Si encapsulation at 800 °C by the smoothing of the quantum dots. The height of the quantum dots decreases faster than can be accounted for from the amount of Si deposited, indicating that there is movement of material out of the quantum dots during the encapsulation process. Encapsulation at 500 °C results in a retention of the quantum dot surface morphology with increased Ge segregation compared to Si encapsulation at 800 °C. We conclude that the changing surface morphology at 800 °C is not the result of Ge segregation but due to intermixing resulting from the tensile strain of Si depositing on SiGe.  相似文献   

8.
Atomic force microscopy (AFM), X-ray magnetic circular dichroism (XMCD), magnetic force microscopy (MFM) and vibrating sample magnetometry (VSM) have been used to measure the magnetic and geometrical characteristics of triangular-shaped Co structures of lateral size 730 nm and thickness 32 nm, prepared by nanosphere lithography (NSL). Evidence of in-plane six-fold magnetic anisotropy induced by the symmetry of the structure has been found. By means of XMCD measurements, performed at remanence after applying a pulsed field, a structure rotation angle-dependent oscillation of about 15% with a periodicity of 60° has been observed for both the orbital and spin moments. Furthermore, the system exhibits the angular hysteresis effect. The magnetic measurements performed by MFM show a reduction of the magnetic configurations to only two states, one quasi-single domain Y state and second, a combination of vortex and Y state.  相似文献   

9.
BaTiO3 thin films were deposited on Pt/Ti/SiO2/Si by rf planar-magnetron sputtering. The films thickness increases with the decrease of both deposition pressure and sample-discharge centre distance. The films annealed at 900 °C, for 8 h, present direct band gap energy ranged between 3.57 and 3.59 eV. The dependence of the structure and microstructure (texture, degree of crystallinity), as well as of the optical characteristics on the deposition parameters, was analysed. Using spectroscopic ellipsometry (SE) measurements coupled with the Bruggeman Effective Medium Approximation (B-EMA), the layer structure and the surface roughness, were determined. The root mean square roughness values of the surface layer, estimated by atomic force microscopy (AFM) analyses, are ranged between 10 and 20 nm and were in good agreement with SE data.The obtained films have tetragonal unit cell and show densely packed, non-columnar morphology and hexagon-like crystallite shape.  相似文献   

10.
Fe-Pt thin films were deposited by rf sputtering on an MgO substrate heated at different temperatures to induce the formation of the perpendicular Fe-Pt L10 phase with a different grain morphology on the nanometer scale. All films are characterized by a mazelike pattern of FePt nanograins with interconnected bases. MFM images and magnetization curves indicate that all samples have a strong perpendicular magnetic anisotropy arising from (0 0 1) growth. The temperature behaviour of the electrical resistance indicates that a percolating path exists for conduction electrons in the mazelike pattern. The magnetoresistance was measured as a function of magnetic field (applied longitudinally) and temperature in the ranges −70 kOe<H<+70 kOe and 4 K<T<150 K, respectively. All samples display a complex behaviour of the electrical resistance as a function of applied field. The role of the different magnetoresistance effects (both intrinsic and extrinsic) measured in these FePt thin films is elucidated.  相似文献   

11.
The development of devices based on magnetic tunnel junctions has raised new interests on the structural and magnetic properties of the interface Co/MgO. In this context, we have grown ultrathin Co films (≤30 Å) by molecular-beam epitaxy on MgO(0 0 1) substrates kept at different temperatures (TS). Their structural and magnetic properties were correlated and discussed in the context of distinct magnetic anisotropies for Co phases reported in the literature. The sample characterization has been done by reflection high energy electron diffraction, magneto-optical Kerr effect and ferromagnetic resonance. The main focus of the work is on a sample deposited at TS=25 °C, as its particular way of growth has enabled a bct Co structure to settle on the substrate, where it is not normally obtained without specific seed layers. This sample presented the best crystallinity, softer magnetic properties and a four-fold in-plane magnetic anisotropy with Co〈1 1 0〉 easy directions. Concerning the samples prepared at TS=200 and 500° C, they show fcc and polycrystalline structures, respectively and more intricate magnetic anisotropy patterns.  相似文献   

12.
Microstructure, static magnetic properties and microwave permeability of sputtered FeCo films were examined. Fe60Co40 films (100 nm in thickness) deposited on glass substrates exhibited in-plane isotropy and a large coercivity of 161.1 Oe. When same thickness films were deposited on 2.5 nm Co underlayer, well-defined in-plane anisotropy was formed with an anisotropy field of 65 Oe. The sample had a static initial permeability of about 285, maximum imaginary permeability of 1255 and ferromagnetic resonance frequency of 2.71 GHz. Cross-sectional TEM image revealed that the Co underlayer had induced a columnar grain structure with grain diameter of 10 nm in the FeCo films. In comparison, FeCo films without Co underlayer showed larger grains of 70 nm in diameter with fewer distinct vertical grain boundaries. In addition, the Co underlayer changed the preferred orientation of the FeCo from (1 0 0) to (1 1 0). The improvement in soft magnetic properties and microwave behavior originates from the modification of the film microstructure, which can be well understood by the random anisotropy theory.  相似文献   

13.
NiTi shape memory alloy thin films are deposited on pure Cu substrate at substrate ambient temperatures of 300 °C and 450 °C. The surface and interface oxidation of NiTi thin films are characterized by X-ray photoelectron spectroscopy (XPS). After a subsequent annealing treatment the crystallization behavior of the films deposited on substrate at different temperatures is studied by X-ray diffraction (XRD). The effects of substrate temperature on the surface and interface oxidation of NiTi thin films are investigated. In the film surface this is an oxide layer composed of TiO2. The Ni atom has not been detected on surface. In the film/substrate interface there is an oxide layer with a mixture Ti2O3 and NiO in the films deposited at substrate temperatures 300 °C and 450 °C. In the films deposited at ambient temperature, the interface layer contains Ti suboxides (TiO) and metallic Ni.  相似文献   

14.
A specific technique of numerical treatment of atomic force microscopy (AFM) and magnetic force microscopy (MFM) signal has been developed to enhance the quality of raw images, in order both to improve their contrast and to gain better insight on the sample topography and on the local arrangement of the magnetisation vector. Basically, the technique consists in computing the optimum conformal transformation that allows one to superimpose two AFM images of the same area, acquired performing subsequent scans whose fast scan axis were mutually perpendicular, and applying the inverse transform to the second image. After MFM image superposition, the two datasets were either summed or subtracted, in order to improve the magnetic contrast. Computations have been done in a Matlab® workspace with the help of Image Processing Toolbox 4.2. Improved MFM images obtained on both dots and antidots thin evaporated Co arrays in the demagnetised state (after performing alternate field demagnetisation parallel and perpendicular to the array plane) have been interpreted. Samples consisting of large-size patterns (1×1 mm) of circular dots/antidots with square/hexagonal lattices and minimum diameters of 1 μm were prepared by optical lithography. The magnetic film thickness was chosen depending on resist thickness, and varied between 25 and 150 nm, with a fixed ratio 1:4 between metal/resist film thickness. MFM was exploited to obtain images of either intra-dot or inter-antidot magnetic structures.  相似文献   

15.
We have studied formation of Au-Ag alloy nanoparticles in sputtered SiO2 thin films. Silica thin films containing Au-Ag nanoparticles were deposited on quartz substrates using rf reactive magnetron co-sputtering technique. The films heat-treated in reducing Ar + H2 atmosphere at different temperatures. They were analyzed by using UV-vis spectrophotometry, atomic force microscopy and X-ray photoelectron spectroscopy (XPS) methods for their optical, surface morphological as well as structural and chemical properties. The optical absorption of the Au-Ag alloy nanoparticles illustrated one plasmon resonance absorption peak located at 450 nm between the absorption bands of pure Au and Ag nanoparticles at 400 and 520 nm, respectively, for the thin films annealed at 800 °C. XPS results showed that the alloys were in metallic state, and they had a greater tendency to lose electrons as compared to their corresponding monometallic state. Using lateral force microscopy analysis, we have found that the alloy particles were uniformly distributed on the surface with grain size of about 20 nm.  相似文献   

16.
The paper reports a feasibility study of new type bit-patterned-media using a nano-patterned glassy alloy template for ultra-high density hard disk applications. The prototype bit-patterned-media was prepared using a nano-hole array pattern fabricated on a Pd-based glassy alloy thin film and a Co/Pd multilayered film filled in the nano-holes. The prepared prototype bit-patterned-media had a smooth surface and isolated Co/Pd multilayer magnetic dots, where the average dot diameter, the average dot pitch and the average dot height were 30, 60 and 19 nm, respectively. MFM (magnetic force microscope) observation revealed that each dot was magnetized in a perpendicular direction and the magnetization could reverse when an opposite magnetic field was applied. Static read/write tester measurements showed that repeated writing and reading on isolated magnetic dots were possible in combination with conventional magnetic heads and high-accuracy positioning technologies. The present study indicates that the new type of bit-patterned-media composed of nano-hole arrays fabricated on glassy alloy film template and Co/Pd multilayer magnetic dots are promising for applications to next generation ultra-high density hard disk drives.  相似文献   

17.
The domain structure of a magnetostrictive Fe40Ni38Mo4B18 amorphous ribbon has been studied using magnetic force microscopy (MFM) at room temperature. First, the evolution of the magnetic domain patterns as a function of the annealing temperature has been investigated. In samples heat treated at 250 and 450 °C for 1 h, a transformation from 90° to 180° domain wall has been clearly observed, while the sample heat treated at 700 °C for 1 h showed a magnetic phase fixed by the crystalline anisotropy. Additionally, the evolution of the magnetic domain structure by applying a DC current was recorded by the MFM technique. For current annealed samples at 1 A for 1, 30 and 60 min, a transformation between different domain patterns has been observed. Finally, in samples treated by the current annealing method under simultaneous stress, an increase of the annealing time gives rise to a different magnetic structure arising from the development of transverse magnetic anisotropy.  相似文献   

18.
Thin films of eight metals with a thickness of 150 nm were deposited on mica substrates by thermal evaporation at various temperatures in a high vacuum. The surface morphology of the metal films was observed by atomic force microscopy (AFM) and the images were characterized quantitatively by a roughness analysis and a bearing analysis (surface height analysis). The films of Au, Ag, Cu, and Al with the high melting points were prepared at homologous temperatures T/Tm = 0.22-0.32, 0.40, and 0.56. The films of In, Sn, Bi, and Pb with the low melting points were prepared at T/Tm = 0.55-0.70, where T and Tm are the absolute temperatures of the mica substrate and the melting point of the metal, respectively. The surface morphology of these metal films was studied based on a structure zone model. The film surfaces of Au, Ag, and Cu prepared at the low temperatures (T/Tm = 0.22-0.24) consist of small round grains with diameters of 30-60 nm and heights of 2-7 nm. The surface heights of these metal films distribute randomly around the surface height at 0 nm and the morphology is caused by self-shadowing during the deposition. The grain size becomes large due to surface diffusion of adatoms and the film surfaces have individual characteristic morphology and roughnesses as T increases. The surface of the Al film becomes very smooth as T increases and the atomically smooth surface is obtained at T/Tm = 0.56-0.67 (250-350 °C). On the other hand, the atomically smooth surface of the Au film is obtained at T/Tm = 0.56 (473 ± 3 °C). The films of In, Sn, Bi, and Pb prepared at T/Tm = 0.55-0.70 also show the individual characteristic surface morphology.  相似文献   

19.
Magnetic force microscopy (MFM) methods were applied to investigate the peculiarities of magnetization distribution in elliptical 400×600×27 nm Co particles. Reversible transitions between the uniform and vortex states under inhomogeneous magnetic field of MFM probe were observed. Possibility to control the chirality of a magnetic vortex in these particles by MFM probe manipulation was shown.  相似文献   

20.
Residual stress can adversely affect the mechanical, electronic, optical and magnetic properties of thin films. This work describes a simple stress measurement instrument based on the bending beam method together with a sensitive non-contact fibre optical displacement sensor. The fibre optical displacement sensor is interfaced to a computer and a Labview programme enables film stress to be determined from changes in the radius of curvature of the film-substrate system. The stress measurement instrument was tested for two different kinds of thin film, hard amorphous carbon nitride (CN) and soft copper (Cu) films on silicon substrates deposited by RF magnetron sputtering. Residual stress developed in 500 nm thick CN thin films deposited at substrate temperatures in the range 50-550 °C was examined and it was found that stress in CN films decreased from 0.83 to 0.44 GPa compressive with increase of substrate temperature. Residual stress was found to be tensile (121 MPa) for Cu films of thickness 1500 nm deposited at room temperature.  相似文献   

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